CN104715988B - Plasma processing device and DC bias voltage measuring method for substrate of plasma processing device - Google Patents
Plasma processing device and DC bias voltage measuring method for substrate of plasma processing device Download PDFInfo
- Publication number
- CN104715988B CN104715988B CN201310695325.1A CN201310695325A CN104715988B CN 104715988 B CN104715988 B CN 104715988B CN 201310695325 A CN201310695325 A CN 201310695325A CN 104715988 B CN104715988 B CN 104715988B
- Authority
- CN
- China
- Prior art keywords
- trigger switch
- power
- integrating circuit
- clock
- pulse signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a plasma processing device and a DC bias voltage measuring method for a substrate of the plasma processing device. A pulse trigger switch is used for separating DC bias voltages under pulse on-off states, the rear end of a clock trigger switch is connected with a high-level integral circuit and a low-level integral circuit, the clock trigger switch carries out switching with the rising edge and the falling edge of clock signals used as signals and is connected with the high-level integral circuit or the low-level integral circuit at the rear end, the integral of the DC bias voltages at a high value and the integral of the DC bias voltages at a low value are averaged to obtain continuous analog signals, and therefore monitoring of DC bias voltages on the surface of the substrate is achieved. By means of the technical scheme, sampling frequency can be greatly lowered, and a sampling circuit can be simplified.
Description
Technical field
The present invention relates to plasma treatment technique field, more particularly to a kind of substrate surface DC offset voltage that monitors
Technical field.
Background technology
In plasma processing process, frequently with electrostatic chuck（Electro Static Chuck, abbreviation ESC）
Workpiece is waited to fix, support and transmit substrate (Wafer).Electrostatic chuck is arranged in reaction chamber, and it uses electrostatic to draw
The mode of power, and non-mechanical means fix substrate, can reduce to the possible mechanical loss of substrate, and make electrostatic chuck and base
Piece is completely attached to, and is conducive to heat transfer.In course of reaction, reacting gas is passed through to reaction chamber, and radio frequency is applied to reaction chamber
Power, usual radio-frequency power is applied on the conductor pedestal below electrostatic chuck, radio-frequency power mainly include RF source power and
RF bias power, RF source power and RF bias power collective effect, by reacting gas ionization generation plasma, wait from
Daughter carries out plasma reaction with substrate, completes the PROCESS FOR TREATMENT to substrate.In this course, due to the spy of plasma
Property and reaction chamber in some Parameter Conditions, substrate surface can produce DC offset voltage, the size of the Dc bias represents etc.
Some states of gas ions, the size of the Dc bias plasmoid meaned in reaction chamber that changes changes,
Therefore need to be monitored it.
Under normal condition, the output in radio frequency power source and RF bias power source is constant, the direct current biasing electricity of substrate surface
Pressure is relatively stablized, and signal acquisition can be directly carried out to it, realizes the monitoring to substrate surface DC offset voltage.But
, it is necessary to set radio frequency power source or RF bias power source is output as pulse output, the substrate surface in some applications
DC offset voltage can with RF source power or RF bias power output size change and change, in order to realize
Monitoring to DC offset voltage, plasma reaction device needs to increase the sample frequency to DC offset voltage, for needing
Will with year as the equipment of unit record data for will certainly waste very big data space, while increased monitoring difficulty.Give
Existing plasma processing apparatus increase burden.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention provides a kind of plasma processing apparatus, including a vacuum reaction chamber,
The vacuum reaction chamber lower section sets an electrostatic chuck for supporting substrate, and the electrostatic chuck lower section sets a pedestal, the base
Simultaneously as the bottom electrode of the vacuum reaction chamber, the bottom electrode connects radio frequency power source, the radio frequency power source output to seat
Pulse power, the substrate lower section sets DC offset voltage detection pin, and the detection pin connects a clock trigger switch, institute
The rear end for stating clock trigger switch connects high level integrating circuit and low level integrating circuit respectively.
Preferably, the radio-frequency power includes RF source power and RF bias power, the RF source power or radio frequency
Bias power at least one exports pulse power.
Preferably, the pulse frequency of the radio-frequency power is identical with the clock frequency of the clock trigger switch.
Preferably, the RF source power is output as pulse signal, and the pulse signal is opened as clock triggering
The clock signal of pass, when the output pulse signal of the radio-frequency power is rising edge, the clock trigger switch is low with rear end
Level integrating circuit is connected, and when the output signal is trailing edge, the clock trigger switch is electric with the high level integration of rear end
Road is connected.
Preferably, when the RF bias power is output as pulse signal, the pulse signal is touched as the clock
The clock signal of switch is sent out, when the output pulse signal of the radio-frequency power is rising edge, the clock trigger switch and rear end
High level integrating circuit be connected, when the output signal is trailing edge, the low level of the clock trigger switch and rear end is accumulated
Parallel circuit is connected.
Preferably, when the output of the RF source power and the RF bias power is pulse signal, the pulse
Signal as the clock trigger switch clock signal, it is described when the output pulse signal of the radio-frequency power is rising edge
Clock trigger switch is connected with the high level integrating circuit of rear end, and when the output signal is trailing edge, the clock triggering is opened
Pass is connected with the low level integrating circuit of rear end.
Preferably, the frequency range of the RF bias power is 400KHz to 13.56MHz, the RF source power
Frequency range is 27MHz to 120MHz.
Preferably, the pulses range of the RF bias power and the RF source power is 50Hz to 10KHz, is accounted for
Empty is 10% to 90% than scope.
Further, the invention also discloses substrate surface DC offset voltage in one kind measurement plasma processing apparatus
Method, comprise the following steps：The detection pin of one detection DC offset voltage is placed on the substrate surface, the detection pin
Rear end connects a clock trigger switch, and the clock trigger switch rear end connects a high level integrating circuit and a low level respectively
Integrating circuit；Adjust the output pulse signal frequency of the radio-frequency power；Using the pulse output signals frequency as it is described when
The regulating frequency of clock trigger switch, when the output pulse signal of the radio-frequency power is rising edge or trailing edge, when described
Clock trigger switch is connected respectively to the high level integrating circuit or low level integrating circuit, the high level integrating circuit or
The high level pulse and low level pulse of the DC offset voltage that person's low level integrating circuit is detected to the detection pin respectively
It is integrated, obtains average value when average value of the DC offset voltage in high level and low level, then it is carried out respectively
Signal acquisition, realizes the monitoring to substrate surface DC offset voltage.
Preferably, during the sampling of the average value to the DC offset voltage during average value and low level in high level
Between interval be more than or equal to 0.1s.
The advantage of the invention is that：DC offset voltage under discrete pulse ON-OFF is switched by a pulse-triggered,
The clock trigger switch rear end connects a high level integrating circuit and a low level integrating circuit, the clock trigger switch with
The rising edge and trailing edge of clock signal are switched over for signal, and the high level integrating circuit or low level with rear end are accumulated respectively
Parallel circuit is attached, and realizes integrating to average in high value and lower value respectively by DC offset voltage obtaining the progressive die
Intend signal, so as to realize the monitoring to substrate surface DC offset voltage.By using technical solutions according to the invention, can be with
Sample frequency is substantially reduced, simplifies sample circuit.
Brief description of the drawings
The detailed description made to non-limiting example with reference to the following drawings by reading, further feature of the invention,
Objects and advantages will become more apparent upon：
Drawings described below constitutes the part of this specification, and different embodiments are listed together with the description, to explain
With illustrate spirit of the invention.The following drawings does not depict all technical characteristics of specific embodiment, does not depict yet
The actual size and actual proportions of part.
Fig. 1 shows the structural representation of plasma processing apparatus of the present invention；
Fig. 2 shows that RF source power is the pulse schematic diagram of DC offset voltage when pulse is exported；
Fig. 3 shows that RF bias power is the pulse schematic diagram of DC offset voltage when pulse is exported；
Fig. 4 shows that RF source power and RF bias power are the pulse signal of DC offset voltage when pulse is exported
Figure；
Fig. 5 shows the detection device schematic diagram of DC offset voltage of the present invention.
Specific embodiment
The invention discloses a kind of plasma processing apparatus and its method for measurement substrate DC offset voltage, to make this
The above-mentioned purpose of invention, feature and advantage can become apparent it is understandable, with reference to the accompanying drawings and examples to of the invention specific
Implementation method is described in detail.
Fig. 1 shows the structural representation of plasma processing apparatus of the present invention, the plasma processing apparatus bag
A vacuum reaction chamber 100 is included, the lower section of vacuum reaction chamber 100 sets an electrostatic chuck 110 for supporting substrate 60, electrostatic chuck 110
Lower section sets a pedestal 120, and pedestal 120 is simultaneously as the bottom electrode of the vacuum reaction chamber 100, the connection radio frequency of bottom electrode 120
Power source, the radio-frequency power includes RF source power 130 and RF bias power 140, RF source power 130 and radio-frequency bias
Power 140 at least one output pulse power.Reacting gas in reacting gas source is by simultaneously as gas spray
Top electrode enters in vacuum reaction chamber 100, and dissociated generation plasma in the presence of radio-frequency power, and plasma is carried out to substrate
Body treatment, completes etching technics., when processing substrate due to the characteristic of plasma, meeting is in substrate surface for plasma
Produce DC offset voltage, the size of the DC offset voltage has reacted some parameter states of plasma, if direct current
Bias voltage size changes, and illustrates that the plasmoid in reaction chamber there occurs change, it is necessary to be adjusted, Yi Mianying
Ring plasma process process.In addition, the Dc bias on the surface of substrate 60 also determine on the electrostatic chuck 110 apply it is straight
Stream voltage swing, the size of the DC voltage determines electrostatic attraction of the electrostatic chuck to substrate 60, on electrostatic chuck
DC voltage can be offset by the DC offset voltage of substrate surface, if be not monitored to DC offset voltage, and then feed back
DC voltage on adjustment electrostatic chuck 110, can cause electrostatic chuck 110 to cause substrate to depart from the electrostatic attraction deficiency of substrate
The fixation of electrostatic chuck.Cause PROCESS FOR TREATMENT accident.
Under normal condition, the output in radio frequency power source and RF bias power source is constant, the direct current biasing electricity of substrate surface
Pressure is relatively stablized, and signal acquisition can be directly carried out to it, realizes the monitoring to substrate surface DC offset voltage.But
, it is necessary to set radio frequency power source or RF bias power source is output as pulse output in application of the present invention, and correspond to
The substrate surface DC offset voltage at moment can with radio frequency export pulse change change, when pulse frequency be 50Hz extremely
10kHz, if directly sampled to the DC offset voltage that the radio frequency under the frequency range exports corresponding substrate surface, needs
Sample frequency that will be very high, because plasma processing apparatus are constantly in working condition, so sampled result needs always
Record, for needing that with year very big data space certainly will be wasted as the etching apparatus of unit record data, while increasing
Monitoring difficulty.Increased burden to existing plasma processing apparatus.
Present inventor has found that DC offset voltage is with RF power pulses by substantial amounts of data acquisition and research
The change of output carries out cyclically-varying, and Fig. 2 to Fig. 4 shows the source power and bias power of DC offset voltage radio frequency power
The schematic diagram of change, by be can be seen that in Fig. 2 when RF source power is that pulse is exported, when RF bias power is constant output,
Substrate surface DC offset voltage size is also pulse type, and when the output pulse signal of RF source power is rising edge,
The size of DC offset voltage is trailing edge, when the output pulse signal of RF source power is trailing edge, DC offset voltage
Size be rising edge.By be can be seen that in Fig. 3 when RF source power is constant output, RF bias power is that pulse is exported
When, substrate surface DC offset voltage size is also pulse type, and when the output pulse signal of RF bias power is rising
Along when, the size of DC offset voltage is rising edge, and when the output pulse signal of RF bias power is trailing edge, direct current is inclined
The size for putting voltage is trailing edge.Exported when RF source power and RF bias power are all pulse by be can be seen that in Fig. 4
When, substrate surface DC offset voltage size is also pulse type, and when the output pulse signal of RF bias power is rising
Along when, the size of DC offset voltage is rising edge, and when the output pulse signal of RF bias power is trailing edge, direct current is inclined
The size for putting voltage is trailing edge.The pulse change frequency of the DC offset voltage of substrate surface is can be seen that by above-mentioned accompanying drawing
Pulse output frequencies with radio-frequency power are identical, and using the feature, Fig. 5 shows the technical side of present invention detection DC offset voltage
Case.
Fig. 5 shows the detection device schematic diagram of DC offset voltage of the present invention, and a direct current is set in the top of substrate 60
Bias voltage detects pin 10, and detection pin 10 connects a clock trigger switch 20, and the rear end of clock trigger switch 20 connects height respectively
Level integrating circuit 30 and low level integrating circuit 40, the clock trigger switch 20 are controlled by a clock signal 50, when described
The frequency of clock signal 50 is identical with the pulse signal frequency of the radio-frequency power.Under the control of clock signal 50, when clock letter
Number in rising edge or trailing edge when, clock trigger switch 20 is switched over, respectively with high level integrating circuit 30 or low level
Integrating circuit 40 is connected.Corresponding high level integrating circuit 30 and low level integrating circuit 40 start inclined to the direct current in the cycle
It is integrated respectively when putting voltage positioned at high level and during low level and is averaged, due to high level integrating circuit 30 and low level
Integrating circuit 40 is analog circuit, can in real time be integrated evaluation, then profit to the DC offset voltage value that detection pin 10 is measured
Height electricity is carried out on the basis of the average value calculated to high level integrating circuit 30 and low level integrating circuit 40 with sampling apparatus
Flat sampling, can substantially reduce sample frequency, save the memory space of plasma processing apparatus, improve corona treatment
The PROCESS FOR TREATMENT efficiency of device.
Specifically, in view of low and high level in RF source power pulse output signals same period and DC offset voltage
Low and high level contrast, therefore when RF source power is output as pulse signal, the pulse signal is triggered as the clock
The clock signal of switch, when the output pulse signal of the RF source power is rising edge, the clock trigger switch and rear end
Low level integrating circuit be connected, when the output signal is trailing edge, the high level of the clock trigger switch and rear end is accumulated
Parallel circuit is connected.
Because low and high level is electric with the height of DC offset voltage in RF bias power pulse output signals same period
It is flat identical, therefore the RF bias power, when being output as pulse signal, no matter whether the output of RF source power is defeated pulse
Go out, when the output pulse signal of the RF bias power is rising edge, the high level of the clock trigger switch and rear end
Integrating circuit is connected, when the output signal is trailing edge, the low level integrating circuit phase of the clock trigger switch and rear end
Even.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area skill
Art personnel without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore guarantor of the invention
The scope that shield scope should be defined by the claims in the present invention is defined.
Claims (8)
1. a kind of plasma processing apparatus, an including vacuum reaction chamber, the vacuum reaction chamber lower section sets one and supports substrate
Electrostatic chuck, electrostatic chuck lower section sets a pedestal, the pedestal simultaneously as the bottom electrode of the vacuum reaction chamber,
The bottom electrode connects radio frequency power source, and the radio frequency power source exports pulse power, it is characterised in that：The substrate top sets
DC offset voltage detection pin is put, the detection pin connects a clock trigger switch, the rear end point of the clock trigger switch
Lian Jie not high level integrating circuit and low level integrating circuit；
The radio-frequency power includes RF source power and RF bias power, and the RF source power or RF bias power are at least
One output pulse power；
The pulse frequency of the radio-frequency power is identical with the clock frequency of the clock trigger switch.
2. plasma processing apparatus according to claim 1, it is characterised in that：The RF source power is output as pulse
Signal, the pulse signal as the clock trigger switch clock signal, the output pulse signal of the radio-frequency power is
During rising edge, the clock trigger switch is connected with the low level integrating circuit of rear end, and the output pulse signal is trailing edge
When, the clock trigger switch is connected with the high level integrating circuit of rear end.
