JP5408674B2 - 投影レンズ構成体 - Google Patents

投影レンズ構成体 Download PDF

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Publication number
JP5408674B2
JP5408674B2 JP2010548047A JP2010548047A JP5408674B2 JP 5408674 B2 JP5408674 B2 JP 5408674B2 JP 2010548047 A JP2010548047 A JP 2010548047A JP 2010548047 A JP2010548047 A JP 2010548047A JP 5408674 B2 JP5408674 B2 JP 5408674B2
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JP
Japan
Prior art keywords
plate
projection lens
array
aperture
apertures
Prior art date
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JP2010548047A
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English (en)
Japanese (ja)
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JP2011514633A (ja
JP2011514633A5 (https=
Inventor
ウィーランド、マルコ・ヤン・ヤコ
カンファーベーク、ベルト・ヤン
ファン・フェーン、アレクサンダー・ヘンドリク・ビンセント
クルイト、ペーテル
ステーンブリンク、スティーン・ウィレム・ヘルマン・カレル
Original Assignee
マッパー・リソグラフィー・アイピー・ビー．ブイ．
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Publication of JP2011514633A5 publication Critical patent/JP2011514633A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2010548047A 2008-02-26 2009-01-26 投影レンズ構成体 Active JP5408674B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3157308P 2008-02-26 2008-02-26
US61/031,573 2008-02-26
PCT/EP2009/050843 WO2009106397A1 (en) 2008-02-26 2009-01-26 Projection lens arrangement

Publications (3)

Publication Number Publication Date
JP2011514633A JP2011514633A (ja) 2011-05-06
JP2011514633A5 JP2011514633A5 (https=) 2012-03-15
JP5408674B2 true JP5408674B2 (ja) 2014-02-05

Family

ID=40578320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010548047A Active JP5408674B2 (ja) 2008-02-26 2009-01-26 投影レンズ構成体

Country Status (7)

Country Link
US (1) US20090261267A1 (https=)
EP (1) EP2250660A1 (https=)
JP (1) JP5408674B2 (https=)
KR (1) KR101481950B1 (https=)
CN (1) CN102017052B (https=)
TW (1) TWI480914B (https=)
WO (1) WO2009106397A1 (https=)

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NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
WO2010134018A2 (en) 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Pattern data conversion for lithography system
EP2433294B1 (en) 2009-05-20 2016-07-27 Mapper Lithography IP B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
KR101757837B1 (ko) 2009-05-20 2017-07-26 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP5951753B2 (ja) 2011-04-22 2016-07-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル
TWI514089B (zh) 2011-04-28 2015-12-21 瑪波微影Ｉｐ公司 在微影系統中用於轉移基板的設備
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
CN104272427B (zh) 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
JP6014342B2 (ja) * 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
JP6224252B2 (ja) 2013-09-07 2017-11-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． 標的処理ユニット
CN108962708A (zh) 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
CN104715987B (zh) * 2013-12-13 2017-02-15 中国科学院大连化学物理研究所 一种紧凑型偏转会聚离子束的静电透镜
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6568627B2 (ja) * 2018-07-10 2019-08-28 株式会社日立ハイテクノロジーズ イオンビーム装置
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
WO2022058253A2 (en) 2020-09-17 2022-03-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method
KR20230122666A (ko) * 2020-12-23 2023-08-22 에이에스엠엘 네델란즈 비.브이. 하전 입자 광학 디바이스
EP4020516A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796317B2 (ja) * 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
WO2003040829A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Maskless printer using photoelectric conversion of a light beam array
JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
AU2003276779A1 (en) * 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
JP2005032837A (ja) * 2003-07-08 2005-02-03 Canon Inc 荷電粒子描画方法及び該方法を用いたデバイス製造方法
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system

Also Published As

Publication number Publication date
WO2009106397A1 (en) 2009-09-03
TW200939282A (en) 2009-09-16
US20090261267A1 (en) 2009-10-22
KR20110004371A (ko) 2011-01-13
TWI480914B (zh) 2015-04-11
CN102017052B (zh) 2013-09-04
KR101481950B1 (ko) 2015-01-14
EP2250660A1 (en) 2010-11-17
CN102017052A (zh) 2011-04-13
JP2011514633A (ja) 2011-05-06

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