CN101740381B - 肖特基二极管的制备方法 - Google Patents
肖特基二极管的制备方法 Download PDFInfo
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- CN101740381B CN101740381B CN2008100440078A CN200810044007A CN101740381B CN 101740381 B CN101740381 B CN 101740381B CN 2008100440078 A CN2008100440078 A CN 2008100440078A CN 200810044007 A CN200810044007 A CN 200810044007A CN 101740381 B CN101740381 B CN 101740381B
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CN2008100440078A CN101740381B (zh) | 2008-11-25 | 2008-11-25 | 肖特基二极管的制备方法 |
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CN2008100440078A CN101740381B (zh) | 2008-11-25 | 2008-11-25 | 肖特基二极管的制备方法 |
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CN101740381A CN101740381A (zh) | 2010-06-16 |
CN101740381B true CN101740381B (zh) | 2012-02-22 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103700590B (zh) * | 2012-09-27 | 2016-11-23 | 无锡华润矽科微电子有限公司 | 实现肖特基二极管的双极ic结构的制造方法及双极ic结构 |
US8927385B2 (en) * | 2012-12-17 | 2015-01-06 | Texas Instruments Incorporated | ZTCR poly resistor in replacement gate flow |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1639876A (zh) * | 2001-01-11 | 2005-07-13 | 因芬尼昂技术股份公司 | 肖特基二极管 |
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CN1639876A (zh) * | 2001-01-11 | 2005-07-13 | 因芬尼昂技术股份公司 | 肖特基二极管 |
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CN101740381A (zh) | 2010-06-16 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |