CN102020668A - 工业化制备三甲基铟的方法 - Google Patents
工业化制备三甲基铟的方法 Download PDFInfo
- Publication number
- CN102020668A CN102020668A CN 201010599987 CN201010599987A CN102020668A CN 102020668 A CN102020668 A CN 102020668A CN 201010599987 CN201010599987 CN 201010599987 CN 201010599987 A CN201010599987 A CN 201010599987A CN 102020668 A CN102020668 A CN 102020668A
- Authority
- CN
- China
- Prior art keywords
- indium
- trimethyl indium
- reaction
- trimethyl
- industrialization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 239000002904 solvent Substances 0.000 claims abstract description 25
- 229910000861 Mg alloy Inorganic materials 0.000 claims abstract description 18
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 150000001350 alkyl halides Chemical class 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 43
- 238000010992 reflux Methods 0.000 claims description 17
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 238000013019 agitation Methods 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 10
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 8
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 claims description 4
- 230000006837 decompression Effects 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 230000002269 spontaneous effect Effects 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000002485 combustion reaction Methods 0.000 abstract 1
- 239000004210 ether based solvent Substances 0.000 abstract 1
- 150000002170 ethers Chemical class 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000004871 chemical beam epitaxy Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- -1 indium gallium phosphorus compound Chemical class 0.000 description 2
- 229940055742 indium-111 Drugs 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-AHCXROLUSA-N indium-111 Chemical compound [111In] APFVFJFRJDLVQX-AHCXROLUSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010555 transalkylation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
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Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201010599987 CN102020668B (zh) | 2010-12-22 | 2010-12-22 | 工业化制备三甲基铟的方法 |
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CN 201010599987 CN102020668B (zh) | 2010-12-22 | 2010-12-22 | 工业化制备三甲基铟的方法 |
Publications (2)
Publication Number | Publication Date |
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CN102020668A true CN102020668A (zh) | 2011-04-20 |
CN102020668B CN102020668B (zh) | 2013-03-13 |
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CN 201010599987 Active CN102020668B (zh) | 2010-12-22 | 2010-12-22 | 工业化制备三甲基铟的方法 |
Country Status (1)
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CN (1) | CN102020668B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103204864A (zh) * | 2013-03-21 | 2013-07-17 | 苏州普耀光电材料有限公司 | 一种高纯三甲基铟的制备方法 |
CN110950911A (zh) * | 2018-09-26 | 2020-04-03 | 东泰高科装备科技有限公司 | 三甲基胂的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993010126A1 (en) * | 1991-11-19 | 1993-05-27 | Air Products And Chemicals, Inc. | Process for the preparation of trialkyl gallium compounds |
-
2010
- 2010-12-22 CN CN 201010599987 patent/CN102020668B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993010126A1 (en) * | 1991-11-19 | 1993-05-27 | Air Products And Chemicals, Inc. | Process for the preparation of trialkyl gallium compounds |
Non-Patent Citations (2)
Title |
---|
《Zeitschrift für anorganische und allgemeine Chemie》 19630331 Von E. Todt.et al. Darstellung von Indium-trialkylen über In-Mg-Legierung oder-Mischung 120-123 1-5 第321卷, 第3-4期 * |
《低温与特气》 19901001 Е.А.Ефремов,等 三甲基铟的分离与纯化方法 40-41 1-5 , 第3期 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103204864A (zh) * | 2013-03-21 | 2013-07-17 | 苏州普耀光电材料有限公司 | 一种高纯三甲基铟的制备方法 |
CN103204864B (zh) * | 2013-03-21 | 2015-08-26 | 苏州普耀光电材料有限公司 | 一种高纯三甲基铟的制备方法 |
CN110950911A (zh) * | 2018-09-26 | 2020-04-03 | 东泰高科装备科技有限公司 | 三甲基胂的制备方法 |
CN110950911B (zh) * | 2018-09-26 | 2021-10-08 | 紫石能源有限公司 | 三甲基胂的制备方法 |
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Publication number | Publication date |
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CN102020668B (zh) | 2013-03-13 |
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Application publication date: 20110420 Assignee: Suzhou ronghua Leasing Co.,Ltd. Assignor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Contract record no.: X2021320010037 Denomination of invention: Industrialized preparation of trimethylindium Granted publication date: 20130313 License type: Exclusive License Record date: 20211116 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Industrialized preparation of trimethylindium Effective date of registration: 20211116 Granted publication date: 20130313 Pledgee: Suzhou ronghua Leasing Co.,Ltd. Pledgor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Registration number: Y2021320010476 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Suzhou ronghua Leasing Co.,Ltd. Assignor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Contract record no.: X2021320010037 Date of cancellation: 20240105 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20130313 Pledgee: Suzhou ronghua Leasing Co.,Ltd. Pledgor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Registration number: Y2021320010476 |