CN101868852B - 感光性胶粘剂、半导体装置及半导体装置的制造方法 - Google Patents

感光性胶粘剂、半导体装置及半导体装置的制造方法 Download PDF

Info

Publication number
CN101868852B
CN101868852B CN2008801171626A CN200880117162A CN101868852B CN 101868852 B CN101868852 B CN 101868852B CN 2008801171626 A CN2008801171626 A CN 2008801171626A CN 200880117162 A CN200880117162 A CN 200880117162A CN 101868852 B CN101868852 B CN 101868852B
Authority
CN
China
Prior art keywords
semiconductor device
photosensitive adhesive
manufacturing approach
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008801171626A
Other languages
English (en)
Other versions
CN101868852A (zh
Inventor
增子崇
川守崇司
满仓一行
加藤木茂树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN101868852A publication Critical patent/CN101868852A/zh
Application granted granted Critical
Publication of CN101868852B publication Critical patent/CN101868852B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/81—Unsaturated isocyanates or isothiocyanates
    • C08G18/8108—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group
    • C08G18/8116—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group esters of acrylic or alkylacrylic acid having only one isocyanate or isothiocyanate group
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • C09J175/16—Polyurethanes having carbon-to-carbon unsaturated bonds having terminal carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29076—Plural core members being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83194—Lateral distribution of the layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Materials For Photolithography (AREA)

Abstract

一种半导体装置(1)的制造方法，其具备：在具有连接端子的基板(3)上设置感光性胶粘剂(绝缘树脂层(7))的第一工序；通过曝光及显影使感光性胶粘剂形成图案，以形成连接端子露出的开口(13)的第二工序；向开口(13)填充导电材料来形成导电层(9)的第三工序；将具有连接用电极部的半导体芯片(5)直接胶粘于感光性胶粘剂，并且通过导电层(9)将基板(3)的连接端子与半导体芯片(5)的连接用电极部电连接的第四工序。