3. plasma processing apparatus according to claim 1, it is characterised in that：The RF bias power is output as arteries and veins
When rushing signal, the pulse signal as the clock trigger switch clock signal, the radio-frequency power output pulse letter
Number for rising edge when, the clock trigger switch is connected with the high level integrating circuit of rear end, under the output pulse signal is
Drop along when, the clock trigger switch is connected with the low level integrating circuit of rear end.
4. plasma processing apparatus according to claim 1, it is characterised in that：The RF source power and the radio frequency are inclined
When the output for putting power is pulse signal, the pulse signal as the clock trigger switch clock signal, it is described to penetrate
When the output pulse signal of frequency power is rising edge, the clock trigger switch is connected with the high level integrating circuit of rear end, institute
When stating output pulse signal for trailing edge, the clock trigger switch is connected with the low level integrating circuit of rear end.
5. plasma processing apparatus according to claim 1, it is characterised in that：The frequency range of the RF bias power
It is 400KHz to 13.56MHz, the frequency range of the RF source power is 27MHz to 120MHz.
6. plasma processing apparatus according to claim 1, it is characterised in that：The RF bias power and the radio frequency
The pulses range of source power is 50Hz to 10KHz, and duty cycle range is 10% to 90%.
7. a kind of substrate DC offset voltage measuring method, it is characterised in that：Comprise the following steps, by a detection direct current biasing electricity
The detection pin of pressure is placed on the substrate surface, and the detection pin rear end connects a clock trigger switch, and the clock triggering is opened
Close rear end and connect a high level integrating circuit and a low level integrating circuit respectively；Adjust the output pulse signal of radio-frequency power frequently
Rate；Using the output pulse signal frequency as the clock trigger switch regulating frequency, when the output of the radio-frequency power
Pulse signal be rising edge or trailing edge when, the clock trigger switch be connected respectively to the high level integrating circuit or
It is straight that low level integrating circuit, the high level integrating circuit or low level integrating circuit are detected to the detection pin respectively
The high level pulse and low level pulse for flowing bias voltage are integrated, and obtain average value of the DC offset voltage in high level
Average value during with low level, then signal acquisition is carried out to it respectively, realize the monitoring to substrate surface DC offset voltage.
8. substrate DC offset voltage measuring method according to claim 7, it is characterised in that：To the DC offset voltage
The sampling time interval of average value during average value and low level in high level is more than or equal to 0.1s.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310695325.1A CN104715988B (en) | 2013-12-17 | 2013-12-17 | Plasma processing device and DC bias voltage measuring method for substrate of plasma processing device |
| TW103142793A TWI553696B (en) | 2013-12-17 | 2014-12-09 | Plasma processing device and its substrate DC bias voltage measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310695325.1A CN104715988B (en) | 2013-12-17 | 2013-12-17 | Plasma processing device and DC bias voltage measuring method for substrate of plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104715988A CN104715988A (en) | 2015-06-17 |
| CN104715988B true CN104715988B (en) | 2017-05-24 |
Family
ID=53415207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310695325.1A Active CN104715988B (en) | 2013-12-17 | 2013-12-17 | Plasma processing device and DC bias voltage measuring method for substrate of plasma processing device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104715988B (en) |
| TW (1) | TWI553696B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107295739A (en) * | 2016-04-12 | 2017-10-24 | 北京北方华创微电子装备有限公司 | Produce the method and its plasma apparatus of pulsed plasma |
| WO2024032432A1 (en) * | 2022-08-08 | 2024-02-15 | 深圳市恒运昌真空技术有限公司 | Radio frequency power supply signal acquisition method and apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904947A (en) * | 1988-11-09 | 1990-02-27 | Tideland Signal Corporation | Method and circuit for measuring pulse width |
