CN102087965B - 形成栅极结构侧墙的方法 - Google Patents
形成栅极结构侧墙的方法 Download PDFInfo
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- CN102087965B CN102087965B CN200910199996A CN200910199996A CN102087965B CN 102087965 B CN102087965 B CN 102087965B CN 200910199996 A CN200910199996 A CN 200910199996A CN 200910199996 A CN200910199996 A CN 200910199996A CN 102087965 B CN102087965 B CN 102087965B
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000005121 nitriding Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- -1 nitrogen ions Chemical class 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN200910199996A CN102087965B (zh) | 2009-12-04 | 2009-12-04 | 形成栅极结构侧墙的方法 |
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CN200910199996A CN102087965B (zh) | 2009-12-04 | 2009-12-04 | 形成栅极结构侧墙的方法 |
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CN102087965A CN102087965A (zh) | 2011-06-08 |
CN102087965B true CN102087965B (zh) | 2012-10-03 |
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CN200910199996A Expired - Fee Related CN102087965B (zh) | 2009-12-04 | 2009-12-04 | 形成栅极结构侧墙的方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102856257B (zh) * | 2011-07-01 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
CN104241103A (zh) * | 2013-06-14 | 2014-12-24 | 无锡华润上华科技有限公司 | 一种wsi复合栅的制造方法 |
CN105097464B (zh) * | 2014-05-06 | 2018-04-10 | 中芯国际集成电路制造(上海)有限公司 | 一种改善栅极结构线宽粗糙度的方法 |
CN105632937A (zh) * | 2016-03-25 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
CN105789129B (zh) * | 2016-05-11 | 2019-09-17 | 上海华虹宏力半导体制造有限公司 | 改善栅极侧墙形貌的方法及半导体器件制造方法 |
CN107591398A (zh) * | 2016-07-06 | 2018-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US10361282B2 (en) * | 2017-05-08 | 2019-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a low-K spacer |
CN110391299B (zh) * | 2018-04-23 | 2023-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101393862A (zh) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 栅极侧壁层的制造方法及半导体器件的制造方法 |
CN101593700A (zh) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | 侧墙、半导体器件及其形成方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101393862A (zh) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 栅极侧壁层的制造方法及半导体器件的制造方法 |
CN101593700A (zh) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | 侧墙、半导体器件及其形成方法 |
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Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121101 |
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Effective date of registration: 20121101 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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