CN110610892B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN110610892B
CN110610892B CN201910500004.9A CN201910500004A CN110610892B CN 110610892 B CN110610892 B CN 110610892B CN 201910500004 A CN201910500004 A CN 201910500004A CN 110610892 B CN110610892 B CN 110610892B
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substrate
electrode
voltage
electrostatic
electrostatic chuck
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CN110610892A (en
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宇津木康史
东条利洋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The invention provides a technique for detecting the separation of a substrate and a mounting table with high sensitivity. A mounting table for mounting a substrate is provided in a vacuum chamber, and a first electrostatic chuck electrode and a second electrostatic chuck electrode are formed in a dielectric layer provided in the mounting table with a gap therebetween. The first electrostatic chuck electrode is arranged on the peripheral part of the substrate of the carrying platform in an electrostatic adsorption mode, and the second electrostatic chuck electrode is arranged on the central part of the substrate of the carrying platform in an electrostatic adsorption mode. Direct-current voltages corresponding to preset voltage set values are applied to the first electrostatic attraction electrode and the second electrostatic attraction electrode from the first direct-current power supply and the second direct-current power supply, respectively. The voltage measuring unit measures a DC voltage applied to the first electrostatic chuck electrode, and the peeling detection unit detects that the substrate electrostatically chucked by the first electrostatic chuck electrode is peeled off when the measured DC voltage exceeds a predetermined threshold value.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method.
Background
In a manufacturing process of a Flat Panel Display (FPD), a process of performing an etching process or a film forming process on a substrate using plasma is known. This step is performed by placing a substrate on a stage in a vacuum chamber, applying high-frequency energy to a process gas supplied to a space above the stage, and generating, for example, capacitively coupled plasma or inductively coupled plasma. The mounting table used in such an apparatus may be provided with a mechanism for fixing a substrate, which is called an electrostatic chuck, for example. The electrostatic chuck has a structure in which an electrostatic attraction electrode is disposed in a dielectric layer, and a substrate can be held on the stage by an electrostatic attraction force by applying a dc voltage to the electrostatic attraction electrode.
Patent document 1 describes the following technique: when the substrate is electrostatically attracted to the mounting table, the separation of the substrate from the mounting table is detected by monitoring a direct-current voltage supplied to the electrostatic attraction electrode. In this technique, when the monitored dc voltage exceeds a predetermined threshold, it is determined that the substrate is detached from the mounting table, and the high-frequency power from the high-frequency power supply for plasma generation is stopped.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2016-174081
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a technique for detecting partial peeling between a large-sized substrate and a mounting table with high precision.
Technical solution for solving technical problem
A substrate processing apparatus according to an aspect of the present invention includes:
a mounting table disposed in a vacuum chamber for mounting a substrate to be processed, the vacuum chamber being used for performing a substrate process on the substrate using a process gas;
a first electrostatic chuck electrode formed in a dielectric layer provided on the mounting table, the first electrostatic chuck electrode being provided in accordance with a planar shape of a peripheral portion of a substrate mounted on the mounting table so as to electrostatically chuck the peripheral portion;
a second electrostatic chuck electrode formed in a dielectric layer provided on the mounting table with a space from the first electrostatic chuck electrode, the second electrostatic chuck electrode being formed in a shape corresponding to a shape of a central portion of the substrate mounted on the mounting table in order to electrostatically chuck the central portion;
a first direct current power supply and a second direct current power supply that apply direct current voltages corresponding to preset voltage set values to the first electrostatic chuck electrode and the second electrostatic chuck electrode, respectively;
a voltage measuring unit that measures a direct-current voltage applied to the first electrostatic adsorption electrode; and
and a peeling detection unit that detects peeling of the substrate electrostatically attracted by the first electrostatic attraction electrode when the dc voltage measured by the voltage measurement unit exceeds a predetermined threshold value.
Effects of the invention
According to the present invention, it is possible to detect partial peeling of a large-sized substrate from a mounting table with high accuracy.
Drawings
Fig. 1 is a longitudinal sectional side view illustrating the structure of a first embodiment of a substrate processing apparatus of the present invention.
Fig. 2 is a plan view illustrating a configuration example of the first electrostatic chuck electrode and the second electrostatic chuck electrode provided in the substrate processing apparatus.
Fig. 3 is a schematic longitudinal sectional view showing the first electrostatic chuck electrode, the second electrostatic chuck electrode and the substrate.
Fig. 4 is a flowchart illustrating a substrate processing method of the present invention.
Fig. 5 is a characteristic diagram showing temporal changes in the source power, the bias power, and the dc voltage value of the first electrostatic chuck electrode.
Fig. 6 is a plan view illustrating a second embodiment of the substrate processing apparatus of the present invention.
FIG. 7 is a plan view illustrating a third embodiment of the substrate processing apparatus according to the present invention.
