CN101840895A - 一种高散热球型阵列封装结构 - Google Patents

一种高散热球型阵列封装结构 Download PDF

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CN101840895A
CN101840895A CN201010163371A CN201010163371A CN101840895A CN 101840895 A CN101840895 A CN 101840895A CN 201010163371 A CN201010163371 A CN 201010163371A CN 201010163371 A CN201010163371 A CN 201010163371A CN 101840895 A CN101840895 A CN 101840895A
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吴晓纯
陶玉娟
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Nantong Fujitsu Microelectronics Co Ltd
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Abstract

本发明涉及一种高散热球型阵列封装结构，包括芯片、金属引线、粘结材料、基板、塑封料和焊球，该封装结构中还包括弹簧散热器；芯片通过粘结材料置于基板上，并通过金属引线实现与基板之间的电互联；塑封料塑封弹簧散热器、芯片、金属引线、粘结材料、和基板，形成塑封体，弹簧散热器周围被塑封料固定，其一端与芯片相连，另一端裸露于塑封体表面，将芯片的热量散出塑封体外，解决了一些没有外露金属载板的封装散热难题，大大提高了产品的电热性能和可靠性。

Description

一种高散热球型阵列封装结构
技术领域
本发明涉及半导体封装技术领域的散热结构，特别是涉及一种高散热球型阵列封装结构。
背景技术
传统的半导体倒装焊封装结构大多通过基板来散热，主要会存在以下不足：
1、随着半导体技术的不断发展，以塑料基板材质为芯片承载底板的中高阶封装越来越多，特别是球型阵列封装多采用基板材质，但由于塑料基板本身的导热性能较差，散热效果不佳。
2、采用金属线实现电互联的封装结构，多通过高分子环氧树脂材料将芯片粘结在承载板上，树脂本身的散热效果较差，芯片主要透过树脂中添加的金属颗粒进行热传导，为了达到更好的散热效果而选用金属颗粒所占比例较高的合成树脂，造成树脂比例的相对下降，降低了其与芯片、承载板之间的粘结力，进而出现因粘结力不强、金属颗粒高比例带来的高应力残留而导致的分层等可靠性问题。
3、受本身的封装结构限制而散热不佳的半导体封装，也有采用高导热塑封料的方式来提高散热效果，但高导热塑封料除了本身高昂的成本价格外，对产品塑封工艺的控制也提出了更高的要求，且散热效果不明显。
发明内容
本发明所要解决的技术问题是提供一种高散热球型阵列封装结构，使得半导体封装散热结构的散热性强、结构简单、散热空间利用率高、适用性强。
本发明解决其技术问题所采用的技术方案是：提供一种高散热球型阵列封装结构，包括芯片、金属引线、粘结材料、基板、塑封料和焊球，所述的封装结构中还包括弹簧散热器；所述的芯片通过粘结材料置于所述的基板上，并通过所述的金属引线实现与所述的基板之间的电互联；所述的塑封料塑封所述的弹簧散热器、芯片、金属引线、粘结材料、被动元件和基板，形成塑封体；所述的弹簧散热器周围被所述的塑封料固定，其一端与所述的芯片相连，另一端裸露于所述的塑封体表面；所述的基板下方植有所述的焊球。
所述的高散热球型阵列封装结构的弹簧散热器裸露于所述的塑封体表面的一端焊有外接散热装置。
所述的高散热球型阵列封装结构的基板上贴有被动元件；所述的被动元件为电阻、或电容、或电感、或晶振。
所述的高散热球型阵列封装结构的弹簧散热器为柔性结构或弹性结构。
所述的高散热球型阵列封装结构的弹簧散热器根据所述的芯片的尺寸和散热需求来改变与芯片相连端的接触面积和接触形状。
所述的高散热球型阵列封装结构的粘结材料为导电胶、不导电胶或粘结膜。
所述的高散热球型阵列封装结构的金属引线为金线、或铜线、或铝线、或合金线。
所述的高散热球型阵列封装结构的焊球为锡球、或铜柱、或金凸点、或合金凸块。有益效果
