CN101908459B - Loading stage mechanism and plasma processing apparatus using the same - Google Patents

Loading stage mechanism and plasma processing apparatus using the same Download PDF

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CN101908459B
CN101908459B CN2010102535313A CN201010253531A CN101908459B CN 101908459 B CN101908459 B CN 101908459B CN 2010102535313 A CN2010102535313 A CN 2010102535313A CN 201010253531 A CN201010253531 A CN 201010253531A CN 101908459 B CN101908459 B CN 101908459B
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voltage
sucker
year
direct voltage
platform
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CN101908459A (en
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古屋敦城
东条利洋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

The invention provides a loading station mechanism, a plasma processing apparatus and a pressure exertion method, wherein the loading station mechanism promotes electric charge accumulation and electric charge release rapidly respectively by reducing time constant of sucking disc equivalent scheme when exerting DC voltage to a sucker electrode and cutting off DC voltage. The loading station mechanism is set for loading a processed object (W) that processed by plasma processing in a processing container (52), which is provided with a loading station (84), an electrostatic chucks (86)of a sucker electrode (114) inside, a DC high-tension supply (120) connected by a power feeder (116), a switch (124) for the sucking disc and a filter (118) for preventing the high frequency power from enteringthat are inserted in midway of the power feeder, a DC ingredient detection circuit (96) for detecting DC ingredient of the loading station (84), and a switch control part (112) of the control switch part. The filter (118) is formed by sensing elements and capacitance element, and does not contain resistance element.

Description

Carry and put platform mechanism and plasma processing apparatus
The application is that application number is 200910203454.8, the applying date is on May 21st, 2009, denomination of invention is divided an application for " carry and put platform mechanism, plasma processing apparatus and voltage application method "
Technical field
The present invention relates to the handled objects such as glass substrate of semiconductor substrate, liquid crystal indicator are carried out that the plasma processing apparatus of Cement Composite Treated by Plasma, carrying of in this plasma processing unit, using are put platform mechanism and apply the voltage application method of voltage to electrostatic chuck.
Background technology
Generally speaking, when making semiconductor integrated circuit, liquid crystal indicator, need on semiconductor substrate, glass substrate, carry out film forming processing, etch processes, modification processing, oxide-diffused processing etc. repeatedly.
And, in above-mentioned various processing, for example in etch processes etc., use plasma processing apparatus to handle (patent documentation 1～3).Below, with reference to Figure 16, an example of existing plasma processing apparatus is described.Shown in figure 16, this plasma processing unit has the container handling 2 that for example is made up of aluminium alloy, in this container handling 2, can carry out vacuum exhaust through not shown vacuum pumping system.At the top of this container handling 2, the gas introducing mechanism as in this container handling 2, importing necessary gas is provided with the spray head 4 that for example is made up of aluminium alloy, and is provided with to carry at the bottom side of container handling 2 and puts platform mechanism 6.
Put platform mechanism 6 this year and mainly put platform 10 and be arranged on the electrostatic chuck 12 that carries the upper surface side of putting platform 10 and constitute, wherein, carry and put platform 10 and for example constitute by aluminium alloy by carrying of being provided with across the insulating material 8 that for example constitutes by ceramic materials such as aluminium oxide.And, on above-mentioned electrostatic chuck 12, carry as handled object and to put the trap apparatus that for example constitutes by glass substrate or semiconductor substrate, can hold this trap apparatus through electrostatic force.
Like this, above-mentioned spray head 4 is put platform 10 by arranged opposite with carrying, and constitutes upper electrode and lower electrode respectively and becomes the plasma electrode of parallel plate-type.Particularly, put on the platform 10, be connected with high-frequency line 14, on this high-frequency line 14, be inserted with the high frequency electric source 18 of match circuit 16 and for example 13.56MHz successively, generate plasma through RF power at above-mentioned year.
In addition, put on the platform 10, be provided with flip-flop testing circuit 22 via detection line 20 at above-mentioned year.This flip-flop testing circuit 22 high frequency cutoff that on above-mentioned detection line 20, is connected in series successively constitutes with coil 24, first resistance 26 and second resistance 28, punishes out capacitor 30 from above-mentioned high frequency cutoff with the tie point of the coil 24 and first resistance 26.And, measure the voltage drop of above-mentioned second resistance 28 through using determination part 32, can discern the flip-flop of putting platform 10 of carrying in the Cement Composite Treated by Plasma.
And, cut off the RF power of putting platform 10 from carrying through above-mentioned high frequency cutoff with coil 24 and capacitor 30.In addition, this flip-flop testing circuit 22 also has in Cement Composite Treated by Plasma and finishes and discharge when stopping to apply RF power and be charged to sucker electrode 34 and the function of carrying the electric charge of putting platform 10.
In addition, above-mentioned electrostatic chuck 12 embeds sucker electrode 34 in the inside of the tabular insulating material that for example is made up of polyimide based resin or pottery etc. and constitutes.And, extend supply lines 36 from this sucker electrode 34, on this supply lines 36, be connected with DC high-voltage power supply 40 via the filtering portion 38 that stops RF power to get into.
And, through apply the high direct voltage of generation to above-mentioned sucker electrode 34, can adsorb the trap apparatus on this electrostatic chuck 12 with electrostatic force from this DC high-voltage power supply 40.Above-mentioned filtering portion 38 high frequency cutoff that on above-mentioned supply lines 36, is connected in series successively constitutes with resistance 44 with coil 42, tells capacitor 46 from above-mentioned high frequency cutoff with the tie point of coil 42 and resistance 44.
And, stop to be applied to coil 42 through above-mentioned high frequency cutoff and carry the RF power put on the platform 10 around going into DC high-voltage power supply 40.In addition, the downstream in the filtering portion 38 of this supply lines 36 is provided with the switch portion 45 that the sucker that is used to connect, break off DC high-voltage power supply 40 is used.
In such plasma processing apparatus; If being carried to put carrying, puts on the platform 10 handled object; Then closed above-mentioned sucker is with switch portion 45; Apply high direct voltage from above-mentioned DC high-voltage power supply 40 to the sucker electrode 34 of electrostatic chuck 12, in this sucker electrode 34, fully accumulate electric charge, more stably adsorb trap apparatus through electrostatic force.And, after adsorbing, apply RF power, and the gas that flows out regulation from spray head 4 is etching gas for example, produces plasma through above-mentioned RF power, has used the etch processes of plasma through high frequency electric source 18.
Then, when above-mentioned etch processes finishes, the supply of the gas that stops etching, and cut off to be applied to carry and put the RF power on the platform 10.Further; Open above-mentioned sucker with switch portion 45, cut off the high direct voltage on the sucker electrode 34 that is applied to electrostatic chuck 12, then; Be accumulated in sucker electrode 34 with carry the electric charge put on the platform 10 via flip-flop testing circuit 22 by after the discharge fully, take out above-mentioned trap apparatus.
Patent documentation 1: japanese kokai publication hei 08-017808 communique
Patent documentation 2: japanese kokai publication hei 08-031918 communique
Patent documentation 3: japanese kokai publication hei 2002-043402 communique
Summary of the invention
But; In absorption during handled object, electric charge electrostatic force is fully risen and till stable to accumulating at the sucker electrode 34 of above-mentioned electrostatic chuck 12; Or when Cement Composite Treated by Plasma finishes, stopping to apply RF power after to being accumulated in that electric charge on the electrostatic chuck 12 discharges and till stable; Though relevant with the surface area of sucker electrode 34, can't need second time of unit degree separately with avoiding.This is to be based on resistance 26,28,44, sucker electrode 34 and to carry the time constant of putting the capacitive component that forms between the platform 10 because the sucker equivalent electric circuit has.
In this case; When the diameter dimension of semiconductor substrate is the small size of 6 inches or 8 inches, special problem can not take place, still; When diameter dimension is 12 inches (300mm) or more than 12 inches the time; Up to the time required till accumulating electric charge fully on the sucker electrode 34 (electric charge accumulation time), or, Cement Composite Treated by Plasma needs the suitable time aspect required time (charge releasing time) till finishing electric charge in will being accumulated in sucker electrode 34 and discharge fully at the absorption handled object, therefore; The productivity ratio step-down that has product, the problem that disposal ability is low.