Description of the reference numerals
1. Substrate processing apparatus
10. Vacuum container
3. Placing table
41. Dielectric layer
43. Electrostatic adsorption electrode
44. A first electrostatic adsorption electrode
45. A second electrostatic adsorption electrode
63. First direct current power supply
66. Second DC power supply
67. Voltage measuring unit
71. A peeling detection unit.
Detailed Description
A first embodiment of the substrate processing apparatus 1 of the present invention will be explained. As shown in fig. 1, the substrate processing apparatus 1 includes a vacuum vessel 10, for example, made of aluminum or stainless steel, connected to a ground potential. A feed-in/feed-out port 11 for receiving and delivering a substrate to be processed, for example, a rectangular glass substrate (hereinafter, referred to as "substrate") G, is formed in a side surface of the vacuum chamber 10. Reference numeral 12 in the figure denotes a gate valve for opening and closing the feed port 11. Further, an exhaust port 13 is opened in a lower side surface of the vacuum chamber 10, and the exhaust port 13 is connected to a vacuum exhaust unit 15 via an exhaust pipe 14.
A mounting table 3 on which a substrate G is mounted is disposed below the vacuum chamber 10. The substrate G may be a large rectangular substrate called G10, which is a tenth generation substrate having a rectangular shape in plan view, a long side of 3.37m, and a short side of 2.94 m. The mounting table 3 is formed in a rectangular prism shape having a rectangular planar shape, and its detailed configuration will be described later.
A spiral inductive coupling antenna 50 as a plasma forming portion is provided above the vacuum chamber 10 so as to face the mounting table 3 through a window member, not shown, formed of a dielectric or a metal. A source power supply (high-frequency power supply unit) 52 for generating plasma is connected to the inductive coupling antenna 50 via a matching unit 51. By supplying source power (high-frequency power for generating plasma) from the source power supply 52 to the inductive coupling antenna 50, an electric field for generating plasma can be generated in the vacuum chamber 10.
A shower head 2 for supplying a process gas into the vacuum chamber 10 is provided below the induction coupling antenna 50 and a window member, not shown, in the vacuum chamber 10 via an insulating portion 16. The inside of the shower head 2 is formed as a gas distribution chamber 20. The lower surface of the shower head 2 is formed to face the mounting surface of the mounting table 3, and has a large number of gas supply holes 21. A process gas supply pipe 22 for supplying a process gas to the gas distribution chamber 20 is connected to the upper surface of the showerhead 2. The process gas supply pipe 22 is provided with a supply port for supplying, for example, a gas containing CF, in this order from the upstream side 4 Or Cl 2 A process gas supply source 23 for a process gas such as an etching gas, a flow rate adjusting part M22, and a valve V22.
The mounting table 3 has a structure in which a base 31 made of a conductor and an electrostatic chuck 4 for fixing the substrate G by electrostatic adsorption are stacked in this order from below. The base 31 is provided on a spacer (spacer) 33 provided at the center of the bottom surface of the vacuum chamber 10 with the insulating layer 30 interposed therebetween, and the side surfaces of the base 31 and the spacer 33 are covered with a covering portion 35 made of, for example, ceramic. The base 31 is connected to a bias power supply (high-frequency power supply unit) 55 through a matching unit 54 by a wire 53. When a bias power as a high-frequency power is applied to the susceptor 31 by the bias power supply 55, active species of the processing gas generated in the vacuum chamber 10 can be introduced into the substrate G mounted on the mounting table 3 by the plasma.
The heat-conductive gas supply passage 32 is formed inside the mounting table 3, and a plurality of end portions on the downstream side thereof are branched and opened in a distributed manner on the upper surface of the mounting table 3, thereby forming a plurality of heat-conductive gas supply ports. In order to prevent the complication of the drawing, fig. 1 shows a part of the heat-conductive gas supply port, and fig. 3 does not show the heat-conductive gas supply passage 32 of the electrostatic chuck 4. The upstream side of the heat-conductive gas supply passage 32 is connected to a heat-conductive gas supply source 38 via a flow rate adjusting unit 37 via a heat-conductive gas supply pipe 36 provided outside the vacuum chamber 10.
Inside the spacer 33, for example, an annular refrigerant flow path 34 extending in the circumferential direction is provided. The heat transfer medium adjusted to a predetermined temperature by a cooling unit (not shown) is circulated and supplied to the refrigerant flow path 34, and the processing temperature of the substrate G can be controlled by the temperature of the heat transfer medium. The mounting table 3 is provided with lift pins, not shown, for transferring the substrate G to and from an external transfer arm, and the lift pins are provided so as to vertically penetrate through the mounting table 3 and the bottom plate portion of the vacuum chamber 10 and to be capable of protruding from and retracting into the surface of the mounting table 3.
Next, the electrostatic chuck 4 will be described. The electrostatic chuck 4 is configured to sandwich an electrostatic attraction electrode 43 between an upper dielectric layer 41 and a lower dielectric layer 42. Dielectric layers 41 and 42 are made of, for example, aluminum oxide (Al) 2 O 3 ) Etc., and the electrostatic chuck electrode 43 is made of, for example, metal.
