CN218666407U - Air inlet system for supplying multiple reaction chambers by same air source - Google Patents
Air inlet system for supplying multiple reaction chambers by same air source Download PDFInfo
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- CN218666407U CN218666407U CN202223224608.1U CN202223224608U CN218666407U CN 218666407 U CN218666407 U CN 218666407U CN 202223224608 U CN202223224608 U CN 202223224608U CN 218666407 U CN218666407 U CN 218666407U
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Abstract
The utility model discloses a gas intake system for a plurality of reacting chambers of same air supply, including reaction air supply, keep apart the air supply, mix air supply and reacting chamber, set up the air supply main valve of the whole switch of control on the main road of each air supply, set up shutoff valve and mass flowmeter on the branch road of each air supply respectively, through the switching of the corresponding branch road of shutoff valve regulation, mass flowmeter adjusts the flow of each branch road, and then realizes adjusting the switching of different air supply branch roads and sets for the flow and make gaseous mixing according to a certain proportion, satisfy the growth of wafer under the multiple different technology demands. In addition, the tail ends of the branches of the gas sources are independently connected with the reaction chambers or are connected with the reaction chambers after being mixed, so that the gas inlet method can be suitable for two reaction chambers, namely, the reaction gas sources are independently controlled to be introduced into the gas inlet chamber and the reaction gas sources are premixed in the pipeline and then enter the gas inlet chamber.
Description
Technical Field
The utility model relates to a vapor phase epitaxy growth equipment technical field especially relates to an air intake system that is used for a plurality of reacting chambers of same air supply.
Background
The vertical film forming equipment carries out semiconductor epitaxy according to chemical vapor deposition, the interior of the reaction cavity is in a normal pressure or negative pressure state, reaction gas is guided by the gas inlet chamber and is introduced into the cavity from top to bottom, and the gas and the wafer need to reach the reaction temperature and contact with the wafer to start epitaxial growth.
The multiple reaction chambers are prepared simultaneously, so that the production efficiency can be obviously improved, however, in practical use, one transfer device is matched with the multiple reaction chambers to work cooperatively, supplied gas is selected according to the preparation process requirement, and the gas flow of each pipeline can be controlled and uniformly enters the flow channel after being rectified by the gas inlet chamber. In a semiconductor wafer manufacturing process, an impurity element is doped through a gas phase to make a wafer have a desired conductivity type and a certain resistivity; the main doping agents doped with silicon carbide are nitrogen, aluminum, boron and vanadium, a doping source and carrier gas are usually mixed in a gas source cabinet in the prior art, the mixed gas is uniformly introduced into a reaction chamber, the opening and closing of different gas source branches cannot be independently adjusted, the mixing proportion of the gas cannot meet the requirements, and therefore the growth of wafers under various different process requirements cannot be met.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an air inlet system for supplying a plurality of reaction chambers with the same air source, which solves the problems existing in the prior art, controls the whole opening and closing of the same air source by an air source main valve, and divides the same air source into a plurality of branches to be connected with different reaction chambers to realize the simultaneous supply; and each branch is provided with an independent branch shut-off valve and a mass flow meter respectively, and the opening and closing of different gas source branches are adjusted and the flow is set so that the gases are mixed according to a certain proportion, thereby meeting the growth of wafers under various different process requirements.
