CN102386254A - Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof - Google Patents
Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof Download PDFInfo
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Abstract
The invention provides a metal wrap through (MWT) back contact solar cell, a preparation method and an assembly thereof, and belongs to the field of photovoltaic technologies. The solar cell comprises a first conductive type region and a second conductive type region in a cell substrate, a secondary grid line formed on the front side of the cell substrate, a through hole passing through the cell substrate, a main grid electrode on the back of the cell substrate, a second electrode on the back of the cell substrate, and an isolation channel, wherein the second electrode is used for carrying out self-alignment compensation doping on the second conductive type region in contact with the second electrode, and the current generated when the first conductive type region passes is output to the second electrode through the self-alignment compensation doped second conductive type region. The preparation method comprises the following steps of: forming the secondary grid line on the front side of the cell substrate by composition, forming the main grid electrode and the second electrode on the back of the cell substrate by composition, and performing self-alignment compensation doping on the second conductive type region in contact with the second electrode. Therefore, the method for preparing the back contact solar cell is simple and low in cost.
Description
Technical field
The invention belongs to the photovoltaic technology field, be specifically related to metal around wearing type (Metal Wrap Through, MWT) back of the body contact solar cell, preparation method and assembly thereof.
Background technology
Because the finiteness that conventional energy resource is supplied with and the increase of environmental protection pressure; Many in the world countries have started the upsurge of development and use solar energy and regenerative resource at present; Solar utilization technique has obtained fast development, wherein utilizes utilization that semi-conductive photovoltaic effect changes solar energy into electric energy more and more widely.And solar cell is exactly that wherein general to be used to solar energy converting be the device of electric energy.In practical application, generally be as basic applying unit with the battery component that forms by a plurality of solar cells series connection (being connected in series) with the interconnector welding.
Normally, solar cell comprises pn knot, and the inside photogenerated current that produces because of shining upon in its cell substrate (like crystalline silicon) need be collected and it is compiled and draw through the electrode of battery.Solar cell comprises the front and the back side, is defined as the front of solar cell when wherein battery operated by the one side that sunlight shone, and the one side opposite with this front is defined as the back side.Routinely, be formed for the secondary grid line (or inferior grid line) of collected current and the main grid electrode that is used to compile electric current on the secondary grid line in its front; On its back side, form backplate with projected current.
Along with the solar cell development, proposed the main grid electrode of battery front side is placed the back of the body contact-type solar cell at the cell substrate back side in recent years.Than conventional solar cell, the solar cell of back of the body contact-type has the following advantages at least: the firstth, and, the solar cell of back of the body contact-type has higher conversion efficiency because of having eliminated front main grid electrode pair irradiation of sunlight obstruction loss (the shading area reduces); The secondth,, main grid electrode and backplate all are formed at (on the back side) on the same surface, therefore be equipped to battery component more easily between a plurality of batteries, cost of manufacture is lower; The 3rd is, the main grid electrode places the back side to make battery have outward appearance more uniformly, the battery component of prepared formation (attractive in appearance is important for some application, and for example BIPV is used) more attractive in appearance relatively.
Wherein, metal is a kind of in the back of the body contact solar cell around the type of wearing, and in this battery, forms a plurality of through holes in the cell substrate, is connected with the main grid electrode electricity that is arranged on cell backside through the secondary grid line of through hole with the front.U.S. Patent number is US6,384, a kind of metal is specifically disclosed in patent 317B1, that be entitled as " solar cell and preparation method thereof (Solar Cell and Process of Manufacturing the Same) " around the back of the body contact solar cell of wearing type.
Metal for prior art shown in Figure 1 is carried on the back the structural representation of contact solar cell around wearing type.This battery is open by patent mentioned above.As shown in Figure 1,10 for being formed at the positive secondary grid line of cell substrate, and main grid electrode 9 is formed at the cell substrate back side, and secondary grid line and main grid electrode are electrically connected through through hole, and backplate 6 also is formed at the cell substrate back side.Backplate 6 is used to draw the electric current that first semiconductor type zone 7 of cell substrate is produced, and secondary grid line and main grid electrode 9 are used to draw the electric current that second semiconductor type regional 8 of cell substrate is produced.After avoiding the backplate 6 and first semiconductor type zone 7 to form ohmic contact, cause the battery plus-negative plate short circuit; Usually reserved the zone of exposing in first semiconductor type zone 7 at 8 o'clock overleaf in formation second semiconductor type zone, with the backplate of composition formation therein.Form second semiconductor type zone 8 o'clock at diffusing, doping like this, need extra mask photoetching composition, and after diffusion, again mask is removed complex technical process.Thereby be unfavorable for reducing the cost of solar cell.In addition, in patent US6,384; Among the disclosed embodiment of 317B1; As shown in Figures 2 and 3, at secondary grid line and the main grid electrode place that is electrically connected, all connect through single through hole 3; So using silk-screen printing technique in through hole during the printing conductive slurry, can not fill up the main grid electrode that through hole causes being positioned at the back side fully and can not form effective electrical connection with the secondary grid line that is arranged at battery front side and make series resistance become big than being easier to occur slurry.
So to the defective of prior art, need that a kind of cost of manufacture of research and development is low, technology simple, the contact good metal is around wearing type back of the body contact solar cell.
Summary of the invention
The technical problem that the present invention will solve is, reduces the preparation cost of back of the body contact solar cell, simplifies the technological process of back of the body contact solar cell and improves secondary grid line and be arranged at the connection reliability between the main grid electrode of cell backside.
For solving above technical problem, according to one aspect of the present invention, provide a kind of metal around wearing type back of the body contact solar cell, it comprises:
First conductivity type regions among the cell substrate be arranged on second conductivity type regions on said first conductivity type regions;
Be formed at the secondary grid line front, that electrically connect with said second conductivity type regions of said cell substrate;
Pass the through hole of said cell substrate;
Be connected with said secondary grid line based on said through hole, composition is formed at the main grid electrode at the back side of said cell substrate;
Composition is formed at second electrode back side, that electrically connect with said first conductivity type regions of said cell substrate; And
Be used to isolate first isolation channel of said main grid electrode and said second electrode;
Wherein, Said second electrode also is used for the said second conductivity type regions autoregistration counter doping that it is contacted, and the electric current that said first conductivity type regions is produced is through being exported to said second electrode by second conductivity type regions of autoregistration counter doping.
In an embodiment of solar cell of the present invention, said first isolation channel forms, perhaps forms through the laser composition through accurate wet etching composition.
In another embodiment of solar cell of the present invention, in the said main grid electrode hollow out zone is set.
Preferably, said hollow out zone is set to square shape, circular hole or other are irregularly shaped, and it also is arranged between the said through hole.
In another embodiment of solar cell of the present invention, said second electrode is aluminium or aluminum alloy materials.
Going back in the embodiment of solar cell of the present invention, every said secondary grid line is provided with two or more said through holes with the junction of corresponding said main grid electrode.
Preferably, said main grid electrode is silver or silver alloy.
Preferably, said solar cell also comprises the antireflection layer that is formed at the front on said second conductivity type regions.Said antireflection layer can be silicon nitride.
Among one of them embodiment, said first conductivity type regions is the p semiconductor regions, and said second conductivity type regions is the n semiconductor regions.
Preferably, said solar cell also comprises the tie point that is arranged at said back of solar cell.
Preferably, said tie point and said main grid electrode are all silver or are all silver alloy, and said tie point and the synchronous silk screen printing of said main grid electrode or steel mesh printing form.
Among one of them embodiment, said solar cell also is included in the edge isolated area of border area all around said cell substrate front and/or back side formation, that be positioned at said solar cell.Said edge isolated area is provided with second isolation channel.
According to another aspect of the present invention, provide a kind of metal around the preparation method who wears type back of the body contact solar cell, it comprises step:
(1) is provided for preparing the cell substrate of first conduction type of solar cell;
(2) location forms through hole in said cell substrate;
(3) doping of second conduction type being carried out on said cell substrate surface is to form second conductivity type regions; And
(4) composition forms main grid electrode and second electrode and composition forms secondary grid line in said cell substrate front, its said second conductivity type regions autoregistration counter doping that is contacted of said second electrode pair on the said cell substrate back side.
In an embodiment of solar cell preparation method of the present invention, in step (4) afterwards, also comprise step: laser grooving forms isolation channel.Particularly, said isolation channel can comprise: first isolation channel that is used to isolate said main grid electrode and said second electrode; And second isolation channel of the edge isolated area of border area all around that is arranged on said solar cell.
In another embodiment of solar cell preparation method of the present invention, step (3) afterwards, step (4) before, also comprise step: accurate wet etching is formed for isolating first isolation channel of said main grid electrode and said second electrode.
Preferably, when said first isolation channel of accurate wet etching, simultaneously the said solar cell of accurate wet etching around the PN junction of edge isolated area of border area.
Wherein, said through hole can pass through chemical wet etching, mechanical punching, laser drilling or electronic beam drilling formation.
Preferably, also comprise cleaning step and making herbs into wool step between said step (2) and the step (3).
Preferably, said step (3) afterwards, step (4) also comprises the step of dephosphorization silex glass before.
Preferably, step (3) afterwards, step (4) before, also comprise step: deposition antireflection layer in the front of said cell substrate.
Preferably, in the said step (4), form the main grid electrode with the printing of first kind of silver slurry earlier, form secondary grid line with the printing of second kind of silver slurry then.
Preferably, in said step (4), also be included in and form some tie points on the said cell substrate back side.Wherein, said tie point and said main grid electrode are all silver or are all silver alloy, and said tie point and the synchronous silk screen printing of said main grid electrode or steel mesh printing form; Said second electrode forms with silk screen printing or steel mesh printing after said main grid electrode and tie point printing.