The electrostatic chuck electrode 43 includes a first electrostatic chuck electrode 44 and a second electrostatic chuck electrode 45. The first electrostatic chuck electrode 44 (hereinafter referred to as "first electrode") is provided in accordance with the planar shape of the peripheral portion of the substrate G placed on the mounting table 3 so as to electrostatically chuck the peripheral portion. The second electrostatic chuck electrode 45 (hereinafter referred to as "second electrode") is formed by an insulating member to be electrically isolated from the first electrode 44, and is provided in a shape corresponding to the central portion of the substrate G placed on the mounting table 3 so as to electrostatically chuck the central portion.
Fig. 2 is a plan view showing a configuration example of the first electrode 44 and the second electrode 45, and the first electrode 44 is formed in a ring shape of a rectangle in plan view in accordance with a ring shape planar shape along a side portion of a rectangular substrate. The outer edge of the first electrode 44 is set to be substantially the same as the outer edge of the substrate G mounted on the stage 3, or to be slightly outside or slightly inside the outer edge of the substrate G, for example. In this example, the outer edge of the first electrode 44 is formed so as to coincide with the outer edge of the substrate G, and a peeling region P of the substrate G, which will be described later, is shown by a diagonal broken line projection in fig. 2.
The area of the first electrode 44 is formed to be, for example, 4.2m 2 The following. In this way, the area of the first electrode 44 is preferably 4.2m 2 The following is because, as described later, when the area of the electrode becomes large, the sensitivity of the peeling of the sensing substrate G is lowered. 4.2m above 2 The area (c) is a value empirically obtained from the relationship between the size of the substrate G and the detection accuracy of the peeling of the substrate G. In this way, the area of the first electrode 44 is preferably small, and therefore, the area of the first electrode 44 is preferably set smaller than the area of the second electrode 45.
The second electrode 45 is formed in a rectangular shape in plan view, and is disposed inside the first electrode 44 with a space from the first electrode 44. The distance between the first electrode 44 and the second electrode 45 is set to a value such that the annular gap region can electrically isolate the first electrode 44 from the second electrode 45. The distance of the above-mentioned separation is, for example, 5mm to 30mm. The area of the second electrode 45 is set to a size that allows the second electrode 45 to sufficiently electrostatically attract the central portion of the substrate G. In addition, the planar shape of the second electrode 45 is not limited to a rectangular shape, and may be, for example, an elliptical shape elongated in the longitudinal direction of the substrate G.
The first electrode 44 is connected to a first direct current power supply 63 via a first wiring 61 provided with a voltage adjusting resistor 62. The second electrode 45 is connected to a second dc power supply 66 via a second wiring 64 provided with a voltage adjusting resistor 65. The first dc power supply 63 and the second dc power supply 66 are configured to be able to apply a predetermined dc voltage, for example, in a range of 0 to 6000V, to the first electrode 44 and the second electrode 45, respectively, based on the voltage set value.
When the dc voltages corresponding to the preset voltage set values are applied from the first dc power supply 63 and the second dc power supply 66, the substrate G placed on the stage 3 is electrostatically attracted to the first electrode 44 and the second electrode 45 by electrostatic force. Further, a voltage measuring unit 67 for measuring a dc voltage applied to the first electrode 44 is connected to the first wiring 61, for example, between the 2 resistors 62.
The substrate processing apparatus 1 includes a control section 7. The control unit 7 is provided with a program, a memory, and a CPU, and commands (sets of steps) are incorporated in the program so that the substrate processing apparatus 1 can be driven to execute substrate processing on the substrate G. The program incorporates a command to enable the voltage measuring unit 67 to monitor the dc voltage and determine whether to stop the supply of the source power and the bias power according to a flowchart to be described later.
The control unit 7 includes, for example, a peeling detection unit 71 and a power supply control unit 72. The peeling detection unit 71 detects that the substrate G electrostatically adsorbed by the first electrode 44 is peeled from the mounting table 3 when the dc voltage measured by the voltage measurement unit 67 exceeds a predetermined threshold value. The threshold value can be determined based on a value grasped by experiments, simulations, or the like in advance, and is set to a value such that a dc voltage value (steady value) that can be stably measured in plasma processing has a margin of about 2% to 5%, for example. Since the detection accuracy of the voltage measuring unit 67 is also affected by noise, the threshold value may have to be increased depending on the magnitude of the noise. However, from the viewpoint of suppressing the occurrence of abnormal discharge, it is preferable to suppress the threshold value to a value having a margin of 5% with respect to the stable value. The threshold value is stored in the memory of the control unit 7.
