CN102244136A - Method for preparing interdigital back contact double-sided solar cell - Google Patents
Method for preparing interdigital back contact double-sided solar cell Download PDFInfo
- Publication number
- CN102244136A CN102244136A CN2010101755994A CN201010175599A CN102244136A CN 102244136 A CN102244136 A CN 102244136A CN 2010101755994 A CN2010101755994 A CN 2010101755994A CN 201010175599 A CN201010175599 A CN 201010175599A CN 102244136 A CN102244136 A CN 102244136A
- Authority
- CN
- China
- Prior art keywords
- crystal silicon
- double
- sided solar
- battery sheet
- silicon battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing an interdigital back contact double-sided solar cell, which comprises the following steps of: carrying out cleaning and texturing on a crystal silicon cell plate; carrying out light diffusion and junction making on the textured crystal silicon cell plate; carrying out thermal oxidation on the crystal silicon cell plate subjected to light diffusion and junction making; slotting and perforating on the crystal silicon cell plate; carrying out heavy diffusion in a crystal silicon cell plate slot region; carrying out surface passivation to prepare an antireflection film; slotting again by laser; and preparing an electrode. The high-efficiency solar cell prepared by using the method has the advantages that the electrode is prepared once and the operation steps are simple. Double surfaces of the interdigital back contact double-sided solar cell can be irradiated by daylight and the interdigital back contact double-sided solar cell has the advantages of high open-circuit voltage, large short-circuit current and high conversion efficiency. Moreover, the method is simple in production process and easy for industrialization.
Description
Technical field
The present invention relates to the crystal silicon solar batteries technical field, relate in particular to a kind of method for preparing interdigital back of the body contact double-sided solar battery.
Background technology
For satisfying human growing life requirement, more and more to the demand of the energy, the energy extraction utilization day by day aggravates.Fossil energy such as oil and coal not only reserves is limited, is about to exploitation totally, and because the exploitation utilization of fossil energy, the earth environment that the mankind are depended on for existence has caused very big destruction, is directly threatening human existence.Therefore, it is extremely urgent to solve human existence and development problem to seek the new energy.
In the known energy, have the solar radiant energy aboundresources only, widely distributed, be not subjected to the restriction in region and season, and have the characteristics of cleaning, be the alternative energy source of the tool potentiality of traditional fossil energy.Since first commercialization silicon solar cell of Bell Laboratory came out, solar cell developed into present third generation high performance solar batteries from the monocrystaline silicon solar cell of the first generation, and its cost of manufacture progressively reduces, and conversion efficiency improves constantly.
Shortcomings such as it is not very high (scale of mass production can reach 17%) that though crystal silicon battery has conversion efficiency, cost an arm and a leg, but crystal silicon battery has still accounted for the market share more than 90% at present, therefore the reduction of cost of electricity-generating, except that depending on the prices of raw and semifnished materials, the more important thing is the conversion efficiency that improves existing battery.The means of conventional raising crystal silicon solar batteries efficient are varied, and as constituency emission, back of the body surface field, surface passivation etc., but these technology continue to promote the limited in one's ability of solar battery efficiency.Therefore, explore new principle, attempt new material, use the attention that conversion efficiency that new structure improves crystal silicon battery more and more is subjected to the research staff instead.The present invention proposes under this background just.
Summary of the invention
(1) technical problem that will solve
Main purpose of the present invention provide a kind of can absorption solar energy as much as possible, improve the preparation method of the interdigital back of the body contact double-sided solar battery of conversion efficiency.
(2) technical scheme
For achieving the above object, the invention provides a kind of method for preparing interdigital back of the body contact double-sided solar battery, this method comprises:
Step 1: the crystal silicon battery sheet is carried out cleaning and texturing;
Step 2: the system knot is gently expanded on the crystal silicon battery sheet surface after making herbs into wool;
Step 3: the crystal silicon battery sheet behind the light expansion system knot is carried out thermal oxidation;
Step 4: paddle-tumble punching on the crystal silicon battery sheet;
Step 5: the district heavily expands at the crystal silicon battery film trap;
Step 6: surface passivation prepares antireflective film;
Step 7: laser is slotted once more;
Step 8: preparation electrode.
In the such scheme, described in the step 1 the crystal silicon battery sheet is carried out cleaning and texturing, in alkaline solution or acid solution, carry out; Described crystal silicon battery sheet is the small size fragment, or 125 monocrystalline silicon pieces or 156 polysilicon chips that use in producing.
