CN204651337U - Hybrid solar cell - Google Patents
Hybrid solar cell Download PDFInfo
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- CN204651337U CN204651337U CN201390000632.7U CN201390000632U CN204651337U CN 204651337 U CN204651337 U CN 204651337U CN 201390000632 U CN201390000632 U CN 201390000632U CN 204651337 U CN204651337 U CN 204651337U
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- 238000002161 passivation Methods 0.000 claims abstract description 95
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 44
- 239000002800 charge carrier Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 34
- 238000005245 sintering Methods 0.000 claims description 22
- 238000007650 screen-printing Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 62
- 230000008569 process Effects 0.000 description 36
- 238000000151 deposition Methods 0.000 description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 description 22
- 230000008021 deposition Effects 0.000 description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000012864 cross contamination Methods 0.000 description 15
- 238000001465 metallisation Methods 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 238000000427 thin-film deposition Methods 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000010561 standard procedure Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
Provide hybrid solar cell, comprising: the absorbed layer producing excessive charge charge carrier; Homojunction contact site, it is formed on the first side of absorbed layer; Passivation layer, it is formed on second side relative with the first side of absorbed layer; And doping heterojunction portion, on its second side being formed in absorbed layer on passivation layer, passivation layer comprises one or more contact site opening, and heterojunction portion of adulterating comprises the doping hetero junction layer be deposited on passivation layer, doping hetero junction layer comprises the one or more heterojunction protuberance contacts portions formed in one or more contact site opening respectively, and the percentage of the whole surf zone on the surf zone in heterojunction protuberance contacts portion on the surface of passivation absorbed layer and the surface of passivation absorbed layer is 3% to 20%.
Description
Technical field
The utility model relates to hybrid solar cell and manufacture method thereof, more specifically, relates to mixing homojunction/heterojunction solar battery (that is, having homojunction and heterojunction portion).
Background technology
Fig. 1 illustrates traditional industrial silicon disk solar cell 100.Usually, p-type silicon (Si) disk 102 is used.By having the front side Zone Full diffusion p/n of point (or line) Metal contacts 106
+homojunction 104 (emitter layer for minority carrier is collected), and the rear side Zone Full diffusion p/p with Zone Full Al Metal contacts 110
+homojunction 108 (back surface electric field (BSF) layer for minority carrier is collected), thus realize excessive charge carrier separation.By silicon nitride (SiN
x) passivation layer 112 that forms is deposited on the diffused homojunction 104 of front side.Such as, front side p/n
+diffused homojunction 104 can be the crystalline silicon (c-Si (n of Ph-diffusion of phosphorus diffusion
+)), and rear side p/p
+diffused homojunction 108 can be the crystalline silicon (c-Si (p of Al-diffusion of aluminium diffusion
+)).Front side homojunction 104 is formed each via high-temperature hot diffusion process contacts sintering with high temperature with rear side homojunction 108.In order to effectively collect the minority carrier (electronics) produced, emitter (that is, p/n knot) 104 is arranged on the front side of solar cell 100.
In order to improve battery efficiency, general recommendations uses N-shaped Si disk.Therefore, it is possible to avoid the light induced (due to metastable boron-oxygen compound) observed in p-type Cz silicon, and higher open circuit voltage can be reached.This is because in c-Si, electron capture coefficient is usually above hole capture coefficient, and therefore N-shaped c-Si has lower minority carrier recombination rate.By convention, for the solar cell of front contact, usually there are two kinds of technology of raising the efficiency.Fig. 2 A and Fig. 2 B illustrates the first technology, and it relates to the homojunction solar cell 200,220 with front diffused homojunction and rear diffused homojunction, and this front diffused homojunction and rear diffused homojunction have point (or line) Metal contacts 204.Fig. 2 A illustrates that Zone Full diffused homojunction 202, Fig. 2 B with point (or line) Metal contacts 204 illustrates the regional area diffused homojunction 222 with point (or line) Metal contacts 204.Fig. 2 C illustrates the second technology, it relates to the heterojunction solar battery 240 with forward and backward Zone Full deposition both heterojunction 242, and this forward and backward Zone Full deposition heterojunction 242 has Zone Full " metal " contact site 244 be made up of transparent conductive oxide (TCO).
If (namely use has the rear diffused homojunction in metal dots/linear contact lay portion 204, traditional homojunction mode), then usual by providing the electric insulation passivation layer 224 that can comprise a large amount of interface charge to realize surface passivation, this interface charge strengthens surface passivation (field effect passivation).Due to silicon nitride SiN
xa large amount of interfaces positive charge, therefore typically use silicon nitride SiN
x.In this electric insulation passivation layer 224, form little opening, be formed in this little opening to make Metal contacts 204.By the diffused homojunction contact site of two types, namely, use Zone Full diffusion 202 (see Fig. 2 A) being carried out localized contact by metal dots/linear contact lay portion 204, or be used in regional area diffusion 222 (see Fig. 2 B) under metal dots/linear contact lay portion 204.A kind of rear method increases the open circuit voltage electromotive force of solar cell 220, less source region (recombination active regions) is compounded with this is because exist in disk, but must with grown/deposited and composition (pattern) diffusion mask is cost.
