JP7020311B2 - Board processing equipment and board processing method - Google Patents

Board processing equipment and board processing method Download PDF

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JP7020311B2
JP7020311B2 JP2018113686A JP2018113686A JP7020311B2 JP 7020311 B2 JP7020311 B2 JP 7020311B2 JP 2018113686 A JP2018113686 A JP 2018113686A JP 2018113686 A JP2018113686 A JP 2018113686A JP 7020311 B2 JP7020311 B2 JP 7020311B2
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康史 宇津木
利洋 東条
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    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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Description

本開示は、基板処理装置及び基板処理方法に関する。 The present disclosure relates to a substrate processing apparatus and a substrate processing method.

フラットパネルディスプレイ（Flat Panel Display：ＦＰＤ）の製造工程においては、基板に対してプラズマを用いてエッチング処理や成膜処理を行うプロセスがある。このプロセスは、真空容器内の載置台に基板を載置し、この載置台の上方の空間に供給された処理ガスに高周波エネルギーを与えて、例えば容量結合プラズマや誘導結合プラズマを発生させることにより行われる。このような装置に用いられる載置台には、例えば静電チャックと呼ばれる基板の固定機構が設けられる場合がある。静電チャックは、誘電体層内に静電吸着電極が配置された構成となっており、静電吸着電極に直流電圧を印加することにより、静電吸着力によって、基板が載置台上に保持される。 In the manufacturing process of a flat panel display (FPD), there is a process of performing an etching process or a film forming process on a substrate by using plasma. This process involves placing the substrate on a mounting table in a vacuum vessel and applying high frequency energy to the processing gas supplied to the space above the mounting table to generate, for example, capacitively coupled plasma or inductively coupled plasma. Will be done. The mounting table used in such a device may be provided with a substrate fixing mechanism called, for example, an electrostatic chuck. The electrostatic chuck has a configuration in which electrostatic adsorption electrodes are arranged in a dielectric layer, and by applying a DC voltage to the electrostatic adsorption electrodes, the substrate is held on the mounting table by the electrostatic adsorption force. Will be done.

特許文献１には、基板を載置台に静電吸着するにあたって、静電吸着電極に供給される直流電圧を監視することで、基板の載置台からの剥離を検知する技術が記載されている。本技術では、監視している直流電圧が、予め設定されたしきい値を越えたときに、載置台から基板が剥離したと判断し、プラズマ生成用高周波電源への高周波電力を停止する。 Patent Document 1 describes a technique for detecting peeling of a substrate from the mounting table by monitoring the DC voltage supplied to the electrostatic adsorption electrode when the substrate is electrostatically adsorbed on the mounting table. In this technology, when the monitored DC voltage exceeds a preset threshold value, it is determined that the substrate has peeled off from the mounting table, and the high-frequency power to the high-frequency power supply for plasma generation is stopped.

特開２０１６－１７４０８１号公報Japanese Unexamined Patent Publication No. 2016-174081

本開示は、大型の基板の載置台からの部分的な剥離を精度よく検知する技術を提供する。 The present disclosure provides a technique for accurately detecting partial peeling of a large substrate from a mounting table.

本開示の一態様による基板処理装置は、
基板に対して処理ガスを用いた基板処理を行うための真空容器内に設けられ、処理対象の基板が載置される載置台と、
前記載置台に設けられた誘電体層内に形成され、前記載置台に載置された基板の周縁部を静電吸着するために、前記周縁部の平面形状に対応して設けられた第１の静電吸着電極と、
前記載置台に設けられた誘電体層内に、前記第１の静電吸着電極とは分離して形成され、前記載置台に載置された基板の中央部を静電吸着するために、前記中央部の形状に対応して設けられた第２の静電吸着電極と、
前記第１の静電吸着電極、及び第２の静電吸着電極に、各々、予め設定された電圧設定値に対応する直流電圧を印加する第１の直流電源、及び第２の直流電源と、
前記第１の静電吸着電極に印加される直流電圧を測定する電圧測定部と、
前記電圧測定部にて測定された直流電圧が予め設定されたしきい値を超えた場合に、前記第１の静電吸着電極を用いて静電吸着されている基板の剥離が発生したことを検知する剥離検知部と、を備えたことを特徴とする。 The substrate processing apparatus according to one aspect of the present disclosure is
A mounting table provided in a vacuum container for processing a substrate using a processing gas and on which the substrate to be processed is placed, and
A first unit formed in the dielectric layer provided on the above-mentioned pedestal and provided corresponding to the planar shape of the rim portion in order to electrostatically adsorb the peripheral portion of the substrate mounted on the above-mentioned pedestal. Electrostatic adsorption electrode and
In order to electrostatically adsorb the central portion of the substrate mounted on the above-mentioned pedestal, which is formed separately from the first electrostatic adsorption electrode in the dielectric layer provided on the above-mentioned pedestal. A second electrostatic adsorption electrode provided corresponding to the shape of the central part,
A first DC power supply and a second DC power supply that apply a DC voltage corresponding to a preset voltage set value to the first electrostatic adsorption electrode and the second electrostatic adsorption electrode, respectively.
A voltage measuring unit that measures the DC voltage applied to the first electrostatic adsorption electrode, and
When the DC voltage measured by the voltage measuring unit exceeds a preset threshold value, it is determined that the substrate electrostatically adsorbed by the first electrostatic adsorption electrode has peeled off. It is characterized by being provided with a peeling detection unit for detecting.

本開示によれば、大型の基板の載置台からの部分的な剥離を精度よく検知することができる。 According to the present disclosure, it is possible to accurately detect partial peeling of a large substrate from a mounting table.

本開示の基板処理装置の第１の実施形態の構成を説明する縦断側面図である。It is a vertical sectional side view explaining the structure of 1st Embodiment of the substrate processing apparatus of this disclosure. 前記基板処理装置に設けられる第１の静電吸着電極及び第２の静電吸着電極の構成例を説明する平面図である。It is a top view explaining the structural example of the 1st electrostatic adsorption electrode and the 2nd electrostatic adsorption electrode provided in the substrate processing apparatus. 前記第１の静電吸着電極、第２の静電吸着電極及び基板を示す概略縦断側面図である。It is a schematic longitudinal side view which shows the 1st electrostatic adsorption electrode, the 2nd electrostatic adsorption electrode, and a substrate. 本開示の基板処理方法を説明するフローチャートである。It is a flowchart explaining the substrate processing method of this disclosure. ソース電力、バイアス電力及び第１の静電吸着電極の直流電圧値の時間変化を示す特性図である。It is a characteristic diagram which shows the time change of the source power, the bias power, and the DC voltage value of the 1st electrostatic adsorption electrode. 本開示の基板処理装置の第２の実施形態を説明する平面図である。It is a top view explaining the 2nd Embodiment of the substrate processing apparatus of this disclosure. 本開示の基板処理装置の第３の実施形態を説明する平面図である。It is a top view explaining the 3rd Embodiment of the substrate processing apparatus of this disclosure.

本開示の基板処理装置１の第１の実施形態について説明する。図１に示すように基板処理装置１は、接地電位に接続された、例えばアルミニウムまたはステンレス製の真空容器１０を備えている。真空容器１０の側面には、処理対象である基板例えば矩形のガラス基板（以下「基板」という）Ｇを受け渡すための搬入出口１１が形成されている。図中の符号１２は搬入出口１１を開閉するゲートバルブを指している。また、真空容器１０の下方の側面には排気口１３が開口しており、排気口１３には、排気管１４を介して真空排気部１５が接続されている。 A first embodiment of the substrate processing apparatus 1 of the present disclosure will be described. As shown in FIG. 1, the substrate processing apparatus 1 includes a vacuum vessel 10 made of, for example, aluminum or stainless steel, which is connected to a ground potential. On the side surface of the vacuum container 10, a carry-in outlet 11 for delivering a substrate to be processed, for example, a rectangular glass substrate (hereinafter referred to as “substrate”) G is formed. Reference numeral 12 in the figure indicates a gate valve that opens and closes the carry-in outlet 11. Further, an exhaust port 13 is opened on the lower side surface of the vacuum container 10, and a vacuum exhaust unit 15 is connected to the exhaust port 13 via an exhaust pipe 14.

真空容器１０の内部には、その下方側に、基板Ｇが載置される載置台３が配置されている。基板Ｇとしては、平面視長方形状であって、長辺が３．３７ｍ、短辺が２．９４ｍの第１０世代いわゆるＧ１０と呼ばれる大型の矩形基板を例示できる。載置台３は、平面形状が矩形である角柱状に構成されており、その詳しい構成については後述する。 Inside the vacuum container 10, a mounting table 3 on which the substrate G is placed is arranged below the vacuum container 10. As the substrate G, a large rectangular substrate of the 10th generation, so-called G10, which has a rectangular shape in a plan view and has a long side of 3.37 m and a short side of 2.94 m can be exemplified. The mounting table 3 is configured in a prismatic shape having a rectangular planar shape, and the detailed configuration thereof will be described later.

真空容器１０の上方には、載置台３と対向するように、誘電体若しくは、金属からなる図示しない窓部材を介してプラズマ形成部である渦巻き状の誘導結合アンテナ５０が設けられている。誘導結合アンテナ５０には、プラズマ生成用のソース電源（高周波電力供給部）５２が整合器５１を介して接続されている。ソース電源５２から誘導結合アンテナ５０にソース電力（プラズマを発生させるための高周波電力）を供給することで、真空容器１０内にプラズマ発生用の電界が発生される。 Above the vacuum vessel 10, a spiral inductively coupled antenna 50, which is a plasma forming portion, is provided via a window member (not shown) made of a dielectric or a metal so as to face the mounting table 3. A source power source (high frequency power supply unit) 52 for plasma generation is connected to the inductively coupled antenna 50 via a matching unit 51. By supplying source power (high frequency power for generating plasma) from the source power source 52 to the inductively coupled antenna 50, an electric field for plasma generation is generated in the vacuum vessel 10.

真空容器１０における、誘導結合アンテナ５０及び不図示の窓部材の下方には、真空容器１０内に処理ガスを供給するためのシャワーヘッド２が絶縁部１６を介して設けられている。シャワーヘッド２の内部はガス分散室２０として形成されている。また、シャワーヘッド２の下面は、載置台３の載置面と対向するように形成されると共に、多数のガス供給孔２１を備えている。さらに、シャワーヘッド２の上面には、ガス分散室２０へ向けて処理ガスを供給するための処理ガス供給管２２が接続されている。処理ガス供給管２２には、例えばＣＦ４やＣｌ２などのエッチングガスを含む処理ガスを供給するための処理ガス供給源２３、流量調整部Ｍ２２、及びバルブＶ２２が、上流側からこの順で設けられている。 Below the inductively coupled antenna 50 and the window member (not shown) in the vacuum vessel 10, a shower head 2 for supplying a processing gas into the vacuum vessel 10 is provided via an insulating portion 16. The inside of the shower head 2 is formed as a gas dispersion chamber 20. Further, the lower surface of the shower head 2 is formed so as to face the mounting surface of the mounting table 3, and is provided with a large number of gas supply holes 21. Further, a processing gas supply pipe 22 for supplying the processing gas to the gas dispersion chamber 20 is connected to the upper surface of the shower head 2. The processing gas supply pipe 22 is provided with a processing gas supply source 23 for supplying a processing gas containing an etching gas such as CF 4 or Cl 2 , a flow rate adjusting unit M22, and a valve V22 in this order from the upstream side. Has been done.

載置台３は、導体からなるサセプタ３１と、基板Ｇを静電吸着により固定するための静電チャック４と、を下方からこの順番に積層した構造となっている。サセプタ３１は、真空容器１０の底面における中央部に絶縁層３０を介して設けられたスペーサー３３上に設置され、サセプタ３１及びスペーサー３３の側面は例えばセラミック製のカバー３５により覆われている。サセプタ３１には、配線５３により整合器５４を介してバイアス電源（高周波電力供給部）５５が接続されている。このバイアス電源５５によりサセプタ３１に高周波電力であるバイアス電力を印加すると、プラズマにより真空容器１０内に生じた処理ガスの活性種を載置台３に載置した基板Ｇに引き込むことができる。 The mounting table 3 has a structure in which a susceptor 31 made of a conductor and an electrostatic chuck 4 for fixing the substrate G by electrostatic adsorption are laminated in this order from the bottom. The susceptor 31 is installed on a spacer 33 provided at the center of the bottom surface of the vacuum vessel 10 via an insulating layer 30, and the side surfaces of the susceptor 31 and the spacer 33 are covered with, for example, a ceramic cover 35. A bias power supply (high frequency power supply unit) 55 is connected to the susceptor 31 via a matching device 54 by wiring 53. When the bias power, which is a high frequency power, is applied to the susceptor 31 by the bias power supply 55, the active species of the processing gas generated in the vacuum vessel 10 by the plasma can be drawn into the substrate G placed on the mounting table 3.

載置台３の内部には伝熱ガス供給路３２が形成され、その下流側の端部は、複数に分岐して、載置台３の上面に分散して開口することにより、複数の伝熱ガス供給口を構成している。なお、図面の煩雑化を防ぐために、図１では一部の伝熱ガス供給口を示し、図３では、静電チャック４における伝熱ガス供給路３２は図示を省略している。伝熱ガス供給路３２の上流側は、真空容器１０の外部に設けられた伝熱ガス供給管３６により、流量調整部３７を介して伝熱ガス供給源３８に接続されている。 A heat transfer gas supply path 32 is formed inside the mounting table 3, and the end portion on the downstream side thereof is branched into a plurality of heat transfer gas by being dispersed and opened on the upper surface of the mounting table 3. It constitutes a supply port. In order to prevent the drawings from becoming complicated, a part of the heat transfer gas supply port is shown in FIG. 1, and the heat transfer gas supply path 32 in the electrostatic chuck 4 is not shown in FIG. The upstream side of the heat transfer gas supply path 32 is connected to the heat transfer gas supply source 38 via the flow rate adjusting unit 37 by a heat transfer gas supply pipe 36 provided outside the vacuum vessel 10.

スペーサー３３の内部には、例えば周方向に延びる環状の冷媒流路３４が設けられている。この冷媒流路３４には、チラーユニット（図示せず）により所定温度に調整された熱伝導媒体が循環供給され、熱伝導媒体の温度によって基板Ｇの処理温度を制御できるように構成されている。また、載置台３には、外部の搬送アームとの間で基板Ｇを受け渡すための図示しない昇降ピンが、載置台３及び真空容器１０の底板部を垂直方向に貫通し、載置台３の表面から突没するように設けられている。 Inside the spacer 33, for example, an annular refrigerant flow path 34 extending in the circumferential direction is provided. A heat conduction medium adjusted to a predetermined temperature is circulated and supplied to the refrigerant flow path 34 by a chiller unit (not shown), and the processing temperature of the substrate G can be controlled by the temperature of the heat conduction medium. .. Further, on the mounting table 3, an elevating pin (not shown) for transferring the substrate G to and from the external transport arm vertically penetrates the bottom plate portion of the mounting table 3 and the vacuum container 10, and the mounting table 3 has a mounting table 3. It is provided so as to sink from the surface.

続いて、静電チャック４について説明する。静電チャック４は、上層の誘電体層４１と下層の誘電体層４２との間に、静電吸着電極４３を挟んだ構造を成している。誘電体層４１、４２は、例えばアルミナ（Ａｌ２Ｏ３）などのセラミックスにより成り、静電吸着電極４３は、例えば金属により構成されている。 Subsequently, the electrostatic chuck 4 will be described. The electrostatic chuck 4 has a structure in which an electrostatic adsorption electrode 43 is sandwiched between an upper dielectric layer 41 and a lower dielectric layer 42. The dielectric layers 41 and 42 are made of ceramics such as alumina (Al 2 O 3 ), and the electrostatic adsorption electrode 43 is made of metal, for example.

静電吸着電極４３は、第１の静電吸着電極４４と、第２の静電吸着電極４５と、を含んでいる。第１の静電吸着電極４４（以下「第１の電極」という）は、載置台３に載置された基板Ｇの周縁部を静電吸着するために、前記周縁部の平面形状に対応して設けられている。第２の静電吸着電極４５（以下「第２の電極」という）は、第１の電極４４とは絶縁部材を介して電気的に分離して形成され、載置台３に載置された基板Ｇの中央部を静電吸着するために、前記中央部の形状に対応して設けられている。 The electrostatic adsorption electrode 43 includes a first electrostatic adsorption electrode 44 and a second electrostatic adsorption electrode 45. The first electrostatic adsorption electrode 44 (hereinafter referred to as “first electrode”) corresponds to the planar shape of the peripheral edge portion in order to electrostatically adsorb the peripheral edge portion of the substrate G mounted on the mounting table 3. It is provided. The second electrostatic adsorption electrode 45 (hereinafter referred to as “second electrode”) is formed by being electrically separated from the first electrode 44 via an insulating member, and is mounted on the mounting table 3. In order to electrostatically adsorb the central portion of G, it is provided corresponding to the shape of the central portion.

図２は、第１の電極４４及び第２の電極４５の構成例を示す平面図であり、第１の電極４４は、矩形基板の辺部に沿った環状の平面形状に対応して、平面視矩形の環状に形成されている。第１の電極４４の外縁は、例えば載置台３に載置される基板Ｇの外縁とほぼ同じか、基板Ｇの外縁よりも多少外側又は内側に位置するように設定されている。この例では、第１の電極４４の外縁は、基板Ｇの外縁と揃うように形成され、図２では、後述する基板Ｇの剥離領域Ｐを点線の斜線にて投影して示している。 FIG. 2 is a plan view showing a configuration example of the first electrode 44 and the second electrode 45, and the first electrode 44 is a flat surface corresponding to an annular planar shape along a side portion of a rectangular substrate. It is formed in an annular shape with a viewing rectangle. The outer edge of the first electrode 44 is set to be substantially the same as, for example, the outer edge of the substrate G mounted on the mounting table 3, or slightly outside or inside the outer edge of the substrate G. In this example, the outer edge of the first electrode 44 is formed so as to be aligned with the outer edge of the substrate G, and in FIG. 2, the peeling region P of the substrate G, which will be described later, is projected by a dotted diagonal line.

第１の電極４４の面積は、例えば４．２ｍ２以下となるように形成されている。このように第１の電極４４の面積が４．２ｍ２以下であることが好ましいのは、後述するように、電極の面積が大きくなると、基板Ｇの剥離を感知する感度が低下するためである。上記４．２ｍ２の面積は基板Ｇの大きさと、基板Ｇの剥離の検知精度との関係から、経験的に得た値である。このように、第１の電極４４は、面積が小さいことが好ましく、このため、第１の電極４４の面積は、第２の電極４５の面積よりも小さく設定されることが好ましい。 The area of the first electrode 44 is formed so as to be, for example, 4.2 m 2 or less. The reason why the area of the first electrode 44 is preferably 4.2 m 2 or less is that, as will be described later, as the area of the electrodes increases, the sensitivity for detecting the peeling of the substrate G decreases. .. The area of 4.2 m 2 is a value empirically obtained from the relationship between the size of the substrate G and the detection accuracy of peeling of the substrate G. As described above, the area of the first electrode 44 is preferably small, and therefore the area of the first electrode 44 is preferably set smaller than the area of the second electrode 45.