In the such scheme, the described cleaning and texturing that carries out in alkaline solution specifically comprises: adopt prepared NaOH, Na by a certain percentage
2SiO
3With the absolute ethyl alcohol mixed liquor crystal silicon battery sheet is carried out anisotropic etch, in the evenly making herbs into wool of crystal silicon battery sheet surface, suede structure presents traditional pyramid.
In the such scheme, system knot is gently expanded on the crystal silicon battery sheet surface described in the step 2 after making herbs into wool, comprising: the crystal silicon battery sheet that will have a suede structure is inserted in the diffusion furnace and is spread, and diffuse source is liquid POCl
3, diffuse out the PN junction that junction depth is 200～500nm, reach surperficial square resistance 30～60 Ω/ through light the expansion.
In the such scheme, described in the step 3 the crystal silicon battery sheet behind the light expansion system knot is carried out thermal oxidation, adopt dry oxidation or wet oxidation, forming thickness is the SiO of 30～300nm
2Diaphragm.
In the such scheme, paddle-tumble punching on the crystal silicon battery sheet comprises: carrying out having SiO after the thermal oxidation described in the step 4
2Paddle-tumble, punching on the crystal silicon battery sheet of diaphragm so that implement the constituency emission, and connect together double-face electrode.
In the such scheme, described paddle-tumble adopts laser, mechanical mark or corroding method to realize.
In the such scheme, further comprise between step 4 and the step 5: the crystal silicon battery sheet is placed alkaline polishing solution, remove surface damage, place the superfluous alkali of acid solution neutralization then.
In the such scheme, heavily expanding in crystal silicon battery film trap district described in the step 5, is to utilize phosphorus oxychloride to diffuse to form PN junction in crystal silicon battery film trap district, reaches surperficial square resistance 20～45 Ω/ through heavily expanding.
In the such scheme, further comprise between step 5 and the step 6: utilize the hybrid corrosion liquid of certain density HF acid, HCl acid and water to remove the phosphorosilicate glass that forms in the diffusion process.
In the such scheme, surface passivation described in the step 6 prepares antireflective film, is to form SiO at crystal silicon battery sheet surface deposition SiN film
2Layer and the compound antireflective film of SiN layer.
In the such scheme, laser described in the step 7 is slotted or mechanical slotting once more, is in order to expose the positive electrode figure.
In the such scheme, the electrode of preparation described in the step 8 is to adopt electro-plating method, also can use silk screen printing or evaporation coating method, and the electrode of preparation is silver electrode or composition metal electrode.
In the such scheme, described employing evaporation coating method prepares electrode, is to adopt an electroplated electrode, and alloy temperature is 350～900 ℃ under the nitrogen protection, and the alloy time is 10～60 seconds.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
The method of the interdigital back of the body contact of preparation provided by the invention double-sided solar battery, the two-sided crystal silicon solar batteries work of interdigital back-contact of adopting the two poles of the earth to connect can be caught sunlight to greatest extent, reaches aim of efficient conversion; Adopt electroplated electrode have processing step simple, can with existing process compatible, be easy to the characteristics of industrialization.
Description of drawings
Fig. 1 is the method flow diagram of the interdigital back of the body contact of preparation provided by the invention double-sided solar battery;
Fig. 2 carries out battery sheet schematic diagram after surface clean, the making herbs into wool according to the embodiment of the invention;
Fig. 3 gently expands the battery schematic diagram that phosphorosilicate glass is removed in system knot back according to the embodiment of the invention;
Fig. 4 is the battery chip architecture schematic diagram that carries out the surface heat oxidation according to the embodiment of the invention;
Fig. 5 be according to the embodiment of the invention carry out laser grooving/boring, remove surface damage, battery sheet schematic diagram after the pickling;
Fig. 6 carries out in the groove heavily dopedly according to the embodiment of the invention, remove the battery schematic diagram of phosphorosilicate glass;
Fig. 7 prepares battery schematic diagram behind the SiN antireflective film according to the embodiment of the invention;
Fig. 8 carries out laser battery schematic diagram after the cutting once more according to the embodiment of the invention;
Fig. 9 carries out disposable electroplated electrode schematic diagram according to the embodiment of the invention;
Figure 10 be according to the embodiment of the invention cut edge, battery schematic diagram after the electrode isolation.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Different with traditional crystal silicon battery is that the present invention adopts interdigital back of the body contact mode that three utmost points connection of battery is kept to the two poles of the earth connection, makes things convenient for module to connect; Adopt one time electroplated electrode, step simplifies the operation.It is simple that this method has technology of preparing, can realize scale of mass production under the existing equipment condition, reaches and raise the efficiency, the purpose that reduces cost.
As shown in Figure 1, Fig. 1 is the method flow diagram of the interdigital back of the body contact of preparation provided by the invention double-sided solar battery, and this method comprises:
Step 1: the crystal silicon battery sheet is carried out cleaning and texturing;
Step 2: the system knot is gently expanded on the crystal silicon battery sheet surface after making herbs into wool;
Step 3: the crystal silicon battery sheet behind the light expansion system knot is carried out thermal oxidation;
Step 4: paddle-tumble punching on the crystal silicon battery sheet;
Step 5: the district heavily expands at the crystal silicon battery film trap;
Step 6: surface passivation prepares antireflective film;
Step 7: laser is slotted once more;
Step 8: preparation electrode.
Wherein, described in the step 1 the crystal silicon battery sheet is carried out cleaning and texturing, in alkaline solution or acid solution, carry out; Described crystal silicon battery sheet is the small size fragment, or 125 monocrystalline silicon pieces or 156 polysilicon chips that use in producing.The described cleaning and texturing that carries out in alkaline solution specifically comprises: adopt prepared NaOH, Na by a certain percentage
2SiO
3With the absolute ethyl alcohol mixed liquor crystal silicon battery sheet is carried out anisotropic etch, in the evenly making herbs into wool of crystal silicon battery sheet surface, suede structure presents traditional pyramid.
System knot is gently expanded on crystal silicon battery sheet surface described in the step 2 after making herbs into wool, comprising: the crystal silicon battery sheet that will have a suede structure is inserted in the diffusion furnace and is spread, and diffuse source is liquid POCl
3, diffuse out the PN junction that junction depth is 200～500nm, reach surperficial square resistance 30～60 Ω/ through light the expansion.
Described in the step 3 the crystal silicon battery sheet behind the light expansion system knot is carried out thermal oxidation, adopt dry oxidation or wet oxidation, forming thickness is the SiO of 30～300nm
2Diaphragm.
Paddle-tumble punching on the crystal silicon battery sheet comprises: carrying out having SiO after the thermal oxidation described in the step 4
2Paddle-tumble, punching on the crystal silicon battery sheet of diaphragm so that implement the constituency emission, and connect together double-face electrode.Described paddle-tumble adopts laser, mechanical mark or corroding method to realize.
Further comprise between step 4 and the step 5: the crystal silicon battery sheet is placed alkaline polishing solution, remove surface damage, place the superfluous alkali of acid solution neutralization then.
Heavily expanding in crystal silicon battery film trap district described in the step 5, is to utilize phosphorus oxychloride to diffuse to form PN junction in crystal silicon battery film trap district, reaches surperficial square resistance 20～45 Ω/ through heavily expanding.
Further comprise between step 5 and the step 6: utilize the hybrid corrosion liquid of certain density HF acid, HCl acid and water to remove the phosphorosilicate glass that forms in the diffusion process.
Surface passivation described in the step 6 prepares antireflective film, is to form SiO at crystal silicon battery sheet surface deposition SiN film
2Layer and the compound antireflective film of SiN layer.
Laser described in the step 7 is slotted or mechanical slotting once more, is in order to expose the positive electrode figure.
The electrode of preparation described in the step 8 is to adopt electroplated electrode, also can adopt silk screen printing or evaporation coating method, and the electrode of preparation is silver electrode or composition metal electrode.Described employing evaporation coating method prepares electrode, comprising: an electroplated electrode, and alloy temperature is 350～900 ℃ under the nitrogen protection, the alloy time is 10～60 seconds.
Based on the method for the interdigital back of the body contact of preparation shown in Figure 1 double-sided solar battery, Fig. 2 to Figure 10 shows the method flow diagram according to the interdigital back of the body contact of the preparation of embodiment of the invention double-sided solar battery.
Fig. 2 carries out battery sheet schematic diagram after surface clean, the making herbs into wool according to the embodiment of the invention.The crystal silicon battery sheet that step 201 is chosen is commercial 125 monocrystalline or 156 polycrystalline, and substrate type is a P type substrate; Monocrystalline resistivity is 0.5～3 Ω cm, and polycrystalline resistivity is 0.5～6 Ω cm, at first the battery sheet is cleaned; Step 202 is that the crystal silicon battery sheet of 100～250 μ m is inserted prepared NaOH, Na by a certain percentage with thickness
2SiO
3In the absolute ethyl alcohol mixed liquor, erode away the anisotropy matte in the crystal silicon surface chemistry, the matte shape is inverted pyramid shape.
