CN101752058B - 多层电感器 - Google Patents
多层电感器 Download PDFInfo
- Publication number
- CN101752058B CN101752058B CN2009102583102A CN200910258310A CN101752058B CN 101752058 B CN101752058 B CN 101752058B CN 2009102583102 A CN2009102583102 A CN 2009102583102A CN 200910258310 A CN200910258310 A CN 200910258310A CN 101752058 B CN101752058 B CN 101752058B
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- Prior art keywords
- inductor
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- magnetic layer
- conductor pattern
- power
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/046—Printed circuit coils structurally combined with ferromagnetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49069—Data storage inductor or core
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/315,703 US7843303B2 (en) | 2008-12-08 | 2008-12-08 | Multilayer inductor |
US12/315,703 | 2008-12-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101752058A CN101752058A (zh) | 2010-06-23 |
CN101752058B true CN101752058B (zh) | 2012-09-05 |
Family
ID=42230409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102583102A Active CN101752058B (zh) | 2008-12-08 | 2009-12-04 | 多层电感器 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7843303B2 (zh) |
CN (1) | CN101752058B (zh) |
TW (1) | TWI427649B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4893773B2 (ja) * | 2009-04-02 | 2012-03-07 | 株式会社村田製作所 | 電子部品及びその製造方法 |
US8254142B2 (en) * | 2009-09-22 | 2012-08-28 | Wintec Industries, Inc. | Method of using conductive elastomer for electrical contacts in an assembly |
US8593825B2 (en) * | 2009-10-14 | 2013-11-26 | Wintec Industries, Inc. | Apparatus and method for vertically-structured passive components |
US9059026B2 (en) | 2010-06-01 | 2015-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3-D inductor and transformer |
US8471358B2 (en) * | 2010-06-01 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D inductor and transformer |
JP6047934B2 (ja) | 2011-07-11 | 2016-12-21 | 株式会社村田製作所 | 電子部品及びその製造方法 |
KR20130023622A (ko) * | 2011-08-29 | 2013-03-08 | 삼성전기주식회사 | 도체 패턴 및 이를 포함하는 전자부품 |
KR20140011693A (ko) * | 2012-07-18 | 2014-01-29 | 삼성전기주식회사 | 파워 인덕터용 자성체 모듈, 파워 인덕터 및 그 제조 방법 |
US9633772B2 (en) | 2013-03-14 | 2017-04-25 | Gentex Corporation | Solderable planar magnetic components |
US9041152B2 (en) | 2013-03-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inductor with magnetic material |
KR20150090445A (ko) | 2014-01-29 | 2015-08-06 | 주식회사 이노칩테크놀로지 | 적층칩 소자 |
US9570233B2 (en) | 2014-06-13 | 2017-02-14 | Globalfoundries Inc. | High-Q multipath parallel stacked inductor |
US9865392B2 (en) | 2014-06-13 | 2018-01-09 | Globalfoundries Inc. | Solenoidal series stacked multipath inductor |
DE102015206173A1 (de) * | 2015-04-07 | 2016-10-13 | Würth Elektronik eiSos Gmbh & Co. KG | Elektronisches Bauteil und Verfahren zum Herstellen eines elektronischen Bauteils |
KR102632344B1 (ko) * | 2016-08-09 | 2024-02-02 | 삼성전기주식회사 | 코일 부품 |
KR101862465B1 (ko) * | 2016-08-09 | 2018-05-29 | 삼성전기주식회사 | 코일 부품 |
US10763164B2 (en) * | 2016-11-17 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure with inductor and method of forming thereof |
JP6780589B2 (ja) * | 2017-06-02 | 2020-11-04 | 株式会社村田製作所 | 電子部品 |
US10584923B2 (en) * | 2017-12-07 | 2020-03-10 | General Electric Company | Systems and methods for heat exchanger tubes having internal flow features |
JP6838547B2 (ja) * | 2017-12-07 | 2021-03-03 | 株式会社村田製作所 | コイル部品およびその製造方法 |
KR102004815B1 (ko) * | 2019-02-18 | 2019-07-29 | 삼성전기주식회사 | 파워 인덕터용 자성체 모듈, 파워 인덕터 및 그 제조 방법 |
JP7136009B2 (ja) * | 2019-06-03 | 2022-09-13 | 株式会社村田製作所 | 積層コイル部品 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324080A (zh) * | 2000-05-12 | 2001-11-28 | 株式会社村田制作所 | 层叠式电子组件 |
US20050017837A1 (en) * | 1999-11-23 | 2005-01-27 | Gardner Donald S. | Integrated transformer |
CN1838349A (zh) * | 2005-03-23 | 2006-09-27 | 胜美达集团株式会社 | 电感器 |
Family Cites Families (10)
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US3185947A (en) * | 1959-11-16 | 1965-05-25 | Arf Products | Inductive module for electronic devices |
US3964087A (en) * | 1975-05-15 | 1976-06-15 | Interdyne Company | Resistor network for integrated circuit |
US5184103A (en) * | 1987-05-15 | 1993-02-02 | Bull, S.A. | High coupling transformer adapted to a chopping supply circuit |
JP3197022B2 (ja) * | 1991-05-13 | 2001-08-13 | ティーディーケイ株式会社 | ノイズサプレッサ用積層セラミック部品 |
JPH0846471A (ja) * | 1994-07-29 | 1996-02-16 | Murata Mfg Co Ltd | 積層型lc複合部品 |
US6073339A (en) * | 1996-09-20 | 2000-06-13 | Tdk Corporation Of America | Method of making low profile pin-less planar magnetic devices |
JP3362764B2 (ja) * | 1997-02-24 | 2003-01-07 | 株式会社村田製作所 | 積層型チップインダクタの製造方法 |
KR100489820B1 (ko) * | 2002-11-19 | 2005-05-16 | 삼성전기주식회사 | 세라믹 다층기판 및 그 제조방법 |
JP2004274004A (ja) * | 2003-01-16 | 2004-09-30 | Fuji Electric Device Technology Co Ltd | 超小型電力変換装置 |
EP2913722A1 (en) * | 2004-11-24 | 2015-09-02 | NovaCentrix Corp. | Electrical, plating and catalytic uses of metal nanomaterial compositions |
-
2008
- 2008-12-08 US US12/315,703 patent/US7843303B2/en active Active
-
2009
- 2009-12-04 CN CN2009102583102A patent/CN101752058B/zh active Active
- 2009-12-07 TW TW098141763A patent/TWI427649B/zh active
-
2010
- 2010-09-27 US US12/891,105 patent/US8302287B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050017837A1 (en) * | 1999-11-23 | 2005-01-27 | Gardner Donald S. | Integrated transformer |
CN1324080A (zh) * | 2000-05-12 | 2001-11-28 | 株式会社村田制作所 | 层叠式电子组件 |
CN1838349A (zh) * | 2005-03-23 | 2006-09-27 | 胜美达集团株式会社 | 电感器 |
Also Published As
Publication number | Publication date |
---|---|
TWI427649B (zh) | 2014-02-21 |
US7843303B2 (en) | 2010-11-30 |
US8302287B2 (en) | 2012-11-06 |
US20110012701A1 (en) | 2011-01-20 |
TW201023209A (en) | 2010-06-16 |
US20100141370A1 (en) | 2010-06-10 |
CN101752058A (zh) | 2010-06-23 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: The United States of California Sunnyvale mercury Street No. 495 Patentee after: ALPHA & OMEGA SEMICONDUCTOR, Ltd. Address before: The United States of California Sunnyvale mercury Street No. 495 Patentee before: Alpha and Omega Semiconductor Inc. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160901 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: Bermuda Hamilton Church 2 Cola Lunden House Street Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. Effective date of registration: 20160901 Address after: Bermuda Hamilton Church 2 Cola Lunden House Street Patentee after: ALPHA & OMEGA SEMICONDUCTOR, Ltd. Address before: The United States of California Sunnyvale mercury Street No. 495 Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Multilayer inductor Effective date of registration: 20191210 Granted publication date: 20120905 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20120905 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |