CN102709336A - Back electrode structure of back contact solar cell - Google Patents
Back electrode structure of back contact solar cell Download PDFInfo
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- CN102709336A CN102709336A CN201210128387XA CN201210128387A CN102709336A CN 102709336 A CN102709336 A CN 102709336A CN 201210128387X A CN201210128387X A CN 201210128387XA CN 201210128387 A CN201210128387 A CN 201210128387A CN 102709336 A CN102709336 A CN 102709336A
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- solar cell
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- back side
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- 239000002002 slurry Substances 0.000 claims abstract description 9
- 239000011148 porous material Substances 0.000 claims description 13
- 238000003466 welding Methods 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 9
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a back electrode structure of a back contact solar cell. The back of the cell is provided with through holes and a back electrode; electro-conduction slurry is arranged in the through holes to form hole electrodes so that a positive electrode is drawn to the back; the back of the cell is provided with connection electrodes with the same quantity as that of the through holes; the connection electrodes and the through holes are correspondingly arranged one to one; and each connection electrode is positioned at the same side of each through hole; one end of each connection electrode is electrically connected with the hole electrode; and the other end of each connection electrode forms a welding zone. The invention develops a new back electrode structure of the back contact solar cell; and each connection electrode is arranged at the periphery of each through hole of the cell back, one end of each connection electrode forms the welding zone, so in the process of welding components, a welding point does not cover the plated-through hole, but is directly connected with the welding zone, further, the condition that the plated-through hole is damaged by the thermal stress produced by the welding during the process of packaging the components, so that the power loss is caused can be avoided, and the obvious effect can be achieved.
Description
Technical field
The present invention relates to a kind of backplate structure of back contact solar cell sheet, belong to the solar cell field.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in existing sustainable energy, solar energy is undoubtedly a kind of cleaning, general and the most potential alternative energy source.At present; In all solar cells; Crystal silicon solar energy battery is one of solar cell that obtains business promotion on a large scale; This is that silicon solar cell is compared the solar cell of other types simultaneously because silicon materials have very abundant reserves in the earth's crust, and excellent electric property and mechanical performance are arranged.Therefore, crystal-silicon solar cell in the photovoltaic field in occupation of consequence.High efficiency is the development trend of present crystal-silicon solar cell; Through improving the passivation on surface-texturing, selective emitter junction, front surface and back of the body surface; Laser buries the transformation efficiency that technology such as grid improve solar cell; But because it needs special devices and complicated technological process, industrialization process is restricted.
At present, back contact solar cell (MWT solar cell) has received everybody extensive concern, and its advantage is: because its front does not have the main grid line; Positive pole and negative pole have reduced the shading of battery sheet all at the back side of battery sheet, have improved the conversion efficiency of battery sheet; Simultaneously since anodal and negative pole all at the back side of battery sheet; When making solar components, can reduce the shading influence of welding, simultaneously to the battery sheet; Adopt new packaged type can reduce the series resistance of battery sheet, reduce the power loss of battery sheet.
The MWT solar cell is compared the component power with lower optical loss and Geng Gao with traditional silicon solar cell.Traditional silicon solar cell optical loss is generally about 7%; MWT silicon solar cell optical loss about 5%; On technology, to realize this battery structure; The most common way is on the battery sheet, to bore a series of aperture through laser technology, in follow-up operation, to the path of aperture metallization as current delivery.Front electrode is radial MWT structure, and the number of perforations that needs is less relatively, for the 156*156 silicon chip, generally is 16 through holes.For the MWT structure of 3 busbar shapes, the number of perforations that needs is more relatively, for the silicon chip of 156*156, needs 100 usually more than the through hole.
At present, the mutual contact mode between the back contact solar cell sheet mainly contains two kinds: the one, and the conducting film that required precision is higher, the 2nd, lower-cost traditional welding.Wherein, conducting film requires very high to service precision, and cost is higher, becomes in the product also not by extensive employing in a large amount of industry.Therefore, traditional welding connection remains main connected mode.
Yet the back contact solar cell sheet is in follow-up welding process, because the thermal stress that welding produces tends to cause some metallized through holes fractures, making the inefficacy of lowering one's standard or status of corresponding battery unit has increased power loss greatly.
Summary of the invention
The object of the invention provides a kind of backplate structure of back contact solar cell sheet.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of backplate structure of back contact solar cell sheet, and the back side of battery sheet is provided with through hole, backplate, is provided with electrocondution slurry in the through hole, forms pore electrod, and front electrode is guided to the back side; The back side of said battery sheet is provided with the connection electrode with the through hole equal number, and connection electrode and through hole are corresponding one by one to be provided with, and each connection electrode all is positioned at the same side of each through hole, and an end of connection electrode is electrically connected with pore electrod, other end formation weld zone.
In the preceding text; Said through hole can adopt the mode of laser drill; The position of laser drill is being in 2.0mm perpendicular to the radius on the direction of connection electrode, and the maximum cross-section area is got being parallel on the direction of connection electrode in the position of laser drill, makes that current delivery loss in the vertical is minimum.
Preferably, the number of said through hole is 9 ~ 25, is point-like and arranges, and all is distributed in the back side of battery.
In the technique scheme, said through hole is 0.5 ~ 3mm to the distance of the weld zone of connected connection electrode.
Corresponding with it another kind of technical scheme, a kind of backplate structure of back contact solar cell sheet, the back side of battery sheet is provided with plurality of through holes, backplate, is provided with electrocondution slurry in the through hole, forms pore electrod, and front electrode is guided to the back side; Said through hole is set up in parallel; Close two row through holes constitute one group of through hole array; The back side of said battery sheet is provided with the said through hole array of at least 2 groups, and the back side of said battery sheet is provided with the connection electrode band of strip, and the quantity of connection electrode band is identical with the quantity of said through hole array; Said connection electrode band is located between the through hole array, its two ends all with two row through holes in pore electrod be electrically connected, form the weld zone between wherein.
Back contact solar cell sheet in the technique scheme is another kind of back of the body contact structures commonly used; 80 ~ 200 through holes are set as the one of which; Comprise the through hole array that at least 2 groups are set up in parallel, each via-hole array generally comprises the close through hole of 2 row, and the distance between the two row through holes is generally 2.5 ~ 10mm; Every row are provided with 20 ~ 40 through holes; This structure is in order to guarantee current delivery, and it has two advantages: (1) has increased the collection of photo-generated carrier, has reduced the transmission loss of photoelectric current; (2) reduced because the power loss that the part hole does not have complete metalization to induce
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. the present invention has developed a kind of backplate structure of new back contact solar cell sheet; It is provided with connection electrode on the through hole limit of cell back face, an end of connection electrode forms the weld zone, thereby in the assembly welding sequence; The weldering node does not cover plated-through hole; But directly be connected with the weld zone, thereby avoided thermal stress that assembly produces because of welding in encapsulation process to the power loss that the infringement of plated-through hole causes, obtained significant effect.
2. the present invention is under the prerequisite that does not reduce battery efficiency, avoided the infringement to through hole of thermal stress that the battery sheet produces because of welding, thereby the lower one's standard or status situation of inefficacy, power loss of battery unit can not occur.
3. of the present invention simple in structure, be easy to realize, be suitable for applying.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention one;
Fig. 2 is the structural representation of through hole and connection electrode in the embodiment of the invention one;
Fig. 3 is the welding sketch map of battery sheet and welding in the embodiment of the invention one;
Fig. 4 is the structural representation of the embodiment of the invention two;
Fig. 5 is the A portion enlarged drawing of Fig. 4.
Wherein, 1, backplate; 2, pore electrod; 3, connection electrode; 4, weld zone; 5, through hole; 6, connection electrode band; 7, welding.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
Shown in Fig. 1 ~ 3, a kind of backplate structure of back contact solar cell sheet, the back side of battery sheet is provided with through hole, backplate 1, is provided with electrocondution slurry in the through hole, forms pore electrod 2, and front electrode is guided to the back side; The back side of said battery sheet is provided with the connection electrode 3 with the through hole equal number, and connection electrode and through hole are corresponding one by one to be provided with, and each connection electrode all is positioned at the same side of each through hole, and an end of connection electrode is electrically connected with pore electrod, other end formation weld zone 4.
The silicon chip front is provided with 16 laser drill, is metallized in the boring, and as the electric current collection path, corresponding position, the silicon chip back side is provided with the connection electrode 3 of 16 distributed point-like, and the weld zone of connection electrode and the center line of laser drill depart from 1.0mm.Electrode is realized through the mode of silk screen printing silver slurry.The welding sketch map of battery sheet and welding 7 is referring to shown in Figure 3, and welding 7 is located on the weld zone.
Embodiment two
Shown in Fig. 4 ~ 5, a kind of backplate structure of back contact solar cell sheet, the back side of battery sheet is provided with plurality of through holes 5, backplate 1, is provided with electrocondution slurry in the through hole, forms pore electrod, and front electrode is guided to the back side; Said through hole is set up in parallel, and the distance between the close two row through holes is 4mm, constitutes one group of through hole array; The back side of said battery sheet is provided with 3 groups of said through hole arrays, and the back side of said battery sheet is provided with the connection electrode band 6 of strip, and the quantity of connection electrode band is identical with the quantity of said through hole array; Said connection electrode band is located between the through hole array, its two ends all with two row through holes in pore electrod is electrically connected, wherein between formation weld zone 4.
The silicon chip front is provided with 150 laser drill, is metallized in the boring, and as the electric current collection path, corresponding position, the silicon chip back side is provided with the connection electrode band 6 of wire, and the weld zone of connection electrode band and the center line of laser drill depart from 0.5mm.Electrode is realized through the mode of silk screen printing silver slurry.
The width of the weld zone of said connection electrode band is 3mm, and the center line of weld zone and laser drill departs from 0.5mm, thereby the distance between the close two row through holes is 4mm.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, and under the situation that does not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore; No matter from which point; All should regard embodiment as exemplary; And be nonrestrictive, scope of the present invention is limited accompanying claims rather than above-mentioned explanation, therefore is intended to the implication of the equivalents that drops on claim and all changes in the scope are included in the present invention.Should any Reference numeral in the claim be regarded as limit related claim.
In addition; Describing according to execution mode though should be appreciated that this specification, is not that each execution mode only comprises an independently technical scheme; This narrating mode of specification only is for clarity sake; Those skilled in the art should make specification as a whole, and the technical scheme among each embodiment also can form other execution modes that it will be appreciated by those skilled in the art that through appropriate combination.
Claims (3)
1. the backplate structure of a back contact solar cell sheet, the back side of battery sheet is provided with through hole, backplate (1), is provided with electrocondution slurry in the through hole, forms pore electrod (2), and front electrode is guided to the back side; It is characterized in that: the back side of said battery sheet is provided with the connection electrode (3) with the through hole equal number; Connection electrode and through hole are corresponding one by one to be provided with; And each connection electrode all is positioned at the same side of each through hole, and an end of connection electrode is electrically connected with pore electrod, and the other end forms weld zone (4).
2. the backplate structure of back contact solar cell sheet according to claim 1 is characterized in that: said through hole is 0.5 ~ 3mm to the distance of the weld zone of connected connection electrode.
3. the backplate structure of a back contact solar cell sheet, the back side of battery sheet is provided with plurality of through holes (5), backplate (1), is provided with electrocondution slurry in the through hole, forms pore electrod, and front electrode is guided to the back side; Said through hole is set up in parallel; Close two row through holes constitute one group of through hole array; The back side of said battery sheet is provided with the said through hole array of at least 2 groups, it is characterized in that: the back side of said battery sheet is provided with the connection electrode band (6) of strip, and the quantity of connection electrode band is identical with the quantity of said through hole array; Said connection electrode band is located between the through hole array, its two ends all with two row through holes in pore electrod be electrically connected, form weld zone (4) between wherein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210128387XA CN102709336A (en) | 2012-04-27 | 2012-04-27 | Back electrode structure of back contact solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210128387XA CN102709336A (en) | 2012-04-27 | 2012-04-27 | Back electrode structure of back contact solar cell |
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| Publication Number | Publication Date |
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| CN102709336A true CN102709336A (en) | 2012-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210128387XA Pending CN102709336A (en) | 2012-04-27 | 2012-04-27 | Back electrode structure of back contact solar cell |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133521A (en) * | 1997-03-13 | 2000-10-17 | Sanyo Electric Co., Ltd. | Solar battery output section and its method of manufacture |
| US20110057283A1 (en) * | 2007-08-31 | 2011-03-10 | Akiko Tsunemi | Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module |
| CN102171838A (en) * | 2009-03-02 | 2011-08-31 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN102292825A (en) * | 2009-06-22 | 2011-12-21 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN102386254A (en) * | 2010-09-06 | 2012-03-21 | 无锡尚德太阳能电力有限公司 | Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof |
-
2012
- 2012-04-27 CN CN201210128387XA patent/CN102709336A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133521A (en) * | 1997-03-13 | 2000-10-17 | Sanyo Electric Co., Ltd. | Solar battery output section and its method of manufacture |
| US20110057283A1 (en) * | 2007-08-31 | 2011-03-10 | Akiko Tsunemi | Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module |
| CN102171838A (en) * | 2009-03-02 | 2011-08-31 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN102292825A (en) * | 2009-06-22 | 2011-12-21 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN102386254A (en) * | 2010-09-06 | 2012-03-21 | 无锡尚德太阳能电力有限公司 | Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof |
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Application publication date: 20121003 |