CN102017052B - 投影透镜装置 - Google Patents

投影透镜装置 Download PDF

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Publication number
CN102017052B
CN102017052B CN200980114872.8A CN200980114872A CN102017052B CN 102017052 B CN102017052 B CN 102017052B CN 200980114872 A CN200980114872 A CN 200980114872A CN 102017052 B CN102017052 B CN 102017052B
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CN
China
Prior art keywords
projection lens
array
end module
plate
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980114872.8A
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English (en)
Chinese (zh)
Other versions
CN102017052A (zh
Inventor
简·J·维兰德
伯特·J·坎菲尔贝克
亚历山大·H·V·范维恩
皮特·克鲁伊特
斯蒂杰恩·W·H·K·斯蒂恩布林克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN102017052A publication Critical patent/CN102017052A/zh
Application granted granted Critical
Publication of CN102017052B publication Critical patent/CN102017052B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
CN200980114872.8A 2008-02-26 2009-01-26 投影透镜装置 Active CN102017052B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3157308P 2008-02-26 2008-02-26
US61/031,573 2008-02-26
PCT/EP2009/050843 WO2009106397A1 (en) 2008-02-26 2009-01-26 Projection lens arrangement

Publications (2)

Publication Number Publication Date
CN102017052A CN102017052A (zh) 2011-04-13
CN102017052B true CN102017052B (zh) 2013-09-04

Family

ID=40578320

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980114872.8A Active CN102017052B (zh) 2008-02-26 2009-01-26 投影透镜装置

Country Status (7)

Country Link
US (1) US20090261267A1 (https=)
EP (1) EP2250660A1 (https=)
JP (1) JP5408674B2 (https=)
KR (1) KR101481950B1 (https=)
CN (1) CN102017052B (https=)
TW (1) TWI480914B (https=)
WO (1) WO2009106397A1 (https=)

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NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
WO2010134018A2 (en) 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Pattern data conversion for lithography system
EP2433294B1 (en) 2009-05-20 2016-07-27 Mapper Lithography IP B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
KR101757837B1 (ko) 2009-05-20 2017-07-26 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP5951753B2 (ja) 2011-04-22 2016-07-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル
TWI514089B (zh) 2011-04-28 2015-12-21 瑪波微影Ｉｐ公司 在微影系統中用於轉移基板的設備
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
CN104272427B (zh) 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
JP6014342B2 (ja) * 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
JP6224252B2 (ja) 2013-09-07 2017-11-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． 標的処理ユニット
CN108962708A (zh) 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
CN104715987B (zh) * 2013-12-13 2017-02-15 中国科学院大连化学物理研究所 一种紧凑型偏转会聚离子束的静电透镜
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6568627B2 (ja) * 2018-07-10 2019-08-28 株式会社日立ハイテクノロジーズ イオンビーム装置
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
WO2022058253A2 (en) 2020-09-17 2022-03-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method
KR20230122666A (ko) * 2020-12-23 2023-08-22 에이에스엠엘 네델란즈 비.브이. 하전 입자 광학 디바이스
EP4020516A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods

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JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
CN1708826A (zh) * 2002-10-30 2005-12-14 迈普尔平版印刷Ip有限公司 电子束曝光系统

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JP3796317B2 (ja) * 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
WO2003040829A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Maskless printer using photoelectric conversion of a light beam array
JP2005032837A (ja) * 2003-07-08 2005-02-03 Canon Inc 荷電粒子描画方法及び該方法を用いたデバイス製造方法
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
CN1708826A (zh) * 2002-10-30 2005-12-14 迈普尔平版印刷Ip有限公司 电子束曝光系统

Also Published As

Publication number Publication date
WO2009106397A1 (en) 2009-09-03
JP5408674B2 (ja) 2014-02-05
TW200939282A (en) 2009-09-16
US20090261267A1 (en) 2009-10-22
KR20110004371A (ko) 2011-01-13
TWI480914B (zh) 2015-04-11
KR101481950B1 (ko) 2015-01-14
EP2250660A1 (en) 2010-11-17
CN102017052A (zh) 2011-04-13
JP2011514633A (ja) 2011-05-06

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
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Effective date of registration: 20190528

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: About Holland

Patentee before: Mapper Lithography IP B. V.