CN209227101U - The manufacturing equipment of two-layer epitaxial piece - Google Patents
The manufacturing equipment of two-layer epitaxial piece Download PDFInfo
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- CN209227101U CN209227101U CN201821995486.7U CN201821995486U CN209227101U CN 209227101 U CN209227101 U CN 209227101U CN 201821995486 U CN201821995486 U CN 201821995486U CN 209227101 U CN209227101 U CN 209227101U
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Abstract
The utility model discloses a kind of manufacturing equipments of two-layer epitaxial piece, it include: the first doping gas source pipe and the second doping gas source pipe, first doping gas source pipe is used for doping gas source conveying when buffer growth, doping gas source conveying when second doping gas source pipe is grown for Withstand voltage layer, the first doping gas source pipe and the second doping gas source pipe are independently arranged.The wide problem of the Withstand voltage layer transition region of the utility model research two-layer epitaxial piece, the reason is that after the completion of buffer growth, this layer can be still remained in the gas piping of epitaxy machine platform grows the high-concentration dopant gas used, such as phosphine, borine, transition region so as to cause the Withstand voltage layer grown in low concentration is wide, the utility model uses independent doping gas source conveyance conduit respectively in buffer growth and when Withstand voltage layer is grown, can solve this problem.
Description
Technical field
The utility model relates to a kind of manufacturing equipments of two-layer epitaxial piece.
Background technique
Epitaxial wafer is essential in one of technique in chip manufacturing, especially power device manufacturing process.With
Demand of the market to power device low-power consumption, high voltage is more and more vigorous, and the silicon substrate resistivity that epitaxy technique uses has more next
Lower trend, due to solid solubility, low resistance substrate rate is generally realized by overweight p-doped or boron.However overweight p-doped
Or boron substrate use again bring series of process challenge, such as it is overweight mix substrate itself in extension elevated temperature processes from
Doping and substrate and the lattice mismatch of extension etc..Auto-dope can be managed by reasonable selection epitaxial temperature appropriate, and brilliant
Lattice mismatch can be by first growing the epitaxial layer of one layer of low-resistivity as buffer layer on substrate, then the growth power on the layer
The Withstand voltage layer that device needs solves, that is, uses two-layer epitaxial piece.But two-layer epitaxial piece is in the second layer extension, also of growth
It is that wide (epitaxial layer can be divided into flat region and transition region, and the calculation method of transition region is marked referring to SEMI for the transition region of Withstand voltage layer
It is quasi-), curve is shown as at 8-10 microns of depth compared with " collapsing ", as shown in Figure 1, appended drawing reference 11 is the flat of the Withstand voltage layer of requirement on devices
Smooth area, appended drawing reference 12 are the transition region of the Withstand voltage layer of requirement on devices, and appended drawing reference 13 is first layer extension, namely buffers
Layer, appended drawing reference 14 are the overweight substrate mixed.It will be seen from figure 1 that original method, i.e. the single doping pipeline of standard configuration,
Pipeline purges width of the transition region 15 compared with appended drawing reference 12 of the Withstand voltage layer of 45s preparation, that is, flat region after buffer layer deposition
I.e. effective epitaxial thickness reduces.The transition region of Withstand voltage layer is wide also this means that effective epitaxial thickness of this layer reduces, and does not meet function
The breakdown voltage requirement of rate requirement on devices.The application sets about from the equipment of manufacture epitaxial wafer, solves the problems, such as this.
Utility model content
The utility model is in order to solve the above technical problems, provide a kind of manufacturing equipment of two-layer epitaxial piece.
In order to achieve the above object, the utility model is achieved through the following technical solutions:
A kind of manufacturing equipment of two-layer epitaxial piece, comprising: the first doping gas source pipe and the second doping gas source pipe, first
Doping gas source conveying when gas source pipe is used for buffer growth is adulterated, when the second doping gas source pipe is grown for Withstand voltage layer
Gas source conveying is adulterated, the first doping gas source pipe and the second doping gas source pipe are independently arranged.