第２の電極４５は平面視矩形状に形成され、第１の電極４４の内側に、第１の電極４４と離間して配置されている。第１の電極４４と第２の電極４５との離間距離は、環状の離間領域が第１の電極４４と第２の電極４５とを電気的に分離することが可能な値に設定される。前記離間距離は、例えば５ｍｍ～３０ｍｍである。また、第２の電極４５の面積は、第２の電極４５により基板Ｇの中央部を十分に静電吸着可能な大きさに設定される。なお、第２の電極４５の平面形状は矩形状に限定されるものではなく、例えば基板Ｇの長辺方向に沿って細長い楕円形状であってもよい。 The second electrode 45 is formed in a rectangular shape in a plan view, and is arranged inside the first electrode 44 at a distance from the first electrode 44. The separation distance between the first electrode 44 and the second electrode 45 is set to a value at which the annular separation region can electrically separate the first electrode 44 and the second electrode 45. The separation distance is, for example, 5 mm to 30 mm. Further, the area of the second electrode 45 is set to a size that allows the central portion of the substrate G to be sufficiently electrostatically adsorbed by the second electrode 45. The planar shape of the second electrode 45 is not limited to a rectangular shape, and may be, for example, an elongated elliptical shape along the long side direction of the substrate G.

第１の電極４４は、電圧調整用の抵抗６２が設けられた第１の配線６１を介して第１の直流電源６３に接続されている。また、第２の電極４５は、電圧調整用の抵抗６５が設けられた第２の配線６４を介して第２の直流電源６６に接続されている。第１の直流電源６３及び第２の直流電源６６は、電圧設定値に基づき、第１の電極４４及び第２の電極４５に、夫々例えば０～６０００Ｖの範囲内の予め設定された直流電圧を印加できるように構成されている。 The first electrode 44 is connected to the first DC power supply 63 via the first wiring 61 provided with the voltage adjusting resistor 62. Further, the second electrode 45 is connected to the second DC power supply 66 via the second wiring 64 provided with the voltage adjusting resistor 65. The first DC power supply 63 and the second DC power supply 66 each apply a preset DC voltage in the range of, for example, 0 to 6000 V to the first electrode 44 and the second electrode 45 based on the voltage set value. It is configured so that it can be applied.

こうして、第１の直流電源６３及び第２の直流電源６６から夫々予め設定された電圧設定値に対応する直流電圧が印加されると、第１の電極４４及び第２の電極４５は静電気力によって載置台３に載置された基板Ｇを静電吸着する。また、第１の配線６１には、例えば２つの抵抗６２の間に、第１の電極４４に印加される直流電圧を測定する電圧測定部６７が接続されている。 In this way, when a DC voltage corresponding to a preset voltage set value is applied from the first DC power supply 63 and the second DC power supply 66, the first electrode 44 and the second electrode 45 are subjected to electrostatic force. The substrate G mounted on the mounting table 3 is electrostatically adsorbed. Further, a voltage measuring unit 67 for measuring a DC voltage applied to the first electrode 44 is connected to the first wiring 61, for example, between two resistances 62.

基板処理装置１は、制御部７を備えている。この制御部７には、プログラム、メモリ、ＣＰＵが設けられており、プログラムには、基板処理装置１を駆動し、基板Ｇに対する基板処理を実行するように命令（ステップ群）が組み込まれている。さらに、プログラムは、後述のフローチャートに従って、電圧測定部６７により直流電圧のモニターを行い、ソース電力やバイアス電力の供給停止の判断を実行するように命令が組み込まれている。 The board processing device 1 includes a control unit 7. The control unit 7 is provided with a program, a memory, and a CPU, and the program incorporates an instruction (step group) for driving the board processing device 1 and executing board processing for the board G. .. Further, the program incorporates an instruction to monitor the DC voltage by the voltage measuring unit 67 and execute the determination of stopping the supply of the source power and the bias power according to the flowchart described later.

さらに、制御部７は、例えば剥離検知部７１と給電制御部７２と、を備えている。剥離検知部７１は、電圧測定部６７にて測定された直流電圧が予め設定されたしきい値を超えた場合に、第１の電極４４を用いて静電吸着されている基板Ｇに、載置台３からの剥離が発生したことを検知するものである。しきい値は、予め実験やシミュレーション等により把握した値に基づいて特定され、例えばプラズマ処理中に安定し測定される直流電圧値（安定値）に２％～５％程度の余裕を持たせた値として設定される。電圧測定部６７の検出精度はノイズによっても左右されるため、ノイズの大きさによってはしきい値を大きくせざるを得ない場合もある。但し、異常放電の発生を抑える観点からすると、しきい値は安定値に対して５％の余裕を持たせた値までに抑えることが好ましい。しきい値は、制御部７のメモリに格納される。 Further, the control unit 7 includes, for example, a peeling detection unit 71 and a power supply control unit 72. The peeling detection unit 71 is mounted on the substrate G electrostatically adsorbed using the first electrode 44 when the DC voltage measured by the voltage measurement unit 67 exceeds a preset threshold value. It detects that peeling from the pedestal 3 has occurred. The threshold value is specified based on a value grasped in advance by experiments, simulations, etc. For example, the DC voltage value (stable value) that is stably measured during plasma processing has a margin of about 2% to 5%. Set as a value. Since the detection accuracy of the voltage measuring unit 67 is also affected by noise, it may be necessary to increase the threshold value depending on the magnitude of noise. However, from the viewpoint of suppressing the occurrence of abnormal discharge, it is preferable to suppress the threshold value to a value having a margin of 5% with respect to the stable value. The threshold value is stored in the memory of the control unit 7.

給電制御部７２は、基板Ｇの剥離の発生が検知された場合に、例えばソース電源５２からの高周波電力の供給を停止するための制御信号を出力するものである。さらに、この例の給電制御部７２は、基板Ｇの剥離の発生が検知された場合に、例えばバイアス電源５５からの高周波電力の供給を停止するための制御信号を出力するように構成されている。例えば電圧測定部６７では数ｍｓｅｃ間隔、例えば１ｍｓｅｃ間隔で直流電圧が測定され、測定されたデータを既述のしきい値と比較して、剥離検知部７１は基板Ｇの剥離の有無について判定する。また、制御部７は、剥離検知部７１にて基板Ｇの剥離が検知されると、例えば基板Ｇが剥離した旨のアラームを出力する。そして、給電制御部７２により、ソース電源５２及びバイアス電源５５からの高周波電力の供給を停止するための制御信号を出力するように構成されている。こうして、制御部７により、基板剥離の検知制御が行われる。 The power supply control unit 72 outputs a control signal for stopping the supply of high-frequency power from, for example, the source power supply 52 when the occurrence of peeling of the substrate G is detected. Further, the power supply control unit 72 of this example is configured to output a control signal for stopping the supply of high frequency power from, for example, the bias power supply 55 when the occurrence of peeling of the substrate G is detected. .. For example, the voltage measuring unit 67 measures the DC voltage at intervals of several msec, for example, at intervals of 1 msec, compares the measured data with the above-mentioned threshold value, and the peeling detecting unit 71 determines whether or not the substrate G is peeled. .. Further, when the peeling detection unit 71 detects the peeling of the substrate G, the control unit 7 outputs, for example, an alarm indicating that the substrate G has peeled off. Then, the power supply control unit 72 is configured to output a control signal for stopping the supply of high frequency power from the source power supply 52 and the bias power supply 55. In this way, the control unit 7 controls the detection of the peeling of the substrate.

また、基板処理装置１の運転開始時にはソース電力が安定せず、電圧測定部６７による直流電圧の測定結果もその影響を受けてしまうおそれがある。そこで、制御部７には、運転開始時に発生するこれらソース電力、バイアス電力の電力値の変動の判定基準値（変動範囲）が記憶されている。そして、ソース電力やバイアス電力の供給停止の判断を実行するにあたって、ソース電源５２から供給される電力値が、所定の変動範囲内の値であるか否かを判断できるように構成されている。同様に、バイアス電源５５から供給される電力値が、当該バイアス電力の変動範囲内の値であるか否かを判断できるように構成してもよい。 Further, the source power is not stable at the start of the operation of the substrate processing device 1, and the measurement result of the DC voltage by the voltage measuring unit 67 may be affected by the source power. Therefore, the control unit 7 stores the determination reference value (variation range) of the fluctuation of the power values of the source power and the bias power generated at the start of operation. Then, in executing the determination of stopping the supply of the source power and the bias power, it is configured so that it can be determined whether or not the power value supplied from the source power supply 52 is within a predetermined fluctuation range. Similarly, it may be configured so that it can be determined whether or not the power value supplied from the bias power supply 55 is within the fluctuation range of the bias power.

