CN101924886B - 固态成像装置、制造以及驱动该装置的方法以及电子设备 - Google Patents

固态成像装置、制造以及驱动该装置的方法以及电子设备 Download PDF

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Publication number
CN101924886B
CN101924886B CN2010101072189A CN201010107218A CN101924886B CN 101924886 B CN101924886 B CN 101924886B CN 2010101072189 A CN2010101072189 A CN 2010101072189A CN 201010107218 A CN201010107218 A CN 201010107218A CN 101924886 B CN101924886 B CN 101924886B
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holding capacitor
accepting part
light accepting
substrate
signal charge
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CN101924886A (zh
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神户秀夫
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Sony Corp
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Sony Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2010101072189A 2009-02-05 2010-01-29 固态成像装置、制造以及驱动该装置的方法以及电子设备 Expired - Fee Related CN101924886B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-025348 2009-02-05
JP2009025348A JP5375142B2 (ja) 2009-02-05 2009-02-05 固体撮像装置、固体撮像装置の駆動方法、及び電子機器

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CN101924886A CN101924886A (zh) 2010-12-22
CN101924886B true CN101924886B (zh) 2013-01-02

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US (1) US8334498B2 (enExample)
JP (1) JP5375142B2 (enExample)
KR (1) KR20100090196A (enExample)
CN (1) CN101924886B (enExample)
TW (1) TWI449168B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4494492B2 (ja) * 2008-04-09 2010-06-30 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP5432799B2 (ja) * 2010-03-30 2014-03-05 オリンパスイメージング株式会社 撮像装置、撮像システム、撮像方法
JP2012199489A (ja) * 2011-03-23 2012-10-18 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5936323B2 (ja) * 2011-09-26 2016-06-22 キヤノン株式会社 画像記録装置およびその制御方法
US20130258144A1 (en) * 2012-03-28 2013-10-03 Omnivision Technologies, Inc. System, apparatus and method for dark current correction
KR101975028B1 (ko) 2012-06-18 2019-08-23 삼성전자주식회사 이미지 센서
JP2015088691A (ja) * 2013-11-01 2015-05-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9769398B2 (en) * 2016-01-06 2017-09-19 Microsoft Technology Licensing, Llc Image sensor with large-area global shutter contact
JP2017183870A (ja) * 2016-03-29 2017-10-05 ソニー株式会社 撮像処理装置、撮像処理方法、コンピュータプログラム及び電子機器
WO2018205028A1 (en) * 2017-05-09 2018-11-15 Ka Imaging Inc. Apparatus for radiation detection in a digital imaging system
CN111145825B (zh) * 2019-12-31 2021-09-24 长江存储科技有限责任公司 存储结构电荷保持性能的检测方法及检测装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1716628A (zh) * 2004-06-30 2006-01-04 索尼株式会社 固态成像装置、相机及制造固态成像装置的方法
CN1728783A (zh) * 2004-07-29 2006-02-01 索尼株式会社 固态成像装置、其制造和驱动方法和照相机
CN1956490A (zh) * 2005-10-28 2007-05-02 索尼株式会社 固态成像器件、驱动固态成像器件的方法和成像设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920007355B1 (ko) * 1990-05-11 1992-08-31 금성일렉트론 주식회사 Ccd영상 소자의 구조 및 제조방법
JPH04268764A (ja) * 1991-02-25 1992-09-24 Sony Corp 固体撮像装置
DE4209536C3 (de) * 1992-03-24 2000-10-05 Stuttgart Mikroelektronik Bildzelle für einen Bildaufnehmer-Chip
JP2565247B2 (ja) * 1995-04-21 1996-12-18 ソニー株式会社 固体撮像装置及びビデオカメラの露光時間制御方法
JPH09246514A (ja) * 1996-03-12 1997-09-19 Sharp Corp 増幅型固体撮像装置
US5952686A (en) * 1997-12-03 1999-09-14 Hewlett-Packard Company Salient integration mode active pixel sensor
JP2003219281A (ja) 2002-01-18 2003-07-31 Sony Corp 撮像装置およびそのシャッタ駆動方法
JP4484449B2 (ja) * 2003-05-08 2010-06-16 富士フイルム株式会社 固体撮像装置
JP2007036609A (ja) * 2005-07-26 2007-02-08 Matsushita Electric Ind Co Ltd 固体撮像装置の駆動方法および固体撮像装置
US7728277B2 (en) * 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
JP5375141B2 (ja) * 2009-02-05 2013-12-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1716628A (zh) * 2004-06-30 2006-01-04 索尼株式会社 固态成像装置、相机及制造固态成像装置的方法
CN1728783A (zh) * 2004-07-29 2006-02-01 索尼株式会社 固态成像装置、其制造和驱动方法和照相机
CN1956490A (zh) * 2005-10-28 2007-05-02 索尼株式会社 固态成像器件、驱动固态成像器件的方法和成像设备

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2005-203755A 2005.07.28
JP特开2006-237122A 2006.09.07

Also Published As

Publication number Publication date
JP2010182888A (ja) 2010-08-19
CN101924886A (zh) 2010-12-22
US8334498B2 (en) 2012-12-18
KR20100090196A (ko) 2010-08-13
JP5375142B2 (ja) 2013-12-25
TWI449168B (zh) 2014-08-11
TW201101477A (en) 2011-01-01
US20100193670A1 (en) 2010-08-05

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