CN101892522A - 利用氧等离子体辅助脉冲激光沉积法制备钛铌镁酸铅薄膜 - Google Patents
利用氧等离子体辅助脉冲激光沉积法制备钛铌镁酸铅薄膜 Download PDFInfo
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- CN101892522A CN101892522A CN 201010241301 CN201010241301A CN101892522A CN 101892522 A CN101892522 A CN 101892522A CN 201010241301 CN201010241301 CN 201010241301 CN 201010241301 A CN201010241301 A CN 201010241301A CN 101892522 A CN101892522 A CN 101892522A
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000001301 oxygen Substances 0.000 title claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004549 pulsed laser deposition Methods 0.000 title abstract description 6
- 210000002381 plasma Anatomy 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 67
- 239000010936 titanium Substances 0.000 claims description 60
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 56
- 229910052719 titanium Inorganic materials 0.000 claims description 56
- 238000002360 preparation method Methods 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 230000008676 import Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910018921 CoO 3 Inorganic materials 0.000 claims description 5
- 229910004121 SrRuO Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- -1 at first Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 claims description 2
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 238000007670 refining Methods 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- SXSVTGQIXJXKJR-UHFFFAOYSA-N [Mg].[Ti] Chemical compound [Mg].[Ti] SXSVTGQIXJXKJR-UHFFFAOYSA-N 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000012876 topography Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229930194542 Keto Natural products 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000000468 ketone group Chemical group 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001706 oxygenating effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910019606 La0.5Sr0.5CoO3 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN 201010241301 CN101892522B (zh) | 2010-07-30 | 2010-07-30 | 利用氧等离子体辅助脉冲激光沉积法制备钛铌镁酸铅薄膜 |
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CN 201010241301 CN101892522B (zh) | 2010-07-30 | 2010-07-30 | 利用氧等离子体辅助脉冲激光沉积法制备钛铌镁酸铅薄膜 |
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CN101892522A true CN101892522A (zh) | 2010-11-24 |
CN101892522B CN101892522B (zh) | 2013-07-17 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108441824A (zh) * | 2018-05-31 | 2018-08-24 | 南开大学 | 基于Pt衬底的外延取向铌酸锂薄膜及其生长方法 |
CN111423231A (zh) * | 2020-03-31 | 2020-07-17 | 上海师范大学 | 一种三元系弛豫铁电薄膜材料及其制备方法和应用 |
CN113215538A (zh) * | 2021-03-19 | 2021-08-06 | 上海师范大学 | 一种高居里点硅衬底铁电薄膜材料及其制备与应用 |
CN114059022A (zh) * | 2021-11-09 | 2022-02-18 | 西安交通大学 | 一种设置空心阴极等离子体的pld系统及薄膜的制备方法 |
WO2022151472A1 (en) * | 2021-01-18 | 2022-07-21 | Applied Materials, Inc. | Deposition of piezoelectric films |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0841671A2 (en) * | 1996-11-09 | 1998-05-13 | Oxley Developments Company Limited | Electronic components incorporating capacitors |
CN101139700A (zh) * | 2007-10-24 | 2008-03-12 | 中国科学院上海硅酸盐研究所 | 氧等离子体辅助脉冲激光沉积法制备二氧化硅薄膜的方法 |
-
2010
- 2010-07-30 CN CN 201010241301 patent/CN101892522B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0841671A2 (en) * | 1996-11-09 | 1998-05-13 | Oxley Developments Company Limited | Electronic components incorporating capacitors |
CN101139700A (zh) * | 2007-10-24 | 2008-03-12 | 中国科学院上海硅酸盐研究所 | 氧等离子体辅助脉冲激光沉积法制备二氧化硅薄膜的方法 |
Non-Patent Citations (1)
Title |
---|
《中国优秀硕士学位论文全文数据库 工程科技I辑》 20071231 刘忠明 新型PMN-PT透明电光陶瓷及其薄膜研究 第19,33-38页 , 第5期 2 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108441824A (zh) * | 2018-05-31 | 2018-08-24 | 南开大学 | 基于Pt衬底的外延取向铌酸锂薄膜及其生长方法 |
CN111423231A (zh) * | 2020-03-31 | 2020-07-17 | 上海师范大学 | 一种三元系弛豫铁电薄膜材料及其制备方法和应用 |
WO2022151472A1 (en) * | 2021-01-18 | 2022-07-21 | Applied Materials, Inc. | Deposition of piezoelectric films |
CN113215538A (zh) * | 2021-03-19 | 2021-08-06 | 上海师范大学 | 一种高居里点硅衬底铁电薄膜材料及其制备与应用 |
CN114059022A (zh) * | 2021-11-09 | 2022-02-18 | 西安交通大学 | 一种设置空心阴极等离子体的pld系统及薄膜的制备方法 |
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CN101892522B (zh) | 2013-07-17 |
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Effective date of registration: 20161228 Address after: 215499 Changchun South Road, Jiangsu, No. 238, No. Patentee after: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES Address before: 200050 Dingxi Road, Shanghai, Changning District, No. 1295 Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
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Address after: 215400 No.6 Liangfu Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Jiangsu Institute of advanced inorganic materials Address before: No. 238 Changchun South Road, Taicang City, Jiangsu Province, 215499 Patentee before: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES |
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