CN101694835A - 金属层的制造方法 - Google Patents

金属层的制造方法 Download PDF

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Publication number
CN101694835A
CN101694835A CN200910197109A CN200910197109A CN101694835A CN 101694835 A CN101694835 A CN 101694835A CN 200910197109 A CN200910197109 A CN 200910197109A CN 200910197109 A CN200910197109 A CN 200910197109A CN 101694835 A CN101694835 A CN 101694835A
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China
Prior art keywords
metal layer
metal level
manufacture method
metal
film layer
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Pending
Application number
CN200910197109A
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English (en)
Chinese (zh)
Inventor
许丹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Application filed by Shanghai Huahong Grace Semiconductor Manufacturing Corp filed Critical Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority to CN200910197109A priority Critical patent/CN101694835A/zh
Publication of CN101694835A publication Critical patent/CN101694835A/zh
Pending legal-status Critical Current

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CN200910197109A 2009-10-13 2009-10-13 金属层的制造方法 Pending CN101694835A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200910197109A CN101694835A (zh) 2009-10-13 2009-10-13 金属层的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910197109A CN101694835A (zh) 2009-10-13 2009-10-13 金属层的制造方法

Publications (1)

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CN101694835A true CN101694835A (zh) 2010-04-14

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CN200910197109A Pending CN101694835A (zh) 2009-10-13 2009-10-13 金属层的制造方法

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CN (1) CN101694835A (pt-PT)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105659389A (zh) * 2013-10-25 2016-06-08 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统
CN105659388A (zh) * 2013-10-25 2016-06-08 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1068681A (zh) * 1991-06-27 1993-02-03 三星电子株式会社 制造半导体器件的方法
US20040092100A1 (en) * 2002-11-08 2004-05-13 Taiwan Semiconductor Manufacturing Company Method to eliminate copper hillocks and to reduce copper stress
CN1790663A (zh) * 2004-11-12 2006-06-21 台湾积体电路制造股份有限公司 半导体元件及制造铜导线的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1068681A (zh) * 1991-06-27 1993-02-03 三星电子株式会社 制造半导体器件的方法
US20040092100A1 (en) * 2002-11-08 2004-05-13 Taiwan Semiconductor Manufacturing Company Method to eliminate copper hillocks and to reduce copper stress
CN1790663A (zh) * 2004-11-12 2006-06-21 台湾积体电路制造股份有限公司 半导体元件及制造铜导线的方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105659389A (zh) * 2013-10-25 2016-06-08 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统
CN105659388A (zh) * 2013-10-25 2016-06-08 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统
CN105659388B (zh) * 2013-10-25 2018-06-12 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统
CN105659389B (zh) * 2013-10-25 2018-10-19 夏普株式会社 光电转换元件、光电转换模块以及太阳光发电系统
US11031516B2 (en) 2013-10-25 2021-06-08 Sharp Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion module, and solar photovoltaic power generation system
US11121270B2 (en) 2013-10-25 2021-09-14 Sharp Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion module, and solar photovoltaic power generation system

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Application publication date: 20100414