According to one side more of the present invention; A kind of solar module is provided; Said solar module comprises a plurality of the above any solar cell that reach, and connects through interconnector between the said solar cell, and carries out lamination and frame up back formation with prebasal plate, backboard and the layer that is sealing adhesive.
Technique effect of the present invention is; Can replenish the second conductivity type regions autoregistration as diffuse source with second electrode in this invention and mix; Thereby when forming second conductivity type regions, do not need other pattern step, second electrode autoregistration ground forms ohmic contact with first conductivity type regions.Therefore, this MWT back of the body contact solar cell technology is simple, cost is low.
Description of drawings
Fig. 1 is that the metal of prior art is carried on the back the structural representation of contact solar cell around wearing type;
Fig. 2 is the Facad structure sketch map of the metal of prior art around an embodiment who wears type back of the body contact solar cell;
Fig. 3 is the Facad structure sketch map of the metal of prior art around another embodiment that wears type back of the body contact solar cell;
Fig. 4 is the Facad structure sketch map according to the MWT back of the body contact solar cell of the embodiment of the invention;
Fig. 5 is the structure sketch map according to the MWT back of the body contact solar cell of the embodiment of the invention;
Fig. 6 is partial cross section's structural representation that the Fig. 4 and the MWT back of the body embodiment illustrated in fig. 5 contact solar cell;
Fig. 7 is the preparation method's process sketch map according to the MWT back of the body contact solar cell of first embodiment provided by the invention;
Fig. 8 to Figure 13 changes sketch map according to preparation method's structure of process shown in Figure 7;
Figure 14 is the preparation method's process sketch map according to the MWT back of the body contact solar cell of second embodiment provided by the invention;
Figure 15 to Figure 17 changes sketch map according to preparation method's structure of process shown in Figure 14.
Embodiment
What introduce below is some among a plurality of possibility of the present invention embodiment, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.In the accompanying drawings, for the sake of clarity, might amplify the thickness of layer or the area in zone, but should not be considered to the proportionate relationship that strictness has reflected physical dimension as sketch map.In the accompanying drawing, identical label refers to identical structure division, therefore will omit description of them.
" front of solar cell " among the present invention is meant the one side that receives solar light irradiation when battery operated, i.e. light receiving surface, and " back side of solar cell " among the present invention is meant and " front of solar cell " opposite one side.
Shown in Figure 4 is the Facad structure sketch map that contacts solar cell according to the MWT back of the body of the embodiment of the invention.Shown in Figure 5 is the structure sketch map that contacts solar cell according to the MWT back of the body of the embodiment of the invention.Shown in Figure 6 is partial cross section's structural representation that the Fig. 4 and the MWT back of the body embodiment illustrated in fig. 5 contact solar cell.In conjunction with Fig. 4, Fig. 5 and shown in Figure 6 solar cell of the present invention is elaborated as follows.
The MWT back of the body contact solar cell 100 of this embodiment forms based on cell substrate 110.In this embodiment, select p type monocrystalline silicon piece as cell substrate, but this is not restrictive, for example cell substrate 110 can also be the solar cell basis material of polycrystalline silicon material or other types.The concrete shape of the cell substrate 110 of solar cell is not limited by illustrated embodiment yet.As shown in Figure 6, in this embodiment, comprise the p semiconductor regions 112 of substrate itself and the n semiconductor regions 111 that substrate is mixed and forms in the cell substrate 110.P semiconductor regions 112 is tied with the pn that n semiconductor regions 111 forms solar cell, and the electric current of n semiconductor regions is drawn through the positive secondary grid line and the main grid electrode of solar cell, and the electric current of p semiconductor regions is drawn through the backplate of solar cell.
Consult Fig. 4, on the front 120 of solar cell, form some secondary grid lines 130, secondary grid line 130 is used to collect the electric current that the front 120 of solar cell is produced.Routinely, laterally arrange between the secondary grid line 130, spacing between the secondary grid line 130 and secondary grid line 130 width own are not limited by the present invention.Normally, secondary grid line 130 can be to form through silk screen printing with the silver slurry, and in this embodiment, secondary grid line 130 is formed on positive n semiconductor regions 111 surfaces.
For forming MWT back of the body contact solar cell, on secondary grid line 130, form several and penetrate the through hole 140 of cell substrate 110.On every secondary grid line 130, separated by a distance after can and main grid electrode 150 (shown in Fig. 4, Fig. 6) interconnection, thereby main grid electrode 150 can compile and draw the electric current of the battery front side that secondary grid line 130 collects effectively.In this invention, in the junction of its every secondary grid line 130, two or more through holes 140 (two through holes for example preferably are set) are set, thereby can connect main grid electrode 150 through two through holes 140 at least in the junction with corresponding main grid electrode 150.Through hole 140 can pass through methods such as chemical wet etching, mechanical punching, laser drilling, electronic beam drilling and form.For reducing cost and improving process speed, in the prior art, with the junction of corresponding main grid electrode 150 through hole (as shown in Figure 2) only is set usually at every secondary grid line 130, perhaps many shared through holes of secondary grid line (as shown in Figure 3).But along with the thickness of solar cell is more and more thinner, the improving constantly of drill process, for example adopt the laser drilling, the manufacturing cost of through hole 140 is more and more lower, and process velocity is also more and more faster; Simultaneously, because when silk screen printing formed main grid electrode 150, slurry was difficult for filling vias 140 relatively; Therefore; When number of openings more after a little while, might cause the minority through hole effectively not filled, thereby influence the connection reliability between secondary grid line 130 and the main grid electrode 150.When two or more through hole being set in the junction, can reduce greatly or avoid to connect the integrity problem that is caused because through hole is filled, improve the connection reliability of secondary grid line and main grid electrode greatly.Preferably; Embodiment as shown in Figure 4; The width that distance between 140, two through holes 140 of two through holes depends on main grid electrode 150 is set in the secondary grid line 130 and the junction of corresponding main grid electrode 150, and two adjacent through-holes 140 drop in the width range of main grid electrode 150 basically simultaneously.
Consult Fig. 5, main grid electrode 150 forms through silver slurry silk screen printing or steel mesh printing, is formed to many main grid electrode 150 parallel arranged the back side of solar cell.Also forming second electrode on the back side of solar cell is backplate 160.Like Fig. 5 and shown in Figure 6, between main grid electrode 150 and the backplate 160 both positive and negative polarity isolated area 170 is set, in this embodiment, both positive and negative polarity isolated area 170 is around main grid electrode 150.Each both positive and negative polarity isolated area 170 is provided with isolation channel 171 (or 172) (following will the specific descriptions).In the edge of solar cell, also in the cell substrate front or the back side be provided with both positive and negative polarity isolation channel or isolated area.Such as the edge isolated area 175 that forms at cell backside around all main grid electrodes 150 and all backplates 160.Isolation channel 171 (or 172) on the both positive and negative polarity isolated area 170 and the isolation channel 176 on the edge isolated area 175 have two kinds of implementation methods; A kind of is to adopt accurate wet method partition method; Promptly adopt on the cell substrate 110 of the method for some glue or silk screen printing, the edge isolated area 175 that will be coated in desire formation isolation channel and both positive and negative polarity isolated area 170 with the chemical sizwe of Semiconductor substrate 110 reactions; Remove the pn knot of institute's coating zone effectively through chemical sizwe and Semiconductor substrate 110 etching reactions, thereby form the isolation channel of edge area of isolation 175 and both positive and negative polarity isolated area 170 correspondences; Another kind is directly to adopt the laser grooving method, on both positive and negative polarity isolated area 170 and edge isolated area 175, forms isolation channel.
Continue like Fig. 5 and shown in Figure 6, in through hole 140, main grid electrode 150 can form ohmic contact with n semiconductor regions 111, and main grid electrode 150 can also form ohmic contact with the n semiconductor regions 111 at the back side certainly.Preferably; Some hollow outs zone 151 is set on main grid electrode 150; Thereby can reduce the contact area of main grid electrode metal and silicon (also being n semiconductor regions 111) greatly, reduce the recombination rate of metal and silicon effectively, and then improve the conversion efficiency of solar cell.Simultaneously, vacancy section is set also can significantly reduces main grid electrode metal consumption (for example silver paste), thus the cost of reduction solar cell.Hollow out zone 151 is set to the box-shaped structure in this embodiment, but its concrete shape is not receive embodiment of the invention restriction, for example can also be irregularly shaped etc. for circular hole or other.Position and the shape size of hollow out zone 151 on the main grid electrode is principle with the electric connection that does not influence metal in main grid electrode and the through hole.
Continue as shown in Figure 6ly, backplate 160 itself is to be formed directly on the n semiconductor regions, thereby contacts with local n semiconductor regions 111.Through selecting the type of electrode, make them can be to n semiconductor regions 111 counter dopings that it contacted, the metallic element of for example selecting III A bunch is as the backplate material, and preferably, backplate 160 is aluminium or aluminium alloy.Therefore, aluminium can carry out p type doping (particularly in the metallization processes that forms the aluminium electrode) to the n semiconductor regions 111 that it contacted.Thereby can on the cell substrate of 160 adjacency of each backplate, form counterdopant region 180.In this embodiment; Counterdopant region 180 is the p semiconductor regions; Its p type doping content can be selected the doping content greater than p semiconductor regions 112, thereby is easy to form ohmic contact with backplate 160, reduces the contact resistance between electrode 160 and the cell substrate.Need to prove; Counterdopant region 180 and p semiconductor regions 112 normally do not have obvious boundary as shown in Figure 6; This is because when in cell substrate, mixing as the source of mixing with backplate; According to the characteristics of diffusing, doping, doped chemical aluminium can diffuse in the p semiconductor regions 112 always.
Therefore; The electric current that p semiconductor regions 111 is produced can export backplate 160 to through counterdopant region 180; Can be formed self-aligned ohmic contact between backplate 160 and the p semiconductor regions 112; When preparation forms the n semiconductor regions, do not need other photoetching composition technology, preparation cost is minimized.
Continue as shown in Figure 6ly, for realizing the isolation of main grid electrode 150 and backplate 160 overleaf, isolation channel 171 is set on both positive and negative polarity isolated area 170, isolation channel 171 is around around the main grid electrode 150, thereby physically realized isolating well.In this embodiment; Isolation channel 171 forms through high-rate laser cutting technology; The degree of depth of isolation channel is greater than the thickness of n semiconductor regions 111 and less than the thickness of Semiconductor substrate 110; For example, when the thickness range of n semiconductor regions 111 was 0.2 micron, the degree of depth of isolation channel was at least greater than 0.2 micron.The concrete width of isolation channel 171 is not restrictive.Simultaneously, in the embodiment shown in fig. 6, at the positive isolation channel 176 that is provided with around all secondary grid lines 130 of cell substrate, preferably, can also be provided with at the cell substrate back side around all main grid electrodes and 150 with the isolation channel 176 of backplate 160.The isolation channel 176 at the front and/or the back side all be arranged on solar cell around in the edge isolated area 175 of border area.Edge isolation channel 176 also is to form through high-rate laser cutting technology, and isolation channel 176 passes antireflection layer 113, n semiconductor regions 111 to p semiconductor regions 112.
Continue as shown in Figure 6ly, in another specific embodiment, solar cell 100 also comprises and is deposited on cell substrate antireflection layer 113 positive, on the n semiconductor regions.Antireflection layer 113 can be materials such as silicon nitride, and its concrete thickness range can be the 70-90 nanometer.Through antireflection layer 113 is set, can effectively improve the conversion efficiency of solar cell.
Consult shown in Figure 5; In this embodiment; Solar cell 100 also comprises the tie point 161 that is arranged on the cell backside; It mainly is used in preparation the medium that is connected between battery and the battery being provided during assembly, is used for improving the connection performance of battery and interconnector, helps improving the connection reliability that solar cell is interconnected to form solar module.The characteristic decision of the bonding strength that the quantity of tie point 161 can be as requested and the interconnector of use, it is not restrictive.Preferably; Tie point 161 is selected and main grid electrode 150 identical materials; For example silver-colored, thus in silk screen printing or steel mesh printing process formation main grid electrode 150, composition forms synchronously; Help further simplifying the step of preparation process of battery, thereby reduce the cost of manufacture of solar cell.
Below will specify the preparation method process of Fig. 4 to MWT back of the body contact solar cell embodiment illustrated in fig. 5.
Shown in Figure 7 is the preparation method's process sketch map that contacts solar cell according to the MWT back of the body of first embodiment provided by the invention.Fig. 8 is extremely shown in Figure 13 to be to change sketch map according to preparation method's structure of process shown in Figure 7.Below in conjunction with Fig. 7, Fig. 8 to Figure 13 preparation method's process of this embodiment is described, also the concrete structure of this MWT back of the body contact solar cell is done schematically explanation simultaneously.
At first, step S10 is provided for preparing the cell substrate of first conduction type of solar cell.As shown in Figure 8, in this embodiment, solar cell is based on cell substrate 110 preparations and forms, and selects p type monocrystalline silicon as cell substrate 110 (also promptly first conduction type is the p type).Particularly, the electrical resistivity range of p type monocrystalline silicon can be 0.1ohmcm-10ohmcm, but is not limited thereto scope.The front 120 of cell substrate 110 is by solar light irradiation, the back side 190 of cell substrate 110 when battery operated not by solar light irradiation.
Further, step S30, the location forms through hole in cell substrate.As shown in Figure 9, on cell substrate 110, form several through holes 140, through hole 140 penetrates into the back side of cell substrate from the front of cell substrate.Methods such as through hole 140 can chemical wet etching, mechanical punching, laser drilling, electronic beam drilling form, and normally, select laser drilling to form.The concrete shape of through hole 140 is relevant with selected manufacturing process, for example, when selecting laser drilling, forms columniform through hole as shown in Figure 9.Through hole 140 is mainly used in from the back side and draws the main grid electrode, and its concrete shape and size are not restrictive.For example, through hole can select to be roughly cylindrical hole, and its diameter range is about 10 microns to 1000 microns.Through hole 140 is to be formed to desire composition and form on the position of secondary grid line, through the position of positioning through hole 140, and can locating pair grid line 130 and the position of the junction of corresponding main grid electrode 150.
