CN102051600B - 用于等离子处理腔的喷头组件 - Google Patents

用于等离子处理腔的喷头组件 Download PDF

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CN102051600B
CN102051600B CN201010552244.2A CN201010552244A CN102051600B CN 102051600 B CN102051600 B CN 102051600B CN 201010552244 A CN201010552244 A CN 201010552244A CN 102051600 B CN102051600 B CN 102051600B
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K·S·洛
十岛正人
W·T·布洛尼甘
L·卡恩
R·K·F·洛
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J37/32Gas-filled discharge tubes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

一种用于处理基板的等离子腔的喷头,包含喷头主体,喷头主体包含在它们之间限定空腔的顶板和底板;形成于顶板上的进气口;开孔板,其被放置于顶板和底板之间并将空腔分隔成为上部气体分隔间和下部气体分隔间;以及,其中,底板包含位于其底表面的多个长扩散槽和位于其顶表面的多个扩散孔,每一个扩散孔制造从下部气体分隔间至一个以上扩散槽的流体连通。

Description

用于等离子处理腔的喷头组件
相关申请的交叉引用
本申请要求2009年10月15日提交的美国临时专利申请号为61/252117的优先权,其公开内容整体以引用方式并入本申请。
技术领域
本申请涉及用于等离子处理腔的喷头,这种处理腔例如用于化学气相沉积(CVD)、等离子增强化学气相沉积(PECVD)以及薄膜蚀刻。
背景技术
等离子处理装置,例如,等离子增强化学沉积薄膜,利用喷头将气体导入腔中。在该领域中已知有各种用于等离子腔的喷头。喷头将处理气体运送至等离子处理腔中。设计喷头时需要考虑的一些问题包括气体的正确混合、气体在整个腔中的分布控制、喷头以及喷头中气体的温度控制、等离子种类对喷头的点蚀、气体运送速度、制造的复杂性和成本等。
喷头组件的设计是非常关键的,因为其直接影响到等离子腔中的处理质量。例如,喷头的设计直接影响到PECVD腔中沉积的薄膜的均匀性。当基板尺寸增加时,例如在处理用于LCD或薄膜太阳能电池板的大型基板时,沉积薄膜的均匀性变得很难控制。当执行批量处理时,即在同一腔中的数个基板上同时成膜时,均匀性也更难于控制。但是,现在明显的是,LCD的尺寸变得越来越大,并且近来太阳能电池板的普及增加了对在大型基板或多个基板上同时形成高质量薄膜的系统的需求。
当前技术中喷头的一个问题在于其制造的复杂性和成本,主要归因于气体扩散孔的侧面和形状。图9以剖视图举例说明了依据当前技术的喷头的局部视图。如图9所示,其中有许多气体扩散孔,它们的形状制造起来很复杂并且很昂贵。从顶表面钻孔得到小直径d的第一开孔900,通常采用具有非常优选有限的长度的小直径钻头,并且在制造单个零件的过程中 必需多次替换。然后在底表面钻孔得到直径较大的开孔905。在该步骤中非常重要的是,底部开孔905和顶部开孔900同轴对正,这使得喷头的制造变得复杂。而且,需要制造斜面910和915,进一步增加了制造成本。更进一步的是,由于开孔900的直径d小,不能采用传统的喷头喷砂处理,因为其会堵塞开孔。因此,必须采用特殊的化学清洗来替代,随后,进行近距离放大观察所有的开孔,以确保所有开孔畅通。
发明内容
下面的本发明的总结被包括用于提供本发明的一些方面和特征的基本理解。该总结不是本发明的外延概括,并且不意于特别确定本发明的关键或重要元件,或限定本发明的范围。其唯一的目的是作为前序以简化的方式为下面出现的更加详细的描述提出本发明的一些概念。
本发明的具体实施例提供了喷头组件,其更加易于制造并且制造成本显著降低,同时改善了气体的分布。依据本发明具体实施例制造的喷头不需要进行大量的小直径开孔的钻孔。本发明的具体实施例也不需要复杂的开孔形状。相反,采用档板完成了对气体分布梯度或均匀性的控制。第二板采用通向扩散槽的相对大直径的开孔将气体导入腔中。由于扩散槽较大,离子化可在扩散槽中发生而不损害喷头。在这种情况下,扩散板可称为气体离子化板。依据进一步的具体实施例,喷头组件被连接至RF发生器而还作为等离子腔的电极。
用于处理基板的等离子处理装置的喷头包含具有进气口的顶板;开孔板,其被放置于顶板下方并和顶板隔开一定距离,从而和顶板一起限定上部气体分隔间;扩散板,其被放置于开孔板下方并和开孔板隔开一定距离,从而限定下部气体分隔间,扩散板面对着待处理基板;并且,其中扩散板包含其下表面上的多个长扩散槽和其上表面上的多个扩散孔,每一个扩散孔制造从下部气体分隔间到一个以上扩散槽的流体流通。
用于处理基板的等离子处理装置的喷头包含喷头主体,该喷头主体包含在它们之间限定空腔的顶板和底板;形成于顶板上的进气口;开孔板,其被放置于顶板和底板之间,并且将腔分割为上部气体分隔间和下部气体分隔间;并且,其中,底板包含其下表面上的多个长扩散槽和其上表面上的多个扩散孔,每一个扩散孔制造从下部气体分隔间到一个以上扩散槽的流体流通。
依据本发明的具体实施例,公开了一种制造气体离子化板的简单且经济有效的方法,该方法包含制造板;采用组合铣刀在板的下表面形成多个气体离子化槽;以及从板的上表面钻出多个气体分配孔,使得每个孔到达并且敞开于多个气体离子化槽。
附图说明
本发明的其它方面和特征从关于下面附图进行的详细描述中显而易见。应当理解的是,详细描述和附图提供了由附属权利要求限定的各种本发明的具体实施例的各种非限制性实例。
附图被并入说明书中并且成为说明书的一部分,其举例说明了本发明的具体实施例,并且和文字描述一起用于解释和说明本发明的原理。附图以示意性图解的方式解释示例型实施例的特征。附图既不意于表述真实实施例的每个特征,也不意于表述所描述元件的相对尺寸,附图不是按比例绘制的。
图1A图解说明了可以包含依据本发明的喷头的等离子处理腔;
图1B以剖面图的形式示意性描述了依据本发明具体实施例的喷头的主要元件;
图2图解说明了依据本发明的具体实施例的开孔板/气体限流板的俯视图,同时局部图D显示了开孔板/气体限流板的特写部分;
图3图解说明了依据本发明的具体实施例的喷头的部分的剖视图;
图4图解说明了依据本发明具体实施例的扩散板的俯视图;
图5图解说明了依据本发明具体实施例的扩散板的仰视图;
图6图解说明了其中扩散板由单一金属板制成的实施例;
图7A-7D图解说明了开孔和槽的不同排列;
图8A和8B图解说明了依据本发明的具体实施例的经济有效地切削出扩散槽的方法;
图9图解说明了现有技术中喷头的开孔设计。
具体实施方式
图1A图解说明了等离子处理腔150,其可包含依据本发明的喷头155。在该例中,腔150包含装载门160用于装载和卸载基板。基板基座165可以为简单的基座,也可为包含有加热器、卡盘例如静电卡盘等的基座。基板基座165可以保持单个基板或多个基板。在该例中,基座支撑多个基板170,采用提升杆175可以将每个基板从基座165升起。而且,喷头155可以连接至地线或RF发生器的RF电压,例如,通过阻抗匹配电路(未显示)。
