CN104638058A - High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency - Google Patents
High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency Download PDFInfo
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- CN104638058A CN104638058A CN201310570979.1A CN201310570979A CN104638058A CN 104638058 A CN104638058 A CN 104638058A CN 201310570979 A CN201310570979 A CN 201310570979A CN 104638058 A CN104638058 A CN 104638058A
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- diffusion
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- square resistance
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- AFCIMSXHQSIHQW-UHFFFAOYSA-N [O].[P] Chemical compound [O].[P] AFCIMSXHQSIHQW-UHFFFAOYSA-N 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical class ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a high-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency. The high-sheet-resistance diffusion process includes ultrasonic cleaning, alkaline liquor cleaning, acid liquor cleaning, drying by a dryer, diffusion by a diffusion furnace, etching, secondary cleaning, antireflection film plating, silk screen printing, sintering and finishing. The high-square-resistance diffusion process has the advantages that the temperature in the diffusion furnace is controlled in a range of 800-850 DEG C, gas flow is controlled in a range of 800-1000sccm, tests show that the temperature range and the flow range are the optimal diffusion temperature range and diffusion flow range of the diffusion furnace, square resistance can be increased, photoelectric conversion efficiency is increased, and quality of produced batteries is increased.
Description
Technical field
The present invention relates to a kind of solar cell, especially design a kind of high square resistance diffusion process method reducing costs raising conversion efficiency.
Background technology
Monocrystaline silicon solar cell, being the solar cell that is raw material with high-purity silicon single crystal rod, is the current a kind of solar cell developing the fastest.Its structure and production technology are shaped, product has been widely used in space and ground, thus improving constantly of its performance also will be the problem that photoelectric field must solve at present, current monocrystalline silicon battery production technology is mature on the whole, but because its cost is higher, also be not widely applied to every field at present, in the production of monocrystaline silicon solar cell, the conversion efficiency that how can improve light is a problem for research always.
Summary of the invention
For the problem of the conversion efficiency that current monocrystalline silicon battery exists, the invention provides a kind of high square resistance diffusion process method reducing costs raising conversion efficiency.
To achieve these goals, the technical solution adopted in the present invention is as follows:
Reduce costs the high square resistance diffusion process method improving conversion efficiency, comprise the following steps:
A, Ultrasonic Cleaning: the NaOH of 0.25% mass volume ratio adds the H of 4% volume ratio
2o
2solution, temperature 60 degrees Celsius, time 1min, removes greasy dirt and the finger-marks of silicon chip surface;
B, caustic dip: the NaOH solution of 2% mass fraction adds the TS4 making herbs into wool catalyst of 1-2% volume fraction, temperature 80 degrees Celsius, time 20min, corrosion of silicon surface, forms the matte of pyramid shape, increases light-receiving area;
C, acid solution are cleaned:, the hydrofluoric acid (concentration 49%) of 16% volume fraction and hydrochloric acid (concentration 37%) each pickling 5min of 28% volume fraction, remove oxide layer and the metal ion of silicon chip surface;
D, drier dry: utilize centrifugal force to dry 2-3min in drier;
E, diffusion furnace diffusion: the temperature in diffusion furnace controls between 800 ~ 850 DEG C, take source (phosphorus oxychloride source) gas flow and control to be 10 minutes, to form the PN junction of high square resistance (80-85 square resistance) in 800 ~ 1000sccm time;
F, etching: use plasma gas CF4, the periphery of etching silicon wafer, remove the PN junction of silicon chip surrounding;
G, secondary cleaning: one deck phosphorosilicate glass formed at silicon chip surface after hydrofluoric acid (concentration 49%) the removal diffusion of 10% volume fraction;
H, coated with antireflection film: the diffusingsurface of silicon chip plates one deck Si
3n
4antireflective coating, plays passivation and antireflecting effect;
I, silk screen printing: the positive electrode silver slurry of special pattern in the printing of the front of silicon chip, on the back up of silicon chip, the back electrode silver of special pattern is starched and back of the body passivation aluminium paste, and dries;
J, sintering: be divided into oven dry, sintering and cooling down three phases, form ohmic contact, the in-furnace temperature wherein sintering the stage controls at 900 ~ 950 DEG C;
K, finished product packing.
Further, in step e, diffusion furnace is provided with temperature controller and flow controller, controls temperature and the gas intake of diffusion furnace inside.
Further, source of the taking gas passed in step e is nitrogen, reacting gas is oxygen, and wherein the ratio of oxygen and nitrogen is 3:5.
The invention has the beneficial effects as follows: the temperature controlled in diffusion furnace remains between 800 ~ 850 DEG C, control gas flow between 800-1000sccm, because through experiment, temperature is too high, gas flow is excessive, square resistance is less, more electron recombination center can be produced, the quality of PN junction can be poor, the photoelectric conversion efficiency of battery can reduce, temperature is too low, gas flow is too small, square resistance is excessive, phosphorus atoms diffusion is not entered, the quality of knot equally can be poor, photoelectric conversion efficiency can reduce equally, therefore, the temperature that test is learnt in diffusion furnace should control 800 ~ 850 DEG C in the best, optimal gas flow should control at 800-1000sccm, controls temperature and flow, gets its optimal values, and make low complex centre and high-quality PN junction, photoelectric conversion efficiency is high, long service life.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
Reduce costs the high square resistance diffusion process method improving conversion efficiency, comprise the following steps:
A, Ultrasonic Cleaning: the NaOH of 0.25% mass volume ratio adds the H of 4% volume ratio
2o
2solution, temperature 60 degrees Celsius, time 1min, removes greasy dirt and the finger-marks of silicon chip surface;
B, caustic dip: the NaOH solution of 2% mass fraction adds the TS4 making herbs into wool catalyst of 1-2% volume fraction, temperature 80 degrees Celsius, time 20min, corrosion of silicon surface, forms the matte of pyramid shape, increases light-receiving area;
C, acid solution are cleaned:, the hydrofluoric acid (concentration 49%) of 16% volume fraction and hydrochloric acid (concentration 37%) each pickling 5min of 28% volume fraction, remove oxide layer and the metal ion of silicon chip surface;
D, drier dry: utilize centrifugal force to dry 2-3min in drier;
E, diffusion furnace diffusion: the temperature in diffusion furnace controls between 800-850 DEG C, gas flow controls at 800-1000sccm, diffusion furnace is provided with temperature controller and flow controller, control temperature and the gas intake of diffusion furnace inside, be convenient to control temperature and flow, source of the taking gas passed into is nitrogen, reacting gas is oxygen, wherein the ratio of oxygen and nitrogen is 3:5, nitrogen is used for tri-chlorination oxygen phosphorus liquid to carry into diffusion furnace, under high temperature, oxygen and tri-chlorination oxygen phosphorus reaction generate phosphorus atoms, in order to avoid producing a large amount of phosphorus pentachlorides, oxygen wants appropriate,
f, etching: the PN junction removing silicon chip lateral edge, because the PN junction electric leakage of lateral edge, using plasma dry etching;
G, secondary cleaning: one deck phosphorosilicate glass formed at silicon chip surface after hydrofluoric acid (concentration 49%) the removal diffusion of 10% volume fraction;
H, coated with antireflection film: at silicon chip surface coating silicon nitride, prevent light to be reflected the transformation efficiency reducing photoelectricity;
i, silk screen printing: the positive electrode silver slurry of special pattern in the printing of the front of silicon chip, on the back up of silicon chip, the back electrode silver of special pattern is starched and back of the body passivation aluminium paste, and dries;
J, sintering: be divided into oven dry, sintering and cooling down three phases, form ohmic contact, the in-furnace temperature wherein sintering the stage controls at 900 ~ 950 DEG C;
K, finished product packing.
What more than enumerate is only a specific embodiment of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be had.All distortion that those of ordinary skill in the art can directly derive from content disclosed by the invention or associate, all should think protection scope of the present invention.
Claims (3)
1. reduce costs the high square resistance diffusion process method improving conversion efficiency, it is characterized in that: comprise the following steps:
Ultrasonic Cleaning: the NaOH of 0.25% mass volume ratio adds the H of 4% volume ratio
2o
2solution, temperature 60 degrees Celsius, time 1min, removes greasy dirt and the finger-marks of silicon chip surface;
Caustic dip: the NaOH solution of 2% mass fraction adds the TS4 making herbs into wool catalyst of 1-2% volume fraction, temperature 80 degrees Celsius, time 20min, corrosion of silicon surface, forms the matte of pyramid shape, increases light-receiving area;
Acid solution is cleaned:, the hydrofluoric acid (concentration 49%) of 16% volume fraction and hydrochloric acid (concentration 37%) each pickling 5min of 28% volume fraction, remove oxide layer and the metal ion of silicon chip surface;
Drier dries: utilize centrifugal force to dry 2-3min in drier;
Diffusion furnace diffusion: the temperature in diffusion furnace controls between 800 ~ 850 DEG C, takes source (phosphorus oxychloride source) gas flow and controls to be 10 minutes, to form the PN junction of high square resistance (80-85 square resistance) in 800 ~ 1000sccm time;
Etching: use plasma gas CF4, the periphery of etching silicon wafer, removes the PN junction of silicon chip surrounding;
Secondary cleaning: one deck phosphorosilicate glass formed at silicon chip surface after hydrofluoric acid (concentration 49%) the removal diffusion of 10% volume fraction;
Coated with antireflection film: the diffusingsurface of silicon chip plates one deck Si
3n
4antireflective coating, plays passivation and antireflecting effect;
Silk screen printing: the positive electrode silver slurry of special pattern in the printing of the front of silicon chip, on the back up of silicon chip, the back electrode silver of special pattern is starched and back of the body passivation aluminium paste, and dries;
Sintering: be divided into oven dry, sintering and cooling down three phases, form ohmic contact, the in-furnace temperature wherein sintering the stage controls at 900 ~ 950 DEG C;
Finished product packing.
2. high square resistance diffusion process method according to claim 1, is characterized in that: diffusion furnace is provided with temperature controller and flow controller in step e, controls temperature and the gas intake of diffusion furnace inside.
3. high square resistance diffusion process method according to claim 1, is characterized in that: source of the taking gas passed in step e is nitrogen, reacting gas is oxygen, and wherein the ratio of oxygen and nitrogen is 3:5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310570979.1A CN104638058A (en) | 2013-11-15 | 2013-11-15 | High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310570979.1A CN104638058A (en) | 2013-11-15 | 2013-11-15 | High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104638058A true CN104638058A (en) | 2015-05-20 |
Family
ID=53216567
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|---|---|---|---|
| CN201310570979.1A Pending CN104638058A (en) | 2013-11-15 | 2013-11-15 | High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency |
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| CN (1) | CN104638058A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206169A (en) * | 2021-04-18 | 2021-08-03 | 安徽华晟新能源科技有限公司 | Aluminum gettering method and aluminum gettering equipment |
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2013
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Application publication date: 20150520 |