CN102000912A - Laser micro/nano processing system and method - Google Patents
Laser micro/nano processing system and method Download PDFInfo
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Abstract
The invention provides a laser micro/nano processing system and a laser micro/nano processing method. The system of the invention comprises a laser light source, an optical retardation component, an optical focusing component and a computer-controlled micro mobile station, wherein the laser light source is used for providing a first laser beam having a first wavelength and a second laser beam having a second wavelength, the pulse widths of the first laser beam and the second laser beam range from femtosecond to nanosecond and the first wavelength is different from the second wavelength; the optical retardation component is used for regulating the optical path of the first laser beam or the second laser beam so that the difference between the arrival times of the first laser beam and the second laser beam at a focus is not greater than the level life time for a photochromic material to be processed to be excited to an excited state; the optical focusing component is used for focusing the first laser beam and the second laser beam onto the same focus; and the computer-controlled micro mobile station is used for regulating a photochromic material on the computer-controlled micro mobile station to the focus.
Description
Technical field
The present invention relates to a kind of laser micro-nano processing method and system of processing, laser micro-nano method for processing and system that particularly a kind of machining resolution and machining accuracy can accurately be controlled.
Background technology
Since over half a century, photoetching technique occupies the dominant position of micro-nano process technology always.When utilizing laser technology to carry out materials processing, its machining resolution that can reach is subjected to the restriction of classical optics diffraction limit always, be difficult to carry out the processing of nanoscale, this problem is that development nano-photon process technology needs the at first core problem in science of solution, also is the focus that this area scientist is paid close attention to.
Femtosecond laser micro-nano processing is the novel ultra tiny process technology that integrates ultrafast laser technique, microtechnic, superhigh precision location technology, 3-D graphic CAD manufacturing technology and actinic material technology, has simple, low cost, high-resolution, true characteristics such as three-dimensional.This technology is utilized the two-photon absorption effect, laser and material sphere of action can be confined in the very little zone, thereby reach the following machining resolution of diffraction limit.Calendar year 2001, the femtosecond pulse of human 780nm such as Satoshi Kawata has obtained the machining resolution of 120nm, and prepares three-dimensional manometer ox structure, sees Nature, Satoshi Kawata etc., 2001,412 (6848): 697-698.2008, people such as Xian-Zi Dong realized the machining resolution of 50nm by controlling laser parameter, see Appl.Phys.Lett., Xian-Zi Dong etc., American Institute of Physics, 2008,92:091113.People such as Dengfeng Tan utilize the blockage effect of polymer, have realized the unsettled polymer nano rice noodles of 15nm live width between the cuboid of processing in advance, see Appl.Phys.Lett., Dengfeng Tan etc., American Institute of Physics, 2007,90:071106.Above-mentioned relevant the last single beam that all adopts of breaking through diffraction limit is processed, the method for still needing and will be a kind of can accurately control machining resolution and machining accuracy.
In order further to improve machining resolution, some scientists propose to utilize beam of laser to cause photopolymerization reaction, the zone that another Shu Jiguang restriction reacts, and only make exciting light focus center place and material reaction, greatly quantum jump diffraction limit.The wavelength 473nm laser excitation free radical that human all solid state lasers such as Timothy F.Scott produce causes photopolymerization reaction, with near the free radical the wavelength 365nm laser consumption exciting light focus of another bundle argon ion laser generation, thereby conversion zone is limited in the minimum scope of exciting light focus, obtained the following machining resolution of diffraction limit, see Science, Timothy F.Scott etc., 2009,324 (5929), 913.The wavelength that people such as Linjie Li utilize femtosecond pulse laser to produce is 800nm, pulse width is that the near-infrared laser of 200fs passes through the photopolymerization of biphotonic process atarting material, utilize another to restraint same wavelength, pulse width is that the pulse laser of 50ps suppresses near the extent of reaction of exciting light focus by the single photon process, has obtained the machining resolution of vertical 40nm, sees Science, Linjie Li etc., 2009,324 (5929), 910.People such as Trisha L.Andrew cover one deck photochromic films on photoresist, this film makes the laser of the 325nm wavelength that helium cadmium laser produces see through, and the zone of the laser action of the 633nm wavelength that produces at He-Ne laser absorbs the laser of 325nm wavelength, and utilize the Lloyd's mirror interference instrument to make the interference fringe of two-beam light and dark, only make the 325nm wavelength laser in the very small region see through photochromic films and light-sensitive material effect, obtained the machining resolution of horizontal 36nm, see Science, Trisha L.Andrew etc., 2009,324 (5929), 917.Yet above-mentioned technology only limits to can process by the material of optical excitation and excitation state light intensity system cancellation characteristic having, and is difficult to the material of other types is processed.
Therefore, need a kind of wavelength that is complementary by selection and light-sensitive material absorption characteristic to be processed accurately to control the machining resolution of light-sensitive material to be processed and the laser micro-nano system of processing and the method for machining accuracy.
Summary of the invention
The purpose of this invention is to provide laser micro-nano processing method and system that a kind of machining resolution and machining accuracy can accurately be controlled.The laser beam that has a wavelength that the absorption characteristic with light-sensitive material to be processed is complementary by utilization is realized the processing of multiple functional material, expansion micro-nano material processed scope.
The invention provides a kind of laser micro-nano system of processing, this system comprises:
LASER Light Source is used to provide first laser beam with first wavelength and second laser beam with second wavelength, and the pulse width of first laser beam and second laser beam is respectively from nanosecond to the femtosecond scope and first wavelength is different from second wavelength;
The time difference that optical delay assembly, the light path that is used to regulate first laser beam or second laser beam make win laser beam and second laser beam arrive focus is not more than the life time of the level that light-sensitive material to be processed is excited to excitation state;
The optical focus assembly is used for first laser beam and second laser beam are focused on same focus; With
Computer-controlled little travelling carriage, the light-sensitive material that is used for placing on it is adjusted to described focus.
Preferably, the repetition rate of described first laser beam and described second laser beam is 1Hz-100MHz, and the wavelength regulation scope is 157nm-1064nm, and polarization state is linear polarization, circular polarization or elliptical polarization.
