CN102031416B - 一种填充方钴矿基复合材料及其制备方法 - Google Patents

一种填充方钴矿基复合材料及其制备方法 Download PDF

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CN102031416B
CN102031416B CN200910196619A CN200910196619A CN102031416B CN 102031416 B CN102031416 B CN 102031416B CN 200910196619 A CN200910196619 A CN 200910196619A CN 200910196619 A CN200910196619 A CN 200910196619A CN 102031416 B CN102031416 B CN 102031416B
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China
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gasb
composite material
matrix
particles
gasb particles
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Expired - Fee Related
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CN200910196619A
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English (en)
Chinese (zh)
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CN102031416A (zh
Inventor
陈立东
熊震
陈喜红
黄向阳
张文清
何琳
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Shanghai Institute of Ceramics of CAS
Corning Inc
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Shanghai Institute of Ceramics of CAS
Corning Inc
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Priority to CN200910196619A priority Critical patent/CN102031416B/zh
Application filed by Shanghai Institute of Ceramics of CAS, Corning Inc filed Critical Shanghai Institute of Ceramics of CAS
Priority to PCT/US2010/049906 priority patent/WO2011038055A1/en
Priority to US13/497,833 priority patent/US8968589B2/en
Priority to IN3396DEN2012 priority patent/IN2012DN03396A/en
Priority to KR1020127011191A priority patent/KR20120106730A/ko
Priority to EP10760861.4A priority patent/EP2483205B1/en
Priority to JP2012532196A priority patent/JP5680090B2/ja
Publication of CN102031416A publication Critical patent/CN102031416A/zh
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/80—Compounds containing cobalt, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G51/82—Compounds containing cobalt, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/784—Electrically conducting, semi-conducting, or semi-insulating host material

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CN200910196619A 2009-09-28 2009-09-28 一种填充方钴矿基复合材料及其制备方法 Expired - Fee Related CN102031416B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN200910196619A CN102031416B (zh) 2009-09-28 2009-09-28 一种填充方钴矿基复合材料及其制备方法
US13/497,833 US8968589B2 (en) 2009-09-28 2010-09-23 Filled-skutterudite composite material and method of preparing the same
IN3396DEN2012 IN2012DN03396A (https=) 2009-09-28 2010-09-23
KR1020127011191A KR20120106730A (ko) 2009-09-28 2010-09-23 Ｇａｓｂ-충진된 스크테루다이트 복합물 및 그 제조 방법
PCT/US2010/049906 WO2011038055A1 (en) 2009-09-28 2010-09-23 Gasb-filled skutterudite composite material and method of preparing the same
EP10760861.4A EP2483205B1 (en) 2009-09-28 2010-09-23 Gasb-filled skutterudite composite material and method of preparing the same
JP2012532196A JP5680090B2 (ja) 2009-09-28 2010-09-23 Ｇａｓｂ充填スクッテルダイト複合材料、およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910196619A CN102031416B (zh) 2009-09-28 2009-09-28 一种填充方钴矿基复合材料及其制备方法

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CN102031416A CN102031416A (zh) 2011-04-27
CN102031416B true CN102031416B (zh) 2012-08-29

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US (1) US8968589B2 (https=)
EP (1) EP2483205B1 (https=)
JP (1) JP5680090B2 (https=)
KR (1) KR20120106730A (https=)
CN (1) CN102031416B (https=)
IN (1) IN2012DN03396A (https=)
WO (1) WO2011038055A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881814B (zh) * 2011-07-12 2015-11-25 中国科学院上海硅酸盐研究所 空穴补偿型方钴矿热电材料及其制备方法
CN104211024B (zh) * 2013-06-04 2016-02-10 中国科学院上海硅酸盐研究所 P型可逆相变高性能热电材料及其制备方法
KR101560455B1 (ko) * 2013-10-29 2015-10-14 희성금속 주식회사 방전 플라즈마 소결을 이용한 LCD Glass 제조용 산화물 분산 강화형 백금­로듐 합금의 제조 방법
CN104498751B (zh) * 2014-12-25 2017-01-18 中国科学院上海硅酸盐研究所 一种方钴矿热电材料的制备方法
JP6655918B2 (ja) * 2015-09-10 2020-03-04 学校法人中部大学 熱電材料
CN105936985A (zh) * 2016-06-30 2016-09-14 东华大学 一种高性能多尺寸纳米结构方钴矿材料的制备方法
JP6862937B2 (ja) * 2017-03-08 2021-04-21 株式会社豊田中央研究所 ｐ型熱電材料
KR102122573B1 (ko) * 2017-03-09 2020-06-12 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
EP3742504A4 (en) * 2018-01-15 2021-10-20 Hitachi Metals, Ltd. MATERIAL FOR THERMOELECTRIC CONVERSION, MODULE FOR THERMOELECTRIC CONVERSION AND METHOD FOR MANUFACTURING A MATERIAL FOR THERMOELECTRIC CONVERSION
TWI683910B (zh) * 2018-10-18 2020-02-01 國立中山大學 熱電合金及其製作方法與熱電合金複合物
CN114497335B (zh) * 2022-01-20 2024-12-27 济南大学 一种方钴矿热电材料电极以及方钴矿热电材料与电极的连接方法
CN115528165A (zh) * 2022-10-27 2022-12-27 南京工业大学 一种n型GeTe基热电材料及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207888B1 (en) * 1997-10-10 2001-03-27 Marlow Industries, Inc. Semiconductor materials with skutterudite type crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
CN1916211A (zh) * 2006-08-29 2007-02-21 中国科学院上海硅酸盐研究所 一种碱金属原子填充锑化钴基方钴矿热电材料及其制备方法
CN1943052A (zh) * 2004-04-14 2007-04-04 纳幕尔杜邦公司 高性能热电材料和它们的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994639A (en) * 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds
EP0874406A3 (en) 1997-04-23 2000-12-13 Matsushita Electric Industrial Co., Ltd. A co-sb based thermoelectric material and a method of producing the same
GB0724752D0 (en) 2007-12-19 2008-01-30 Bari Mazhar A Method for producing a thermoelectric material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207888B1 (en) * 1997-10-10 2001-03-27 Marlow Industries, Inc. Semiconductor materials with skutterudite type crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
CN1943052A (zh) * 2004-04-14 2007-04-04 纳幕尔杜邦公司 高性能热电材料和它们的制备方法
CN1916211A (zh) * 2006-08-29 2007-02-21 中国科学院上海硅酸盐研究所 一种碱金属原子填充锑化钴基方钴矿热电材料及其制备方法

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Publication number Publication date
CN102031416A (zh) 2011-04-27
US8968589B2 (en) 2015-03-03
US20130043439A1 (en) 2013-02-21
EP2483205A1 (en) 2012-08-08
JP5680090B2 (ja) 2015-03-04
WO2011038055A1 (en) 2011-03-31
JP2013506312A (ja) 2013-02-21
KR20120106730A (ko) 2012-09-26
IN2012DN03396A (https=) 2015-10-23
EP2483205B1 (en) 2016-03-30

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