CN101826454B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

Info

Publication number
CN101826454B
CN101826454B CN201010124748.4A CN201010124748A CN101826454B CN 101826454 B CN101826454 B CN 101826454B CN 201010124748 A CN201010124748 A CN 201010124748A CN 101826454 B CN101826454 B CN 101826454B
Authority
CN
China
Prior art keywords
exposure area
camera lens
wafer
graticule
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010124748.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN101826454A (zh
Inventor
村田通博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN101826454A publication Critical patent/CN101826454A/zh
Application granted granted Critical
Publication of CN101826454B publication Critical patent/CN101826454B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201010124748.4A 2009-02-06 2010-02-05 半导体装置的制造方法 Expired - Fee Related CN101826454B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009-026506 2009-02-06
JP2009026506 2009-02-06
JP2009-298744 2009-12-28
JP2009298744A JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN101826454A CN101826454A (zh) 2010-09-08
CN101826454B true CN101826454B (zh) 2015-01-14

Family

ID=42540679

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010124748.4A Expired - Fee Related CN101826454B (zh) 2009-02-06 2010-02-05 半导体装置的制造方法

Country Status (3)

Country Link
US (1) US8119312B2 (https=)
JP (1) JP2010206175A (https=)
CN (1) CN101826454B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101551777B1 (ko) * 2008-11-06 2015-09-10 삼성전자 주식회사 노광 장치 및 노광 데이터의 압축방법
JP6003272B2 (ja) * 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
JP2015041094A (ja) * 2013-08-23 2015-03-02 株式会社東芝 露光装置、露光方法および露光プログラム
US10859922B1 (en) * 2019-07-18 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography system and method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1150260A (zh) * 1994-10-21 1997-05-21 现代电子产业株式会社 分步曝光机的光控制装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04168718A (ja) * 1990-10-31 1992-06-16 Mitsubishi Electric Corp 露光装置
JPH05304075A (ja) * 1992-04-27 1993-11-16 Sony Corp 投影露光方法及び投影露光装置
JPH1032163A (ja) * 1996-07-12 1998-02-03 Canon Inc デバイス製造装置および方法
JP2002195912A (ja) * 2000-12-27 2002-07-10 Nikon Corp 光学特性計測方法及び装置、露光装置、並びにデバイス製造方法
JP4481561B2 (ja) * 2002-11-06 2010-06-16 川崎マイクロエレクトロニクス株式会社 半導体デバイス用マスク
JP2006108305A (ja) * 2004-10-04 2006-04-20 Nikon Corp ベストフォーカス位置検出方法とその装置、露光方法とその装置及びデバイス製造方法
KR20060055944A (ko) * 2004-11-19 2006-05-24 삼성전자주식회사 웨이퍼 노광 방법 및 이를 수행하기 위한 웨이퍼 노광 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1150260A (zh) * 1994-10-21 1997-05-21 现代电子产业株式会社 分步曝光机的光控制装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JP平4-168718A 1992.06.16 *
JP特开2002-195912A 2002.07.10 *
JP特开2004-157327A 2004.06.03 *
JP特开2006-108305A 2006.04.20 *

Also Published As

Publication number Publication date
US8119312B2 (en) 2012-02-21
US20100203433A1 (en) 2010-08-12
CN101826454A (zh) 2010-09-08
JP2010206175A (ja) 2010-09-16

Similar Documents

Publication Publication Date Title
JP3376179B2 (ja) 面位置検出方法
US20070229788A1 (en) Exposure apparatus and device manufacturing method
US11742299B2 (en) Determination method and apparatus, program, information recording medium, exposure apparatus, layout information providing method, layout method, mark detection method, exposure method, and device manufacturing method
JPWO2008038751A1 (ja) 線幅計測方法、像形成状態検出方法、調整方法、露光方法及びデバイス製造方法
US20180143539A1 (en) Exposure apparatus, exposure method, and device manufacturing method
WO2007043535A1 (ja) 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法
TW200925791A (en) Position detecting apparatus, position detecting method, exposure apparatus and device manufacturing method
CN102696095A (zh) 光学特性测量方法、曝光方法及组件制造方法
US20100296074A1 (en) Exposure method, and device manufacturing method
CN101826454B (zh) 半导体装置的制造方法
CN101387834A (zh) 曝光系统以及半导体装置的制造方法
JP3466893B2 (ja) 位置合わせ装置及びそれを用いた投影露光装置
JP3335126B2 (ja) 面位置検出装置及びそれを用いた走査型投影露光装置
JPH09219354A (ja) 位置検出装置及び該装置を備えた露光装置
JPH06216005A (ja) レベリング合わせ面計測方法
TW518704B (en) Shape measuring method, shape measuring device, exposing method, exposing device, and device manufacturing method
JPH104055A (ja) 自動焦点合わせ装置及びそれを用いたデバイスの製造方法
JPH07219243A (ja) 露光装置の評価方法
JP3344426B2 (ja) 計測方法及びデバイス製造方法
TW200931184A (en) Exposure apparatus, exposure method, and device manufacturing method
JP4029360B2 (ja) 投影露光装置及び投影露光方法並びに走査露光方法
JP2001185474A (ja) アライメント方法、アライメント装置、基板、マスク、及び露光装置
US6538724B1 (en) Exposure apparatus
JPS59161815A (ja) 投影露光装置
JP2003021914A (ja) 光学特性測定方法、光学特性測定装置、及び露光装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160316

Address after: Chiba County, Japan

Patentee after: SEIKO INSTR INC

Address before: Chiba, Chiba, Japan

Patentee before: Seiko Instruments Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150114

Termination date: 20180205

CF01 Termination of patent right due to non-payment of annual fee