Preferably, described LASER Light Source comprises first laser instrument that first laser beam is provided and second laser instrument that second laser beam is provided.
Preferably, described LASER Light Source comprises:
Be used to provide first laser instrument of first laser beam,
Be used for first laser beam beam splitter divided into two parts,
Frequency multiplier, be used for one of two parts first laser beam form frequency be the first laser beam frequency frequency multiplication second laser beam and
Be used for seeing through the wave filter of second laser beam.
Preferably, further comprise the optical attenuator that is used to regulate the optical gate of time for exposure and is used to regulate exposure energy according to system of the present invention.
Preferably, described optical delay assembly comprises four speculums that are positioned on the little mobile platform of one dimension, by regulating the light path that the little travelling carriage of this one dimension changes described first laser beam or second laser beam.
Preferably, described optical delay assembly comprises two right-angle prisms that are positioned on the little mobile platform of one dimension, by regulating the light path that the little travelling carriage of this one dimension changes described first laser beam or second laser beam.
Preferably, the moving range of the little travelling carriage of described one dimension is 0.1 μ m-1m.
Preferably, described optical focus assembly comprises;
Respectively first laser beam and second laser beam are expanded the extender lens of bundle,
Be used for first laser beam and second laser beam be superposed to the dichroscope of the stack laser beam of advancing along same light path and speculum and
Be used for object lens with the focusing of stack laser beam.
Preferably, described object lens are dry object lens, water immersion objective or oil immersion objective.
Preferably, laser micro-nano system of processing of the present invention further comprises:
Be used to change first wave plate of the polarization state of first laser beam;
Be used to change second wave plate of the polarization state of second laser beam.
Preferably, described computer-controlled little travelling carriage is three-dimensional little travelling carriage, and three-dimensional little travelling carriage is 1nm-200mm at x, y and z direction moving range.
The invention provides a kind of laser micro-nano processing method, this method may further comprise the steps:
Regulate LASER Light Source, first laser beam and second laser beam of LASER Light Source output are adjusted to first wavelength and second wavelength that can make light-sensitive material to be processed produce two-photon effect respectively, the pulse width of first laser beam and second laser beam is respectively from nanosecond to the femtosecond scope and first wavelength is different from second wavelength
Regulate the light path of first laser beam or second laser beam, the time difference that makes win laser beam and second laser beam arrive this light-sensitive material is not more than the life time of the level that this light-sensitive material is excited to excitation state,
First laser beam and second laser beam are focused on same focus, and
Regulate little travelling carriage, make the light-sensitive material on little travelling carriage be positioned at described focus to carry out micro-nano processing.
Preferably, the time for exposure of regulating described first laser beam and second laser beam respectively is 1ms-10min, and the exposure energy of regulating described first laser beam and second laser beam respectively is to act on average laser power on the light-sensitive material at 0.1 μ W-1W.
Preferably, described light-sensitive material is selected from organic photosensitive material, inorganic light-sensitive material and contains the light-sensitive material of metal ion.
Preferably, described organic photosensitive material is selected from organic material, the organic material that photolysis reactions can take place that photopolymerization reaction can take place, contains the organic material that the photo-crosslinking molecule can take place and contain the organic material that the photoisomerization reaction molecular can take place.
Preferably, described inorganic light-sensitive material is selected from inorganic material, the inorganic material that photolysis reactions can take place that photopolymerization reaction can take place, contains inorganic material that the photo-crosslinking molecule can take place, contains the inorganic material that the photoreduction molecule can take place and contain the inorganic material that the photooxidation reaction molecule can take place.
Preferably, the described light-sensitive material that contains metal ion is selected from the inorganic material, the organic material that contains the metal ion that the photoreduction molecule can take place that contain the metal ion that the photoreduction molecule can take place, contains the inorganic material that the photooxidation reaction molecule can take place and contain the organic material that the photooxidation reaction molecule can take place.
Superiority of the present invention:
1. system and method for the present invention makes two bundle laser implementation space and temporal stacks, can carry out the processing of nanoscale in light-sensitive material, obtains to be higher than the machining resolution with single beam laser Shu Jiagong.
2. method of the present invention can accurately be controlled machining resolution and machining accuracy by regulating the exposure energy and the time for exposure of two-beam and light-sensitive material effect respectively.
3. method of the present invention can be expanded the rapidoprint scope by selecting the characteristic coupling of used Wavelength of Laser and different materials, realizes the processing of multiple functional material.
Description of drawings
Fig. 1 illustrates the two bundle laser beams calculating surfaces of intensity distribution that focus on same focus place and a branch of 800nm laser beam is focused on the focus place that wavelength are respectively 800nm and 500nm;
Fig. 2 illustrates the two bundle laser beams calculating surfaces of intensity distribution that focus on same focus place and a branch of 800nm laser beam is focused on the focus place that wavelength are respectively 800nm and 400nm;
Fig. 3 is the schematic diagram of laser-processing system according to an embodiment of the invention;
Fig. 4 is the schematic diagram of laser-processing system according to another embodiment of the present invention;
Fig. 5 is the schematic diagram of the optical delay assembly of one embodiment of the invention;
Fig. 6 is the schematic diagram of the optical delay assembly of another embodiment of the present invention;
Fig. 7 uses 800nm single beam laser (a) respectively for the system that uses Fig. 3 and with the electron scanning micrograph of the linear array structure of stack laser beam (b) acquisition of 800nm and 400nm double beams laser;
Fig. 8 is the electron scanning micrograph of the unsettled line structure of system's acquisition of use Fig. 3;
Fig. 9 uses 800nm single beam laser (a) respectively for the system that uses Fig. 3 and with the electron scanning micrograph of the two-dimensional lattice array structure of stack laser beam (b) acquisition of 800nm and 400nm double beams laser;
Figure 10 is the electron scanning micrograph of the congruent point of the systems produce of use Fig. 3.
Among the figure,
1, first pulse laser; 2, second pulse laser; 3, semi-transparent semi-reflecting lens;
4, first speculum; 5, frequency-doubling crystal; 6, wave filter;
7, first optical gate; 8, second optical gate; 9, optical delay assembly;
10, first lens; 11, second lens; 12, the 3rd lens;
13, the 4th lens; 14, first wave plate; 15, second wave plate;
16, the first smooth fader; 17, the second smooth fader;
18, dichroscope; 19, second speculum; 20, object lens;
21, three-dimensional little travelling carriage of computer manipulation; 22, the little mobile platform of one dimension;
23, the 3rd speculum; 24, the 4th speculum; 25, the 5th speculum;
26, the 6th speculum; 27, first right-angle prism; 28, second right-angle prism;
The specific embodiment
The present invention will be described in conjunction with the preferred embodiment of the present invention below with reference to accompanying drawings.Should be appreciated that in the following description, provide many concrete details for example to the explanation of optical element so that to the overall understanding of the embodiment of the invention.Yet, it should be understood by one skilled in the art that the present invention is not only applicable to one or more concrete descriptions, and be applicable to other structural detail, wavelength and material etc.The hereinafter cited embodiment of specification is illustrative and not restrictive.
Two bundle different wavelength of laser are superposeed and the laser beam of stack are acted on same focus, the light distribution at this focus place by this two bundles laser in the decision of the product of the intensity distribution function at focus place.The full width at half maximum (FWHM) of the intensity distribution function by relatively characterizing the laser beam beam spot diameter,, the FWHM of the intensity distribution function product of the laser beam that superposes as can be seen is less than the FWHM of the light intensity of traditional employing beam of laser square.Therefore, use acts on the light-sensitive material with two-photon absorption effect by the stack laser beam that the two bundle different wavelength of laser that superpose obtain, and can realize being higher than the high-resolution micro-nano processing that acts on the resolution ratio of this light-sensitive material with two-photon absorption effect with the single beam laser bundle.To make a concrete analysis of stack light beam that two bundle different wavelength of laser bundles stacks obtain below in the intensity distribution function at same focus place and the relation between this intensity distribution function and the machining resolution.
According to the Debye method, see J.Stamners, Waves in Focal Regions, Adam Hilger, Bristol, 1986, be that λ, polarization direction are that the light of φ is that intensity distribution function after the object lens of α focus on is by angular aperture for a branch of wavelength:
(formula 1)
Wherein,
(formula 1-1)
(formula 1-2)
(formula 1-3)
In the formula, u and v are respectively optical coordinates, u=znk sin
2α, v=rnk sin α;
K=2 π/λ,
NA is a numerical aperture of objective, and n is the refractive index of material to be processed; J
0, J
1, J
2Be a class Bessel function; φ=0 or pi/2 refer to that respectively the polarization direction of laser is x and y.
As can be seen from the above equation, laser beam wavelength λ difference, the polarization direction difference, its intensity distribution function is then different.Focus on same focus for two bundle different wavelength of laser by same object lens, need to calculate respectively intensity distribution function I separately
1And I
2, do product again and calculate of the light distribution of stack light beam in focus.
With the λ that will propagate along the z direction
1First laser and the λ of=800nm
2Second laser of=500nm is focused on by the object lens of NA=1.45 in the material of refractive index n=1.515 and is example, calculates the intensity distribution function I transverse to the laser propagation direction at focus place
1With I
2Product, resulting result is as shown in Figure 1.
Among Fig. 1, I1, I2 represent the laser intensity of 800nm laser and 500nm laser respectively, and Ix and Iy represent that respectively used laser is the linearly polarized light along x and y direction polarization.From the full width at half maximum (FWHM) of light distribution as can be seen two bundle different wave length laser are superposeed the stack laser beam that forms at the FWHM of the intensity distribution function product of focus less than the FWHM of a branch of 800nm laser beam at the intensity distribution function of focus square, and the polarization direction of laser is also influential to FWHM.
With the λ that will propagate along the z direction
1First laser and the λ of=800nm
2Second laser of=400nm is focused on by the object lens of NA=1.45 in the material of refractive index n=1.515 and is example, and the light intensity of calculating the focus place is at the distribution function I transverse to the laser propagation direction
1With I
2Product, resulting result is as shown in Figure 2.
Among Fig. 2, I1, I2 represent the laser intensity of 800nm and 400nm respectively, and Ix and Iy represent that respectively used laser is the linearly polarized light along x and y direction polarization.From the FWHM of light distribution as can be seen two bundle different wave length laser are superposeed the stack laser beam that forms at the FWHM of the intensity distribution function product of focus less than the FWHM of a branch of 800nm laser beam at the intensity distribution function of focus square, and the polarization direction of laser is also influential to FWHM.
By formula 1 and result of calculation illustrated in figures 1 and 2 as can be known, focus on the beam spot diameter, that the diameter of the bundle spot that same focus forms forms less than traditional two-photon effect that utilizes beam of laser by two bundle laser of different wave length.In other words, when with the two stack light beams of restrainting the formation of different wavelength of laser bundles the light-sensitive material with two-photon absorption effect being added man-hour, its resolution ratio will be higher than the resolution ratio that traditional two-photon effect that utilizes single beam laser is processed.Further, by regulating the polarization direction of two bundle laser beams respectively, can further improve machining resolution.
Below in conjunction with preferred embodiment laser micro-nano system of processing of the present invention is further detailed.