In order to achieve the above object, the utility model provides a following scheme: the utility model provides an air intake system for a plurality of reaction chambers of same air supply, include
The main path of the reaction gas source is provided with a reaction gas source main valve which is used for controlling the whole opening and closing of the reaction gas source, the tail end of the main path of the reaction gas source is divided into a plurality of branches, each branch is provided with a shutoff valve and a mass flow meter, and the plurality of branches are respectively connected with different reaction chambers for simultaneous supply; the tail ends of the branches of the reaction gas sources are mutually independent or are communicated through pipelines and then are connected with different reaction chambers; and
the main path of the isolated gas source is provided with an isolated gas source main valve which is used for controlling the whole opening and closing of the isolated gas source, the tail end of the main path of the isolated gas source is divided into a plurality of branches, each branch is provided with a shutoff valve and a mass flow meter, and the plurality of branches are respectively connected with different reaction chambers for simultaneous supply; and
the main path of the doping gas source is provided with a doping gas source main valve which is used for controlling the whole opening and closing of the doping gas source, the tail end of the main path of the doping gas source is divided into a plurality of branches, each branch is provided with a shutoff valve and a mass flow meter, and the plurality of branches are respectively connected with different reaction chambers for simultaneous supply; and
the reaction chamber comprises an air inlet chamber and a base, the top of the reaction chamber is communicated with the air inlet chamber, the base is rotatably arranged in the reaction chamber, and a wafer is placed on a substrate on the base; the branch ends of the reaction gas source, the isolation gas source and the doped gas source are connected with the gas inlet chamber.
In one embodiment, a mixing gas inlet valve is arranged on one side of each branch of the reaction gas source, the isolation gas source and the doping gas source, which is close to the reaction chamber.
In one embodiment, the reaction gas source comprises a carbon source and a silicon source; and an air inlet filter is arranged on the main path of the carbon source at the front gas inlet section.
In one embodiment, the isolated gas source comprises a hydrogen source, and a gas inlet filter is arranged on a main path of the hydrogen source at the gas inlet front section; and a pressure gauge is arranged on the main path of the hydrogen source close to the gas source side.
In one embodiment, the doping gas source comprises a TMA gas source or a nitrogen gas source, and the main paths of the TMA gas source and the nitrogen gas source are provided with gas inlet filters at the gas inlet front section.
In one embodiment, the gas inlet mode of the gas inlet chamber is that a reaction gas source is independently controlled to be introduced, the branch ends of the carbon source and the silicon source are respectively connected with a carbon source connector and a silicon source connector on the reaction chamber, and the nozzle end of the gas inlet chamber is also introduced with the isolation gas source.
In one embodiment, the gas inlet chamber is fed with a reaction gas source after being premixed in a pipeline, the branch ends of the carbon source and the silicon source are communicated through the pipeline and then connected with a reaction gas source interface on the gas inlet chamber, and the gas inlet chamber is further communicated with the doping gas source and the isolation gas source.
In one embodiment, the device further comprises a flow pressure control mechanism, wherein the flow pressure control mechanism comprises an exhaust pipeline and a tail gas treatment device, the bottom of the reaction chamber is communicated with the exhaust pipeline, an exhaust valve is installed on the exhaust pipeline, and the tail end of the exhaust pipeline is connected with the tail gas treatment device; a pipeline pressure gauge, a proportional valve and a vacuum pump are sequentially arranged on the exhaust pipeline from the exhaust valve to the tail gas treatment device; the exhaust valve is in a normally open state, the pipeline pressure gauge is used for monitoring the pressure inside the cavity of the reaction chamber, and the opening degree of the proportional valve is adjusted in real time according to the numerical value measured by the pipeline pressure gauge.