本例の基板処理装置１は、載置台３からの基板Ｇの剥離を検知するために、電圧測定部６７によって測定される第１の電極４４に印加される直流電圧値を利用するものである。続いて、基板Ｇの剥離と第１の電極４４に印加される直流電圧値との関係について、図３を参照して説明する。図３は静電チャック４と基板Ｇとを概略的に示す縦断側面図であり、図３右側は基板Ｇが載置台３に正常に吸着されている状態、図３左側は基板Ｇの一部が載置台３から剥離した状態を夫々示している。 The substrate processing apparatus 1 of this example utilizes the DC voltage value applied to the first electrode 44 measured by the voltage measuring unit 67 in order to detect the detachment of the substrate G from the mounting table 3. .. Subsequently, the relationship between the peeling of the substrate G and the DC voltage value applied to the first electrode 44 will be described with reference to FIG. FIG. 3 is a vertical sectional side view schematically showing the electrostatic chuck 4 and the substrate G. The right side of FIG. 3 shows a state in which the substrate G is normally attracted to the mounting table 3, and the left side of FIG. 3 shows a part of the substrate G. Shows the state of being peeled off from the mounting table 3, respectively.

基板処理装置１において、基板Ｇと静電吸着電極４３は、上層の誘電体層４１を介して互いに離間しているため、コンデンサ４０を構成する。真空容器１０内にてプラズマが生成した状態では、基板Ｇはプラズマを介して接地され、第１の電極４４、第２の電極４５には、第１の直流電源６３、第２の直流電源６６から夫々直流電圧が印加される。このため、基板Ｇには負の電荷が帯電し、第１及び第２の電極４４、４５には正の電荷が帯電する。これらの電荷により第１及び第２の電極４４、４５と、基板Ｇとが互いに静電引力により引き付けあうため、基板Ｇが載置台３上に吸着保持される。 In the substrate processing apparatus 1, the substrate G and the electrostatic adsorption electrode 43 are separated from each other via the dielectric layer 41 of the upper layer, and thus constitute the capacitor 40. In the state where plasma is generated in the vacuum vessel 10, the substrate G is grounded via the plasma, and the first electrode 44 and the second electrode 45 are connected to the first DC power supply 63 and the second DC power supply 66. DC voltage is applied from each. Therefore, the substrate G is charged with a negative charge, and the first and second electrodes 44 and 45 are charged with a positive charge. Due to these charges, the first and second electrodes 44 and 45 and the substrate G are attracted to each other by electrostatic attraction, so that the substrate G is adsorbed and held on the mounting table 3.

例えば図３右側に示すように、基板Ｇが載置台３に水平な姿勢で保持されている場合には、次の（１）式、（２）式の関係が成り立つ。
Ｑ＝ＣＶ ・・・（１）
Ｃ＝ε０×εｒ×（Ｓ／ｄ） ・・・（２）
Ｑ ：コンデンサ４０の電荷
Ｃ ：コンデンサ４０の静電容量
Ｖ ：基板Ｇと第１の電極４４との電位差
ε0 ：真空の誘電率
εｒ：誘電体層４１の比誘電率
Ｓ ：基板Ｇの面積
ｄ ：基板Ｇと第１の電極４４との距離（誘電体層４１の厚さ） For example, as shown on the right side of FIG. 3, when the substrate G is held in a horizontal posture on the mounting table 3, the following equations (1) and (2) are established.
Q = CV ・ ・ ・ (1)
C = ε 0 × εr × (S / d) ・ ・ ・ (2)
Q: Charge of capacitor 40 C: Capacitance of capacitor 40 V: Potential difference between substrate G and first electrode 44 ε0: Vacuum dielectric constant εr: Relative permittivity of dielectric layer 41 S: Area of substrate G d : Distance between the substrate G and the first electrode 44 (thickness of the dielectric layer 41)

ソース電力及びバイアス電力の安定後は、コンデンサ４０の電荷Ｑは一定である。従って、基板Ｇが載置台３から剥離せず、基板Ｇと第１の電極４４との距離ｄが一定であるときには、直流電圧値は変化しない。一方、図３左側に示すように、基板Ｇが載置台３から剥離すると、載置台３と基板Ｇとの距離Δｄが大きくなり、基板Ｇと第１の電極４４との距離は（ｄ＋Δｄ）となる。 After the source power and the bias power are stabilized, the charge Q of the capacitor 40 is constant. Therefore, when the substrate G does not peel off from the mounting table 3 and the distance d between the substrate G and the first electrode 44 is constant, the DC voltage value does not change. On the other hand, as shown on the left side of FIG. 3, when the substrate G is separated from the mounting table 3, the distance Δd between the mounting table 3 and the substrate G becomes large, and the distance between the substrate G and the first electrode 44 is (d + Δd). Become.

この結果、基板Ｇと電極４４との距離の拡大によって、（２）式よりコンデンサ４０の静電容量Ｃが減少する。コンデンサ４０の電荷Ｑは基板Ｇが載置台３から剥離する前後で変わらないため、（１）式より基板Ｇ及び第１の電極４４の電位差Ｖが増大する。そして、基板Ｇはプラズマを介して接地されているので、第１の電極４４の電位が変化する。すなわち、第１の電極４４の直流電圧値が上昇する。このように、載置台３からの基板Ｇの剥離と第１の電極４４に印加される直流電圧値との間には相関関係があることから、直流電圧値を測定することにより、載置台３からの基板Ｇの剥離を検知することができる。 As a result, the capacitance C of the capacitor 40 is reduced as compared with the equation (2) by increasing the distance between the substrate G and the electrode 44. Since the charge Q of the capacitor 40 does not change before and after the substrate G is separated from the mounting table 3, the potential difference V between the substrate G and the first electrode 44 increases from the equation (1). Since the substrate G is grounded via plasma, the potential of the first electrode 44 changes. That is, the DC voltage value of the first electrode 44 rises. As described above, since there is a correlation between the peeling of the substrate G from the mounting table 3 and the DC voltage value applied to the first electrode 44, the mounting table 3 can be measured by measuring the DC voltage value. It is possible to detect the peeling of the substrate G from.

一方で、基板の載置台３からの剥離は、基板Ｇの全面で一様に剥離が発生する可能性よりも、基板Ｇの周縁部の一部のみにて剥離が発生する可能性の方が高いことが分かった。また、基板Ｇの面積が大きくなった場合であっても、剥離領域Ｐの面積は、大型化前と大きく変わらない傾向があることを把握した。なお、基板Ｇの面積の変化に係らず、基板Ｇを吸着保持する際に第１及び第２の電極４４、４５に印加する電圧はほぼ一定である。 On the other hand, when the substrate is peeled off from the mounting table 3, it is more likely that the peeling will occur only on a part of the peripheral portion of the substrate G than the possibility that the peeling will occur uniformly on the entire surface of the substrate G. It turned out to be expensive. Further, it was found that even when the area of the substrate G becomes large, the area of the peeling region P tends not to be significantly different from that before the increase in size. The voltage applied to the first and second electrodes 44 and 45 when the substrate G is adsorbed and held is substantially constant regardless of the change in the area of the substrate G.

発明者らは、例えば第６世代、いわゆるＧ６と呼ばれる基板Ｇでは、静電吸着電極４３が分割されていない、既述の特許文献１に記載の手法により、電圧測定部にて測定された直流電圧に基づいて基板Ｇの剥離を検出可能であることを把握した。Ｇ６基板Ｇは、長辺１．８５ｍ、短辺１．５ｍ、面積２．７８ｍ２の基板であり、このサイズであっても載置台３からの基板の剥離は、基板の周縁部にて発生し、基板サイズによらず剥離領域の大きさはほぼ変わらない傾向にある。このため、後続の世代で基板Ｇが大型化していくと、以下に説明するように、剥離発生時の電圧変化の検出が困難となっていく懸念がある。 The inventors have described a direct current measured by a voltage measuring unit by the method described in Patent Document 1 described above, in which the electrostatic adsorption electrode 43 is not divided in, for example, the sixth generation, the so-called G6 substrate G. It was found that the peeling of the substrate G can be detected based on the voltage. The G6 substrate G is a substrate having a long side of 1.85 m, a short side of 1.5 m, and an area of 2.78 m 2. Even with this size, peeling of the substrate from the mounting table 3 occurs at the peripheral edge of the substrate. However, the size of the peeled area tends to be almost the same regardless of the size of the substrate. For this reason, as the size of the substrate G increases in subsequent generations, there is a concern that it will become difficult to detect the voltage change when peeling occurs, as will be described below.

即ち、（１）式及び図３を用いて説明したように、基板Ｇの剥離を直流電圧の測定値の変化により検知する手法では、直流電圧の増加分は剥離領域Ｐの面積に依存する。従って、剥離領域Ｐの大きさがほとんど変わらない場合には、基板Ｇの大型化に従い、剥離領域Ｐの面積が基板Ｇのサイズに対して相対的に小さくなる。このため、静電吸着電極が基板Ｇと同サイズである場合には、基板サイズの大型化に対応して、基板Ｇの剥離発生時の直流電圧の増加分が小さくなり、測定感度が低くなってしまう。 That is, as described using the equation (1) and FIG. 3, in the method of detecting the peeling of the substrate G by the change of the measured value of the DC voltage, the increase of the DC voltage depends on the area of the peeling region P. Therefore, when the size of the peeling region P is almost the same, the area of the peeling region P becomes relatively smaller than the size of the substrate G as the size of the substrate G increases. Therefore, when the electrostatic adsorption electrode is the same size as the substrate G, the increase in the DC voltage when the substrate G is peeled off becomes small in response to the increase in the substrate size, and the measurement sensitivity becomes low. It ends up.