An embodiment according to the present utility model, further includes: dilution gas source pipe, mixed pipe line, main Hydrogen Line,
Independent pipeline, growth chamber, the first exhaust gas channel, the second exhaust gas channel and the first control valve, wherein the first doping gas source pipe
Road, the second doping gas source pipe and dilution gas source pipe are connected with mixed pipe line respectively, independent pipeline, mixed pipe line and main hydrogen
Air pipe is connected to growth chamber, and for growth chamber for carrying out the growth of buffer layer and the growth of Withstand voltage layer, the first tail gas is logical
The entrance in road is set between independent pipeline, mixed pipe line and growth chamber, and the entrance and growth chamber of the second exhaust gas channel connect
Logical, the outlet of the first exhaust gas channel and the outlet of the second exhaust gas channel access board tail gas treatment device, and the first control valve is set
It is placed in the inlet of the first exhaust gas channel.
An embodiment according to the present utility model further includes the first mass flow control meter, the second mass flow control
System meter, third mass flow control meter, the 4th mass flow control meter, the 5th mass flow control meter, the first doping gas source pipe
Gas flow in road controls meter control by the first mass flow, dilutes the gas flow in gas source pipe by the second mass flow
Control meter controls, and the gas flow flowed through in mixed pipe line controls meter control, the second doping gas source pipe by third mass flow
In gas flow meter control is controlled by the 4th mass flow, main Hydrogen Line gas flow controls by the 5th mass flowmenter.
Equipment for gasification, output is arranged in an embodiment according to the present utility model, the input terminal of the independent pipeline
End is connected to growth chamber, and the gas flow in independent pipeline controls meter control by the 6th mass flow.
An embodiment according to the present utility model, further includes the second control valve, and the second control valve is set to the second tail
The inlet or exit in gas channel.
The wide problem of the Withstand voltage layer transition region of the utility model research two-layer epitaxial piece, the reason is that buffer growth is completed
Afterwards, this layer can be still remained in the gas piping of epitaxy machine platform grows the high-concentration dopant gas used, such as phosphine, borine, from
And cause low concentration grow Withstand voltage layer transition region it is wide, the utility model standard configuration single adulterate pipeline except,
Independent doping gas source delivery pipe is used respectively when a newly-increased independent doping pipeline, i.e. buffer growth and when Withstand voltage layer is grown
Road can solve this problem.
Detailed description of the invention
Fig. 1 is the distribution map of resistivity described in background technique；
Fig. 2 is the structure chart of two-layer epitaxial piece；
Fig. 3 is the equipment schematic diagram of embodiment 1；
Fig. 4 is the resistivity using two-layer epitaxial piece obtained by the utility model.
Specific embodiment
The utility model is described in detail with reference to the accompanying drawing:
Embodiment 1
The present embodiment two-layer epitaxial piece to be prepared is as shown in Fig. 2, grown buffer layer 11 on substrate 10, on buffer layer 11
Withstand voltage layer 12 is grown, the substrate 10 be the substrate that common epitaxial growth uses, for overweight doping, specifically: for p-doped,
The resistivity of substrate 10 is 0.0007 ohmcm~0.0013 ohmcm；For boron-doping, the resistivity of substrate 10 is
0.0005 ohmcm~0.001 ohmcm.Other are not particularly limited.
The equipment for preparing two-layer epitaxial piece is as shown in Figure 3, comprising: the first doping gas source pipe 1, the control of the first mass flow
Meter 2, dilution gas source pipe 3, the second mass flow control meter 4, mixed pipe line 5, third mass flow control the 6, second doping of meter
Gas source pipe 8, the 4th mass flow control meter 9, growth chamber 7, main Hydrogen Line 16, the 5th mass flow control meter 17, the
One control valve 18, independent pipeline 19, the first exhaust gas channel 20, the second exhaust gas channel 21 and the second control valve 22.Wherein, first mixes
Miscellaneous gas source pipe 1, second adulterates gas source pipe 8 and dilution gas source pipe 3 is connected with mixed pipe line 5 respectively, the first doping gas
Doping gas source when source capsule road 1 is grown for buffer layer 11 conveys, and the gas flow in the first doping gas source pipe 1 is by the first matter
It measures flow control meter 2 to control, dilutes the gas flow in gas source pipe 3 by 4 control of the second mass flow control meter, mixed pipe line
5 are connected to growth chamber 7, and growth chamber 7 is used to carry out the growth of buffer layer 11 and Withstand voltage layer 12, flow through in mixed pipe line 5
Doping gas of the gas flow by 6 control of third mass flow control meter, when the second doping gas source pipe 8 is grown for Withstand voltage layer 12
Source conveying, the second gas flow adulterated in gas source pipe 8 are controlled by the 4th mass flow control meter 9.Main hydrogen pipeline 16 is
Gas is arranged by 17 control of the 5th mass flow control meter, the input terminal of independent pipeline 19 in the transfer pipeline of main hydrogen, gas flow
Change equipment 23, output end are connected to growth chamber 7, and independent pipeline 19 is passed through the equal of growth chamber 7 for inputting one hydrogen silicon of trichlorine
For gaseous one hydrogen silicon of trichlorine, the one hydrogen silicon of trichlorine of liquid is by being set to the one hydrogen silicon source of supply 24 of trichlorine of 19 entrance of independent pipeline
Enter independent pipeline 19 after the gasification of equipment for gasification 23, the gas flow in independent pipeline 19 is controlled by the 6th mass flow to be counted
28 controls.The entrance of first exhaust gas channel 20 be set to mixed pipe line 5 and independent pipeline 19 intersection and growth chamber 7 it
Between, the entrance of the second exhaust gas channel 21 is connected to growth chamber 7, outlet and the second exhaust gas channel 21 of the first exhaust gas channel 20
Outlet accesses board tail gas treatment device, and the second exhaust gas channel 21 is respectively arranged at growth chamber 7 with main hydrogen pipeline 16
Opposite side, than as shown in Fig. 2, main hydrogen pipeline 16 is set to the left side of growth chamber 7, the second exhaust gas channel 21 is set to growth
The right side of cavity 7.First control valve 18 is set to the inlet of the first exhaust gas channel 20, and the first control valve 18 controls mixed pipe line
5 and independent pipeline 19 in gas lead to the first exhaust gas channel 20 or lead to growth chamber 7, the first control valve 18 can be one
Kind three-way magnetic valve, the second control valve 22 are set to the inlet or exit of the second exhaust gas channel 21, and the second control valve 22 is
Normally opened, i.e., when being always have gas to circulate namely production technology in growth chamber 7, the second exhaust gas channel 21 is normal open.
It is usually to carry out use when pressure maintaining is leaked hunting to growth chamber 7 that second control valve 22, which is closed,.First doping gas source pipe 1 enters
Mouth setting doping gas source source of supply 25, the entrance setting of the second doping gas source pipe 8 adulterate gas source source of supply 25, dilute gas source pipe
Dilution hydrogen supply source 26 is arranged in the entrance in road 3, and dilution hydrogen supply source can be hydrogen generator station, main 16 entrance of hydrogen pipeline
Main hydrogen supply source 27 is set, and main hydrogen supply source can be hydrogen generator station.
The present embodiment use two-layer epitaxial piece manufacturing equipment, method the following steps are included:
Step 1: Fig. 2 show the structure chart current embodiment require that the two-layer epitaxial piece prepared, substrate 10 is placed in growth
Cavity 7 toasts substrate 10, is passed through main hydrogen to growth chamber 7, keeps growth chamber 7 clean, preparation doping injection gas
Body is passed through phosphine or borine from the first doping gas source pipe 1, and preheating the first doping gas source pipe 1 is logical from dilution gas source pipe 3
Enter dilution hydrogen, phosphine or borine enter mixed pipe line 5 and form doping injection gas after being mixed with dilution with hydrogen, preheating is mixed