Description

感光性胶粘剂、半导体装置及半导体装置的制造方法
技术领域
本发明涉及感光性胶粘剂、半导体装置及半导体装置的制造方法。
背景技术
在半导体安装领域中，基板与半导体芯片借助多个导电性凸块被连接的倒装片安装方式受到关注。倒装片安装方式中，因基于基板与半导体芯片的热膨胀系数差的应力，有时产生借助导电性凸块的基板与半导体芯片的连接异常。因此，已知为了缓和该应力而在基板与半导体芯片之间填充树脂来密封导电性凸块的方式(例如，专利文献1)。
专利文献1记载的半导体装置的制造方法中，在彼此对置的基板与半导体芯片之间配置多个导电性凸块与包括具有电绝缘性的树脂的树脂片。然后，通过加热及加压使树脂片熔融，在基板与半导体芯片之间利用树脂密封多个凸块。
专利文献1：专利第3999840号公报
发明内容
但是，在现有的倒装片安装方式中，有时树脂进入基板上的连接端子与导电性凸块之间或半导体芯片与导电性凸块之间。因此，借助导电性凸块的基板与半导体芯片的导通被抑制，有连接可靠性降低的问题。
为此，本发明的目的在于抑制借助导电性凸块的连接端子间的连接可靠性降低。
本发明的半导体装置的制造方法具备：第一工序，其在具有第一连接部的第一粘附体上设置感光性胶粘剂；第二工序，其通过曝光及显影使感光性胶粘剂形成图案，以形成第一连接部露出的开口；第三工序，其向开口填充导电材料来形成导电层；第四工序，其将具有第二连接部的第二粘附体直接胶粘于感光性胶粘剂，并且借助导电层将第一连接部与第二连接部进行电连接。
上述本发明的半导体装置的制造方法中，使用形成被图案化的绝缘树脂层的具有作为感光性树脂的功能的感光性胶粘剂，形成第一连接部露出的开口，在该开口填充导电材料。由此，由于在树脂不进入第一粘附体与导电层之间的状态下形成包括感光性胶粘剂的绝缘树脂层，所以能确保第一粘附体与导电层的导通，并抑制第一粘附体与导电层的连接可靠性降低。
另外，本发明的半导体装置的制造方法中，第一粘附体或第二粘附体的一方是包含多个半导体芯片的半导体晶片，另一方是基板，可以在第三工序与第四工序之间或第四工序之后还具备将半导体晶片按半导体芯片进行切割的工序。
本发明的半导体装置的制造方法中，使用在被图案化之后对第二粘附体具有胶粘性的感光性胶粘剂。因此，从可以特别容易地对图案化之后的感光性胶粘剂赋予相对第二粘附体的胶粘性来看，优选感光性胶粘剂含有碱可溶性聚合物、辐射聚合性化合物和光聚合引发剂。从同样的观点来看，碱可溶性聚合物较优选具有羧基或酚性羟基。
碱可溶性聚合物的玻璃化转变温度优选为150℃以下。由此，能在较低的温度下向第二粘附体贴附感光性胶粘剂。
碱可溶性聚合物优选为聚酰亚胺。聚酰亚胺优选为使四羧酸二酐与二胺反应得到的聚酰亚胺，所述二胺至少包括一种下述化学式(I-a)、(I-b)、(II-a)、(II-b)及(II-c)分别所示的芳香族二胺。
【化1】
Figure GPA00001139555900031
本发明的半导体装置的制造方法中，优选感光性胶粘剂还含有热固性树脂。
本发明的半导体装置的制造方法中，感光性胶粘剂可以为膜状。
本发明的半导体装置可以通过上述半导体装置的制造方法得到。
根据本发明，能抑制借助导电性凸块的连接端子间的连接可靠性降低。另外，根据本发明，由于无需填充树脂来形成绝缘树脂层，所以能抑制填充树脂时产生的空气卷入所导致的空隙的发生。
附图说明
图1是表示半导体装置的一个实施方式的剖面图。
图2是表示半导体装置的制造方法的一个实施方式的剖面图。
图3是表示半导体装置的制造方法的一个实施方式的剖面图。
图4是表示半导体装置的制造方法的一个实施方式的剖面图。
图5是表示半导体装置的制造方法的一个实施方式的剖面图。
图6是表示半导体装置的制造方法的一个实施方式的剖面图。
图7是表示半导体装置的制造方法的其他实施方式的剖面图。
图中：1-半导体装置，3-基板(第一粘附体)，5-半导体芯片(第二粘附体)，7-绝缘树脂层，9-导电层，11-电路面，13-开口，17-半导体晶片。
具体实施方式
以下，详细说明本发明的优选实施方式。但是，本发明并不限定于以下实施方式。
图1是表示半导体装置的一个实施方式的剖面图。半导体装置1具有：具有连接端子(第一连接部：未图示)的基板(第一粘附体)3、具有连接用电极部(第二连接部：未图示)的半导体芯片(第二粘附体)5、包括感光性胶粘剂的绝缘树脂层7和包括导电材料的导电层9。基板3具有与半导体芯片5对置的电路面11，并且与半导体芯片5隔着规定间隔配置。在基板3与半导体芯片5之间，绝缘树脂层7与基板3及半导体芯片5分别连接并形成，并且具有规定的图案。导电层9形成于基板3与半导体芯片5之间的未配置有绝缘树脂层7的部分。半导体芯片5的连接用电极部借助导电层9与基板3的连接端子进行电连接。
图2～图6是表示半导体装置的制造方法的一个实施方式的剖面图。本实施方式的半导体装置的制造方法具备：在具有连接端子的基板3上设置包括感光性胶粘剂的绝缘树脂层7的工序(第一工序：图2及图3)；通过曝光及显影使绝缘树脂层7形成图案，以形成连接端子露出的开口13的工序(第二工序：图4及图5)；向开口13填充导电材料来形成导电层9的工序(第三工序：图6)；将具有连接用电极部的半导体芯片5直接胶粘于基板3与绝缘树脂层7的层叠体的绝缘树脂层7，并且将基板3的连接端子与半导体芯片5的连接用电极部借助导电层9电连接的工序(第四工序)。
在图2所示的基板3的电路面11上设置包括感光性胶粘剂的绝缘树脂层7(图3)。简便的方法是预先准备形成为膜状的感光性胶粘剂(以下根据情况称为“胶粘膜”。)，并将其贴附于基板3。需要说明的是，可以通过下述方法来设置感光性胶粘剂，即使用旋涂法等将含有感光性胶粘剂的液状清漆涂布于基板2，加热干燥的方法。
感光性胶粘剂是通过曝光及显影而被图案化之后具有相对粘附体的胶粘性，并能进行碱显影的负型感光性胶粘剂。更详细而言，通过曝光及显影使感光性胶粘剂图案化所形成的抗蚀剂图案具有相对半导体芯片及基板等粘附体的胶粘性。例如，通过根据需要将粘附体边加热边压接于抗蚀剂图案，可以胶粘抗蚀剂图案与粘附体。下面说明具有上述功能的感光性胶粘剂的详细情况。
对于设置在基板3上的绝缘树脂层7，借助在规定的位置形成有开口的掩模15照射活性光线(典型的是紫外线)(图4)。由此，绝缘树脂层7以规定的图案被曝光。
曝光后，利用使用了碱显影液的显影除去绝缘树脂层7中未曝光的部分，由此绝缘树脂层7被图案化，以形成基板3的连接端子露出的开口13(图5)。需要说明的是，也能用正型感光性胶粘剂来代替负型感光性胶粘剂，此时通过显影除去绝缘树脂层7中被曝光的部分。
向所得的抗蚀剂图案的开口13填充导电材料来形成导电层9(图6)。导电材料的填充方法可以采用凹版印刷、利用辊的挤压、减压填充等各种方法。此处使用的导电材料除可以举出包括焊锡、金、银、镍、铜、铂、钯或氧化钌等金属或金属氧化物等的电极材料、上述金属的凸块之外，还可以举出例如至少含有导电性粒子和树脂成分的材料。作为上述导电性粒子，例如可以使用金、银、镍、铜、铂、钯或氧化钌等金属或金属氧化物、或有机金属化合物等导电性粒子。另外，作为树脂成分，例如可以使用环氧树脂及其固化剂等上述固化性树脂组合物。
半导体芯片5直接胶粘于基板3上的绝缘树脂层7。半导体芯片5的连接用电极部借助导电层9与基板3的连接端子电连接。需要说明的是，可以在半导体芯片5的与绝缘树脂层7相反侧的电路面上形成图案化的绝缘树脂层(缓冲涂布膜)。
例如通过边加热至感光性胶粘剂呈现流动性的温度边热压接的方法来进行半导体芯片5的胶粘。热压接后，根据需要加热绝缘树脂层7而使其进一步固化。
优选在半导体芯片5的与绝缘树脂层7相反侧的电路面(背面)贴附背面保护膜。
由以上所述，得到具有图1所示结构的半导体装置1。半导体装置的制造方法不限定于以上说明的实施方式，可以在不脱离本发明主旨的条件下进行适当变更。
例如，感光性胶粘剂并不限定于最初设置在基板3上的感光性胶粘剂，也可以最初设置于半导体芯片5上。此时，半导体装置的制造方法例如具有：在具有连接用电极部的半导体芯片5上设置包括感光性胶粘剂的绝缘树脂层7的第一工序；通过曝光及显影使绝缘树脂层7图案化，以形成连接用电极部露出的开口13的第二工序；向开口13填充导电材料来形成导电层9的第三工序；将具有连接端子的基板3直接胶粘于半导体芯片5与绝缘树脂层7的层叠体的绝缘树脂层7，并且借助导电层9将基板3的连接端子与半导体芯片5的连接用电极部电连接的第四工序。
上述制造方法中，由于在分别被切割的基板3与半导体芯片5之间进行连接，所以在基板3上的连接端子与半导体芯片5上的连接用电极部的连接容易，因此优选。
