CN101924886B - 固态成像装置、制造以及驱动该装置的方法以及电子设备 - Google Patents
固态成像装置、制造以及驱动该装置的方法以及电子设备 Download PDFInfo
- Publication number
- CN101924886B CN101924886B CN2010101072189A CN201010107218A CN101924886B CN 101924886 B CN101924886 B CN 101924886B CN 2010101072189 A CN2010101072189 A CN 2010101072189A CN 201010107218 A CN201010107218 A CN 201010107218A CN 101924886 B CN101924886 B CN 101924886B
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- CN
- China
- Prior art keywords
- holding capacitor
- accepting part
- light accepting
- substrate
- signal charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-025348 | 2009-02-05 | ||
| JP2009025348A JP5375142B2 (ja) | 2009-02-05 | 2009-02-05 | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101924886A CN101924886A (zh) | 2010-12-22 |
| CN101924886B true CN101924886B (zh) | 2013-01-02 |
Family
ID=42396913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101072189A Expired - Fee Related CN101924886B (zh) | 2009-02-05 | 2010-01-29 | 固态成像装置、制造以及驱动该装置的方法以及电子设备 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8334498B2 (enExample) |
| JP (1) | JP5375142B2 (enExample) |
| KR (1) | KR20100090196A (enExample) |
| CN (1) | CN101924886B (enExample) |
| TW (1) | TWI449168B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4494492B2 (ja) * | 2008-04-09 | 2010-06-30 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
| JP5432799B2 (ja) * | 2010-03-30 | 2014-03-05 | オリンパスイメージング株式会社 | 撮像装置、撮像システム、撮像方法 |
| JP2012199489A (ja) * | 2011-03-23 | 2012-10-18 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
| JP5936323B2 (ja) * | 2011-09-26 | 2016-06-22 | キヤノン株式会社 | 画像記録装置およびその制御方法 |
| US20130258144A1 (en) * | 2012-03-28 | 2013-10-03 | Omnivision Technologies, Inc. | System, apparatus and method for dark current correction |
| KR101975028B1 (ko) | 2012-06-18 | 2019-08-23 | 삼성전자주식회사 | 이미지 센서 |
| JP2015088691A (ja) * | 2013-11-01 | 2015-05-07 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| US9769398B2 (en) * | 2016-01-06 | 2017-09-19 | Microsoft Technology Licensing, Llc | Image sensor with large-area global shutter contact |
| JP2017183870A (ja) * | 2016-03-29 | 2017-10-05 | ソニー株式会社 | 撮像処理装置、撮像処理方法、コンピュータプログラム及び電子機器 |
| WO2018205028A1 (en) * | 2017-05-09 | 2018-11-15 | Ka Imaging Inc. | Apparatus for radiation detection in a digital imaging system |
| CN111145825B (zh) * | 2019-12-31 | 2021-09-24 | 长江存储科技有限责任公司 | 存储结构电荷保持性能的检测方法及检测装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716628A (zh) * | 2004-06-30 | 2006-01-04 | 索尼株式会社 | 固态成像装置、相机及制造固态成像装置的方法 |
| CN1728783A (zh) * | 2004-07-29 | 2006-02-01 | 索尼株式会社 | 固态成像装置、其制造和驱动方法和照相机 |
| CN1956490A (zh) * | 2005-10-28 | 2007-05-02 | 索尼株式会社 | 固态成像器件、驱动固态成像器件的方法和成像设备 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920007355B1 (ko) * | 1990-05-11 | 1992-08-31 | 금성일렉트론 주식회사 | Ccd영상 소자의 구조 및 제조방법 |
| JPH04268764A (ja) * | 1991-02-25 | 1992-09-24 | Sony Corp | 固体撮像装置 |
| DE4209536C3 (de) * | 1992-03-24 | 2000-10-05 | Stuttgart Mikroelektronik | Bildzelle für einen Bildaufnehmer-Chip |
| JP2565247B2 (ja) * | 1995-04-21 | 1996-12-18 | ソニー株式会社 | 固体撮像装置及びビデオカメラの露光時間制御方法 |
| JPH09246514A (ja) * | 1996-03-12 | 1997-09-19 | Sharp Corp | 増幅型固体撮像装置 |
| US5952686A (en) * | 1997-12-03 | 1999-09-14 | Hewlett-Packard Company | Salient integration mode active pixel sensor |
| JP2003219281A (ja) | 2002-01-18 | 2003-07-31 | Sony Corp | 撮像装置およびそのシャッタ駆動方法 |
| JP4484449B2 (ja) * | 2003-05-08 | 2010-06-16 | 富士フイルム株式会社 | 固体撮像装置 |
| JP2007036609A (ja) * | 2005-07-26 | 2007-02-08 | Matsushita Electric Ind Co Ltd | 固体撮像装置の駆動方法および固体撮像装置 |
| US7728277B2 (en) * | 2005-11-16 | 2010-06-01 | Eastman Kodak Company | PMOS pixel structure with low cross talk for active pixel image sensors |
| JP5375141B2 (ja) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
-
2009
- 2009-02-05 JP JP2009025348A patent/JP5375142B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-22 KR KR1020100005906A patent/KR20100090196A/ko not_active Withdrawn
- 2010-01-22 TW TW099101810A patent/TWI449168B/zh not_active IP Right Cessation
- 2010-01-28 US US12/695,336 patent/US8334498B2/en not_active Expired - Fee Related
- 2010-01-29 CN CN2010101072189A patent/CN101924886B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716628A (zh) * | 2004-06-30 | 2006-01-04 | 索尼株式会社 | 固态成像装置、相机及制造固态成像装置的方法 |
| CN1728783A (zh) * | 2004-07-29 | 2006-02-01 | 索尼株式会社 | 固态成像装置、其制造和驱动方法和照相机 |
| CN1956490A (zh) * | 2005-10-28 | 2007-05-02 | 索尼株式会社 | 固态成像器件、驱动固态成像器件的方法和成像设备 |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2005-203755A 2005.07.28 |
| JP特开2006-237122A 2006.09.07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010182888A (ja) | 2010-08-19 |
| CN101924886A (zh) | 2010-12-22 |
| US8334498B2 (en) | 2012-12-18 |
| KR20100090196A (ko) | 2010-08-13 |
| JP5375142B2 (ja) | 2013-12-25 |
| TWI449168B (zh) | 2014-08-11 |
| TW201101477A (en) | 2011-01-01 |
| US20100193670A1 (en) | 2010-08-05 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130102 Termination date: 20160129 |
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| EXPY | Termination of patent right or utility model |