Fig. 3 shows the schematic diagram of laser micro-nano system of processing according to an embodiment of the invention.This laser micro-nano system of processing 100 comprises: laser instrument 1, and semi-transparent semi-reflecting lens 3, frequency multiplier, for example frequency-doubling crystal 5, optical delay assembly 9, optical focus assembly and travelling carriage 21.Laser instrument 1 is used to produce pulse width and is the pulse laser from nanosecond to the femtosecond scope.On the output light path of laser instrument 1, place semi-transparent semi-reflecting lens 3 and be used to form transmitted light and reverberation.Transmitted light path upper edge main shaft is placed frequency-doubling crystal 5 and wave filter 6 successively.Wave filter 6 is used for the frequency multiplication light beam is carried out filtering, and the energy of double-frequency laser is not less than 99.5% with the ratio of wave filter output energy in its output energy.System 100 can comprise further that the lens 12,13 that are positioned on the transmission frequency doubled light path for example behind the wave filter are used for frequency doubled light is expanded bundle.Place speculum 4 at the reflected light path upper edge of semi-transparent semi-reflecting lens 3 main shaft and make reflection fundamental frequency light light path and transmission frequency doubled light light path parallel, thereafter placing optical delay assembly 9 and be used to regulate the time differences that light path makes two bundle laser beams arrive focuses and be not more than the life time of the level that light-sensitive material to be processed is excited to excitation state, is the lens 10 and 11 that are used for fundamental frequency light is expanded bundle after again.System 100 can further comprise the wave plate 15,14 that lays respectively on transmitted light path and the reflected light path, is used for regulating respectively the polarization state of laser on transmitted light path and the reflected light path.Described wave plate is preferably full-wave plate, half-wave plate and the quarter-wave plate that operation wavelength is a place light path optical maser wavelength.The optical focus assembly of system 100 for example comprises and is used for two bundle laser stacking are added as the dichroscope 18 and the speculum 19 of beam of laser, and the object lens 20 that are used for laser beam is focused on the light-sensitive material on the three-dimensional little travelling carriage 21 that is placed on the computer manipulation.Described object lens are preferably dry object lens, water immersion objective or oil immersion objective, and numerical aperture is 0.7-1.65, and multiplication factor is 10-100.Three-dimensional little travelling carriage that computer is handled is preferably 1nm-200mm at x, y and z direction moving range.System 100 can comprise further that laying respectively at being used on transmitted light path and the reflected light path regulates the optical gate 8,7 of time for exposure, and lays respectively at the optical attenuator 17,16 that is used to regulate exposure energy on transmitted light path and the reflected light path.Preferably, lens 10,11,12 and 13 focal length are respectively in the 1mm-500mm scope.Laser micro-nano system of processing according to the preferred embodiment, basic frequency laser bundle and double-frequency laser bundle are formed the stack laser beam of propagating along same light path, and the laser beam that should superpose focuses on same focus and is used for light-sensitive material to be processed is processed, and provides a kind of and with high-resolution and high manufacturing accuracy light-sensitive material carried out the micro-nano method for processing.
Fig. 4 shows the schematic diagram of laser micro-nano system of processing according to another embodiment of the present invention.Laser micro-nano system of processing 200 comprises: laser instrument 1, laser instrument 2, optical delay assembly 9, optical focus assembly and travelling carriage 21.Laser instrument 1 is used to produce the pulse width with first wavelength and is first pulse laser from nanosecond to the femtosecond scope.Semi-transparent semi-reflecting lens 3 shown in laser instrument 2 alternate figures 3, reflector 4, frequency-doubling crystal 5, wave filter 6 is used to produce the pulse width with second wavelength that is different from first wavelength and is second pulse laser from nanosecond to the femtosecond scope.In system 200, except that laser instrument 2, other structures of system are identical with system shown in Figure 3 100.
The present invention utilizes laser to carry out the micro-nano method for processing to carry out in system of the present invention, for example comprise the steps:
1) opens LASER Light Source, first laser beam and second laser beam are transferred to first wavelength and second wavelength that can make light-sensitive material generation two-photon effect to be processed respectively, the output mean power is in the 1mW-10W scope, and wavelength is built system of the present invention in the 157nm-1064nm scope.
2) regulate the light path of first laser beam or second laser beam, the time difference that makes win laser beam and second laser beam arrive this light-sensitive material is not more than the life time of the level that this light-sensitive material is excited to excitation state,
3) by the lens in the parallel main axis direction adjusting beam-expanding system, and the three-dimensional little travelling carriage that utilizes computer to handle makes two-beam focus on the same focal plane through object lens;
4) regulate speculum, semi-transparent semi-reflecting lens, right-angle prism and the dichroscope described in the system of the present invention, make two-beam focus on same point on the same focal plane through object lens.
5) light-sensitive material is placed on the sample platform on three-dimensional little travelling carriage that computer handles, polarization state by wave plate control laser, by the optical gate control time for exposure at 1ms-10 minute, by light fader control action for example in the average laser power on the light-sensitive material in 0.1 μ W-1W scope;
6) utilize the motion of the three-dimensional travelling carriage of computer manipulation to realize that the focus after the two-beam stack scans processing in light-sensitive material.
Obtain the structure of processing by last handling process: the resulting light-sensitive material after the two-beam effect of step 3) through washing, add technologies such as thermal decomposition, ablation, etching, development, is selected corresponding technological conditions according to the kind of material; Will be not do not carry out interactional light-sensitive material and partly remove obtaining the minus structure, or will carry out interactional light-sensitive material with light and partly remove to obtain the eurymeric structure with light.
In above-mentioned technical scheme, described light-sensitive material is organic photosensitive material, inorganic light-sensitive material or the light-sensitive material that contains metal ion.
In above-mentioned technical scheme, described organic photosensitive material for can take place photopolymerization reaction organic material, can take place photolysis reactions organic material, contain the organic material that the photo-crosslinking molecule can take place or contain the organic material that the photoisomerization reaction molecular can take place.
In above-mentioned technical scheme, described inorganic light-sensitive material for inorganic material, the inorganic material that photolysis reactions can take place that photopolymerization reaction can take place, contain inorganic material that the photo-crosslinking molecule can take place, contain the inorganic material that the photoreduction molecule can take place or contain the inorganic material that the photooxidation reaction molecule can take place.
In above-mentioned technical scheme, the described light-sensitive material that contains metal ion is the inorganic material, the organic material that contains the metal ion that the photoreduction molecule can take place that contain the metal ion that the photoreduction molecule can take place, contain inorganic material that the photooxidation reaction molecule can take place, contain the organic material that the photooxidation reaction molecule can take place.
Below in conjunction with instantiation the high machining resolution that laser micro-nano system of processing and method according to the present invention are obtained is described.
Example 1
Below in conjunction with laser micro-nano system of processing according to the present invention, and utilize this system that the concrete implementation step of preparation linear array structure in the photoresist that is placed on the commodity SCR500 by name on the glass substrate is described in detail.
