CN101866961A - Light trapping structure for thin film silicon/crystalline silicon heterojunction solar battery - Google Patents
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Abstract
The invention discloses a light trapping structure for a thin film silicon/crystalline silicon heterojunction solar battery, which comprises a crystalline silicon substrate (2), a doped thin film silicon layer (3) on the crystalline silicon substrate (2), a transparent conductive electrode (4) on the doped thin film silicon layer (3), and a metal nano-structure (1) between the doped thin film silicon layer (3) and the transparent conductive electrode (4), a metal nano-structure (1) above the transparent conductive electrode (4), or a metal nano-structure (1) inside the transparent conductive electrode (4). The connecting surface of the crystalline silicon substrate (2) and the crystalline silicon substrate (2) is not specially woven with velvet. The light trapping structure acquires a light trapping effect by using a surface plasmon effect of the metal nano-structure.
Description
Technical field
The present invention relates to a kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery, particularly a kind of surface plasmons effect of utilizing metal Nano structure falls into the light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery of light.
Background technology
Thin film silicon/crystalline silicon heterojunction solar battery is a kind of high-efficiency crystal silicon solar cell that can adopt low-cost realization.This solar cell utilizes the doping film silicon layer to make the pn knot on the crystal silicon substrate.This layer film silicon layer has only tens nanometer thickness usually, and can using plasma assistant chemical vapor deposition (PECVD) technology finish in deposit below 200 ℃, therefore, than traditional solar cell by diffusion preparation pn knot, the energy requirement less investment of thin film silicon/crystalline silicon heterojunction solar battery institute, technology is also simple relatively.The band gap of membrane silicon layer is general all greater than the band gap of crystal silicon substrate, and this also helps thin film silicon/crystalline silicon heterojunction solar battery and obtains high open circuit voltage.
But the performance of thin film silicon/crystalline silicon heterojunction solar battery is subjected to having a strong impact on of thin film silicon/crystalline silicon heterojunction interface.Interfacial state can constitute the complex centre of charge carrier, and interface state density is too high, the solar cell decreased performance.In order to reduce interfacial state, Japan Sanyo company has developed HIT (Heterojunction with Intrinsic Thin Layer) solar cell (U.S. Patent application 20020069911-A1), utilize amorphous silicon layer that passivation is carried out on the crystal silicon surface, thereby improved battery performance.Yet, adopt the technology of amorphous silicon passivation heterojunction boundary to implement and be not easy.Particularly common solar cell is in order to obtain excellent sunken light effect, need knit suede to the crystal silicon substrate surface, such as adopting alkaline corrosion liquid to etch pyramid structure at silicon chip surface, the crystal silicon substrate surface of knitting behind the suede has higher defect state density, like this, heterojunction boundary is carried out the just further increase of difficulty of passivation.This is the main cause that a lot of research institutions are difficult to obtain the high performance thin film silicon/crystalline silicon heterojunction solar battery.So, must find to obtain well to fall into light effect, can improve the effective ways of heterojunction boundary quality again.
Utilize the surface plasmons effect of metal Nano structure, can obtain well to fall into light effect.Japanese patent application 2009246025-A1 discloses a kind of thin-film solar cell structure, and the metal level that wherein directly adopts the metal nanoparticle formation is as back-contact electrode.International patent application 2009012397-A2 discloses a kind of schottky junction (semiconductor alloy knot, MS structure) photovoltaic device, and wherein employing contains the metal level of the metal level of metal Nano structure as the MS knot, and its light that can absorb specific wavelength produces hot electron.
Summary of the invention
The objective of the invention is to overcome the shortcoming of prior art, propose a kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery that contains metal Nano structure.The present invention can make thin film silicon/crystalline silicon heterojunction solar battery obtain excellent sunken light effect, and the thin film silicon/crystalline silicon heterojunction interface state density is reduced, thereby obtains excellent solar cell performance.
The present invention makes metal Nano structure on brilliant surface of silicon substrate, utilize the surface plasmons effect of metal Nano structure to obtain to fall into light effect.Like this, this surface of the crystal silicon substrate that is adopted just needn't specially make matte again, has reduced the interface state density at thin film silicon/crystalline silicon heterojunction interface thus, the easier acquisition high-performance of the solar cell that utilizes the present invention to prepare.
Light trapping structure of the present invention comprises: crystal silicon substrate, the doping film silicon layer on described crystal silicon substrate, the metal Nano structure on described doping film silicon layer, and the transparency conductive electrode on described metal Nano structure; And the surface that described crystal silicon substrate and described doping film silicon layer join is less than through specially knitting suede.
Perhaps, described light trapping structure comprises: crystal silicon substrate, the doping film silicon layer on described crystal silicon substrate, the transparency conductive electrode on described doping film silicon layer, and the metal Nano structure on described transparency conductive electrode; And the surface that described crystal silicon substrate and described doping film silicon layer join is less than through specially knitting suede.
Perhaps, described light trapping structure comprises: the crystal silicon substrate, and the doping film silicon layer on described crystal silicon substrate, the transparency conductive electrode on described doping film silicon layer, and at the metal Nano structure of described transparency conductive electrode inside; And the surface that described crystal silicon substrate and described doping film silicon layer join is less than through specially knitting suede.
Described metal Nano structure can be nano particle, nano strip, nanometer plate or nanometer spacial framework.
In the light trapping structure of thin film silicon/crystalline silicon heterojunction solar battery of the present invention, can also further contain one deck intrinsic membrane silicon layer between described crystal silicon substrate and described doping film silicon layer, described intrinsic membrane silicon layer plays the effect at passivation film silicon/crystalline silicon heterojunction interface.
In the light trapping structure of thin film silicon/crystalline silicon heterojunction solar battery of the present invention, can also on transparency conductive electrode, further contain the metal grid lines that improves electric current collection efficient.
This light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery of the present invention both can be used on the side to light of solar cell, also can be used on the shady face of solar cell.
By implementing the present invention, when guaranteeing that thin film silicon/crystalline silicon heterojunction solar battery obtains excellent sunken light effect, can obtain better thin film silicon/crystalline silicon heterojunction interface quality, thereby obtain better solar cell performance.
Description of drawings
Fig. 1 light trapping structure schematic diagram that is used for thin film silicon/crystalline silicon heterojunction solar battery of the present invention;
Light trapping structure schematic diagram among Fig. 2 embodiment 1;
Light trapping structure schematic diagram among Fig. 3 embodiment 2;
Light trapping structure schematic diagram among Fig. 4 embodiment 3;
Light trapping structure schematic diagram among Fig. 5 embodiment 4;
Light trapping structure schematic diagram among Fig. 6 embodiment 5;
Light trapping structure schematic diagram among Fig. 7 embodiment 6;
Light trapping structure schematic diagram among Fig. 8 embodiment 7;
Light trapping structure schematic diagram among Fig. 9 embodiment 8;
Light trapping structure schematic diagram among Figure 10 embodiment 9;
Light trapping structure schematic diagram among Figure 11 embodiment 10;
Light trapping structure schematic diagram among Figure 12 embodiment 11;
Light trapping structure schematic diagram among Figure 13 embodiment 12.
Among the figure: 1 metal Nano structure, 2 crystal silicon substrates, 3 doping film silicon layers, 4 transparency conductive electrodes, 5 intrinsic membrane silicon layer, 6 metal grid lines.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
As shown in Figure 1, the light trapping structure that the present invention is used for thin film silicon/crystalline silicon heterojunction solar battery comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2), metal Nano structure (1) on described doping film silicon layer (3), and the transparency conductive electrode (4) on described metal Nano structure (1); And the surface that described crystal silicon substrate (2) and described doping film silicon layer (3) join is less than through specially knitting suede.
Perhaps, described light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2), the transparency conductive electrode (4) on described doping film silicon layer (3), and the metal Nano structure (1) on described transparency conductive electrode (4); And the surface that described crystal silicon substrate (2) and described doping film silicon layer (3) join is less than through specially knitting suede.
Perhaps, described light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2), the transparency conductive electrode (4) on described doping film silicon layer (3), and at the inner metal Nano structure (1) of described transparency conductive electrode (4); And the surface that described crystal silicon substrate (2) and described doping film silicon layer (3) join is less than through specially knitting suede.
In the light trapping structure of thin film silicon/crystalline silicon heterojunction solar battery of the present invention, can also contain one deck intrinsic membrane silicon layer (5) between described crystal silicon substrate (2) and described doping film silicon layer (3), described intrinsic membrane silicon layer (5) plays the effect at passivation film silicon/crystalline silicon heterojunction interface.
In the light trapping structure of thin film silicon/crystalline silicon heterojunction solar battery of the present invention, can also on described transparency conductive electrode (4), further contain the metal grid lines (6) that improves electric current collection efficient.
By on thin film silicon/crystalline silicon heterojunction solar battery, implementing the present invention, can be when guaranteeing that thin film silicon/crystalline silicon heterojunction solar battery obtains excellent sunken light effect, obtain better thin film silicon/crystalline silicon heterojunction interface quality, thereby obtain better solar cell performance.
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 2, this light trapping structure comprises: crystal silicon substrate (2), the doping film silicon layer (3) on described crystal silicon substrate (2) side to light, the metal Nano structure (1) on described doping film silicon layer (3), and the transparency conductive electrode (4) on described metal Nano structure (1); Wherein, the side to light of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nanoparticle.
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 3, this light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2) side to light, transparency conductive electrode (4) on described doping film silicon layer (3), and the metal Nano structure (1) on described transparency conductive electrode (4); Wherein, the side to light of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is the metal nano spatial network.
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 4, this light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2) shady face, transparency conductive electrode (4) on described doping film silicon layer (3), and at the inner metal Nano structure (1) of described transparency conductive electrode (4); Wherein, the shady face of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is the metal nano dish.
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 5, this light trapping structure comprises: crystal silicon substrate (2), intrinsic membrane silicon layer (5) on described crystal silicon substrate (2) side to light, doping film silicon layer (3) on described intrinsic membrane silicon layer (5), metal Nano structure (1) on described doping film silicon layer (3), and the transparency conductive electrode (4) on described metal Nano structure (1); Wherein, the side to light of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nanoparticle.
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 6, this light trapping structure comprises: crystal silicon substrate (2), intrinsic membrane silicon layer (5) on described crystal silicon substrate (2) shady face, doping film silicon layer (3) on described intrinsic membrane silicon layer (5), transparency conductive electrode (4) on described doping film silicon layer (3), and the metal Nano structure (1) on described transparency conductive electrode (4); Wherein, the shady face of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is the metal nano dish.
Embodiment 6
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 7, this light trapping structure comprises: crystal silicon substrate (2), intrinsic membrane silicon layer (5) on described crystal silicon substrate (2) side to light, doping film silicon layer (3) on described intrinsic membrane silicon layer (5), transparency conductive electrode (4) on described doping film silicon layer (3), and at the inner metal Nano structure (1) of described transparency conductive electrode (4); Wherein, the side to light of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is the metal nano spatial network.
Embodiment 7
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 8, this light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2) shady face, metal Nano structure (1) on described doping film silicon layer (3), transparency conductive electrode (4) on described metal Nano structure (1), and the metal grid lines (6) on described transparency conductive electrode (4); Wherein, the shady face of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nanoparticle.
Embodiment 8
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 9, this light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2) shady face, transparency conductive electrode (4) on described doping film silicon layer (3), metal Nano structure (1) on described transparency conductive electrode (4), and the metal grid lines (6) on described metal Nano structure (1); Wherein, the shady face of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is the metal nano spatial network.
Embodiment 9
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 10, this light trapping structure comprises: crystal silicon substrate (2), doping film silicon layer (3) on described crystal silicon substrate (2) side to light, transparency conductive electrode (4) on described doping film silicon layer (3), at the inner metal Nano structure (1) of described transparency conductive electrode (4), and the metal grid lines (6) on described transparency conductive electrode (4); Wherein, the side to light of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nanoparticle.
Embodiment 10
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 11, this light trapping structure comprises: crystal silicon substrate (2), intrinsic membrane silicon layer (5) on described crystal silicon substrate (2) shady face, doping film silicon layer (3) on described intrinsic membrane silicon layer (5), metal Nano structure (1) on described doping film silicon layer (3), transparency conductive electrode (4) on described metal Nano structure (1), and the metal grid lines (6) on described transparency conductive electrode (4); Wherein, the shady face of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nanoparticle.
Embodiment 11
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 12, this light trapping structure comprises: crystal silicon substrate (2), intrinsic membrane silicon layer (5) on described crystal silicon substrate (2) side to light, doping film silicon layer (3) on described intrinsic membrane silicon layer (5), transparency conductive electrode (4) on described doping film silicon layer (3), metal Nano structure (1) on described transparency conductive electrode (4), and the metal grid lines (6) on described metal Nano structure (1); Wherein, the side to light of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nano strip.
Embodiment 12
A kind of light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery as shown in Figure 13, this light trapping structure comprises: crystal silicon substrate (2), intrinsic membrane silicon layer (5) on described crystal silicon substrate (2) shady face, doping film silicon layer (3) on described intrinsic membrane silicon layer (5), transparency conductive electrode (4) on described doping film silicon layer (3), at the inner metal Nano structure (1) of described transparency conductive electrode (4), and the metal grid lines (6) on described transparency conductive electrode (4); Wherein, the shady face of described crystal silicon substrate (2) is less than through specially knitting suede, and described metal Nano structure (1) is a metal nanoparticle.
Claims (4)
1. light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery, it is characterized in that, described light trapping structure comprises: crystal silicon substrate (2), at the doping film silicon layer (3) on the described crystal silicon substrate (2), metal Nano structure (1) on described doping film silicon layer (3), and the transparency conductive electrode (4) on described metal Nano structure (1); The surface that described crystal silicon substrate (2) and described doping film silicon layer (3) join is less than through specially knitting suede.
2. light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery, it is characterized in that, described light trapping structure comprises: crystal silicon substrate (2), in the lip-deep doping film silicon layer of described crystal silicon substrate (2) (3), transparency conductive electrode (4) on described doping film silicon layer (3), and the metal Nano structure (1) on described transparency conductive electrode (4); The surface that described crystal silicon substrate (2) and described doping film silicon layer (3) join is less than through specially knitting suede.
3. light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery, it is characterized in that, described light trapping structure comprises: crystal silicon substrate (2), in the doping film silicon layer (3) on the described crystal silicon substrate (2), transparency conductive electrode (4) on described doping film silicon layer (3), and at the inner metal Nano structure (1) of described transparency conductive electrode (4); The surface that described crystal silicon substrate (2) and described doping film silicon layer (3) join is less than through specially knitting suede.
4. according to any one described light trapping structure that is used for thin film silicon/crystalline silicon heterojunction solar battery of claim 1 to 3, it is characterized in that, between described crystal silicon substrate (2) and described doping film silicon layer (3), further contain one deck intrinsic membrane silicon layer (5).
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| CN105390553B (en) * | 2014-09-02 | 2019-01-25 | 财团法人工业技术研究院 | Method for forming solar cell module |
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