CN101707230B - 一种大功率白光led制造方法 - Google Patents

一种大功率白光led制造方法 Download PDF

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CN101707230B
CN101707230B CN2009101451765A CN200910145176A CN101707230B CN 101707230 B CN101707230 B CN 101707230B CN 2009101451765 A CN2009101451765 A CN 2009101451765A CN 200910145176 A CN200910145176 A CN 200910145176A CN 101707230 B CN101707230 B CN 101707230B
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silica gel
ceramic substrate
white light
light led
power white
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CN101707230A (zh
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胡建红
董昀
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Jiangsu Wenrun Optoelectronic Co Ltd
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Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
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Abstract

本发明公开了一种大功率白光LED制造方法,a、在陶瓷基板(1)上电镀银或铝覆盖固晶区域并印刷电路;b、对陶瓷基板(1)的孔道注银连接散热热沉(2);c、用银胶固定晶片(3),用金线(4)焊接连接电路;d、陶瓷基板(1)上放置一多孔金属模板(5);e、将硅胶荧光粉注入金属模板(5)的每个孔道(51),覆盖晶片(3)及金线(4);f、烘烤硅胶;g、取出金属模板(5)形成多个荧光硅胶层(6);h、将另一金属模板盖在荧光硅胶层(6)上,硅胶注入金属模板的半球形凹腔内;i、烘烤硅胶成硅胶透镜(7),脱模后切割。本发明克服了现有大功率白光LED一致性差、有黄圈的问题,荧光粉的涂敷实现均匀化,不需要特殊定制型的晶片。

Description

一种大功率白光LED制造方法
技术领域
本发明涉及一种LED制造方法,尤其涉及一种大功率白光LED制造方法,属于照明技术领域。
背景技术
当前大功率白光LED普遍采用PPA塑料,嵌入高导热铜合金散热热沉,在蓝光晶片上涂敷荧光粉的方式生产,当荧光粉受蓝光激发后发出黄色光,蓝光和黄光混合形成白光。荧光粉的涂敷方式分为点胶式和在晶片表面印刷式,采用点胶方式时存在着制造的一致性差,易产生黄圈问题;采用印刷方式工艺复杂,而且必须采用特殊定制的发光晶片才能实现,生产成本高,一般生产厂家无法实现。因此解决荧光粉的涂敷均匀化的技术问题,有助于克服现有大功率白光LED生产方式所带来的一致性差、有黄圈问题。同时如能做到不需要特殊定制晶片,则有利于简化工艺流程实现大规模生产。
发明内容
本发明的目的在于提供一种大功率白光LED制造方法,实现荧光粉涂敷的均匀化,而且不需要特殊定制型的晶片,克服现有大功率白光LED生产方式所带来的一致性差、有黄圈的问题。
本发明的目的通过以下技术方案予以实现:
一种大功率白光LED制造方法,包含下列步骤:
a、在陶瓷基板1上电镀银或铝覆盖固晶区域并印刷出电路;
b、对陶瓷基板1的孔道注银连接其底部的散热热沉2;
c、采用导热率达15w/m.k以上的高导热银胶将长、宽在30mil(1mil=1/1000英寸=0.0254mm)以上的晶片3固定,用金线4焊接连接电路;
d、陶瓷基板1上放置一多孔金属模板5,每个孔道51中容纳一个焊好线的晶片3;
e、将荧光粉与硅胶配制成硅胶荧光粉通过喷射或点胶的方式注入金属模板5的每个孔道51,将晶片3及金线4全部覆盖;
f、按烘烤温度:120~150℃,烘烤时间:1~2小时的要求,使硅胶荧光粉固化;
g、将金属模板5取出,此时即在陶瓷基板1上形成多个独立的覆盖晶片3的荧光硅胶层6;
h、将一具有半球形凹腔的金属模板盖在荧光硅胶层6上,将配制好的硅胶注入金属模板的半球形凹腔内;
i、按烘烤温度:120~150℃,,烘烤时间:5分钟的要求,将硅胶固化成硅胶透镜7,脱模后切割成多个大功率白光LED。
本发明的目的还可以通过以下技术措施进一步实现:
前述的一种大功率白光LED制造方法,其中所述陶瓷基板1采用氧化铝或氮化铝材料烧制而成,所述荧光粉采用15~25um粒径的粗颗粒粉。
本发明的有益效果是:克服了现有大功率白光LED生产方式所带来的一致性差、有黄圈的问题,荧光粉的涂敷实现均匀化,而且不需要特殊定制型的晶片。采用导热率高达170w/m.K以上的陶瓷基板,利于大功率晶片的散热。陶瓷基板热形变系数极低,可切割成厚度在0.5~1mm,长宽尺寸在3~5mm的微小的单个发光单元,易于实现微型化。
附图说明
图1是在陶瓷基板上的金属模板孔道中注入硅胶荧光粉的示意图;
图2是脱模后陶瓷基板上荧光硅胶层的结构示意图;
图3是硅胶透镜成形脱模后的结构示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
如图1~图3所示,本发明包含下列步骤:
a、陶瓷基板1通过电镀高反射率的金属银或铝的方式覆盖固晶区域,有效地增加光线的反射率;并印刷成电路。
b、通过对陶瓷基板1的孔道注银的方式,连接其底部的高导热铜合金的散热热沉2。
c、采用导热率达15w/m.k以上的高导热银胶将长、宽在30mil(1mil=1/1000英寸=0.0254mm)以上的晶片3固定,用金线4焊接连接电路。
d、陶瓷基板1上放置一多孔金属模板5,每个孔道51中容纳一个焊好线的晶片3,如图1所示。
e、将荧光粉与硅胶配制成硅胶荧光粉,通过喷射或点胶的方式注入金属模板5的每个孔道51,将晶片3及金线4全部覆盖。
f、按烘烤温度:120~150℃,烘烤时间:1~2小时的要求,使硅胶荧光粉固化。
g、将金属模板5取出,此时即在陶瓷基板1上形成多个独立的覆盖晶片3的荧光硅胶层6,如图2所示。
h、将一具有半球形或其他易于脱模的凹腔形状金属模板盖在荧光硅胶层6上,将配制好的硅胶,通过射出的方式,注入金属模板的凹腔内;
i、按烘烤温度:120~150℃,,烘烤时间:5分钟的要求,将硅胶固化成硅胶透镜7,脱模后切割成多个大功率白光LED,如图2所示。
本发明的陶瓷基板采用氧化铝或氮化铝的材料烧制而成,其导热率高达170w/m.K以上,利于大功率晶片的散热。陶瓷基板热形变系数极低,可切割成厚度在0.5~1mm,长宽尺寸在3~5mm的微小的单个发光单元,易于实现微型化。
本发明的荧光粉采用15~25um粒径的粗颗粒粉,可提升出光效率,
本发明的步骤h采用的半球形凹腔有利于脱模。本发明克服了现有大功率白光LED生产方式所带来的一致性差、有黄圈的问题,荧光粉的涂敷实现均匀化,而且不需要特殊定制型的晶片。
除上述实施例外,本发明还可以有其他实施方式,凡采用等同替换或等效变换形成的技术方案,均落在本发明要求的保护范围内。