The utility model discloses following beneficial technological effect has been gained for prior art:
the utility model provides a gas intake system that is used for a plurality of reacting chambers of same air supply, including the reaction air supply, keep apart the air supply, mix air supply and reacting chamber, set up the air supply main valve of the whole switch of control on the main road of each air supply, set up shutoff valve and mass flowmeter on the branch road of each air supply respectively, through the switching of the corresponding branch road of shutoff valve regulation, mass flowmeter adjusts the flow in each branch road, and then realizes adjusting the switching of different air supply branch roads and sets for the flow and make gaseous mixing according to a certain proportion, satisfy the growth of wafer under the multiple different technology demands. In addition, the tail ends of the branches of the gas sources are independently connected with the reaction chambers or are connected with the reaction chambers after being mixed, so that the gas inlet method can be suitable for two reaction chambers, namely, the reaction gas sources are independently controlled to be introduced into the gas inlet chamber and the reaction gas sources are premixed in the pipeline and then enter the gas inlet chamber.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a plurality of reaction chambers sharing a common gas inlet system;
FIG. 2 is a schematic sectional view of a layered inlet structure of reaction gas in a reaction chamber;
FIG. 3 is a schematic sectional view of a reaction gas mixing and feeding structure of the reaction chamber;
FIG. 4 is a schematic diagram of a system for transporting liquid TMA out of a reservoir with a carrier gas in a front stage;
wherein, 1, a gas source main valve; 2, closing the valve; 3, a mass flow meter; 4, an air inlet filter; 5, a pressure gauge; 6 a hybrid intake valve; 7, a first reaction chamber; 8, a second reaction chamber; 9 an exhaust valve; 10 pipe pressure gauges; 11 a proportional valve; 12 a vacuum pump; 13 a tail gas treatment device; 14 an air inlet chamber; 15 a reaction chamber; 16 a substrate; 17 a base; 18 a rotation mechanism; 19 a carrier gas inlet line; 20 a mixed gas outlet pipeline; 21 the container is stored.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The utility model aims at providing an air inlet system for supplying a plurality of reaction chambers with the same air source, which solves the problems existing in the prior art, controls the whole opening and closing of the same air source by an air source main valve, and divides the same air source into a plurality of branches to be connected with different reaction chambers to realize the simultaneous supply; and each branch is provided with an independent branch shut-off valve and a mass flow meter respectively, and the opening and closing of different gas source branches are adjusted and the flow is set so that the gases are mixed according to a certain proportion, thereby meeting the growth of wafers under various different process requirements.
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
As shown in FIGS. 1-4, the present invention provides a gas inlet system for supplying a plurality of reaction chambers with the same gas source, which comprises
The main path of the reaction gas source is provided with a reaction gas source main valve which is used for controlling the whole opening and closing of the reaction gas source, the tail end of the main path of the reaction gas source is divided into a plurality of branches, each branch is provided with a shut-off valve 2 and a mass flow meter 3, and the plurality of branches are respectively connected with different reaction chambers 15 for simultaneous supply; the tail ends of the branches of the multiple reaction gas sources are mutually independent or are communicated through pipelines and then are connected with different reaction chambers 15; and
the main path of the isolated gas source is provided with an isolated gas source main valve which is used for controlling the whole opening and closing of the isolated gas source, the tail end of the main path of the isolated gas source is divided into a plurality of branches, each branch is provided with a shut-off valve 2 and a mass flow meter 3, and the plurality of branches are respectively connected with different reaction chambers 15 for simultaneous supply; and
the main path of the doping gas source is provided with a doping gas source main valve which is used for controlling the whole opening and closing of the doping gas source, the tail end of the main path of the doping gas source is divided into a plurality of branches, each branch is provided with a shut-off valve 2 and a mass flow meter 3, and the plurality of branches are respectively connected with different reaction chambers 15 for simultaneous supply; and
the reaction chamber 15 comprises an air inlet chamber 14 and a pedestal 17, the top of the reaction chamber 15 is communicated with the air inlet chamber 14, the pedestal 17 is rotatably mounted in the reaction chamber 15, specifically, a rotating mechanism 18 can be adopted, as shown in fig. 2 and 3, the rotating mechanism 18 is arranged at the bottom of the reaction chamber 15, the rotating shaft is driven by a motor to rotate so as to realize the rotation of the rotating mechanism 18, and the wafer is placed on a substrate 16 on the pedestal 17; the branch ends of the reaction gas source, the isolation gas source and the doped gas source are connected with the gas inlet chamber 14; the gas is guided by the gas inlet chamber 14 and then vertically downward to contact with the wafer supported by the substrate 16, and the wafer is driven by the rotating mechanism 18 to rotate at a high speed along with the susceptor 17.
