CN101868762B - 含硅氧烷的可光图案化沉积抑制剂 - Google Patents

含硅氧烷的可光图案化沉积抑制剂 Download PDF

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Publication number
CN101868762B
CN101868762B CN2008801168040A CN200880116804A CN101868762B CN 101868762 B CN101868762 B CN 101868762B CN 2008801168040 A CN2008801168040 A CN 2008801168040A CN 200880116804 A CN200880116804 A CN 200880116804A CN 101868762 B CN101868762 B CN 101868762B
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CN
China
Prior art keywords
deposition
deposition inhibitor
photopatternable
inhibitor material
organosiloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2008801168040A
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English (en)
Chinese (zh)
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CN101868762A (zh
Inventor
L·M·欧文
D·H·莱维
D·C·弗里曼
C·杨
P·J·考德里-科万
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Eastman Kodak Co
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Eastman Kodak Co
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Publication date
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Publication of CN101868762A publication Critical patent/CN101868762A/zh
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Publication of CN101868762B publication Critical patent/CN101868762B/zh
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN2008801168040A 2007-11-20 2008-11-10 含硅氧烷的可光图案化沉积抑制剂 Expired - Fee Related CN101868762B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/942780 2007-11-20
US11/942,780 US7846644B2 (en) 2007-11-20 2007-11-20 Photopatternable deposition inhibitor containing siloxane
PCT/US2008/012632 WO2009067148A1 (en) 2007-11-20 2008-11-10 Photopatternable deposition inhibitor containing siloxane

Publications (2)

Publication Number Publication Date
CN101868762A CN101868762A (zh) 2010-10-20
CN101868762B true CN101868762B (zh) 2013-03-27

Family

ID=40328571

Family Applications (1)

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CN2008801168040A Expired - Fee Related CN101868762B (zh) 2007-11-20 2008-11-10 含硅氧烷的可光图案化沉积抑制剂

Country Status (5)

Country Link
US (1) US7846644B2 (enExample)
EP (1) EP2212747B1 (enExample)
JP (1) JP2011505588A (enExample)
CN (1) CN101868762B (enExample)
WO (1) WO2009067148A1 (enExample)

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US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
JP5572447B2 (ja) * 2010-05-25 2014-08-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US8618003B2 (en) 2011-12-05 2013-12-31 Eastman Kodak Company Method of making electronic devices using selective deposition
KR101941908B1 (ko) * 2011-12-16 2019-01-24 후지필름 가부시키가이샤 레지스트 박리액 및 레지스트 박리 방법
KR101862547B1 (ko) 2012-04-13 2018-05-31 삼성전자주식회사 폴리실리콘막 형성 방법 및 반도체 장치의 제조 방법
US20140065838A1 (en) * 2012-08-31 2014-03-06 Carolyn R. Ellinger Thin film dielectric layer formation
US8791023B2 (en) * 2012-08-31 2014-07-29 Eastman Kodak Company Patterned thin film dielectric layer formation
US8927434B2 (en) * 2012-08-31 2015-01-06 Eastman Kodak Company Patterned thin film dielectric stack formation
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
US9634145B2 (en) 2014-10-29 2017-04-25 Eastman Kodak Company TFT substrate with variable dielectric thickness
US9368490B2 (en) 2014-10-29 2016-06-14 Eastman Kodak Company Enhancement-depletion mode inverter with two transistor architectures
US9368491B2 (en) 2014-10-29 2016-06-14 Eastman Kodak Company Enhancement mode inverter with variable thickness dielectric stack
JP6259023B2 (ja) 2015-07-20 2018-01-10 ウルトラテック インク 電極系デバイス用のａｌｄ処理のためのマスキング方法
US9861974B2 (en) * 2015-08-31 2018-01-09 GM Global Technology Operations LLC Film system
US10052622B2 (en) * 2016-02-12 2018-08-21 GM Global Technology Operations LLC Method of forming a self-cleaning film system
US10020327B2 (en) 2016-06-07 2018-07-10 Eastman Kodak Company Method for selective thin film deposition
CN108063089B (zh) * 2016-11-08 2020-07-17 中国科学院微电子研究所 一种mos器件原子层沉积原位制备方法
KR102112705B1 (ko) * 2016-12-09 2020-05-21 주식회사 원익아이피에스 박막 증착 방법
US10583428B2 (en) 2017-05-18 2020-03-10 GM Global Technology Operations LLC Self-cleaning film system and method of forming same
US10533249B2 (en) * 2017-05-18 2020-01-14 GM Global Technology Operations LLC Method of forming a self-cleaning film system
US10556231B2 (en) 2017-05-18 2020-02-11 GM Global Technology Operations LLC Self-cleaning film system and method of forming same
US10754067B2 (en) 2017-05-18 2020-08-25 GM Global Technology Operations LLC Textured self-cleaning film system and method of forming same
US10429641B2 (en) 2017-05-31 2019-10-01 GM Global Technology Operations LLC Light-enhanced self-cleaning film system and method of forming same
CN109080876B (zh) * 2017-06-14 2023-01-17 张家港康得新光电材料有限公司 利用保护膜的产品加工方法
KR20210070110A (ko) * 2019-12-04 2021-06-14 주성엔지니어링(주) 전극 형성 방법
CN111769210B (zh) * 2020-07-14 2023-08-08 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN116351662B (zh) * 2023-03-31 2024-05-17 浙江大学 一种聚合物薄膜区域选择性沉积的方法
CN116924321A (zh) * 2023-07-05 2023-10-24 中国科学院上海微系统与信息技术研究所 一种层状结构、制备方法及传感器件
WO2025126882A1 (ja) * 2023-12-11 2025-06-19 富士フイルム株式会社 組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法、化合物

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Also Published As

Publication number Publication date
JP2011505588A (ja) 2011-02-24
CN101868762A (zh) 2010-10-20
US7846644B2 (en) 2010-12-07
WO2009067148A1 (en) 2009-05-28
EP2212747A1 (en) 2010-08-04
EP2212747B1 (en) 2015-07-22
US20090130608A1 (en) 2009-05-21

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Granted publication date: 20130327

Termination date: 20191110