Pipeline 5 is closed, one hydrogen silicon of trichlorine is prepared, one hydrogen silicon of trichlorine is passed through from independent pipeline 19, independent pipeline 19 is preheated, so that one hydrogen of trichlorine
The stability of flow of silicon controls the first control valve 18, so that doping injects gas and one hydrogen silicon of trichlorine from 20 row of the first exhaust gas channel
Out；
Step 2: the grown buffer layer 11 on substrate 10,0.05 ohmcm of resistivity, growth use one hydrogen silicon of trichlorine
The method of vapor deposition is reacted using main hydrogen and one hydrogen silicon of trichlorine, is doped using doping injection gas；
Specifically: one hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7；From main hydrogen pipeline 16 to growth chamber
7 are passed through hydrogen；Phosphine or borine are passed through from the first doping gas source pipe 1；Meanwhile dilution hydrogen is passed through from dilution gas source pipe 3
Gas, phosphine or borine enter mixed pipe line 5 and form doping injection gas after being mixed with dilution with hydrogen, control the first control valve
18, so that doping injection gas and one hydrogen silicon of trichlorine enter growth chamber 7 and participate in reaction, main hydrogen and one hydrogen silicon of trichlorine for giving birth to
Long monocrystalline silicon, doping injection gas are that buffer layer 11 adulterates have resistivity；
Step 3: purging purges mixed pipe line 5 using doping injection gas, in advance using main hydrogen purge growth chamber 7
Heat second adulterates gas source pipe 8 and mixed pipe line 5；One hydrogen silicon of trichlorine is prepared simultaneously, so that the stability of flow of one hydrogen silicon of trichlorine；
Specifically: purging growth chamber 7 and mixed gas pipeline 5, purging growth chamber 7 use main hydrogen, purging mixing
Gas piping 5 uses the mixed gas of hydrogen and phosphine or borine, i.e. doping injection gas；It is specific: main hydrogen pipeline 16 to
Growth chamber 7 is passed through main hydrogen；It is passed through one hydrogen silicon of trichlorine from independent pipeline 19, main hydrogen is discharged from the second exhaust gas channel 21, phosphorus
Alkane or borine adulterate gas source pipe 8 from second and are passed through mixed pipe line 5, and dilution hydrogen is passed through mixing tube from dilution gas source pipe 3
Road 5, phosphine or borine and dilution are mixed into doping injection gas with hydrogen in mixed pipe line 5, which injects gas purging
Mixed pipe line 5, controls the first control valve 18, and doping injects gas and one hydrogen silicon of trichlorine before leading to growth chamber 7 from first
Exhaust gas channel 20 is discharged；It is to make stability of flow that this step, which leads to the purpose of one hydrogen silicon of trichlorine, phosphine or borine and dilution hydrogen, is guaranteed
The growth of the Withstand voltage layer 12 of next step.
Step 4: growing Withstand voltage layer 12 on buffer layer 11,3.1 ohmcm of resistivity, growth uses one hydrogen of trichlorine
The method of silicon vapor deposition, is reacted using main hydrogen and one hydrogen silicon of trichlorine, is doped using doping injection gas；
Specifically: one hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7；Meanwhile from main hydrogen pipeline 16 to life
Long cavity 7 is passed through hydrogen；It is passed through phosphine or borine from the second doping gas source pipe 8 simultaneously, dilution gas source pipe 3 is passed through dilution and uses
Hydrogen, phosphine or borine and dilution are entered in mixed pipe line 5 with hydrogen is mixed into doping injection gas, controls the first control valve
18, so that doping injection gas and one hydrogen silicon of trichlorine enter growth chamber 7 and participate in reaction, main hydrogen and one hydrogen silicon of trichlorine for giving birth to
Long monocrystalline silicon；
Step 5: purging, is passed through main hydrogen purge growth chamber 7 from main hydrogen pipeline 16, main hydrogen is logical from the second tail gas
Road 21 is discharged, without being passed through phosphine or borine, doping injection gas, one hydrogen silicon of trichlorine or dilution hydrogen.
More specifically application " two-layer epitaxial piece is detailed in using the method and step that the present embodiment equipment prepares two-layer epitaxial piece
Preparation method, equipment and two-layer epitaxial piece " one text.
The two-layer epitaxial piece prepared using the utility model, it is wide come the transition region for monitoring Withstand voltage layer using extension extension probe
Degree, as shown in figure 4, independent doping gas source conveyance conduit is used when buffer layer 11 is grown and when Withstand voltage layer 12 is grown respectively,
The extension spreading resistance depth distribution of buffer layer 11 and Withstand voltage layer 12 is coincide with device design requirement, solves single doping gas source
The problem of pipeline width of transition zone is wide, " collapsing ".
The embodiments of the present invention are only used for being illustrated the utility model, do not constitute to scope of the claims
Limitation, other substantially equivalent substitutions that those skilled in that art are contemplated that, in scope of protection of the utility model
It is interior.
Claims (5)
1. a kind of manufacturing equipment of two-layer epitaxial piece characterized by comprising the first doping gas source pipe and the second doping gas source
Pipeline, the first doping gas source pipe are used for doping gas source conveying when buffer growth, and the second doping gas source pipe is for pressure resistance
Doping gas source conveying when layer growth, the first doping gas source pipe and the second doping gas source pipe are independently arranged.
2. the manufacturing equipment of two-layer epitaxial piece according to claim 1, which is characterized in that further include: dilution gas source pipe,
Mixed pipe line, main Hydrogen Line, independent pipeline, growth chamber, the first exhaust gas channel, the second exhaust gas channel and the first control valve,
Wherein, the first doping gas source pipe, the second doping gas source pipe and dilution gas source pipe are connected with mixed pipe line respectively, independent
Pipeline, mixed pipe line and main hydrogen pipeline are connected to growth chamber, and growth chamber is used to carry out the growth and pressure resistance of buffer layer
The growth of layer, the entrance of the first exhaust gas channel are set between independent pipeline, mixed pipe line and growth chamber, the second exhaust gas channel
Entrance be connected to growth chamber, the outlet and the outlet of the second exhaust gas channel of the first exhaust gas channel access board vent gas treatment
Equipment, the first control valve are set to the inlet of the first exhaust gas channel.
3. the manufacturing equipment of two-layer epitaxial piece according to claim 1 or 2, which is characterized in that further include the first quality stream
Amount control meter, the second mass flow control meter, third mass flow control meter, the 4th mass flow control meter, the 5th quality stream
Amount control meter, the first gas flow adulterated in gas source pipe control meter control by the first mass flow, dilute in gas source pipe
Gas flow meter control is controlled by the second mass flow, the gas flow flowed through in mixed pipe line is controlled by third mass flow
Meter control, the second gas flow adulterated in gas source pipe control meter control, main Hydrogen Line gas stream by the 4th mass flow
Amount is controlled by the 5th mass flowmenter.
4. the manufacturing equipment of two-layer epitaxial piece according to claim 3, which is characterized in that the input of the independent pipeline
End setting equipment for gasification, output end are connected to growth chamber, and the gas flow in independent pipeline is controlled by the 6th mass flow and counted
Control.
5. the manufacturing equipment of two-layer epitaxial piece according to claim 1, which is characterized in that it further include the second control valve, the
Two control valves are set to the inlet or exit of the second exhaust gas channel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821995486.7U CN209227101U (en) | 2018-11-30 | 2018-11-30 | The manufacturing equipment of two-layer epitaxial piece |
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| CN201821995486.7U CN209227101U (en) | 2018-11-30 | 2018-11-30 | The manufacturing equipment of two-layer epitaxial piece |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509702A (en) * | 2018-11-30 | 2019-03-22 | 上海晶盟硅材料有限公司 | Preparation method, equipment and the two-layer epitaxial piece of two-layer epitaxial piece |
| CN117587507A (en) * | 2024-01-19 | 2024-02-23 | 宁波合盛新材料有限公司 | Method and device for improving doping uniformity of silicon carbide epitaxial wafer |
-
2018
- 2018-11-30 CN CN201821995486.7U patent/CN209227101U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509702A (en) * | 2018-11-30 | 2019-03-22 | 上海晶盟硅材料有限公司 | Preparation method, equipment and the two-layer epitaxial piece of two-layer epitaxial piece |
| CN109509702B (en) * | 2018-11-30 | 2024-05-28 | 上海晶盟硅材料有限公司 | Preparation method and equipment of double-layer epitaxial wafer and double-layer epitaxial wafer |
| CN117587507A (en) * | 2024-01-19 | 2024-02-23 | 宁波合盛新材料有限公司 | Method and device for improving doping uniformity of silicon carbide epitaxial wafer |
| CN117587507B (en) * | 2024-01-19 | 2024-04-05 | 宁波合盛新材料有限公司 | Method and device for improving doping uniformity of silicon carbide epitaxial wafer |
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