CN101989042B - 多色调光掩模的制造方法及图案转印方法 - Google Patents

多色调光掩模的制造方法及图案转印方法 Download PDF

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Publication number
CN101989042B
CN101989042B CN2010102431916A CN201010243191A CN101989042B CN 101989042 B CN101989042 B CN 101989042B CN 2010102431916 A CN2010102431916 A CN 2010102431916A CN 201010243191 A CN201010243191 A CN 201010243191A CN 101989042 B CN101989042 B CN 101989042B
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China
Prior art keywords
transmitting part
light transmitting
film
resist
transmissivity
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CN2010102431916A
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Chinese (zh)
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CN101989042A (zh
Inventor
吉田光一郎
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Hoya Corp
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Hoya Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
CN2010102431916A 2009-07-29 2010-07-28 多色调光掩模的制造方法及图案转印方法 Active CN101989042B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009176725 2009-07-29
JP2009-176725 2009-07-29

Publications (2)

Publication Number Publication Date
CN101989042A CN101989042A (zh) 2011-03-23
CN101989042B true CN101989042B (zh) 2013-08-07

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CN2010102431916A Active CN101989042B (zh) 2009-07-29 2010-07-28 多色调光掩模的制造方法及图案转印方法

Country Status (4)

Country Link
JP (1) JP5545994B2 (ko)
KR (1) KR101140103B1 (ko)
CN (1) CN101989042B (ko)
TW (1) TWI428688B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111650820B (zh) * 2020-06-28 2022-06-17 上海华虹宏力半导体制造有限公司 确定光阻的适用条件的方法及所用的掩膜板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002247359A (ja) * 2001-02-15 2002-08-30 Dainippon Printing Co Ltd ハーフトーン処理方法および装置
JP2004039327A (ja) * 2002-07-01 2004-02-05 Nec Corp 携帯端末用キーボタンおよび携帯端末
CN1981244A (zh) * 2004-06-30 2007-06-13 集成方案株式会社 曝光装置
JP2007292822A (ja) * 2006-04-21 2007-11-08 Dainippon Printing Co Ltd 階調をもつフォトマスクの欠陥修正方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102004A (ja) * 1991-10-08 1993-04-23 Mitsubishi Electric Corp レジストパターン形成方法
WO2000045222A1 (fr) * 1999-01-27 2000-08-03 Citizen Watch Co., Ltd. Masque photolithographique et procede de fabrication de celui-ci
JP2001297997A (ja) * 2000-04-17 2001-10-26 Sony Corp 半導体装置の製造方法
JP4919220B2 (ja) * 2005-02-28 2012-04-18 Ｈｏｙａ株式会社 グレートーンマスク
JP4570632B2 (ja) * 2006-02-20 2010-10-27 Ｈｏｙａ株式会社 ４階調フォトマスクの製造方法、及びフォトマスクブランク加工品
TWI446105B (zh) * 2007-07-23 2014-07-21 Hoya Corp 光罩之製造方法、圖案轉印方法、光罩以及資料庫
JP2009128558A (ja) * 2007-11-22 2009-06-11 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002247359A (ja) * 2001-02-15 2002-08-30 Dainippon Printing Co Ltd ハーフトーン処理方法および装置
JP2004039327A (ja) * 2002-07-01 2004-02-05 Nec Corp 携帯端末用キーボタンおよび携帯端末
CN1981244A (zh) * 2004-06-30 2007-06-13 集成方案株式会社 曝光装置
JP2007292822A (ja) * 2006-04-21 2007-11-08 Dainippon Printing Co Ltd 階調をもつフォトマスクの欠陥修正方法

Also Published As

Publication number Publication date
TWI428688B (zh) 2014-03-01
JP5545994B2 (ja) 2014-07-09
KR101140103B1 (ko) 2012-04-30
TW201113632A (en) 2011-04-16
KR20110013287A (ko) 2011-02-09
CN101989042A (zh) 2011-03-23
JP2011048357A (ja) 2011-03-10

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Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1

Patentee after: HOYA Corporation

Address before: Tokyo, Japan, Japan

Patentee before: HOYA Corporation