Claims (4)

1.一种大功率白光LED制造方法,其特征在于,包含下列步骤:
a、在陶瓷基板(1)上电镀银或铝覆盖固晶区域并印刷出电路;
b、对陶瓷基板(1)的基板孔道(11)注银连接其底部的散热热沉(2);
c、采用导热率达15w/m.k以上的高导热银胶将长、宽在30mil以上的晶片(3)固定,用金线(4)焊接连接电路;
d、陶瓷基板(1)上放置一多孔金属模板(5),每个孔道(51)中容纳一个焊好线的晶片(3);
e、将荧光粉与硅胶配制成硅胶荧光粉通过喷射或点胶的方式注入金属模板(5)的每个孔道(51),将晶片(3)及金线(4)全部覆盖;
f、按烘烤温度:120~150℃,烘烤时间:1~2小时的要求,使硅胶荧光粉固化;
g、将金属模板(5)取出,此时即在陶瓷基板(1)上形成多个独立的覆盖晶片(3)的荧光硅胶层(6);
h、将一具有半球形凹腔的金属模板盖在荧光硅胶层(6)之上,将配制好的硅胶注入金属模板的半球形凹腔内;
i、按烘烤温度:120~150℃,,烘烤时间:5分钟的要求,将硅胶固化成硅胶透镜(7),脱模后切割成多个大功率白光LED。
2.如权利要求1所述的一种大功率白光LED制造方法,其特征在于,所述陶瓷基板(1)采用氧化铝材料烧制而成。
3.如权利要求1所述的一种大功率白光LED制造方法,其特征在于,所述陶瓷基板(1)采用氮化铝材料烧制而成。
4.如权利要求3所述的一种大功率白光LED制造方法,其特征在于,所述 荧光粉采用15~25um粒径的粗颗粒粉。 
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