以上に説明した理由に基づき、本実施形態では、静電吸着電極４３を、基板Ｇの剥離が発生しやすい基板周縁部に対応する第１の電極４４と、基板Ｇの中央部に対応する第２の電極４５と、に分割している。この結果、第１の電極４４の面積を基板Ｇよりも小さく抑えることができるので、基板Ｇが大型化しても、直流電圧値の測定感度の低下を防ぐことができる。この例では、第１の電極４４の面積を４．２ｍ２以下となるように形成している。この値は、Ｇ６基板Ｇの面積の約１．５倍に相当する面積であり、特許文献１に記載の従来手法で剥離を検出可能な基板Ｇのサイズを踏まえ、経験的に求めたものである。このように、第１の電極４４の面積を４．２ｍ２以下とすることで、より大型の基板Ｇの周縁部における部分剥離の発生を高い感度で検知することができる。なお、第１の電極４４の面積の下限値に特段の限定は無いが、直流電圧の増加分の検出感度が高くなりすぎることを抑える観点からは、０．９ｍ２（Ｇ６基板Ｇの面積の約３分の１）以上とする場合を例示できる。 Based on the reasons described above, in the present embodiment, the electrostatic adsorption electrode 43 corresponds to the first electrode 44 corresponding to the peripheral portion of the substrate where peeling of the substrate G is likely to occur, and the first electrode 44 corresponding to the central portion of the substrate G. It is divided into two electrodes 45. As a result, since the area of the first electrode 44 can be suppressed to be smaller than that of the substrate G, it is possible to prevent a decrease in the measurement sensitivity of the DC voltage value even if the substrate G becomes large. In this example, the area of the first electrode 44 is formed to be 4.2 m 2 or less. This value is an area corresponding to about 1.5 times the area of the G6 substrate G, and is empirically obtained based on the size of the substrate G in which peeling can be detected by the conventional method described in Patent Document 1. be. By setting the area of the first electrode 44 to 4.2 m 2 or less in this way, it is possible to detect the occurrence of partial peeling at the peripheral edge of the larger substrate G with high sensitivity. The lower limit of the area of the first electrode 44 is not particularly limited, but from the viewpoint of suppressing the detection sensitivity due to the increase in the DC voltage from becoming too high, 0.9 m 2 (the area of the G6 substrate G). For example, the case where the amount is about one-third) or more can be exemplified.

続いて、上記の基板処理装置１の作用について、基板Ｇに対するエッチング処理を例にして、図４のフローチャートを参照しながら説明する。初めに、外部から進入した搬送アームと不図示の昇降ピンとの協働作用により、基板Ｇを載置台３に載置する。次いで、ゲートバルブ１２を閉じた後、載置台３と基板Ｇとの間に伝熱ガスを供給する。また、処理レシピなどに記載されている情報に基づき、静電チャック４の第１の電極４４及び第２の電極４５へ、第１の直流電源６３及び第２の直流電源６６から夫々設定された直流電圧を印加する。 Subsequently, the operation of the substrate processing apparatus 1 will be described with reference to the flowchart of FIG. 4 by taking an etching process on the substrate G as an example. First, the substrate G is placed on the mounting table 3 by the cooperative action of the transport arm that has entered from the outside and the elevating pin (not shown). Next, after closing the gate valve 12, heat transfer gas is supplied between the mounting table 3 and the substrate G. Further, based on the information described in the processing recipe and the like, the first electrode 44 and the second electrode 45 of the electrostatic chuck 4 are set from the first DC power supply 63 and the second DC power supply 66, respectively. Apply DC voltage.

これにより、第１及び第２の電極４４、４５と、基板Ｇと、が互いに引き付けあい、基板Ｇが載置台３に吸着保持される。次いで、真空容器１０内に例えばＣＦ４やＣｌ２などのエッチングガスを含む処理ガスをシャワーヘッド２から供給すると共に、排気口１３から真空排気を行い真空容器１０内の圧力を所定の圧力に調整する。 As a result, the first and second electrodes 44 and 45 and the substrate G are attracted to each other, and the substrate G is adsorbed and held on the mounting table 3. Next, a processing gas containing an etching gas such as CF 4 or Cl 2 is supplied into the vacuum vessel 10 from the shower head 2, and vacuum exhaust is performed from the exhaust port 13 to adjust the pressure in the vacuum vessel 10 to a predetermined pressure. do.

続いて、ソース電源５２から誘導結合アンテナ５０へソース電力の印加を開始すると共に、バイアス電源５５からサセプタ３１へバイアス電力の印加を開始する（ステップＳ１）。例えば先ずソース電力を印加し、ソース電力が立ち上がって安定してから、バイアス電力を印加する。その後、制御部７によりソース電力、バイアス電力の各測定値と、変動範囲との比較が行われ、ソース電力及びバイアス電力が安定したか否かを判断する（ステップＳ２）。これらの電力が安定したと判断がされたときには（ステップＳ２：Ｙｅｓ）、ソース電力やバイアス電力の変動の影響を受けて直流電圧が変動しない状態となったことが確認される。そこで、基板剥離の検知制御を開始する（ステップＳ３）。 Subsequently, the source power is started to be applied from the source power supply 52 to the inductively coupled antenna 50, and the bias power is started to be applied from the bias power supply 55 to the susceptor 31 (step S1). For example, first apply the source power, and after the source power rises and stabilizes, the bias power is applied. After that, the control unit 7 compares the measured values of the source power and the bias power with the fluctuation range, and determines whether or not the source power and the bias power are stable (step S2). When it is determined that these electric powers are stable (step S2: Yes), it is confirmed that the DC voltage does not fluctuate due to the influence of fluctuations in the source power and the bias power. Therefore, the detection control of the substrate peeling is started (step S3).

真空容器１０内では、誘導結合アンテナ５０へのソース電力の印加により、載置台３とシャワーヘッド２との間に高周波の電界が発生し、これにより、真空容器１０内に供給されている処理ガスが励起され、処理ガスのプラズマが生成する。続いて、バイアス電源５５からサセプタ３１にバイアス電力を印加することで、プラズマ中の陽イオンは載置台３を介して基板Ｇに生じる直流バイアス電位によって基板Ｇへ引きこまれる。こうして、プラズマによって基板Ｇの全面へ均一にプラズマエッチングが実施される。 In the vacuum vessel 10, a high-frequency electric field is generated between the mounting table 3 and the shower head 2 by applying the source power to the inductive coupling antenna 50, whereby the processing gas supplied in the vacuum vessel 10 is generated. Is excited and a plasma of processing gas is generated. Subsequently, by applying the bias power from the bias power source 55 to the susceptor 31, the cations in the plasma are drawn into the substrate G by the DC bias potential generated in the substrate G via the mounting table 3. In this way, plasma etching is uniformly performed on the entire surface of the substrate G by plasma.

基板剥離の検知制御では、電圧測定部６７により、第１の電極４４に印加される直流電圧値を例えば１ｍｓｅｃ間隔で測定する（ステップＳ４）。そして、ステップＳ５にて、測定された直流電圧値がしきい値を超えているか否かを判定し、しきい値以下であれば、基板Ｇの剥離が発生しないと判定して（ステップＳ５：Ｎｏ）、ステップＳ４に戻って処理を続行する。 In the substrate peeling detection control, the voltage measuring unit 67 measures the DC voltage value applied to the first electrode 44 at intervals of, for example, 1 msec (step S4). Then, in step S5, it is determined whether or not the measured DC voltage value exceeds the threshold value, and if it is equal to or less than the threshold value, it is determined that the substrate G does not peel off (step S5: No), the process returns to step S4 and the process is continued.

一方、直流電圧値がしきい値を超えていれば、基板Ｇの剥離が発生したと判定し（ステップＳ５：Ｙｅｓ）、ステップＳ６にて、例えばアラームを出力し、給電制御部７２により、基板Ｇに対してプラズマ処理を行うため真空容器１０内に高周波電力を供給するソース電源５２及びバイアス電源５５へ停止信号を出力する。こうして、高周波電力（ソース電力及びバイアス電力）の供給を停止し、真空容器１０内のプラズマを消滅させ、処理を終了する。 On the other hand, if the DC voltage value exceeds the threshold value, it is determined that the substrate G has been peeled off (step S5: Yes), an alarm is output in step S6, for example, and the power supply control unit 72 outputs the substrate. A stop signal is output to the source power supply 52 and the bias power supply 55 that supply high-frequency power to the vacuum vessel 10 in order to perform plasma processing on G. In this way, the supply of high frequency power (source power and bias power) is stopped, the plasma in the vacuum vessel 10 is extinguished, and the process is terminated.

この実施形態によれば、基板Ｇの剥離が発生しやすい基板周縁部に対応する第１の電極４４に印加される直流電圧を測定し、測定された直流電圧がしきい値を超えた場合に、基板Ｇの剥離が発生したことを検知している。従って、基板Ｇが大型化しても、直流電圧値を測定する第１の電極４４の大型化を防ぐことができ、これにより、部分剥離の発生に伴う直流電圧の増化分を十分に把握することができる。このため、例えばＧ１０の大型の基板Ｇであっても、基板剥離の検知感度を高めることができ、部分的な剥離についても検知することができる。 According to this embodiment, the DC voltage applied to the first electrode 44 corresponding to the peripheral portion of the substrate where the substrate G is likely to be peeled off is measured, and when the measured DC voltage exceeds the threshold value. , It is detected that the substrate G is peeled off. Therefore, even if the size of the substrate G is increased, it is possible to prevent the first electrode 44 for measuring the DC voltage value from being increased in size, thereby sufficiently grasping the increase in the DC voltage due to the occurrence of partial peeling. be able to. Therefore, for example, even with a large substrate G of G10, the detection sensitivity of substrate peeling can be increased, and even partial peeling can be detected.

