CN103258870A - Solar cell - Google Patents
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- CN103258870A CN103258870A CN2012100348044A CN201210034804A CN103258870A CN 103258870 A CN103258870 A CN 103258870A CN 2012100348044 A CN2012100348044 A CN 2012100348044A CN 201210034804 A CN201210034804 A CN 201210034804A CN 103258870 A CN103258870 A CN 103258870A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention provides a solar cell. The solar cell comprises a transparent substrate (10) and a transparent substrate (20), a transparent first electrode layer (11) and a transparent first electrode layer (21) which are formed on the transparent substrates, a photovoltaic conversion layer (13) and a photovoltaic conversion layer (23) which are formed on the first electrode layers, a nanometer particle layer (15) and a nanometer particle layer (25) which are formed on the photovoltaic conversion layers, a second electrode layer (16) and a second electrode layer (26) which are formed on the nanometer particle layers, and a backing plate (17) and a backing plate (28) which are formed on the second electrode layers. The nanometer particle layers are made of at least one of a mixture of molybdenum oxide and silver, titanium oxide, and a mixture of zinc oxide and silver. The nanometer particle layers are further formed between the second electrode layers and the backing plates. The nanometer particle layers are additionally arranged on shady faces of the photovoltaic conversion layers, due to the fact that the nanometer particle layers have a good scattering effect and are matched with the first electrode layers in front of the photovoltaic conversion layers, penetration times of light in the photovoltaic conversion layers are increased, and therefore the probability of being captured can be increased.
Description
Technical field
The present invention relates to a kind of solar cell, relate in particular to a kind of thin-film solar cells that can improve the light capture effect.
Background technology
To having carried out many years as the research of the solar cell of important cleaning energy source.Solar cell thinks that usually the solid crystals structure is feature, described solid crystals structure they valence band and their conduct electricity subband between have band gap.When light was absorbed by material, the electronics that occupies lower state was stimulated and passes band gap to higher energy state.For example, when the electronics in the semiconductor valence band during from the enough energy of the photonic absorption of solar radiation, they can jump over band gap to more high-octane conduction band.The electronics that is excited to higher energy state stays energy position or the hole that does not occupy.The same with the free electron in the conduction band, this hole can be mobile also thus as electric charge carrier between atom in lattice, and help the conductivity of crystal.The most of photons that absorb in the semiconductor produce this electron hole pair, and this electron hole pair produces photoelectric current also and then produces the photovoltage that is demonstrated by solar cell.The space charge layer (space charge layer) that semiconductor doping has different materials with generation electric charge carrier (being hole and electronics) to be separated.In case separate, the hole of these collections and electron charge charge carrier produce space charge, and this space charge causes the voltage across the interface as photovoltage.If these holes and electric charge carrier allow to flow through external loading, they constitute photoelectric current so.
For solar cell, thin-film solar cells particularly, the key that makes its function admirable are to optimize photoelectric conversion semiconductor layer to the absorption of luminous energy, and reduce the light loss consumption in the device simultaneously.Can absorb luminous energy to greatest extent in very thin absorbed layer, be the essential condition of high conversion efficiency.Comprise that the solar cell that amorphous silicon hydride (a-Si:H) and microcrystalline hydrogenated silicon (μ c-Si:H) constitute has the p-i-n structure usually, wherein p layer and n layer are sluggish " dead layer " (dead layer), they set up a built-in electric field in the i of non-doping layer (absorbed layer), thereby make photic charge carrier by effective collection.The thickness of its absorbed layer generally has only a hundreds of micron, is no more than about 2000 microns at most.And the absorption coefficient of the ruddiness of hydrogenated silicon film by utilizing and infrared light is all lower, so there is very most sunlight not to be effectively used.Usually the p-i-n structure based on hydrogenated silicon film by utilizing is sandwiched in former and later two electrodes (electric contacting layer), and forms complete photovoltaic element.Electrode must have good transparency and conductivity before normally used, and it normally is made of transparent conductive oxide (TCO), such as thickness is the tin oxide that is doped or the zinc-oxide film of 600 to 900 nanometers.Rear electrode is made of jointly a TCO and lighttight metallic film usually, and an one important function is exactly with among the unabsorbed smooth reflected back p-i-n structure.Attempted various ways and improved absorption to light, comprising use coarse transparent before electrode, to strengthen scattering of light.In addition, also use the higher back electrode of reflecting rate, and made unabsorbed light be got back in the battery by throwing again.
Yet said structure is very limited to the raising effect of light capture effect (light-trapping effect).Thereby, be necessary prior art is made improvements.
Summary of the invention
The purpose of this invention is to provide a kind of solar cell that can improve light capture effect (light-trapping effect).
For achieving the above object, the invention provides a kind of solar cell, comprising:
Transparency carrier;
Be formed at first on the described transparency carrier, the transparent electrode layer;
Be formed at the photoelectric conversion layer on described first electrode layer;
Be formed at the nanoparticle layer on the described photoelectric conversion layer;
Be formed at the second electrode lay on the described nanoparticle layer; And
Be formed at the backboard on the described the second electrode lay;
At least a in the mixture, titanium oxide, zinc oxide that the material of described nanoparticle layer comprises molybdenum oxide and silver and the silver-colored mixture.
Optionally, also be formed with described nanoparticle layer between described the second electrode lay and the described backboard.
Optionally, described nanoparticle layer is formed on the described photoelectric conversion layer by steaming altogether.
Optionally, be formed with diffuse reflector between described nanoparticle layer and the described the second electrode lay.
Optionally, described diffuse reflector is the paper tinsel of reflection or diffused light.
Optionally, the material of described diffuse reflector is polyvinyl butyral resin.
Optionally, the material of described photoelectric conversion layer is selected from by amorphous silicon, microcrystal silicon, monocrystalline silicon, polysilicon, amorphous SiC, amorphous SiN, amorphous SiGe, amorphous SiSn, GaAs, AlGaAs, InP, GaP, CIGS, CdTe, Cu
2In the set that S, ZnTe, PbS, CIS, GaSb form any one.
Optionally, the material of described photoelectric conversion layer is amorphous silicon or amorphous silicon-crystalline/micro-crystalline silicon laminated, and wherein amorphous silicon-crystalline/micro-crystalline silicon laminated non-crystalline/micro-crystalline silicon that also claims piles up (micromorph).
Optionally, described transparency carrier is glass.
Compared with prior art, the present invention sets up the nanoparticle layer at the shady face of photoelectric conversion layer, the nanoparticle layer has good dispersion effect, it matches with first electrode layer (being generally the TCO film) in photoelectric conversion layer the place ahead, improve light and in photoelectric conversion layer, penetrated number of times, thereby increased captive probability.
Description of drawings
Describe one exemplary embodiment in more detail by the reference accompanying drawing, it is more obvious that above and other feature and advantage will become for those skilled in the art, in the accompanying drawing:
Fig. 1 is the schematic cross-section of solar cell first embodiment of the present invention.
Fig. 2 is the schematic cross-section of the change structure of first embodiment.
Fig. 3 is the schematic cross-section of solar cell second embodiment of the present invention.
Fig. 4 is the schematic cross-section of the change structure of second embodiment.
Embodiment
Exemplary embodiment is more fully described hereinafter with reference to the accompanying drawings; Yet they can be implemented with different forms, and should not be construed as limited to the embodiment that sets forth here.But, provide these embodiment to make the disclosure thorough and complete, and scope of the present invention is fully conveyed to those skilled in the art.
In the accompanying drawings, clear for what illustrate, size and the relative size in floor and district can be exaggerated.Should be appreciated that when claim one deck or element another layer or substrate " on " time, can perhaps can also there be the layer of insertion in it directly on another layer or substrate.In addition, should be appreciated that when claiming one deck at another layer D score that can perhaps can also there be the layer of one or more insertions in it directly under another layer.In addition, it is also understood that it can be the unique layer between these two layers, perhaps can also have the layer of one or more insertions when claiming one deck at two layers " centre ".Identical Reference numeral refers to components identical all the time.
