CN101980390A - LED packaging process for conducting heat by using liquid metal - Google Patents

LED packaging process for conducting heat by using liquid metal Download PDF

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Publication number
CN101980390A
CN101980390A CN2010102804555A CN201010280455A CN101980390A CN 101980390 A CN101980390 A CN 101980390A CN 2010102804555 A CN2010102804555 A CN 2010102804555A CN 201010280455 A CN201010280455 A CN 201010280455A CN 101980390 A CN101980390 A CN 101980390A
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CN
China
Prior art keywords
led
led chip
pit
metal
liquid metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010102804555A
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Chinese (zh)
Inventor
黄金鹿
缪应明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Zhongze Optoelectronics Technology Co Ltd
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Suzhou Zhongze Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Zhongze Optoelectronics Technology Co Ltd filed Critical Suzhou Zhongze Optoelectronics Technology Co Ltd
Priority to CN2010102804555A priority Critical patent/CN101980390A/en
Publication of CN101980390A publication Critical patent/CN101980390A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses an LED (light-emitting diode) packaging process for conducting heat by using a liquid metal, which comprises the following steps of: preparing a packaging base with a pit by using a metal or a metal alloy, injecting a proper amount of liquid metal into the pit on the packaging base, then fixing an LED chip at the outlet of the pit to make the bottom layer of the LED chip directly contacted with the liquid metal, sealing the contacted part of the periphery of the LED chip and the pit of the packaging base by using sealant after primary crystal fixation, welding gold threads on the anode and the cathode of the LED chip after crystal fixation, connecting the other ends of the gold threads to the positive and negative electrodes of an LED light source, and finally performing filling and sealing by using a fluorescent powder glue layer. The liquid metal injected between the substrate layer of the LED chip and the packaging base in the packaging process realizes seamless butt joint between the LED chip and a heat conducting plate so that the heat emitted by an LED is quickly conducted, the junction temperature of the LED is effectively controlled, the service life of the LED is prolonged and the luminous efficiency of the LED is increased.

Description

A kind of LED packaging technology of utilizing liquid metals heat conduction
Technical field
The present invention relates to a kind of LED packaging technology, say it is a kind of LED packaging technology of utilizing liquid metals heat transfer heat conduction definitely.
Background technology
Along with manifesting day by day of the energy and environmental problem, energy-conservation industry and products thereof more and more comes into one's own, the energy-saving effect of semiconductor diode (LED) illumination is generally acknowledged, but LED is such as heat radiation, application bottlenecks such as luminous intensity distribution are not also fully well solved, particularly heat dissipation problem is particularly outstanding, as everyone knows, led chip light efficiency and life-span and its junction temperature present must dependency relation, be that the low more light efficiency of junction temperature is high more, the corresponding life-span is also just long more, the key technology of control LED junction temperature is a heat radiation heat conduction technology, its technological core is that the heat that earlier LED is sent effectively conducts to external heat sink fast, heat is dispersed in the surrounding enviroment through external heat sink, the factor of restriction LED heat conduction has heat transfer path and heat gradient, our desired temperature gradient is the smaller the better setting under the certain situation of external heat sink temperature, and being about to the LED junction temperature, to be controlled at low as far as possible be level, so a certain amount of heat transferred to be gone out just must design more reasonable, more effective heat transfer path.The heat transfer path of tradition led chip packaging technology is: led chip-crystal-bonding adhesive-heat sink-heat-conducting glue-radiator, the drawback of this passage maximum is to fit between led chip and metal heat sink not tight, there is the gap between the two, usually add crystal-bonding adhesive to fill up gap and fixed chip, and the conductive coefficient of existing crystal-bonding adhesive can not be comparable with metal, and also have very big thermal resistance between crystal-bonding adhesive and led chip and metal heat sink.
Summary of the invention
In order to overcome above-mentioned defective, the invention provides a kind of LED packaging technology of utilizing liquid metals heat conduction, contact the heat conduction of conducting heat by liquid metals and LED substrate layer are seamless.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of LED packaging technology of utilizing liquid metals heat conduction, the encapsulation base that at first has pit by the metal or metal alloy preparation, getting the appropriate amount of fluid metal injects on the encapsulation base in the pit, then led chip being fixed in the pit outlet makes the led chip substrate layer directly contact with liquid metals, carry out tentatively solid brilliant back in led chip periphery and base plate for packaging pit contact position fluid sealant encapsulation process, treat that solid brilliant back is at led chip both positive and negative polarity welding gold thread, the other end of gold thread is connected in the positive and negative electrode of led light source, is encapsulated by the embedding of fluorescent material glue-line at last.
Described LED encapsulation base is made by high-thermal conductive metal or alloy material, and pit is set on the metal base, simultaneously the metallic packaging pedestal can with the radiator integrated design.
Described liquid metals is a kind of metal or alloy that at room temperature is in a liquid state, and it is generally the alloy material of tin, magnesium, gallium, indium etc., can select the liquid metals material of suitable fusing point according to actual operating position.
Described fluorescent material glue-line is allocated by a certain percentage by fluorescent material and casting glue and is formed embedding and solidify behind the led chip surface and form.
Described fluid sealant is silica gel or resin glue.
Described led chip is a large-power light-emitting diodes.
The invention has the beneficial effects as follows: the heat transfer path of traditional led chip packaging technology is: led chip-crystal-bonding adhesive-heat sink-heat-conducting glue-radiator, the drawback of this passage maximum is to fit between led chip and metal heat sink not tight, there is the gap between the two, usually add crystal-bonding adhesive to fill up gap and fixed chip, and the conductive coefficient of existing crystal-bonding adhesive can not be comparable with metal, and also there is very big thermal resistance between crystal-bonding adhesive and led chip and metal heat sink, add liquid metals in the packaging technology of the present invention between led chip substrate layer and heat-conducting plate and can realize slitless connection between led chip and heat-conducting plate, thereby effectively improve fit between led chip and metal heat sink in the conventional package technology not tight, defectives such as the crystal-bonding adhesive heat conductivility is not good, the heat that allows LED send conducts rapidly, effectively control LED junction temperature increases LED useful life and luminous efficiency.
Description of drawings:
Fig. 1 is a process chart of the present invention;
Fig. 2 is a structural representation of the present invention;
Fig. 3 is single encapsulating structure schematic diagram of the present invention;
Fig. 4 is an integrated encapsulation structure schematic diagram of the present invention.
Indication legend in the accompanying drawing
1, encapsulation base 2, liquid metals 3, led chip 4, gold thread 5, fluorescent material glue-line 6, fluid sealant 7, support 8, electrode
Embodiment
Be illustrated in figure 1 as process chart of the present invention, the steps include:
1., the encapsulation base that at first has pit by the metal or metal alloy preparation;
2., getting the appropriate amount of fluid metal injects on the encapsulation base in the pit;
3., led chip is fixed in pit outlet the chip substrate layer is directly contacted with liquid metals, carry out tentatively solid crystalline substance;
4., in led chip periphery and base plate for packaging pit contact position fluid sealant encapsulation process, finish solid crystalline substance;
5., treat solid brilliant back at led chip both positive and negative polarity welding gold thread, the other end of gold thread is connected in the positive and negative electrode of led light source;
6., encapsulate by the embedding of fluorescent material glue-line at last.
Be illustrated in figure 2 as structural representation of the present invention, encapsulation base 1 is provided with pit, coating appropriate amount of fluid metal 2 in the pit, led chip 3 places pit to export its periphery and base plate for packaging contact position fluid sealant 6 encapsulation process, led chip both positive and negative polarity welding lead (being generally gold thread 4) after fixing, last led chip is by 5 encapsulation of fluorescent material glue-line.
LED encapsulation base 1 is made by high-thermal conductive metal or alloy material, and pit is set on the metal base, simultaneously the metallic packaging pedestal can with the radiator integrated design.
Liquid metals 2 is a kind of metal or alloy that at room temperature are in a liquid state, and it is generally the alloy material of tin, magnesium, gallium, indium etc., can select the liquid metals material of suitable fusing point according to actual operating position.
Led chip 3 is a large-power light-emitting diodes.
Fluorescent material glue-line 5 is allocated by a certain percentage by fluorescent material and casting glue and is formed embedding and solidify behind the led chip surface and form.
Fluid sealant 6 is silica gel or resin glue.
Fig. 3 is single encapsulating structure schematic diagram of the present invention; a kind of as shown in the figure single encapsulated LED light source is by encapsulation base 1; liquid metals 2; led chip 3; gold thread 4; fluorescent powder silica gel layer 5; fluid sealant 6; support 7; electrode 8 constitutes; encapsulation base is fixed in the support; led chip is solid brilliant in encapsulation base; fill liquid metal between encapsulation base pit and led chip; make seamless contact the between led chip and encapsulation base; led chip and encapsulation base pit perimeter sealant encapsulation process; play the effect of solid crystalline substance and protection liquid metals; Gu gold thread is welded to connect between led chip both positive and negative polarity behind the crystalline substance and led light source electrode, fluorescent material glue-line embedding encapsulation in encapsulation base and the support.
Fig. 4 is an integrated encapsulation structure schematic diagram of the present invention, a kind of as shown in the figure integrated encapsulated LED light-source structure and technical process and single encapsulated LED light source are basic identical, its difference is the plurality of LEDs chip array arranged and is fixed in base plate for packaging (among the figure base plate for packaging and radiator integral design), connects back fluorescent material glue-line embedding encapsulation by the gold thread connection in series-parallel again.