具体的には、Ｇ１０基板Ｇの面積は、Ｇ６基板面積の３．５７倍である。このため、静電吸着電極が基板Ｇと同サイズであって、剥離領域Ｐが同じ大きさである場合には、Ｇ１０基板Ｇの直流電圧の変化分はＧ６基板の０．２８倍となり、検出感度が低下することが理解される。上述の実施形態では、第１の電極４４の面積を４．２ｍ２以下となるように形成しているので、高い感度で基板剥離の発生を検知することができる。 Specifically, the area of the G10 substrate G is 3.57 times the area of the G6 substrate. Therefore, when the electrostatic adsorption electrode has the same size as the substrate G and the peeling region P has the same size, the change in the DC voltage of the G10 substrate G is 0.28 times that of the G6 substrate, and the detection is performed. It is understood that the sensitivity is reduced. In the above-described embodiment, since the area of the first electrode 44 is formed to be 4.2 m 2 or less, the occurrence of substrate peeling can be detected with high sensitivity.

このように第１の電極４４に印加される直流電圧値を取得することによって、基板Ｇが載置台３から剥離すると、直ちに基板Ｇの剥離を検知することができる。例えば電圧測定部６７では、１ｍｓｅｃ間隔で直流電圧を測定しているので、基板Ｇが載置台３から剥離したとしても数ｍｓｅｃ後には、当該剥離の発生を検知することができる。こうして、基板Ｇの剥離を早期に検知できるので、剥離の発生後、速やかにプラズマ生成用の高周波電力の供給を停止する動作等を実行することができる。これにより、基板Ｇが載置台３から剥離した状態でプラズマ処理を続行する事態を回避でき、剥離した部分からプラズマの活性種が進入することに起因する異常放電の発生や、プラズマの活性種による載置台３の損傷を未然に防ぐことができる。 By acquiring the DC voltage value applied to the first electrode 44 in this way, when the substrate G is detached from the mounting table 3, the detachment of the substrate G can be detected immediately. For example, since the voltage measuring unit 67 measures the DC voltage at 1 msec intervals, even if the substrate G is peeled off from the mounting table 3, the occurrence of the peeling can be detected after several msec. In this way, since the peeling of the substrate G can be detected at an early stage, it is possible to immediately stop the supply of high-frequency power for plasma generation after the peeling occurs. As a result, it is possible to avoid a situation in which the plasma processing is continued in a state where the substrate G is separated from the mounting table 3, and an abnormal discharge is generated due to the intrusion of the active plasma species from the detached portion, or the active plasma species are used. It is possible to prevent damage to the mounting table 3 in advance.

ここで、図５に、プラズマエッチング中に異常放電が発生した場合のソース電力及びバイアス電力、測定された直流電圧値の時間変化を示す。図５中、縦軸はソース電力及びバイアス電力の電力レベルと直流電圧値、横軸は時間である。時刻ｔ１にてソース電力の印加を開始し、時刻ｔ２にてバイアス電力の印加を開始する。ソース電力及びバイアス電力が共に安定した後、時刻ｔ３にて基板剥離の検知制御を開始するが、直流電圧値はソース電力及びバイアス電力が安定している間は一定値で安定している。 Here, FIG. 5 shows the time change of the source power, the bias power, and the measured DC voltage value when an abnormal discharge occurs during plasma etching. In FIG. 5, the vertical axis represents the power level and DC voltage value of the source power and the bias power, and the horizontal axis represents time. The application of the source power is started at the time t1, and the application of the bias power is started at the time t2. After both the source power and the bias power are stable, the detection control of the substrate peeling is started at time t3, but the DC voltage value is stable at a constant value while the source power and the bias power are stable.

時刻ｔ５は異常放電が発生したタイミングであり、異常放電によりソース電力及びバイアス電力のいずれも変動する。また、一定値で安定していた直流電圧値も急激に低下する。また、時刻ｔ５に先立ち、時刻ｔ４にて基板Ｇが載置台３から剥離したことが認められたが、このときの第１の電極４４の直流電圧値は上昇しており、剥離と直流電圧値の変動とが対応することが、確認された。図５中、点線で示す直流電圧値は、基板サイズと同サイズの静電吸着電極を用いた場合であり、このように、静電吸着電極が大きいと、直流電圧の変化分が小さくなることが認められる。このことからも、第１の電極４４を用いて基板Ｇの周縁部を静電吸着し、この電極４４の直流電圧値の変化を測定することによって、基板Ｇの剥離を高感度で検知できることが理解される。 Time t5 is the timing at which the abnormal discharge occurs, and both the source power and the bias power fluctuate due to the abnormal discharge. In addition, the DC voltage value, which was stable at a constant value, also drops sharply. Further, it was confirmed that the substrate G was peeled off from the mounting table 3 at time t4 prior to time t5, but the DC voltage value of the first electrode 44 at this time was rising, and the peeling and the DC voltage value were found. It was confirmed that it corresponds to the fluctuation of. In FIG. 5, the DC voltage value shown by the dotted line is the case where an electrostatic adsorption electrode having the same size as the substrate size is used. As described above, when the electrostatic adsorption electrode is large, the change in DC voltage becomes small. Is recognized. From this, it is possible to detect the peeling of the substrate G with high sensitivity by electrostatically adsorbing the peripheral portion of the substrate G using the first electrode 44 and measuring the change in the DC voltage value of the electrode 44. Understood.

続いて、本開示の基板処理装置の第２の実施形態について、図６を参照して説明する。この例の基板処理装置は、第１の実施形態に記載の電圧測定部６７を第１の電圧測定部としたとき、さらに第２の電極４５に印加される直流電圧を測定する第２の電圧測定部６８を備えている。また、剥離検知部７１は、第１の電圧測定部６７にて測定された第１の直流電圧値が第１のしきい値を超えた場合と、第２の電圧測定部６８にて測定された第２の直流電圧値が第２のしきい値を超えた場合に、夫々基板Ｇの剥離の発生を検知するように構成されている。 Subsequently, a second embodiment of the substrate processing apparatus of the present disclosure will be described with reference to FIG. In the substrate processing apparatus of this example, when the voltage measuring unit 67 described in the first embodiment is used as the first voltage measuring unit, the second voltage for measuring the DC voltage applied to the second electrode 45 is further measured. A measuring unit 68 is provided. Further, the peeling detection unit 71 is measured when the first DC voltage value measured by the first voltage measuring unit 67 exceeds the first threshold value and when it is measured by the second voltage measuring unit 68. When the second DC voltage value exceeds the second threshold value, it is configured to detect the occurrence of peeling of the substrate G, respectively.

この実施形態においても、第１の実施形態と同様に、例えばソース電源５２から供給されるソース電力と、バイアス電源５５から供給されるバイアス電力が安定してから、基板剥離の検知制御を開始する。この基板剥離の検知制御では、第１の電圧測定部６７により、第１の電極４４に印加される第１の直流電圧値を測定すると共に、第２の電圧測定部６８により、第２の電極４５に印加される第２の直流電圧値を測定する。 Also in this embodiment, as in the first embodiment, for example, after the source power supplied from the source power supply 52 and the bias power supplied from the bias power supply 55 are stabilized, the substrate peeling detection control is started. .. In this substrate peeling detection control, the first voltage measuring unit 67 measures the first DC voltage value applied to the first electrode 44, and the second voltage measuring unit 68 measures the second electrode. The second DC voltage value applied to 45 is measured.

そして、測定された第１の直流電圧値及び第２の直流電圧値が夫々第１のしきい値及び第２のしきい値を超えているか否かを判定し、夫々しきい値以下であれば、基板Ｇの剥離が発生しないと判定し、処理を続行する。一方、第１の直流電圧値が第１のしきい値を超えていれば、基板Ｇの周縁部にて剥離が発生したと判定する。そして、例えばアラームを出力し、給電制御部７２により、ソース電源５２及びバイアス電源５５へ停止信号を出力して、高周波電力（ソース電力及びバイアス電力）の供給を停止する。また、第２の直流電圧値が第２のしきい値を超えていれば、基板Ｇの中央部にて剥離が発生したと判定し、例えばアラームを出力する。 Then, it is determined whether or not the measured first DC voltage value and the second DC voltage value exceed the first threshold value and the second threshold value, respectively, and if they are equal to or less than the threshold values, respectively. If so, it is determined that the substrate G does not peel off, and the process is continued. On the other hand, if the first DC voltage value exceeds the first threshold value, it is determined that peeling has occurred at the peripheral edge of the substrate G. Then, for example, an alarm is output, and the power supply control unit 72 outputs a stop signal to the source power supply 52 and the bias power supply 55 to stop the supply of high frequency power (source power and bias power). If the second DC voltage value exceeds the second threshold value, it is determined that peeling has occurred in the central portion of the substrate G, and an alarm is output, for example.

この実施形態によれば、基板Ｇの周縁部のみならず中央部の部分剥離が検知されるので、例えば基板Ｇに反りが発生して、基板中央部が載置台３から剥離する場合等を検知することができる。このような情報は、処理状態の均一性の評価等に役立ち、有効である。なお、基板Ｇの中央部のみの剥離発生時には、異常放電の発生やプラズマ活性種の進入が発生しにくいので、アラーム発生のみの例を示したが、周縁部の剥離発生と同様に、高周波電力の供給停止を行ってもよい。 According to this embodiment, partial peeling of not only the peripheral portion but also the central portion of the substrate G is detected. Therefore, for example, it is detected that the substrate G is warped and the central portion of the substrate is peeled from the mounting table 3. can do. Such information is useful and effective for evaluating the uniformity of the processing state. When peeling occurs only in the central part of the substrate G, abnormal discharge and invasion of plasma active species are unlikely to occur. Therefore, an example of only alarm generation is shown. You may stop the supply of.

続いて、本開示の基板処理装置の第３の実施形態について、図７を参照して説明する。この例の第１の電極は、基板Ｇの周縁部の周方向に沿って複数の分割電極に分割されている。図７では、第１の電極８を、４つの分割電極８１、８２、８３、８４に分割した例を示す。この例では、基板Ｇの４つの辺に対応して、一つの辺に一つの分割電極が設けられており、分割電極同士が互いに離間すると共に、各分割電極と第２の電極４５とが互いに離間するように配列されている。そして、互いに対向する２つの分割電極がグループを構成し、このグループ毎に対応して第１の直流電源が設けられ、各グループに含まれる分割電極に対し、予め設定された電圧設定値に対応する直流電圧を印加するように構成されている。 Subsequently, a third embodiment of the substrate processing apparatus of the present disclosure will be described with reference to FIG. 7. The first electrode of this example is divided into a plurality of divided electrodes along the circumferential direction of the peripheral edge portion of the substrate G. FIG. 7 shows an example in which the first electrode 8 is divided into four divided electrodes 81, 82, 83, 84. In this example, one divided electrode is provided on one side corresponding to the four sides of the substrate G, the divided electrodes are separated from each other, and each divided electrode and the second electrode 45 are separated from each other. They are arranged so as to be separated. Then, two divided electrodes facing each other form a group, and a first DC power supply is provided corresponding to each group, and corresponds to a preset voltage set value for the divided electrodes included in each group. It is configured to apply a DC voltage to be applied.

図７の例では、分割電極８１、８３が第１のグループを構成し、これら分割電極８１、８３は、配線９１により第１のグループ用の第１の直流電源９２に接続されている。また、分割電極８２、８４が第２のグループを構成し、これら分割電極８２、８４は、配線９３により第２のグループ用の第１の直流電源９４に接続されている。符号９５、９６は夫々電圧調整用の抵抗であり、配線９１、９３は、夫々電圧測定部９７、９８に接続されている。そして、電圧測定部９７、９８は、前記グループ毎に、そのグループに含まれる分割電極８１、８３／８２、８４に印加される直流電圧を測定するように構成されている。 In the example of FIG. 7, the divided electrodes 81 and 83 form the first group, and the divided electrodes 81 and 83 are connected to the first DC power supply 92 for the first group by the wiring 91. Further, the divided electrodes 82 and 84 form a second group, and the divided electrodes 82 and 84 are connected to the first DC power supply 94 for the second group by the wiring 93. Reference numerals 95 and 96 are resistances for voltage adjustment, respectively, and wirings 91 and 93 are connected to voltage measuring units 97 and 98, respectively. The voltage measuring units 97 and 98 are configured to measure the DC voltage applied to the divided electrodes 81, 83/82 and 84 included in the group for each group.

剥離検知部７１は、電圧測定部９７、９８にて前記グループ毎に測定された直流電圧が予め設定されたしきい値を超えた場合に、そのグループに含まれる分割電極８１、８３／８２、８４を用いて静電吸着されている基板Ｇの剥離の発生を検知するように構成されている。しきい値は、グループ毎に設定されている。その他の構成は、第１の実施形態と同様である。 When the DC voltage measured for each group by the voltage measuring units 97 and 98 exceeds a preset threshold value, the peeling detecting unit 71 includes the divided electrodes 81, 83/82, which are included in the group. The 84 is configured to detect the occurrence of peeling of the substrate G that is electrostatically adsorbed. The threshold is set for each group. Other configurations are the same as those of the first embodiment.

この実施形態では、第１の実施形態と同様に、例えばソース電源５２から供給されるソース電力と、バイアス電源５５から供給されるバイアス電力が安定してから、基板剥離の検知制御を開始する。この基板剥離の検知制御では、電圧測定部９７により、第１のグループに含まれる分割電極８１、８３に印加される直流電圧値を測定する。また、電圧測定部９８により、第２のグループに含まれる分割電極８２、８４に印加される直流電圧値を測定する。 In this embodiment, as in the first embodiment, for example, the source power supplied from the source power supply 52 and the bias power supplied from the bias power supply 55 become stable, and then the substrate peeling detection control is started. In this substrate peeling detection control, the voltage measuring unit 97 measures the DC voltage value applied to the divided electrodes 81 and 83 included in the first group. Further, the voltage measuring unit 98 measures the DC voltage value applied to the divided electrodes 82 and 84 included in the second group.

そして、測定された各グループの分割電極８１、８３／８２、８４の直流電圧値が夫々のしきい値を超えているか否かを判定し、夫々しきい値以下であれば、基板Ｇの剥離が発生しないと判定し、処理を続行する。一方、しきい値を超えていれば、基板Ｇの周縁部にて剥離が発生したと判定する。そして、例えばアラームを出力し、給電制御部により、ソース電源５２及びバイアス電源５５へ停止信号を出力して、高周波電力（ソース電力及びバイアス電力）の供給を停止する。この例においても、第２の電極４５に印加される直流電圧値を測定し、この測定値がしきい値を超えていれば、基板Ｇの中央部にて剥離発生したと判定するようにしてもよい。 Then, it is determined whether or not the DC voltage values of the measured divided electrodes 81, 83/82, and 84 of each group exceed the threshold values, and if they are equal to or less than the threshold values, the substrate G is peeled off. Is determined not to occur and processing is continued. On the other hand, if the threshold value is exceeded, it is determined that peeling has occurred at the peripheral edge of the substrate G. Then, for example, an alarm is output, and the power supply control unit outputs a stop signal to the source power supply 52 and the bias power supply 55 to stop the supply of high frequency power (source power and bias power). Also in this example, the DC voltage value applied to the second electrode 45 is measured, and if this measured value exceeds the threshold value, it is determined that peeling has occurred in the central portion of the substrate G. May be good.

この実施形態によれば、第１の電極がさらに複数に分割されているため、より感度の高い基板Ｇの剥離の検知を行うことができる。また、分割電極のグループ毎に直流電圧を測定しているので、剥離領域Ｐが特定しやすくなる。 According to this embodiment, since the first electrode is further divided into a plurality of electrodes, it is possible to detect the peeling of the substrate G with higher sensitivity. Further, since the DC voltage is measured for each group of the divided electrodes, the peeling region P can be easily specified.

以上において、剥離検知部及び電圧測定部は、基板処理装置の制御を行なう制御部を介さずに、ソース電源５２の電源部へ設けるようにしてもよく、電圧測定部は、静電吸着電極における電位の変化を直接的あるいは間接的に監視するものであればよい。また、上述の例では、直流電圧が一度しきい値を超えると、基板Ｇが載置台３から剥離したと判定しているが、直流電圧のノイズの影響を考慮して、直流電圧が所定の期間内に複数回連続してしきい値を超えたときに基板Ｇの剥離を検知するようにしてもよい。 In the above, the peeling detection unit and the voltage measurement unit may be provided in the power supply unit of the source power supply 52 without going through the control unit that controls the substrate processing device, and the voltage measurement unit is in the electrostatic adsorption electrode. Any change in potential may be directly or indirectly monitored. Further, in the above example, once the DC voltage exceeds the threshold value, it is determined that the substrate G is separated from the mounting table 3, but the DC voltage is predetermined in consideration of the influence of the noise of the DC voltage. The peeling of the substrate G may be detected when the threshold value is exceeded a plurality of times in succession within the period.

また、基板処理装置１に設けられるプラズマ形成部は、誘導結合アンテナ５０に限らず、載置台（下部電極）と対向するように上部電極を設け、上部電極と下部電極の容量結合によってプラズマを形成するものであってもよい。この場合、載置台及び上部電極の一方にプラズマ生成用の高周波電力供給部から高周波電力を供給してプラズマを形成する。 Further, the plasma forming portion provided in the substrate processing apparatus 1 is not limited to the inductively coupled antenna 50, but an upper electrode is provided so as to face the mounting table (lower electrode), and plasma is formed by capacitive coupling between the upper electrode and the lower electrode. It may be something to do. In this case, high-frequency power is supplied from the high-frequency power supply unit for plasma generation to one of the mounting table and the upper electrode to form plasma.