由于采用了上述的技术方案，本发明与现有技术相比，具有以下的优点和积极效果：
1、内置弹簧散热器，大大增加了芯片的散热面积，使芯片由原来靠一面与承载底座相连的散热结构变成靠承载底座与弹簧散热器同时散热的芯片双面散热结构。
2、解决了一些没有外露金属载板的封装散热难题，大大提高了产品的电热性能和可靠性。
3、封装体内置弹簧散热器的结构使封装体在原有的空间内实现了很好的散热效果，满足了半导体封装轻薄短小的趋势要求。
4、弹簧散热器的弹簧伸缩特性，使其在不同封装厚度的产品中具备了一定的通用性，适用性的提高也降低了弹簧散热器的开模成本。
5、弹簧散热器本身的柔性结构使其在高度空间上具有很强的灵活性，和传统非可压缩性金属块或金属片散热结构相比，弹簧的柔性结构不会因封装各环节中的高度公差而造成对芯片的压伤，弹簧良好的应力吸收功能更有利于产品可靠性的提高。
6、在弹簧散热器裸露于塑封体的一端加焊大型外接散热装置，满足了大功率产品的超高散热要求。
7、在封装结构中加入被动元件，封装结构更为紧凑，具有封装密度高的系统集成优点。
附图说明
图1是本发明高散热球型阵列封装结构的剖面图；
图2是本发明高散热球型阵列封装结构中弹簧散热器的示意图；
图3是本发明高散热球型阵列封装结构的底部示意图；
图4是本发明高散热球型阵列封装结构中焊有外接散热装置的产品示意图；
图5是本发明高散热球型阵列封装结构中贴有被动元件的产品示意图；
图6是本发明高散热球型阵列封装结构中贴有被动元件并焊有外接散热装置的产品示意图。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
本发明的实施方式涉及一种高散热倒装焊球型阵列封装结构，如图1所示，包括芯片2、金属引线3、粘结材料4、基板5、塑封料6和焊球7，所述的封装结构中还包括弹簧散热器1；所述的芯片2通过粘结材料4置于所述的基板5上，并通过所述的金属引线3实现与基板5之间的电互联，其中，金属引线3可以是金线、或铜线、或铝线、或合金线；所述的粘结材料4为导电胶、不导电胶或粘结膜；所述的塑封料6塑封所述的弹簧散热器1、芯片2、金属引线3、粘结材料4和基板5，形成塑封体，所述的弹簧散热器1周围被所述的塑封料6固定，其一端与所述的芯片2相连，另一端裸露于所述的塑封体表面，如图1所示，弹簧散热器1的下表面粘在芯片2上，其上表面裸露于塑封体表面，以便将芯片2的热量散出塑封体外；所述的基板5下方植有所述的焊球7，其中，焊球7以矩阵形式排列，如图3所示，焊球7可以是锡球、铜柱、金凸点或合金凸块。
图2所示的是弹簧散热器1的结构示意图，可以根据实际使用时的情况选用各种不同形状、面积和体积的弹簧散热器，即根据具体的产品需要来确定弹簧散热器采用螺旋线形式的弹性结构，还是采用折叠式的弹性结构，或是采用Z字的上升结构，根据芯片的尺寸和散热需求来改变弹簧散热器与芯片的接触面积和接触形状以及弹簧散热器的高度和层数。由于弹簧散热器本身的弹簧伸缩特性，使其在不同封装厚度的产品中具备了一定的通用性，适用性的提高从而降低了弹簧散热器的开模成本；同时，弹簧本身的柔性结构使其在高度空间上具有很强的灵活性，和传统非可压缩性金属块或金属片散热结构相比，不会因封装各环节中的高度公差而造成对芯片的压伤，弹簧良好的应力吸收功能有利于产品可靠性的提高。
在弹簧散热器1裸露于所述的塑封体表面的一端还可以加焊外接散热装置8，如图4所示，由于在弹簧散热器1的上表面焊有外接散热装置8，因此可以满足大功率产品的超高散热要求。在所述的基板5上还可以贴有被动元件9，如图5所示，所述的被动元件9为电阻、或电容、或电感、或晶振，由于在封装结构中加有被动元件9，使得封装结构更为紧凑，具有封装密度高的系统集成优点。本发明可以在弹簧散热器1裸露于所述的塑封体表面的一端加焊外接散热装置8的同时，并在所述的基板5上贴有被动元件9，同时满足超高散热和系统集成的封装需求，如图6所示。
不难发现，本发明采用内置弹簧散热器，大大增加了芯片的散热面积，使芯片由原来仅仅靠一面与承载底座相连来散热的方式变成同时依靠承载底座与弹簧散热器进行双面散热的方式，从而解决了一些没有外露金属载板的封装散热难题，大大提高了产品的电热性能和可靠性；另外，封装体内置弹簧散热器的结构使封装体在原有的空间内实现了很好的散热效果，满足了半导体封装轻薄短小的趋势要求。

Claims (8)

1.一种高散热球型阵列封装结构，包括芯片(2)、金属引线(3)、粘结材料(4)、基板(5)、塑封料(6)和焊球(7)，其特征在于，所述的封装结构中还包括弹簧散热器(1)；所述的芯片(2)通过粘结材料(4)置于所述的基板(5)上，并通过所述的金属引线(3)实现与所述的基板(5)之间的电互联；所述的塑封料(6)塑封所述的弹簧散热器(1)、芯片(2)、金属引线(3)、粘结材料(4)和基板(5)，形成塑封体；所述的弹簧散热器(1)周围被所述的塑封料(6)固定，其一端与所述的芯片(2)相连，另一端裸露于所述的塑封体表面；所述的基板(5)下方植有所述的焊球(7)。
2.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的弹簧散热器(1)裸露于所述的塑封体表面的一端焊有外接散热装置(8)。
3.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的基板(5)上贴有被动元件(9)；所述的被动元件(9)为电阻、或电容、或电感、或晶振。
4.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的弹簧散热器(1)为柔性结构或弹性结构。
5.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的弹簧散热器(1)根据所述的芯片(2)的尺寸和散热需求来改变与芯片(2)相连端的接触面积和接触形状。
6.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的粘结材料(4)为导电胶、不导电胶或粘结膜。
7.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的金属引线(3)为金线、铜线、铝线、或合金线。
8.根据权利要求1所述的高散热球型阵列封装结构，其特征在于，所述的焊球(7)为锡球、或铜柱、或金凸点、或合金凸块。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347293A (zh) * 2011-09-30 2012-02-08 常熟市广大电器有限公司 一种散热性能优良的芯片封装结构
CN103745957A (zh) * 2013-11-06 2014-04-23 华天科技（西安）有限公司 一种增强散热功能的aaqfn封装件及其制作工艺
CN108615772A (zh) * 2018-05-17 2018-10-02 中国科学院微电子研究所 传感器的封装结构与其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19925983A1 (de) * 1999-06-08 2000-12-14 Bosch Gmbh Robert Vorrichtung zur Ableitung von Verlustwärme
CN1372317A (zh) * 2002-03-11 2002-10-02 威盛电子股份有限公司 芯片散热封装结构及其制造方法
CN2567778Y (zh) * 2002-06-18 2003-08-20 矽品精密工业股份有限公司 具有散热结构的半导体封装件
CN201673899U (zh) * 2010-04-29 2010-12-15 南通富士通微电子股份有限公司 一种高散热球型阵列封装结构

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19925983A1 (de) * 1999-06-08 2000-12-14 Bosch Gmbh Robert Vorrichtung zur Ableitung von Verlustwärme
CN1372317A (zh) * 2002-03-11 2002-10-02 威盛电子股份有限公司 芯片散热封装结构及其制造方法
CN2567778Y (zh) * 2002-06-18 2003-08-20 矽品精密工业股份有限公司 具有散热结构的半导体封装件
CN201673899U (zh) * 2010-04-29 2010-12-15 南通富士通微电子股份有限公司 一种高散热球型阵列封装结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347293A (zh) * 2011-09-30 2012-02-08 常熟市广大电器有限公司 一种散热性能优良的芯片封装结构
CN103745957A (zh) * 2013-11-06 2014-04-23 华天科技（西安）有限公司 一种增强散热功能的aaqfn封装件及其制作工艺
CN108615772A (zh) * 2018-05-17 2018-10-02 中国科学院微电子研究所 传感器的封装结构与其制作方法
CN108615772B (zh) * 2018-05-17 2020-05-12 中国科学院微电子研究所 传感器的封装结构与其制作方法

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