CN101859067A - 放射线敏感性树脂组合物、层间绝缘膜及其形成方法 - Google Patents

放射线敏感性树脂组合物、层间绝缘膜及其形成方法 Download PDF

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Publication number
CN101859067A
CN101859067A CN201010147524A CN201010147524A CN101859067A CN 101859067 A CN101859067 A CN 101859067A CN 201010147524 A CN201010147524 A CN 201010147524A CN 201010147524 A CN201010147524 A CN 201010147524A CN 101859067 A CN101859067 A CN 101859067A
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CN
China
Prior art keywords
compound
composition
radiation sensitive
resin composition
sensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201010147524A
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English (en)
Chinese (zh)
Inventor
西信弘
米田英司
饭田雅史
丸山拓之
滨田谦一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2010031492A external-priority patent/JP5585112B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Publication of CN101859067A publication Critical patent/CN101859067A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
CN201010147524A 2009-04-01 2010-03-31 放射线敏感性树脂组合物、层间绝缘膜及其形成方法 Pending CN101859067A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2009089624 2009-04-01
JP2009-089624 2009-04-01
JP2010013224 2010-01-25
JP2010-013224 2010-01-25
JP2010-031492 2010-02-16
JP2010031492A JP5585112B2 (ja) 2009-04-01 2010-02-16 感放射線性樹脂組成物、層間絶縁膜及びその形成方法

Publications (1)

Publication Number Publication Date
CN101859067A true CN101859067A (zh) 2010-10-13

Family

ID=42945045

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010147524A Pending CN101859067A (zh) 2009-04-01 2010-03-31 放射线敏感性树脂组合物、层间绝缘膜及其形成方法

Country Status (2)

Country Link
KR (1) KR101682937B1 (ko)
CN (1) CN101859067A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5736718B2 (ja) * 2010-10-18 2015-06-17 Jsr株式会社 感放射線性樹脂組成物、硬化膜及びその形成方法
JP5510347B2 (ja) * 2011-01-26 2014-06-04 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP6552346B2 (ja) 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1971420A (zh) * 2006-11-28 2007-05-30 京东方科技集团股份有限公司 液晶显示器用彩色滤光片的红色光阻组合物及其应用
JP2008077067A (ja) * 2006-08-24 2008-04-03 Jsr Corp 感光性樹脂組成物、表示パネル用スペーサーおよび表示パネル
WO2008088160A1 (en) * 2007-01-15 2008-07-24 Lg Chem, Ltd. New polymer resin compounds and photoresist composition including new polymer resin compounds
CN101359174A (zh) * 2007-07-30 2009-02-04 Jsr株式会社 放射线敏感性树脂组合物、以及层间绝缘膜和微透镜及它们的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3965868B2 (ja) 2000-06-12 2007-08-29 Ｊｓｒ株式会社 層間絶縁膜およびマイクロレンズ
JP2007131658A (ja) * 2005-11-08 2007-05-31 Mitsubishi Rayon Co Ltd 樹脂組成物、硬化物、カラーフィルター、スペーサー、ｔｆｔ素子平坦化膜、および液晶表示装置
JP4892698B2 (ja) * 2006-01-18 2012-03-07 Ｊｓｒ株式会社 新規樹脂及びそれを用いた感放射線性樹脂組成物
JP5212596B2 (ja) 2006-05-24 2013-06-19 日産化学工業株式会社 有機トランジスタ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008077067A (ja) * 2006-08-24 2008-04-03 Jsr Corp 感光性樹脂組成物、表示パネル用スペーサーおよび表示パネル
CN1971420A (zh) * 2006-11-28 2007-05-30 京东方科技集团股份有限公司 液晶显示器用彩色滤光片的红色光阻组合物及其应用
WO2008088160A1 (en) * 2007-01-15 2008-07-24 Lg Chem, Ltd. New polymer resin compounds and photoresist composition including new polymer resin compounds
CN101359174A (zh) * 2007-07-30 2009-02-04 Jsr株式会社 放射线敏感性树脂组合物、以及层间绝缘膜和微透镜及它们的制备方法

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Publication number Publication date
KR101682937B1 (ko) 2016-12-06
KR20100109848A (ko) 2010-10-11

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Application publication date: 20101013