In one embodiment, the combined gas inlet system is suitable for epitaxial growth process of reaction chambers 15 with different structures of gas inlet chambers 14, and the pipeline connection mode of the connected gas inlet system is adjusted and adapted based on different chamber structures and wafer growth requirements. And a mixed gas inlet valve 6 is arranged on one side of each branch of the reaction gas source, the isolation gas source and the doping gas source, which is close to the reaction chamber, and the mixed gas inlet valve 6 is used for rapidly stopping gas from entering the reaction chamber 15 when the process jumps and switches.
In one embodiment, the reaction gas source comprises a carbon source and a silicon source; an air inlet filter 4 is arranged on the main path of the carbon source at the front section of the air inlet. The isolated gas source comprises a hydrogen source, and an air inlet filter 4 is arranged on the main path of the hydrogen source at the front gas inlet section; the main path of the hydrogen source is provided with a pressure gauge 5 close to the gas source side. The doping gas source comprises a TMA gas source or a nitrogen source, and gas inlet filters 4 are arranged on the main paths of the TMA gas source and the nitrogen source at the gas inlet front section. A pressure gauge 5 is arranged at the end part of the isolated gas source to monitor the pressure of the gas source in real time so as to avoid the condition of insufficient gas supply in the film forming process; and a filter is arranged at the gas inlet end of other process gases except the silicon source to remove the mixed other gases, so that the gas inlet purity is improved.
In one embodiment, the gas inlet mode of the gas inlet chamber 14 is controlled by introducing a reaction gas source independently, the branch ends of the carbon source and the silicon source are respectively connected with a carbon source connector and a silicon source connector on the reaction chamber 14, and an isolation gas source is introduced into the nozzle end of the gas inlet chamber 14. As shown in fig. 2, the gas inlet structure inside the first reaction chamber 7 is two independent gas inlets of a carbon source and a silicon source, and an isolation gas (e.g., hydrogen) is introduced into the end of the nozzle to prevent the reaction gas from mixing and heating in the gas inlet chamber, and the hydrogen is used as a carrier gas to mix with other gases in the gas inlet pipeline to promote the gas flow in the pipeline.
In one embodiment, the gas inlet chamber 14 is formed by pre-mixing a reaction gas source in a pipeline and then introducing the reaction gas source, the branch ends of the carbon source and the silicon source are communicated through a pipeline and then connected to a reaction gas source interface on the gas inlet chamber 14, and the gas inlet chamber 14 is further communicated with a doping gas source and an isolation gas source. As shown in fig. 3, the second reaction chamber 8 adopts a method of mixing reaction gases in the pipeline and then feeding the mixed reaction gases, the two reaction gases of the carbon source and the silicon source are mixed in the pipeline by controlling the flow rate of the reaction gases by the respective gas source branch mass flow meters 3, and a carrier gas is introduced into the mixing pipeline to accelerate the gas flow rate. Different doping gases are connected to the same inlet of the chamber and the gases are selected according to the wafer doping type (nitrogen is commonly used for N-type doping, and TMA is used for P-type doping).
Further, as shown in fig. 4, TMA is used for P-type doped semiconductor wafer preparation, TMA is normally liquid, and placed in the storage container 21. The two ends of TMA are respectively connected with a carrier gas inlet pipeline 19 and a mixed outlet pipeline 20, hydrogen is introduced to the position below the liquid level in the storage container 21 through a filter along the pipelines, and carrier gas carrying TMA enters the pipeline from the outlet pipeline and is mixed by multiple sections of carrier gases with controllable flow rate, so that the gas can smoothly flow to the reaction chamber 15 in the pipeline.
Each air source end is respectively provided with a shut-off valve 2 for controlling an air source main switch. And a filter is arranged at the gas inlet end of other process gases except the silicon source to remove the mixed other gases, so that the gas inlet purity is improved.