以上において、処理対象の基板Ｇは必ずしも矩形基板には限らない。また、真空容器内において実行される処理ガスを用いた基板処理は、エッチングに限らず、成膜処理でもよい。さらに、真空容器内にて必ずしもプラズマを形成すること必要はなく、例えば熱ＣＶＤ処理に対しても適用可能である。
今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 In the above, the substrate G to be processed is not necessarily limited to a rectangular substrate. Further, the substrate treatment using the treatment gas executed in the vacuum vessel is not limited to etching, but may be a film forming treatment. Further, it is not always necessary to form plasma in the vacuum vessel, and it can be applied to, for example, thermal CVD processing.
It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

１ 基板処理装置
１０ 真空容器
３ 載置台
４１ 誘電体層
４３ 静電吸着電極
４４ 第１の静電吸着電極
４５ 第２の静電吸着電極
６３ 第１の直流電源
６６ 第２の直流電源
６７ 電圧測定部
７１ 剥離検知部 1 Substrate processing device 10 Vacuum container 3 Mounting table 41 Dielectric layer 43 Electrostatic adsorption electrode 44 First electrostatic adsorption electrode 45 Second electrostatic adsorption electrode 63 First DC power supply 66 Second DC power supply 67 Voltage measurement Part 71 Peeling detection part

Claims (8)

基板に対して処理ガスを用いた基板処理を行うための真空容器内に設けられ、処理対象の基板が載置される載置台と、
前記載置台に設けられた誘電体層内に形成され、前記載置台に載置された基板の周縁部を静電吸着するために、前記周縁部の平面形状に対応して設けられた第１の静電吸着電極と、
前記載置台に設けられた誘電体層内に、前記第１の静電吸着電極とは分離して形成され、前記載置台に載置された基板の中央部を静電吸着するために、前記中央部の形状に対応して設けられた第２の静電吸着電極と、
前記第１の静電吸着電極、及び第２の静電吸着電極に、各々、予め設定された電圧設定値に対応する直流電圧を印加する第１の直流電源、及び第２の直流電源と、
前記第１の静電吸着電極に印加される直流電圧を測定する電圧測定部と、
前記電圧測定部にて測定された直流電圧が予め設定されたしきい値を超えた場合に、前記第１の静電吸着電極を用いて静電吸着されている基板の剥離が発生したことを検知する剥離検知部と、を備えたことを特徴とする基板処理装置。 A mounting table provided in a vacuum container for processing a substrate using a processing gas and on which the substrate to be processed is placed, and
A first unit formed in the dielectric layer provided on the above-mentioned pedestal and provided corresponding to the planar shape of the rim portion in order to electrostatically adsorb the peripheral portion of the substrate mounted on the above-mentioned pedestal. Electrostatic adsorption electrode and
In order to electrostatically adsorb the central portion of the substrate mounted on the above-mentioned pedestal, which is formed separately from the first electrostatic adsorption electrode in the dielectric layer provided on the above-mentioned pedestal. A second electrostatic adsorption electrode provided corresponding to the shape of the central part,
A first DC power supply and a second DC power supply that apply a DC voltage corresponding to a preset voltage set value to the first electrostatic adsorption electrode and the second electrostatic adsorption electrode, respectively.
A voltage measuring unit that measures the DC voltage applied to the first electrostatic adsorption electrode, and
When the DC voltage measured by the voltage measuring unit exceeds a preset threshold value, it is determined that the substrate electrostatically adsorbed by the first electrostatic adsorption electrode has peeled off. A substrate processing device characterized by being provided with a peeling detection unit for detecting. 前記電圧測定部を第１の電圧測定部としたとき、前記第２の静電吸着電極に印加される直流電圧を測定する第２の電圧測定部を備え、
前記剥離検知部は、さらに、前記第２の電圧測定部にて測定された直流電圧が予め設定されたしきい値を超えた場合に、前記第２の静電吸着電極を用いて静電吸着されている基板の剥離の発生を検知することを特徴とする請求項１に記載の基板処理装置。 When the voltage measuring unit is used as the first voltage measuring unit, a second voltage measuring unit for measuring the DC voltage applied to the second electrostatic adsorption electrode is provided.
The peeling detection unit further electrostatically adsorbs using the second electrostatic adsorption electrode when the DC voltage measured by the second voltage measuring unit exceeds a preset threshold value. The substrate processing apparatus according to claim 1, wherein the occurrence of peeling of the substrate is detected. 前記第１の静電吸着電極は、前記基板の周縁部の周方向に沿って複数の分割電極に分割されていることと、
前記複数の分割電極を複数のグループに分けたとき、これら複数のグループに各々対応付けて設けられ、対応付けられたグループに含まれる分割電極に対し、予め設定された電圧設定値に対応する直流電圧を印加する複数の前記第１の直流電源を備え、電圧測定部は前記グループ毎に、そのグループに含まれる分割電極に印加される直流電圧を測定することと、
前記剥離検知部は、前記電圧測定部にて前記グループ毎に測定された直流電圧が予め設定されたしきい値を超えた場合に、そのグループに含まれる分割電極を用いて静電吸着されている基板の剥離の発生を検知することと、を特徴とする請求項１または２に記載の基板処理装置。 The first electrostatic adsorption electrode is divided into a plurality of divided electrodes along the circumferential direction of the peripheral edge of the substrate.
When the plurality of divided electrodes are divided into a plurality of groups, the divided electrodes are provided in association with each of the plurality of groups, and the DC corresponding to the preset voltage set value is applied to the divided electrodes included in the associated group. A plurality of the first DC power supplies to which a voltage is applied are provided, and the voltage measuring unit measures the DC voltage applied to the divided electrodes included in the group for each group.
When the DC voltage measured for each group by the voltage measuring unit exceeds a preset threshold value, the peeling detecting unit is electrostatically adsorbed using the split electrodes included in the group. The substrate processing apparatus according to claim 1 or 2, wherein the occurrence of peeling of the substrate is detected. 前記真空容器内に処理ガスのプラズマを発生させるためのプラズマ形成部に対して高周波電力を供給する高周波電力供給部と、
前記剥離検知部にて前記第１の静電吸着電極を用いて静電吸着されている基板の剥離の発生が検知された場合に、前記高周波電力供給部からの高周波電力の供給を停止するための制御信号を出力する給電制御部と、を備えたことを特徴とする請求項１ないし３のいずれか一つに記載の基板処理装置。 A high-frequency power supply unit that supplies high-frequency power to a plasma forming unit for generating plasma of processing gas in the vacuum vessel, and a high-frequency power supply unit.
To stop the supply of high-frequency power from the high-frequency power supply unit when the peel-off detection unit detects the occurrence of peeling of the substrate electrostatically adsorbed using the first electrostatic adsorption electrode. The substrate processing apparatus according to any one of claims 1 to 3, further comprising a power supply control unit for outputting the control signal of the above. 前記基板は矩形基板であり、前記第１の静電吸着電極は、前記矩形基板の辺部に沿った環状の平面形状に対応して設けられていることと、
前記第１の静電吸着電極の面積が４．２ｍ２以下となるように形成されていることと、を特徴とする請求項１ないし４のいずれか一つに記載の基板処理装置。 The substrate is a rectangular substrate, and the first electrostatic adsorption electrode is provided corresponding to an annular planar shape along a side portion of the rectangular substrate.
The substrate processing apparatus according to any one of claims 1 to 4, wherein the first electrostatic adsorption electrode is formed so as to have an area of 4.2 m 2 or less. 基板に対して処理ガスを用いた基板処理を行うための真空容器内に設けられた載置台に処理対象の基板を載置する工程と、
前記載置台に載置された基板の周縁部を静電吸着するために、前記載置台に設けられた誘電体層内に形成され、前記周縁部の平面形状に対応して設けられた第１の静電吸着電極と、前記載置台に載置された基板の中央部を静電吸着するために、前記載置台に設けられた誘電体層内に形成され、前記中央部の形状に対応して設けられた第２の静電吸着電極とに対し、各々、予め設定された電圧設定値に対応する直流電圧を印加して、前記載置台に載置された基板を静電吸着する工程と、
前記第１の静電吸着電極に印加される直流電圧を測定する工程と、
前記測定された直流電圧が予め設定されたしきい値を超えた場合に、前記第１の静電吸着電極を用いて静電吸着されている基板の剥離が発生したことを検知する工程と、を含むことを特徴とする基板処理方法。 The process of placing the substrate to be processed on a mounting table provided in a vacuum container for processing the substrate using the processing gas, and
A first unit formed in a dielectric layer provided on the above-mentioned pedestal in order to electrostatically attract the peripheral portion of the substrate mounted on the above-mentioned pedestal, and provided corresponding to the planar shape of the rim portion. In order to electrostatically adsorb the electrostatic adsorption electrode of the above and the central portion of the substrate mounted on the above-mentioned pedestal, it is formed in the dielectric layer provided on the above-mentioned pedestal and corresponds to the shape of the central portion. A step of electrostatically adsorbing a substrate mounted on the above-mentioned table by applying a DC voltage corresponding to a preset voltage set value to each of the second electrostatic adsorption electrodes provided. ,
The step of measuring the DC voltage applied to the first electrostatic adsorption electrode, and
A step of detecting that the substrate electrostatically adsorbed by the first electrostatic adsorption electrode has peeled off when the measured DC voltage exceeds a preset threshold value. A substrate processing method comprising. 前記真空容器内に処理ガスのプラズマを発生させるためのプラズマ形成部に対して高周波電力を供給する工程と、
前記第１の静電吸着電極を用いて静電吸着されている基板の剥離の発生が検知された場合に、プラズマ形成部への高周波電力の供給を停止する工程と、を含むことを特徴とする請求項６に記載の基板処理方法。 A step of supplying high-frequency power to the plasma forming portion for generating plasma of the processing gas in the vacuum vessel, and
It is characterized by including a step of stopping the supply of high frequency power to the plasma forming portion when the occurrence of peeling of the substrate electrostatically adsorbed by using the first electrostatic adsorption electrode is detected. The substrate processing method according to claim 6. 前記基板は矩形基板であり、前記第１の静電吸着電極は、前記矩形基板の辺部に沿った環状の平面形状に対応して設けられていることと、
前記第１の静電吸着電極の面積が４．２ｍ２以下となるように形成されていることと、を特徴とする請求項６または７に記載の基板処理方法。 The substrate is a rectangular substrate, and the first electrostatic adsorption electrode is provided corresponding to an annular planar shape along a side portion of the rectangular substrate.
The substrate processing method according to claim 6 or 7, wherein the first electrostatic adsorption electrode is formed so as to have an area of 4.2 m 2 or less.
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