另外，感光性胶粘剂也可以最初设置在包含多个半导体芯片5的半导体晶片上。此时，半导体装置的制造方法例如具备：在具有连接用电极部的包含多个半导体芯片5的半导体晶片17上设置包括感光性胶粘剂的绝缘树脂层7的第一工序(图7)；通过曝光及显影使绝缘树脂层7图案化，以形成连接用电极部露出的开口13的第二工序；向开口13填充导电材料来形成导电层9的第三工序；将具有连接端子的晶片尺寸的基板(具有与半导体晶片相同程度大小的基板)3直接胶粘于半导体晶片17与绝缘树脂层7的层叠体的绝缘树脂层7，并且将基板3的连接端子与构成半导体晶片17的半导体芯片5的连接用电极部借助导电层9电连接的第四工序；将半导体晶片17与绝缘树脂层7与基板3的层叠体按半导体芯片5进行切割(dicing)的第五工序。
另外，上述制造方法可以如下所述：在第一工序中，在晶片尺寸的基板3上设置包括感光性胶粘剂的绝缘树脂层7，在第四工序中，将半导体晶片17直接胶粘于基板3与绝缘树脂层7的层叠体的绝缘树脂层7，并且借助导电层9将基板3的连接端子与构成半导体晶片17的半导体芯片5的连接用电极部电连接，在第五工序中，将半导体晶片17与绝缘树脂层7与基板3的层叠体按半导体芯片5进行切割。
上述制造方法中，由于能够以晶片尺寸进行直至半导体晶片17与基板3的连接为止的工序(第四工序)，所以在操作效率方面优选。需要说明的是，优选在半导体晶片17的与绝缘树脂层7相反侧的电路面(背面)贴附背面保护膜。
另外，其他半导体装置的制造方法具备：在具有连接用电极部的包含多个半导体芯片5的半导体晶片17上设置包括感光性胶粘剂的绝缘树脂层7的第一工序；通过曝光及显影使绝缘树脂层7图案化，以形成连接用电极部露出的开口13的第二工序；向开口13填充导电材料来形成导电层9的第三工序；将半导体晶片17与绝缘树脂层7的层叠体按半导体芯片5进行切割(dicing)的第四工序；将具有连接端子的基板3直接胶粘于被切割的半导体芯片5与绝缘树脂层7的层叠体的绝缘树脂层7，并且借助导电层9将基板3的连接端子与半导体芯片5的连接用电极部电连接的第五工序。
另外，上述制造方法可以如下所述：在第一工序中，在晶片尺寸的基板3上设置包括感光性胶粘剂的绝缘树脂层7，在第四工序中，将晶片尺寸的基板3与绝缘树脂层7的层叠体按半导体芯片5进行切割，在第五工序中，将半导体芯片5直接胶粘于被切割的基板3与绝缘树脂层7的层叠体的绝缘树脂层7，并且借助导电层9将基板3的连接端子与半导体芯片5的连接用电极部电连接。
上述制造方法中，能够以晶片尺寸进行感光性胶粘剂的形成至导电材料的填充工序(第三工序)，并且可以顺利进行切割工序(第四工序)，在这方面是优选的。
另外，使用感光性胶粘剂将半导体晶片彼此或半导体芯片彼此胶粘，由此可以构成半导体层叠体。在该层叠体中也能形成贯通电极。
此时，半导体装置的制造方法例如具备：在具有贯通电极的连接用电极部的第1半导体芯片5上设置包括感光性胶粘剂的绝缘树脂层7的第一工序；通过曝光及显影使绝缘树脂层7图案化，以形成上述连接用电极部露出的开口13的第二工序；向开口13填充导电材料来形成贯通电极连接的第三工序；将具有连接用电极部的第2半导体芯片5直接胶粘于第1半导体芯片5与绝缘树脂层7的层叠体的绝缘树脂层7，并且借助导电层9将第1及第2半导体芯片5的连接用电极部彼此电连接的第四工序。上述制造方法中，可以用半导体晶片代替半导体芯片。
以下，说明在上述实施方式的半导体装置的制造方法中使用的感光性胶粘剂的优选实施方式。
本实施方式的感光性胶粘剂含有碱可溶性聚合物、辐射聚合性化合物和光聚合引发剂。
碱可溶性聚合物只要可溶于碱显影液即可，优选可溶于四甲基氢氧化铵水溶液。例如，如果是具有羧基和/或酚性羟基的聚合物，则多数情况下在碱显影液中具有良好的溶解性。
为了确保曝光后良好的胶粘性，碱可溶性聚合物的玻璃化转变温度(Tg)优选为10～150℃。碱可溶性聚合物的Tg小于10℃时，有曝光后热压接时容易产生空隙的倾向。Tg超过150℃时，曝光前的向粘附体贴附的温度及曝光后的压接温度升高，有容易向周边构件赋予因热破坏或热应力等导致的变形的倾向。需要说明的是，上述Tg是使用粘弹性测定装置(Rheometric公司制)测定膜状感光性胶粘剂的粘弹性的温度变化时的tanδ的峰温度。
碱可溶性聚合物的重均分子量优选为5000～150000，较优选为10000～100000，更优选为10000～50000。碱可溶性聚合物的重均分子量小于5000时，有感光性胶粘剂的膜形成性降低的倾向，超过150000时，在碱显影液中的溶解性降低，有显影时间延长的倾向。通过将碱可溶性聚合物的重均分子量设定为5000～150000，也能得到可以确保用于曝光后再胶粘的良好的加热流动性的效果。需要说明的是，上述重均分子量是使用高效液相色谱(例如岛津制作所制“C-R4A”(商品名))测定的标准聚苯乙烯换算值。
碱可溶性聚合物可以具有烯键性不饱和基等辐射聚合性官能团。此时，碱可溶性聚合物也作为辐射聚合性化合物发挥作用。作为辐射聚合性化合物，可以仅使用具有辐射聚合性官能团的碱可溶性聚合物，也可以组合上述碱可溶性聚合物和与其不同的辐射聚合性化合物使用。
碱可溶性聚合物优选含有从聚酰亚胺、聚酰胺酰亚胺、聚酰胺、聚苯并噁唑、丙烯酸聚合物、苯乙烯-马来酸共聚物、乙烯基化合物-马来酰亚胺化合物共聚物、酚醛清漆树脂及聚降冰片烯树脂中选择的至少1种聚合物。上述聚合物中，优选聚酰亚胺、聚酰胺酰亚胺、聚酰胺、聚苯并噁唑及丙烯酸聚合物。
用作碱可溶性聚合物的聚酰亚胺由主链中具有亚胺骨架的1种或2种以上聚合物形成。聚酰亚胺优选具有羧基和/或酚性羟基。
具有羧基的聚酰亚胺可以通过偏苯三酸酐和/或四羧酸二酐与具有羧基及氨基的二胺的反应而得到。具有酚性羟基的聚酰亚胺可以通过四羧酸二酐与具有酚性羟基及氨基的二胺的反应而得到。通过上述反应，在聚酰亚胺中导入来自二胺的羧基或酚性羟基。通过适当调整二胺的种类及其投料比、反应条件等，可以将聚酰亚胺的酸值控制在所希望的范围。
像本领域技术人员理解得那样，四羧酸二酐与二胺的反应(缩合反应)通过公知的方法来进行。例如，在该反应中，首先在有机溶剂中使四羧酸二酐与二胺以等摩尔或大致等摩尔的比率、在反应温度80℃以下、优选0～60℃下发生加成反应。各成分的添加顺序任意。随着反应进行，反应液的粘度慢慢上升，生成作为聚酰亚胺前体的聚酰胺酸。将生成的聚酰胺酸加热到50～80℃的温度并使其解聚，由此也可以调整其分子量。通过使生成的聚酰胺酸脱水闭环来生成聚酰亚胺。脱水闭环可以通过利用加热的热闭环法、或使用脱水剂的化学闭环法来进行。
关于四羧酸二酐与二胺的投料比，较具体地说，相对于四羧酸二酐的总量1.0mol，优选二胺的总量在0.5～2.0mol、较优选在0.8～1.0mol的范围内。二胺的比率超过2.0mol时，有大量生成末端为氨基的聚酰亚胺寡聚物的倾向，低于0.5mol时，有大量生成末端为羧酸或酸酐的聚酰亚胺寡聚物的倾向。聚酰亚胺寡聚物的量增多时，聚酰亚胺的重均分子量降低，容易发生感光性胶粘剂组合物的耐热性等各种特性降低。通过调整上述投料比，可以将聚酰亚胺的重均分子量调整至5000～150000的范围内。
作为用于合成聚酰亚胺的二胺，为了使其在碱显影液中的溶解性特别良好，优选上述式(I-a)、(I-b)、(II-a)、(II-b)及(II-c)分别所示的芳香族二胺的至少1种。
为了使聚酰亚胺的Tg下降来减小热应力，二胺优选进一步包括下述通式(III)表示的脂肪族醚二胺。式(III)中，Q1、Q2及Q3分别独立地表示碳原子数为1～10的亚烷基，n1表示1～80的整数。
【化2】
Figure GPA00001139555900101
作为式(III)的脂肪族醚二胺，更具体地可以举出下述化学式(IIIa)、(IIIb)或(IIIc)表示的脂肪族醚二胺。上述脂肪族醚二胺中，基于提高曝光前的在低温下的贴附性及曝光后的再胶粘性的观点，优选式(IIIa)的脂肪族醚二胺。
【化3】
Figure GPA00001139555900102
作为脂肪族醚二胺的市售品，例如可以举出三太诺化学(サンテクノケミカル)(株)制的纪发民(ジェフア一ミン)“D-230”、“D-400”、“D-2000”、“D-4000”、“ED-600”、“ED-900”、“ED-2001”、“EDR-148”(以上为商品名)、BASF(制)的聚醚胺“D-230”、“D-400”、“D-2000”(以上为商品名)。
进而，为了确保曝光后的对于粘附体的良好胶粘性，优选使用下述通式(IV)表示的硅氧烷二胺。式(IV)中，R1及R2分别独立地表示碳原子数为1～5的亚烷基或可以具有取代基的亚苯基，R3、R4、R5及R6分别独立地表示碳原子数为1～5的烷基、苯基或苯氧基，n2表示1～5的整数。
【化4】
Figure GPA00001139555900103