Claims (5)

1. LED packaging technology of utilizing liquid metals heat conduction, it is characterized in that: the encapsulation base that at first has pit by the metal or metal alloy preparation, getting the appropriate amount of fluid metal injects on the encapsulation base in the pit, then led chip being fixed in the pit outlet makes the led chip substrate layer directly contact with liquid metals, carry out tentatively solid brilliant back in led chip periphery and base plate for packaging pit contact position fluid sealant encapsulation process, treat that solid brilliant back is at led chip both positive and negative polarity welding gold thread, the other end of gold thread is connected in the positive and negative electrode of led light source, is encapsulated by the embedding of fluorescent material glue-line at last.
2. a kind of LED packaging technology of utilizing liquid metals heat conduction according to claim 1, it is characterized in that: described LED encapsulation base is made by high-thermal conductive metal or alloy material, pit is set on the metal base, simultaneously the metallic packaging pedestal can with the radiator integrated design.
3. a kind of LED packaging technology of utilizing liquid metals heat conduction according to claim 1 is characterized in that: described liquid metals is a kind of metal or alloy that at room temperature is in a liquid state.
4. a kind of LED packaging technology of utilizing liquid metals heat conduction according to claim 1 is characterized in that: described fluorescent material glue-line is allocated by a certain percentage by fluorescent material and casting glue and is formed embedding and solidify behind the led chip surface and form.
5. a kind of LED packaging technology of utilizing liquid metals heat conduction according to claim 1, it is characterized in that: described fluid sealant is silica gel or resin glue.
CN2010102804555A 2010-09-03 2010-09-03 LED packaging process for conducting heat by using liquid metal Pending CN101980390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010102804555A CN101980390A (en) 2010-09-03 2010-09-03 LED packaging process for conducting heat by using liquid metal

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Application Number Priority Date Filing Date Title
CN2010102804555A CN101980390A (en) 2010-09-03 2010-09-03 LED packaging process for conducting heat by using liquid metal

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CN101980390A true CN101980390A (en) 2011-02-23

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104019389A (en) * 2014-05-30 2014-09-03 广东金源照明科技有限公司 Efficient-heat-dissipation integrated LED modulator tube structure and production process thereof
CN112599649A (en) * 2019-10-02 2021-04-02 北京易美新创科技有限公司 LED's ceramic packaging hardware
CN113328027A (en) * 2021-06-04 2021-08-31 东莞中之科技股份有限公司 LED die bonding method and die bonding structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101103658A (en) * 2005-01-18 2008-01-09 国际商业机器公司 Heterogeneous thermal interface for cooling
CN101170152A (en) * 2006-10-26 2008-04-30 江苏稳润光电有限公司 Heat radiation method for LED high-power tube wafer
CN101262030A (en) * 2007-03-05 2008-09-10 萧正成 LED encapsulation unit
CN101800269A (en) * 2009-02-09 2010-08-11 亿光电子工业股份有限公司 Luminescent device and manufacturing method thereof
CN101818888A (en) * 2009-02-26 2010-09-01 连展科技(深圳)有限公司 Irradiating block and light-emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101103658A (en) * 2005-01-18 2008-01-09 国际商业机器公司 Heterogeneous thermal interface for cooling
CN101170152A (en) * 2006-10-26 2008-04-30 江苏稳润光电有限公司 Heat radiation method for LED high-power tube wafer
CN101262030A (en) * 2007-03-05 2008-09-10 萧正成 LED encapsulation unit
CN101800269A (en) * 2009-02-09 2010-08-11 亿光电子工业股份有限公司 Luminescent device and manufacturing method thereof
CN101818888A (en) * 2009-02-26 2010-09-01 连展科技(深圳)有限公司 Irradiating block and light-emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104019389A (en) * 2014-05-30 2014-09-03 广东金源照明科技有限公司 Efficient-heat-dissipation integrated LED modulator tube structure and production process thereof
CN112599649A (en) * 2019-10-02 2021-04-02 北京易美新创科技有限公司 LED's ceramic packaging hardware
CN113328027A (en) * 2021-06-04 2021-08-31 东莞中之科技股份有限公司 LED die bonding method and die bonding structure

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Application publication date: 20110223