Laser micro-nano system of processing 100 comprises: laser instrument 1, semi-transparent semi-reflecting lens 3, frequency-doubling crystal 5, optical delay assembly 9, optical focus assembly and travelling carriage 21.Laser instrument 1 is for example selected titanium jewel femtosecond pulse laser for use, and its output wavelength is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is the laser beam of linear polarization.Be placed with the semi-transparent semi-reflecting lens of for example making of BK7 glass 3 on the output light path of titanium jewel femtosecond pulse laser 1, its saturating reflectivity for example is 7: 3, to form transmitted light and reverberation.Frequency multiplier on the transmitted light path for example comprises that what place successively along main shaft is the I type BBO frequency-doubling crystal 5 of 1mm and the interference filter 6 that filters the 800nm wavelength such as thickness.Transmitted light obtains the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm through behind the frequency-doubling crystal, and wherein the energy of 400nm wavelength laser is not less than 99.5% with the ratio of the energy of wave filter output laser.System 100 can comprise further that the focal length on the transmission path for example is that the lens 12 of 60mm and lens 13 that focal length is 150mm are used for frequency doubled light is expanded bundle as extender lens.Place the speculum of for example making 4 at the reflected light path upper edge of semi-transparent semi-reflecting lens 3 main shaft and make reflected light path and transmitted light light path parallel, place optical delay assembly 9 thereafter and be used to regulate light path and made for two time differences of restrainting laser beams arrival focuses be not more than the life time of the level that this light-sensitive material is excited to excitation state of BK7 glass.This optical delay assembly 9 for example comprises the little mobile platform 22 of one dimension and four speculums of making of BK7 glass 23,24,25 and 26, as shown in Figure 5.For example place behind the optical delay assembly that focal length is the lens 10 of 35mm and the lens 11 that focal length is 150mm, be used for fundamental frequency light is expanded bundle.Thereafter place the half-wave plate 14 that operation wavelength equals 800nm, its optical axis direction is consistent with fundamental frequency polarisation of light direction.The optical focus assembly comprises that the dichroscope 18 made of BK7 glass and the speculum 19 with the making of BK7 glass after the frequency multiplication light path are combined into one the tunnel with two-beam, and the numerical aperture by thereafter is 1.45, multiplication factor is 100 times oil immersion objective 20, focuses on the light-sensitive material inside that is placed on three-dimensional little travelling carriage 21 that computer handles.Regulating for example three-dimensional little travelling carriage 21 that computer handles makes focus after the two-beam stack on the interface of glass substrate and light-sensitive material and its movement velocity is set is 10nm/ms.It is 2.3 μ W that adjusting light fader 17 makes the mean power of 400nm wavelength light, regulate light fader 16 makes the mean power of 800nm wavelength light in 14.91mW～11.19mW range, in light-sensitive material, expose, to not carry out interactional light-sensitive material with light with ethanol solution and partly remove, the linear array structure that obtains on glass basic surface is shown in Fig. 7 (b).Among Fig. 7 (b) in the linear array structure from left to right the mean power of the 800nm wavelength laser of each line be followed successively by 14.91mW, 14.50mW, 14.09mW, 13.73mW, 13.36mW, 13.02mW, 12.68mW, 12.36mW, 12.06mW, 11.77mW, 11.48mW and 11.19mW.As can be seen, under the situation that keeps 400nm wavelength laser bundle working power to remain unchanged,, can improve the machining resolution of light-sensitive material by reducing 800nm wavelength laser bundle working power.This example is can obtain the line structure of machining resolution less than 100nm under the mean power 11.19mW processing conditions of 2.3 μ W, 800nm wavelength laser in the mean power of 400nm wavelength laser.
Comparative Examples 1
To above-mentioned example 1, only light-sensitive material is exposed with 800nm single beam laser bundle, it is identical that other experiment conditions keep, and obtains contrast and experiment.It is 0W that adjusting light fader 17 makes the power of 400nm wavelength light, regulate light fader 16 makes the mean power of 800nm wavelength light in 14.91mW～13.36mW range, in light-sensitive material, expose, to not carry out interactional light-sensitive material with light with ethanol solution and partly remove, the linear array structure that obtains on glass basic surface is shown in Fig. 7 (a).Among Fig. 7 (a) in the linear array structure from left to right the mean power of the 800nm wavelength laser of each line be followed successively by 14.91mW, 14.50mW, 14.09mW, 13.73mW, 13.36mW.Further reduce laser power, can not obtain required line structure.This example can obtain the line structure that machining resolution is 120nm under the mean power 13.36mW of 800nm wavelength laser processing conditions.
As can be seen, employing obtains machining resolution less than 100nm according to laser micro-nano system of processing of the present invention and method by the working power that changes 800nm laser, be better than the 120nm resolution ratio of utilizing traditional a branch of 800nm laser to obtain, and be lower than the machining energy that uses the single beam laser bundle according to the machining energies that use two bundle laser beams.
Example 2
Below in conjunction with 3 pairs of systems of the present invention of accompanying drawing, and utilize the concrete implementation step of the unsettled line structure of preparation in the photoresist of the commodity of this system on being placed on glass substrate SCR500 by name to be described in detail:
This system comprises: laser instrument 1 is selected titanium jewel femtosecond pulse laser for use, and the output wavelength of this laser instrument 1 is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is a linear polarization; At first open titanium jewel femtosecond pulse laser 1, place a semi-transparent semi-reflecting lens 3 of making of BK7 glass on the output light path, saturating reflectivity is 7: 3; Obtain the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm at the transmitted light path upper edge main shaft I type BBO frequency-doubling crystal 5 that to place a thickness successively be 1mm and an interference filter 6 that filters the 800nm wavelength, and be that the lens 12 of 60mm and lens 13 that focal length is 150mm expand bundle with frequency doubled light by focal length; Place a speculum 4 of making of BK7 glass at the reflected light path upper edge of semi-transparent semi-reflecting lens 3 main shaft and make itself and another light path parallel, place by the little mobile platform 22 of one dimension and two right-angle prisms of making of BK7 glass 27 and 28 and form optical delay assembly 9 thereafter, as shown in Figure 6, and be that the lens 10 of 35mm and lens 11 that focal length is 150mm expand bundle with fundamental frequency light by focal length, thereafter placing operation wavelength is the half-wave plate 14 of 800nm, and its optical axis direction is consistent with fundamental frequency polarisation of light direction; Speculum that utilization is made of BK7 glass one that places after the fundamental frequency light path dichroscope of making of BK7 glass 18 and of placing after the frequency multiplication light path 19 is combined into one the tunnel with two-beam, and the numerical aperture by thereafter is 1.45, multiplication factor is 100 times oil immersion objective 20, focuses on the light-sensitive material inside that is placed on three-dimensional little travelling carriage 21 that computer handles; The movement velocity that three-dimensional little travelling carriage 21 of computer manipulation is set is 170nm/ms, regulating light fader 16 and 17, to make the mean power of 400nm wavelength light be that the mean power of 2.5 μ W, 800nm wavelength light is 12.23mW, in light-sensitive material, expose, to not carry out interactional light-sensitive material with light with ethanol solution partly removes, the spacing of processing in advance be the unsettled line structure that obtains between the cuboid of 1 μ m as shown in Figure 8, resolution ratio is less than 25nm.
Example 3
To system of the present invention, and utilize the concrete implementation step of preparation two-dimensional lattice array structure in the photoresist of the commodity of this system on being placed on glass substrate SCR500 by name to be described in detail below in conjunction with Fig. 3:
This system comprises: laser instrument 1 is selected titanium jewel femtosecond pulse laser for use, and the output wavelength of this laser instrument 1 is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is a linear polarization; At first open titanium jewel femtosecond pulse laser 1, place a semi-transparent semi-reflecting lens 3 of making of BK7 glass on the output light path, saturating reflectivity is 7: 3; Obtain the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm at the transmitted light path upper edge main shaft I type BBO frequency-doubling crystal 5 that to place a thickness successively be 1mm and an interference filter 6 that filters the 800nm wavelength, and be that the lens 12 of 60mm and lens 13 that focal length is 150mm expand bundle with frequency doubled light by focal length; Place a speculum 4 of making of BK7 glass at the reflected light path upper edge of semi-transparent semi-reflecting lens 3 main shaft and make itself and another light path parallel, place by the little mobile platform 22 of one dimension and four speculums of making of BK7 glass and form optical delay assembly 9 thereafter, and be that the lens 10 of 35mm and lens 11 that focal length is 150mm expand bundle with fundamental frequency light by focal length, thereafter placing operation wavelength is the half-wave plate 14 of 800nm, and its optical axis direction and fundamental frequency polarisation of light angular separation are 45 °; Speculum that utilization is made of BK7 glass one that places after the frequency multiplication light path dichroscope of making of BK7 glass 18 and one one of placing after the fundamental frequency light path 19 is combined into one the tunnel with two-beam, and the numerical aperture by thereafter is 1.45, multiplication factor is 100 times oil immersion objective 20, focuses on the light-sensitive material inside that is placed on three-dimensional little travelling carriage 21 that computer handles; Regulating three-dimensional little travelling carriage 21 that computer handles makes focus after the two-beam stack on the interface of glass substrate and light-sensitive material; Regulating optical gate 7 and 8 makes the time for exposure of two-beam be 100ms.Regulating light fader 16 makes the mean power of 400nm wavelength light make the mean power of 800nm wavelength light in 15.02mW～10.34mW range at 4.2 μ W～6.0 μ W range, adjusting light fader 16, in light-sensitive material, expose, to not carry out interactional light-sensitive material with light with ethanol solution and partly remove, the two-dimensional lattice array structure that obtains on glass basic surface is shown in Fig. 9 (b).Among Fig. 9 (b), keep the mean power of 400nm wavelength constant from left to right, the mean power of regulating the 800nm wavelength laser is followed successively by 15.02mW, 14.12mW, 13.20mW, 12.34mW, 11.50mW, 10.84mW, 10.34mW; Keep the mean power of 800nm wavelength constant from top to bottom, the mean power of regulating the 400nm wavelength laser is followed successively by 6.0 μ W, 5.8 μ W, 5.6 μ W, 5.4 μ W, 5.2 μ W, 5.0 μ W, 4.8 μ W, 4.6 μ W.This example can obtain resolution ratio less than 130nm at the mean power 4.6 μ W of 400nm wavelength laser under the mean power 10.84mW processing conditions of 800nm wavelength laser.
Comparative Examples 3
To above-mentioned example 3, only light-sensitive material is exposed with 800nm single beam laser bundle, it is identical that other experiment conditions keep, and obtains contrast and experiment.It is 0W that adjusting light fader 17 makes the power of 400nm wavelength light, regulate light fader 16 makes the mean power of 800nm wavelength light in 15.02mW～13.20mW range, in light-sensitive material, expose, to not carry out interactional light-sensitive material with light with ethanol solution and partly remove, the lattice array structure that obtains on glass basic surface is shown in Fig. 9 (a).The mean power of 800nm wavelength laser is followed successively by 15.02mW, 14.12mW, 13.20mW among Fig. 9 (a), and obtaining machining resolution under the 13.20mW mean power is 155nm.When the laser beam of use 800nm is lower than the 13.20mW mean power, can't obtain dot structure.
As can be seen, employing according to laser micro-nano system of processing of the present invention and method by changing the working power of two bundle laser beams respectively, obtain machining resolution less than 130nm, be better than the 155nm resolution ratio of utilizing traditional a branch of 800nm laser to obtain, and be lower than the machining energy that uses the single beam laser bundle according to the machining energies that use two bundle laser beams.
Example 4
To system of the present invention, and utilize the concrete implementation step of preparation congruent point in the photoresist of the commodity of this system on being placed on glass substrate SCR500 by name to be described in detail below in conjunction with accompanying drawing:
This system comprises: laser instrument 1 is selected titanium jewel femtosecond pulse laser for use, and the output wavelength of this laser instrument 1 is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is a linear polarization; At first open titanium jewel femtosecond pulse laser 1, place a semi-transparent semi-reflecting lens 3 of making of BK7 glass on the output light path, saturating reflectivity is 7: 3; Obtain the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm at the transmitted light path upper edge main shaft I type BBO frequency-doubling crystal 5 that to place a thickness successively be 1mm and an interference filter 6 that filters the 800nm wavelength, and be that the lens 12 of 60mm and lens 13 that focal length is 150mm expand bundle with frequency doubled light by focal length; Place a speculum 4 of making of BK7 glass at the reflected light path upper edge of semi-transparent semi-reflecting lens 3 main shaft and make itself and another light path parallel, place by the little mobile platform 22 of one dimension and four speculums of making of BK7 glass and form optical delay assembly 9 thereafter, and be that the lens 10 of 35mm and lens 11 that focal length is 150mm expand bundle with fundamental frequency light by focal length, thereafter placing operation wavelength is the half-wave plate 14 of 800nm, regulates the polarization direction angle that its optical axis direction makes fundamental frequency light and frequency doubled light and is respectively 0 °, 45 ° and 90 °; Speculum that utilization is made of BK7 glass one that places after the frequency multiplication light path dichroscope of making of BK7 glass 18 and one one of placing after the fundamental frequency light path 19 is combined into one the tunnel with two-beam, and the numerical aperture by thereafter is 1.45, multiplication factor is 100 times oil immersion objective 20, focuses on the light-sensitive material inside that is placed on three-dimensional little travelling carriage 21 that computer handles; Regulating three-dimensional little travelling carriage 21 that computer handles makes focus after the two-beam stack on the interface of glass substrate and light-sensitive material; Regulating optical gate 7 and 8 makes the time for exposure of two-beam be 100ms, it is 5.8 μ W that adjusting light fader 16 and 17 makes the mean power of 400nm wavelength light, the mean power of 800nm wavelength light is respectively 12.34mW, 13.20mW and 11.79mW for described three kinds of polarization directions, in light-sensitive material, expose, to not carry out interactional light-sensitive material with light with ethanol solution partly removes, the congruent point that on glass basic surface, obtains as shown in figure 10, resolution ratio is less than 135nm.This shows,, can improve machining accuracy according to the laser-processing system of the embodiment of the invention by changing the polarization direction of laser beam.
Though explanation and described the present invention in the context of the embodiment of limited quantity here can be implemented the present invention in a variety of forms within the spirit that does not break away from essential characteristic of the present invention.Therefore, generally say, illustrate and the embodiment that describes will think as an illustration but not as restriction.For example, just can provide above-mentioned detailed explanation according to adjusting the time for exposure.Yet above-mentioned technology can be applied to gain control in the same manner.For example replace increasing or reducing light exposure, can increase or reduce amount of gain similarly.In addition, can increase or reduce the quantity of time for exposure and gain as required.Therefore, additional claims and not only represent scope of the present invention by the specification of front wish will comprise all variations within this meaning that is equal to by claims and scope.
The present invention obtains country's 973 plans (2010CB934103) and subsidizes.
Claims (26)
1. laser micro-nano system of processing comprises:
LASER Light Source is used to provide first laser beam with first wavelength and second laser beam with second wavelength, and the pulse width of first laser beam and second laser beam is respectively from nanosecond to the femtosecond scope and first wavelength is different from second wavelength;
The time difference that optical delay assembly, the light path that is used to regulate first laser beam or second laser beam make win laser beam and second laser beam arrive focus is not more than the life time of the level that light-sensitive material to be processed is excited to excitation state;
The optical focus assembly is used for first laser beam and second laser beam are focused on same focus; With
Computer-controlled little travelling carriage, the light-sensitive material that is used for placing on it is adjusted to described focus.
2. laser micro-nano system of processing according to claim 1, it is characterized in that, the repetition rate of described first laser beam and described second laser beam is 1Hz-100MHz, and the wavelength regulation scope is 157nm-1064nm, and polarization state is linear polarization, circular polarization or elliptical polarization.
3. laser micro-nano system of processing according to claim 1 is characterized in that, described LASER Light Source comprises first laser instrument that first laser beam is provided and second laser instrument that second laser beam is provided.
4. laser micro-nano system of processing according to claim 1 is characterized in that described LASER Light Source comprises:
Be used to provide first laser instrument of first laser beam,
Be used for first laser beam beam splitter divided into two parts,
Frequency multiplier, be used for one of two parts first laser beam form frequency be the first laser beam frequency frequency multiplication second laser beam and
Be used for seeing through the wave filter of second laser beam.
5. laser micro-nano system of processing according to claim 1 further comprises the optical attenuator that is used to regulate the optical gate of time for exposure and is used to regulate exposure energy.
6. laser micro-nano system of processing according to claim 1, it is characterized in that, described optical delay assembly comprises four speculums that are positioned on the little mobile platform of one dimension, by regulating the light path that the little travelling carriage of this one dimension changes described first laser beam or second laser beam.
7. laser micro-nano system of processing according to claim 1, it is characterized in that, described optical delay assembly comprises two right-angle prisms that are positioned on the little mobile platform of one dimension, by regulating the light path that the little travelling carriage of this one dimension changes described first laser beam or second laser beam.
8. according to claim 6 or 7 described laser micro-nano systems of processing, it is characterized in that the moving range of the little travelling carriage of described one dimension is 0.1 μ m-1m.
9. laser micro-nano system of processing according to claim 1 is characterized in that described optical focus assembly comprises;
Respectively first laser beam and second laser beam are expanded the extender lens of bundle,
Be used for first laser beam and second laser beam be superposed to the dichroscope of the stack laser beam of advancing along same light path and speculum and
Be used for object lens with the focusing of stack laser beam.
10. laser micro-nano system of processing according to claim 9 is characterized in that described object lens are dry object lens, water immersion objective or oil immersion objective.
11. laser micro-nano system of processing according to claim 1 further comprises:
Be used to change first wave plate of the polarization state of first laser beam;
Be used to change second wave plate of the polarization state of second laser beam.
12. laser micro-nano system of processing according to claim 1 is characterized in that, described computer-controlled little travelling carriage is three-dimensional little travelling carriage, and three-dimensional little travelling carriage is 1nm-200mm at x, y and z direction moving range.
13. laser micro-nano system of processing according to claim 1 comprises:
Pulse laser is used to produce first laser beam with first wavelength,
Semi-transparent semi-reflecting lens is used for first laser beam is divided into first laser beam of advancing along first light path and second laser beam of advancing along second light path,
Be positioned in order and be used for first speculum, first optical gate, optical delay assembly, first lens, second lens, first wave plate and the first smooth fader on first light path,
Be positioned at frequency-doubling crystal, wave filter, second optical gate, the 3rd lens, the 4th lens, second wave plate and the second smooth fader on second light path in order,
Be used for first laser beam and second laser beam are focused to dichroscope, second speculum and the object lens of same focus, and
The little travelling carriage of computer-controlled three-dimensional.
14. laser micro-nano system of processing according to claim 1 is characterized in that, described light-sensitive material is selected from organic photosensitive material, inorganic light-sensitive material and contains the light-sensitive material of metal ion.
15. laser micro-nano system of processing according to claim 14, it is characterized in that described organic photosensitive material is selected from organic material, the organic material that photolysis reactions can take place that photopolymerization reaction can take place, contains the organic material that the photo-crosslinking molecule can take place and contain the organic material that the photoisomerization reaction molecular can take place.
16. laser micro-nano system of processing according to claim 14, it is characterized in that described inorganic light-sensitive material is selected from inorganic material, the inorganic material that photolysis reactions can take place that photopolymerization reaction can take place, contain inorganic material that the photo-crosslinking molecule can take place, contain the inorganic material that the photoreduction molecule can take place and contain the inorganic material that the photooxidation reaction molecule can take place.
17. laser micro-nano system of processing according to claim 14, it is characterized in that the described light-sensitive material that contains metal ion is selected from the inorganic material, the organic material that contains the metal ion that the photoreduction molecule can take place that contain the metal ion that the photoreduction molecule can take place, contains the inorganic material that the photooxidation reaction molecule can take place and contain the organic material that the photooxidation reaction molecule can take place.
18. a laser micro-nano processing method is characterized in that, this method may further comprise the steps:
Regulate LASER Light Source, first laser beam and second laser beam of LASER Light Source output are adjusted to first wavelength and second wavelength that can make light-sensitive material to be processed produce two-photon effect respectively, the pulse width of first laser beam and second laser beam is respectively from nanosecond to the femtosecond scope and first wavelength is different from second wavelength
Regulate the light path of first laser beam or second laser beam, the time difference that makes win laser beam and second laser beam arrive this light-sensitive material is not more than the life time of the level that this light-sensitive material is excited to excitation state,
First laser beam and second laser beam are focused on same focus, and
Regulate little travelling carriage, make the light-sensitive material on little travelling carriage be positioned at described focus to carry out micro-nano processing.
19. laser micro-nano processing method according to claim 18, it is characterized in that, the repetition rate of described first laser beam and described second laser beam is 1Hz-100MHz, and the wavelength regulation scope is 157nm-1064nm, and polarization state is linear polarization, circular polarization or elliptical polarization.
20. laser micro-nano processing method according to claim 18 is characterized in that, describedly first laser beam and second laser beam are focused on same focus further comprises:
Respectively described first laser beam and described second laser beam are expanded bundle;
Second laser beam stack with after expanding first laser beam after restrainting and expanding bundle obtains the stack laser beam of advancing along same light path;
The laser beam that will superpose focuses on same focus, and the described light-sensitive material at focusing place is processed.
21. laser micro-nano processing method according to claim 18 further may further comprise the steps:
Be positioned at the first laser beam light path and be positioned at the time for exposure that optical gate on the second laser beam light path changes first laser beam and second laser beam by regulating respectively; With
Be positioned at the first laser beam light path and be positioned at the exposure energy that optical attenuator on the second laser beam light path changes first laser beam and second laser beam by regulating respectively.
22. laser micro-nano processing method according to claim 18, it is characterized in that, the time for exposure of regulating described first laser beam and second laser beam respectively is 1ms-10min, and the exposure energy of regulating described first laser beam and second laser beam respectively is to act on average laser power on the light-sensitive material at 0.1 μ W-1W.
23. laser micro-nano processing method according to claim 18 is characterized in that, described light-sensitive material is selected from organic photosensitive material, inorganic light-sensitive material and contains the light-sensitive material of metal ion.
24. laser micro-nano processing method according to claim 18, it is characterized in that described organic photosensitive material is selected from organic material, the organic material that photolysis reactions can take place that photopolymerization reaction can take place, contains the organic material that the photo-crosslinking molecule can take place and contain the organic material that the photoisomerization reaction molecular can take place.
25. laser micro-nano processing method according to claim 18, it is characterized in that described inorganic light-sensitive material is selected from inorganic material, the inorganic material that photolysis reactions can take place that photopolymerization reaction can take place, contain inorganic material that the photo-crosslinking molecule can take place, contain the inorganic material that the photoreduction molecule can take place and contain the inorganic material that the photooxidation reaction molecule can take place.
26. laser micro-nano processing method according to claim 18, it is characterized in that the described light-sensitive material that contains metal ion is selected from the inorganic material, the organic material that contains the metal ion that the photoreduction molecule can take place that contain the metal ion that the photoreduction molecule can take place, contains the inorganic material that the photooxidation reaction molecule can take place and contain the organic material that the photooxidation reaction molecule can take place.
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| CN201010290490.5A CN102000912B (en) | 2010-09-21 | 2010-09-21 | Laser micro/nano processing system and method |
| EP19214556.3A EP3650162B1 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano fabricating system and method of processing a metal ion solution |
| JP2013528496A JP5814371B2 (en) | 2010-09-21 | 2011-09-15 | Laser micro / nano processing method |
| EP11826307.8A EP2620249B1 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano processing system and method |
| PCT/CN2011/001567 WO2012037780A1 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano processing system and method |
| US13/824,634 US9187318B2 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano processing system and method |
| US14/930,856 US9636777B2 (en) | 2010-09-21 | 2015-11-03 | Laser micro/nano processing system and method |
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