CN101752278A - 半导体封装中的导线接合方法及封装结构 - Google Patents

半导体封装中的导线接合方法及封装结构 Download PDF

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Publication number
CN101752278A
CN101752278A CN200810207504A CN200810207504A CN101752278A CN 101752278 A CN101752278 A CN 101752278A CN 200810207504 A CN200810207504 A CN 200810207504A CN 200810207504 A CN200810207504 A CN 200810207504A CN 101752278 A CN101752278 A CN 101752278A
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Prior art keywords
lead
connection pad
junction surface
joint method
encapsulating structure
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CN200810207504A
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许宏达
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Ase Assembly & Test (shanghai) Ltd
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Ase Assembly & Test (shanghai) Ltd
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Priority to CN200810207504A priority Critical patent/CN101752278A/zh
Publication of CN101752278A publication Critical patent/CN101752278A/zh
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Abstract

本发明提供一种半导体封装中的导线接合方法及封装结构。此导线接合方法包括：提供焊针，其中所述焊针包含通孔；提供导线，其中所述导线是穿设于所述通孔中，且所述导线具有一尾部露于所述焊针外；弯折部分所述尾部，以形成接合部；以及接合所述接合部于接垫上。本发明的导线接合方法可应用于封装结构中，并可简化制程步骤，减少成本。