作为化学式(IV)表示的硅氧烷二胺，例如，式中的n2为1时，可以举出1，1，3，3-四甲基-1，3-双(4-氨基苯基)二硅氧烷、1，1，3，3-四苯氧基-1，3-双(4-氨基乙基)二硅氧烷、1，1，3，3-四苯基-1，3-双(2-氨基乙基)二硅氧烷、1，1，3，3-四苯基-1，3-双(3-氨基丙基)二硅氧烷、1，1，3，3-四甲基-1，3-双(2-氨基乙基)二硅氧烷、1，1，3，3-四甲基-1，3-双(3-氨基丙基)二硅氧烷、1，1，3，3-四甲基-1，3-双(3-氨基丁基)二硅氧烷、1，3-二甲基-1，3-二甲氧基-1，3-双(4-氨基丁基)二硅氧烷。n2为2时，可以举出1，1，3，3，5，5-六甲基-1，5-双(4-氨基苯基)三硅氧烷、1，1，5，5-四苯基-3，3-二甲基-1，5-双(3-氨基丙基)三硅氧烷、1，1，5，5-四苯基-3，3-二甲氧基-1，5-双(4-氨基丁基)三硅氧烷、1，1，5，5-四苯基-3，3-二甲氧基-1，5-双(5-氨基戊基)三硅氧烷、1，1，5，5-四甲基-3，3-二甲氧基-1，5-双(2-氨基乙基)三硅氧烷、1，1，5，5-四甲基-3，3-二甲氧基-1，5-双(4-氨基丁基)三硅氧烷、1，1，5，5-四甲基-3，3-二甲氧基-1，5-双(5-氨基戊基)三硅氧烷、1，1，3，3，5，5-六甲基-1，5-双(3-氨基丙基)三硅氧烷、1，1，3，3，5，5-六乙基-1，5-双(3-氨基丙基)三硅氧烷、1，1，3，3，5，5-六丙基-1，5-双(3-氨基丙基)三硅氧烷。
上述二胺可以单独或组合2种以上使用。例如，优选式(Ia)、(Ib)、(II-a)、(II-b)及(II-c)分别所示的芳香族二胺的至少1种为全部二胺的10～50摩尔％，通式(IV)表示的硅氧烷二胺为全部二胺的1～20摩尔％(更优选为5～10摩尔％)，通式(III)表示的脂肪族醚二胺为全部二胺的10～90摩尔％。通过以上述比率使用式(Ia)或(Ib)表示的芳香族二胺，可以确保良好的显影性。硅氧烷二胺小于全部二胺的1摩尔％时，有对曝光后的粘附体的胶粘性降低的倾向，超过20摩尔％时，有在碱显影液中的溶解性降低的倾向。另外，脂肪族醚二胺小于全部二胺的10摩尔％时，聚酰亚胺的Tg升高，有低温加工性(低温下的贴附性)降低的倾向，超过90摩尔％时，曝光后热压接时有容易发生因过流动导致的空隙的倾向。
二胺还可以包括上述以外的二胺。例如，可以举出邻苯二胺、间苯二胺、对苯二胺、3，3’-二氨基二苯基醚、3，4’-二氨基二苯基醚、4，4’-二氨基二苯基醚、3，3’-二氨基二苯基甲烷、3，4’-二氨基二苯基甲烷、4，4’-二氨基二苯基醚甲烷、双(4-氨基-3，5-二甲基苯基)甲烷、双(4-氨基-3，5-二异丙基苯基)甲烷、3，3’-二氨基二苯基二氟甲烷、3，4’-二氨基二苯基二氟甲烷、4，4’-二氨基二苯基二氟甲烷、3，3’-二氨基二苯砜、3，4’-二氨基二苯砜、4，4’-二氨基二苯砜、3，3’-二氨基二苯基硫化物、3，4’-二氨基二苯基硫化物、4，4’-二氨基二苯基硫化物、3，3’-二氨基二苯基酮、3，4’-二氨基二苯基酮、4，4’-二氨基二苯基酮、2，2-双(3-氨基苯基)丙烷、2，2’-(3，4’-二氨基二苯基)丙烷、2，2-双(4-氨基苯基)丙烷、2，2-双(3-氨基苯基)六氟丙烷、2，2-(3，4’-二氨基二苯基)六氟丙烷、2，2-双(4-氨基苯基)六氟丙烷、1，3-双(3-氨基苯氧基)苯、1，4-双(3-氨基苯氧基)苯、1，4-双(4-氨基苯氧基)苯、3，3’-(1，4-亚苯基双(1-甲基亚乙基))双苯胺、3，4’-(1，4-亚苯基双(1-甲基亚乙基))双苯胺、4，4’-(1，4-亚苯基双(1-甲基亚乙基))双苯胺、2，2-双(4-(3-氨基苯氧基)苯基)丙烷、2，2-双(4-(3-氨基苯氧基)苯基)六氟丙烷、2，2-双(4-(4-氨基苯氧基)苯基)六氟丙烷、双(4-(3-氨基苯氧基)苯基)硫化物、双(4-(4-氨基苯氧基)苯基)硫化物、双(4-(3-氨基苯氧基)苯基)砜、双(4-(4-氨基苯氧基)苯基)砜、1，3-双(氨基甲基)环己烷及2，2-双(4-氨基苯氧基苯基)丙烷。
用作合成聚酰亚胺时的原料的四羧酸二酐由于抑制胶粘剂的诸特性降低，所以优选利用由乙酸酐的重结晶来精制。或者，四羧酸二酐可以通过在比其熔点低10～20℃的温度下加热12小时以上来干燥。可以通过差示扫描量热仪(DSC)测定的吸热开始温度与吸热峰温度之差来评价四羧酸二酐的纯度，优选将通过重结晶或干燥等将该差控制在20℃以内、较优选为10℃以内而精制得到的四羧酸二酐用于合成聚酰亚胺。吸热开始温度与吸热峰温度使用DSC(珀金埃尔默公司制DSC-7型)，在试样量：5mg、升温速度：5℃/min、测定气氛：氮的条件下测定。
作为四羧酸二酐，例如可以举出苯均四酸二酐、3，3’，4，4’-联苯基四羧酸二酐、2，2’，3，3’-联苯基四羧酸二酐、2，2-双(3，4-二羧基苯基)丙烷二酐、2，2-双(2，3-二羧基苯基)丙烷二酐、1，1-双(2，3-二羧基苯基)乙烷二酐、1，1-双(3，4-二羧基苯基)乙烷二酐、双(2，3-二羧基苯基)甲烷二酐、双(3，4-二羧基苯基)甲烷二酐、双(3，4-二羧基苯基)砜二酐、3，4，9，10-苝四羧酸二酐、双(3，4-二羧基苯基)醚二酐、苯-1，2，3，4-四羧酸二酐、3，4，3’，4’-二苯甲酮四羧酸二酐、2，3，2’，3’-二苯甲酮四羧酸二酐、3，3，3’，4’-二苯甲酮四羧酸二酐、1，2，5，6-萘四羧酸二酐、1，4，5，8-萘四羧酸二酐、2，3，6，7-萘四羧酸二酐、1，2，4，5-萘四羧酸二酐、2，6-二氯萘-1，4，5，8-四羧酸二酐、2，7-二氯萘-1，4，5，8-四羧酸二酐、2，3，6，7-四氯萘-1，4，5，8-四羧酸二酐、菲-1，8，9，10-四羧酸二酐、吡嗪-2，3，5，6-四羧酸二酐、噻吩-2，3，5，6-四羧酸二酐、2，3，3’，4’-联苯基四羧酸二酐、3，4，3’，4’-联苯基四羧酸二酐、2，3，2’，3’-联苯基四羧酸二酐、双(3，4-二羧基苯基)二甲基硅烷二酐、双(3，4-二羧基苯基)甲基苯基硅烷二酐、双(3，4-二羧基苯基)二苯基硅烷二酐、1，4-双(3，4-二羧基苯基二甲基甲硅烷基)苯二酐、1，3-双(3，4-二羧基苯基)-1，1，3，3-四甲基二环己烷二酐、对亚苯基双(偏苯三酸酐)、亚乙基四羧酸二酐、1，2，3，4-丁四甲酸二酐、十氢萘-1，4，5，8-四羧酸二酐、4，8-二甲基-1，2，3，5，6，7-六氢萘-1，2，5，6-四羧酸二酐、环戊烷-1，2，3，4-四羧酸二酐、吡咯烷-2，3，4，5-四羧酸二酐、1，2，3，4-环丁烷四羧酸二酐、双(外-双环[2，2，1]庚烷-2，3-二羧酸二酐、双环-[2，2，2]-辛-7-烯-2，3，5，6-四羧酸二酐、2，2-双(3，4-二羧基苯基)丙烷二酐、2，2-双[4-(3，4-二羧基苯基)苯基]丙烷二酐、2，2-双(3，4-二羧基苯基)六氟丙烷二酐、2，2-双[4-(3，4-二羧基苯基)苯基]六氟丙烷二酐、4，4’-双(3，4-二羧基苯氧基)二苯基硫二酐、1，4-双(2-羟基六氟异丙基)苯双(偏苯三酸酐)、1，3-双(2-羟基六氟异丙基)苯双(偏苯三酸酐)、5-(2，5-二氧杂四氢呋喃基)-3-甲基-3-环己烯-1，2-二羧酸二酐及四氢呋喃-2，3，4，5-四羧酸二酐。
特别是为了赋予在溶剂中的良好的溶解性，优选下述化学式(V)或(VI)表示的四羧酸二酐。此时，优选将上述式表示的四羧酸二酐的比例设定为相对于全部四羧酸二酐100摩尔％为50摩尔％以上。该比例小于50摩尔％时，有溶解性提高效果降低的倾向。
【化5】
Figure GPA00001139555900141
上述四羧酸二酐可以单独或组合二种以上使用。另外，为了调整对于碱显影液的溶解性及分子量等，可以根据需要并用偏苯三酸酐等单官能酸酐。
辐射聚合性化合物是利用紫外线或电子束等放射线的照射而聚合的化合物。辐射聚合性化合物优选为具有丙烯酰基及甲基丙烯酰基之类的烯键性不饱和基的化合物。作为辐射聚合性化合物的具体例，可以举出丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯酸2-乙基己酯、甲基丙烯酸2-乙基己酯、丙烯酸戊烯基酯、丙烯酸四氢糠基酯、甲基丙烯酸四氢糠基酯、二甘醇二丙烯酸酯、三甘醇二丙烯酸酯、四甘醇二丙烯酸酯、二甘醇二甲基丙烯酸酯、三甘醇二甲基丙烯酸酯、四甘醇二甲基丙烯酸酯、三羟甲基丙烷二丙烯酸酯、三羟甲基丙烷三丙烯酸酯、三羟甲基丙烷二甲基丙烯酸酯、三羟甲基丙烷三甲基丙烯酸酯、1，4-丁二醇二丙烯酸酯、1，6-己二醇二丙烯酸酯、1，4-丁二醇二甲基丙烯酸酯、1，6-己二醇二甲基丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、苯乙烯、二乙烯基苯、4-乙烯基甲苯、4-乙烯基吡啶、N-乙烯基吡咯烷酮、丙烯酸2-羟基乙酯、甲基丙烯酸2-羟基乙酯、1，3-丙烯酰氧基-2-羟基丙烷、1，2-甲基丙烯酰氧基-2-羟基丙烷、亚甲基双丙烯酰胺、N，N-二甲基丙烯酰胺、N-羟甲基丙烯酰胺、三(β-羟基乙基)异氰脲酸酯的三丙烯酸酯、下述通式(10)表示的化合物、尿烷丙烯酸酯或尿烷甲基丙烯酸酯及脲丙烯酸酯。式(10)中，R3及R4分别独立地表示氢原子或甲基，q及r分别独立地表示1以上的整数。
【化6】
Figure GPA00001139555900151
尿烷丙烯酸酯及尿烷甲基丙烯酸酯例如通过二醇类、下述通式(21)表示的异氰酸酯化合物及下述通式(22)表示的化合物的反应生成。
【化7】
Figure GPA00001139555900152
式(21)中，s表示0或1，R5表示碳原子数为1～30的2价或3价有机基。式(22)中，R6表示氢原子或甲基，R7表示亚乙基或亚丙基。
脲甲基丙烯酸酯例如由下述通式(31)表示的二胺与下述通式(32)表示的化合物的反应而生成。
【化8】
H2N-R8-NH2(31)
Figure GPA00001139555900153
式(31)中，R8表示碳原子数为2～30的2价有机基。式(32)中，t表示0或1。
除以上化合物之外，可以使用在侧链具有烯键性不饱和基的辐射聚合性共聚物等，所述聚合物通过使含有官能团的乙烯基共聚物与具有至少1个烯键性不饱和基和环氧乙烷环、异氰酸酯基、羟基及羧基等官能团的化合物加成反应而得到的。
上述辐射聚合性化合物可以单独使用也可以组合2种以上使用。其中，从可以赋予固化后的耐溶剂性的观点来看优选上述通式(10)表示的辐射聚合性化合物，从可以赋予固化后的可挠性的观点来看优选尿烷丙烯酸酯及尿烷甲基丙烯酸酯。
辐射聚合性化合物的分子量优选为2000以下。分子量超过2000时，有感光性胶粘剂在碱显影液中的溶解性降低的倾向，另外，胶粘膜的粘性降低，有难以在低温下贴附于半导体晶片等粘附体的倾向。
辐射聚合性化合物的含量相对于100质量份碱可溶性聚合物优选为5～250质量份，更优选为20～200质量份。辐射聚合性化合物的量超过250质量份时，聚合的辐射聚合性化合物导致热压接后的胶粘性降低，此外有翘曲增大的倾向。小于5质量份时，曝光后的耐溶剂性降低，有难以形成图案的倾向。
另外，为了提高曝光及再胶粘后的热固性，也可以根据需要使用热自由基产生剂。
为了改善图案形成时的感度，优选光聚合引发剂在300～400nm具有吸収带。作为光聚合引发剂的具体例，可以举出二苯甲酮、N，N’-四甲基-4，4’-二氨基二苯甲酮(米蚩酮)、N，N’-四乙基-4，4’-二氨基二苯甲酮、4-甲氧基-4’-二甲基氨基二苯甲酮、2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁酮-1，2，2-二甲氧基-1，2-二苯基乙烷-1-酮、1-羟基-环己基-苯基-酮、2-甲基-1-(4-(甲硫基)苯基)-2-吗啉代丙酮-1，2，4-二乙基噻吨酮、2-乙基蒽醌及菲醌等芳香族酮、苯偶姻甲基醚、苯偶姻乙基醚及苯偶姻苯基醚等苯偶姻醚、甲基苯偶姻及乙基苯偶姻等苯偶姻、苄基二甲基缩酮等苄基衍生物、2-(邻氯苯基)-4，5-二苯基咪唑二聚物、2-(邻氯苯基)-4，5-二(间甲氧基苯基)咪唑二聚物、2-(邻氟苯基)-4，5-苯基咪唑二聚物、2-(邻甲氧基苯基)-4，5-二苯基咪唑二聚物、2-(对甲氧基苯基)-4，5-二苯基咪唑二聚物、2，4-二(对甲氧基苯基)-5-苯基咪唑二聚物及2-(2，4-二甲氧基苯基)-4，5-二苯基咪唑二聚物等2，4，5-三芳基咪唑二聚物、9-苯基吖啶及1，7-双(9，9’-吖啶基)庚烷等吖啶衍生物、双(2，6-二甲氧基苯甲酰基)-2，4，4-三甲基-戊基氧化膦及双(2，4，6，-三甲基苯甲酰基)-苯基氧化膦等双酰基氧化膦。上述化合物可以单独也可以组合二种以上使用。
光聚合引发剂的量没有特别限定，但相对于100质量份碱可溶性聚合物，通常为0.01～30质量份。
感光性胶粘剂优选进一步含有热固性树脂。本说明书中，所谓热固性树脂，是指能利用热发生交联反应的反应性化合物。作为上述化合物，例如可以举出环氧树脂、氰酸酯树脂、双马来酰亚胺树脂、酚醛树脂、脲树脂、三聚氰胺树脂、醇酸树脂、丙烯酸树脂、不饱和聚酯树脂、苯二甲酸二烯丙酯树脂、有机硅树脂、间苯二酚甲醛树脂、二甲苯树脂、呋喃树脂、聚氨酯树脂、酮树脂、异氰脲酸三烯丙基酯树脂、聚异氰酸酯树脂、含有三(2-羟基乙基)异氰脲酸酯的树脂、含有偏苯三酸三烯丙酯的树脂、由环戊二烯合成的热固性树脂、由芳香族二氨基氰的三聚化得到的热固性树脂等。其中，从可以获得高温下优异的胶粘力的观点来看，优选环氧树脂、氰酸酯树脂及双马来酰亚胺树脂，从操作性及组装半导体装置时对热过程的热反应性的观点来看，特别优选环氧树脂。上述热固性树脂可以单独或组合二种以上使用。
作为环氧树脂，优选分子内具有至少2个环氧基的化合物。从固化性或固化物特性的观点考虑，极优选苯酚的缩水甘油基醚型的环氧树脂。作为上述环氧树脂，例如可以举出双酚A、AD、S或F的缩水甘油基醚、氢化双酚A的缩水甘油基醚、双酚A的环氧乙烷加成物的缩水甘油基醚、双酚A的环氧丙烷加成物的缩水甘油基醚、苯酚酚醛树脂的缩水甘油基醚、甲酚酚醛树脂的缩水甘油基醚、双酚A酚醛清漆树脂的缩水甘油基醚、萘树脂的缩水甘油基醚、3官能型或4官能型的缩水甘油基醚、二环戊二烯酚醛树脂的缩水甘油基醚、二聚酸的缩水甘油基酯、3官能型或4官能型的缩水甘油基胺、萘树脂的缩水甘油基胺。上述树脂可以单独或组合二种以上使用。
作为氰酸酯树脂，例如可以举出2，2’-双(4-苯基氰酸酯)异亚丙基、1，1’-双(4-苯基氰酸酯)乙烷、双(4-氰酸酯-3，5-二甲基苯基)甲烷、1，3-双[4-苯基氰酸酯-1-(1-甲基亚乙基)]苯、氰酸酯苯酚-二环戊二烯加合物、线型酚醛树脂氰酸酯、双(4-苯基氰酸酯)硫醚、双(4-苯基氰酸酯)醚、间苯二酚二氰酸酯、1，1，1-三(4-苯基氰酸酯)乙烷、2-苯基-2-(4-苯基氰酸酯)异亚丙基。上述化合物可以单独或组合二种以上使用。
作为双马来酰亚胺树脂，例如可以举出邻、间或对双马来酰亚胺苯、4-双(对马来酰亚胺枯基)苯、1，4-双(间马来酰亚胺枯基)苯及下述通式(40)、(41)、(42)或(43)表示的马来酰亚胺化合物。上述树脂可以单独或组合二种以上使用。
【化9】
式(40)中，R40表示-○-、-CH2-、-CF2-、-SO2-、-S-、-CO-、-C(CH3)2-或-C(CF3)2-，4个R41分别独立地表示氢原子、低级烷基低级烷氧基、氟、氯或溴，2个Z1分别独立地表示具有烯键性不饱和双键的二羧酸残基。
式(41)中，R42表示-○-、-CH2-、-CF2-、-SO2-、-S-、-CO-、-C(CH3)2-或-C(CF3)2-，4个R43分别独立地表示氢、低级烷基、低级烷氧基、氟、氯或溴，2个Z2分别独立地表示具有烯键性不饱和双键的二羧酸残基。
式(42)中，x表示0～4的整数，多个Z3分别独立地表示具有烯键性不饱和双键的二羧酸残基。
式(43)中，2个R44分别独立地表示2价烃基，多个R45分别独立地表示1价烃基，2个Z4分别独立地表示具有烯键性不饱和双键的二羧酸残基，y表示1以上的整数。
作为式(40)～(43)的Z1、Z2、Z3及Z4，可以举出马来酸残基、柠康酸残基等。
作为式(41)表示的双马来酰亚胺树脂，例如，可以举出4，4-双马来酰亚胺二苯基醚、4，4-双马来酰亚胺二苯基甲烷、4，4-双马来酰亚胺-3，3’-二甲基-二苯基甲烷、4，4-双马来酰亚胺二苯基砜、4，4-双马来酰亚胺二苯基硫化物、4，4-双马来酰亚胺二苯基酮、2’-双(4-马来酰亚胺苯基)丙烷、4-双马来酰亚胺二苯基氟甲烷及1，1，1，3，3，3-六氟-2，2-双(4-马来酰亚胺苯基)丙烷。
作为式(42)表示的双马来酰亚胺树脂，例如，可以举出双[4-(4-马来酰亚胺苯氧基)苯基]醚、双[4-(4-马来酰亚胺苯氧基)苯基]甲烷、双[4-(4-马来酰亚胺苯氧基)苯基]氟甲烷、双[4-(4-马来酰亚胺苯氧基)苯基]砜、双[4-(3-马来酰亚胺苯氧基)苯基]砜、双[4-(4-马来酰亚胺苯氧基)苯基]硫化物、双[4-(4-马来酰亚胺苯氧基)苯基]酮、2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷及1，1，1，3，3，3-六氟-2，2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷。
使用热固性树脂时，为了使其固化，可以在感光性胶粘剂中适当添加固化剂、固化促进剂、催化剂等添加剂。添加催化剂时，可以根据需要使用助催化剂。
使用环氧树脂时，优选使用环氧树脂的固化剂或固化促进剂，较优选并用它们。作为固化剂，例如，可以举出酚类化合物、脂肪族胺、脂环族胺、芳香族聚胺、聚酰胺、脂肪族酸酐、脂环族酸酐、芳香族酸酐、双氰胺、有机酸二酰肼、三氟化硼胺络合物、咪唑类、叔胺、分子中具有至少2个酚性羟基的酚系化合物等。上述固化剂中，从在碱显影液中的溶解性优异的观点来看，优选分子中具有至少2个酚性羟基的酚类化合物。
作为上述分子中具有至少2个酚性羟基的酚类化合物，例如，可以举出苯酚酚醛树脂、甲酚酚醛树脂、叔丁基苯酚酚醛树脂、二环戊二烯甲酚酚醛树脂、二环戊二烯苯酚酚醛树脂、二甲苯改性苯酚酚醛树脂、萘酚酚醛清漆树脂、三酚酚醛清漆树脂、四酚酚醛清漆树脂、双酚A酚醛清漆树脂、聚-对乙烯基酚醛树脂、苯酚芳烷基树脂等。
作为固化促进剂，只要促进环氧树脂的固化即可，没有特别限定，例如，可以举出咪唑类、双氰胺衍生物、二羧酸二酰肼、三苯基膦、四苯基鏻四苯基硼酸酯、2-乙基-4-甲基咪唑-四苯基硼酸酯、1，8-二氮杂双环[5.4.0]十一碳烯-7-四苯基硼酸酯等。
环氧树脂的固化剂量相对于100质量份环氧树脂优选0～200质量份，固化促进剂的量相对于100质量份环氧树脂优选0～50质量份。
作为热固性树脂使用氰酸酯树脂时，优选使用催化剂及根据需要使用助催化剂。作为催化剂，例如可以举出钴、锌、铜等的金属盐或金属络合物等，作为助催化剂，优选烷基苯酚、双酚化合物、酚醛清漆等酚类化合物等。
使用双马来酰亚胺树脂作为热固性树脂时，作为其固化剂，优选使用自由基聚合剂。作为自由基聚合剂，例如可以举出乙酰基环己基磺酰基过氧化物、过氧化异丁酰、过氧化苯甲酰、过氧化辛酰、过氧化乙酰、过氧化二异丙苯、氢过氧化枯烯、偶氮二异丁腈等。此时，自由基聚合剂的使用量相对于100质量份双马来酰亚胺树脂优选0.01～1.0质量份。
从提高胶粘强度等目的来看，感光性胶粘剂可以适当含有偶联剂。作为偶联剂，例如可以举出硅烷偶联剂、钛类偶联剂等，但其中，从可以赋予高胶粘力的观点来看优选硅烷偶联剂。
使用偶联剂时，其使用量相对于100质量份聚酰亚胺优选0～50质量份，较优选0～20质量份。超过50质量份时，有感光性胶粘剂的保存稳定性降低的倾向。
作为硅烷偶联剂，例如可以举出乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、N-(2-氨基乙基)3-氨基丙基甲基二甲氧基硅烷、N-(2-氨基乙基)3-氨基丙基三甲氧基硅烷、3-氨基丙基三乙氧基硅烷、3-氨基丙基三甲氧基硅烷、3-环氧丙氧基丙基三甲氧基硅烷、3-环氧丙氧基丙基甲基二甲氧基硅烷、2-(3，4-环氧基环己基)乙基三甲氧基硅烷、3-异氰酸酯基丙基三乙氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、3-巯基丙基三甲氧基硅烷、3-脲基丙基三乙氧基硅烷、N-(1，3-二甲基亚丁基)-3-(三乙氧基甲硅烷基)-1-丙胺、N，N’-双[3-(三甲氧基甲硅烷基)丙基]乙二胺、聚氧乙烯丙基三烷氧基硅烷及聚乙氧基二甲基硅氧烷。上述硅烷偶联剂可以单独使用或组合二种以上使用。
感光性胶粘剂可以含有填料。作为填料，例如可以举出银粉、金粉、铜粉等金属填料；二氧化硅、氧化铝、氮化硼、二氧化钛、玻璃、氧化铁、硼酸铝、陶瓷等非金属无机填料；炭、橡胶系填料等有机填料等。
上述填料可以根据所希望的功能分别使用。例如，基于向胶粘膜赋予导电性或触变性的目的添加金属填料，基于向胶粘膜赋予低热膨胀性、低吸湿性的目的添加非金属无机填料，基于向胶粘膜赋予韧性的目的添加有机填料。上述金属填料、非金属无机填料及有机填料可以单独使用或组合二种以上使用。使用填料时的混合、混炼可以适当组合通常的搅拌机、研磨搅拌机、三辊研磨机、球磨机等分散机来进行。
使用填料时，其量相对于100质量份碱可溶性聚合物优选1000质量份以下，较优选500质量份以下。下限没有特别限定，但通常为1质量份。填料的量超过1000质量份时，有胶粘性降低的倾向。
感光性胶粘剂在曝光后的100℃下的储能模量优选为0.01～10MPa。该储能模量小于0.01MPa时，图案形成后对于热压接时施加的热及压力的耐性降低，有图案容易破坏的倾向，超过10MPa时，曝光后的再胶粘性降低，图案形成后热压接于粘附体时，有为了得到充分的胶粘力所需的温度提高的倾向。
上述储能模量的值可以通过测定被曝光的包含感光性胶粘剂的试验片的动态粘弹性而得到。动态粘弹性在升温速度：5℃/分钟、频率：1Hz、测定温度：-50℃～200℃的条件下测定。作为测定装置，使用例如Rheometric公司制粘弹性测定器“RSA-2”。
用于测定动态粘弹性的试验片典型地如下所述地准备。首先，将具有PET膜及形成于其一面上的厚度约为40μm的胶粘膜的胶粘片剪裁成35mm×10mm的大小，使用高精度平行曝光机(ORC制作所)在曝光量：1000mJ/cm2的条件下从PET膜侧照射紫外线。曝光后，剥离PET膜，得到上述试验片。
感光性胶粘剂在曝光后进而加热固化后的260℃下的储能模量优选为1MPa以上。该储能模量小于1MPa时，将使用感光性胶粘剂得到的半导体装置焊锡安装于基板时，有难以抑制高温加热导致的剥离或破坏的倾向。
上述储能模量的值通过测定曝光后进而加热固化后的包含感光性胶粘剂的试验片的动态粘弹性而得到。动态粘弹性在升温速度：5℃/分钟、频率：1Hz、测定温度：-50℃～300℃的条件下测定。作为测定装置，例如使用Rheometric公司制粘弹性测定器“RSA-2”。
用于测定上述动态粘弹性的试验片能典型地如下所述地得到：在制作曝光后的用于测定动态粘弹性的试验片的说明中，将在与上述条件相同的条件下曝光得到的胶粘膜进一步在160℃的烘箱中经3小时加热来使其固化而得到。
曝光后、进而加热固化后的热重分析中的感光性胶粘剂的重量减少率达到5％的温度(以下称为“5％重量减少温度”。)优选为260℃以上。5％重量减少温度低于260℃时，将使用感光性胶粘剂得到的半导体装置焊锡安装于基板时，有难以抑制高温加热导致的剥离或破坏的倾向。另外，加热时产生的挥发成分污染周边材料、或构件的可能性提高。
5％重量减少温度是在升温速度：10℃/分钟、空气流量：80mL/分钟、测定温度：40℃～400℃的条件下进行的热重分析中，相对于初期重量的重量减少率达到5％的温度。用于热重分析的试样如下所述地准备：在曝光后、进而加热固化的后的储能模量中的说明中，将在与上述条件相同的条件下曝光及加热得到的胶粘膜使用乳钵粉碎来准备。作为测定装置，例如，使用精工盈司电子科技有限公司制差示热重同时测定装置“EXSTAR 6300”。
以上的诸特性是使用聚酰亚胺、辐射聚合性化合物及光聚合引发剂、以及根据需要使用热固性树脂及填料来调制感光性胶粘剂，并通过调整它们的种类及配合比来实现的。
膜状感光性胶粘剂(胶粘膜)例如可以用下述方法得到：将碱可溶性聚合物、辐射聚合性化合物、光聚合引发剂及根据需要的其他成分在有机溶剂中混合，混炼混合液调制清漆，在基材上形成该清漆层，通过加热将清漆层干燥后根据需要除去基材，由此得到。
可以适当组合通常的搅拌机、研磨搅拌机、三辊研磨机、球磨机等分散机来进行上述混合及混炼。使用热固性树脂时，在干燥中热固性树脂不充分反应的温度下且溶剂充分挥发的条件下干燥。具体而言，通常在60～180℃下加热0.1～90分钟来干燥清漆层。
所谓热固性树脂不充分反应的温度，具体而言，是使用DSC(例如，珀金埃尔默公司制“DSC-7型”(商品名))，在试样量为10mg、升温速度为5℃/min、测定气氛为空气的条件下测定时的反应热的峰温度以下的温度。
用于调制清漆的有机溶剂、即清漆溶剂只要可以均匀地溶解或分散材料，就没有特别限定。例如，可以举出二甲基甲酰胺、甲苯、苯、二甲苯、甲基乙基酮、四氢呋喃、乙基溶纤剂、乙基溶纤剂乙酸酯、二噁烷、环己酮、乙酸乙酯及N-甲基-吡咯烷酮。
清漆层的厚度优选为1～100μm。该厚度小于1μm时，有固定粘附体的功能降低的倾向，超过100μm时，有所得的胶粘膜1中的残留挥发成分增加的倾向。
胶粘膜的残留挥发成分优选为10质量％以下。该残留挥发成分超过10％时，用于组装的加热时存在因溶剂挥发引起的发泡导致胶粘膜内部容易残留空隙，耐湿可靠性容易降低的倾向。另外，加热时产生的挥发成分污染周边材料或构件的可能性也提高。该残留挥发成分如下计算，以剪裁成尺寸为50mm×50mm的胶粘膜的初始质量为M1，以该胶粘膜在160℃的烘箱中加热3小时后的质量为M2时，由残留挥发成分(质量％)＝{(M2-M1)/M1}×100计算。
用于形成胶粘膜的基材能耐受上述干燥条件即可，没有特别限定。例如，可以使用聚酯膜、聚丙烯膜、聚对苯二甲酸乙二醇酯膜、聚酰亚胺膜、聚醚酰亚胺膜、聚醚萘二酸酯膜、甲基戊烯膜作为基材。作为基材的膜可以是组合2种以上得到的多层膜，也可以是表面用有机硅类、二氧化硅类等脱模剂等处理后的膜。

Claims (7)

1.一种半导体装置的制造方法，其中，
具备：
第一工序，其在具有第一连接部的第一粘附体上设置感光性胶粘剂，所述感光性胶粘剂含有碱可溶性聚合物、辐射聚合性化合物和光聚合引发剂，所述碱可溶性聚合物是聚酰亚胺；
第二工序，其通过曝光及显影使所述感光性胶粘剂形成图案，以形成所述第一连接部露出的开口；
第三工序，其向所述开口填充导电材料来形成导电层；
第四工序，其将具有第二连接部的第二粘附体直接胶粘于所述感光性胶粘剂，并且借助所述导电层将所述第一连接部与所述第二连接部进行电连接。
2.根据权利要求1所述的半导体装置的制造方法，其中，
所述第一粘附体或所述第二粘附体的一方是包含多个半导体芯片的半导体晶片，另一方是基板，
在所述第三工序与所述第四工序之间，或者所述第四工序之后，还包括将所述半导体晶片按所述半导体芯片进行切割的工序。
3.根据权利要求1所述的半导体装置的制造方法，其中，
所述碱可溶性聚合物具有羧基或酚性羟基。
4.根据权利要求1所述的半导体装置的制造方法，其中，
所述碱可溶性聚合物的玻璃化转变温度为150℃以下。
5.根据权利要求1所述的半导体装置的制造方法，其中，
所述聚酰亚胺是使四羧酸二酐与二胺反应得到的聚酰亚胺，所述二胺至少包含1种下述化学式(I-a)、(I-b)、(II-a)、(II-b)及(II-c)分别所示的芳香族二胺，
6.根据权利要求1所述的半导体装置的制造方法，其中，
所述感光性胶粘剂还含有热固性树脂。
7.一种半导体装置，其是通过权利要求1～6中任一项所述的半导体装置的制造方法得到的。
CN2008801171626A 2007-12-04 2008-12-02 感光性胶粘剂、半导体装置及半导体装置的制造方法 Expired - Fee Related CN101868852B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-313906 2007-12-04
JP2007313906 2007-12-04
PCT/JP2008/071883 WO2009072493A1 (ja) 2007-12-04 2008-12-02 感光性接着剤、半導体装置及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2012103696275A Division CN103021881A (zh) 2007-12-04 2008-12-02 感光性胶粘剂、半导体装置及半导体装置的制造方法

Publications (2)

Publication Number Publication Date
CN101868852A CN101868852A (zh) 2010-10-20
CN101868852B true CN101868852B (zh) 2012-11-21

Family

ID=40717671

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008801171626A Expired - Fee Related CN101868852B (zh) 2007-12-04 2008-12-02 感光性胶粘剂、半导体装置及半导体装置的制造方法
CN2012103696275A Pending CN103021881A (zh) 2007-12-04 2008-12-02 感光性胶粘剂、半导体装置及半导体装置的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2012103696275A Pending CN103021881A (zh) 2007-12-04 2008-12-02 感光性胶粘剂、半导体装置及半导体装置的制造方法

Country Status (7)

Country Link
US (1) US8349700B2 (zh)
EP (1) EP2219214A1 (zh)
JP (1) JP5526783B2 (zh)
KR (1) KR101138742B1 (zh)
CN (2) CN101868852B (zh)
TW (1) TW200941548A (zh)
WO (1) WO2009072493A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2333609A3 (en) * 2005-07-05 2013-03-27 Hitachi Chemical Company, Ltd. Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part
JP2011215360A (ja) * 2010-03-31 2011-10-27 Toyobo Co Ltd 感光性樹脂組成物
US8790996B2 (en) * 2012-07-16 2014-07-29 Invensas Corporation Method of processing a device substrate
TWI595572B (zh) * 2016-06-29 2017-08-11 摩爾創新科技股份有限公司 具有三維立體結構的電子組件的製造方法
US20200019060A1 (en) * 2017-03-21 2020-01-16 Toray Industries, Inc. Photosensitive resin composition, photosensitive resin composition film, insulating film, and electronic component
JP6399152B2 (ja) * 2017-05-31 2018-10-03 日立化成株式会社 液状感光性接着剤、接着剤層付き半導体ウェハの製造方法、半導体装置の製造方法及び半導体素子付き半導体ウェハの製造方法
JP7045929B2 (ja) * 2018-05-28 2022-04-01 東京エレクトロン株式会社 半導体装置の製造方法および基板処理装置
CN108882552A (zh) * 2018-08-10 2018-11-23 武汉华星光电半导体显示技术有限公司 导电胶及电路板的邦定方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200415749A (en) * 2003-02-06 2004-08-16 Fujitsu Ltd Method of forming electrode-to-electrode connection structure and electrode-to-electrode connection structure formed thereby

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05282706A (ja) * 1991-08-01 1993-10-29 Canon Inc 光記録媒体とその製造方法及び光記録媒体用基板
JP3221756B2 (ja) 1992-12-28 2001-10-22 新日鐵化学株式会社 プリント基板用耐熱性接着剤フィルム及びその使用方法並びにこれを用いたプリント基板の製造方法
JPH1027827A (ja) 1996-07-10 1998-01-27 Toshiba Corp 半導体装置の製造方法
JPH1084014A (ja) * 1996-07-19 1998-03-31 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP3999840B2 (ja) 1997-04-16 2007-10-31 日東電工株式会社 封止用樹脂シート
JPH1124257A (ja) 1997-07-04 1999-01-29 Hitachi Chem Co Ltd 感光性ポリイミド前駆体組成物及びそれを用いたパターン製造法
JP2000290501A (ja) 1999-04-05 2000-10-17 Nitto Denko Corp 感光性ポリイミド樹脂前駆体及び接着剤
JP4748292B2 (ja) 2000-03-15 2011-08-17 信越化学工業株式会社 フィルム状電子部品用接着剤及び電子部品
US6713880B2 (en) * 2001-02-07 2004-03-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same, and method for mounting semiconductor device
JP4343493B2 (ja) 2002-06-19 2009-10-14 三井化学株式会社 半導体チップの積層方法
US7250310B1 (en) 2004-06-21 2007-07-31 National Semiconductor Corporation Process for forming and analyzing stacked die
JP4528676B2 (ja) 2005-06-24 2010-08-18 トヨタ紡織株式会社 消音システム
EP2333609A3 (en) 2005-07-05 2013-03-27 Hitachi Chemical Company, Ltd. Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part
KR100621438B1 (ko) 2005-08-31 2006-09-08 삼성전자주식회사 감광성 폴리머를 이용한 적층 칩 패키지 및 그의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200415749A (en) * 2003-02-06 2004-08-16 Fujitsu Ltd Method of forming electrode-to-electrode connection structure and electrode-to-electrode connection structure formed thereby

Also Published As

Publication number Publication date
WO2009072493A1 (ja) 2009-06-11
KR101138742B1 (ko) 2012-04-24
KR20100077211A (ko) 2010-07-07
US8349700B2 (en) 2013-01-08
JPWO2009072493A1 (ja) 2011-04-21
US20110031631A1 (en) 2011-02-10
EP2219214A1 (en) 2010-08-18
CN103021881A (zh) 2013-04-03
TW200941548A (en) 2009-10-01
CN101868852A (zh) 2010-10-20
JP5526783B2 (ja) 2014-06-18

Similar Documents

Publication Publication Date Title
CN101884104B (zh) 感光性粘接剂
CN101868852B (zh) 感光性胶粘剂、半导体装置及半导体装置的制造方法
JP5444905B2 (ja) 半導体装置の製造方法
CN101365765B (zh) 粘接剂组合物、薄膜状粘接剂、粘接薄片及使用其的半导体装置
CN101681104A (zh) 感光性粘结剂组合物、膜状粘结剂、粘结片、粘结剂图案的形成方法、具有粘结剂层的半导体晶片、半导体装置、以及半导体装置的制造方法
CN102687257A (zh) 半导体装置、半导体装置的制造方法以及带有粘接剂层的半导体晶片
CN102598234A (zh) 粘接剂组合物、使用该粘接剂组合物的半导体装置及其制造方法
JP5098607B2 (ja) 半導体装置の製造方法
JP5251094B2 (ja) 半導体装置及びその製造方法
CN103250235A (zh) 带粘接剂层的半导体晶片、半导体装置的制造方法及半导体装置
JP5092719B2 (ja) 半導体装置及びその製造方法
JP2009141008A (ja) 半導体装置及びその製造方法、並びに、感光性接着フィルム
JP2009141017A (ja) 半導体装置及びその製造方法
JP5428152B2 (ja) 接続構造体の製造方法
JP2009141016A (ja) 半導体装置の製造方法、感光性接着剤及び半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121121

Termination date: 20151202

EXPY Termination of patent right or utility model