| TW520621B (en) * | 2001-01-22 | 2003-02-11 | Tokyo Electron Ltd | Vertically translatable chuck assembly and method for a plasma reactor system |
| CN101110347A (en) * | 2006-07-17 | 2008-01-23 | 应用材料公司 | Double offset frequency plasma body reactor with electrostatic chuck voltage feedback control |
| CN102680910A (en) * | 2012-05-15 | 2012-09-19 | 华为技术有限公司 | Supply current detection method and circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5835335A (en) * | 1997-03-26 | 1998-11-10 | Lam Research Corporation | Unbalanced bipolar electrostatic chuck power supplies and methods thereof |
| US6673636B2 (en) * | 2001-05-18 | 2004-01-06 | Applied Materails Inc. | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers |
| JP5315942B2 (en) * | 2008-05-21 | 2013-10-16 | 東京エレクトロン株式会社 | Mounting table mechanism, plasma processing apparatus using the same, and method of applying voltage to electrostatic chuck |
-
2013
- 2013-12-17 CN CN201310695325.1A patent/CN104715988B/en active Active
-
2014
- 2014-12-09 TW TW103142793A patent/TWI553696B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904947A (en) * | 1988-11-09 | 1990-02-27 | Tideland Signal Corporation | Method and circuit for measuring pulse width |
| TW520621B (en) * | 2001-01-22 | 2003-02-11 | Tokyo Electron Ltd | Vertically translatable chuck assembly and method for a plasma reactor system |
| CN101110347A (en) * | 2006-07-17 | 2008-01-23 | 应用材料公司 | Double offset frequency plasma body reactor with electrostatic chuck voltage feedback control |
| CN102680910A (en) * | 2012-05-15 | 2012-09-19 | 华为技术有限公司 | Supply current detection method and circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104715988A (en) | 2015-06-17 |
| TW201532111A (en) | 2015-08-16 |
| TWI553696B (en) | 2016-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8502689B2 (en) | System and method for voltage-based plasma excursion detection | |
| TWI342898B (en) | Sensor array for measuring plasma characteristics in plasma processing environments | |
| CN109417013B (en) | System and method for controlling voltage waveform at substrate during plasma processing | |
| US10229819B2 (en) | Plasma processing apparatus and probe apparatus | |
| CN102612738B (en) | For detecting method and the device of plasma confinement state in plasma process system | |
| US8587321B2 (en) | System and method for current-based plasma excursion detection | |
| SG178285A1 (en) | Method and apparatus for measuring wafer bias potential | |
| TW201537612A (en) | Plasma processing apparatus | |
| JP2023533499A (en) | Systems and methods for extracting process control information from a radio frequency delivery system of a plasma processing system | |
| US8366833B2 (en) | Plasma processing apparatus and plasma processing method | |
| KR20100067413A (en) | Non-contact plasma monitoring device, plasma processing apparatus and non-contact plasma monitoring system | |
| CN104715988B (en) | Plasma processing device and DC bias voltage measuring method for substrate of plasma processing device | |
| CN106298615B (en) | Electrostatic chuck, reaction chamber and semiconductor processing equipment | |
| KR20130020554A (en) | Control system of a touch panel and a control method thereof | |
| KR101685087B1 (en) | The noncontact plasma electric field detection device and the method for detection | |
| US9083392B2 (en) | Wireless sensing and communication utilizing RF transmissions from microdischarges | |
| CN109961998B (en) | Plasma processing device and control method based on thickness monitoring of focusing ring | |
| CN102820197B (en) | A kind of plasma handling system | |
| TW202127964A (en) | Plasma processing apparatus and plasma processing method | |
| US11488802B2 (en) | Semiconductor device for condition-controlled radio frequency system | |
| CN114520677A (en) | Radio frequency power control method and plasma processing device | |
| JPH0364897A (en) | Measuring method of plasma parameter | |
| JP3698823B2 (en) | Plasma potential measuring apparatus and measuring method thereof | |
| WO2022240651A1 (en) | Automatic electrostatic chuck bias compensation during plasma processing | |
| CN109243955A (en) | Plasma glow start state monitoring method and monitoring device and semiconductor processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |