CN102056913A - 锍衍生物及其作为潜酸的用途 - Google Patents

锍衍生物及其作为潜酸的用途 Download PDF

Info

Publication number
CN102056913A
CN102056913A CN200980121819.0A CN200980121819A CN102056913A CN 102056913 A CN102056913 A CN 102056913A CN 200980121819 A CN200980121819 A CN 200980121819A CN 102056913 A CN102056913 A CN 102056913A
Authority
CN
China
Prior art keywords
radical
alkyl
group
cycloalkyl
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980121819.0A
Other languages
English (en)
Chinese (zh)
Inventor
西前祐一
朝倉敏景
山户斉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of CN102056913A publication Critical patent/CN102056913A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D339/00—Heterocyclic compounds containing rings having two sulfur atoms as the only ring hetero atoms
    • C07D339/08—Six-membered rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D327/00—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms
    • C07D327/02—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms one oxygen atom and one sulfur atom
    • C07D327/06—Six-membered rings
    • C07D327/08—[b,e]-condensed with two six-membered carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Materials For Photolithography (AREA)
CN200980121819.0A 2008-06-12 2009-06-02 锍衍生物及其作为潜酸的用途 Pending CN102056913A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08158090 2008-06-12
EP08158090.4 2008-06-12
PCT/EP2009/056703 WO2009150074A1 (en) 2008-06-12 2009-06-02 Sulfonium derivatives and the use thereof as latent acids

Publications (1)

Publication Number Publication Date
CN102056913A true CN102056913A (zh) 2011-05-11

Family

ID=40469989

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980121819.0A Pending CN102056913A (zh) 2008-06-12 2009-06-02 锍衍生物及其作为潜酸的用途

Country Status (7)

Country Link
US (1) US20110171569A1 (enExample)
EP (1) EP2288599A1 (enExample)
JP (1) JP2011523971A (enExample)
KR (1) KR20110025211A (enExample)
CN (1) CN102056913A (enExample)
TW (1) TW201004934A (enExample)
WO (1) WO2009150074A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5622448B2 (ja) * 2010-06-15 2014-11-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP6002705B2 (ja) * 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
US9618848B2 (en) 2014-02-24 2017-04-11 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
DE112015000546T5 (de) 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
WO2017197279A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
JP6750155B2 (ja) 2016-05-13 2020-09-02 東京エレクトロン株式会社 光剤を用いた限界寸法制御
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
JP2022164585A (ja) * 2021-04-15 2022-10-27 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US20230004084A1 (en) * 2021-05-06 2023-01-05 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
JP7687292B2 (ja) * 2021-07-28 2025-06-03 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1693705A2 (en) * 2005-02-18 2006-08-23 Fuji Photo Film Co., Ltd. Resist composition, compound for use in the resist composition and pattern forming method using the resist composition

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7901867B2 (en) * 2005-07-01 2011-03-08 Basf Se Sulphonium salt initiators
KR101389057B1 (ko) * 2006-04-13 2014-05-13 시바 홀딩 인크 설포늄 염 개시제
TW200804243A (en) * 2006-06-20 2008-01-16 Ciba Sc Holding Ag Oxime sulfonates and the use thereof as latent acids
EP2125713B1 (en) * 2006-10-04 2012-04-18 Basf Se Sulphonium salt photoinitiators
US8652752B2 (en) * 2007-10-10 2014-02-18 Basf Se Sulphonium salt initiators
CN102026967B (zh) * 2007-10-10 2013-09-18 巴斯夫欧洲公司 锍盐引发剂
WO2009047151A1 (en) * 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1693705A2 (en) * 2005-02-18 2006-08-23 Fuji Photo Film Co., Ltd. Resist composition, compound for use in the resist composition and pattern forming method using the resist composition

Also Published As

Publication number Publication date
JP2011523971A (ja) 2011-08-25
EP2288599A1 (en) 2011-03-02
WO2009150074A1 (en) 2009-12-17
TW201004934A (en) 2010-02-01
KR20110025211A (ko) 2011-03-09
US20110171569A1 (en) 2011-07-14

Similar Documents

Publication Publication Date Title
CN102186815B (zh) 锍衍生物及其作为潜酸的用途
CN1989455B (zh) 肟衍生物和它们作为潜伏酸的用途
JP4560507B2 (ja) ハロゲン化オキシム誘導体及び潜在的酸としてのそれらの使用
JP5850863B2 (ja) 潜在性酸及びそれらの使用
KR100862281B1 (ko) 오늄 염, 이를 포함하는 화학적으로 증폭된 감광성 내식막 조성물 및 감광성 내식막의 제조방법
JP4620325B2 (ja) オキシム誘導体及び潜在的酸としてのその使用
EP3253735B1 (en) Latent acids and their use
US20100167178A1 (en) Oxime sulfonates and the use thereof as latent acids
CN102056913A (zh) 锍衍生物及其作为潜酸的用途
KR100875612B1 (ko) 치환된 옥심 유도체 및 이를 포함하는 조성물
JP2005517026A (ja) スルホナート誘導体及び潜酸としてのその使用

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110511