CN102299212A - Method for manufacturing crystal silicon solar cell - Google Patents
Method for manufacturing crystal silicon solar cell Download PDFInfo
- Publication number
- CN102299212A CN102299212A CN2011102987796A CN201110298779A CN102299212A CN 102299212 A CN102299212 A CN 102299212A CN 2011102987796 A CN2011102987796 A CN 2011102987796A CN 201110298779 A CN201110298779 A CN 201110298779A CN 102299212 A CN102299212 A CN 102299212A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- crystal silicon
- solar energy
- manufacture method
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the technical field of solar cell manufacturing and particularly relates to a method for manufacturing a crystal silicon solar cell. On the premise of not segmenting the solar cell, the solar cell is divided into a plurality of independent solar cell units; and during assembly encapsulation, the circuit design that the solar cell units can be connected in series or in parallel or combined as required makes the design of the solar cell more flexible.
Description
Technical field
The invention belongs to the solar cell manufacture technology field, relate in particular to a kind of crystal silicon solar energy battery manufacture method.
Background technology
At present the size of crystal silicon cell sheet is generally 125cm*125cm or 156cm*156cm, so its voltage is generally about 0.5V, and electric current is generally the 8A(156 polycrystalline), the 5.5A(125 monocrystalline) about.For meeting the different needs, electric current that obtains requiring and voltage usually need full wafer battery sheet is directly cut into littler battery sheet, carry out series-parallel combination again, and it is attractive in appearance so both to have influenced product, reduces component efficiency again.And the solar module of making at present is generally tens battery sheets and connects for obtaining higher voltage, and the series-connected cell sheet is easy to generate the hot spot phenomenon.
Summary of the invention
Purpose of the present invention provides a kind of crystal silicon solar energy battery manufacture method at above-mentioned defective exactly.This method is under the prerequisite of not cutting apart solar cell, solar cell is divided into several independently solar cell subelements, when component package, can as required the solar cell subelement be connected or circuit design in parallel or that combine, make that the design of solar cell is more flexible, reach the needed current/voltage of concrete application easily.
The technical solution used in the present invention: a kind of manufacture method of crystal silicon solar energy battery comprises following making step: the silicon chip preliminary treatment, and making herbs into wool, diffusion, emitter junction is cut apart, punching, edge insulation is made antireflective coating, silk screen printing.
The silicon chip pre-treatment step is: adopt organic washing agent such as acetone, or SC1 (ammoniacal liquor and hydrogen peroxide mixed solution) cleans to the greasy dirt of silicon chip surface, particle etc.
The making herbs into wool step for monocrystalline silicon, is used low-concentration alkali liquor, utilizes the anisotropy of silicon, makes matte; For polysilicon, use the acid solution corrosion, the defective of utilization itself is made matte.
Diffusion is mainly the making PN junction.
After the emitter junction segmentation procedure places diffusion, any operation before the printing, the mode of employing laser grooving and scribing, emitter junction zone, silicon chip front is evenly cut apart, and is divided into some unit, and the corresponding front-side unit in the silicon chip back side is cut apart.
The drilling technology step places any operation before the printing, and the punch position design is punched the silicon chip of crystalline silicon to reverse side from the front at the core of each unit of cutting apart, and the aperture is 1 micron to 50000 microns, and the hole evenly distributes on crystal silicon cell.Its purpose is for to cause the back side with front electrode, realizes the back of the body contact of battery, and carries out circuit design when being convenient to component package.
The silk screen printing step, each separated battery unit all is printed with independently front electrode and backplate on the silicon chip, and the interval is 1 micron-50000 microns between the back of the body electric field of adjacent cell, be connected with the front electrode back portion by the hole, and the front electrode of each battery unit must be in this battery cell region.
This battery is connected with the backboard that is printed with design circuit, just can obtains the solar module of required voltage, electric current.
Beneficial effect of the present invention is: the crystal silicon solar energy battery of producing with the inventive method, make the whole piece battery under the situation of not scribing, can be divided into several independently battery units, its voltage is identical, electric current is identical, can carry out circuit design, connect or the requirement on electric performance that reaches demand in parallel.Can adopt inside battery subelement series connection in the component package process, connected mode in parallel between battery and the battery afterwards, this connected mode can effectively reduce the influence of hot spot to assembly.When traditional series component partly is blocked, even a slice battery sheet is blocked, also will have a string battery sheet to lose electricity generate function, and the components of this kind structure is when being blocked, the battery sheet of the part that only is blocked loses electricity generate function, but other battery sheet operate as normal.
Description of drawings:
Figure 1 shows that the front elevation of the crystal silicon cell that the present invention makes;
Figure 2 shows that the back view of the P type crystal silicon cell of the embodiment of the invention 1;
Figure 3 shows that the side view of the P type crystal silicon cell of the embodiment of the invention 1;
Figure 4 shows that the back view of the N type crystal silicon cell of the embodiment of the invention 2;
Figure 5 shows that the side view of the N type crystal silicon cell of the embodiment of the invention 2.
Among the figure, the 1-front electrode; The 2-hole; 3-carries on the back electric field; The 4-backplate; The 5-emitter junction; The 6-silicon chip; The 7-antireflective coating.
Embodiment:
In order to understand the present invention better, describe technical scheme of the present invention in detail with instantiation below, but the present invention is not limited thereto.
The present invention is the crystal silicon solar energy battery manufacture method, is example with P type 156 polysilicon chips, and concrete steps are:
Silicon chip surface pre-treatment step: adopt organic washing agent such as acetone, or SC1 (ammoniacal liquor and hydrogen peroxide mixed solution) cleans to the greasy dirt on silicon chip 6 surfaces, particle etc.
Making herbs into wool, the way that adopts acid solution to corrode utilizes the defective of polysilicon itself to carry out making herbs into wool, cleans afterwards, carries out phosphorous diffusion, forms front emitter junction 5, obtains PN junction, the about deeply 0.2-0.3 micron of PN junction.
In the core punching 2 of each subelement, hole 2 footpath sizes are 500 microns, adopt back side corroding method to remove back side knot afterwards, with hydrofluoric acid remaining phosphorosilicate glass are removed then, make antireflective coating 7 with the method for PECVD again.
Method with silk screen printing is made electrode, is divided into three road printings, at first is that printed back electrode 4 reaches printing front electrode back portion in hole, silicon chip 6 back side 2, and electrode material is the silver slurry; Next is a printing back of the body electric field 3, and material is an aluminium paste, and the area of back of the body electric field 3 is less than the area of subelement, and two distances of carrying on the back between the electric field 3 are 500 microns; Print front electrode 1 once more, material is the silver slurry, and front electrode 1 must contact with the front electrode back portion by hole 2, and front electrode 1 can not be crossed the border of subelement.So, form the back contact solar cell sheet, this battery sheet and the backboard that is printed with circuit are encapsulated,, can realize the connection in series-parallel of battery by the design of back side circuit.
The present invention is the crystal silicon solar energy battery manufacture method, is example with N type 156 polysilicon chips, and concrete steps are:
Making herbs into wool, the way that adopts acid solution to corrode utilizes the defective of polysilicon itself to carry out making herbs into wool, cleans afterwards;
Boron diffusion is carried out in silicon chip 6 fronts, formed front emitter junction 5, obtain PN junction, the about deeply 0.2-0.3 micron of PN junction;
Phosphorous diffusion is carried out at silicon chip 6 back sides, obtained carrying on the back electric field 3;
In the core punching of each subelement, pore size is 500 microns, with hydrofluoric acid remaining phosphorosilicate glass is removed then, makes antireflective coating 7 with the method for PECVD again.
Method with silk screen printing is made electrode, is divided into the twice printing, at first is that printed back electrode 4 reaches printing front electrode back portion in hole, silicon chip 6 back side 2, and electrode material is the silver slurry; Next prints front electrode 1, and material is the silver slurry, and front electrode 1 must contact with the front electrode back portion by hole 2, and front electrode 1 can not be crossed the border of subelement.So, form the back contact solar cell sheet, this battery sheet and the backboard that is printed with circuit are encapsulated,, can realize the connection in series-parallel of battery by the design of back side circuit.
Claims (5)
1. the manufacture method of a crystal silicon solar energy battery is characterized in that, comprises following making step: the silicon chip preliminary treatment, and making herbs into wool, diffusion, emitter junction is cut apart, punching, edge insulation is made antireflective coating, silk screen printing.
2. the manufacture method of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that, after the emitter junction segmentation procedure places diffusion, any operation before the printing, adopt the mode of laser grooving and scribing, emitter junction zone, silicon chip front is evenly cut apart, and is divided into some unit, and the corresponding front-side unit in the silicon chip back side is cut apart.
3. the manufacture method of a kind of crystal silicon solar energy battery according to claim 1 is characterized in that, it is the emitter junction degree of depth that the silicon chip front-side unit is cut apart the degree of depth, and the silicon chip back side is cut apart the degree of depth and is back of the body depth of field.
4. the manufacture method of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that, the drilling technology step places any operation before the printing, the punch position design is in the core punching of each unit of cutting apart, the silicon chip of crystalline silicon is punched to reverse side from the front, the aperture is 1 micron to 50000 microns, and the hole evenly distributes on crystal silicon cell.
5. according to the manufacture method of claim 3 or 4 described a kind of crystal silicon solar energy batteries, it is characterized in that, the silk screen printing step, each separated battery unit front is printed with independently front electrode on the silicon chip, be connected with the front electrode back portion by the hole, back up has independently backplate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110298779.6A CN102299212B (en) | 2011-09-28 | 2011-09-28 | Method for manufacturing crystal silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110298779.6A CN102299212B (en) | 2011-09-28 | 2011-09-28 | Method for manufacturing crystal silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102299212A true CN102299212A (en) | 2011-12-28 |
| CN102299212B CN102299212B (en) | 2014-09-24 |
Family
ID=45359501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110298779.6A Active CN102299212B (en) | 2011-09-28 | 2011-09-28 | Method for manufacturing crystal silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102299212B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709377A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | New-structure crystalline silicon solar battery and preparation method thereof |
| CN102779862A (en) * | 2012-08-08 | 2012-11-14 | 苏州阿特斯阳光电力科技有限公司 | Back-side electrode structure of back-contact solar cell and manufacture method of back electrode structure |
| CN102956746A (en) * | 2012-10-31 | 2013-03-06 | 常州天合光能有限公司 | Manufacturing method of metallization wrap-through (MWT) battery |
| CN103545385A (en) * | 2012-07-09 | 2014-01-29 | 苏州阿特斯阳光电力科技有限公司 | Solar cell component, solar cell piece and manufacturing method thereof |
| CN104321881A (en) * | 2013-05-20 | 2015-01-28 | 韩国生产技术研究院 | Solar cell and method for manufacturing same |
| CN105428461A (en) * | 2015-12-18 | 2016-03-23 | 四川钟顺太阳能开发有限公司 | Production process for medium-low-power concentrator solar cell and solar cell piece |
| CN109378348A (en) * | 2018-11-19 | 2019-02-22 | 苏州捷运昇能源科技有限公司 | A kind of solar battery sheet and solar cell module |
| CN110707171A (en) * | 2019-10-24 | 2020-01-17 | 荣马实业有限公司 | MWT back contact type efficient photovoltaic cell and production process |
| CN112909132A (en) * | 2021-03-22 | 2021-06-04 | 江苏赛拉弗光伏系统有限公司 | Preparation method of single crystalline silicon solar cell capable of increasing output voltage |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101710596A (en) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | Silicon solar battery |
| CN101894888A (en) * | 2010-07-16 | 2010-11-24 | 山东力诺太阳能电力股份有限公司 | Solar cell manufacturing process for blocking back diffusion by using mask |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
| WO2011029640A2 (en) * | 2009-09-10 | 2011-03-17 | Q-Cells Se | Solar cell |
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN201966219U (en) * | 2010-12-21 | 2011-09-07 | 苏州阿特斯阳光电力科技有限公司 | N type silicon solar cell |
-
2011
- 2011-09-28 CN CN201110298779.6A patent/CN102299212B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011029640A2 (en) * | 2009-09-10 | 2011-03-17 | Q-Cells Se | Solar cell |
| CN101710596A (en) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | Silicon solar battery |
| CN101894888A (en) * | 2010-07-16 | 2010-11-24 | 山东力诺太阳能电力股份有限公司 | Solar cell manufacturing process for blocking back diffusion by using mask |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
| CN201966219U (en) * | 2010-12-21 | 2011-09-07 | 苏州阿特斯阳光电力科技有限公司 | N type silicon solar cell |
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709377A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | New-structure crystalline silicon solar battery and preparation method thereof |
| CN102709377B (en) * | 2012-05-08 | 2015-07-15 | 常州天合光能有限公司 | New-structure crystalline silicon solar battery and preparation method thereof |
| CN103545385A (en) * | 2012-07-09 | 2014-01-29 | 苏州阿特斯阳光电力科技有限公司 | Solar cell component, solar cell piece and manufacturing method thereof |
| CN102779862A (en) * | 2012-08-08 | 2012-11-14 | 苏州阿特斯阳光电力科技有限公司 | Back-side electrode structure of back-contact solar cell and manufacture method of back electrode structure |
| CN102779862B (en) * | 2012-08-08 | 2015-08-26 | 苏州阿特斯阳光电力科技有限公司 | Back electrode structure of a kind of back contact silicon solar battery sheet and preparation method thereof |
| CN102956746A (en) * | 2012-10-31 | 2013-03-06 | 常州天合光能有限公司 | Manufacturing method of metallization wrap-through (MWT) battery |
| CN104321881A (en) * | 2013-05-20 | 2015-01-28 | 韩国生产技术研究院 | Solar cell and method for manufacturing same |
| CN104321881B (en) * | 2013-05-20 | 2017-06-09 | 韩国生产技术研究院 | Solar cell and its manufacture method |
| CN105428461A (en) * | 2015-12-18 | 2016-03-23 | 四川钟顺太阳能开发有限公司 | Production process for medium-low-power concentrator solar cell and solar cell piece |
| CN109378348A (en) * | 2018-11-19 | 2019-02-22 | 苏州捷运昇能源科技有限公司 | A kind of solar battery sheet and solar cell module |
| CN110707171A (en) * | 2019-10-24 | 2020-01-17 | 荣马实业有限公司 | MWT back contact type efficient photovoltaic cell and production process |
| CN112909132A (en) * | 2021-03-22 | 2021-06-04 | 江苏赛拉弗光伏系统有限公司 | Preparation method of single crystalline silicon solar cell capable of increasing output voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102299212B (en) | 2014-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102299212B (en) | Method for manufacturing crystal silicon solar cell | |
| US9515217B2 (en) | Monolithically isled back contact back junction solar cells | |
| US9379258B2 (en) | Fabrication methods for monolithically isled back contact back junction solar cells | |
| CN102938432B (en) | A kind of preparation method of MWT solar module | |
| CN100576580C (en) | The post produced velvet production process of solar cell | |
| CN109888045B (en) | Novel double-sided PERC (PERC) laminated tile battery piece and preparation method thereof | |
| WO2014127067A1 (en) | Monolithically isled back contact back junction solar cells using bulk wafers | |
| CN104835874B (en) | A kind of manufacture method of half-cell piece photovoltaic module | |
| CN102610666A (en) | MWT (metal wrap through) back-contact solar cell, preparation method and module thereof | |
| CN102403373A (en) | Solar cell slice, solar cell string and solar cell module | |
| CN102386254A (en) | Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof | |
| CN110212056A (en) | It is sliced the preparation method of solar battery sheet | |
| CN105428461A (en) | Production process for medium-low-power concentrator solar cell and solar cell piece | |
| CN102403374A (en) | Solar cell plate, solar cell string and solar cell assembly | |
| CN109585600A (en) | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC | |
| CN102280519A (en) | Process for preparing high-efficient full back electrode n type solar cell with utilization of boron-phosphorus codiffusion | |
| CN107785457A (en) | A kind of manufacture craft of the two-sided crystal silicon solar battery of p-type | |
| CN110112230A (en) | A kind of preparation method of MWT solar battery | |
| CN108963006A (en) | A kind of solar battery and preparation method thereof and cell piece and photovoltaic module based on it | |
| CN102683437A (en) | Solar cell electrode structure and solar cell series connection method | |
| CN102244136A (en) | Method for preparing interdigital back contact double-sided solar cell | |
| JP2009266870A (en) | Back electrode type solar cell and solar cell module | |
| CN106876486A (en) | The group string attachment structure of P-type crystal silicon back contacts double-side cell, component and method | |
| CN201796897U (en) | Front contact structure of crystalline silicon solar cell | |
| CN202307923U (en) | Crystalline silica solar cell structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |