CN101694857A - Manufacture method of low-attenuation white light LED - Google Patents
Manufacture method of low-attenuation white light LED Download PDFInfo
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- CN101694857A CN101694857A CN200910036065A CN200910036065A CN101694857A CN 101694857 A CN101694857 A CN 101694857A CN 200910036065 A CN200910036065 A CN 200910036065A CN 200910036065 A CN200910036065 A CN 200910036065A CN 101694857 A CN101694857 A CN 101694857A
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Abstract
The invention discloses a manufacture method of a low-attenuation white light LED, which comprises the following steps of (1), fixing a blue wafer in a base of a bracket, welding a line; (2), firstly adding inorganic filler in a main agent of silicon gel, uniformly stirring, then adding a curing agent to be uniformly mixed with the inorganic filler; (3), adding yellow fluorescent powder in the silicon gel containing two components, uniformly stirring and coating on the blue wafer to form a first coating layer, baking and curing;(4), adding a nano inorganic filler in a mixture of the silicon gel and epoxy glue, uniformly stirring, coating on the first coating layer to form a second coating layer, baking and curing; and (5), packing the periphery of the base by using the epoxy glue. A stress buffer layer is additionally arranged between the first coating layer and the externally packed epoxy glue, thereby changing the refraction angle of the light, reducing the reflection ratio of the light and the attenuation of the light, improving the light extraction efficiency of the white light LED, greatly improving the attenuation property of the product and ensuring the reliability of the product.
Description
Technical field
The present invention relates to a kind of manufacture method of white light LEDs, especially a kind of manufacture method of low-attenuation white light LED belongs to field of photoelectric technology.
Background technology
The LED light-emitting diode is a kind of solid-state semiconductor device, and it can directly be converted into light to electricity.White light LEDs is as light source, has the light efficiency height, characteristics such as the life-span is short, applicability is strong, environmentally safe, just progressively is applied to fields such as illumination, stop-light, automobile signal light, background light source.Existing white light LEDs generally adopts silica gel mixing yellow fluorescent powder to be coated on the blue wafer, and is peripheral with the epoxide-resin glue encapsulation again.This method can improve high temperature resistance, the anti-uv-ray of LED, but owing to have the slit between silica gel and covering epoxy resin, on this interface, because the ray refraction direction changes, the white light reflectance that blue-light excited yellow fluorescent powder produces increases, cause the decay of light big, light extraction efficiency is low.In addition, because the internal stress of silica gel is big, if long-term work, under the stress of silica gel, it is bright to cause the LED product often to lack, and product reliability descends.
Application number is that 200810067358 Chinese invention patent discloses a kind of low attenuation high light efficiency LED illuminating apparatus and preparation method thereof, this method is that aluminium base is set on heating panel, fixing blue chip on aluminium base, again translucent cover is fixed on the aluminium base, then silica gel or other transparent packing materials are injected between translucent cover and the aluminium base, wherein during the moulding translucent cover, fluorescent material is added one-shot forming.This method improves light extraction efficiency because fluorescent material separates with luminescent material, and the heat that makes luminescent material send can not cause the decay to fluorescent material, and simultaneously, the side of luminescent material does not have fluorescent material, can reduce the scattering of fluorescent material.But this method complex process, the cost height, and still fail to solve because the problem that optical attenuation that the slit between silica gel and epoxy resin causes and product reliability descend.
Summary of the invention
The manufacture method that the purpose of this invention is to provide the low-attenuation white light LED that a kind of light attenuation is few, technology is simple, product reliability is high.
The present invention is achieved by the following technical programs:
A kind of manufacture method of low-attenuation white light LED may further comprise the steps:
1) blue wafer is fixed in the pedestal of support, welds line;
2) in the host of silica gel, add a certain proportion of inorganic filler, stir;
3) the silica gel host that stirs is mixed with curing agent, stir;
4) in the silica gel that contains silica gel host and two kinds of components of curing agent, add a certain proportion of yellow fluorescent powder, stir;
5) silica-gel mixture that stirs is coated on the blue wafer, forms first overlay;
6) baking-curing first overlay;
7) in the mixture of silica gel and epoxide-resin glue, add a certain proportion of nanometer inorganic filler, stir, be coated on first overlay, form second overlay;
8) baking-curing second overlay;
9) seal the periphery of pedestal with the epoxy resin colloid.
Purpose of the present invention can also further realize by following technical measures.