When the peeling of the substrate G is detected, the power supply control section 72 outputs a control signal for stopping the supply of the high-frequency power from the source power supply 52, for example. The power supply control unit 72 in this example is configured to output a control signal for stopping the supply of the high-frequency power from the bias power supply 55, for example, when the peeling of the substrate G is detected. For example, the voltage measuring section 67 measures a dc voltage at intervals of several msec (for example, at intervals of 1 msec), compares the measured data with the threshold value, and the peeling detecting section 71 determines whether or not the substrate G is peeled. When the peeling of the substrate G is detected by the peeling detection section 71, the control section 7 outputs a warning indicating that the substrate G is peeled, for example. Then, the power supply control unit 72 outputs a control signal for stopping the supply of the high-frequency power from the source power source 52 and the bias power source 55. In this manner, the control section 7 controls the detection of the peeling of the substrate.
In addition, the source power is unstable at the start of the operation of the substrate processing apparatus 1, and the measurement result of the dc voltage by the voltage measuring unit 67 may be affected by the source power. Therefore, the control unit 7 stores a determination reference value (variation range) for determining the variation of the power values of the source power and the bias power generated at the start of the operation. Therefore, when the determination of stopping the supply of the source power and the bias power is performed, it is possible to determine whether or not the power value supplied from the source power supply 52 is within a predetermined variation range. Similarly, it may be configured to determine whether or not the power value supplied from the bias power supply 55 is within the variation range of the bias power.
The substrate processing apparatus 1 of this example uses the dc voltage value applied to the first electrode 44 measured by the voltage measuring unit 67 in order to detect the separation of the substrate G from the mounting table 3. Next, the relationship between the peeling of the substrate G and the dc voltage applied to the first electrode 44 will be described with reference to fig. 3. Fig. 3 is a longitudinal sectional view schematically showing the electrostatic chuck 4 and the substrate G, the right side of fig. 3 shows a state where the substrate G is normally held on the stage 3, and the left side of fig. 3 shows a state where a part of the substrate G is peeled off from the stage 3.
In the substrate processing apparatus 1, the substrate G and the electrostatic adsorption electrode 43 are separated from each other by the dielectric layer 41 on the upper layer, and thus the capacitor 40 is formed. In a state where plasma is generated in the vacuum chamber 10, the substrate G is grounded via the plasma, and dc voltages are applied to the first electrode 44 and the second electrode 45 from the first dc power supply 63 and the second dc power supply 66, respectively. Therefore, the substrate G is negatively charged, and the first electrode 44 and the second electrode 45 are positively charged. Due to these charges, the first electrode 44, the second electrode 45, and the substrate G are attracted to each other by electrostatic attraction, and thus the substrate G can be held by suction on the stage 3.
For example, as shown on the right side of fig. 3, when the substrate G is held on the mounting table 3 in a horizontal posture, the following relationships of the expressions (1) and (2) are established.
Q＝CV…(1)
C＝ε0×εr×(S/d)…(2)
Q: charge of the capacitor 40
C: electrostatic capacity of capacitor 40
V: potential difference between the substrate G and the first electrode 44
ε 0: dielectric constant in vacuum
ε r: relative permittivity of dielectric layer 41
S: area of the substrate G
d: distance between substrate G and first electrode 44 (thickness of dielectric layer 41)
After the source power and the bias power are stabilized, the charge Q of the capacitor 40 is constant. Therefore, when the substrate G is not peeled off from the mounting table 3 and the distance d between the substrate G and the first electrode 44 is constant, the dc voltage value does not change. On the other hand, as shown in the left side of fig. 3, when the substrate G is peeled off from the mounting table 3, the distance Δ d between the mounting table 3 and the substrate G becomes large, and the distance between the substrate G and the first electrode 44 becomes (d + Δ d).
As a result, the distance between the substrate G and the electrode 44 is increased, and the capacitance C of the capacitor 40 is reduced according to equation (2). Since the charge Q of the capacitor 40 does not change before and after the substrate G is peeled off from the stage 3, the potential difference V between the substrate G and the first electrode 44 increases according to equation (1). Further, since the substrate G is grounded via the plasma, the potential of the first electrode 44 changes. That is, the dc voltage value of the first electrode 44 increases. In this manner, since there is a correlation between the peeling of the substrate G from the mounting table 3 and the dc voltage value applied to the first electrode 44, the peeling of the substrate G from the mounting table 3 can be detected by measuring the dc voltage value.
On the other hand, it is known that the peeling of the substrate from the mounting table 3 is more likely to occur only in a part of the peripheral edge portion of the substrate G than in the same manner over the entire surface of the substrate G. Further, it was found that even when the area of the substrate G is increased, the area of the peeling region P tends not to be increased more than before the increase in size. In addition, regardless of the change in the area of the substrate G, the voltage applied to the first electrode 44 and the second electrode 45 when the substrate G is suction-held is substantially constant.
The inventor finds that: for example, in the substrate G of the 6 th generation, so-called G6, the electrostatic chuck electrode 43 is not divided, and peeling of the substrate G can be detected from the dc voltage measured by the voltage measuring unit by the technique described in the patent document 1. The G6 substrate G has a long side of 1.85m, a short side of 1.5m, and an area of 2.78m 2 Even with such a size, the substrate is peeled from the mounting table 3 at the peripheral edge portion of the substrate, and the size of the peeled area tends to be almost unchanged regardless of the size of the substrate. Therefore, when the subsequent substrate G becomes larger in size, as described below, it may become difficult to detect a voltage change at the time of occurrence of peeling.
That is, as described using the equation (1) and fig. 3, in the method of detecting peeling of the substrate G from a change in the measured value of the dc voltage, the increase amount of the dc voltage depends on the area of the peeling region P. Therefore, when the size of the peeling region P is almost constant, the area of the peeling region P becomes relatively small with respect to the size of the substrate G as the substrate G becomes larger. Therefore, if the electrostatic adsorption electrode and the substrate G have the same size, the increase in the dc voltage when the substrate G is peeled off is reduced in accordance with the increase in the size of the substrate, and the measurement sensitivity is lowered.
For the reasons described above, in the present embodiment, the electrostatic chuck electrode 43 is divided into: a second substrate corresponding to the peripheral portion of the substrate G where peeling easily occursAn electrode 44; and a second electrode 45 corresponding to a central portion of the substrate G. As a result, the area of the first electrode 44 can be suppressed to be smaller than that of the substrate G, and therefore, even if the substrate G is increased in size, the measurement sensitivity of the dc voltage value can be prevented from being lowered. In this example, the area of the first electrode 44 is set to 4.2m 2 The following. This value is an area corresponding to about 1.5 times the area of the G6 substrate G, and is empirically determined by detecting the size of the peeled substrate G by the conventional method described in patent document 1. In this manner, the area of the first electrode 44 was set to 4.2m 2 Hereinafter, the local peeling occurring at the peripheral portion of the larger substrate G can be detected with high sensitivity. Although the lower limit of the area of the first electrode 44 is not particularly limited, from the viewpoint of suppressing the detection sensitivity from becoming too high in accordance with an increase in the dc voltage, 0.9m can be exemplified 2 (G6 about 1/3 of the area of the substrate G).
Next, the operation of the substrate processing apparatus 1 will be described with reference to the flowchart of fig. 4, taking the etching process of the substrate G as an example. First, the substrate G is placed on the placing table 3 by the cooperative action of the transport arm that enters from the outside and the lift pins, not shown. Next, after the gate valve 12 is closed, a heat conductive gas is supplied between the mounting table 3 and the substrate G. Further, based on the information described in the processing recipe and the like, the set dc voltages are applied from the first dc power supply 63 and the second dc power supply 66 to the first electrode 44 and the second electrode 45 of the electrostatic chuck 4, respectively.
Thereby, the first electrode 44 and the second electrode 45 attract the substrate G to each other, and the substrate G can be held on the stage 3 by suction. Next, the vacuum chamber 10 is supplied with a gas containing, for example, CF gas from the shower head 2 4 Or Cl 2 The processing gas such as the etching gas is evacuated from the exhaust port 13, and the pressure in the vacuum chamber 10 is adjusted to a predetermined pressure.
Next, the source power starts to be applied from the source power supply 52 to the inductive coupling antenna 50, and the bias power starts to be applied from the bias power supply 55 to the base 31 (step S1). For example, the source power is applied first, and after the source power rises and stabilizes, the bias power is applied. Then, the control unit 7 compares the respective measured values of the source power and the bias power with the variation range, and determines whether or not the source power and the bias power have stabilized (step S2). When it is determined that these powers have stabilized (step S2: YES), it can be confirmed that the DC voltage does not fluctuate due to the influence of fluctuations in the source power and the bias power. Therefore, the detection control of the substrate peeling is started (step S3).
In the vacuum chamber 10, a high-frequency electric field is generated between the stage 3 and the shower head 2 by applying a source power to the inductive coupling antenna 50, whereby the process gas supplied into the vacuum chamber 10 is excited to generate plasma of the process gas. Next, by applying a bias power from the bias power supply 55 to the susceptor 31, positive ions in the plasma are introduced to the substrate G by a dc bias potential generated on the substrate G via the stage 3. In this way, plasma etching can be uniformly performed on the entire surface of the substrate G by plasma.
In the detection control of the substrate peeling, the value of the direct-current voltage applied to the first electrode 44 is measured at intervals of, for example, 1msec by the voltage measuring section 67 (step S4). Then, in step S5, it is determined whether or not the measured DC voltage value exceeds a threshold value, and if it is not more than the threshold value, it is determined that the substrate G is not peeled (step S5: no), and the process is continued by returning to step S4.
On the other hand, when the DC voltage value exceeds the threshold value, it is determined that the substrate G is peeled off (step S5: YES), and in step S6, for example, a warning is outputted and a stop signal is outputted by the power supply control section 72 to the source power supply 52 and the bias power supply 55 which supply the high frequency power into the vacuum chamber 10 for the plasma processing of the substrate G. In this way, the supply of the high-frequency power (source power and bias power) is stopped, and the plasma in the vacuum chamber 10 is extinguished, thereby ending the process.