If use rear film deposition Zone Full heterojunction 242 (that is, traditional heterojunction mode) with Zone Full TCO contact site 244, then usual by providing conductive film hetero junction layer to realize surface passivation.This is ultrathin membrane (<10nm) intrinsic hydrogenated amorphous silicon typically, a-Si:H (i), amorphous silicon hydride ((a-Si:H (p that is that it is adulterated by film (<30nm) p or n doping
+) or a-Si:H (n
+)) cover with the emitter and back surface field (BSF) region that form solar cell 240 further.In order to form Zone Full contact site, thin-film transparent conductive oxide (TCO) layer 244 is applied on membrane silicon layer.This TCO ensures lateral conductivity rate and as effective back reflector.Metal contacts 204 is formed on TCO to extract electric current.
But although these two kinds of methods are successful, it all has shortcoming.Such as, due to following reason, traditional diffused homojunction silicon wafer solar cell stands lower open circuit (V
oc) electromotive force, (i) diffusion zone in disk, it is also the region strengthening compound, and (ii) height contact compound, this is because the direct contact solar cell absorber of Metal contacts.In addition, exist about boron p
+the technology barrier of diffusion.There is some problem in boron diffusion, comprise relatively low output, very high heat balance (>1000 DEG C) and the huge maintenance requirement (removing boron powder) to pipeline, and boron diffusion is relatively unstable process.On the contrary, thin film deposition hetero-junction silicon disk solar cell is proved the highest V of realization
ocvalue.But especially, tco layer needs to ensure good lateral electrical conductivity and good back-side rate, this needs other process (namely sputtering) and therefore significantly increases cost.In addition, due to the parasitic absorption in TCO, and need the low temperature compatibility screen-printing paste of conversion, be therefore difficult to former side contacts portion and in the hetero-junction silicon solar cell of feature, realize high short-circuit current density (J
sc) and fill factor, curve factor (FF).
On the other hand, normal industry process is used above-mentioned two kinds of methods (homojunction solar battery structure and heterojunction solar battery structure) to be combined and will suffer from serious defect.This is because be not process compatible in principle for the standard procedure that homojunction contact site is formed and heterojunction portion is formed.The homojunction contact site of standard forms (use screen printing) needs high temperature process steps (at the temperature of >=800 DEG C (T) contact sintering) to ensure the low resistance ohmic contact of metal grill to silicon wafer.On the contrary, because under high-temperature, hydrogen starts thin layer of overflowing, therefore thin film deposition hetero junction layer can not stand the temperature higher than 350 DEG C, this relevant to the remarkable reduction of surface passivation (cause the remarkable decline of open circuit voltage and therefore cause solar battery efficiency to decline).Therefore, the high temperature requirement formed the homojunction contact site of the screen printing of standard needs to complete diffused homojunction contact site completely before deposit film hetero junction layer.But this will transfer to produce following problems, and namely metallized layer must enter plasma enhanced chemical vapor deposition (PECVD) chamber for film heterojunction layer deposition.This requires incompatible with the high surface passivation of film PECVD layer deposition process again, because the metal cross-contamination in PECVD process will destroy the high-quality surface passivation of intrinsic amorphous silicon, this intrinsic amorphous silicon is commonly used for resilient coating to ensure the highest surface passivation (again cause the remarkable decline of open circuit voltage and therefore cause solar battery efficiency to decline).In addition, because a-Si:H/ Metal contacts is bad backside reflector, therefore use the Zone Full of direct contact heterojunction layer to metallize and cannot omit rear side TCO contact site.Therefore, there is no available industrial feasible mixing (homojunction/heterojunction) solar battery structure at present, the advantage that heterojunction portion can be formed by this hybrid solar cell (namely, higher open circuit voltage, without boron diffusion) advantage (that is, also therefore having higher short circuit current without TCO contact site) that formed with homojunction contact site combines.
For this background, develop the utility model.
Utility model content
Provide hybrid solar cell, it comprises: the absorbed layer producing excessive charge charge carrier, and described excessive charge charge carrier has the contrary polarity of light incident on the first side with described absorbed layer, homojunction contact site, to extract the excessive charge charge carrier of the first polarity produced on its described first side being formed in described absorbed layer, passivation layer, it is formed on the second side of described absorbed layer, described second side is relative with described first side, and the surface charge that described passivation layer presents positive polarity or negative polarity is in electric charge carrier accumulated state or electric charge carrier inverted status to make described second side of described absorbed layer, and doping heterojunction portion, on its described second side being formed in described absorbed layer on described passivation layer to extract the excessive charge charge carrier of the second polarity produced, described second polarity is contrary with described first polarity, and described doping heterojunction portion has the described opposite polarity polarity with the described surface charge of described passivation layer, wherein said passivation layer comprises one or more contact site opening, and described doping heterojunction portion comprises the doping hetero junction layer be deposited on described passivation layer, described doping hetero junction layer comprises the one or more heterojunction protuberance contacts portions formed in described one or more contact site opening respectively, and the shape in wherein said heterojunction protuberance contacts portion is point-like, striated or latticed, and the percentage of the whole surf zone on the described surface of absorbed layer is 3% to 20% described in the surf zone in the described heterojunction protuberance contacts portion on the surface of absorbed layer described in passivation and passivation.
In some embodiment of described hybrid solar cell, described homojunction contact site comprises: by the diffusion zone formed in described first side that dopant diffused to described absorbed layer, and via screen printing with subsequently contact sintering and the first contact site of being formed on described diffusion zone, described first contact site is made up of metal or the stacking of transparent conductive oxide/metal.
In some embodiment of described hybrid solar cell, described passivation layer is made up of the silicon nitride for positive surface charge or the aluminum oxide for negative surface charge.
In some embodiment of described hybrid solar cell, described hetero junction layer comprises the stacking one or more thin layers formed by the stacking or intrinsic hydrogenated amorphous silicon oxide/doping microcrystalline hydrogenated silicon of stacking, the intrinsic hydrogenated amorphous silicon oxide/doped hydrogenated amorphous silicon of doped hydrogenated amorphous silicon, doping microcrystalline hydrogenated silicon, intrinsic hydrogenated amorphous silicon/doped hydrogenated amorphous silicon.
Accompanying drawing explanation
According to specification hereafter, by means of only example mode and by reference to the accompanying drawings, those skilled in the art will be better appreciated by execution mode of the present utility model and can become apparent, wherein,
Fig. 1 illustrates a traditional homojunction solar cell;
Fig. 2 A illustrates another traditional homojunction solar cell;
Fig. 2 B illustrates another traditional homojunction solar cell;
Fig. 2 C illustrates traditional heterojunction solar battery;
Fig. 3 A illustrates the mixing homojunction/heterojunction solar battery according to an illustrative embodiments of the present utility model;
Fig. 3 B illustrates the mixing homojunction/heterojunction solar battery according to another illustrative embodiments of the present utility model;
Fig. 3 C illustrates the mixing homojunction/heterojunction solar battery according to another illustrative embodiments of the present utility model;
Fig. 4 illustrates the manufacture method of the mixing homojunction/heterojunction solar battery according to an execution mode of the present utility model;
Fig. 5 A to Fig. 5 D illustrates the preliminary step of the manufacture method of the hybrid solar cell according to an execution mode of the present utility model;
Fig. 5 E to Fig. 5 H illustrates the subsequent step of the method can allowing metal cross-contamination; And
Fig. 6 A to Fig. 6 D illustrates the subsequent step of the method can allowing short time high temperature process.
Embodiment
Execution mode of the present utility model attempts the efficient mixing homojunction/heterojunction solar battery providing industry feasible, first side (such as front side) of this hybrid solar cell has homojunction contact site and the second relative side (such as rear side) has heterojunction portion.In the exemplary embodiment, hybrid solar cell is included in the diffused homojunction contact site structure on the front side of solar cell, and the thin film deposition heterojunction cage structure on the rear side of solar cell, thus by comprise one or more heterojunction protuberance contacts portion (such as, point-like contacts portion, striated or wire-shaped contact portion or latticed contact site) heterojunction portion but not by Zone Full heterojunction portion realize heterojunction excessive charge charge carrier extract.
Use the heterojunction protuberance contacts portion according to illustrative embodiments, by electric insulation passivation layer is used for surface passivation, the electronics of direct generation in solar cell absorber or the charge carrier separation in hole, this presents a large amount of positive charge (such as silicon nitride, SiN
x) or surface negative charge (such as aluminum oxide, AlO
x), thus make the surface of silicon wafer be in strong inverted status or be in strong accumulated state.Afterwards, by one or more local openings of passivation layer and subsequently by the Zone Full deposition of (or multiple) conductive film hetero junction layer on passivation layer top, in one or more local openings, form heterojunction protuberance contacts portion thus, thus realize electric charge carrier extraction.The Effective Doping of these film heterojunction layers is contrary with the polarity of the surface charge of passivation layer, can extract collected excessive charge charge carrier.Owing to not having diffusion zone to be formed under Metal contacts, therefore use heterojunction protuberance contacts portion, solar cell can be made to realize higher open circuit voltage due to compound (bulk recombination) in the contact that reduces and body.
In the exemplary embodiment, (Zone Full or local) diffused homojunction contact site that the heterojunction protuberance contacts portion extracted by the excessive charge charge carrier of the type be used on rear side of solar cell (i.e. electronics or hole) and the excessive charge charge carrier for the another kind of type (i.e. hole or electronics) on front side of solar cell extract combines.This hybrid solar cell structure produces following advantages:
(1) the high short circuit electromotive force I of diffused homojunction solar cell can be developed
sc.
(2) the high open circuit potential I of heterojunction solar battery can be developed
oc.
(3) phosphorus diffusion (it is firm in solar cell industry and the good process set up) can be used in diffused homojunction contact configuration, thus keep the advantage of " gettering ", simultaneously by using p doping film deposition hetero junction layer to omit problematic nitrogen diffusion (it is the relatively unstable process steps with very narrow process window) as an alternative.
(4) use can be avoided to sputter (or costliness) including transparent conducting oxide layer, thus reduce the quantity of process steps.
(5) device of the current use of major part at place of photovoltaic cell manufacturer can be retained in, still develop advantage heterojunction being used for the formation of solar cell contact site simultaneously and (that is, realize high V
oc).
As described in the background art, the standard procedure (requiring high temperature to form the ohmic contact of Metal And Silicon via screen printing) formed for homojunction contact site and (require low temperature for the standard procedure that the heterojunction portion of touching is formed, i.e. temperature <350 DEG C, to avoid hydrogen overflow and therefore avoid de-ization of surface passivation) not process compatible in principle.The high temperature requirement needs formed for the typographic homojunction contact site of Standard screen complete diffused homojunction contact site completely by implementing high temperature contact sintering (> 800 DEG C) before deposit film hetero junction layer.But this can transfer to produce following temperature, that is, metal layer must enter plasma enhanced chemical vapor deposition (PECVD) chamber for film heterojunction layer deposition.This requires incompatible with the high surface passivation of film PECVD layer deposition process again, because the metal cross-contamination in PECVD process will destroy the high-quality surface passivation of intrinsic amorphous silicon, this intrinsic amorphous silicon is usually used in resilient coating to ensure the highest surface passivation.
By using heterojunction protuberance contacts portion (such as, point-like contacts portion, striated or wire-shaped contact portion or latticed contact site), unconventional plane or Zone Full heterojunction portion 242 (going out as shown in Figure 2 C) solve the problems referred to above in execution mode trial of the present utility model.This is formed advantageously allowing homojunction and heterojunction portion in the mode that industry is feasible, by this way, ensure the high temperature requirement needed for contact sintering that (1) is traditional and heterojunction portion formed process compatibility (namely can allow short time high temperature process) between required low temperature requirements or (2) front contact site metallization step and via such as PECVD hetero junction layer deposition step between process compatibility (namely can allow metal cross-contamination).
Heterojunction protuberance contacts portion is used to replace Zone Full contact site to reduce the contact area on hetero junction layer and disk (wafer) (i.e. absorber) surface significantly.In a preferred embodiment, contact area percentage is approximately 3% to 20%.More preferably, if use microcrystal silicon μ c-Si:H as thin film deposition hetero junction layer, then contact area percentage is approximately 4% to 6%, if or use amorphous silicon as thin film deposition hetero junction layer, then contact area percentage is approximately 10% to 15%.Therefore, according to illustrative embodiments, when most disk rear surface is by insulating passivation layer (the such as SiN with high positive surface charge or high negative surface charge
xor AlO
x) passivation time, the slightly poor surface passivation quality of disk can be accepted.Such as, in embodiments, by the heterojunction protuberance contacts portion extracted for electric charge carrier only passivation disk rear surface 3% to 20%.
The said method can allowing short time high temperature process is further described by according to the first execution mode of the present utility model.In the method, for diffused homojunction contact site formed required high temperature contact sintering step by carrying out after the deposition of film heterojunction layer (due to metal deposition with contact sintering and will implement after hetero junction layer deposition, therefore during via such as PECVD deposition hetero junction layer, avoiding metal cross-contamination).High-temperature process in contact sintering process only will not reduce the surface passivation quality of disk outside these parts in the part (that is, having towards the surface in the heterojunction protuberance contacts portion of disk) of having a common boundary with hetero junction layer.This is because insulating passivation layer (such as SiN
xor AlO
x) be configured to withstand high temperature contact sintering.Therefore, generally speaking, this is reduce allowably by causing the surface passivation of disk, because it is limited in the disk part with the interface surfaces in heterojunction protuberance contacts portion.In some embodiments, this advantageously allow heterojunction portion's forming process (a) to omit intrinsic amorphous silicon buffer layer deposition and/or (b) deposition of microcrystalline silicon layer but not deposition of amorphous silicon layers as doping film layer.Both process (a) and (b) all cause the surface recombination of enhancing (this is unacceptable when Zone Full heterojunction portion, but is acceptable when heterojunction protuberance contacts portion).After the short time high temperature process needed for contact sintering, both surface recombination of process (a) and (b) will have the substantially identical order of magnitude.But process (a) needs less process steps, and process (b) can realize higher doping efficiency for doping film layer, this then cause the lower series resistance of solar cell.
The said method can allowing metal cross-contamination is further described by according to the second execution mode of the present utility model.In the method, first complete diffused homojunction contact site and formed (comprising contact sintering), any harmful high-temperature process can not be faced to make hetero junction layer.On the contrary, because the metallization homojunction contact site completed also must enter in PECVD deposition process, therefore hetero junction layer will face metal cross-contamination in PECVD deposition process.But, by forming heterojunction protuberance contacts portion, for reason same as described above, this metal cross-contamination (it also causes the reduction of surface passivation) can be allowed.That is, insulating passivation layer (such as SiN
xor AlO
x) most of disk can be protected to avoid metal cross-contamination, the part (namely towards the surface in the heterojunction protuberance contacts portion of disk) only having disk and hetero junction layer to have a common boundary will be vulnerable to the impact of metal cross-contamination.
For explanation and clearly object, Fig. 3 A with reference to an illustrative embodiments of the present utility model describes mixing homojunction/heterojunction solar battery 300.
In this illustrative embodiments, hybrid solar cell 300 comprises silicon wafer or substrate 302 (namely for generation of the absorbed layer of excessive charge charge carrier, this excessive charge charge carrier has the polarity contrary with light incident on the front side 304 of this absorbed layer); Homojunction contact site 306, it is formed on first side (such as front side) 304 of disk 302, for extracting the excessive charge charge carrier (such as electronics or hole) of the first produced polarity; With heterojunction portion 308, it is formed on second side (such as rear side) 310 of disk 302, for extracting the excessive charge charge carrier (such as hole or electronics) of the second produced polarity.Hybrid solar cell 300 also comprises passivation layer 312, and it is formed on the rear side 310 of disk 302, has one or more contact site opening 314.Passivation layer 312 presents the surface charge of positive polarity or negative polarity, and this surface charge makes the rear side 310 of disk 302 be in electric charge carrier accumulated state or electric charge carrier inverted status.Heterojunction portion 308 is included in the doping hetero junction layer 315 of deposition on passivation layer 312, and this hetero junction layer 315 also fills contact site opening 314.Therefore, the hetero junction layer 315 that adulterates comprises the one or more heterojunction protuberance contacts portions 316 formed in above-mentioned one or more contact site opening 314 respectively.
Disk 302 can be N-shaped or p-type crystalline silicon (c-Si).If use N-shaped c-Si disk 302, then the emitter of solar cell will be preferably placed at rear side 310 (collections of rear side minority carrier) phosphorus can be spread for the formation of diffusion contacts.If use p-type c-Si disk 302, then the emitter of solar cell will be preferably placed at front side 304 (collections of front side minority carrier) phosphorus can be spread for the formation of diffusion contacts.Homojunction contact site 306 is preferably phosphorus Zone Full diffused homojunction (thus avoiding problematic boron diffusion process) as shown in Figure 3A, or the homojunction (provide local diffusion region owing to contacting sintering process, therefore avoided any extra diffusion process) spread in aluminium partly as shown in Fig. 3 B with Fig. 3 C.Passivation layer 312 is the electric insulation passivation layers for surface passivation, and it presents a large amount of positive surface charge or a large amount of negative surface charges, thus makes the rear surface of disk 302 be in strong inverted status or strong accumulated state.Also have another passivation layer 317, it is deposited on homojunction contact site 306.Such as, whether according to expecting to make the front/rear surface of disk 302 to be in strong inverted status or strong accumulated state, post passivation layer 312 can by silicon nitride (SiN
x) to make and front passivation layer 318 can by aluminum oxide (AlO
x) make, vice versa.
Hetero junction layer 315 comprises stacking, the intrinsic hydrogenated amorphous silicon oxide (a-SiO by doped hydrogenated amorphous silicon (a-Si:H), doping microcrystalline hydrogenated silicon (μ c-Si:H), intrinsic a-Si:H/ doping a-Si:H
x: H)/doping a-Si:H stacking or intrinsic a-SiO
x: one or more thin layers of the stacking formation of H/ doping μ c-Si:H.The polarity of doping a-Si:H or μ c-Si:H is contrary with the polarity of the surface charge of post passivation layer 312, to support the extraction of electrons.Such as, if post passivation layer 312 has positive surface charge, then a-Si:H or μ c-Si:H is n doping (extraction of electronics).
As shown in Figure 3A, most disk 302 rear surface is by post passivation layer 312 passivation, and it is such as opened partly with point-like/wire/grid-like fashion.This allows hetero junction layer 315 to form heterojunction protuberance contacts portion 316 in the contact site opening 314 of post passivation layer 312.Therefore, hetero junction layer 315 only has fraction/minority part (namely heterojunction protuberance contacts portion 316 is towards the surface of disk 302) will to contact with disk 302 and under being exposed to above-mentioned unexpected process condition.Such as; as described above; hetero junction layer 315 only has the surf zone of about 3% to 20% to form heterojunction portion (namely in the surf zone of disk 302; 3% to 30% of disk rear surface be used to electric charge carrier extract needed for the portion's passivation of heterojunction protuberance contacts), remaining surf zone is under post passivation layer 312 and protected by post passivation layer 312.Therefore, compared with Zone Full heterojunction portion, after high-temperature process or after the deposition of experience metal cross-contamination, the slightly poor surface passivation quality of absorbed layer 302 is permissible.
Use hybrid solar cell 300 as shown in Figure 3A, diffused homojunction contact site 306 is placed on the front side 304 of disk 302, owing to not having front side TCO to absorb, therefore advantageously allows higher short circuit current (I
sc).According to illustrative embodiments, further this high short circuit current electromotive force of front side diffused homojunction contact site 306 is combined with the high open circuit voltage electromotive force in rear side heterojunction portion 308, thus realize that there is high short circuit electromotive force I
scwith high open circuit potential V
octhe hybrid solar cell 300 of advantage.In addition, illustrative embodiments avoids problematic boron to spread by phosphorus diffusion is used for frontside contacts portion, and that is, diffusion frontside contacts portion will be N-shaped (electron extraction) contact site.
Fig. 3 B illustrates the schematic diagram of hybrid solar cell 320, and except diffused homojunction contact site 322 is regional area diffusion but not Zone Full spreads, this hybrid solar cell 320 has the structure identical with the hybrid solar cell 300 shown in Fig. 3 A.In addition, because in the aluminium of the local during contact sintering, diffusion is used for forming regional area diffusion zone 322 in disk 302, therefore this illustrative embodiments avoids any clear and definite diffusion process step.That is, spreading frontside contacts portion will be p-type (hole extraction) contact site.In figure 3b, unless otherwise noted, the features/components identical with the features/components in the hybrid solar cell 300 of Fig. 3 A is represented by identical Reference numeral, and identical structure and identical function can be had.
Fig. 3 C illustrates the schematic diagram of hybrid solar cell 340, and except back side metallization, this hybrid solar cell 340 has the structure identical with the hybrid solar cell 320 shown in Fig. 3 B.In fig. 3 c, back side metallization realizes with the form of metal grill 342, but not Zone Full Metal contacts 319 as shown in Figure 3 B.In fig. 3 c, unless otherwise noted, the features/components identical with the features/components in the hybrid solar cell 320 of Fig. 3 B is represented by identical Reference numeral, and identical structure and identical function can be had.
The method 400 of the manufacture hybrid solar cell 300,320,340 of illustrative embodiments of the present utility model is described with reference to Fig. 4.Method 400 comprises the step 402 providing the absorbed layer 302 producing excessive charge charge carrier, and this excessive charge charge carrier has the polarity that upper incident light is contrary with first side (such as, front side) of absorbed layer 302; First side of absorbed layer 302 is formed the step 404 of the homojunction contact site 306 of the excessive charge charge carrier extracting the first polarity produced; In the second side of absorbed layer (such as, rear side) the upper step 406 forming passivation layer, second side is relative with the first side, and the surface charge that passivation layer presents positive polarity or negative polarity is in electric charge carrier accumulation or electric charge carrier inverted status to make the second side of absorbed layer; And on the second side of absorbed layer 302, on passivation layer 312, form the step 408 in the doping heterojunction portion 308 extracting the excessive charge charge carrier of the second polarity produced, second polarity is contrary with the first polarity, and heterojunction portion of adulterating has the opposite polarity polarity with the surface charge of passivation layer.According to this illustrative embodiments, the step 408 forming doping heterojunction portion 308 is included in passivation layer 312 and forms one or more contact site opening 314, and on passivation layer 312 dopant deposition hetero junction layer 315, this doping hetero junction layer 315 comprise respectively in above-mentioned one or more contact site opening 314 formed one or more heterojunction protuberance contacts portions 316.
For explanation and clearly object, according to illustrative embodiments of the present utility model, the method 400 of manufacture hybrid solar cell 300 is described in further detail with reference to figure 5A to 5H and Fig. 6 A to 6D.But can be not limited to step described below by understanding method 400, in addition, unless be separately specifically noted, otherwise this step can realize with the order different from described order.In Fig. 5 A to 5H and Fig. 6 A to 6D, unless otherwise noted, the features/components identical with the features/components in the hybrid solar cell 300 of Fig. 3 A is represented by identical Reference numeral, and identical structure and identical function can be had.
In this illustrative embodiments, as shown in Figure 5A, first N-shaped crystalline silicon disk (c-Si) 302 is provided.Subsequently, as shown in Figure 5 B, spread by phosphorus and form Zone Full diffused homojunction 306 on disk 302.Passivation layer 317 before Fig. 5 C illustrates and uses plasma enhanced chemical vapor deposition (PECVD) process to deposit on diffused homojunction 306.Fig. 5 D illustrates the post passivation layer 312 of deposition on the rear side 310 of disk 302.In this exemplary embodiment, front passivation layer 317 is the SiN for making the front surface of disk 302 be in accumulated state (supporting the extraction of electronics)
x, and post passivation layer 312 is the AlO for making the rear surface of disk 302 be in inverted status (supporting the extraction in hole)
x.For post passivation layer 312, should understand and can use SiN
x/ AlO
xstacking and be still referred to as AlO
xpassivation layer.
Thereafter, can allow that other said process of metal cross-contamination carry out method 400 according to what select or take the said process can allowing short time high temperature process of the first execution mode or the second execution mode.
Fig. 5 E to 5H illustrates the situation of the method for employing second execution mode.In Fig. 5 E, use screen printing to carry out front side metallization to form Metal contacts 318 on the front side 304 of disk 302, carry out high temperature contact sintering (about more than 800 DEG C, continue to be less than 1 minute) afterwards.Afterwards, as illustrated in figure 5f, in post passivation layer 312, contact site hole 314 is formed by such as laser opening.Subsequently, in order to form heterojunction protuberance contacts portion 316, on the Zone Full of post passivation layer 312, depositing p doping hetero junction layer 315 via PECVD, as illustrated in fig. 5h, thus extracting for hole.In some embodiments, p doping hetero junction layer 315 can be the thin layer of following form, and namely intrinsic a-Si:H/p doping a-Si:H's is stacking, or intrinsic a-SiO
x: H/p doping a-Si:H's is stacking, or intrinsic a-SiO
x: H/p doping μ c-Si:H's is stacking, or is the individual layer of p doping a-Si:H or p doping μ c-Si:H.As illustrated in fig. 5h, use screen printing to carry out back side metallization to form Metal contacts 319 on the rear side 310 of disk 302, carry out low temperature contact sintering (about 350 DEG C or lower) afterwards.Such as, rear Metal contacts 319 can be the stacking of metal or TCO/ metal.In this embodiment, before the deposition of hetero junction layer 315, front side metallization is carried out.Therefore, because formed front side metal contact portion must be placed within PECVD reactor, therefore this execution mode bears the metal cross-contamination between thin film silicon PECVD depositional stage on the surface in heterojunction protuberance contacts portion 316.This is admissible, is only limited in towards on the surface in the heterojunction protuberance contacts portion 316 of disk 302 because the expection of surface passivation reduces, and this has significantly less region compared with the Zone Full heterojunction portion such as shown in Fig. 2 C.
Fig. 6 A to 6D illustrates the situation of the method for employing first execution mode.In fig. 6, in post passivation layer 312, contact site hole 314 is formed by such as laser opening.Subsequently, in order to form heterojunction protuberance contacts portion 316, on the Zone Full of post passivation layer 408, deposit p doping hetero junction layer 315, as shown in Figure 6B.Afterwards, as shown in Figure 6 C, use screen printing to carry out front side metallization to form Metal contacts 318 on the front side 304 of disk 302, carry out high temperature contact sintering (about more than 800 DEG C) subsequently afterwards.That is, after depositing hetero junction layer 315 via PECVD, front side metallization is carried out.In figure 6d, use screen printing to carry out back side metallization to form Metal contacts 319, carry out low temperature contact sintering (about less than 350 DEG C) subsequently afterwards.Such as, rear Metal contacts 319 can be the stacking of metal or TCO/ metal.Therefore, this execution mode avoids metal cross-contamination by depositing hetero junction layer 315 before front contact site metallization.The expection reduction of the surface passivation of the hetero junction layer 315 caused by the high-temperature process during contact sintering is only limited in towards the surface in the heterojunction protuberance contacts portion 316 of disk 302, so can allow, this has significantly less region compared with Zone Full heterojunction portion.
In the first embodiment, both front side metal contact portion 318 and backside metal contact portion 319 also can be formed in a high temperature process steps (at the temperature of about more than 800 DEG C co-sintering), thus allow the degradation of heterojunction protuberance contacts portion towards the heterojunction passivation quality in the region of disk 302 due to this high-temperature process.Less be compounded with source region owing to existing below contact site, more effectively suppress and if use hetero junction layer then to contact composite quilt, therefore the method still thinks that the traditional homojunction contact site be better than as shown in Figure 2 A and 2 B is formed.
Therefore, the high efficiency hybrid solar cell that execution mode of the present utility model provides industry feasible, the side (such as front side) of this hybrid solar cell has homojunction contact site and have heterojunction portion on opposition side (such as rear side).Particularly, the advantage of diffused homojunction solar cell (high short circuit current electromotive force) can combine with the advantage (high open circuit voltage electromotive force) of thin film deposition heterojunction solar battery by the hybrid solar cell according to illustrative embodiments of the present utility model, is allowed for tradition (high temperature) screen printing that front contact site is formed simultaneously.That is, can ensure forming the process compatibility between the conventional high-temperature requirement of (contact sintering) with the low temperature requirements formed for traditional heterojunction portion for homojunction contact site, or can ensure that contact site metallization and film PECVD heterojunction deposit the process compatibility between (needing to avoid metal cross-contamination) before completing.In addition, preferred embodiment make use of the firm phosphorus diffusing step for the formation of diffused homojunction, this is avoided the problematic boron diffusing step formed for traditional homojunction contact site.This advantageously increases bulk lifetime (bulk lifetime) (" gettering ") of disk.In addition, the preferred embodiment any tco layer forming the normal costliness needed in Zone Full heterojunction portion of non-essential needs.This is because post passivation layer as effective back reflector, can be applied directly on thin film deposition hetero junction layer to enable metal level.Because silicon/Metal contacts is bad optical back reflections device, if therefore use Zone Full heterojunction back contacts portion to replace, then do not belong to above-mentioned situation.
Contrary with using traditional Zone Full heterojunction portion, because contact site region (between heterojunction protuberance contacts portion and disk surfaces) and the percentage in the whole region of passivation disk surfaces are only about 3% to 20%, if such as microcrystal silicon μ c-Si:H is used as thin film deposition hetero junction layer, then this percentage is about 4% to 6%, if or use amorphous silicon a-Si:H, then this percentage is about 10% to 15%, therefore without the need to ensureing the perfect interface passivation with heterojunction portion 316.As described above, slightly high Interface composites in that region can be allowed, to ensure above-mentioned process compatibility.Therefore, amorphous silicon a-Si:H can also be replaced to realize doping hetero junction layer by using microcrystal silicon μ c-Si:H, thus accept poor passivation quality but the substitute is to realize higher doping efficiency, to realize the lower series resistance of solar cell (if use Zone Full heterojunction portion, then due to poor passivation quality, μ c-Si:H can not be used).The deposition of the film intrinsic amorphous buffer layer before doped layer deposition can also be omitted in, to make process steps minimum (if use Zone Full heterojunction portion, then cannot realize this situation).
Advantageously allow according to the hybrid solar cell mentioned above of execution mode of the present utility model the process units being preserved for the current use of major part that standard solar cells is produced, that is, can insulating barrier (SiN be passed through
xor AlO
x) still apply the diffusion of traditional phosphorus and contact sintering with traditional.This can manufacture hybrid solar cell in the mode that industry is feasible.On the contrary, basic need is comprised the new test manufacture line of low temperature metalization by pure heterojunction solar battery (that is, front heterojunction portion and rear heterojunction portion).In this case, photovoltaic manufacturer must replace their most of existing apparatus.