The manufacture method of aforesaid a kind of low-attenuation white light LED, step 2 wherein) inorganic filler described in is the oxide of Ca, Mg, Ti, Si, Zr, Gd element, the particle diameter of this oxide is 3～10um, and when this oxide mixed with silica gel host, its weight accounted for 1%～5% of silica gel host weight.
The manufacture method of aforesaid a kind of low-attenuation white light LED, wherein the weight of yellow fluorescent powder described in the step 4) accounts for 5%～10% of silica gel weight.
The manufacture method of aforesaid a kind of low-attenuation white light LED, wherein the nanometer inorganic filler described in the step 7) is the oxide of Ca, Mg, Ti, Si, Zr, Gd element, the particle diameter of this oxide is 10～50nm, when this oxide mixed with silica gel and epoxide-resin glue, its weight accounted for 2%～5% of silica gel and epoxide-resin glue mixture weight.
Operating procedure of the present invention is simple, on blue wafer, cover first overlay earlier, on first overlay, cover second overlay again, with epoxy resin the periphery is encapsulated at last, by adopting the method for twice coating, between first overlay and covering epoxy resin, increase one deck stress-buffer layer, changed the ray refraction angle, the reflectivity of light reduces, and light attenuation is few, improved the fade performance of product when improving the light extraction efficiency of white light LEDs greatly, reliability of products also is guaranteed.In glue, add inorganic filler, strengthened the adhesive strength of glue.
Advantage of the present invention and characteristics will illustrate by the non-limitative illustration of following preferred embodiment and explain that these embodiment only provide as an example with reference to accompanying drawing.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
As shown in Figure 1, adopt the LED of manufacturing of the present invention to comprise support 1, blue wafer 2, gold thread 3, crystal-bonding adhesive 4, first overlay 5, second overlay 6, epoxy resin colloid 7; Blue wafer 2 usefulness crystal-bonding adhesives 4 are fixed in the pedestal of support 1, and gold thread 3 links to each other the electrode of blue wafer 2 with the electrode of support 1; First overlay 5 covers on the blue wafer 2, and second overlay 6 covers the top of first overlay 5, and epoxy resin colloid 7 is sealed the periphery of entire bracket 1.
Manufacture method of the present invention is as follows:
Embodiment one
1) blue wafer 2 is fixed in the pedestal of support 1, welds gold thread 3;
2) add the oxide of Ca, Mg, Ti, Si, Zr, Gd element in the host of silica gel, the weight of this oxide accounts for 1% of silica gel host weight, and its particle diameter is 3～10um, stirs;
3) the silica gel host that stirs is mixed with curing agent, stir;
4) add yellow fluorescent powder in the silica gel that contains silica gel host and two kinds of components of curing agent, the weight of yellow fluorescent powder accounts for 5% of silica gel weight, stirs;
5) silica-gel mixture that stirs is coated on the blue wafer 2, forming first overlay, 5, the first overlays 5 should seal blue wafer 2 fully;
6) baking-curing first overlay 5, baking temperature is 120 ℃～150 ℃, stoving time 1～2 hour;
7) in the mixture of silica gel and epoxide-resin glue, add the oxide of Ca, Mg, Ti, Si, Zr, Gd element, the weight of this oxide accounts for 2% of silica gel and epoxide-resin glue mixture weight, its particle diameter is 10～50nm, stir, at this moment, glue should have very high transparency, then it is coated on first overlay 5, forming second overlay, 6, the second overlays 6 should cover first overlay 5 fully;
8) baking-curing second overlay 6, baking temperature is 120 ℃～150 ℃, stoving time 1～2 hour;
9) with epoxy resin colloid 7 periphery of pedestal is encapsulated as different shapes.
Embodiment two
The manufacture method of present embodiment and embodiment one are basic identical, and difference is, in step 2), 4), 7) in the percentage by weight of oxide, yellow fluorescent powder adopt 3%, 7%, 4% respectively, allocate again.
Embodiment three
The manufacture method of present embodiment and embodiment one are basic identical, and difference is, in step 2), 4), 7) in the percentage by weight of oxide, yellow fluorescent powder adopt 5%, 10%, 5% respectively, allocate again.
In addition to the implementation, the present invention can also have other execution modes, and all employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop in the protection range of requirement of the present invention.
Claims (4)
1. the manufacture method of a low-attenuation white light LED is characterized in that: may further comprise the steps:
1) blue wafer is fixed in the pedestal of support, welds line;
2) in the host of silica gel, add a certain proportion of inorganic filler, stir;
3) the silica gel host that stirs is mixed with curing agent, stir;
4) in the silica gel that contains two kinds of components, add a certain proportion of yellow fluorescent powder, stir;
5) silica-gel mixture that stirs is coated on the blue wafer, forms first overlay;
6) baking-curing first overlay, baking temperature are 120 ℃～150 ℃, stoving time 1～2 hour;
7) in the mixture of silica gel and epoxide-resin glue, add a certain proportion of nanometer inorganic filler, stir, be coated on first overlay, form second overlay;
8) baking-curing second overlay, baking temperature are 120 ℃～150 ℃, stoving time 1～2 hour;
9) seal the periphery of pedestal with the epoxy resin colloid.
2. the manufacture method of a kind of low-attenuation white light LED as claimed in claim 1, it is characterized in that: step 2) described in inorganic filler be the oxide of Ca, Mg, Ti, Si, Zr, Gd element, the particle diameter of this oxide is 3～10um, when this oxide mixed with silica gel host, its weight accounted for 1%～5% of silica gel host weight.
3. the manufacture method of a kind of low-attenuation white light LED as claimed in claim 1, it is characterized in that: the weight of yellow fluorescent powder described in the step 4) accounts for 5%～10% of silica gel weight.
4. the manufacture method of a kind of low-attenuation white light LED as claimed in claim 1, it is characterized in that: nanometer inorganic filler described in the step 7) is the oxide of Ca, Mg, Ti, Si, Zr, Gd element, the particle diameter of this oxide is 10～50nm, when this oxide mixed with silica gel and epoxide-resin glue, its weight accounted for 2%～5% of silica gel and epoxide-resin glue mixture weight.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910036065A CN101694857A (en) | 2009-10-16 | 2009-10-16 | Manufacture method of low-attenuation white light LED |
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| CN200910036065A CN101694857A (en) | 2009-10-16 | 2009-10-16 | Manufacture method of low-attenuation white light LED |
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Cited By (18)
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| CN101882615A (en) * | 2010-07-12 | 2010-11-10 | 陕西科技大学 | Nano particle light distribution LED |
| CN101916815A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode and preparation method thereof |
| CN101916811A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode and preparation method thereof |
| CN101916813A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode (LED) and preparation method thereof |
| CN101916812A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode and preparation method thereof |
| CN102005519A (en) * | 2010-09-15 | 2011-04-06 | 山东华光光电子有限公司 | Method for packaging high-power white LED with high luminous efficiency |
| CN102074623A (en) * | 2010-11-23 | 2011-05-25 | 惠州雷曼光电科技有限公司 | Colored LED (Light-Emitting Diode) and manufacturing method thereof |
| CN102593326A (en) * | 2012-03-12 | 2012-07-18 | 江门昊坤光电科技有限公司 | Light-emitting diode (LED) packaging structure and process based on fluorescent powder dispersive excitation technology |
| CN102637805A (en) * | 2012-04-25 | 2012-08-15 | 嘉悠国际贸易（上海）有限公司 | UV (ultraviolet) silica gel packaged LED (light-emitting diode) and packaging technology thereof |
| CN102637811A (en) * | 2011-02-10 | 2012-08-15 | 三星Led株式会社 | Flip chip led package and manufacturing method thereof |
| CN102900985A (en) * | 2012-10-09 | 2013-01-30 | 钟振海 | LED (Light Emitting Diode) light emitting plate and manufacturing method thereof |
| CN103162230A (en) * | 2013-03-01 | 2013-06-19 | 上海嘉塘电子有限公司 | Light-emitting diode (LED) fluorescence lampshade |
| CN103872227A (en) * | 2014-03-27 | 2014-06-18 | 广州市爱易迪新材料科技有限公司 | Method for manufacturing LED lamp filament light source capable of illuminating by 360 degrees |
| CN104835898A (en) * | 2015-04-28 | 2015-08-12 | 江苏稳润光电有限公司 | Light-spot white-light LED and production method thereof |
| CN105552179A (en) * | 2016-01-25 | 2016-05-04 | 深圳市聚飞光电股份有限公司 | Implementation method for white LED (Light Emitting Diode) using MAlSiO4:Dy3+,Mn4+ single matrix phosphor |
| CN105702812A (en) * | 2016-01-25 | 2016-06-22 | 深圳市聚飞光电股份有限公司 | Method for achieving white-light LED through employing MAlSiO4: Tb3+, Eu2+ yellow-light fluorescent powder |
| CN106102402A (en) * | 2016-08-18 | 2016-11-09 | 强新正品（苏州）环保材料科技有限公司 | A kind of using method of silica gel sheet material |
| CN109888084A (en) * | 2019-02-27 | 2019-06-14 | 福建天电光电有限公司 | A kind of fluorescent glue and application its increase LED semiconductor light homogenization process |
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2009
- 2009-10-16 CN CN200910036065A patent/CN101694857A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916815A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode and preparation method thereof |
| CN101916811A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode and preparation method thereof |
| CN101916813A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode (LED) and preparation method thereof |
| CN101916812A (en) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | Light-emitting diode and preparation method thereof |
| CN101882615A (en) * | 2010-07-12 | 2010-11-10 | 陕西科技大学 | Nano particle light distribution LED |
| CN102005519A (en) * | 2010-09-15 | 2011-04-06 | 山东华光光电子有限公司 | Method for packaging high-power white LED with high luminous efficiency |
| CN102005519B (en) * | 2010-09-15 | 2012-02-08 | 山东华光光电子有限公司 | Method for packaging high-power white LED with high luminous efficiency |
| CN102074623A (en) * | 2010-11-23 | 2011-05-25 | 惠州雷曼光电科技有限公司 | Colored LED (Light-Emitting Diode) and manufacturing method thereof |
| CN102637811A (en) * | 2011-02-10 | 2012-08-15 | 三星Led株式会社 | Flip chip led package and manufacturing method thereof |
| CN102593326A (en) * | 2012-03-12 | 2012-07-18 | 江门昊坤光电科技有限公司 | Light-emitting diode (LED) packaging structure and process based on fluorescent powder dispersive excitation technology |
| CN102637805B (en) * | 2012-04-25 | 2015-03-18 | 嘉悠国际贸易（上海）有限公司 | UV (ultraviolet) silica gel packaged LED (light-emitting diode) and packaging technology thereof |
| CN102637805A (en) * | 2012-04-25 | 2012-08-15 | 嘉悠国际贸易（上海）有限公司 | UV (ultraviolet) silica gel packaged LED (light-emitting diode) and packaging technology thereof |
| CN102900985A (en) * | 2012-10-09 | 2013-01-30 | 钟振海 | LED (Light Emitting Diode) light emitting plate and manufacturing method thereof |
| CN103162230A (en) * | 2013-03-01 | 2013-06-19 | 上海嘉塘电子有限公司 | Light-emitting diode (LED) fluorescence lampshade |
| CN103872227B (en) * | 2014-03-27 | 2016-06-08 | 广州市爱易迪新材料科技有限公司 | The manufacture method of a kind of 360 degree of luminous LED filament light sources |
| CN103872227A (en) * | 2014-03-27 | 2014-06-18 | 广州市爱易迪新材料科技有限公司 | Method for manufacturing LED lamp filament light source capable of illuminating by 360 degrees |
| CN104835898A (en) * | 2015-04-28 | 2015-08-12 | 江苏稳润光电有限公司 | Light-spot white-light LED and production method thereof |
| CN105552179A (en) * | 2016-01-25 | 2016-05-04 | 深圳市聚飞光电股份有限公司 | Implementation method for white LED (Light Emitting Diode) using MAlSiO4:Dy3+,Mn4+ single matrix phosphor |
| CN105702812A (en) * | 2016-01-25 | 2016-06-22 | 深圳市聚飞光电股份有限公司 | Method for achieving white-light LED through employing MAlSiO4: Tb3+, Eu2+ yellow-light fluorescent powder |
| CN105552179B (en) * | 2016-01-25 | 2018-05-25 | 深圳市聚飞光电股份有限公司 | It is a kind of to use MAlSiO4:Dy3+,Mn4+The white light LEDs implementation method of single-matrix fluorescent powder |
| CN105702812B (en) * | 2016-01-25 | 2018-05-25 | 深圳市聚飞光电股份有限公司 | It is a kind of to use MAlSiO4:Tb3+,Eu2+The white light LEDs implementation method of yellow fluorescent powder |
| CN106102402A (en) * | 2016-08-18 | 2016-11-09 | 强新正品（苏州）环保材料科技有限公司 | A kind of using method of silica gel sheet material |
| CN109888084A (en) * | 2019-02-27 | 2019-06-14 | 福建天电光电有限公司 | A kind of fluorescent glue and application its increase LED semiconductor light homogenization process |
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Open date: 20100414 |