WO2012037743A1 - Solar cell with high light reflecting grid line - Google Patents

Solar cell with high light reflecting grid line Download PDF

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Publication number
WO2012037743A1
WO2012037743A1 PCT/CN2010/078483 CN2010078483W WO2012037743A1 WO 2012037743 A1 WO2012037743 A1 WO 2012037743A1 CN 2010078483 W CN2010078483 W CN 2010078483W WO 2012037743 A1 WO2012037743 A1 WO 2012037743A1
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Prior art keywords
light reflecting
high light
grid line
cell
gate line
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PCT/CN2010/078483
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French (fr)
Chinese (zh)
Inventor
张舒
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常州天合光能有限公司
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Publication of WO2012037743A1 publication Critical patent/WO2012037743A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a solar cell having a high inverse grating line. BACKGROUND OF THE INVENTION As shown in Fig. 1 , Fig. 2 and Fig. 3, at present, the current generated by the solar cell sheet 3 is collected, and the metal grid line is said to be
  • the main gate line 2 and the outer solder ribbon 4 are directly connected (the solder strip 4 is soldered to the main gate line 2), and the sub-gate line 1 is a finer metallized region for collecting the book current to be transmitted to the main gate line 2.
  • the grid line design optimization goal is to reduce the loss due to the internal resistance and the shielding of the cell 3 by optimizing the current collection, and directly considering the grid line design, the utilization of the solar cell by the packaged cell 3 is less improved.
  • the structure of the electrode is relatively simple, and the surface thereof is generally a plane in a macroscopic manner, and the current generated by the connection of the outer flat strip 4 is derived.
  • the present invention provides a solar cell having a high inverse grating line.
  • a solar cell with a high inverse grating line comprising a cell sheet, the surface of the cell sheet being constructed with a highly reflective main gate line and a sub-gate perpendicular to the high-reflection main gate line a line, the surface of the high-reflection main gate line has a trench, and adjacent cells are connected by a solder strip, and one end of the high-reflection main gate line has a flat surface of a highly reflective main gate line for connecting the solder ribbon.
  • the invention has the beneficial effects of reducing the series resistance of the battery and improving the photoelectric conversion efficiency of the battery.
  • packaging into components can effectively improve the utilization of incident light, thereby increasing the output power of the component and increasing the fill factor of the component.
  • FIG. 1 is a schematic view of a grid line of a conventional solar cell
  • FIG. 2 is a schematic diagram of an existing solar cell interconnection structure
  • FIG. 3 is a schematic diagram of a light path book of a grid line region of a conventional solar cell module
  • FIG. 4 is a schematic view of an optical path of a gate line region of a high anti-grating line solar cell module of the present invention
  • FIG. 5 is a schematic diagram of a grid line of a high anti-grating line solar cell of the present invention
  • Figure 6 is a structural diagram of the interconnection structure of the high inverse grating line solar cell of the present invention.
  • Sub-gate line 2. Main grid line, 3. Cell sheet, 4. Solder ribbon, 5. Glass layer, 6. EVA layer, 7. High-reflection main grid line, 7-1. Trench, 7-2 Highly reflective main grid line end flat surface.
  • An embodiment of a solar cell having a high inverse grating line as shown in FIGS. 4 to 5 and FIG. 6 includes a cell sheet 3 having a surface on which a highly reflective main gate line 7 is formed and which is perpendicular to the highly reflective main gate line 7.
  • the sub-gate line 1, the surface of the high-reflection main gate line 7 has a trench 7-1, and the adjacent cell sheets 3 are connected by a solder ribbon 4, and one end portion of the high-reflection main gate line 7 has a high connection for soldering the strip 4. Reflecting the end of the main grid line flat surface 7-2.
  • the high-reflection main grid line 7 By constructing the high-reflection main grid line 7 on the surface of the solar cell sheet 3, it is possible to effectively utilize the illumination to high reflection.
  • the sunlight on the surface of the main grid line 7 causes the sunlight incident on the highly reflective main grid line 7 to be reflected by the groove-shaped slope and re-incident into the EVA layer 6 (EVA Chinese name is ethylene-vinyl acetate copolymer) Excluding the absorption portion of the light (since the refractive index of the EVA layer 6 and the glass layer 5 are very similar, both are about 1.5, so the glass layer 5, the EVA layer 6 can be considered that no interface reflection occurs), and most of the reflected light reaches the glass.
  • EVA Chinese name is ethylene-vinyl acetate copolymer
  • the photoelectric conversion efficiency is improved; at the same time, when the battery sheets 3 are interconnected, the use length of the outer solder ribbon 4 is reduced, thereby reducing the coverage of the main gate lines, effectively reducing the solder book contact resistance and the strip resistance, thereby reducing the components. Series resistance.
  • the design of the end of the ribbon is shown in Figures 5 and 6.
  • the main gate lines constructed at the end positions of the battery sheets 3 can still be planarized by the conventional main grid lines 2 (Fig. 1).
  • the top electrode of the cell sheet 3 is soldered to the back electrode of the adjacent cell sheet 3 by soldering the solder ribbon 4 at the end portion 7-2 of the top electrode.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A solar cell with high light reflecting grid line is provided, and it comprises a cell sheet (3), a high light reflecting main grid line (7) located on the surface of the cell sheet (3) and auxiliary grid lines (1) which are vertical to the high light reflecting main grid line (7), wherein, the surface of the high light reflecting main grid line (7) is provided with slots (7-1); the adjacent cell sheets are connected by a solder strip (4), and one end of the high light reflecting main grid line is provided with a flat surface (7-2) on the end of the high light reflecting main grid line connected with the solder strip (4). The present invention reduces serial connection resistance of the cell and improves photoelectric conversion efficiency of the cell. In addition, the utilization ratio of incident light can be effectively improved by using the high light reflecting structure after encapsulating the high light reflecting structure to be the subassembly, thus output power of the subassembly and filling factors of the subassembly can be improved.

Description

具有高反光栅线的太阳电池 技术领域 本发明涉及一种具有高反光栅线的太阳电池。 背景技术 如图 1图 2图 3所示， 目前， 要收集太阳电池片 3产生的电流， 金属栅线 说  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell having a high inverse grating line. BACKGROUND OF THE INVENTION As shown in Fig. 1 , Fig. 2 and Fig. 3, at present, the current generated by the solar cell sheet 3 is collected, and the metal grid line is said to be
是必须的。 通常主栅线 2和外部焊带 4直接相连 （主栅线 2上焊有焊带 4)， 而 副栅线 1是更细小的金属化区域， 用来收集书电流传输给主栅线 2。通常， 栅线设 计优化目标是通过优化电流收集来减小由于内部电阻和电池片 3遮蔽而产生的 损失， 而直接考虑栅线设计对封装后电池片 3对太阳光的利用率的改善较少。 电极的结构比较单一， 其表面宏观上通常为一平面， 通过外部扁长形焊带 4 的 连接将产生的电流导出。 当太阳光垂直电池片入射时， 照射到焊带 4表面区域 的太阳光不能被有效利用， 且焊接时， 焊带 4与主栅线 2的焊接部位会引起附 加的接触电阻从而增加组件的串联电阻， 降低组件的填充因子。 发明内容 本发明要解决的技术问题是： 为了降低电池的串联电阻， 提高电池的转换 效率， 本发明提供了一种具有高反光栅线的太阳电池。 本发明解决其技术问题所采用的技术方案是： 一种具有高反光栅线的太阳 电池， 包括电池片， 电池片的表面构筑有高反光主栅线以及与高反光主栅线垂 直的副栅线， 所述的高反光主栅线表面具有沟槽， 相邻电池片通过焊带相连接， 高反光主栅线的一端部具有用于连接焊带的高反光主栅线端部平表面。 本发明的有益效果是， 降低了电池的串联电阻， 提高电池的光电转换效率。 另外， 利用高反光结构， 封装成组件后可以有效提高入射光的利用率， 从而提 高组件的输出功率， 提高组件的填充因子。 It's required. Typically, the main gate line 2 and the outer solder ribbon 4 are directly connected (the solder strip 4 is soldered to the main gate line 2), and the sub-gate line 1 is a finer metallized region for collecting the book current to be transmitted to the main gate line 2. In general, the grid line design optimization goal is to reduce the loss due to the internal resistance and the shielding of the cell 3 by optimizing the current collection, and directly considering the grid line design, the utilization of the solar cell by the packaged cell 3 is less improved. . The structure of the electrode is relatively simple, and the surface thereof is generally a plane in a macroscopic manner, and the current generated by the connection of the outer flat strip 4 is derived. When the solar light is incident perpendicular to the cell, the sunlight that is irradiated onto the surface of the strip 4 cannot be effectively utilized, and when soldering, the soldered portion of the strip 4 and the main gate line 2 causes an additional contact resistance to increase the series connection of the components. Resistance, reducing the fill factor of the component. SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is: In order to reduce the series resistance of a battery and improve the conversion efficiency of the battery, the present invention provides a solar cell having a high inverse grating line. The technical solution adopted by the present invention to solve the technical problem thereof is: a solar cell with a high inverse grating line, comprising a cell sheet, the surface of the cell sheet being constructed with a highly reflective main gate line and a sub-gate perpendicular to the high-reflection main gate line a line, the surface of the high-reflection main gate line has a trench, and adjacent cells are connected by a solder strip, and one end of the high-reflection main gate line has a flat surface of a highly reflective main gate line for connecting the solder ribbon. The invention has the beneficial effects of reducing the series resistance of the battery and improving the photoelectric conversion efficiency of the battery. In addition, by using a highly reflective structure, packaging into components can effectively improve the utilization of incident light, thereby increasing the output power of the component and increasing the fill factor of the component.
附图说明 DRAWINGS
下面结合附图和实施例对本发明进一步说明。  The invention will now be further described with reference to the drawings and embodiments.
图 1是现有太阳电池栅线示意图；  1 is a schematic view of a grid line of a conventional solar cell;
图 2是现有太阳电池互连结构说图； 图 3是现有太阳电池组件栅线区域光路书示意图；  2 is a schematic diagram of an existing solar cell interconnection structure; FIG. 3 is a schematic diagram of a light path book of a grid line region of a conventional solar cell module;
图 4是本发明高反光栅线太阳电池组件栅线区域光路示意图； 图 5是本发明高反光栅线太阳电池栅线示意图；  4 is a schematic view of an optical path of a gate line region of a high anti-grating line solar cell module of the present invention; FIG. 5 is a schematic diagram of a grid line of a high anti-grating line solar cell of the present invention;
图 6是本发明高反光栅线太阳电池互连结构图。  Figure 6 is a structural diagram of the interconnection structure of the high inverse grating line solar cell of the present invention.
1.副栅线， 2.主栅线， 3.电池片， 4.焊带， 5.玻璃层， 6. EVA层， 7.高反光 主栅线， 7-1.沟槽， 7-2.高反光主栅线端部平表面。 1. Sub-gate line, 2. Main grid line, 3. Cell sheet, 4. Solder ribbon, 5. Glass layer, 6. EVA layer, 7. High-reflection main grid line, 7-1. Trench, 7-2 Highly reflective main grid line end flat surface.
具体实施方式 detailed description
现在结合附图对本发明作进一步详细的说明。 这些附图均为简化的示意图， 仅以示意方式说明本发明的基本结构， 因此其仅显示与本发明有关的构成。  The invention will now be described in further detail with reference to the drawings. The drawings are simplified schematic diagrams, and only the basic structure of the invention is illustrated in a schematic manner, and thus only the configurations related to the present invention are shown.
如图 4图 5图 6所示一种具有高反光栅线的太阳电池的实施例， 包括电池 片 3，电池片 3的表面构筑有高反光主栅线 7以及与高反光主栅线 7垂直的副栅 线 1， 高反光主栅线 7表面具有沟槽 7-1， 相邻电池片 3通过焊带 4相连接， 高 反光主栅线 7的一端部具有用于连接焊带 4的高反光主栅线端部平表面 7-2。  An embodiment of a solar cell having a high inverse grating line as shown in FIGS. 4 to 5 and FIG. 6 includes a cell sheet 3 having a surface on which a highly reflective main gate line 7 is formed and which is perpendicular to the highly reflective main gate line 7. The sub-gate line 1, the surface of the high-reflection main gate line 7 has a trench 7-1, and the adjacent cell sheets 3 are connected by a solder ribbon 4, and one end portion of the high-reflection main gate line 7 has a high connection for soldering the strip 4. Reflecting the end of the main grid line flat surface 7-2.
通过在太阳电池片 3表面构筑高反光主栅线 7，可以有效利用照射到高反光 主栅线 7表面的太阳光， 使入射在高反光主栅线 7上的太阳光经过沟槽形的斜 面发生反射， 重新入射到 EVA层 6 (EVA中文名称是乙烯一醋酸乙烯共聚物）中， 排除光线的吸收部分 （由于 EVA层 6与玻璃层 5折射率非常相近， 均约为 1. 5， 故玻璃层 5、 EVA层 6可认为未发生界面反射）， 绝大多数反射光到达玻璃层 5、 空气界面发生反射， 这部分光线将被电池片 3 受光面有效吸收， 从而提高组件 的额定功率。 这一结构高反光主栅线 7 的构筑， 由于栅线高度较高， 对电池而 说 By constructing the high-reflection main grid line 7 on the surface of the solar cell sheet 3, it is possible to effectively utilize the illumination to high reflection. The sunlight on the surface of the main grid line 7 causes the sunlight incident on the highly reflective main grid line 7 to be reflected by the groove-shaped slope and re-incident into the EVA layer 6 (EVA Chinese name is ethylene-vinyl acetate copolymer) Excluding the absorption portion of the light (since the refractive index of the EVA layer 6 and the glass layer 5 are very similar, both are about 1.5, so the glass layer 5, the EVA layer 6 can be considered that no interface reflection occurs), and most of the reflected light reaches the glass. Layer 5, the air interface is reflected, this part of the light will be effectively absorbed by the light receiving surface of the battery sheet 3, thereby increasing the rated power of the component. The structure of the highly reflective main gate line 7 of this structure, because of the high height of the grid line, said to the battery
言提高了光电转换效率； 同时电池片 3互连时减小了外部焊带 4的使用长度， 从而减小对主栅线的覆盖， 有效降低焊接书接触电阻和焊带电阻， 从而降低组件 的串联电阻。 焊带端部的设计如图 5、 6所示。 为方便电池片 3相互之间的互连， 电池片 3的端部位置构筑的主栅线仍可 采用传统主栅线 2 (如图 1 ) 的平面化设计。 通过在顶电极的端部 7-2位置焊接 焊带 4将电池片 3的顶部电极与相邻电池片 3的背电极相焊接。 以上述依据本发明的理想实施例为启示， 通过上述的说明内容， 相关工作 人员完全可以在不偏离本项发明技术思想的范围内， 进行多样的变更以及修改。 本项发明的技术性范围并不局限于说明书上的内容， 必须要根据权利要求范围 来确定其技术性范围。 The photoelectric conversion efficiency is improved; at the same time, when the battery sheets 3 are interconnected, the use length of the outer solder ribbon 4 is reduced, thereby reducing the coverage of the main gate lines, effectively reducing the solder book contact resistance and the strip resistance, thereby reducing the components. Series resistance. The design of the end of the ribbon is shown in Figures 5 and 6. In order to facilitate the interconnection of the battery sheets 3, the main gate lines constructed at the end positions of the battery sheets 3 can still be planarized by the conventional main grid lines 2 (Fig. 1). The top electrode of the cell sheet 3 is soldered to the back electrode of the adjacent cell sheet 3 by soldering the solder ribbon 4 at the end portion 7-2 of the top electrode. In view of the above-described embodiments of the present invention, various changes and modifications may be made by those skilled in the art without departing from the scope of the invention. The technical scope of the present invention is not limited to the contents of the specification, and the technical scope thereof must be determined in accordance with the scope of the claims.

Claims

权 利 要 求 书 Claim
1、 一种具有高反光栅线的太阳电池， 包括电池片 （3)， 其特征在于： 电池 片 （3) 的表面构筑有高反光主栅线 （7) 以及与高反光主栅线 （7) 垂直的副栅 线 （1)， 所述的高反光主栅线 （7) 表面具有沟槽 （7-1)， 相邻电池片 （3) 通 过焊带 （4) 相连接， 高反光主栅线 （7) 的一端部具有用于连接焊带 （4) 的高 反光主栅线端部平表面 （7-2)。  A solar cell having a high inverse grating line, comprising a cell sheet (3), characterized in that: a surface of the cell sheet (3) is constructed with a highly reflective main gate line (7) and a highly reflective main gate line (7) a vertical sub-gate line (1), the surface of the highly reflective main gate line (7) has a trench (7-1), and the adjacent cell sheets (3) are connected by a solder ribbon (4), and the high reflective main One end of the gate line (7) has a highly reflective main gate line end flat surface (7-2) for connecting the solder ribbon (4).
PCT/CN2010/078483 2010-09-26 2010-11-06 Solar cell with high light reflecting grid line WO2012037743A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017028238A (en) * 2015-07-16 2017-02-02 有成精密股▲ふん▼有限公司 High power solar cell module

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367522B (en) * 2011-12-31 2015-07-08 英利能源（中国）有限公司 Assembly method of solar cell panel
CN103372728B (en) * 2012-04-11 2016-09-21 无锡嘉瑞光伏有限公司 The wedge shape welding rod that a kind of crystal-silicon solar cell connects
CN103985775B (en) * 2014-05-29 2016-08-24 凡登（江苏）新型材料有限公司 A kind of high-efficiency photovoltaic isomery welding
CN106653911A (en) * 2016-12-27 2017-05-10 河北君龙新能源开发有限公司 Bus bar apparatus of compound battery
EP3358630B1 (en) * 2017-02-06 2020-04-15 IMEC vzw Partially translucent photovoltaic modules and methods for manufacturing
CN110085696A (en) * 2019-04-19 2019-08-02 泰州隆基乐叶光伏科技有限公司 Solar cell piece, solar battery string and solar module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554229A (en) * 1995-02-21 1996-09-10 United Solar Systems Corporation Light directing element for photovoltaic device and method of manufacture
CN101710596A (en) * 2009-11-23 2010-05-19 宁波太阳能电源有限公司 Silicon solar battery

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4368151B2 (en) * 2003-06-27 2009-11-18 三洋電機株式会社 Solar cell module
WO2009047815A1 (en) * 2007-10-12 2009-04-16 System S.P.A. A process for connecting photovoltaic cells in series, a photovoltaic cell connectable in series using the process, and a module obtained with the process
EP2279530B1 (en) * 2008-04-11 2013-06-26 QUALCOMM MEMS Technologies, Inc. Method for improving pv aesthetics and efficiency
JP5025597B2 (en) * 2008-08-27 2012-09-12 三洋電機株式会社 Solar cell module
JP2010087060A (en) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd Solar cell module
KR20100090046A (en) * 2009-02-05 2010-08-13 엘지디스플레이 주식회사 Thin film solar cell and the method for fabricating thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554229A (en) * 1995-02-21 1996-09-10 United Solar Systems Corporation Light directing element for photovoltaic device and method of manufacture
CN101710596A (en) * 2009-11-23 2010-05-19 宁波太阳能电源有限公司 Silicon solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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