Description

半导体封装中的导线接合方法及封装结构
技术领域
本发明涉及一种导线接合方法及封装结构，特别是涉及一种可简化制程步骤的半导体封装中的导线接合方法及封装结构。
背景技术
在半导体封装构造制程中，焊线接合技术已广泛地应用于半导体芯片与封装基板或导线架之间的电性连接。一般打线接合制程是以金线为主，但由于铜线具有低成本的优势，相较于金线，铜线具有较佳的导电性及导热性，因而铜制焊线的线径可较细且散热效率较佳。
请参阅图9，其显示依据现有焊线接合的剖面示意图。目前，铜制焊线910可藉由一焊针901来接合于接垫920上，当铜制焊线910接合于接垫920时，铜制焊线910的一端是利用放电或氢焰烧结方法来形成球状端911，以接合于接垫920。然而，由于铜线910于外在的环境中，其表面易于氧化，因而导致焊线910的球状端911球形不圆、可靠度及电性衰退的现象。目前，解决球状端911氧化问题的方法是在焊线910形成球状端911时，同时，喷出惰性气体或混合气体于焊线910的球状端911上，以隔绝或稀释空气中的氧气，达到防止氧化的效果。但，上述方法亦同时会增加制程步骤和成本。
发明内容
本发明的目的之一在于提供一种半导体封装中的导线接合方法，其特征在于：所述导线接合方法包括：
提供焊针，其中所述焊针包含通孔；
提供导线，其中所述导线是穿设于所述通孔中，且所述导线具有一尾部露于所述焊针外；
弯折所述导线的所述尾部，以形成接合部；以及
接合所述导线的所述接合部于所述接垫上，其中所述接垫是位于半导体组件上。
本发明的目的之二在于提供一种封装结构，其特征在于：所述封装结构包括：
基材；
接垫，设置于所述基材上
导线，其部分弯折成接合部，而接合于接垫；以及
封胶体，形成于所述基材上，并包覆所述接垫和所述导线。
本发明的半导体封装中的导线接合方法及封装结构可取代现有的焊线前端结球步骤，且无需额外喷出惰性气体来防止氧化，因而大幅地简化制程步骤并减少成本。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
附图说明
图1显示依据本发明的一实施例的导线接合结构的剖面示意图；
图2显示依据本发明的第一实施例的导线接合方法的方法流程图；
图3显示依据本发明的第一实施例的导线弯折前的示意图；
图4显示依据本发明的第一实施例的导线弯折后的示意图；
图5显示依据本发明的第一实施例的接合导线的剖面示意图；
图6显示依据本发明的另一实施例的接合导线的剖面示意图；
图7显示依据本发明的第一实施例的封装结构的剖面示意图；
图8A和8B显示依据本发明的第二实施例的接合导线的剖面示意图；以及
图9显示依据现有焊线接合的剖面示意图。
具体实施方式
请参照图1，其显示依据本发明的第一实施例的导线接合结构的剖面示意图。本实施例的导线接合方法是用以对半导体封装结构中的导线100一端进行预先加工成弯折的接合部110，以接合(如焊接)于接垫200上，因而形成导线接合结构。
请参照图2和图3，图2显示依据本发明的第一实施例的导线接合方法的方法流程图，图3显示依据本发明的第一实施例的导线弯折前的示意图。当接合导线100于接垫200上时，首先，提供焊针101(步骤S301)，其中焊针包含通孔102。焊针101可设置于打线机(未绘示)上，用以接合导线100于接垫200上。接着，提供导线100(步骤S302)，导线100的材料例如为金、银、铜、铝或其上述任意合金，此时，如图3所示，导线100可利用焊针101来提供，并穿设于通孔102中，且导线100具有一尾部露于焊针101外。
如图3所示，在一实施例中，导线100的材料可为易氧化金属，例如铜线，此铜线于外在的环境中，其表面易于氧化而导致可靠度及电性衰退的现象，此时，导线100可具有防氧化层120，其形成于导线100的表面上，用以防止例如铜制导线的表面暴露于空气中而发生氧化情形，导致电阻值增加、电性衰退以及接合密度减少等问题。此防氧化层120可由金属材料或有机材料所形成，金属材料例如为钯、金、银或铂，有机材料例如为有机保焊剂(Organic Solderability Preservative，OSP)。其中，此抗氧化层130的厚度范围例如是在0.01微米至0.5微米之间，优选为0.1微米至0.2微米之间。
请参照图2和图4，图4显示依据本发明的第一实施例的导线弯折后的示意图。接着，弯折导线100的尾部，以形成接合部110(步骤S303)。所弯折的部分导线100(尾部)是位于导线100的一端，藉以形成接合部110于导线100的一端，其中接合部110的一侧可形成接合面111，以提供充足的接合面积来接合于接垫200。在本实施例中，此接合部110有利地是垂直于导线100。接合部110的长度有利地是小于接垫200的长度或宽度，以避免接合部110超出于接垫200的接合面积。再者，此接合部110可利用工具(未绘示)或冲压方式来弯折部分导线100而成。在本实施例中，当弯折部分导线100时，此部分导线100(尾部)是外露于焊针101的通孔102，接着，利用外力或工具来沿着焊针101的通孔102而弯折此部分导线100，因而形成接合部110。
请参照图1、图2及图5，图5显示依据本发明的第一实施例的接合导线的剖面示意图。在完成本实施例的导线加工后，接着，接合导线100的接合部110于接垫200上(步骤S304)，因而完成导线接合。此时，接合部110的接合面111是接触于接垫200。接垫200可设置于半导体组件(未绘示)上，例如：具有电路的封装基板或芯片，因而导线100可通过接垫200来电性连接于封装基板或芯片。其中，接垫200的材料例如为铝、铜、镍、钛、钯、上述任意合金或其它导电材料。当接合导线100于接垫200时，可利用焊针101来接合导线100的接合部110于接垫200上，并可辅以压力、加热或超音波振荡，藉以使接合部110的接合面111与接垫200接触摩擦，以形成紧密键结，因而形成导线100与接垫200之间的接合结构(如图1所示)。
在一实施例中，导线100的防氧化层120例如为金属材料，如图5所示，当导线100接合于接垫200时，接合部110的接合面111与接垫200之间可仍具有防氧化层120。
请参照图6，其显示依据本发明的另一实施例的接合导线的剖面示意图。在另一实施例中，导线100的防氧化层120a例如为有机材料，当导线100接合于接垫200时，在接合部110的接合面111上的防氧化层120a可被接合过程中的热能所熔解，因而接合部110的接合面111与接垫200之间可不具有防氧化层120a。
此外，本实施例的导线接合方法可应用于封装结构中的电性连接。请参照图7，其显示依据本发明的第一实施例的封装结构的剖面示意图。此时，此封装结构包括接垫200、导线100、基材300a、300b及封胶体400。接垫200是设置于基材300a、300b上，导线100可预先形成接合部110，并接合于接垫200，以形成电性连接，封胶体400是形成于基材300a、300b，并包覆接垫200和导线100。在本实施例中，基材为具有电路的封装基板300a或至少一芯片300b，而接垫200可设置于封装基板300a或芯片300b上，导线100是用以电性连接于封装基板300a和芯片300b之间，封胶体400的材料例如为环氧树脂、PMMA、聚碳酸酯(Polycarbonate)、玻璃、硅胶、光硬化型树脂(UV curable heat-resistant resin)、压克力，用以包覆接垫200、导线100、封装基板300a及芯片300b，因而形成本实施例的封装结构。
因此，本实施例的导线100可简易地预先弯折而形成接合部110，以取代现有的焊线前端形成球状步骤，因而可简化制程步骤，并可避免焊线前端的球状不圆问题。再者，即使导线100的材料为易氧化金属(如铜线)，由于本实施例的导线100可无需进行熔融结球的步骤，因而可无需喷出惰性气体来防止氧化，进一步简化制程步骤及减少成本。
请参照图8A和8B，其显示依据本发明的第二实施例的接合导线的剖面示意图。以下仅就本实施例与第一实施例间的相异处进行说明，而其相似处则在此不再赘述。相较于第一实施例，第二实施例的接合部110b可未垂直于导线100b，此时，导线100b与接合部110b之间具有角度θ，此角度θ大于(如图8A所示)或小于90度(如图8B所示)。当接合导线100b的接合部110b于接垫200上时，可依制程需求，利用焊针101对应斜向地接合导线100b的接合部110b于接垫200上，因而形成导线100b与接垫200之间的接合结构。
由上述可知，本发明的半导体封装中的导线接合方法及封装结构可取代现有的焊线前端结球步骤，即使导线的材料为易氧化金属，亦无需额外喷出惰性气体来防止氧化，且制程方法简易，因而大幅地简化制程步骤并减少成本。

Claims (10)

1.一种半导体封装中的导线接合方法，其特征在于：所述导线接合方法包括：
提供焊针，其中所述焊针包含通孔；
提供导线，其中所述导线是穿设于所述通孔中，且所述导线具有一尾部露于所述焊针外；
弯折所述导线的所述尾部，以形成接合部；以及
接合所述导线的所述接合部于所述接垫上，其中所述接垫是位于半导体组件上。
2.根据权利要求1所述的导线接合方法，其特征在于：所述导线具有防氧化层，其形成于所述导线的表面上，所述防氧化层为金属材料或有机材料。
3.根据权利要求1所述的导线接合方法，其特征在于：所述的导线接合方法包含通过加压，加热或超音波震荡的方式来接合所述接合部于所述接垫上。
4.根据权利要求1所述的导线接合方法，其特征在于：所述接合部是垂直于所述导线。
5.根据权利要求1所述的导线接合方法，其特征在于：所述导线的材料为金、银、铜、铝或其上述任意合金。
6.一种封装结构，其特征在于：所述封装结构包括：
基材；
接垫，设置于所述基材上
导线，其部分弯折成接合部，而接合于接垫；以及
封胶体，形成于所述基材上，并包覆所述接垫和所述导线。
7.根据权利要求6所述的封装结构，其特征在于：所述基材为封装基板或芯片。
8.根据权利要求6所述的封装结构，其特征在于：所述导线具有金属防氧化层，其形成于所述导线的表面上，以及所述接合部与所述接垫之间。
9.根据权利要求6所述的封装结构，其特征在于：所述导线具有有机防氧化层，其形成于所述导线的表面上。
10.根据权利要求9所述的封装结构，其特征在于：所述接合部是直接接触并连接于所述接垫。
CN200810207504A 2008-12-19 2008-12-19 半导体封装中的导线接合方法及封装结构 Pending CN101752278A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009006A (zh) * 2013-02-27 2014-08-27 矽品精密工业股份有限公司 封装基板及其制法暨半导体封装件及其制法
CN110892527A (zh) * 2017-10-26 2020-03-17 新电元工业株式会社 半导体装置以及半导体装置的制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009006A (zh) * 2013-02-27 2014-08-27 矽品精密工业股份有限公司 封装基板及其制法暨半导体封装件及其制法
CN110892527A (zh) * 2017-10-26 2020-03-17 新电元工业株式会社 半导体装置以及半导体装置的制造方法
CN110892527B (zh) * 2017-10-26 2023-10-27 新电元工业株式会社 半导体装置以及半导体装置的制造方法

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