In one embodiment, the device further comprises a flow pressure control mechanism, wherein the flow pressure control mechanism comprises an exhaust pipeline and a tail gas treatment device 13, the bottom of the reaction chamber 15 is communicated with the exhaust pipeline, an exhaust valve 9 is installed on the exhaust pipeline, and the tail end of the exhaust pipeline is connected with the tail gas treatment device 13; a pipeline pressure gauge 10, a proportional valve 11 and a vacuum pump 12 are further sequentially arranged on the exhaust pipeline from the exhaust valve 9 to the tail gas treatment device 13. In the preparation process of the wafer, the pressure in the reaction chamber needs to be kept in a relatively dynamic and stable state, the exhaust pipeline and the exhaust valve 9 are normally opened, the vacuum pump 12 continuously pumps air, and the air is treated by the same tail gas treatment device 13 and then is discharged outwards. The reactant and dopant gas inlet lines may be pressure inlet. A pipe pressure gauge 10 is arranged in the exhaust pipeline to monitor the internal pressure of the reaction chamber, and the opening of the proportional valve 11 is adjusted in real time according to the measured value.
The gas inlet system can be used for simultaneously controlling the supply of gas required by film forming of the reaction cavity in two different gas inlet modes, and the two gas inlet modes are respectively switchable by independently controlling the introduction of the raw material gas into the gas inlet chamber and premixing the raw material gas in the pipeline with the doping gas. The number of the reaction chambers which are supplied simultaneously is not limited to two, and the number of the reaction chambers can be increased according to the requirement, and the increased reaction chambers are communicated with the gas source by adopting corresponding gas inlet pipeline layout. The flow parameter of the air inlet end is kept unchanged after being set, the opening of the proportional valve of the exhaust pipeline is adjusted in real time according to the value measured by the side pressure meter of the chamber, and the internal pressure of the chamber is kept relatively stable in the film forming process.
The utility model provides an air intake system for a plurality of reacting chambers of same air supply's advantage as follows:
1. the air inlet filter is arranged at the front air inlet section of the raw material gas, the raw material gas is purified, impurities can be reduced, and the film forming quality is improved to a certain degree.
2. The air inlet system adapts two different reaction chamber structures and air inlet modes to realize the expected functions. The reaction chamber for wafer growth is selected based on the technological requirement, and two film epitaxial growth modes, namely, the reaction gas inflow flow rate can be independently controlled and the reaction gas can be mixed to enter the doping gas type, can be respectively carried out.
3. The raw material gas of each branch is controlled by an independent valve and a flowmeter, and the reaction gas and the doping gas are respectively communicated with the carrier gas in the pipeline, so that the gas fluidity is improved, and the stable gas supply in the film forming process is ensured.
It should be noted that, as is obvious to a person skilled in the art, the invention is not limited to details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The utility model discloses a concrete example is applied to explain the principle and the implementation mode of the utility model, and the explanation of the above example is only used to help understand the method and the core idea of the utility model; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (8)
1. A gas inlet system for supplying a plurality of reaction chambers from a common gas source, comprising: comprises that
The main path of the reaction gas source is provided with a reaction gas source main valve which is used for controlling the whole opening and closing of the reaction gas source, the tail end of the main path of the reaction gas source is divided into a plurality of branches, each branch is provided with a shutoff valve and a mass flow meter, and the plurality of branches are respectively connected with different reaction chambers for simultaneous supply; the tail ends of the branches of the reaction gas sources are mutually independent or are communicated through pipelines and then are connected with different reaction chambers; and
the main path of the isolated gas source is provided with an isolated gas source main valve which is used for controlling the whole opening and closing of the isolated gas source, the tail end of the main path of the isolated gas source is divided into a plurality of branches, each branch is provided with a shutoff valve and a mass flow meter, and the plurality of branches are respectively connected with different reaction chambers for simultaneous supply; and
the main path of the doping gas source is provided with a doping gas source main valve which is used for controlling the whole opening and closing of the doping gas source, the tail end of the main path of the doping gas source is divided into a plurality of branches, each branch is provided with a shutoff valve and a mass flow meter, and the plurality of branches are respectively connected with different reaction chambers for simultaneous supply; and
the reaction chamber comprises an air inlet chamber and a base, the top of the reaction chamber is communicated with the air inlet chamber, the base is rotatably arranged in the reaction chamber, and a wafer is placed on a substrate on the base; the branch ends of the reaction gas source, the isolation gas source and the doped gas source are connected with the gas inlet chamber.
