CN101710596A - Silicon solar battery - Google Patents
Silicon solar battery Download PDFInfo
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- CN101710596A CN101710596A CN 200910153943 CN200910153943A CN101710596A CN 101710596 A CN101710596 A CN 101710596A CN 200910153943 CN200910153943 CN 200910153943 CN 200910153943 A CN200910153943 A CN 200910153943A CN 101710596 A CN101710596 A CN 101710596A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a silicon solar battery which comprises a silicon substrate, wherein a silicon nitride film is deposited on the front surface of the silicon substrate; a group of auxiliary grid lines are arranged on the silicon nitride film; an aluminum-back surface field (Al-BSF) made of aluminum slurry is coated on the back surface of the silicon substrate; a main grid line is arranged on the Al-BSF; a plurality of conducting through holes which penetrate through the silicon substrate are arranged on the silicon substrate; conducting slurry is filled in the conducting through holes; the auxiliary grid lines and the main grid line are respectively connected with two ends of the conducting slurry; and an insulation tank for isolating the Al-BSF from the main grid line is arranged at the periphery of the main grid line. The invention has the advantages that by arranging the main grid line on the back surface of the silicon substrate, arranging the conducting through holes on the silicon substrate and filling the conducting slurry into the conducting through holes, each auxiliary grid line is mutually conducted with the main grid line through the conducting slurry, and the current generated by the battery under the condition of illumination passes through the auxiliary grid lines and then passes through the conducting slurry to be converged onto the main grid line to be derived. In the battery with the structure, as the main grid line for converging current is arranged on the back surface of the silicon substrate, the effective illumination surface of the front surface of the battery is increased.
Description
Technical field
The present invention relates to a kind of battery, especially relate to a kind of silicon solar cell.
Background technology
Along with day being becoming tight of global energy, solar energy is subjected to the extensive attention of countries in the world with exclusive advantage such as pollution-free, that the market space is big.Solar energy to utilize mode to have multiple, comprise luminous energy-electric energy conversion, luminous energy-thermal power transfer etc.Solar cell is the exemplary of luminous energy-electric energy conversion, and it is to utilize the photogenic voltage principle of semi-conducting material to make.Solar cell is according to the difference of semiconductor optoelectronic transition material kind, can be divided into multiplely, and wherein, silicon solar cell is the most common.
At present, the silicon solar cell of common comparative maturity such as Fig. 1 a on the market, shown in Fig. 1 b and Fig. 1 c, this silicon solar cell comprises silicon substrate 1, utilize diffusion technology in silicon substrate 1, to mix impurity, as boron, phosphorus etc., when mixing the boron atomic time, will exist a hole in the silicon substrate 1, form p N-type semiconductor N 82, equally, mix after the phosphorus atoms, will exist an electronics in the silicon substrate 1, form n N-type semiconductor N 81, when p N-type semiconductor N 82 combines with n N-type semiconductor N 81, in two kinds of semi-conductive interface region, form electrical potential difference, it is pn knot 83, the front of silicon substrate 1 strengthens chemical vapour deposition technique by using plasma and deposits one deck silicon nitride film 2, adopt the silver paste silk screen printing that main grid line 3 and one group of secondary grid line 4 that evenly distributes and be connected with main grid line 3 are arranged on the silicon nitride film 2, constitute front metal electrode (negative electrode) by main grid line 3, directly draw the negative electrode lead during assembling from main grid line 3, the electric current that silicon solar cell produces under the illumination converges to main grid line 3 backs again by secondary grid line 4 and derives, on technology, require the about 3mm of spacing and the about 0.10～0.12mm of width of secondary grid line 4 usually, the back side of silicon substrate 1 is coated with aluminum slurry and constitutes aluminium back of the body field 6, the aluminium back of the body 6 a formation back metal electrode (positive electrode), for ease of on aluminium back of the body field 6, drawing the positive electrode lead, usually on aluminium back of the body field 6, adopt silver paste to be printed with welding bar 7, draw the positive electrode lead by welding bar 7, wherein the main grid line 3, secondary grid line 4 and welding bar 7 all utilize silver paste by silk screen printing, oven dry, operations such as Fast Sintering heat treatment make, this silicon solar cell generally requires main grid line 3 and secondary grid line 4 can realize good Ohmic contact with the front of silicon substrate 1, and require simultaneously that main grid line 3 and secondary grid line 4 try one's best thin, to reduce blocking of main grid line 3 and 4 pairs of sun incident lights of secondary grid line, increase effective plane of illumination, improve the unit are energy output of silicon solar cell.Even but do the main grid line thin again, also still have certain width, the area of the main grid line of present solar cell will account for 3.5% of the gross area at least, and therefore this silicon solar cell fails really to reach the requirement of the effective plane of illumination of effective increase.
Summary of the invention
Technical problem to be solved by this invention provides and a kind ofly can increase the effective plane of illumination of battery front side well, improves the energy output of unit are, and silicon solar cell simple in structure.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of silicon solar cell, comprise silicon substrate, the front of described silicon substrate deposits silicon nitride film, described silicon nitride film is provided with one group of uniform secondary grid line of spacing, the back side of described silicon substrate is coated with aluminum slurry and constitutes aluminium back of the body field, the positive electrode of a described aluminium back of the body formation battery, the back side of described silicon substrate is provided with and all perpendicular main grid lines in described secondary grid line space, described silicon substrate is provided with a plurality of conductive through holes that run through described silicon substrate, be filled with electrocondution slurry in the described conductive through hole, every described secondary grid line and described main grid line are connected to the two ends of described electrocondution slurry, described secondary grid line is by described electrocondution slurry and described main grid line mutual conduction, described main grid line constitutes the negative electrode of battery, and the periphery of described main grid line is provided with the insulation tank that is used to isolate described aluminium back of the body field and described main grid line.
Described electrocondution slurry is the silver paste with excellent conductive performance.
Described insulation tank is for making by the laser technology scribing on described aluminium back of the body field.
The diameter of described conductive through hole is more than or equal to the line footpath of described secondary grid line.
Compared with prior art, the invention has the advantages that by the main grid line being arranged on the back side of silicon substrate, the conductive through hole of through-silicon matrix is set on silicon substrate again, filled conductive slurry in conductive through hole, every secondary grid line and main grid line are connected to the two ends of electrocondution slurry, make secondary grid line and main grid line mutual conduction, the main grid line constitutes the negative electrode of battery, the electric current that silicon solar cell produces under illumination converges on the main grid line through the electrocondution slurry in the conductive through hole by secondary grid line again like this derives, the main grid line that the silicon solar cell of this structure owing to be used to converges electric current is arranged at the back side of silicon substrate, reduced the shading area of battery front side, increase effective plane of illumination of battery front side, thereby improved the unit are energy output of silicon solar cell.
Description of drawings
Fig. 1 a is the Facad structure schematic diagram of existing silicon solar cell;
Fig. 1 b is the structure schematic diagram of existing silicon solar cell;
Fig. 1 c is the cross-sectional schematic of existing silicon solar cell;
Fig. 2 a is the Facad structure schematic diagram of silicon solar cell of the present invention;
Fig. 2 b is the structure schematic diagram of silicon solar cell of the present invention;
Fig. 2 c is the cross-sectional schematic of silicon solar cell of the present invention.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
As Fig. 2 a, shown in Fig. 2 b and Fig. 2 c, a kind of silicon solar cell, comprise silicon substrate 11, silicon substrate 11 can be selected according to actual conditions, as selects for use resistivity at 0.6～2 ohm, and thickness is the silicon chip of 0.2mm, utilize known diffusion technology in silicon substrate 11, to mix impurity, as boron, phosphorus etc. when mixing the boron atomic time, will exist a hole in the silicon substrate 11, form p N-type semiconductor N 12, equally, mix after the phosphorus atoms, will exist an electronics in the silicon substrate 11, form n N-type semiconductor N 13, when p N-type semiconductor N 12 combines with n N-type semiconductor N 13, form electrical potential difference in two kinds of semi-conductive interface region, promptly the pn knot 14.Adopt known plasma enhanced chemical vapor deposition method at the front of silicon substrate 11 deposition one deck silicon nitride film 15, the effect of silicon nitride film 15 mainly is in order to reduce the light reflection, utilize silver paste to adopt known screen printing technique on silicon nitride film 15, to print one group of pectination and the uniform secondary grid line 16 of spacing, spacing between the secondary grid line 16 can be made as 3mm, the back side of silicon substrate 11 is coated with aluminum slurry and constitutes aluminium back of the body field 17, the positive electrode of the aluminium back of the body 17 a formation battery, for ease of on aluminium back of the body field 17, drawing the positive electrode lead, on aluminium back of the body field 17, utilize silver paste to adopt screen printing technique to be printed with welding bar 18, draw the positive electrode lead by welding bar 18.The back side of silicon substrate 11 utilize silver paste adopt screen printing technique be printed with two with all perpendicular main grid lines 19 in secondary grid line 16 spaces, be provided with the conductive through hole 20 that runs through silicon nitride film 15 and silicon substrate 11 between every secondary grid line 16 and each the root main grid line 19, be positioned at two conductive through hole 20 left-right symmetric on the secondary grid line 16, promptly two conductive through holes 20 are identical with the midline position standoff distance of silicon substrate 11, as distance 30mm, be filled with electrocondution slurry 21 in the conductive through hole 20, every secondary grid line 16 is by electrocondution slurry 21 and main grid line 19 mutual conduction in the conductive through hole 20, main grid line 19 constitutes the negative electrode of battery, can directly draw the negative electrode lead from main grid line 19 during assembling, the periphery of main grid line 19 is provided with the insulation tank 23 that is used to isolate aluminium back of the body field 17 and main grid line 19.The cross-sectional schematic that Fig. 2 c provides is to print behind secondary grid line 16 and the main grid line 19 not it is carried out schematic diagram before the sintering.
In this specific embodiment, electrocondution slurry 21 can adopt commercially available silver paste, and the electric conductivity of silver paste is better.
In this specific embodiment, insulation tank 23 is actually and utilizes the laser technology scribing to make, and it mainly is for aluminium back of the body field 17 being kept apart with main grid line 19, making a main grid line 19 and the 17 not conducting of the aluminium back of the body.
In this specific embodiment, conductive through hole 20 utilizes the laser technology punching to make, and the diameter of conductive through hole 20 can be designed to the line footpath more than or equal to secondary grid line 16 in the punching process; In the actual application, only need to guarantee that the electric current that silicon solar cell produces can be smoothly by getting final product by converging on the main grid line 19 behind the electrocondution slurry 21 in the conductive through hole 20 behind the secondary grid line 16 again, be designed to directly equate or be slightly larger than the line footpath of secondary grid line 16 with the line of secondary grid line 16 at this diameter with conductive through hole 20, if the line of secondary grid line 16 directly is 0.10mm, can be about 0.15mm with the aperture design of conductive through hole 20 then.
In this specific embodiment, main grid line 19, secondary grid line 16 and welding bar 18 all are to use silver paste to make by operations such as silk screen printing, oven dry, Fast Sintering heat treatments, adopt silver paste, are because the electric conductivity of silver paste is better.In this specific embodiment, main grid line 19 is provided with two.
Provide the preparation process of silicon solar cell of the present invention at this:
1, silicon substrate is selected: select for use resistivity at 0.6～2 ohm, thickness is the silicon chip of 0.2mm.
2, adopt laser drilling to the silicon chip formation conductive through hole that punches: silicon substrate to be punched with laser, pore size is 0.12mm, wherein transverse holes quantity is 2, and with the midline position of the silicon substrate 30mm of being separated by respectively, left-right symmetric, vertically make a call to a conductive through hole, its top and bottom are connected every 3mm.
3, surface-texturing: in the mixed solution of the NaOH about 60～80 ℃, sodium metasilicate, absolute ethyl alcohol, isopropyl alcohol and deionized water silicon chip is carried out caustic corrosion making herbs into wool, form the pyramid structure on surface; Once through persalt, the alkali lye of remained on surface is removed in the cleaning of hydrofluoric acid and deionized water then; The silicon chip that has cleaned is put into drier to be dried.
4, diffusion: silicon chip is inserted in the quartz boat successively, and quartz boat is put into diffusion furnace, and the diffusion furnace temperature is controlled at 800 ℃～900 ℃, and aerating oxygen and phosphorus oxychloride are carried out diffusion in 0.5～1 hour, make the pn knot.
5, plating conducting film: the silicon chip that diffusion is finished is put into sputtering equipment, sputter one deck zinc oxide conducting film on the one side of silicon chip.
6, plasma etching: neat being deposited on the substrate of silicon chip that diffusion is finished, press pouring weight, put it into then in the plasma etching machine, power-on aerating oxygen and carbon tetrafluoride gas carry out etching, promptly removed the N+ knot of silicon chip periphery after etching is finished, the utmost point up and down of silicon chip is separated; The silicon chip that etching is intact is put into and is passed through hydrofluoric acid and washed with de-ionized water successively, puts into drier at last and dries.
7, system antireflective coating: the silicon chip that etching is intact is put into existing P ECVD equipment, feed silane and ammonia, temperature about 350 ℃～450 ℃ is carried out plasma reinforced chemical vapour deposition, at one side deposition one deck silicon nitride film of plating zinc peroxide conducting film.
8, the positive secondary grid line of printing: silicon chip is put into screen printer, proofread and correct good secondary grid line half tone position, add the silver slurry, print positive secondary grid line in the one side that is coated with silicon nitride film; Make silicon chip through about 300 ℃ drying oven after being completed for printing, remove the most of organic substance in the secondary grid line.
9, with the slurry filled conductive through hole of the same race of grid line: silicon chip is put into screen printer, proofreaied and correct conductive through hole half tone position, add the silver slurry, the printing conductive through hole is inserted the silver slurry in the conductive through hole.
10, printed back main grid line and welding bar: silicon chip is put into screen printer, proofreaied and correct main grid line and welding bar half tone position, add the silver slurry, at one side printing main grid line that does not print secondary grid line and welding bar; Make silicon chip through about 200 ℃ drying oven after being completed for printing, remove the most of organic substance in main grid line and the welding bar.
11, printed back aluminium back of the body field: silicon chip is put into screen printer, proofreaied and correct an aluminium back of the body half tone position, the adding aluminium paste is in the one side printing aluminium back of the body field that is printed with the main grid line and welds bar; Make silicon chip through about 300 ℃ drying oven after being completed for printing, remove the most of organic substance in the aluminium back of the body.
12, sintering: make silicon chip through high temperature sintering furnace, in the stove each warm area temperature between 300 ℃～1000 ℃, silicon chip basic forming behind the sintering.
13, laser scribing: the silicon chip behind the sintering is placed in the laser scribing means, carries out scribing along the main grid line, main grid line and aluminium back of the body field is separated fully, prevent that the positive and negative electrode contact from forming short circuit in the one side of aluminium back of the body field.
Claims (4)
1. silicon solar cell, comprise silicon substrate, the front of described silicon substrate deposits silicon nitride film, described silicon nitride film is provided with one group of uniform secondary grid line of spacing, the back side of described silicon substrate is coated with aluminum slurry and constitutes aluminium back of the body field, the positive electrode of a described aluminium back of the body formation battery, the back side that it is characterized in that described silicon substrate is provided with and all perpendicular main grid lines in described secondary grid line space, described silicon substrate is provided with a plurality of conductive through holes that run through described silicon substrate, be filled with electrocondution slurry in the described conductive through hole, every described secondary grid line and described main grid line are connected to the two ends of described electrocondution slurry, described secondary grid line is by described electrocondution slurry and described main grid line mutual conduction, described main grid line constitutes the negative electrode of battery, and the periphery of described main grid line is provided with the insulation tank that is used to isolate described aluminium back of the body field and described main grid line.
2. a kind of silicon solar cell according to claim 1 is characterized in that described electrocondution slurry is the silver paste with excellent conductive performance.
3. a kind of silicon solar cell according to claim 1 is characterized in that described insulation tank is for making by the laser technology scribing on described aluminium back of the body field.
4. according to each described a kind of silicon solar cell in the claim 1 to 3, it is characterized in that the line footpath of the diameter of described conductive through hole more than or equal to described secondary grid line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910153943 CN101710596A (en) | 2009-11-23 | 2009-11-23 | Silicon solar battery |
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| CN 200910153943 CN101710596A (en) | 2009-11-23 | 2009-11-23 | Silicon solar battery |
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| CN101710596A true CN101710596A (en) | 2010-05-19 |
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| CN 200910153943 Pending CN101710596A (en) | 2009-11-23 | 2009-11-23 | Silicon solar battery |
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|---|---|---|---|---|
| CN102130194A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | High-transmission-rate low-shading-area solar cell |
| CN102148288A (en) * | 2011-01-27 | 2011-08-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN102163629A (en) * | 2010-12-31 | 2011-08-24 | 友达光电股份有限公司 | Solar cell |
| CN102180043A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for printing pattern on solar battery sheet |
| CN102208486A (en) * | 2011-04-18 | 2011-10-05 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of MWT (Metal Wrap Through) solar cell |
| CN102208492A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of solar battery |
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| CN102299212A (en) * | 2011-09-28 | 2011-12-28 | 山东力诺太阳能电力股份有限公司 | Method for manufacturing crystal silicon solar cell |
| CN102386254A (en) * | 2010-09-06 | 2012-03-21 | 无锡尚德太阳能电力有限公司 | Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof |
| WO2012037743A1 (en) * | 2010-09-26 | 2012-03-29 | 常州天合光能有限公司 | Solar cell with high light reflecting grid line |
| CN102610666A (en) * | 2011-01-20 | 2012-07-25 | 无锡尚德太阳能电力有限公司 | MWT (metal wrap through) back-contact solar cell, preparation method and module thereof |
| CN102956746A (en) * | 2012-10-31 | 2013-03-06 | 常州天合光能有限公司 | Manufacturing method of metallization wrap-through (MWT) battery |
| CN103035754A (en) * | 2013-01-10 | 2013-04-10 | 英利集团有限公司 | Solar battery |
| CN103187335A (en) * | 2011-12-28 | 2013-07-03 | 浚鑫科技股份有限公司 | Temperature control method and device for antireflective film preparation furnace |
| CN103762252A (en) * | 2014-01-25 | 2014-04-30 | 中利腾晖光伏科技有限公司 | Grid line structure of solar cell |
| CN104201243A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Slurry filling method used for inside of MWT (metallization wrap-through) battery hole |
| CN105280733A (en) * | 2015-09-17 | 2016-01-27 | 广东爱康太阳能科技有限公司 | N type crystal silicon solar cell and preparation method thereof |
| CN105514185A (en) * | 2015-12-18 | 2016-04-20 | 四川钟顺太阳能开发有限公司 | Medium- and low-magnification concentrator solar cell |
| CN106157834A (en) * | 2016-08-22 | 2016-11-23 | 榴莲客（北京）科技有限公司 | A kind of mobile digital signage possessing solar panel |
| CN103187335B (en) * | 2011-12-28 | 2016-12-14 | 中建材浚鑫科技股份有限公司 | The temperature-controlled process of a kind of antireflective film preparation furnace and device |
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2009
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| CN102386254A (en) * | 2010-09-06 | 2012-03-21 | 无锡尚德太阳能电力有限公司 | Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof |
| WO2012037743A1 (en) * | 2010-09-26 | 2012-03-29 | 常州天合光能有限公司 | Solar cell with high light reflecting grid line |
| CN102180043A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for printing pattern on solar battery sheet |
| CN102180043B (en) * | 2010-12-02 | 2012-08-08 | 浚鑫科技股份有限公司 | Method for printing pattern on solar battery sheet |
| CN102163629A (en) * | 2010-12-31 | 2011-08-24 | 友达光电股份有限公司 | Solar cell |
| CN102130194A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | High-transmission-rate low-shading-area solar cell |
| CN102610666A (en) * | 2011-01-20 | 2012-07-25 | 无锡尚德太阳能电力有限公司 | MWT (metal wrap through) back-contact solar cell, preparation method and module thereof |
| CN102148288A (en) * | 2011-01-27 | 2011-08-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN102208486A (en) * | 2011-04-18 | 2011-10-05 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of MWT (Metal Wrap Through) solar cell |
| CN102208486B (en) * | 2011-04-18 | 2013-01-16 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of MWT (Metal Wrap Through) solar cell |
| CN102208492A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of solar battery |
| CN102208492B (en) * | 2011-05-20 | 2012-08-08 | 上海采日光伏技术有限公司 | Manufacturing method of solar battery |
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| CN102290473B (en) * | 2011-07-06 | 2013-04-17 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| CN102299212A (en) * | 2011-09-28 | 2011-12-28 | 山东力诺太阳能电力股份有限公司 | Method for manufacturing crystal silicon solar cell |
| CN103187335A (en) * | 2011-12-28 | 2013-07-03 | 浚鑫科技股份有限公司 | Temperature control method and device for antireflective film preparation furnace |
| CN103187335B (en) * | 2011-12-28 | 2016-12-14 | 中建材浚鑫科技股份有限公司 | The temperature-controlled process of a kind of antireflective film preparation furnace and device |
| CN102956746A (en) * | 2012-10-31 | 2013-03-06 | 常州天合光能有限公司 | Manufacturing method of metallization wrap-through (MWT) battery |
| CN103035754A (en) * | 2013-01-10 | 2013-04-10 | 英利集团有限公司 | Solar battery |
| CN103762252A (en) * | 2014-01-25 | 2014-04-30 | 中利腾晖光伏科技有限公司 | Grid line structure of solar cell |
| CN103762252B (en) * | 2014-01-25 | 2015-12-09 | 中利腾晖光伏科技有限公司 | A kind of grid line structure of solar cell |
| CN104201243A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Slurry filling method used for inside of MWT (metallization wrap-through) battery hole |
| CN105280733A (en) * | 2015-09-17 | 2016-01-27 | 广东爱康太阳能科技有限公司 | N type crystal silicon solar cell and preparation method thereof |
| CN105514185A (en) * | 2015-12-18 | 2016-04-20 | 四川钟顺太阳能开发有限公司 | Medium- and low-magnification concentrator solar cell |
| CN106157834A (en) * | 2016-08-22 | 2016-11-23 | 榴莲客（北京）科技有限公司 | A kind of mobile digital signage possessing solar panel |
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