Be to be understood that, when claim an element or layer another element or layer " on ", when " being connected to " or " being couple to " another element or layer, it can be directly on another element or layer, be directly connected to or be couple to another element or layer, perhaps can have element or the layer of insertion.On the contrary, when claim an element " directly " another element or layer " on ", when " being directly connected to " or " being directly coupled to " another element or layer, do not exist insertion element or layer.Identical Reference numeral refers to components identical.As used herein, term " and/or " comprise any of one or more listed relevant items and all combinations.
Though should be appreciated that and can use the term first, second, third, etc. to describe various elements, assembly, zone, layer and/or part here, these elements, assembly, zone, layer and/or part should not be subject to these terms.These terms only are used for an element, assembly, zone, layer or part and another zone, layer or part are differentiated.Therefore, first element discussed below, assembly, zone, layer or part can be called as second element, assembly, zone, layer or partly not deviate from the instruction of exemplary embodiment.
Can use the space relativity term that waits such as " going up (upper) " with the description relation between element or feature and another (a bit) element or the feature as shown in drawings herein for ease of describing.Should be appreciated that space relativity term is to summarize the different orientation of device in using or operating except orientation shown in the accompanying drawing.Device can additionally be orientated (revolve turn 90 degrees or in other orientation).
Terminology used here only is in order to describe certain exemplary embodiments, not really want to limit exemplary embodiment.As used herein, unless context has clearly statement in addition, otherwise singulative " " and " being somebody's turn to do " all are intended to comprise plural form simultaneously.It should also be understood that, term " comprises " and/or " comprising ", when using in this manual, specify the existence of described feature, integral body, step, operation, element and/or assembly, but do not got rid of one or more other existence or increases of feature, integral body, step, operation, element, assembly and/or its combination.
Here describe exemplary embodiment with reference to sectional view, these sectional views are the schematic diagram of idealized exemplary embodiment (and intermediate structure).Thereby for instance, the variation of the illustration shape that is caused by manufacturing technology and/or tolerance is contingent.Therefore, exemplary embodiment should not be construed as limited to the given shape in the zone that illustrates herein, but comprises by falling as make the form variations that causes.For example, the injection zone that is illustrated as rectangle will have circle or crooked feature and/or usually in the gradient of the implantation concentration of its edge, rather than the binary from injection zone to non-injection zone changes.Similarly, by injecting imbedding the zone and can causing passing some injections in the zone between the surface of its generation imbedding zone and injection of forming.Therefore, the zone shown in the accompanying drawing comes down to schematically, and their shape does not really want to illustrate the true shape of device area, does not really want to limit the scope of exemplary embodiment yet.
Unless otherwise defined, all terms (comprising technical term and scientific terminology) that herein use all have the same implication of the those of ordinary skill institute common sense in the affiliated field of the present invention.It should also be understood that, such as defined term in the universaling dictionary, unless clearly define, otherwise should be interpreted as having the implication consistent with they implications in the linguistic context of association area, and should not be interpreted as Utopian or excessive formal meaning herein.
Embodiment 1
Fig. 1 is the sectional view of first embodiment of the invention solar battery structure.Solar cell as shown in Figure 1 comprises:
Be positioned at first on the transparency carrier 10, the transparent electrode layer 11;
Be positioned at the photoelectric conversion layer 13 on first electrode layer 11;
Be positioned at the nanoparticle layer 15 on the photoelectric conversion layer 13;
Be positioned at the second electrode lay 16 on the nanoparticle layer 15, transparent;
Be positioned at the backboard 17 on the second electrode lay 16.
Wherein, transparency carrier 10 is glass.First electrode layer 11 is for being plated in transparent conductive oxide on glass (Transparent Conductive Oxide) film.Can comprise suitable materials such as tin oxide, zinc oxide, tin indium oxide and combination thereof in the transparent conductive oxide film, also can comprise other doping composition.For example, when the transparent conductive oxide film is zinc oxide, can be in zinc oxide compositions such as adulterated al, gallium, boron.In forming process, the surface of transparent conductive oxide film forms matte (textured surface), as shown in Figure 1.
As nanostructure (nanostructure), nanoparticle layer 15 is in forming process, and the surface nature can form uneven structure as shown in Figure 1.In the specific implementation, the material of nanoparticle layer 15 can comprise the mixture (MO3:Ag) of molybdenum oxide and silver, titanium oxide (TiO2), and at least a in zinc oxide and the silver-colored mixture (ZnO:Ag).Nanoparticle layer 15 can be used common steaming technique (co-evaportion techniques) and form.
The second electrode lay 16 also is transparent conductive oxide (Transparent Conductive Oxide) film.Can comprise suitable materials such as tin oxide, zinc oxide, tin indium oxide, tannic acid cadmium and combination thereof in the transparent conductive oxide film, also can comprise other doping composition.For example, when the transparent conductive oxide film is zinc oxide, can be in zinc oxide compositions such as adulterated al, gallium, boron.In forming process, the surface of transparent conductive oxide film can form the matte (not shown).
Owing to set up nanoparticle layer 15 at the shady face of photoelectric conversion layer 13, nanoparticle layer 15 has good dispersion effect, itself and backboard 17 match with first electrode layer 11 in photoelectric conversion layer 13 the place aheads jointly, improve light and penetrated number of times in the photoelectric conversion layer 13, thereby increased captive probability, be conducive to improve photoelectric conversion efficiency.
For further improving light conversion efficiency, also can be formed with the diffuse reflector (not shown) between nanoparticle layer 15 and the second electrode lay 16.As an embodiment, described diffuse reflector is the paper tinsel layer of reflection or diffused light.As another embodiment, the material of described diffuse reflector can be polyvinyl butyral resin (polyvinyl butyral, PVB).
The present invention also provides a kind of manufacture method of above-mentioned solar cell, i.e. superstrate configuration, and it comprises:
Form first electrode layer 11 at transparency carrier 10;
Form photoelectric conversion layer 13 at first electrode layer 11;
Form the second electrode lay 16 at nanoparticle layer 15;
Form backboard 17 at the second electrode lay 16.
Wherein, nanoparticle layer 15 can utilize common steaming technique (co-evaporation techniques) to form.At least a in the mixture (MO3:Ag), titanium oxide (TiO2), zinc oxide that the material of nanoparticle layer 15 comprises molybdenum oxide and silver and the silver-colored mixture (ZnO:Ag).
The present invention also provides another kind of manufacture method, i.e. substrate configuration, and it comprises:
Form backboard 17 at substrate 30;
Form the second electrode lay 16 at backboard 17;
Form photoelectric conversion layer 13 at nanoparticle layer 15;
Form first electrode layer 11 at photoelectric conversion layer 13.
Formed structure as shown in Figure 2.Wherein, different with the substrate 10 of front structure, the substrate 30 here can be opaque structure.Basic identical in its backboard 17, the second electrode lay 16, nanoparticle layer 15, photoelectric conversion layer 13, first electrode layer 11 and the front structure, thereby do not elaborate here.
Embodiment 2
Fig. 3 is the sectional view of second embodiment of the invention solar battery structure.Solar cell as shown in Figure 3 comprises:
Transparency carrier 20;
First electrode layer 21;
Be positioned at the photoelectric conversion layer 23 on first electrode layer 21;
Be positioned at the nanoparticle layer 25 on the photoelectric conversion layer 23;
Be positioned at the second electrode lay 26 on the nanoparticle layer 25;
Be positioned at another nanoparticle layer 27 on the second electrode lay 26;
Be positioned at the backboard 28 on the nanoparticle layer.
Wherein, transparency carrier 20 is glass.First electrode layer 21 is for being plated in transparent conductive oxide on glass (Transparent Conductive Oxide) film.Can comprise suitable materials such as tin oxide, zinc oxide, its combination of tin indium oxide in the transparent conductive oxide film, also can comprise other doping composition.For example, when the transparent conductive oxide film is zinc oxide, can be in zinc oxide compositions such as adulterated al, gallium, boron.In forming process, the surface of transparent conductive oxide film can form matte, as shown in Figure 3.
Photoelectric conversion layer 23 is P-I-N type three-decker, photoelectric conversion layer 23 materials are amorphous silicon (amorphous silicon in the present embodiment, a-Si:H), comprise P type amorphous silicon (amorphous silicon, a-Si:H) layer, I type amorphous silicon (Intrinsical amorphous silicon) layer, N-type amorphous silicon layer, wherein, P type amorphous silicon layer is near first electrode layer 21.In the present embodiment, select amorphous silicon as photoelectric conversion layer, be that mainly its cost of manufacture is low, be suitable for being applied to large-scale production.In other embodiments, the material of photoelectric conversion layer also can be selected from by microcrystal silicon, monocrystalline silicon, polysilicon, amorphous SiC, amorphous SiN, amorphous SiGe, amorphous SiSn, GaAs, AlGaAs, InP, GaP, CIGS, CdTe, Cu
2In the set that S, ZnTe, PbS, CIS, GaSb form any one.
As nanostructure (nanostructure), nanoparticle layer 25,27 is in forming process, and the surface nature can form uneven structure as shown in Figure 3.In the specific implementation, at least a in nanoparticle layer 25,27 the material mixture (MO3:Ag), titanium oxide (TiO2), zinc oxide that can comprise molybdenum oxide and silver and the silver-colored mixture (ZnO:Ag).Nanoparticle layer 25,27 can be used common steaming technique (co-evaportion techniques) and form.
The second electrode lay 26 also is transparent conductive oxide (Transparent Conductive Oxide) film.Can comprise suitable materials such as tin oxide, zinc oxide, tin indium oxide and combination thereof in the transparent conductive oxide film, also can comprise other doping composition.For example, when the transparent conductive oxide film is zinc oxide, can be in zinc oxide compositions such as adulterated al, gallium, boron.Wherein, the second electrode lay 26 and first electrode layer 21 can be jointly as the syndeton that realizes electrically connecting between a plurality of solar cells (such as, series connection).
The material of backboard 28 can include but not limited to Al, Ag, Ti, Cr, Au, Cu, Pt and alloy thereof or combination.
Owing to set up nanoparticle layer 25,27 at the shady face of photoelectric conversion layer 23, nanoparticle layer 25,27 has good dispersion effect, itself and backboard 28 match with first electrode layer 21 in photoelectric conversion layer 23 the place aheads jointly, improve light and penetrated number of times in the photoelectric conversion layer 23, thereby increased captive probability, be conducive to improve photoelectric conversion efficiency.
The present invention also provides a kind of manufacture method of above-mentioned solar cell, i.e. superstrate configuration, and it comprises:
Form first electrode layer 21 at transparency carrier 20;
Form photoelectric conversion layer 23 at first electrode layer 21;
Form nanoparticle layer 25 at photoelectric conversion layer 23;
Form the second electrode lay 26 at nanoparticle layer 25;
Form another nanoparticle layer 27 at the second electrode lay 26;
Form backboard 28 at nanoparticle layer 27.
Wherein, nanoparticle layer 25,27 can utilize common steaming technique (co-evaporation techniques) to form.At least a in the mixture (MO3:Ag), titanium oxide (TiO2), zinc oxide that nanoparticle layer 25,27 material comprise molybdenum oxide and silver and the silver-colored mixture (ZnO:Ag).
The present invention also provides another kind of manufacture method, i.e. substrate configuration, and it comprises:
Form backboard 28 at substrate 40;
Nanoparticle layer 27 on backboard 28;
Form the second electrode lay 26 at nanoparticle layer 27;
Form another nanoparticle layer 25 at the second electrode lay 26;
Form photoelectric conversion layer 23 at nanoparticle layer 25;
Form first electrode layer 21 at photoelectric conversion layer 23.