Have realized that heterojunction protuberance contacts portion can realize the open circuit potential (V more increased compared with traditional Zone Full heterojunction portion in principle
oc).This is because except except heterojunction protuberance contacts portion, the active film heterojunction layer of high compound and disk decoupling zero.
One skilled in the art will understand that when not deviating from the scope of the present utility model briefly described, various distortion and/or amendment can be made to the utility model illustrated in a specific embodiment.Therefore, the execution mode of this paper is considered to be exemplary and nonrestrictive in all respects.
Claims (4)
1. hybrid solar cell, is characterized in that, comprising:
Produce the absorbed layer of excessive charge charge carrier, described excessive charge charge carrier has the contrary polarity of light incident on the first side with described absorbed layer;
Homojunction contact site, to extract the excessive charge charge carrier of the first polarity produced on its described first side being formed in described absorbed layer;
Passivation layer, it is formed on the second side of described absorbed layer, described second side is relative with described first side, and the surface charge that described passivation layer presents positive polarity or negative polarity is in electric charge carrier accumulated state or electric charge carrier inverted status to make described second side of described absorbed layer; And
Doping heterojunction portion, on its described second side being formed in described absorbed layer on described passivation layer to extract the excessive charge charge carrier of the second polarity produced, described second polarity is contrary with described first polarity, and described doping heterojunction portion has the described opposite polarity polarity with the described surface charge of described passivation layer
Wherein said passivation layer comprises one or more contact site opening, and described doping heterojunction portion comprises the doping hetero junction layer be deposited on described passivation layer, described doping hetero junction layer comprises the one or more heterojunction protuberance contacts portions formed in described one or more contact site opening respectively, and
The shape in wherein said heterojunction protuberance contacts portion is point-like, striated or latticed, and described in the surf zone in the described heterojunction protuberance contacts portion on the surface of absorbed layer described in passivation and passivation, the percentage of the whole surf zone on the described surface of absorbed layer is 3% to 20%.
2. hybrid solar cell as claimed in claim 1, it is characterized in that, described homojunction contact site comprises: by the diffusion zone formed in the first side of dopant being diffused to described absorbed layer, and via screen printing with subsequently contact sintering and the first contact site of being formed on described diffusion zone, described first contact site is made up of metal or the stacking of transparent conductive oxide/metal.
3. hybrid solar cell as claimed in claim 1 or 2, it is characterized in that, described passivation layer is made up of the silicon nitride for positive surface charge or the aluminum oxide for negative surface charge.
4. hybrid solar cell as claimed in claim 1 or 2, it is characterized in that, described hetero junction layer comprises the stacking one or more thin layers formed by the stacking or intrinsic hydrogenated amorphous silicon oxide/doping microcrystalline hydrogenated silicon of stacking, the intrinsic hydrogenated amorphous silicon oxide/doped hydrogenated amorphous silicon of doped hydrogenated amorphous silicon, doping microcrystalline hydrogenated silicon, intrinsic hydrogenated amorphous silicon/doped hydrogenated amorphous silicon.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261652379P | 2012-05-29 | 2012-05-29 | |
| US61/652,379 | 2012-05-29 | ||
| PCT/SG2013/000216 WO2013180653A1 (en) | 2012-05-29 | 2013-05-29 | Hybrid solar cell and method of fabricating thereof |
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| Publication Number | Publication Date |
|---|---|
| CN204651337U true CN204651337U (en) | 2015-09-16 |
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|---|---|
| CN (1) | CN204651337U (en) |
| DE (1) | DE212013000122U1 (en) |
| WO (1) | WO2013180653A1 (en) |
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| CN111509074A (en) * | 2020-04-29 | 2020-08-07 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| CN113644002A (en) * | 2021-08-10 | 2021-11-12 | 上海交通大学 | Method for testing solar cell minority carrier terminal contact resistance |
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| CN104393066B (en) * | 2014-11-28 | 2016-09-07 | 常州天合光能有限公司 | Solar cell device architecture with point cantact structure and preparation method thereof |
| TW201806174A (en) * | 2016-07-12 | 2018-02-16 | 阿波朗索拉爾公司 | A method for manufacturing a photovoltaic device |
| NL2019634B1 (en) * | 2017-09-27 | 2019-04-03 | Univ Delft Tech | Solar cells with transparent contacts based on poly-silicon-oxide |
| CN115000243B (en) * | 2022-05-27 | 2023-11-21 | 中国科学院电工研究所 | Preparation method of crystalline silicon heterojunction solar cell |
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| FR2880989B1 (en) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND INTERDIGITAL STRUCTURE |
| US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
-
2013
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509074A (en) * | 2020-04-29 | 2020-08-07 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| CN111509074B (en) * | 2020-04-29 | 2022-03-25 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| CN113644002A (en) * | 2021-08-10 | 2021-11-12 | 上海交通大学 | Method for testing solar cell minority carrier terminal contact resistance |
| CN113644002B (en) * | 2021-08-10 | 2023-12-05 | 上海交通大学 | Method for testing minority carrier end contact resistance of solar cell |
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| DE212013000122U1 (en) | 2015-03-10 |
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