According to this embodiment, the dc voltage applied to the first electrode 44 corresponding to the substrate peripheral portion of the substrate G where peeling is likely to occur is measured, and when the measured dc voltage exceeds the threshold value, it is detected that peeling has occurred in the substrate G. Therefore, even if the substrate G is large, the first electrode 44 for measuring the dc voltage value can be prevented from being large, and thus the increase amount of the dc voltage accompanying the occurrence of the partial peeling can be sufficiently grasped. Therefore, even in the case of a large substrate G such as G10, for example, the detection sensitivity of the substrate peeling can be improved, and the partial peeling can be detected.
Specifically, the area of the G10 substrate G is 3.57 times the area of the G6 substrate. Therefore, when the electrostatic attraction electrode and the substrate G have the same size and the peeling region P has the same size, the amount of change in the dc voltage of the G10 substrate G is 0.28 times that of the G6 substrate, and thus the detection sensitivity is reduced. In the above embodiment, the area of the first electrode 44 is set to 4.2m 2 The occurrence of peeling of the substrate can be detected with high sensitivity as follows.
By obtaining the dc voltage value applied to the first electrode 44 in this manner, when the substrate G is peeled from the mounting table 3, the peeling of the substrate G can be immediately detected. Since the dc voltage is measured at intervals of 1msec by the voltage measuring unit 67, for example, even if the substrate G is peeled off from the mounting table 3, the peeling can be detected after several msec. In this way, the peeling of the substrate G can be detected at an early stage, and after the peeling occurs, the operation of stopping the supply of the high-frequency power for plasma generation, etc. can be executed promptly. This can avoid the plasma processing from being continued in a state where the substrate G is peeled off from the mounting table 3, and can prevent the occurrence of abnormal discharge due to the entry of plasma reactive species from the peeled portion and the damage of the mounting table 3 due to the plasma reactive species.
Here, fig. 5 shows temporal changes in the source power, bias power, and measured dc voltage value when abnormal discharge occurs during plasma etching. The vertical axis in fig. 5 represents the levels of the source power and the bias power and the dc voltage value, and the horizontal axis represents time. The source power starts to be applied at time t1, and the bias power starts to be applied at time t 2. After the source power and the bias power are both stabilized, the substrate separation detection control is started at time t3, and the dc voltage value is stabilized to a constant value while the source power and the bias power are stabilized.
Time t5 is a time (timing) when the abnormal discharge occurs, and both the source power and the bias power fluctuate due to the abnormal discharge. In addition, the dc voltage value stabilized at a constant value also sharply decreases. Further, before time t5, the peeling of the substrate G from the mounting table 3 was confirmed at time t4, and the dc voltage value of the first electrode 44 at this time was increased, and it was confirmed that the peeling corresponded to the variation of the dc voltage value. In fig. 5, the dc voltage value indicated by the broken line is the case where the electrostatic attraction electrode having the same size as the substrate is used, and thus, when the electrostatic attraction electrode is large, the amount of change in the dc voltage becomes small. Accordingly, it can be understood that peeling of the substrate G can be detected with high sensitivity by electrostatically attracting the peripheral portion of the substrate G using the first electrode 44 and measuring a change in the dc voltage value of the electrode 44.
Next, a second embodiment of the substrate processing apparatus according to the present invention will be described with reference to fig. 6. The substrate processing apparatus of this example further includes a second voltage measuring unit 68 for measuring a dc voltage applied to the second electrode 45 when the voltage measuring unit 67 according to the first embodiment is used as the first voltage measuring unit. The peeling detection unit 71 is configured to detect that the substrate G is peeled off when the first dc voltage value measured by the first voltage measurement unit 67 exceeds a first threshold value and when the second dc voltage value measured by the second voltage measurement unit 68 exceeds a second threshold value.
In this embodiment, as in the first embodiment, for example, after the source power supplied from the source power supply 52 and the bias power supplied from the bias power supply 55 are stabilized, the substrate separation detection control is started. In the detection control of the substrate peeling, the first direct-current voltage value applied to the first electrode 44 is measured by the first voltage measuring part 67, and the second direct-current voltage value applied to the second electrode 45 is measured by the second voltage measuring part 68.
Then, it is determined whether the measured first and second dc voltage values exceed the first and second threshold values, respectively, and if the measured first and second dc voltage values are below the threshold values, it is determined that the substrate G is not peeled off, and the process is continued. On the other hand, when the first dc voltage value exceeds the first threshold value, it is determined that peeling has occurred at the peripheral edge portion of the substrate G. Then, for example, a warning is output, and the power supply control unit 72 outputs a stop signal to the source power source 52 and the bias power source 55 to stop the supply of the high-frequency power (source power and bias power). When the second dc voltage value exceeds the second threshold value, it is determined that peeling has occurred in the central portion of the substrate G, and a warning, for example, is output.
According to this embodiment, since the local peeling of the central portion can be detected as well as the peripheral portion of the substrate G, it is possible to detect, for example, a case where the substrate G is warped and the central portion of the substrate is peeled off from the mounting table 3. Such information is effective for evaluating the uniformity of the processing state and the like. Further, when only the central portion of the substrate G is peeled off, since the occurrence of abnormal discharge and the entry of plasma active species are less likely to occur, an example in which only a warning is generated is shown, but the supply of the high-frequency power may be stopped similarly to the case in which the peeling of the peripheral portion occurs.
Next, a third embodiment of the substrate processing apparatus according to the present invention will be described with reference to fig. 7. The first electrode of this example is divided into a plurality of divided electrodes along the circumferential direction of the peripheral portion of the substrate G. Fig. 7 shows an example in which the first electrode 8 is divided into 4 divided electrodes 81, 82, 83, and 84. In this example, one divided electrode is provided at one side corresponding to 4 sides of the substrate G, the divided electrodes are spaced apart from each other, and the respective divided electrodes are arranged spaced apart from each other with the second electrode 45. Then, 2 divided electrodes facing each other constitute a group, a first dc power supply is provided for each of the groups, and a dc voltage corresponding to a preset voltage setting value is applied to the divided electrodes included in each group.
In the example of fig. 7, the divided electrodes 81 and 83 form a first group, and the divided electrodes 81 and 83 are connected to a first dc power supply 92 for the first group via wires 91. The divided electrodes 82 and 84 form a second group, and the divided electrodes 82 and 84 are connected to a first dc power supply 94 for the second group via wires 93. Reference numerals 95 and 96 denote voltage adjusting resistors, respectively, and the wirings 91 and 93 are connected to voltage measuring units 97 and 98, respectively. The voltage measuring units 97 and 98 are configured to measure, for each of the above-described groups, the dc voltages applied to the divided electrodes 81, 83/82, and 84 included in the group.
The peeling detection section 71 is configured to detect that the substrate G electrostatically adsorbed by using the divided electrodes 81, 83/82, 84 included in the group is peeled off when the dc voltage measured by the voltage measurement sections 97, 98 for each group exceeds a predetermined threshold value. The threshold values are set in groups. The other configurations are the same as those of the first embodiment.
In this embodiment, similarly to the first embodiment, for example, after the source power supplied from the source power supply 52 and the bias power supplied from the bias power supply 55 are stabilized, the substrate separation detection control is started. In the detection control of the substrate peeling, the voltage measuring section 97 measures the dc voltage value applied to the divided electrodes 81 and 83 included in the first group. Further, the voltage measuring unit 98 measures the dc voltage value applied to the divided electrodes 82 and 84 included in the second group.
Then, it is determined whether or not the measured dc voltage values of the divided electrodes 81, 83/82, 84 of each group exceed the respective threshold values, and if the dc voltage values are not more than the respective threshold values, it is determined that the substrate G is not peeled off, and the process is continued. On the other hand, if the threshold value is exceeded, it is determined that peeling has occurred at the peripheral edge portion of the substrate G. Then, for example, a warning is output, and the power supply control unit outputs a stop signal to the source power supply 52 and the bias power supply 55 to stop the supply of the high-frequency power (source power and bias power). In this example, the value of the dc voltage applied to the second electrode 45 may be measured, and when the measured value exceeds a threshold value, it may be determined that peeling has occurred in the central portion of the substrate G.
According to this embodiment, since the first electrode is further divided into a plurality of parts, the peeling detection of the substrate G with higher sensitivity can be performed. In addition, since the dc voltage is measured for each divided electrode group, the separation region P can be easily determined.
In the above, the peeling detection unit and the voltage measurement unit may be provided in the power supply unit of the source power supply 52 without passing through the control unit for controlling the substrate processing apparatus, and the voltage measurement unit may be any device capable of directly or indirectly monitoring the potential change in the electrostatic attraction electrode. In the above example, the substrate G is determined to be peeled off from the mounting table 3 when the dc voltage once exceeds the threshold value, but the substrate G may be detected to be peeled off when the dc voltage continuously exceeds the threshold value a plurality of times within a predetermined period of time, taking into account the influence of noise of the dc voltage.
The plasma forming portion provided in the substrate processing apparatus 1 is not limited to the inductive coupling antenna 50, and an upper electrode may be provided so as to face the mounting table (lower electrode), and plasma may be formed by capacitive coupling between the upper electrode and the lower electrode. In this case, a high-frequency power is supplied from a high-frequency power supply unit for plasma generation to one of the mounting table and the upper electrode to form a plasma.
In the above, the substrate G of the processing object is not necessarily limited to the rectangular substrate. The substrate processing using the process gas performed in the vacuum chamber is not limited to etching, and may be film forming. Further, the plasma does not necessarily have to be formed in the vacuum chamber, and can be applied to, for example, thermal CVD processing.
The embodiments disclosed herein are merely illustrative in all respects and should not be construed as restrictive. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

Claims (8)

1. A substrate processing apparatus, comprising:
a stage for placing a substrate to be processed in a vacuum chamber for performing a substrate process on the substrate using a process gas;
a first electrostatic chuck electrode formed in a dielectric layer provided on the mounting table, the first electrostatic chuck electrode being provided in accordance with a planar shape of a peripheral portion of a substrate mounted on the mounting table so as to electrostatically chuck the peripheral portion;
a second electrostatic chuck electrode formed in a dielectric layer provided on the mounting table with a space from the first electrostatic chuck electrode, the second electrostatic chuck electrode being provided in a shape corresponding to a central portion of the substrate mounted on the mounting table in an electrostatic chuck manner;
a first direct current power supply and a second direct current power supply that apply direct current voltages corresponding to preset voltage set values to the first electrostatic chuck electrode and the second electrostatic chuck electrode, respectively;
a voltage measuring section that measures a direct-current voltage applied to the first electrostatic adsorption electrode; and
and a peeling detection unit that detects that the substrate electrostatically adsorbed by the first electrostatic adsorption electrode is peeled off when the dc voltage measured by the voltage measurement unit exceeds a predetermined threshold value.
2. The substrate processing apparatus according to claim 1, wherein:
a second voltage measuring section including a second voltage measuring section that measures a direct-current voltage applied to the second electrostatic adsorption electrode when the voltage measuring section is taken as the first voltage measuring section;
the peeling detection unit further detects that the substrate electrostatically attracted by the second electrostatic attraction electrode is peeled off when the dc voltage measured by the second voltage measurement unit exceeds a predetermined threshold value.
3. The substrate processing apparatus according to claim 1, wherein:
the first electrostatic chuck electrode is divided into a plurality of divided electrodes along a circumferential direction of the peripheral portion of the substrate,
when the plurality of divided electrodes are divided into a plurality of groups, the apparatus includes a plurality of first direct current power supplies provided corresponding to the plurality of groups, respectively, and applies a direct current voltage corresponding to a preset voltage setting value to the divided electrodes included in the corresponding group, and the voltage measuring unit measures the direct current voltage applied to the divided electrodes included in the group for each group,
the peeling detection unit detects that the substrate electrostatically attracted by the divided electrodes included in the group is peeled off when the dc voltage measured for each group by the voltage measurement unit exceeds a predetermined threshold value.
4. The substrate processing apparatus according to any one of claims 1 to 3, comprising:
a high-frequency power supply unit configured to supply high-frequency power to a plasma formation unit configured to generate plasma of a process gas in the vacuum chamber; and
and a power supply control unit that outputs a control signal for stopping the supply of the high-frequency power from the high-frequency power supply unit when the peeling detection unit detects that the substrate electrostatically adsorbed by the first electrostatic adsorption electrode is peeled.
5. The substrate processing apparatus according to any one of claims 1 to 3, wherein:
the substrate is a rectangular substrate, the first electrostatic chuck electrode is provided corresponding to a planar shape of a ring along a side portion of the rectangular substrate,
the first electrostatic adsorption electrode has an area of 4.2m 2 The following.
6. A method of processing a substrate, comprising:
a step of placing a substrate to be processed on a placing table provided in a vacuum chamber for performing a substrate process on the substrate using a process gas;
a step of electrostatically chucking the substrate placed on the placing table by applying a dc voltage corresponding to a preset voltage set value to a first electrostatic chucking electrode and a second electrostatic chucking electrode, respectively, the first electrostatic chucking electrode being formed in a dielectric layer provided on the placing table and provided in accordance with a planar shape of a peripheral portion of the substrate placed on the placing table for electrostatically chucking the peripheral portion; the second electrostatic adsorption electrode is formed in a dielectric layer provided on the mounting table, and is provided in a shape corresponding to a central portion of a substrate mounted on the mounting table so as to electrostatically adsorb the central portion;
a step of measuring a direct-current voltage applied to the first electrostatic chuck electrode; and
and detecting that the substrate electrostatically adsorbed by the first electrostatic adsorption electrode is peeled off when the measured dc voltage exceeds a predetermined threshold value.
7. The substrate processing method of claim 6, comprising:
supplying a high-frequency power to a plasma forming portion for generating a plasma of a process gas in the vacuum chamber; and
and stopping the supply of the high-frequency power to the plasma formation portion when the peeling of the substrate electrostatically adsorbed by the first electrostatic adsorption electrode is detected.
8. The substrate processing method according to claim 6 or 7,
the substrate is a rectangular substrate, the first electrostatic chuck electrode is provided corresponding to a planar shape of a ring along a side portion of the rectangular substrate,
the first electrostatic adsorption electrode has an area of 4.2m 2 The following.
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