Formed structure as shown in Figure 4.Wherein, different with the substrate 20 in the front structure, the substrate 40 here can be opaque structure.Its backboard 28, nanoparticle layer 27, the second electrode lay 26, nanoparticle layer 25, photoelectric conversion layer 23, first electrode layer 21 all with front structure in basic identical, thereby do not elaborate here.
Nanoparticle layer 25,27 can utilize common steaming technique (co-evaporation techniques) to form.At least a in the mixture (MO3:Ag), titanium oxide (TiO2), zinc oxide that nanoparticle layer 25,27 material comprise molybdenum oxide and silver and the silver-colored mixture (ZnO:Ag).
Need to prove, though the embodiment that the present invention provides is the individual layer solar cell, but for the tandem solar cells that is formed by two or more solar cell stack, its each sub-battery also can select to use the structure that provides above, equally also can produce corresponding technique effect.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (9)
1. a solar cell is characterized in that, comprising:
Transparency carrier;
Be formed at first on the described transparency carrier, the transparent electrode layer;
Be formed at the photoelectric conversion layer on described first electrode layer;
Be formed at the nanoparticle layer on the described photoelectric conversion layer;
Be formed at the second electrode lay on the described nanoparticle layer; And
Be formed at the backboard on the described the second electrode lay;
Wherein, the material of described nanoparticle layer comprises the mixture of molybdenum oxide and silver, the mixture of zinc oxide and silver, and at least a in the titanium oxide.
2. solar cell as claimed in claim 1 is characterized in that, also is formed with described nanoparticle layer between described the second electrode lay and the described backboard.
3. solar cell as claimed in claim 1 is characterized in that, described nanoparticle layer is formed on the described photoelectric conversion layer by steaming altogether.
4. solar cell as claimed in claim 1 is characterized in that, is formed with diffuse reflector between described nanoparticle layer and the described the second electrode lay.
5. solar cell as claimed in claim 4 is characterized in that, described diffuse reflector is the paper tinsel of reflection or diffused light.
6. solar cell as claimed in claim 4 is characterized in that, the material of described diffuse reflector is polyvinyl butyral resin.
7. solar cell as claimed in claim 1, it is characterized in that the material of described photoelectric conversion layer is selected from by amorphous silicon, microcrystal silicon, monocrystalline silicon, polysilicon, amorphous SiC, amorphous SiN, amorphous SiGe, amorphous SiSn, GaAs, AlGaAs, InP, GaP, CIGS, CdTe, Cu
2In the set that S, ZnTe, PbS, CIS, GaSb form any one.
8. solar cell as claimed in claim 7 is characterized in that, the material of described photoelectric conversion layer is amorphous silicon or amorphous silicon-crystalline/micro-crystalline silicon laminated.
9. solar cell as claimed in claim 1 is characterized in that, described transparency carrier is glass.
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| CN2012100348044A CN103258870A (en) | 2012-02-16 | 2012-02-16 | Solar cell |
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| CN2012100348044A CN103258870A (en) | 2012-02-16 | 2012-02-16 | Solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2706586A1 (en) * | 2012-09-10 | 2014-03-12 | Samsung Electronics Co., Ltd | Light transmissive electrode, organic photoelectric device, and image sensor |
| CN107564972A (en) * | 2016-06-28 | 2018-01-09 | 湖南国盛石墨科技有限公司 | A kind of graphene solar panel |
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| CN102077367A (en) * | 2008-07-03 | 2011-05-25 | Imec公司 | Multi-junction photovoltaic module and the processing thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2706586A1 (en) * | 2012-09-10 | 2014-03-12 | Samsung Electronics Co., Ltd | Light transmissive electrode, organic photoelectric device, and image sensor |
| US9379343B2 (en) | 2012-09-10 | 2016-06-28 | Samsung Electronics Co., Ltd. | Light transmissive electrode, organic photoelectric device, and image sensor |
| CN107564972A (en) * | 2016-06-28 | 2018-01-09 | 湖南国盛石墨科技有限公司 | A kind of graphene solar panel |
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Application publication date: 20130821 |