2. A gas inlet system for supplying multiple reaction chambers from the same gas source as recited in claim 1, wherein: and a mixed air inlet valve is arranged on one side of each branch of the reaction air source, the isolation air source and the doping air source, which is close to the reaction chamber.
3. A gas inlet system for supplying multiple reaction chambers with the same gas source as in claim 1, wherein: the reaction gas source comprises a carbon source and a silicon source; and an air inlet filter is arranged on the main path of the carbon source at the front gas inlet section.
4. A gas inlet system for supplying multiple reaction chambers from the same gas source as recited in claim 1, wherein: the isolated gas source comprises a hydrogen source, and a gas inlet filter is arranged on a main path of the hydrogen source and positioned at the gas inlet front section; and a pressure gauge is arranged on the main path of the hydrogen source close to the gas source side.
5. A gas inlet system for supplying multiple reaction chambers from the same gas source as recited in claim 1, wherein: the doping gas source comprises a TMA gas source or a nitrogen source, and gas inlet filters are arranged at the gas inlet front section on the main paths of the TMA gas source and the nitrogen source.
6. A gas inlet system for supplying multiple reaction chambers from the same gas source as recited in claim 3, wherein: the gas inlet mode of the gas inlet chamber is that a reaction gas source is independently controlled to be introduced, the tail ends of the branches of the carbon source and the silicon source are respectively connected with a carbon source connector and a silicon source connector on the reaction chamber, and the end part of the nozzle of the gas inlet chamber is also introduced with the isolation gas source.
7. A gas inlet system for supplying multiple reaction chambers from the same gas source as recited in claim 3, wherein: the gas inlet mode of the gas inlet chamber is that a reaction gas source is premixed in a pipeline and then is introduced, the branch ends of the carbon source and the silicon source are communicated through a pipeline and then are connected with a reaction gas source interface on the gas inlet chamber, and the gas inlet chamber is also communicated with the doping gas source and the isolation gas source.
8. A gas inlet system for supplying multiple reaction chambers from the same gas source as recited in claim 1, wherein: the device is characterized by further comprising a flow pressure control mechanism, wherein the flow pressure control mechanism comprises an exhaust pipeline and a tail gas treatment device, the bottom of the reaction chamber is communicated with the exhaust pipeline, an exhaust valve is mounted on the exhaust pipeline, and the tail end of the exhaust pipeline is connected with the tail gas treatment device; a pipeline pressure gauge, a proportional valve and a vacuum pump are sequentially arranged on the exhaust pipeline from the exhaust valve to the tail gas treatment device; the exhaust valve is in a normally open state, the pipeline pressure gauge is used for monitoring the pressure inside the cavity of the reaction chamber, and the opening degree of the proportional valve is adjusted in real time according to a numerical value measured by the pipeline pressure gauge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223224608.1U CN218666407U (en) | 2022-12-02 | 2022-12-02 | Air inlet system for supplying multiple reaction chambers by same air source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223224608.1U CN218666407U (en) | 2022-12-02 | 2022-12-02 | Air inlet system for supplying multiple reaction chambers by same air source |
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| Publication Number | Publication Date |
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| CN218666407U true CN218666407U (en) | 2023-03-21 |
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| CN202223224608.1U Active CN218666407U (en) | 2022-12-02 | 2022-12-02 | Air inlet system for supplying multiple reaction chambers by same air source |
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| CN (1) | CN218666407U (en) |
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Address after: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee after: Ningbo Hengpu Technology Co.,Ltd. Address before: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee before: Ningbo Hengpu Vacuum Technology Co.,Ltd. |