CN2567778Y - 具有散热结构的半导体封装件 - Google Patents

具有散热结构的半导体封装件 Download PDF

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CN2567778Y
CN2567778Y CN 02238730 CN02238730U CN2567778Y CN 2567778 Y CN2567778 Y CN 2567778Y CN 02238730 CN02238730 CN 02238730 CN 02238730 U CN02238730 U CN 02238730U CN 2567778 Y CN2567778 Y CN 2567778Y
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semiconductor package
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黄建屏
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Siliconware Precision Industries Co Ltd
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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Abstract

一种散热结构的半导体封装件，它由一载有半导体芯片及多数金线的基板与该基板上的散热结构所构成，其中，该散热结构具有一片体及位于其边缘用于支撑该片体，使之位于芯片上方的若干个支撑部，该支撑部的成形位置乃对应于该基板上非导电器件布设的区域，因此可明显缩减自该支撑部底部延伸用来供基板相接的接触部面积，而腾出更大基板空间提供金线或安装其它被动器件；此外，该片体与基板间因高度差而形成的间隔也可令相邻支撑部之间保有一可供金线穿越的空隙，使金线可以布设在该散热结构外部的焊线垫焊接，因此该散热结构的增设不会对金线布线或被动器件布局构成阻碍。

Description

具有散热结构的半导体封装件
技术领域
本实用新型是关于一种半导体封装件，特别是指一种具有散热结构的半导体封装件。
球栅阵列(BGA)半导体封装件(Ball Grid Array SemiconductorPackage)因能提供充足数量的输入/输出连结端(I/O Connection)，符合高密度电子器件及电子电路的半导体芯片的需求，现已逐渐成为封装产品的主流。然而，半导体芯片上布设的电子器件及电子电路越密集，芯片运作时产生的热量就越高，若不及时将芯片表面的热量快速释除，积存的热量会严重影响半导体芯片的电性功能与产品的稳定。另一方面，为避免封装件内部电路受到外界水、尘的污染，半导体芯片表面必须外覆一封装胶体予以保护内部电路，但构成该封装胶体的封装树脂却是一热传导性甚差的材质，其导热系数仅0.8w/m°K。因此，芯片电路表面产生的热量无法有效的通过封装胶体传递到外部，而往往导致大量的热量积存在芯片内部，使芯片性能及使用寿命备受考验。
为解决现有球栅阵列半导体封装件在散热性能上的不足，因此该BGA半导体封装件中装设散热件的结构应运而生。这种将散热件包覆于封装胶体中的散热方式虽有助于提升封装产品的散热效率，但由于封装体的散热不好，仍有大部分热量聚集在芯片内部，因此这种半导体封装件的整体散热效率仍难达到令人满意的程度。
针对上述散热件所存在的缺点，美国专利第5,977,626号案发明了一种将散热件直接粘接到芯片表面的半导体封装件。如附图5所示，这种半导体封装件3的散热件33是由一顶面330a外露出封装胶体34的平坦部330以及架撑该平坦部330使之位于半导体芯片31上方的若干个支撑部331，以及自该支撑部331底部延伸以供若干个用于嵌接基板30的凸出部337连接的多数接触部332所构成；其中，该支撑部331是环置于该平坦部330外围并逐渐向下，外伸至该接触部332以构成一容纳多数主/被动器件(如芯片、焊线、电容器等)的槽形空间38，并于该平坦部330底面330b相对于该芯片31作用表面310处形成一厚部336，使芯片31运作产生的热能可借由该厚部336迅速传递到平坦部330顶面330a而释放至大气中，故该种半导体封装件3的确具有优良的散热效率。
但是，随着芯片集成化的提高以及芯片级封装(Chip ScalePackage，CSP)型态的高度发展，使基板大小逐渐要求接近芯片尺寸(Near chip size)，若从基板尺寸缩减以及焊线布设密集度增加这两方面考虑，势必要在有限的基板面积内腾出更多的空间提供器件的整合。如附图6所示，为配合散热件33上该凸出部337的形成，该接触部332往往必须保留一定面积(如图中斜线部位)以利该凸出部337冲压制作，且还需顾及散热件33材料的伸长，亦无法将该凸出部337朝外安置以缩减该接触部332面积，散热件33接触部332占据基板较大空间会使该基板上可供焊线垫(Fingers)配置的焊线布线区域(未图标)相对减少，同时被动器件的布局亦备受限制。
另外，由于基板周围区域(未图标)被该接触部332占据，封装件内所有主动/被动器件仅能安置在该支撑部331与平坦部330构成的槽形空间38内，因此该接触部332若不能缩减其占用的基板面积，相对于基板上提供器件安置的空间将更显不足，因此这种散热件33已无法适用大尺寸芯片封装件等高度集成化的封装型态。
发明内容
本实用新型的主要目的是提供一种具散热结构的半导体封装件，其中，该散热结构不会阻碍金线布线或被动器件安置，并借散热结构上该支撑部向外推置以缩减散热结构在基板上占据的空间，能容纳更多的主动/被动器件而使封装件更符合芯片高度集成化的封装趋势。
基于上述及其它目的，本实用新型具备散热结构的半导体封装件是包含一基板；至少一半导体芯片，是接置于该基板上并借多数导电器件(如金线)与该基板间形成电性导接关系；以及一散热结构(如内嵌式散热件)，其具有一片体(如散热件平坦部)及成形于该片体边缘处以架撑该片体使之位于芯片上方的若干个支撑部，其中，该支撑部的成形位置是对应至该基板上非导电器件布设的区域，且任两相邻支撑部间是保有一提供该导电器件穿越的空间，以借该支撑部底部延伸的接触部将该散热结构定位接合至该基板的非导电器件布设区域上，同时，于该支撑部上至少另开一个孔以供包覆该芯片的融熔封装树脂通过。
本实用新型封装件的散热结构是摒除接触部上增设凸出部方式，直接借助该接触部将散热结构粘贴固定于基板上，遂该散热结构制作时可缩减该接触部面积以便外推该支撑部到散热结构最边缘的角端位置上而使该散热结构仅需占用最小的基板面积，借以换取更大空间提供焊线布线及器件安置之用。此外，相较于传统环设于片体周围形成如围墙般的支撑部型态，本实用新型半导体封装件采用互为独立的若干个支撑部共同架撑一片体，使相邻支撑部间会因该片体与基板间形成的高度差而产生一空隙以利金线穿越，故提供金线导电焊结的焊线垫(Fingers)可超出该散热结构尺寸而布设于基板上任何位置，大幅提升金线布线与器件安置的灵活程度。
附图说明
以下以较佳实施例，并配合附图进一步详述本实用新型的特点及功效：
附图1A是附图3半导体封装件的剖面线1A-1A的剖面示意图；
附图1B是附图3半导体封装件的剖面线1B-1B的剖面示意图；
附图2是本实用新型半导体封装件中该散热结构的上视图及其局部放大图；
附图3是本实用新型半导体封装件第一实施例的上视透视图；
附图4是本实用新型半导体封装件第二实施例的剖面示意图；
附图5是美国专利第5,977,626号案的半导体封装件的剖面示意图；以及
附图6是附图5的半导体封装件中该散热结构的上视示意图。
具体实施方式
实施例1
附图1A及附图1B所表示的是本实用新型半导体封装件1的剖视图。该半导体封装件1是包括有一基板10，一粘贴于该基板10上的芯片11，多数用以电性连接该基板10与芯片11的金线12，一接置于该基板10上的散热片13，若干个安置于该基板10上的被动器件17，一用以包覆该芯片11、金线12、被动器件17及部分散热片13的封装胶体14，以及多数植接于该基板10底面101上的焊球15。
请参阅附图1，该基板10具有一布设有多数导电迹线(未图标)的顶面100以及一布设有多数导电迹线(未图标)的底面101，其开设有多个导电穿孔(Vias)(属已知内容，未图标)以令该顶面100上的导电迹线与底面101上的导电迹线电性连接，其中，该基板10顶面100上该等导电迹线(未图标)始端是连接有若干个焊线垫102(Fingers)以供金线12焊接之用。而该等被动器件17是包含如电感器、电容器或电阻器等，借若干个焊垫(未图标)植设于该基板10顶面100上以调节封装件1运作时的电性功能。该焊球15即是植接于底面101上的导电迹线终端以供该芯片11与基板10电性连接，该芯片11借助该焊球15与如印刷电路板的外界装置(未图标)执行电性导接。制作该基板10的材质一般为环氧树脂、聚亚醯胺树脂、三氮杂苯树脂等材料，亦或陶瓷材料、玻璃材料等，其中又以BT(Bismaleimide Triazine)树脂较宜。
该芯片11则具有一布设有多数电子器件及电子电路的作用表面110及一相对的非作用表面111，借助一如银胶的胶黏剂16(或聚亚醯胺胶片)粘接至该基板10的顶面100上。
该散热件13是本实用新型的特征结构，属于一内嵌式散热件(Embedded Heat Sink)。如附图2所示，其包含一平坦部130及用以架撑该平坦部130使之位于芯片上方的若干个支撑部131所构成，其中，该平坦部130具有一外露出该封装胶体(未图标)的顶面130a及一相对底面130b，并该支撑部131是位于该散热件13最外侧的角端位置上，且该支撑部131底部是一体延伸出得与该基板(未图标)定位粘接的接触部132，该接触部可呈一方形、三角形或半圆形等不同形态。各支撑部131与其它支撑部131间并未连接，任两相邻支撑部131间的平坦部130与基板(如图中假想线位置)相隔有一空间133；并且该支撑部131上亦开设有至少一孔洞134以供一构成封装胶体的封装树脂(未图标)通过，借此增加模压后该散热件13与封装胶体(如附图1中14所示)间的接合强度使封胶可靠性明显提升。
由于本实用新型的半导体封装件中，散热件13是借该接触部132直接黏合于基板上，因此该接触部132大小无须特别予以限制而能将该支撑部131外推至散热件13最外侧角端位置，避免支撑部131的设置占据基板13空间而保留更大焊线布线面积(较现有结构的布线面积扩大39％)。另外，如附图3所示，因不同角端位置的支撑部131彼此并未连接，使得相邻支撑部131间的平坦部130与基板10存有一高度差造成的空隙(未图标)，因此连接芯片11的多数金线12可穿越该空隙而与散热件13外部的基板10焊线垫102焊接，致使该等金线12以及被动器件17可自由布设于该散热件13内外部的基板上，该散热件13尺寸或安置位置不会对焊线布线或被动器件布局构成任何阻碍。
实施例2
此外，本实用新型半导体封装件亦具有另一实施例。如附图4所示，该实施例2大致结构是与前述实施例1相同，仅于该平坦部230顶面230a上另形成有至少一个阶梯状凹部235，使流经该部的树脂利于吸热以阻绝溢胶产生而使封装产品具有较佳的外观品质。另外，为缩短芯片21作用表面210与散热件23平坦部230间的传热路径，亦可于该平坦部230底面230b相对于芯片21处一体连设有朝该芯片21方向伸展的厚部236，以减少该芯片21作用表面210与散热件23间的距离令封装件整体散热效率更加提升。

Claims (11)

1.一种具散热结构的半导体封装件，其特征在于，该具有散热结构的半导体封装件包括：
一基板；
至少一半导体芯片，是接置于该基板上并借多数导电器件与该基板形成电性导接；
一散热结构，其具有一片体及成形于该片体边缘处以架撑该片体使之位于该芯片上方的若干个支撑部，其中，该支撑部的成形位置是对应至该基板上非导电器件布设的区域，且任两相邻支撑部间是保有一提供该导电器件穿越的空间，以借该支撑部底部延伸的接触部将该散热结构定位接合至该基板的非导电器件布设区域上；以及
一封装胶体，是形成于该基板上用以包覆该半导体芯片。
2.如权利要求1所述的半导体封装件，其特征在于，该散热结构是为一内嵌式散热件。
3.如权利要求1所述的半导体封装件，其特征在于，该导电器件是为一金线。
4.如权利要求1所述的半导体封装件，其特征在于，该片体是具有一顶面及一相对底面，其中，该顶面是外露出该封装胶体外。
5.如权利要求1或4所述的半导体封装件，其特征在于，该片体底面相对于该芯片上方是形成有一朝该芯片伸展的厚部。
6.如权利要求1或4所述的半导体封装件，其特征在于，该片体顶面上是形成有至少一阶梯状凹部。
7.如权利要求1所述的半导体封装件，其特征在于，该支撑部还是开设有至少一孔洞以供形成该封装胶体的融熔封装树脂通过。
8.如权利要求1所述的半导体封装件，其特征在于，该接触部是呈一三角形者。
9.如权利要求1所述的半导体封装件，其特征在于，该接触部是呈一方形者。
10.如权利要求1所述的半导体封装件，其特征在于，该接触部是呈一半圆形者。
11.如权利要求1所述的半导体封装件，其特征在于，相邻该支撑部间的空间是由该片体与基板间隔的高度差所构成者。
CN 02238730 2002-06-18 2002-06-18 具有散热结构的半导体封装件 Expired - Lifetime CN2567778Y (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1319163C (zh) * 2003-08-29 2007-05-30 矽品精密工业股份有限公司 具有散热片的半导体封装件
CN101840895A (zh) * 2010-04-29 2010-09-22 南通富士通微电子股份有限公司 一种高散热球型阵列封装结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1319163C (zh) * 2003-08-29 2007-05-30 矽品精密工业股份有限公司 具有散热片的半导体封装件
CN101840895A (zh) * 2010-04-29 2010-09-22 南通富士通微电子股份有限公司 一种高散热球型阵列封装结构

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