Particularly there is following problem: be under the situation of glass substrate of liquid crystal indicator at handled object; The maximization of this glass substrate is remarkable; Even to have length and width be the large-size glass substrate about 3m * 3m; At handled object is under the situation of such large-size glass substrate, above-mentioned electric charge accumulation time and charge releasing time even need about 50～60 seconds separately, and disposal ability is reduced significantly.
The present invention is conceived to the problems referred to above point, accomplishes in order to address this problem effectively.The object of the present invention is to provide a kind of year and put platform mechanism, use its plasma processing apparatus and apply voltage method to electrostatic chuck; Put platform mechanism this year and can reduce time constant at the sucker equivalent electric circuit when sucker electrode applies direct voltage and will be applied to direct voltage on the sucker electrode and cut off the time; Consequently; The accumulating with the release of electric charge of electric charge that sucker electrode is carried out promptly carried out separately, can improve the production capacity of product, improve disposal ability.
The invention of claim 1 is to put platform mechanism in a kind of year; Being arranged on can be by in the container handling of vacuum exhaust; Carry and put the handled object that utilizes the plasma that produces through RF power to implement the Cement Composite Treated by Plasma of regulation; Put platform mechanism this year and be characterised in that, comprising: be used for carrying put said handled object, put platform by carrying of constituting of conductive component; Be configured in the upper surface of putting platform in said year, the electrostatic chuck of sucker electrode is arranged in set inside in order to adsorb said handled object; Be connected the DC high-voltage power supply on the said sucker electrode in order to apply the direct voltage that produces electrostatic force via supply lines; Be plugged in said supply lines midway, the sucker that is closed during said handled object in absorption uses switch portion; To be applied to said year when the said Cement Composite Treated by Plasma and to put the flip-flop on the platform and be connected the flip-flop testing circuit of putting in said year on the platform in order to detect; The by-pass line of the said flip-flop testing circuit of bypass; Thereby be plugged in said by-pass line midway, make said flip-flop testing circuit bypass make the bypass of putting platform ground connection in said year use switch portion when said sucker is switched to closure state with switch portion and when switching to open mode; With the said sucker of control with switch portion and said bypass switch control part with switch portion.
Like this; Put in the platform mechanism carrying, closed sucker with switch portion when sucker electrode applies direct voltage, closure makes flip-flop testing circuit bypass and makes and carry the bypass of putting platform ground connection and use switch portion; Further; Cut off when being applied to the direct voltage on the sucker electrode with switch portion opening sucker, also closedly make flip-flop testing circuit bypass and make and carry the bypass of putting platform ground connection and use switch portion, therefore; Can reduce when sucker electrode applies direct voltage with the time constant of cutting off the sucker equivalent electric circuit when being applied to the direct voltage on the sucker electrode; Consequently, the accumulating with the release of electric charge of electric charge that sucker electrode is carried out promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.
The invention of claim 2 is the inventions in claim 1, it is characterized in that: also comprise the filtering portion midway that is plugged in said supply lines, this filtering portion is used to stop said RF power to get into said DC high-voltage power supply.
The invention of claim 3 is inventions of claim 2, it is characterized in that: said filtering portion is made up of resistive element, perhaps is made up of resistive element and capacity cell.
The invention of claim 4 is inventions of claim 2, it is characterized in that: said filtering portion is made up of sensing element, perhaps is made up of sensing element and capacity cell.
The invention of claim 5 is each described inventions in the claim 1～4, it is characterized in that: said flip-flop testing circuit via detection line with put platform in said year and be connected.
The invention of claim 6 is each described inventions in the claim 1～5; It is characterized in that: said switch control part is controlled; Make when said sucker is switched to closure state with switch portion, simultaneously or before switching said bypass is switched to closure state with switch portion with this switching.
The invention of claim 7 is inventions of claim 6; It is characterized in that: said switch control part is controlled, and makes when said sucker has been passed through the stipulated time with switch portion after open mode switches to closure state, said bypass to be switched to open mode with switch portion.
The invention of claim 8 is each described inventions in the claim 1～7; It is characterized in that: said switch control part is controlled; Make when said sucker is switched to open mode with switch portion, simultaneously or before switching said bypass is switched to closure state with switch portion with this switching.
The invention of claim 9 is inventions of claim 8; It is characterized in that: said switch control part is controlled, and makes when said sucker has been passed through the stipulated time with switch portion after closure state switches to open mode, said bypass to be switched to open mode with switch portion.
The invention of claim 10 is to put platform mechanism in a kind of year; Being arranged on can be by in the container handling of vacuum exhaust; Carry the handled object put the Cement Composite Treated by Plasma that plasma that utilization produces through RF power stipulates; Put platform mechanism this year and be characterised in that, comprising: be used for carrying put said handled object, put platform by carrying of constituting of conductive component; Be configured in the upper surface of putting platform in said year, the electrostatic chuck of sucker electrode is arranged in set inside in order to adsorb said handled object; Be connected the DC high-voltage power supply on the said sucker electrode in order to apply the direct voltage that produces electrostatic force via supply lines, be used to the filtering portion that stops RF power to get into midway being provided with of this supply lines; Be plugged in said supply lines midway, the sucker that is closed during said handled object in absorption uses switch portion; To be applied to said year when the said Cement Composite Treated by Plasma and to put the flip-flop on the platform and be connected the flip-flop testing circuit of putting in said year on the platform in order to detect; With the said sucker of control with the switch control part of switch portion, said filtering portion does not comprise resistive element and is formed by capacity cell and sensing element.
The invention of claim 11 is each inventions in the claim 1～10; It is characterized in that: said DC high-voltage power supply can apply the multiple direct voltage that can be switched, and also comprises: be arranged on said supply lines midway, be used to keep watch on the current potential supervision portion of the current potential of said sucker electrode side; And power control part; Said DC power supply is controlled; Make when said sucker is closed with switch portion, to apply the first high direct voltage of voltage in the said multiple direct voltage, and switch to the second low direct voltage of voltage at the detected value of said current potential supervision portion during for the value of regulation and apply.
The invention of claim 12 is inventions of claim 11; It is characterized in that: said DC high-voltage power supply can apply the multiple direct voltage that can switch; Also comprise the power control part of controlling said DC high-voltage power supply, said power control part is controlled, and makes when said sucker is closed with switch portion; Apply the first high direct voltage of voltage in the said multiple direct voltage at first, when having passed through official hour, switch to the second low voltage of voltage and apply.
The invention of claim 13 is each inventions in the claim 1～10; It is characterized in that: said official hour is, till beginning after said sucker electrode applies said direct voltage to reach rated voltage to the current potential of said sucker electrode during below length.
The invention of claim 14 is each inventions in the claim 11～13, it is characterized in that: said first direct voltage is set to higher than the rated voltage of said sucker electrode, and said second direct voltage is set to said rated voltage.
The invention of claim 15 is each described inventions in the claim 11～14, and it is characterized in that: the output voltage of said DC high-voltage power supply is made into variable, makes it possible to export said first direct voltage and said second direct voltage.
The invention of claim 16 is each described inventions in the claim 1～14, it is characterized in that: said DC high-voltage power supply has the second source portion of first power supply unit with said second direct voltage of output of said first direct voltage of output.
The invention of claim 17 is each described inventions in the claim 1～16, and it is characterized in that: said handled object is an insulant.
The invention of claim 18 is a kind of plasma processing apparatus, and the Cement Composite Treated by Plasma to handled object is stipulated is characterized in that, comprising: can be by the container handling of vacuum exhaust; Be used in said container handling, importing the gas introducing mechanism of necessary gas; To carrying out the exhaust gear of vacuum exhaust in the said container handling; Be used for said container handling contain put said handled object, claim 1～17 put platform mechanism in each described year.
The invention of claim 19 is inventions of claim 18, it is characterized in that: said gas introducing mechanism comprises the spray head, by this spray head with put carrying of platform mechanism in said year and put upper electrode and the lower electrode that platform forms parallel plate-type.
The invention of claim 20 is the described inventions of claim 19, it is characterized in that: put at said year and be connected with high frequency electric source on the platform.
The invention of claim 21 is each described inventions in the claim 18～20, it is characterized in that: be connected with second high frequency electric source at said spray head.
The invention of claim 22 is each described inventions in the claim 18～21, it is characterized in that: said handled object is semiconductor substrate or insulant substrate.
The invention of claim 23 is a kind ofly to carry the electrostatic chuck put platform and apply voltage method to being arranged on; Put platform this year and contain the handled object of putting by the enforcement Cement Composite Treated by Plasma at the container handling that can carry out vacuum exhaust; And can be applied in high frequency voltage; Said method is characterised in that: on the sucker electrode of said electrostatic chuck; Apply the first high direct voltage of voltage in the multiple direct voltage, and when applying said first direct voltage or before apply, make said year and put platform ground connection, when beginning through the stipulated time from applying said first direct voltage; Switching to second direct voltage that said first direct current of voltage ratio forces down applies; Cut off the ground connection of putting platform in said year when having begun to pass through the stipulated time, after the ground connection of platform was put in cut-out in said year, put platform to said year and apply high frequency voltage from switching to said second direct voltage.
The invention of claim 24 is the described inventions of claim 23, it is characterized in that: confirmed in advance from applying the said official hour that said first direct voltage begins.
The invention of claim 25 is the described inventions of claim 23; It is characterized in that: from applying the said official hour that said first direct voltage begins be, till beginning after said sucker electrode applies said first direct voltage to reach rated voltage to the current potential of said sucker electrode during below length.
The invention of claim 26 is each described inventions in the claim 23～25, it is characterized in that: from switching to the said official hour that said second direct voltage begins be the time to the current potential of putting platform in said year till stable.
Adopt and put platform mechanism in of the present invention year, use the plasma processing apparatus of putting platform mechanism this year and apply voltage method, can bring into play following superior action effect to electrostatic chuck.
According to the present invention; Put in the platform mechanism carrying; Closed sucker with switch portion when sucker electrode applies direct voltage, closure makes flip-flop testing circuit bypass and makes and carry the bypass put platform ground connection and use switch portion, and; Also closedly when opening sucker and cut off the direct voltage that is applied on the sucker electrode with switch portion make flip-flop testing circuit bypass and make and carry the bypass of putting platform ground connection and use switch portion; Therefore, can reduce when sucker electrode applies direct voltage with the time constant of cutting off the sucker equivalent electric circuit when being applied to the direct voltage on the sucker electrode, consequently; Make the accumulating with the release of electric charge of electric charge of sucker electrode promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.
Description of drawings
Fig. 1 is the structure chart that first execution mode of the plasma processing apparatus of putting platform mechanism in of the present invention year has been used in expression.
Fig. 2 is the expression sucker with switch portion and bypass with the switching time of switch portion, and the sequential chart of the relation on opportunity that applies of the current potential of sucker electrode and RF power.
Fig. 3 is that the figure with respect to the sucker equivalent electric circuit of direct voltage on the electrostatic chuck put platform mechanism is carried in expression.
Fig. 4 is the figure of the potential change of expression sucker electrode.
Fig. 5 is the structure chart of major part that second execution mode of platform mechanism was put in expression in of the present invention year.
Fig. 6 is the structure chart of major part that the 3rd execution mode of platform mechanism was put in expression in of the present invention year.
Fig. 7 is the structure chart of major part that the 4th execution mode of platform mechanism was put in expression in of the present invention year.
Fig. 8 is the structure chart of major part that the 5th execution mode of platform mechanism was put in expression in of the present invention year.
Fig. 9 is that expression is from beginning the time till sucker electrode applies voltage to reach setting voltage and carrying the figure that puts the long-pending relation of table top.
Figure 10 is the structure chart of major part that the 6th execution mode of platform mechanism was put in expression in of the present invention year.
Figure 11 is the chart as the variation of the current potential of the some P1 of current potential supervision portion that is illustrated in after sucker electrode applies direct voltage.
Figure 12 is opportunity and the voltage of current potential supervision portion and the sequential chart of the variation that sucker applies voltage of the switching of each switch portion of expression.
Figure 13 is the flow chart that is used for explaining the action of the 6th execution mode.
Figure 14 is the structure chart of major part that the 7th execution mode of platform mechanism was put in expression in of the present invention year.
Figure 15 is the figure of the variation of expression DC high-voltage power supply.
Figure 16 is the structure chart of an example of the existing plasma processing apparatus of expression.
The explanation of symbol
46 capacitors (capacity cell)
50 plasma processing apparatus
52 container handlings
60 exhaust gears
68 spray heads (gas introducing mechanism)
Put platform mechanism in 80 years
Put platform in 84 years
86 electrostatic chucks
92 high frequency electric sources
94 detection lines
96 flip-flop testing circuits
98 high frequency cutoff are used coil
100 first resistance
102 second resistance
108 by-pass lines
Switch portion is used in 110 bypasses
112 switch control parts
114 sucker electrodes
116 supply lines
118 filtering portions
120 DC high-voltage power supplies
122 high frequency cutoff are with coil (sensing element)
124 suckers are used switch portion
126 apparatus control portion
130 high frequency cutoff are with coil (sensing element)
150 current potential supervision portions
152 power control parts
154A first power supply unit
154B second source portion
156 switch portion
W glass substrate (handled object)
Embodiment
Below, be elaborated to the plasma processing apparatus putting platform mechanism in of the present invention year, use to put platform mechanism this year with to the preferred implementation that electrostatic chuck applies voltage method according to accompanying drawing.
(first execution mode)
Fig. 1 is the structure chart that first execution mode of the plasma processing apparatus of putting platform mechanism in of the present invention year has been used in expression.At this,, be that example describes with the situation of glass substrate being carried out plasma etch process as Cement Composite Treated by Plasma.
As shown in Figure 1, this plasma processing unit 50 has the container handling 52 that for example is made up of aluminium alloy, these container handling 52 ground connection.On the sidewall of this container handling 52, be formed with and be used to opening 54 that trap apparatus is passed through, on this opening 54, be equipped with its gate valve that opens and closes airtightly 56.
In addition, the periphery in the bottom of container handling 52 is provided with exhaust outlet 58, and this exhaust outlet 58 is provided with carrying out the exhaust gear 60 of vacuum exhaust in the container handling 52.Particularly, this exhaust gear 60 has the exhaust lay out 62 that is connected with above-mentioned exhaust outlet 58, on this exhaust lay out 62, is inserted with pressure-regulating valve 64 and vacuum pump 66 successively, can be to vacuumizing and maintain the pressure of regulation in the container handling 52.
In addition, at the top of container handling 52, the gas introducing mechanism as in this container handling 52, importing necessary gas is provided with the spray head 68 that for example is made up of aluminium alloy.Be provided with gas access 70 on the top of this spray head 68, on this gas access 70, be connected with gas source 74 via gas line 72.And, this gas line 72 be inserted with the flow controller 76 as mass flow controller midway, in order to the necessary gas of control flow and circulation etching gas for example.
On the gas blowing face of the lower surface of above-mentioned spray head 68, be formed with a plurality of gas squit holes 78, supply with the above-mentioned gas that is supplied in order to processing space S to its below.And, in this container handling 52, put platform mechanism 80 to be provided with of the present invention year with above-mentioned spray head 68 opposed modes.
Particularly; Putting platform mechanism 80 this year for example mainly comprises by carrying of constituting of electric conducting materials such as aluminium and puts platform 84 and the electrostatic chuck 86 that is arranged on its upper surface side; Wherein, carry and put platform 84 is arranged on container handling 52 across the insulating material 82 that for example is made up of ceramic materials such as aluminium oxide bottom.And, on this electrostatic chuck 86, carry as handled object and to put the glass substrate W that liquid crystal indicator is for example used, can be through this glass substrate of electrostatic force absorption W.At this, it for example respectively is the size about 3m * 3m in length and breadth that the size of above-mentioned glass substrate W is set at, and is very large size.At this,, except metals such as for example aluminium, can also use alloy, carbon and their composite materials etc. such as stainless steel as above-mentioned electric conducting material.
Like this, above-mentioned spray head 68 is put platform 84 by configuration opposed to each other with carrying, and constitutes upper electrode and lower electrode respectively and becomes the plasma electrode of parallel plate-type.Particularly, put on the platform 84, be connected with high-frequency line 88, on this high-frequency line 88, be inserted with the high frequency electric source 92 of match circuit 90 and for example 13.56MHz successively, produce plasma through RF power at above-mentioned year.
In addition, put on the platform 84, be provided with flip-flop testing circuit 96 via detection line 94 at above-mentioned year.And, this detection line 94 is provided with in the downstream of match circuit 90 branch, wherein, match circuit 90 is arranged on the above-mentioned high-frequency line 88.This flip-flop testing circuit 96 is connected in series high frequency cutoff successively and constitutes with coil 98, first resistance 100 and second resistance 102 on above-mentioned detection line 94; Punish out capacitor 104 in above-mentioned high frequency cutoff with the tie point of the coil 98 and first resistance 100, and with the other end ground connection of this capacitor 104.And, measure the voltage drop of above-mentioned second resistance 102 through using determination part 106, can detect and discern the flip-flop of putting platform 84 of carrying in the Cement Composite Treated by Plasma.
And, cut off the RF power of putting platform 84 from carrying through above-mentioned high frequency cutoff with coil 98 and capacitor 104.In addition, this flip-flop testing circuit 96 also has and is used for finishing and will being charged to sucker electrode 86 when stopping to apply RF power and carrying the function that the electric charge of putting platform 84 discharges in Cement Composite Treated by Plasma.
And, on above-mentioned detection line 94, be provided with by-pass line 108 as characteristic of the present invention, the upstream side of the above-mentioned flip-flop testing circuit 96 of this detection line 94 is connected with the downstream.And, be provided with bypass midway with switch portion 110, where necessary at this by-pass line 108; Promptly of the back; When connecting, breaking off to direct voltage that electrostatic chuck 86 applies, closed this bypass is with switch portion 110, makes to put platform 84 direct ground connection in above-mentioned year and do not pass through resistance and coil.This bypass is carried out through switch control part 112 with the control of the on-off action of switch portion 110.
In addition, above-mentioned electrostatic chuck 86 is imbedded the inside of the slab insulant that is made up of polyimide based resin or pottery with sucker electrode 114 and is constituted.And, extend supply lines 116 from this sucker electrode 114, on this supply lines 116, the filtering portion 118 via being used to stop RF power to get into is connected with DC high-voltage power supply 120.
And, be applied on the above-mentioned sucker electrode 114 through the high direct voltage that will produce from this DC high-voltage power supply 120, make with the glass substrate W on this electrostatic chuck 86 of electrostatic force absorption.The output voltage of this DC high-voltage power supply 120 for example is about 3kV, but is not limited thereto.At this, above-mentioned filtering portion 118 by sensing element, be that high frequency cutoff constitutes with coil 122.
And,, can stop to be applied to and carry the RF power put on the platform 84 with coil 122 through this high frequency cutoff around going into DC high-voltage power supply 120.In addition, the downstream in the filtering portion 118 of this supply lines 116 is provided with the sucker that is used to connect, break off DC high-voltage power supply 120 with switch portion 124.
This sucker is also undertaken by above-mentioned switch control part 112 with the control of the on-off action of switch portion 124.In addition; Carry out the whole control of action of this plasma processing unit 50 through the apparatus control portion 126 that constitutes by computer, for example the supply of the control of processing pressure, supply gas begin, supply with the control that stops, control that RF power applies, with respect to the indication of the on-off action of each switch portion of switch control part 112 etc.In addition, carrying out the computer program that the required computer of this action control can read is stored in the storage medium 128.CD), formation such as CD-ROM, hard disk, flash memory or DVD this storage medium 128 is by floppy disk, CD (Compact Disc:.In addition, though not shown, put platform mechanism 80 in above-mentioned year and be provided with the not shown lifter pin that receives handled object when moving into handled object taking out of.
Then, with reference to Fig. 2 and Fig. 3 the plasma etch process of using the plasma processing apparatus 50 that constitutes in the above described manner to carry out is described.Fig. 2 is the expression sucker with switch portion and the bypass sequential chart with the relation on the opportunity that applies of the current potential of opportunity of the switching of switch portion and sucker electrode and RF power, and Fig. 3 is the figure with respect to the sucker equivalent electric circuit of direct voltage in the electrostatic chuck of representing year to put platform mechanism.
At first, the flow process of integral body is described, will move in the container handling 52 with opening 54 through the gate valve of opening 56, put on the platform 84 putting its year carrying through the not shown lifter pin that goes up and down, sealing in the container handling 52 as the glass substrate W that is processed substrate.
Then; When being carried to put carrying, glass substrate W puts 84 last times of platform; Closed above-mentioned sucker is with switch portion 124; Apply higher direct voltage from above-mentioned DC high-voltage power supply 120 to the sucker electrode 114 of electrostatic chuck 86, on this sucker electrode 114, accumulate electric charge fully, utilize electrostatic force stably to adsorb glass substrate W.At this, during with switch portion 124, also make bypass only be in closure state in specified time limit with switch portion 110 at the above-mentioned sucker of closure.Then, after adsorbing, apply RF power, and flow out gas such as the etching gas of stipulating, handling space S generation plasma, utilize plasma to carry out etch processes through above-mentioned RF power from spray head 68 by high frequency electric source 92.
In addition; In Cement Composite Treated by Plasma; Through producing current potential in the effect of handling the plasma that space S generates since this current potential and in detection line 94 streaming current, this current potential flows into the ground connection sides through coil 98, first resistance 100 and second resistance 102 of flip-flop testing circuit 96.And, through measure the voltage drop that takes place when electric current flows in above-mentioned second resistance 102 with determination part 106, detect and carry the direct voltage of putting platform 84.
In addition, at this moment,, stop to be applied to and carry the RF power of putting on the platform 84 and change over to and flow to flip-flop testing circuit 96 sides through the effect of above-mentioned coil 98 and capacitor 104.In addition, likewise, carry the RF power of putting on the platform 84 and change over to and flow to flip-flop testing circuit 120 sides through being arranged on high frequency cutoff on the supply lines 116 with the effect of coil 122, stoping to be applied to.
Then, when above-mentioned etch processes finishes, stop to supply with etching gas, and cut off to be applied to carry and put the RF power on the platform 84.Further, open above-mentioned sucker, cut off the high direct voltage on the sucker electrode 114 be applied to electrostatic chuck 86 with switch portion 124, and, will be accumulated in sucker electrode 114 and carry the electric charge of putting on the platform 84 and discharge fully through flip-flop testing circuit 96.At this, when opening above-mentioned sucker, make bypass only during regulation, be in closure state with switch portion 110 with switch portion 124.Then, after the discharge of the electric charge of being accumulated finishes, take out above-mentioned glass substrate.
At this; In existing plasma processing apparatus; Closure sucker shown in Figure 16 with switch portion 45 when sucker electrode 34 applies higher direct voltage; To sucker electrode 34 with carry put accumulate electric charge on the platform 10 and till producing enough electrostatic force required time (electric charge accumulation time) longer, in addition, the required time (charge discharge time) of arriving in order to finish Cement Composite Treated by Plasma till opening sucker and will being accumulated in sucker electrode 34 and year putting electric charge in the platform 10 and discharge fully with switch portion 45 is also longer; But under the situation of using plasma processing apparatus 50 of the present invention, can shorten above-mentioned electric charge accumulation time and charge discharge time significantly.
Promptly; With sucker with switch portion 124 when open mode switches to closure state and when closure state switches to open mode; The bypass that is arranged on the by-pass line 108 is only maintained closure state with switch portion 110 in specified time limit; Make to carry and put platform 84 direct ground connection and, make the resistance components of sucker equivalent electric circuit as far as possible little not via the above-mentioned flip-flop testing circuit 96 that comprises resistance components.Particularly, above-mentioned switch control part 112 is controlled, and makes when above-mentioned sucker is switched to closure state with switch portion 124, switches the while or before switching, above-mentioned bypass is switched to closure state with switch portion 110 with this.
In addition, above-mentioned switch control part 112 is controlled, and makes when above-mentioned sucker is switched to open mode with switch portion 124, switches the while or before switching, above-mentioned bypass is switched to closure state with switch portion 110 with this.Consequently, the time constant of sucker equivalent electric circuit diminishes, and correspondingly, can be promptly sucker electrode 114 is put platform 84 and is carried out electric charge accumulation and charge discharge with carrying.In addition; Switch control part 112 is controlled; Make to switch to closure state or with switch portion 124 after closure state switches to open mode from open mode, when having passed through official hour, bypass is switched to open mode with switch portion 110 from closure state at above-mentioned sucker.
At this, with reference to Fig. 2, to sucker with switch portion 124 and bypass with the current potential of opportunity of the switching of switch portion 110, sucker electrode 114 with apply the relation on the opportunity of RF power and describe.As shown in Figure 2; With the sucker shown in Fig. 2 (A) with switch portion 124 when open mode switches to closure state and when closure state switches to open mode; Shown in Fig. 2 (B); Mode to stride across its switching point maintains closure state with bypass with switch portion 110, through making flip-flop testing circuit 96 bypass, makes the time constant of sucker equivalent electric circuit at this moment little.
In the case; Can when the switching sucker is with the switching of switch portion 124, bypass be switched to closure with switch portion 110; But after sucker is switched to closure with switch portion 124; At least keep the closure state of above-mentioned bypass at official hour T1, to fully accumulating electric charge on the platform 84 and till making electrostatic force stable (with reference to Fig. 2 (C)) with carrying to put at sucker electrode 114 with switch portion 110.This official hour T1 is relevant with the area of sucker electrode 114, is several seconds to tens seconds.
In addition, in the conventional device example, accumulate electric charge, carry the current potential of putting platform 84 and change thereupon through charging to sucker electrode 114; If under this state, apply high frequency voltage, the danger that paradoxical discharge takes place is then arranged, but in this execution mode; Because before applying high frequency voltage, bypass is closed and ground connection with switch portion 110, so can be stabilized in earthing potential with carrying the current potential of putting platform 84; And, because be to apply high frequency voltage, can suppress the generation of paradoxical discharge at this state.
In addition; Equally; Sucker is switched to switch portion 124 open after, keep the closure state of above-mentioned bypass at official hour T2 at least, to being accumulated in sucker electrode 114 and carrying the electric charge put on the platform 84 by (with reference to Fig. 2 (C)) till the discharge fully with switch portion 110.This official hour T2 is relevant with the area of sucker electrode 114, is several seconds to tens seconds.And shown in Fig. 2 (D), RF power is applied in to carry after electrostatic force is stable and puts on the platform 84.In addition, in Cement Composite Treated by Plasma, bypass is in open mode with switch portion 110, and flip-flop testing circuit 96 plays a role, and measures to carry the direct voltage of putting platform 84.
At this, with reference to Fig. 3 and Fig. 4, the sucker equivalent electric circuit of (bypass uses switch portion 110 also to be closure state) described when above-mentioned sucker was opened and closed with switch portion 124.Fig. 3 is that the figure with respect to the sucker equivalent electric circuit of direct voltage on the electrostatic chuck put platform mechanism is carried in expression, and Fig. 4 is the figure of variation of the current potential of expression sucker electrode.
As shown in Figure 3, the series circuit of electromotive force E, resistance components R and the capacitive component C of the DC high-voltage power supply 120 of (bypass also is in closure state with switch portion 110) when opening and closing with switch portion 124 for sucker.At this,,, very little so resistance components R in fact only is arranged on high frequency cutoff on the supply lines 116 with the resistance components of coil 122 because flip-flop testing circuit 96 is by bypass.In addition, area that capacitive component C depends on sucker electrode 114 and the area that carries the upper surface of putting platform 84 owing to depend on the size of device, so in case device size determined then immobilized.
Fig. 4 (A) expression with sucker with switch portion 124 from opening the state when closure is switched, Fig. 4 (B) representes sucker with switch portion 124 from the state of closure when opening switching.And, for reference, in Fig. 4, dot the situation of using existing plasma processing apparatus.
At this, the current potential e (t) of sucker electrode 114 is confirmed by following formula.
e(t)＝E[1-e (-t/RC)]
Here, e representes natural logrithm (exp), RC express time constant, t express time.
As stated, compare, because resistance components R becomes very little, so time constant " RC " becomes very little with existing plasma processing apparatus.Therefore, shown in Fig. 4 (A) and Fig. 4 (B), under situation of the present invention, the transit time till stable is very short.
Being set at the size of sucker electrode in length and breadth, 3m * 3m simulates; The result is that under the situation of conventional device, the time L1 till stable is about 60 seconds; Relative therewith; Under situation of the present invention, the time L2 till stable is about 10 seconds, can confirm as and can shorten electric charge accumulation time and charge discharge time.
And in existing plasma processing apparatus shown in Figure 16, resistance components is the resistance components of first resistance 26, second resistance 28, resistance 44 and coil 24,42, and it is very large value that its numerical value is compared with situation of the present invention.In addition, because device is set to identical size, so the capacitive component C of device of the present invention and conventional device is identical.
Like this; Put in the platform mechanism 80 at of the present invention year, closed sucker with switch portion 124 when sucker electrode 114 applies direct voltage, closure make flip-flop testing circuit 96 bypass and make carry put platform 84 ground connection bypass with switch portion 110; And; Cut off with switch portion 124 when being applied to the direct voltage on the sucker electrode 114 opening sucker, also closed make flip-flop testing circuit 96 bypass and make carry put platform 84 ground connection bypass with switch portion 110, therefore; Can reduce when sucker electrode 114 applies direct voltage with the time constant of cutting off the sucker equivalent electric circuit when being applied to the direct voltage on the sucker electrode 114; Consequently, can make the accumulating with the release of electric charge of electric charge of sucker electrode 114 promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.
In addition; Because 118 in the filtering portion that is used to stop RF power to get into DC high-voltage power supply 120 is made up of with coil 122 high frequency cutoff as sensing element,, can correspondingly reduce the resistance components R (with reference to Fig. 3) in the sucker equivalent electric circuit so compare with existing plasma processing apparatus; Thereby further reduce time constant; Consequently, can shorten electric charge accumulation time and charge discharge time, further improve disposal ability.
(second execution mode)
Then, second execution mode of putting platform mechanism in of the present invention year is described.Fig. 5 is the structure chart of major part that second execution mode of platform mechanism was put in expression in of the present invention year.In addition, for Fig. 1 and the represented identical structure division of structure division of Figure 16, mark identical reference marks and omit its explanation.
In above-mentioned first execution mode; The filtering portion 118 that is connected on the DC high-voltage power supply 120 is made up of with coil 122 high frequency cutoff as sensing element; And be inserted with bypass through the centre and make flip-flop testing circuit 96 bypass where necessary with the by-pass line 108 of switch portion 110; But be not limited in this, also can likewise constitute above-mentioned filtering portion 118 with conventional device shown in Figure 16.
That is, as shown in Figure 5, adopt following structure at this, the filtering portion 38 identical ground with shown in Figure 16 make filtering portion 118 and high frequency cutoff be connected in series with coil 42 and resistance 44, punish out capacitor 46 and make its other end ground connection at both tie points.
In the case, sucker with switch portion 124 and bypass with the opening and closing operations of switch portion 110 with identical to the situation of the explanation that Fig. 2 did.Under the situation of this second execution mode; Identical with the situation of above-mentioned first execution mode; Also can reduce when sucker electrode 114 applies direct voltage with the time constant of cutting off the sucker equivalent electric circuit when being applied to the direct voltage on the sucker electrode 114; Consequently, can make the accumulating with the release of electric charge of electric charge of sucker electrode 114 promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.
But; Compare with the situation of first execution mode, under the situation of this second execution mode, increased the flip-flop (resistance 44) of filtering portion 118; Correspondingly; Time constant increases, and consequently, electric charge accumulation time and charge discharge time ratio are owed rapid property at the situation end of first execution mode.
(the 3rd execution mode)
Then, the 3rd execution mode of putting platform mechanism in of the present invention year is described.Fig. 6 is the structure chart of major part that the 3rd execution mode of platform mechanism was put in expression in of the present invention year.In addition, for the structure division identical structure division represented, mark identical reference marks and omit its explanation with Fig. 1, Fig. 5 and Figure 16.
In second execution mode shown in Figure 5 before; It is identical with conventional device shown in Figure 16 that filtering portion 118 constitutes; But be not limited in this, that kind that also can be as shown in Figure 6 is provided with other high frequency cutoff with the resistance 44 in the above-mentioned filtering of the coil 130 replacements portion 118.That is, under these circumstances, filtering portion 118 is by constituting with coil 42,130 with as the capacitor 46 of capacity cell as the high frequency cutoff of sensing element.Under these circumstances, utilize two high frequency cutoff to cut off high frequency with coil 42,130.
In the case, sucker with switch portion 124 and bypass with the opening and closing operations of switch portion 110 with identical to the situation of the explanation that Fig. 2 did.Under the situation of this 3rd execution mode; Identical with the situation of above-mentioned first execution mode and second execution mode; Also can reduce when sucker electrode 114 applies direct voltage with the time constant of cutting off the equivalent electric circuit when being applied to the direct voltage on the sucker electrode 114; Consequently, can make the accumulating with the release of electric charge of electric charge of sucker electrode 114 promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.
But, compare with the situation of second execution mode, under the situation of this 3rd execution mode; Reduced the resistance 44 as the resistance components of filtering portion 118, correspondingly, time constant reduces; Consequently, electric charge accumulation time and charge discharge time can be shorter than the situation of second execution mode.
(the 4th execution mode)
Then, the 4th execution mode of putting platform mechanism in of the present invention year is described.Fig. 7 is the structure chart of major part that the 4th execution mode of platform mechanism was put in expression in of the present invention year.In addition, for the component part identical component part represented, mark identical reference marks and omit its explanation with Fig. 1, Fig. 5, Fig. 6 and Figure 16.
In above-mentioned the 3rd execution mode; The filtering portion 118 on the DC high-voltage power supply 120 of being connected is by constituting with coil 42,130 with as the capacitor 46 of capacity cell as the high frequency cutoff of sensing element; And make flip-flop testing circuit 96 bypass where necessary with the by-pass line 108 of switch portion 110 through being inserted with bypass midway; But be not limited in this, also can be as shown in Figure 7, above-mentioned by-pass line 108 and bypass are not set with switch portion 110.
In the case, sucker with the opening and closing operations of switch portion 124 with identical to the situation of the explanation that Fig. 2 did, but in this 4th execution mode, do not use the bypass shown in Fig. 2 (B) with switch portion 110.Under the situation of this 4th execution mode; Also the situation with above-mentioned first execution mode is identical; Can reduce when sucker electrode 114 applies direct voltage with the time constant of cutting off the equivalent electric circuit when being applied to the direct voltage on the sucker electrode 114; Consequently, the accumulating with the release of electric charge of electric charge that sucker electrode 114 is carried out promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.
But; Compare with the situation of the 3rd execution mode, under the situation of this 4th execution mode, increased the flip-flop (resistance 100,102) of flip-flop testing circuit 96; Correspondingly; Time constant increases, and consequently, the situation of electric charge accumulation time and charge discharge time ratio the 3rd execution mode is owed rapid property slightly.But, under the situation of this 4th execution mode, compare with existing apparatus shown in Figure 16; Through with the resistance 44 of high frequency cutoff with coil 130 replacement filtering portions 38, correspondingly, resistance components reduces; Therefore, its result is to shorten electric charge accumulation time and charge discharge time.
(the 5th execution mode)
Then, the 5th execution mode of putting platform mechanism in of the present invention year is described.Fig. 8 is the structure chart of major part that the 5th execution mode of platform mechanism was put in expression in of the present invention year.In addition, for the structure division identical structure division represented, mark identical reference marks and omit its explanation with Fig. 1.
In above-mentioned first～the 4th execution mode, be in ground state as the spray head 68 of upper electrode, but be not limited in this, also can spray on the head 68 and apply RF power at this.As representative, Fig. 8 illustrates the structure of using device shown in Figure 1 on spray head 68, to apply the situation of RF power, but in the structure of this explanation, can be applicable to all execution modes of first～the 4th.That is, as shown in Figure 8, at this, be installed in the top of container handling 52 across insulating element 134 as the spray head 68 of gas introducing mechanism.
And, on this spray head 68, be connected with high-frequency line 136, this high-frequency line 136 be inserted with match circuit 138 midway, and be connected with high frequency electric source 140 at the other end.The frequency of this high frequency electric source 140 can be used for example 450kHz etc.Consequently, in this 5th execution mode, can apply RF power through different separately power supplys respectively putting platform 84 as the spray head 68 of upper electrode with as carrying of lower electrode on the two.
In the case, sucker with switch portion 124 and bypass with the opening and closing operations of switch portion 110 with identical to the situation of the explanation that Fig. 2 did.Under the situation of this 5th execution mode; Identical with the situation of above-mentioned first execution mode; Also can reduce when sucker electrode 114 applies direct voltage with the time constant of cutting off the equivalent electric circuit when being applied to the direct voltage on the sucker electrode 114; Consequently, the accumulating with the release of electric charge of electric charge that sucker electrode 114 is carried out promptly carried out separately, can improve productivity ratio, the raising disposal ability of product.In addition, in this 5th execution mode, also can not be provided with to be connected and carry the high frequency electric source 92 (also comprising match circuit 90) put on the platform 84 and its omission.
(to the evaluation of the potential change of sucker electrode)
At this, to the time till begin after sucker electrode 114 applies voltage to reach setting voltage, the area (carrying the area of putting platform) of sucker electrode is changed and simulate to sucker electrode 114, below the evaluation result of this simulation is described.
Fig. 9 be expression from begin to sucker electrode apply voltages to till reaching setting voltage time with carry the figure put the long-pending relation of table top.At this; As the object of estimating, first execution mode shown in Figure 1 (make filter resistance change to coil and make flip-flop testing circuit bypass), second execution mode (making flip-flop testing circuit bypass) shown in Figure 5 and the 4th execution mode (making filter resistance change to coil) shown in Figure 7 have been enumerated.In addition, as comparative example, existing apparatus shown in Figure 16 is also estimated.
Fig. 9 (A) expression is from beginning to apply voltages to the time that reaches till reaching setting voltage to sucker electrode, the shortening ratio of the time that respectively reaches when Fig. 9 (B) expression is benchmark with time that reaches of existing apparatus.At this, make carry put table top long-pending (
Figure BSA00000229791700191
The sucker electrode area) at 0.2m 2～8.7m 2Between carry out various variations.In addition, will be set at 3000V to the voltage that sucker electrode 114 applies.
Shown in Fig. 9 (A), if from 0.2m 2To 8.7m 2Increase ground in order and set and carry that to put table top long-pending, the time that reaches that then reaches till the setting voltage is also elongated gradually.This is because at sucker electrode with carry and to put the capacitive component that forms between the platform and become big gradually.
At this, study carrying each execution mode put under the long-pending identical situation of table top, put that table top is long-pending to be 8.7m for example carrying 2Situation under, the time that reaches in first execution mode is 13.5sec, the time that reaches in second execution mode is 29.5sec, the time that reaches in the 4th execution mode is 44.3sec, comparative example is 58.3sec.Therefore, can be interpreted as that the respond well order of shortening that reaches the time does, the order of first execution mode, second execution mode and the 4th execution mode, wherein, first execution mode is best.Put that table top is long-pending to be 0.2m carrying 2～8.7m 2All situation under be not always the case.
At this, shown in Fig. 9 (B), if the time that reaches that is conceived to existing apparatus is the shortening ratio of the time that respectively reaches of benchmark, then with carry that to put table top long-pending irrelevant, be certain in each execution mode.That is, the shortening ratio of first execution mode with carry that to put table top long-pending irrelevant, be 23～25%, second execution mode the shortening ratio with carry that to put table top long-pending irrelevant, be the 51～53%, the 4th execution mode the shortening ratio with carry that to put table top long-pending irrelevant, be 76～78%.
Therefore; As stated; Because the shortening ratio that reaches the time with carry that to put table top long-pending (
Figure BSA00000229791700201
sucker electrode area) irrelevant and roughly certain; Put the long-pending big plasma processing apparatus of table top so carry, the time that is shortened is many more.Consequently; Can be interpreted as; Then can improve the above-mentioned shortening effect that reaches the time if apply the present invention to very significantly to for example being that the so large-area glass substrate of size carries out the such plasma processing apparatus of Cement Composite Treated by Plasma about 3m * 3m in length and breadth.
(the 6th execution mode)
Then, the 6th execution mode of putting platform mechanism in of the present invention year is described.Figure 10 is the structure chart of major part that the 6th execution mode of platform mechanism was put in expression in of the present invention year.In addition, for before the identical structure division of execution mode, mark identical reference marks and omit its explanation.
In each above execution mode, the output voltage of DC high-voltage power supply 120 is constant, for example is 3kV, but is not limited thereto, and also can make it possible to apply the multiple direct voltage that can switch output.And, accumulating on the sucker electrode 114 under the situation of electric charge, also can at first apply the high direct voltage of voltage; After after a while, switching; Apply the low direct voltage of common voltage, by this way, promptly carry out accumulate (charging) the electric charge of sucker electrode.
Figure 10 representes the major part of the 6th such execution mode.Shown in figure 10, in the 6th execution mode, DC high-voltage power supply 120 can be exported the multiple direct voltage that can switch and apply.At this, this DC high-voltage power supply 120 for example its output voltage can change, and for example can in the scope of 3kV～5kV, export the direct voltage of various voltages.Particularly, at this of the back, the 3kV of the rated voltage when using and than this higher voltage 5kV as the applying usually of sucker electrode 114.
In addition; In this 6th execution mode; Supply lines 116 midway and the filtering portion 118 that is constituting by resistive element 160 and sucker with switch portion 124 between, have the current potential supervision portion 150 of the current potential that is used to detect sucker electrode 114 sides and control the power control part 152 of above-mentioned DC high-voltage power supply 120 according to the output valve of this current potential supervision portion 150.
Above-mentioned current potential supervision portion 150 is formed by resistive element etc. because be difficult to directly detect the current potential of sucker electrode 114, so, this be plugged in filtering portion 118 and sucker with the supply lines between the switch portion 124 116 on.Therefore, the detected value of this current potential supervision portion 150 can be avoided the ground occurrence of errors, and this margin of error is the amount of the voltage drop in the filtering portion 118 of its downstream (sucker electrode 114 sides).In addition, though in the device of reality, need big design variation, also can the supply lines 116 that more relies on the downstream than filtering portion 118 this current potential supervision portion 150 is set midway, in this case, can eliminate the margin of error of the voltage drop of filtering portion 118.
In addition; When sucker is closed with switch portion 124; Above-mentioned power control part 152 receives the signal of its affirmation from above-mentioned switch control part 112; And when the detected value of sending here from above-mentioned current potential supervision portion 150 reaches the value of regulation, from high first direct voltage of voltage for example 5kV switch to for example 3kV of the second low direct voltage of voltage, the line output of going forward side by side.
Then, the action to above-mentioned the 6th execution mode describes.At first, before the concrete action of explanation, the variation of current potential is described; Wherein, This current potential is meant, on sucker electrode 114, applies the current potential of high voltage, the above-mentioned current potential supervision portion 150 when switching to low-voltage afterwards at first, i.e. the current potential at the some P1 place among Figure 10.Figure 11 is the chart as the variation of the current potential of the some P1 of current potential supervision portion of expression after sucker electrode applies direct voltage; In Figure 11 (A); Represented to apply the variation under the situation that the constant DC of 3kV presses with solid line; In Figure 11 (B), only represent initial to apply the direct voltage of 5kV during very short, to switch to variation under the situation that 3kV applies afterwards with solid line.At this, as the characteristic of sucker electrode 114, its size is 3m * 3m in length and breadth, and rated voltage is 3kV.In addition, in Figure 11, represent the experience predicted value of the current potential of sucker electrode 114 with the single-point line.
Shown in Figure 11 (A); On the sucker electrode 114 from having begun at first to have applied under the situation that constant DC presses with 3kV; Along with accumulating of the electric charge on sucker electrode 114; The current potential of point P1 rises along with the time constant of its circuit gradually, through reaching 3kV after the time to a certain degree and settling out.At this, reach that the needed time is about 15sec till the 3kV identical with the rated voltage of sucker electrode 114.In addition, applying voltage and be similarly 3kV, is to be 9.8sec under the situation of 2.2m * 2.5m in the size of sucker electrode 114, and size is to be 8.0sec under the situation of 2.0m * 2.3m.
Relative therewith, shown in Figure 11 (B), only T4 applies 5kV, the i.e. direct voltage of the voltage higher than the rated voltage of sucker electrode 114 (first direct voltage) to sucker electrode 114 during initial regulation; Then, after after a while, apply 3kV, be the low direct voltage of voltage (second direct voltage); Under these circumstances, the current potential of some P1 rises than the situation of Figure 11 (A) more hastily, and; Before being about to switching, reach the for example peak value about 4kV, switch to low-voltage through T4 during the regulation, thus; The current potential of point P1 reaches 3kV and stable through reducing gradually after the peak value.
At this, be conceived to the current potential of sucker electrode 114, can know; When the current potential of a P1 was the 4kV left and right sides, the current potential of sucker electrode 114 reached the 3kV as rated voltage, at this moment; Through switching to the direct voltage of 3kV, it is constant the current potential of sucker electrode 114 to be remained on 3kV.In this 6th execution mode, use aforesaid characteristic, the current potential of sucker electrode 114 is risen.
Then, the action to the 6th execution mode that uses above-mentioned characteristic shown in Figure 11 describes.Figure 12 is the voltage, the sequential chart of variation that sucker applies voltage of the moment and current potential supervision portion 150 of the switching of each switch portion of expression, and Figure 13 is the flow chart that is used for explaining the action of the 6th execution mode.
In Figure 12, the sucker of Figure 12 (A) is with the on-off action of switch portion 124, the bypass situation that applies with the RF power of the current potential of the sucker electrode 114 of the on-off action of switch portion 110, Figure 12 (C), Figure 12 (D), and the situation with shown in Figure 2 is identical respectively.And Figure 12 (E) representes that by current potential supervision portion 150 detected current potentials Figure 12 (F) expression applies voltage by the sucker of DC high-voltage power supply 120 outputs.
At first, the bypass midway that switch control part 112 is arranged on by-pass line 108 through closure makes to carry and puts platform 84 ground connection (S1) with switch portion 110.Then, the sucker midway that switch control part 112 is arranged on supply lines 116 through closure begins to apply first direct voltage, be the high direct voltage 5kV (S2) of voltage from 120 pairs of sucker electrodes 114 of DC high-voltage power supply with switch portion 124.In addition, also can carry out step S1 and step S2 simultaneously.
Begin constantly from this, get into as before at state illustrated in fig. 11.That is, through applying 5kV, sucker electrode 114 is promptly charged, its current potential rises sharp.In addition, during with switch portion 124, with this purport notice power control part 152, this is in order to prevent the misoperation of power control part 152 to switch control part 112 at closed sucker.
Then; Current potential supervision portion 150 detected current potentials midway by being arranged on supply lines 116 are transfused to power control part 152; This power control part 152 judges by above-mentioned current potential supervision portion 150 detected current potentials whether reach predetermined setting, for example 4kV; And standby is to reaching 4kV (NO of S3); If reached 4kV (YES of S3) here, then control DC high-voltage power supply 120, switching to than its low voltage from first direct voltage (5kV) is that second direct voltage (3kV) applies (S4).This 3kV is the rated voltage of sucker electrode 114.The current potential of the sucker electrode 112 of this moment is about the 3kV of rated voltage as shown in Figure 11, therefore, can more promptly charge to rated voltage.
In addition, at this, apply 5kV direct voltage during T4, as shown in Figure 11, the result is about 4sec.Wherein, the time of 4sec will change according to the size of electrostatic chuck 86 and the size of first direct voltage etc. certainly.
Like this; After switching to second direct voltage; Up to carry the official hour T5 of the current potential put on the platform 84 till stable, for example about 5～10sec during (NO of S5) standby; If carried out the standby (YES of S5) of the time T 5 of afore mentioned rules, then then make bypass use switch portion 110 to be open mode, cut off and carry the ground connection (S6) of putting platform 84.The time T 5 of afore mentioned rules is meant, as stated, to the current potential of putting platform 84 in above-mentioned year stable till the needed time.Then, then put platform 84 and apply high frequency voltage (S7), carry out Cement Composite Treated by Plasma from high frequency electric source 92 to carrying.
Like this, in this 6th execution mode, with electric charge accumulation (charging) in 114 last times of sucker electrode; Apply the first high direct voltage of voltage (for example 5kV) at first; Then, after after a while, apply second direct voltage (for example 3kV) that above-mentioned first direct current of voltage ratio forces down; Therefore, can more promptly carry out charging to sucker electrode 114.In Figure 12 (C), with the variation of the current potential of the sucker electrode 114 of the situation of single-point line presentation graphs 2 (C), compare with the situation of Fig. 2 (C), accomplish and can accelerate about 10sec to the charging of sucker electrode 114.In addition, this 6th execution mode except the 4th execution mode of Fig. 7 that by-pass line 108 is not set, to before all execution modes of the first～the 3rd and the 5th can both use.
(the 7th execution mode)
The 7th execution mode of mounting table structure of the present invention then, is described.Figure 14 is the structure chart of major part of the 7th execution mode of expression mounting table structure of the present invention.In addition, for before the identical structure division of the 6th execution mode, mark identical reference marks and omit its explanation.
In the 6th execution mode shown in Figure 10, in the current potential supervision portion 150 that is provided with of supply lines 116 midway, with reference to this detected value; The switching of the direct voltage that power control part 152 applies; But, be not limited only to this, in this 7th execution mode; Making above-mentioned sucker use switch portion 124 to be the instrumentation time after the closure state, when having passed through the regular hour, switch the direct voltage that applies.
Promptly; Shown in figure 14; At this, on supply lines 116, be not provided with like current potential supervision portion 150 set in Figure 10, make power control part 152 have timer function (not shown) for it; Will from switch control part 112 receive closed sucker with time of the signal of the purport of switch portion 124 as starting point, utilize above-mentioned timer function to measure elapsed time.Then, the situation of having been passed through official hour the instrumentation time of this timer function responds, and 152 pairs of DC high-voltage power supplies 120 of this power control part send instruction, make it switch to second direct voltage (3kV) from first direct voltage (5kV) and export.
At this, the official hour that is used for above-mentioned switching is meant, till begin after sucker electrode 114 applies first direct voltage to reach rated voltage to the current potential of this sucker electrode 114 during below length.At this, as asking, be set to for example 4sec during the afore mentioned rules from chart shown in Figure 11.Through be made up of filtering portion 118 sensing element, the time of this 4sec can further shorten, and as previously mentioned, it changes according to the size of sucker electrode 114 and the size of first direct voltage etc., and in addition, the setting of the time of afore mentioned rules is also variable.
The action of the 7th execution mode; In the step S3 of the flow chart of the 6th execution mode shown in Figure 13; Replace the judgement of the detected value of current potential supervision portion 150; After closed sucker is with switch portion 124, judge " having passed through official hour? ", except that this some difference, each step of other of the action of the 7th execution mode is identical with flow chart shown in Figure 13.In addition, also the sequential chart with shown in Figure 13 is identical for the state of the variation of the switching time of each switch portion and each voltage.In addition, this 7th execution mode except the 4th execution mode of Fig. 7 that by-pass line 108 is not set, to before all execution modes of the first～the 3rd and the 5th can both use.
But; In Figure 10 and the 6th, the 7th execution mode shown in Figure 14, used the variable power supply that output voltage is changed as DC high-voltage power supply 120, but also can substitute it; The variation of DC high-voltage power supply shown in figure 15 is such; Parallel connection is provided with the first power supply unit 154A and the 154B of second source portion, and wherein, the first power supply unit 154A exports first direct voltage, for example 5kV; The 154B of second source portion exports second direct voltage, for example 3kV, through by the switch portion 156 of power control part 152 controls the output of these two power supply unit 154A, 154B being switched.Certainly, at this, above-mentioned 5kV and 3kV just represent an example respectively, and these numerical value are not defined.
In addition; In above-mentioned Figure 10 and the 6th execution mode and the 7th execution mode shown in Figure 14, understand easily in order to make the present invention, switch control part 112 and power control part 152 are provided with respectively as two parts; But, can certainly they be set to one.
In addition; In each above execution mode; As Cement Composite Treated by Plasma; With the plasma etch process is that example is illustrated, and still, can apply the present invention to possess electrostatic chuck and generate plasma through RF power and carry out in all plasma processing apparatus of Cement Composite Treated by Plasma.In addition, in each above execution mode, heating arrangements is not set carrying to put on the platform 84, for example is provided with on the platform 84 that resistance heater is heated to handled object the temperature of regulation as heating arrangements but can put in this year yet.
In addition; Here, as handled object, the glass substrate that uses with the liquid crystal indicator as insulant is illustrated as example; But be not limited in this, also can go up application the present invention at the substrate or the semiconductor wafer (semiconductor substrate) of other insulants such as ceramic substrate.

Claims (13)

1. one kind carries and to put platform mechanism, and being arranged on can be by in the container handling of vacuum exhaust, carries the handled object of putting the Cement Composite Treated by Plasma that plasma that utilization produces through RF power stipulates, puts platform mechanism this year and is characterised in that, comprising:
Be used for carrying put said handled object, put platform by carrying of constituting of conductive component;
Be configured in the upper surface of putting platform in said year, the electrostatic chuck of sucker electrode is arranged in set inside in order to adsorb said handled object;
Be connected the DC high-voltage power supply on the said sucker electrode in order to apply the direct voltage that produces electrostatic force via supply lines, be used to the filtering portion that stops RF power to get into midway being provided with of this supply lines;
Be plugged in said supply lines midway, the sucker that is closed during said handled object in absorption uses switch portion;
To be applied to said year when the said Cement Composite Treated by Plasma and to put the flip-flop on the platform and be connected the flip-flop testing circuit of putting in said year on the platform in order to detect; With
Control the switch control part of said sucker with switch portion,
Said filtering portion does not comprise resistive element and is formed by capacity cell and sensing element.
2. put platform mechanism, and it is characterized in that in as claimed in claim 1 year:
Said DC high-voltage power supply can apply the multiple direct voltage that can be switched,
Also comprise:
Be arranged on said supply lines midway, be used to keep watch on the current potential supervision portion of the current potential of said sucker electrode side; With
Power control part; Said DC high-voltage power supply is controlled; Make when said sucker is closed with switch portion, to apply the first high direct voltage of voltage in the said multiple direct voltage, and switch to the second low direct voltage of voltage at the detected value of said current potential supervision portion during for the value of regulation and apply.
3. put platform mechanism, and it is characterized in that in as claimed in claim 1 year:
Said DC high-voltage power supply can apply the multiple direct voltage that can switch,
Also comprise the power control part of controlling said DC high-voltage power supply; Said power control part is controlled; Make when said sucker is closed with switch portion; Apply the first high direct voltage of voltage in the said multiple direct voltage at first, when having passed through official hour, switch to the second low voltage of voltage and apply.
4. put platform mechanism, and it is characterized in that in as claimed in claim 3 year:
Said official hour is, till beginning after said sucker electrode applies said direct voltage to reach rated voltage to the current potential of said sucker electrode during below length.
5. put platform mechanism, and it is characterized in that in as claimed in claim 2 year;
Said first direct voltage is set to higher than the rated voltage of said sucker electrode, and said second direct voltage is set to said rated voltage.
6. put platform mechanism, and it is characterized in that in as claimed in claim 2 year:
The output voltage of said DC high-voltage power supply is made into variable, makes it possible to export said first direct voltage and said second direct voltage.
7. put platform mechanism, and it is characterized in that in as claimed in claim 2 year:
Said DC high-voltage power supply has the second source portion of first power supply unit with said second direct voltage of output of said first direct voltage of output.
8. put platform mechanism, and it is characterized in that in as claimed in claim 1 year;
Said handled object is an insulant.
9. plasma processing apparatus, the Cement Composite Treated by Plasma to handled object is stipulated is characterized in that, comprising:
Can be by the container handling of vacuum exhaust;
Be used in said container handling, importing the gas introducing mechanism of necessary gas;
To carrying out the exhaust gear of vacuum exhaust in the said container handling; With
Be used for said container handling contain put said handled object, claim 1～8 put platform mechanism in described year.
10. plasma processing apparatus as claimed in claim 9 is characterized in that;
Said gas introducing mechanism comprises the spray head, by this spray head with put carrying of platform mechanism in said year and put upper electrode and the lower electrode that platform forms parallel plate-type.
11. plasma processing apparatus as claimed in claim 10 is characterized in that:
Put at said year and to be connected with high frequency electric source on the platform.
12. plasma processing apparatus as claimed in claim 9 is characterized in that;
Be connected with second high frequency electric source at said spray head.
13. plasma processing apparatus as claimed in claim 9 is characterized in that:
Said handled object is semiconductor substrate or insulant substrate.
CN2010102535313A 2008-05-21 2009-05-21 Loading stage mechanism and plasma processing apparatus using the same Active CN101908459B (en)

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CN101587813B (en) 2011-06-22
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CN101587813A (en) 2009-11-25
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