TWI480914B - 末端模組及帶電粒子的多子束系統 - Google Patents

末端模組及帶電粒子的多子束系統 Download PDF

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Publication number
TWI480914B
TWI480914B TW098103622A TW98103622A TWI480914B TW I480914 B TWI480914 B TW I480914B TW 098103622 A TW098103622 A TW 098103622A TW 98103622 A TW98103622 A TW 98103622A TW I480914 B TWI480914 B TW I480914B
Authority
TW
Taiwan
Prior art keywords
projection lens
end module
array
beamlet
sheet
Prior art date
Application number
TW098103622A
Other languages
English (en)
Chinese (zh)
Other versions
TW200939282A (en
Inventor
Marco Jan-Jaco Wieland
Bert Jan Kampherbeek
Veen Alexander Hendrik Vincent Van
Pieter Kruit
Stijn Willem Herman Karel Steenbrink
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW200939282A publication Critical patent/TW200939282A/zh
Application granted granted Critical
Publication of TWI480914B publication Critical patent/TWI480914B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
TW098103622A 2008-02-26 2009-02-05 末端模組及帶電粒子的多子束系統 TWI480914B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3157308P 2008-02-26 2008-02-26

Publications (2)

Publication Number Publication Date
TW200939282A TW200939282A (en) 2009-09-16
TWI480914B true TWI480914B (zh) 2015-04-11

Family

ID=40578320

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103622A TWI480914B (zh) 2008-02-26 2009-02-05 末端模組及帶電粒子的多子束系統

Country Status (7)

Country Link
US (1) US20090261267A1 (https=)
EP (1) EP2250660A1 (https=)
JP (1) JP5408674B2 (https=)
KR (1) KR101481950B1 (https=)
CN (1) CN102017052B (https=)
TW (1) TWI480914B (https=)
WO (1) WO2009106397A1 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
CN102460631B (zh) 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
KR101614460B1 (ko) 2009-05-20 2016-04-21 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템을 위한 패턴 데이터 전환
CN102460632B (zh) 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP5951753B2 (ja) 2011-04-22 2016-07-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
WO2013132064A2 (en) 2012-03-08 2013-09-12 Mapper Lithography Ip B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
JP6014342B2 (ja) 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
CN107359101B (zh) 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却
CN107272352B (zh) 2013-09-07 2021-02-02 Asml荷兰有限公司 目标处理单元
NL2013814B1 (en) 2013-11-14 2016-05-10 Mapper Lithography Ip Bv Multi-electrode vacuum arrangement.
CN104715987B (zh) * 2013-12-13 2017-02-15 中国科学院大连化学物理研究所 一种紧凑型偏转会聚离子束的静电透镜
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6568627B2 (ja) * 2018-07-10 2019-08-28 株式会社日立ハイテクノロジーズ イオンビーム装置
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
IL300807A (en) 2020-09-17 2023-04-01 Asml Netherlands Bv Charged particle evaluation tool test method
EP4020516A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
JP2024501654A (ja) * 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子光学デバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905267A (en) * 1996-06-12 1999-05-18 Canon Kabushiki Kaisha Electron beam exposure apparatus and method of controlling same
US20040141169A1 (en) * 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
US20050006603A1 (en) * 2003-07-08 2005-01-13 Canon Kabushiki Kaisha Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
CN101084567A (zh) * 2004-11-17 2007-12-05 Nfab有限公司 聚焦掩模

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
CN1602451A (zh) * 2001-11-07 2005-03-30 应用材料有限公司 无掩膜光子电子点格栅阵列光刻机
JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905267A (en) * 1996-06-12 1999-05-18 Canon Kabushiki Kaisha Electron beam exposure apparatus and method of controlling same
US20040141169A1 (en) * 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
US6897458B2 (en) * 2002-10-30 2005-05-24 Mapper Lithography Ip B.V. Electron beam exposure system
US20050006603A1 (en) * 2003-07-08 2005-01-13 Canon Kabushiki Kaisha Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
US7049610B2 (en) * 2003-07-08 2006-05-23 Canon Kabushiki Kaisha Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
CN101084567A (zh) * 2004-11-17 2007-12-05 Nfab有限公司 聚焦掩模

Also Published As

Publication number Publication date
EP2250660A1 (en) 2010-11-17
KR20110004371A (ko) 2011-01-13
TW200939282A (en) 2009-09-16
CN102017052A (zh) 2011-04-13
JP2011514633A (ja) 2011-05-06
CN102017052B (zh) 2013-09-04
WO2009106397A1 (en) 2009-09-03
KR101481950B1 (ko) 2015-01-14
JP5408674B2 (ja) 2014-02-05
US20090261267A1 (en) 2009-10-22

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