CN102051600A - 用于等离子处理腔的喷头组件 - Google Patents
用于等离子处理腔的喷头组件 Download PDFInfo
- Publication number
- CN102051600A CN102051600A CN2010105522442A CN201010552244A CN102051600A CN 102051600 A CN102051600 A CN 102051600A CN 2010105522442 A CN2010105522442 A CN 2010105522442A CN 201010552244 A CN201010552244 A CN 201010552244A CN 102051600 A CN102051600 A CN 102051600A
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- Prior art keywords
- gas
- nozzle component
- hole
- ionization
- gas distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 238000009826 distribution Methods 0.000 claims description 32
- 238000009832 plasma treatment Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 2
- 238000003892 spreading Methods 0.000 description 31
- 239000010408 film Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49428—Gas and water specific plumbing component making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/496—Multiperforated metal article making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T408/00—Cutting by use of rotating axially moving tool
- Y10T408/03—Processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25211709P | 2009-10-15 | 2009-10-15 | |
US61/252,117 | 2009-10-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102051600A true CN102051600A (zh) | 2011-05-11 |
CN102051600B CN102051600B (zh) | 2015-07-29 |
Family
ID=43566651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010552244.2A Active CN102051600B (zh) | 2009-10-15 | 2010-10-15 | 用于等离子处理腔的喷头组件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8617349B2 (zh) |
EP (1) | EP2312613B1 (zh) |
KR (1) | KR101687029B1 (zh) |
CN (1) | CN102051600B (zh) |
TW (1) | TWI430714B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102978589A (zh) * | 2012-12-04 | 2013-03-20 | 中国科学院电工研究所 | 一种pecvd喷淋电极 |
CN103074603A (zh) * | 2011-10-26 | 2013-05-01 | 绿种子材料科技股份有限公司 | 薄膜沉积系统及薄膜沉积方法 |
CN104835876A (zh) * | 2015-04-27 | 2015-08-12 | 北京金晟阳光科技有限公司 | 气体均匀布气装置 |
US9287152B2 (en) | 2009-12-10 | 2016-03-15 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing method |
US9462921B2 (en) | 2011-05-24 | 2016-10-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
CN107799379A (zh) * | 2012-09-21 | 2018-03-13 | 应用材料公司 | 基板处理腔室和半导体处理系统 |
CN110391120A (zh) * | 2018-04-17 | 2019-10-29 | 北京北方华创微电子装备有限公司 | 一种喷头和等离子体处理腔室 |
CN112192154A (zh) * | 2020-09-30 | 2021-01-08 | 靖江先锋半导体科技有限公司 | 刻蚀机用气体喷淋盘的加工工艺 |
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CN101611472B (zh) * | 2007-01-12 | 2015-03-25 | 威科仪器有限公司 | 气体处理系统 |
TWI490366B (zh) * | 2009-07-15 | 2015-07-01 | Applied Materials Inc | Cvd腔室之流體控制特徵結構 |
TWI430714B (zh) * | 2009-10-15 | 2014-03-11 | Orbotech Lt Solar Llc | 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法 |
JP5948040B2 (ja) * | 2010-11-04 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法及び半導体装置の作製方法 |
US10316409B2 (en) * | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
KR102061749B1 (ko) * | 2012-12-27 | 2020-01-02 | 주식회사 무한 | 기판 처리 장치 |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
CN104099583B (zh) * | 2013-04-09 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种进气装置、反应腔室及等离子体加工设备 |
CN104952760A (zh) * | 2014-03-24 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种进气装置及半导体加工设备 |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9865437B2 (en) * | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
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US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
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Also Published As
Publication number | Publication date |
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EP2312613A3 (en) | 2014-03-05 |
TWI430714B (zh) | 2014-03-11 |
EP2312613B1 (en) | 2016-04-13 |
US20110088847A1 (en) | 2011-04-21 |
EP2312613A2 (en) | 2011-04-20 |
KR20110041427A (ko) | 2011-04-21 |
TW201134314A (en) | 2011-10-01 |
KR101687029B1 (ko) | 2016-12-15 |
US8617349B2 (en) | 2013-12-31 |
CN102051600B (zh) | 2015-07-29 |
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