Further, step S50 carries out the doping of second conduction type to the cell substrate surface.Shown in figure 10, in this embodiment, the n type is carried out on the surface of cell substrate 110 mix, thereby form n semiconductor regions 111 on cell substrate 110 surfaces.Particularly, can select methods such as diffusing, doping, ion implantation doping.In this invention, need not carry out pattern step such as photoetching in addition to this step of mixing, therefore, in this step of this embodiment, n semiconductor regions 111 is to surround original p semiconductor regions 112.
Need to prove, be to remove the phosphorosilicate glass layer that forms on the cell substrate surface in the doping process, carry out the step of dephosphorization silex glass usually in the doping of second conduction type later on, wherein, the method that the dephosphorization silex glass can chemical cleaning is removed.
Further need to prove; In another specific embodiment; Normally; After step S30, before the step S50, also comprise cleaning step and making herbs into wool step, can remove owing to make through hole the damage on cell substrate surface, particularly the fire damage surperficial during laser drilling cell substrate through cleaning step and making herbs into wool; Also can remove the cutting damage that the silicon chip cutting causes; And form the matte (not shown) on the cell substrate surface, help improving the conversion efficiency of battery; Through hole is also by formed matte roughening simultaneously, and this helps improving the reliability that slurry is filled.
Further, step S70, deposition antireflection layer in the front of cell substrate.Shown in figure 11, the antireflection layer 113 of positive deposition on the n semiconductor regions, it can pass through methods such as PECVD, PVD and form, and antireflection layer 113 can be chosen as materials such as silicon nitride, and its concrete thickness range can be the 70-90 nanometer.Through antireflection layer 113 is set, can effectively improve the conversion efficiency of solar cell.
Further, step S90, at the back-patterned formation main grid electrode 150 and the tie point 161 of cell substrate, composition forms backplate 160 again; And in the front of cell substrate composition forms secondary grid line.Shown in figure 12, can select to comprise secondary grid line 130 and main grid electrode 150 and backplate 160 with the formation of technology compositions such as conventional silk screen printing or steel mesh printing.Wherein, because secondary grid line 130, main grid electrode 150 are different with the material of backplate 160, it also is the pattern step formation through different silk screen printings or steel mesh printing usually.Preferably, can at first form main grid electrode 150 and tie point 161 with first kind of silver slurry printing simultaneously, this moment, first kind of silver-colored slurry can be filled through hole 140; Can form secondary grid line 130 with second kind of silver slurry printing then, secondary grid line 130 is electrically connected with electrocondution slurry formation in the through hole 140, contacts thereby make main grid electrode 150 form good electricity with secondary grid line.Backplate 160 can be through the aluminium paste silk screen printing in cell substrate 110 back sides, and process sequence can be between forming main grid electrode 150 and secondary grid line 130 between the two.Preferably, can select first silk screen printing to form main grid electrode 150 and tie point 161, because select same slurry for use, main grid electrode 150 can form with tie point 160 simultaneously, helps simplifying technology like this, thereby reduces manufacturing cost.
In addition; Preferably; When silk screen printing forms the main grid electrode, can also form some hollow outs zone 151 (as shown in Figure 5) when half tone is patterned at printing formation main grid electrode 150 through being provided with, thereby can reduce the contact area of main grid electrode metal and silicon (also being n semiconductor regions 111) greatly; Reduce the compound of metal and silicon effectively, and then improve the conversion efficiency of solar energy.Simultaneously, vacancy section is set also can significantly reduces main grid electrode metal consumption (for example silver paste), thus the cost of reduction solar cell.Hollow out zone 151 is set to the box-shaped structure in this embodiment, but its concrete shape is not receive embodiment of the invention restriction, for example can also be circular hole or other shapes etc.Position and the shape size of hollow out zone 151 on the main grid electrode be not to influence the principle that is connected to of metal in main grid electrode and the through hole.
Need to prove, form in secondary grid line 130, main grid electrode 150, the backplate 160 employed slurries, can also comprise the alloying element that is mixed in printing.For example, other metallic element that mixes in the silver slurry forms alloy silver electrode, and other metallic element that mixes in the aluminium paste forms aluminum alloy anode.
Further, step S95, laser grooving forms isolation channel.Shown in figure 13; Isolated area 170 compositions between electrode and the main grid electrode form isolation channel 171 overleaf, and around the front of battery and/or the back side (be front and back in this embodiment) composition formation isolation channel 176 in the edge area of isolation 175 of border area.Adopt laser grooving technology at a high speed to form isolation channel 171; Isolation channel 171 is around around the main grid electrode 150; The degree of depth of isolation channel 171 is greater than the thickness of n semiconductor regions 111 and less than the thickness of Semiconductor substrate 110, thereby physically realized isolating well.In this embodiment, the isolation channel 176 of edge isolated area 175 also is to realize through high-rate laser cutting technology.