Fig. 3 gently expands the battery schematic diagram that phosphorosilicate glass is removed in system knot back according to the embodiment of the invention. step 301, and with in HCL/HF acid, the neutralize alkali of surplus of the battery sheet after the making herbs into wool.Step 302, the battery sheet that will have suede structure is inserted in the diffusion furnace, spreads.Method of diffusion adopts conventional diffusion technology, and diffuse source is liquid POCl
3Diffuse out the PN junction of the about 200～500nm of junction depth, the square resistance after the diffusion is about 30～60 Ω/.Step 303 adopts the hybrid corrosion liquid of HF acid, HCl acid and water to remove the phosphorosilicate glass that forms in the diffusion process, and washed with de-ionized water oven dry back is standby.
Fig. 4 is the battery chip architecture schematic diagram that carries out the surface heat oxidation according to the embodiment of the invention.Sample is inserted in the oxidation furnace, take dry oxidation/wet oxidation under 700 ℃～1100 ℃ temperature, obtain the SiO of thickness 30～300nm
2Film.
Fig. 5 be according to the embodiment of the invention carry out laser grooving/boring, remove surface damage, battery sheet schematic diagram after the pickling.Step 501, use laser mark the shallow slot of interdigitated at the back side of the battery sheet of oxidized silicon protection, groove depth 5～80 μ m, and groove width 10～180 μ m are so that the emission of preparation constituency; Step 502 is bored open-work, aperture 5～180 μ m at the groove inner laser; Step 503 is polished in 10%～50%NaOH/KOH alkaline polishing solution, the treatment surface damage.Step 504, the superfluous alkali of neutralization in 1%～30%HCL acid.
Fig. 6 carries out in the groove heavily dopedly according to the embodiment of the invention, remove the battery schematic diagram of phosphorosilicate glass.Step 601 is inserted the battery sheet in the diffusion furnace once more, carries out the groove district and heavily spreads, and the square resistance after the diffusion is about 20～45 Ω/; Step 602 adopts the hybrid corrosion liquid of HF acid, HCl acid and water to remove the phosphorosilicate glass that forms in the diffusion process, and washed with de-ionized water oven dry back is standby.
Fig. 7 prepares battery schematic diagram behind the SiN antireflective film according to the embodiment of the invention.Step 701 is thinned to 10～40nm with the sample surfaces oxide-film; Step 702, the thick SiN film of PECVD deposition 10～100nm forms compound antireflective film under certain power condition.
Fig. 8 carries out laser battery schematic diagram after the cutting once more according to the embodiment of the invention.Lbg exposes the positive electrode zone once more.
Fig. 9 carries out disposable electroplated electrode schematic diagram according to the embodiment of the invention.Disposable plated metal positive and negative electrode, and electrode is carried out alloying at 350～900 ℃.
Figure 10 be according to the embodiment of the invention cut edge, battery schematic diagram after the electrode isolation.Use laser is cut edge, electrode isolation forms interdigital back of the body contact double-sided solar battery.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1. one kind prepares the method that the interdigital back of the body contacts double-sided solar battery, it is characterized in that this method comprises:
Step 1: the crystal silicon battery sheet is carried out cleaning and texturing;
Step 2: the system knot is gently expanded on the crystal silicon battery sheet surface after making herbs into wool;
Step 3: the crystal silicon battery sheet behind the light expansion system knot is carried out thermal oxidation;
Step 4: paddle-tumble punching on the crystal silicon battery sheet;
Step 5: the district heavily expands at the crystal silicon battery film trap;
Step 6: surface passivation prepares antireflective film;
Step 7: laser is slotted once more;
Step 8: preparation electrode.
2. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that, described in the step 1 the crystal silicon battery sheet is carried out cleaning and texturing, carries out in alkaline solution or acid solution; Described crystal silicon battery sheet is the small size fragment, or 125 monocrystalline silicon pieces or 156 polysilicon chips that use in producing.
3. the method for the interdigital back of the body contact of preparation according to claim 2 double-sided solar battery is characterized in that the described cleaning and texturing that carries out specifically comprises in alkaline solution:
Adopt prepared NaOH, Na by a certain percentage
2SiO
3With the absolute ethyl alcohol mixed liquor crystal silicon battery sheet is carried out anisotropic etch, in the evenly making herbs into wool of crystal silicon battery sheet surface, suede structure presents traditional pyramid.
4. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that the system knot is gently expanded on the crystal silicon battery sheet surface described in the step 2 after making herbs into wool, comprising:
The crystal silicon battery sheet that will have a suede structure is inserted in the diffusion furnace and is spread, and diffuse source is liquid POCl
3, diffuse out the PN junction that junction depth is 200～500nm, reach surperficial square resistance 30～60 Ω/ through light the expansion.
5. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery, it is characterized in that, described in the step 3 the crystal silicon battery sheet behind the light expansion system knot is carried out thermal oxidation, adopt dry oxidation or wet oxidation, forming thickness is the SiO of 30～300nm
2Diaphragm.
6. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that, paddle-tumble punching on the crystal silicon battery sheet described in the step 4 comprises:
Carrying out having SiO after the thermal oxidation
2Paddle-tumble, punching on the crystal silicon battery sheet of diaphragm so that implement the constituency emission, and connect together double-face electrode.
7. the method for the interdigital back of the body contact of preparation according to claim 6 double-sided solar battery is characterized in that described paddle-tumble adopts laser, mechanical mark or corroding method to realize.
8. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that, further comprises between step 4 and the step 5:
The crystal silicon battery sheet is placed alkaline polishing solution, remove surface damage, place the superfluous alkali of acid solution neutralization then.
9. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery, it is characterized in that, heavily expand in crystal silicon battery film trap district described in the step 5, be to utilize phosphorus oxychloride to diffuse to form PN junction, reach surperficial square resistance 20～45 Ω/ through heavily expanding in crystal silicon battery film trap district.
10. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that, further comprises between step 5 and the step 6:
Utilize the hybrid corrosion liquid of certain density HF acid, HCl acid and water to remove the phosphorosilicate glass that forms in the diffusion process.
11. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that surface passivation described in the step 6 prepares antireflective film, is to form SiO at crystal silicon battery sheet surface deposition SiN film
2Layer and the compound antireflective film of SiN layer.
12. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery is characterized in that laser described in the step 7 is slotted or mechanical slotting once more, is in order to expose the positive electrode figure.
13. the method for the interdigital back of the body contact of preparation according to claim 1 double-sided solar battery, it is characterized in that, the electrode of preparation described in the step 8 is to adopt electro-plating method, perhaps uses silk screen printing or evaporation coating method, and the electrode of preparation is silver electrode or composition metal electrode.
14. the method for the interdigital back of the body contact of preparation according to claim 13 double-sided solar battery; it is characterized in that described employing electro-plating method prepares electrode, is to adopt an electroplated electrode; alloy temperature is 350～900 ℃ under the nitrogen protection, and the alloy time is 10～60 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101755994A CN102244136A (en) | 2010-05-12 | 2010-05-12 | Method for preparing interdigital back contact double-sided solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101755994A CN102244136A (en) | 2010-05-12 | 2010-05-12 | Method for preparing interdigital back contact double-sided solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102244136A true CN102244136A (en) | 2011-11-16 |
Family
ID=44962086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101755994A Pending CN102244136A (en) | 2010-05-12 | 2010-05-12 | Method for preparing interdigital back contact double-sided solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102244136A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569518A (en) * | 2012-01-17 | 2012-07-11 | 杨正刚 | Production process of N-type back contact solar cell |
| CN102938370A (en) * | 2012-11-16 | 2013-02-20 | 海南英利新能源有限公司 | Solar cell and diffusion method thereof |
| CN103367539A (en) * | 2013-06-26 | 2013-10-23 | 英利集团有限公司 | Manufacturing method of IBC (Interdigitated Back Contact) solar cell and IBC solar cell |
| CN103681972A (en) * | 2013-12-25 | 2014-03-26 | 上海华友金裕微电子有限公司 | Preparation method of solar cell with electroplated silver electrodes |
| CN105489666A (en) * | 2016-01-12 | 2016-04-13 | 山东联星能源集团有限公司 | System and method for preparing solar cell electrode by inkjet 3D printing |
| CN106653939A (en) * | 2016-11-17 | 2017-05-10 | 横店集团东磁股份有限公司 | Thermal oxidation technology applied to crystalline silicon solar cell |
| CN112993064A (en) * | 2021-05-20 | 2021-06-18 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369612A (en) * | 2008-10-10 | 2009-02-18 | 湖南大学 | Production method for implementing selective emitter solar battery |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN101533871A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Selective diffusion technology for crystalline silicon solar cell |
-
2010
- 2010-05-12 CN CN2010101755994A patent/CN102244136A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369612A (en) * | 2008-10-10 | 2009-02-18 | 湖南大学 | Production method for implementing selective emitter solar battery |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN101533871A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Selective diffusion technology for crystalline silicon solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 任丙彦 等: "背接触硅太阳电池研究进展", 《材料导报》, vol. 22, no. 9, 30 September 2008 (2008-09-30) * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569518A (en) * | 2012-01-17 | 2012-07-11 | 杨正刚 | Production process of N-type back contact solar cell |
| CN102938370A (en) * | 2012-11-16 | 2013-02-20 | 海南英利新能源有限公司 | Solar cell and diffusion method thereof |
| CN102938370B (en) * | 2012-11-16 | 2016-06-29 | 海南英利新能源有限公司 | A kind of solar battery sheet and method of diffusion thereof |
| CN103367539A (en) * | 2013-06-26 | 2013-10-23 | 英利集团有限公司 | Manufacturing method of IBC (Interdigitated Back Contact) solar cell and IBC solar cell |
| CN103367539B (en) * | 2013-06-26 | 2015-09-09 | 英利集团有限公司 | The manufacture method of IBC solar cell and IBC solar cell |
| CN103681972A (en) * | 2013-12-25 | 2014-03-26 | 上海华友金裕微电子有限公司 | Preparation method of solar cell with electroplated silver electrodes |
| CN105489666A (en) * | 2016-01-12 | 2016-04-13 | 山东联星能源集团有限公司 | System and method for preparing solar cell electrode by inkjet 3D printing |
| CN106653939A (en) * | 2016-11-17 | 2017-05-10 | 横店集团东磁股份有限公司 | Thermal oxidation technology applied to crystalline silicon solar cell |
| CN106653939B (en) * | 2016-11-17 | 2018-03-27 | 横店集团东磁股份有限公司 | A kind of thermal oxidation technology applied to crystal silicon solar batteries |
| CN112993064A (en) * | 2021-05-20 | 2021-06-18 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN112993064B (en) * | 2021-05-20 | 2021-07-30 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103904164B (en) | Preparation method for N-shaped back-junction solar cell | |
| CN201699033U (en) | Two-sided illuminated crystalline silicon solar battery | |
| CN102244136A (en) | Method for preparing interdigital back contact double-sided solar cell | |
| CN201112399Y (en) | Solar energy battery with condensed-boron condensed-phosphorus diffusion structure | |
| CN101017858A (en) | A back contact solar battery and its making method | |
| CN102487105A (en) | Method for preparing high efficiency solar cell with stereostructure | |
| CN109473492A (en) | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production | |
| CN104269457A (en) | n-type IBC silicon solar cell manufacturing method based on ion implantation technology | |
| CN110061072A (en) | A kind of TBC solar battery structure and preparation method thereof | |
| CN102280519A (en) | Process for preparing high-efficient full back electrode n type solar cell with utilization of boron-phosphorus codiffusion | |
| CN102683496B (en) | Preparation method of N-type double-sided back contact solar cell | |
| CN103646992A (en) | Preparation method of P-type crystal silicon double-sided cell | |
| CN101882643B (en) | Method for manufacturing crystalline silicon high-efficiency solar cell | |
| CN203812893U (en) | N-type back-junction solar cell | |
| CN109585600A (en) | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC | |
| CN102623563A (en) | Manufacturing method for double-face illuminated crystalline silicon solar cell | |
| CN103594530A (en) | Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof | |
| CN103050573B (en) | A kind of preparation method carrying on the back passivation cell | |
| CN104716209A (en) | Solar cell based on silicon substrate nanowire and preparing method thereof | |
| CN102709389B (en) | Method for preparing double-faced back contact solar cell | |
| CN104009120B (en) | The preparation method of N-type crystalline silicon grooving and grid burying battery | |
| CN105742402A (en) | Preparation method of laminated solar battery, and structure of lamination solar battery | |
| CN209056506U (en) | It is suitble to the MWT hetero-junction silicon solar cell of scale volume production | |
| CN204497251U (en) | A kind of high-efficiency N-type double-side solar cell | |
| CN203491268U (en) | Novel double-sensitive-surface solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111116 |