CN102024674B - 基片处理装置及为此使用的覆盖构件 - Google Patents
基片处理装置及为此使用的覆盖构件 Download PDFInfo
- Publication number
- CN102024674B CN102024674B CN2009102074634A CN200910207463A CN102024674B CN 102024674 B CN102024674 B CN 102024674B CN 2009102074634 A CN2009102074634 A CN 2009102074634A CN 200910207463 A CN200910207463 A CN 200910207463A CN 102024674 B CN102024674 B CN 102024674B
- Authority
- CN
- China
- Prior art keywords
- substrate
- cover part
- processing device
- substrate processing
- support plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 248
- 238000012545 processing Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 238000012876 topography Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009489 vacuum treatment Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090087379A KR101565537B1 (ko) | 2009-09-16 | 2009-09-16 | 진공처리장치 및 그에 사용되는 커버부재 |
KR10-2009-0087379 | 2009-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102024674A CN102024674A (zh) | 2011-04-20 |
CN102024674B true CN102024674B (zh) | 2013-04-10 |
Family
ID=43865835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102074634A Expired - Fee Related CN102024674B (zh) | 2009-09-16 | 2009-11-05 | 基片处理装置及为此使用的覆盖构件 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101565537B1 (zh) |
CN (1) | CN102024674B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102479877A (zh) * | 2010-11-19 | 2012-05-30 | 金元求 | 太阳能电池制造装置及其系统及太阳能电池 |
CN102479878A (zh) * | 2010-11-19 | 2012-05-30 | 金元求 | 太阳能电池制造方法及根据该制造方法制造的太阳能电池 |
KR102095991B1 (ko) * | 2016-10-06 | 2020-04-23 | 주식회사 원익아이피에스 | 기판처리장치 |
CN108054245A (zh) * | 2018-01-11 | 2018-05-18 | 常州比太黑硅科技有限公司 | 一种干法制绒设备工艺反应腔 |
WO2023132549A1 (ko) * | 2022-01-07 | 2023-07-13 | 주성엔지니어링(주) | 기판처리장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1367933A (zh) * | 1999-06-30 | 2002-09-04 | 兰姆研究公司 | 用于半导体处理的气体分配设备 |
CN101469416A (zh) * | 2007-12-26 | 2009-07-01 | 周星工程股份有限公司 | 用于处理衬底的设备 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0236276Y2 (zh) * | 1985-01-10 | 1990-10-03 | ||
JP3690372B2 (ja) | 2002-06-27 | 2005-08-31 | 松下電器産業株式会社 | プラズマ処理装置 |
-
2009
- 2009-09-16 KR KR1020090087379A patent/KR101565537B1/ko active IP Right Grant
- 2009-11-05 CN CN2009102074634A patent/CN102024674B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1367933A (zh) * | 1999-06-30 | 2002-09-04 | 兰姆研究公司 | 用于半导体处理的气体分配设备 |
CN101469416A (zh) * | 2007-12-26 | 2009-07-01 | 周星工程股份有限公司 | 用于处理衬底的设备 |
Also Published As
Publication number | Publication date |
---|---|
KR20110029621A (ko) | 2011-03-23 |
CN102024674A (zh) | 2011-04-20 |
KR101565537B1 (ko) | 2015-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: YUANYI IPS CO., LTD. Free format text: FORMER OWNER: JIN BINGJUN Effective date: 20120905 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120905 Address after: Gyeonggi Do, South Korea Applicant after: WONIK IPS Co.,Ltd. Address before: Chungnam, South Korea Applicant before: Jin Bingjun |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20160726 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130410 Termination date: 20211105 |