So far, MWT back of the body contact solar cell embodiment illustrated in fig. 6 basically forms.
Shown in Figure 14 is the preparation method's process sketch map that contacts solar cell according to the MWT back of the body of second embodiment provided by the invention.Than preparation method's process embodiment illustrated in fig. 7, its main difference is to be formed for the method divergence of the isolation channel of isolation channel that both positive and negative polarity isolates and edge area of isolation, and therefore, step S10 to S50 is identical, repeats no more at this.Figure 15 is extremely shown in Figure 17 to be to change sketch map according to preparation method's structure of process shown in Figure 14.Further specify preparation method's process of this embodiment below in conjunction with Figure 14, Figure 15 to Figure 17.
Step S60, accurate wet etching are formed for isolating the isolation channel of main grid electrode and backplate and are used for the isolation channel that the edge isolates.Shown in figure 15; Form isolation channel 172 through accurate wet-etching technology location; Promptly adopt on the cell substrate 110 of the method for some glue or silk screen printing, the edge isolated area 175 that will be coated in desire formation isolation channel and both positive and negative polarity isolated area 170, remove the pn knot of institute's coating zone through chemical sizwe and Semiconductor substrate 110 etching reactions effectively with the chemical sizwe of Semiconductor substrate 110 reactions.In this embodiment; Chemical sizwe be coated on cell substrate 110 around; Thereby simultaneously also can etching reaction remove the part n semiconductor regions 111 of surrounded surface, the pn knot is corroded like this, can realize the edge isolation between p semiconductor regions and the n semiconductor regions effectively.In this embodiment, 172 of isolation channels around the zone composition is formed main grid electrode 150, the degree of depth of isolation channel is greater than the thickness of n semiconductor regions 111, thereby physically realized isolating well.
Further, step S70, deposition antireflection layer in the front of cell substrate.Shown in figure 16, the antireflection layer 113 of positive deposition on the n semiconductor regions, it can pass through methods such as PECVD, PVD and form, and antireflection layer 113 can be chosen as materials such as silicon nitride, and its concrete thickness range can be the 70-90 nanometer.Through antireflection layer 113 is set, can effectively improve the conversion efficiency of solar cell.
Further, step S90 forms main grid electrode 150, tie point 161 and backplate 160 in the cell substrate back-patterned; Composition forms secondary grid line in the cell substrate front.This step and preparation method's embodiment illustrated in fig. 7 step S90 is basic identical, gives unnecessary details no longer one by one at this.Form solar cell shown in figure 17 through this step.Than solar battery structure shown in Figure 13, its main distinction is that isolation channel 172 is to form through accurate wet etching.
So far, basically formed solar cell embodiment illustrated in fig. 17.
Contact solar cell with a plurality of Fig. 4 with the MWT back of the body shown in Figure 5; Can assemble the formation solar module; In conjunction with shown in Figure 5; A plurality of MWT back of the body contact solar cells are connected to form the battery pack string through interconnector, add prebasal plate (being generally glass), backboard then and the layer that is sealing adhesive can form the solar module with certain power output through the lamination and the step that frames up.
Need to prove, more than among all embodiment, all being based on cell substrate is that p type conduction type describes.But those skilled in the art know knowledge, and cell substrate also can be chosen as n type conduction type, and same similar solar battery structure also can prepare formation.When cell substrate is n type conduction type; Cell substrate comprises n semiconductor regions and the p semiconductor regions of surrounding this n semiconductor regions; Wherein secondary grid line directly is connected with the p semiconductor regions; The main grid electrode is arranged at cell backside, and another electrode at the back side correspondingly is the backplate that electrically connects with the n semiconductor regions.
Above example has mainly been explained the contact of the MWT back of the body solar cell, various preparation method and solar module thereof of the present invention.Although only some of them execution mode of the present invention is described, those of ordinary skills should understand, and the present invention can be in not departing from its purport and scope implements with many other forms.Therefore, example of being showed and execution mode are regarded as schematic and nonrestrictive, are not breaking away under the situation of liking defined spirit of the present invention of each claim and scope enclosed, and the present invention possibly contained various modifications and replacement.
Claims (27)
1. a metal is around wearing type back of the body contact solar cell, and it comprises:
First conductivity type regions among the cell substrate be arranged on second conductivity type regions on said first conductivity type regions;
Be formed at the secondary grid line front, that electrically connect with said second conductivity type regions of said cell substrate;
Pass the through hole of said cell substrate;
Be connected with said secondary grid line based on said through hole, composition is formed at the main grid electrode at the back side of said cell substrate;
Composition is formed at second electrode back side, that electrically connect with said first conductivity type regions of said cell substrate; And
Be used to isolate first isolation channel of said main grid electrode and said second electrode;
Wherein, Said second electrode also is used for the said second conductivity type regions autoregistration counter doping that it is contacted, and the electric current that said first conductivity type regions is produced is through being exported to said second electrode by second conductivity type regions of autoregistration counter doping.
2. solar cell as claimed in claim 1 is characterized in that, said first isolation channel forms, perhaps forms through the laser composition through accurate wet etching composition.
3. solar cell as claimed in claim 1 is characterized in that, in the said main grid electrode hollow out zone is set.
4. solar cell as claimed in claim 3 is characterized in that, said hollow out zone is set to square shape, circular hole or other are irregularly shaped, and it also is arranged between the said through hole.
5. solar cell as claimed in claim 1 is characterized in that, said second electrode is aluminium or aluminum alloy materials.
6. solar cell as claimed in claim 1 is characterized in that, every said secondary grid line is provided with two or more said through holes with the junction of corresponding said main grid electrode.
7. like claim 1 or 2 or 3 or 5 described solar cells, it is characterized in that said main grid electrode is silver or silver alloy.
8. like claim 1 or 2 or 3 or 5 arbitrary described solar cells, it is characterized in that, also comprise the antireflection layer that is formed at the front on said second conductivity type regions.
9. solar cell as claimed in claim 8 is characterized in that, said antireflection layer is a silicon nitride.
10. like claim 1 or 2 or 3 or 5 arbitrary described solar cells, it is characterized in that said first conductivity type regions is the p semiconductor regions, said second conductivity type regions is the n semiconductor regions.
11. solar cell as claimed in claim 5 is characterized in that, said solar cell also comprises the tie point that is arranged at said cell backside.
12. solar cell as claimed in claim 11 is characterized in that, said tie point and said main grid electrode are all silver or are all silver alloy, and said tie point and the synchronous silk screen printing of said main grid electrode or steel mesh printing form.
13., it is characterized in that said solar cell also is included in the edge isolated area of border area all around said cell substrate front and/or back side formation, that be positioned at said solar cell like claim 1 or 2 or 3 or 5 arbitrary described solar cells.
14., it is characterized in that said edge isolated area is provided with second isolation channel like the arbitrary described solar cell of claim 13.
15. a metal is characterized in that around the preparation method who wears type back of the body contact solar cell it comprises step:
(1) is provided for preparing the cell substrate of first conduction type of solar cell;
(2) in said cell substrate, form the location and form through hole;
(3) doping of second conduction type being carried out on said cell substrate surface is to form second conductivity type regions; And
(4) composition forms main grid electrode and second electrode and composition forms secondary grid line in said cell substrate front, its said second conductivity type regions autoregistration counter doping that is contacted of said second electrode pair on the said cell substrate back side.
16. method as claimed in claim 15 is characterized in that, in step (4) afterwards, also comprises step: laser grooving forms isolation channel.
17. method as claimed in claim 16 is characterized in that, said isolation channel comprises: first isolation channel that is used to isolate said main grid electrode and said second electrode; And second isolation channel of the edge isolated area of border area all around that is arranged on said solar cell.
18. method as claimed in claim 15 is characterized in that, step (3) afterwards, step (4) before, also comprise step: accurate wet etching is formed for isolating first isolation channel of said main grid electrode and said second electrode.
19. method as claimed in claim 18 is characterized in that, when said first isolation channel of accurate wet etching, simultaneously the said solar cell of accurate wet etching around the PN junction of edge isolated area of border area.
20., it is characterized in that said through hole forms through chemical wet etching, mechanical punching, laser drilling or electronic beam drilling like claim 15 or 16 or 18 described methods.
21. like claim 15 or 16 or 18 described methods, it is characterized in that, also comprise cleaning step and making herbs into wool step between said step (2) and the step (3).
22. like claim 15 or 16 or 18 described methods, it is characterized in that, step (3) afterwards, step (4) before, also comprise step: deposition antireflection layer in the front of said cell substrate.
23., it is characterized in that said step (3) afterwards, step (4) also comprises the step of dephosphorization silex glass before like claim 15 or 16 or 18 described methods.
24., it is characterized in that like claim 15 or 16 or 18 described methods, in the said step (4), form said main grid electrode with the printing of first kind of silver slurry earlier, form said secondary grid line with the printing of second kind of silver slurry then.
25. like claim 15 or 16 or 18 described methods, it is characterized in that, in said step (4), also be included in and form some tie points on the said cell substrate back side.
26. method as claimed in claim 25 is characterized in that, said tie point and said main grid electrode are all silver or are all silver alloy, and said tie point and the synchronous silk screen printing of said main grid electrode or steel mesh printing form; Said second electrode forms with silk screen printing or steel mesh printing after said main grid electrode and tie point printing.
27. solar module; It is characterized in that; Said solar module comprises a plurality of like each described solar cell in the claim 1 to 14, connects through interconnector between the said solar cell, and carries out lamination and frame up back formation with prebasal plate, backboard and the layer that is sealing adhesive.
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