图1B以剖面图的形式示意性描述了依据本发明某一实施例的喷头的主要元件。在该特殊实例中,喷头为矩形,但也可以采用其它形状,这取决于等离子腔的形状。由于平板显示器和太阳能电池都在矩形腔中制造,因此在该实施例中喷头为矩形。
该喷头包含开孔板115,其可作为档板限制气流,并且其被放置为用以将喷头的内部空间分割为第一分隔间100和第二分隔间110。由于档板的流动限制作用,第一分隔间100中的气压高于第二分隔间。喷头的底部由扩散板130形成,在其下表面具有长扩散槽120,以面对正在处理的基板。扩散槽可以做得足够大到支撑槽内的气体离子化。扩散孔125和扩散槽120相连,使得气体能够从第二分隔间110通过扩散槽运送至处理区域。特别地,每一个扩散孔125和多个扩散槽120相连。该特征使得气体高传导地进入等离子腔。
如图1B中箭头所示,气体从气体源通过顶板145进入喷头,然后进入第一分隔间100。根据由开孔板的设计所决定的压力分布,开孔板115迫使气体分散进入第二分隔间110。以这种方式,可以控制从第一分隔间进入第二分隔间的气流。举例来说,可以对开孔的尺寸、数量和分布进行设计,使得气体按照特定的设计所期望的,以均匀地或以压力梯度的方式分配进入第二分隔间。依据本发明的具体实施例,可以制造直径在0.006”至0.500”范围内的开孔。
扩散孔125而后将气体分布进入扩散槽120。在该具体实施例中,扩散孔125为圆形并且竖直延伸,以形成从第二分隔间110至扩散槽120的流体通道。每个扩散孔125对应数个扩散槽形成通道。在该具体实施例中,扩散槽120具有矩形的剖面,并且每一个扩散槽120水平延伸喷头的整个长度,以使气体能够具有高传导率。依据本发明的具体实施例,可以制造直径在0.025”到2.000”范围内的扩散孔,同时可以制造宽度为0.010” 至1.000”、深度为0.010”至1.000”、槽距为0.015”至6.000”的扩散槽。
图2图解说明了依据本发明的具体实施例的开孔板115的俯视图,同时局部图D图解说明了开孔板115的特写部分。开孔板115具有很多的小孔以作为档板,以使气体可控地从第一分隔间100传送至第二分隔间110。该特征保证了气体的可控的均匀或梯度分布,而不管扩散板的高传导率。举例来说,在某些应用中可能需要均匀的气体分布,而在其它应用中可能需要中心高或中心低的气流。
图3图解说明了依据本发明具体实施例的喷头的部分剖视图。图3显示了上部气体分隔间100、档板(或限流板)115、下部气体分隔间110、气体分布孔125、气体分配槽120。如图所示,在该具体实施例中,每一个气体开孔125和数个气体槽120连接。同样,在该具体实施例中,开孔被交错布置以使每一行开孔都从其两边各自紧邻的另一行开孔偏移。如上所述,在该具体实施例中,开孔是圆形且是竖直的,以便每个开孔都形成从第二分隔间110到数个扩散槽120之间的通道。当然,也可采用其它的开孔形状。扩散槽120是水平的,且每个扩散槽和一行中的全部扩散孔125相交。同样,也可如将在其它具体实施例中所见的,每一个槽120可以和属于多个行的开孔相交。
图4图解说明了扩散板130的俯视图,即,从第二分隔间110的内部向下朝向等离子处理腔看的视图。图4显示了排列成行的圆形的气体开孔125,其中每一个气体开孔125都通向数个扩散槽120(扩散槽以虚线表示)。图4还显示了每个连续的扩散孔行是如何从其紧邻的行偏移而使开孔移位的。图5图解说明了扩散板130的仰视图,即从等离子处理腔的内部向着第二分隔间110观察。图5中实线表示槽120,虚线表示气体槽120后面的圆形气体开孔125。每一个开孔都通向数个扩散槽,每个扩散槽都和一行开孔中的全部开孔相交。
依据图6图解说明的具体实施例,扩散板由单一金属板制成。板的底表面被机加工成具有扩散槽620,同时板的顶表面被钻成具有成行的开孔625,使得每个钻好的开孔和数个扩散槽相交。在一个具体实施例中,每个开孔和三个扩散槽相交,其中一个在孔的中心处通过,另外两个则在孔的相反边处通过,如图6所示。由于开孔行交错排列,每个开孔具有一个通过其中心的扩散槽以及两个通过孔的相反边的扩散槽。
如上所述,也可采用其它的气体分配开孔和气体分配槽的排列方式。举例来说,图7A图解了一种排列方式,其提供了多行开孔,其中每行中的每个开孔和三个槽相交,并且每个槽和一行中的所有开孔相交。开孔行是对齐的,即不是交错排列的。也就是说,一行中的所有开孔700a和相邻开孔行中的开孔700b对齐。在这一方面,行被定义为在沿槽方向上对齐的开孔的集合。另一方面,图7B图解说明了如图3-5所示的交错排列的行的排列方式。也就是说,一行中的开孔700d相对于相邻开孔行中的开孔700c发生偏移。该偏移使得每个开孔700d精确地对齐于相邻行的两个开孔700c之间的中线。图7C图解说明了如下情况:其中开孔行对齐(即,不是交错排列),但是在垂直于槽的方向上偏移,使得某些槽和两个相邻的开孔行中的开孔相交。也就是说,一行中的开孔700f和其相邻行中的开孔700e精确对齐,但是其在垂直于槽的方向上存在偏移,使得一行中的开孔和连接到另一行中开孔的槽重叠。图7D图解说明了如下情况:其中相邻行中的开孔交错排列且偏移。也就是说,一行中的开孔700h被放置于相邻行的开孔700g之间的中线,并且开孔700h和还连接到相邻行中开孔700g的槽重叠。
图8A图解说明了沿图6中A-A向的剖视图,以能够理解依据本发明的具体实施例的制造方法。如图8A所示,圆锯800,也被称作组合铣刀,用于在气体分配板130的下表面机加工气体分配槽120。如图8B所示,具有多个刀片的组合铣刀用于在单行程中切割出数个槽120。钻头805用于从气体分配板的上表面钻出气体分配孔125。
应当理解的是,这里表述的过程和技术本质上并不涉及任何特殊的装置,并且可通过部件的任意合适的组合来实现。而且,按照这里表述的公开可以采用各同类型的通用装置。还可以证明对构造用以执行这里表述的方法步骤的特殊化的装置是具有优势地。
已通过特殊实例描述了本发明,这些实例在所有方面都意于进行解释而不是进行限制。本领域技术人员应该认识到硬件、软件和固件的许多不同组合适于实践本发明。此外,基于此处公开的本发明的说明书和实践,本发明的其它实现方式对于本领域技术人员来说也是显而易见的。说明书和实例仅应被认为是示例性的,而本发明的真实范围和精神通过下面的权利要求表示。

Claims (24)

1.一种用于处理基板的等离子处理装置的喷头组件,包含:
具有进气口的顶板;
开孔板,其被放置于所述顶板下面,并和所述顶板隔开一定距离,以和所述顶板一起限定上部气体分隔间;
气体分配板,其被放置于所述开孔板下面,并和所述开孔板隔开一段距离,以限定下部气体分隔间,所述气体分配板面对待处理的所述基板;以及
其中,所述气体分配板包含下表面上的多个长气体分配槽和上表面上的多个气体分配孔,每个所述气体分配孔的直径大于所述开孔板中开孔的直径,并且每一个所述气体分配孔形成从所述下部气体分隔间至一个以上所述气体分配槽之间的流体流通。
2.如权利要求1的喷头组件,其特征在于,所述气体分配孔排列为多个行,并且每个气体分配槽和一行中的所有孔相交。
3.如权利要求2的喷头组件,其特征在于,所述多个行在所述气体分配槽的方向上交错排列,使得气体分配孔的每一行从其紧邻的行偏移。
4.如权利要求2的喷头组件,其特征在于,所述多个行在垂直于所述气体分配槽的方向上偏移,使得气体分配孔行中的孔和与其紧邻的行中的孔相连接的至少一个气体分配槽重叠。
5.如权利要求3的喷头组件,其特征在于,所述多个行在垂直于所述气体分配槽的方向上偏移,使得气体分配孔行中的孔和与其紧邻的行中的孔相连接的至少一个气体分配槽重叠。
6.如权利要求1的喷头组件,其特征在于,所述气体分配板包含单一的金属板,所述单一的金属板具有被机加工形成所述气体分配槽的底表 面和被钻孔加工形成所述气体分配孔行的顶表面。
7.如权利要求1的喷头组件,其特征在于,所述开孔板被构造为用以提供进入所述下部气体分隔间的均匀的气体分布。
8.如权利要求1的喷头组件,其特征在于,所述开孔板被构造为用以提供进入所述下部气体分隔间的不均匀的气体分布。
9.如权利要求1的喷头组件,其特征在于,所述气体分配槽被构造为用以支持气体分配槽内的气体离子化。
10.如权利要求9的喷头组件,其特征在于,所述气体分配槽的宽度为0.010”至1.000”,深度为0.010”至1.000”,槽距为0.015”至3.000”。
11.如权利要求9的喷头组件,其特征在于,所述气体分配孔的直径为0.025”至6.000”。
12.如权利要求7或8的喷头组件,其特征在于,所述开孔的直径为0.006”至0.500”。
13.一种用于处理基板的等离子处理装置的喷头组件,包含:
喷头主体,其包含顶板和底部离子化板,在二者之间限定空腔;
形成在顶板中的进气口;
气体限流板,其被放置于所述顶板和所述离子化板之间,并将所述腔分隔成为上部气体分隔间和下部气体分隔间,并且限制气流使得所述上部气体分隔间的气压高于所述下部气体分隔间;以及
其中,所述底部离子化板包含单一的金属板,所述单一的金属板具有在底表面上机加工的多个长离子化槽和在顶表面钻孔加工的多个扩散孔,每一个所述扩散孔制造从所述下部气体分隔间至一个以上所述离子化槽的流体连通。
14.如权利要求13的喷头组件,其特征在于,所述扩散孔排列成多个行,并且每一个离子化槽和一行中的所有孔相交。
15.如权利要求14的喷头组件,其特征在于,所述多个行交错排列,使得每一个孔行从其紧邻的行偏移。
16.如权利要求14的喷头组件,其特征在于,所述多个行在垂直于所述离子化槽的方向上偏移,使得一行中的孔和与其紧邻的行中的孔相连接的至少一个离子化槽重叠。
17.如权利要求13的喷头组件,其特征在于,所述气体限流板包含被构造为用以提供进入所述下部气体分隔间的均匀气体分配的开孔。
18.如权利要求13的喷头组件,其特征在于,所述气体限流板包含被构造为用以提供进入所述下部气体分隔间的梯度气体分配的开孔。
19.如权利要求13的喷头组件,其特征在于,所述离子化槽的宽度为0.010”至1.000”,深度为0.010”至1.000”,槽距为0.015”至3.000”。
20.如权利要求13的喷头组件,其特征在于,所述气体扩散孔的直径为0.025”至6.000”。
21.如权利要求17或18的喷头组件,其特征在于,所述开孔的直径为0.006”至0.500”。
22.一种制造在等离子处理腔的喷头组件使用的气体离子化板的方法,包含:
制造板;
使用组合铣刀在所述板的下表面形成多个气体离子化槽;以及
从所述板的上表面钻出多个气体分配孔,使得每个孔到达并且敞开于多个所述气体离子化槽。
23.如权利要求22的方法,其特征在于,每个所述气体离子化槽被切割成0.010”至1.000”的深度和0.001”至1.000”的宽度。
24.如权利要求22的方法,其特征在于,每个所述气体分配孔被钻孔加工为0.010”至10.000”的深度和0.025”至6.000”的直径。
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