CN101689856A - 使用选择性反向偏置的动态泄露控制 - Google Patents

使用选择性反向偏置的动态泄露控制 Download PDF

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Publication number
CN101689856A
CN101689856A CN200880012112A CN200880012112A CN101689856A CN 101689856 A CN101689856 A CN 101689856A CN 200880012112 A CN200880012112 A CN 200880012112A CN 200880012112 A CN200880012112 A CN 200880012112A CN 101689856 A CN101689856 A CN 101689856A
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CN
China
Prior art keywords
circuit
voltage
state
reverse bias
transistor
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Pending
Application number
CN200880012112A
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English (en)
Chinese (zh)
Inventor
D·清水
D·王
Q·陈
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN101689856A publication Critical patent/CN101689856A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Sources (AREA)
  • Logic Circuits (AREA)
CN200880012112A 2007-02-15 2008-02-13 使用选择性反向偏置的动态泄露控制 Pending CN101689856A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/707,602 2007-02-15
US11/707,602 US20080197914A1 (en) 2007-02-15 2007-02-15 Dynamic leakage control using selective back-biasing
PCT/US2008/053890 WO2008101036A1 (en) 2007-02-15 2008-02-13 Dynamic leakage control using selective back-biasing

Publications (1)

Publication Number Publication Date
CN101689856A true CN101689856A (zh) 2010-03-31

Family

ID=39577591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880012112A Pending CN101689856A (zh) 2007-02-15 2008-02-13 使用选择性反向偏置的动态泄露控制

Country Status (6)

Country Link
US (2) US20080197914A1 (ja)
EP (1) EP2127083A1 (ja)
JP (1) JP2010519612A (ja)
KR (1) KR101537792B1 (ja)
CN (1) CN101689856A (ja)
WO (1) WO2008101036A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102957413A (zh) * 2011-08-12 2013-03-06 Nxp股份有限公司 可调体偏置电路
CN103455118A (zh) * 2012-05-03 2013-12-18 德克萨斯仪器股份有限公司 复位电路中快速供电斜坡的检测
CN104007382A (zh) * 2013-02-20 2014-08-27 英特尔公司 高剂量辐射检测器
CN108028652A (zh) * 2015-09-08 2018-05-11 高通股份有限公司 功率门控器件及方法

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EP2085837A3 (en) * 2008-02-04 2013-11-06 Rockwell Automation Limited Method and apparatus for protecting against reverse current flow
US20100030500A1 (en) * 2008-07-29 2010-02-04 Gamal Refai-Ahmed Regulation of Power Consumption for Application-Specific Integrated Circuits
DE102008053536B4 (de) * 2008-10-28 2011-12-01 Atmel Automotive Gmbh Schaltung, Verwendung und Verfahren zum Betrieb einer Schaltung
US20110189836A1 (en) * 2010-02-04 2011-08-04 Macronix International Co., Ltd. Ion/ioff in semiconductor devices by utilizing the body effect
CN102194871A (zh) * 2010-03-12 2011-09-21 旺宏电子股份有限公司 半导体元件的操作方法
US8225123B2 (en) 2010-05-26 2012-07-17 Freescale Semiconductor, Inc. Method and system for integrated circuit power supply management
KR101169354B1 (ko) * 2011-08-17 2012-07-30 테세라, 인코포레이티드 반도체 패키징을 위한 전력 증폭 회로
JP5943716B2 (ja) 2012-06-04 2016-07-05 キヤノン株式会社 現像カートリッジ
CN103488267A (zh) * 2012-06-12 2014-01-01 鸿富锦精密工业(武汉)有限公司 电源控制电路
JP6003420B2 (ja) 2012-09-06 2016-10-05 富士通株式会社 回路システムおよび半導体装置
US9438025B1 (en) 2013-03-11 2016-09-06 Defense Electronics Corporation Radiation hardened chip level integrated recovery apparatus, methods, and integrated circuits
US8884683B1 (en) * 2013-07-08 2014-11-11 Samsung Electronics Co., Ltd. Semiconductor integrated circuit and operating method of semiconductor integrated circuit
US9584118B1 (en) 2015-08-26 2017-02-28 Nxp Usa, Inc. Substrate bias circuit and method for biasing a substrate
US9571104B1 (en) * 2015-10-19 2017-02-14 Texas Instruments Incorporated Programmable body bias power supply
CN105717409B (zh) * 2016-01-20 2018-07-31 广东欧珀移动通信有限公司 电子设备的漏电检测方法及系统
KR20180135628A (ko) 2017-06-13 2018-12-21 에스케이하이닉스 주식회사 전원 게이팅 회로를 포함하는 반도체 장치
US10090227B1 (en) 2017-07-13 2018-10-02 Globalfoundries Inc. Back biasing in SOI FET technology
CN108628792B (zh) * 2018-05-14 2021-02-19 福建科立讯通信有限公司 通信接口防电流泄漏系统及方法
KR102463983B1 (ko) 2018-12-26 2022-11-07 삼성전자 주식회사 누설 전류를 차단하기 위한 증폭기 및 상기 증폭기를 포함하는 전자 장치
CN116027842B (zh) * 2023-03-24 2023-06-23 长鑫存储技术有限公司 功率控制电路、存储器及电子设备

Citations (1)

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JPH10187270A (ja) * 1998-01-14 1998-07-14 Hitachi Ltd 半導体集積回路装置

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US5745375A (en) * 1995-09-29 1998-04-28 Intel Corporation Apparatus and method for controlling power usage
JPH09293789A (ja) * 1996-04-24 1997-11-11 Mitsubishi Electric Corp 半導体集積回路
US6411156B1 (en) * 1997-06-20 2002-06-25 Intel Corporation Employing transistor body bias in controlling chip parameters
US6433584B1 (en) * 1998-06-18 2002-08-13 Hitachi, Ltd. Semiconductor integrated circuit
US6657634B1 (en) * 1999-02-25 2003-12-02 Ati International Srl Dynamic graphics and/or video memory power reducing circuit and method
JP3928837B2 (ja) * 1999-09-13 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路装置
JP2001337309A (ja) * 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 液晶ディスプレイ装置
JP3762856B2 (ja) * 2000-05-30 2006-04-05 株式会社ルネサステクノロジ 半導体集積回路装置
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US7295036B1 (en) * 2005-11-30 2007-11-13 Altera Corporation Method and system for reducing static leakage current in programmable logic devices

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JPH10187270A (ja) * 1998-01-14 1998-07-14 Hitachi Ltd 半導体集積回路装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102957413A (zh) * 2011-08-12 2013-03-06 Nxp股份有限公司 可调体偏置电路
CN102957413B (zh) * 2011-08-12 2015-03-04 Nxp股份有限公司 可调体偏置电路与可调体偏置方法
CN103455118A (zh) * 2012-05-03 2013-12-18 德克萨斯仪器股份有限公司 复位电路中快速供电斜坡的检测
CN103455118B (zh) * 2012-05-03 2018-04-13 德克萨斯仪器股份有限公司 复位电路中快速供电斜坡的检测
CN104007382A (zh) * 2013-02-20 2014-08-27 英特尔公司 高剂量辐射检测器
CN104007382B (zh) * 2013-02-20 2017-05-31 英特尔公司 高剂量辐射检测器
US9690578B2 (en) 2013-02-20 2017-06-27 Intel Corporation High dose radiation detector
CN108028652A (zh) * 2015-09-08 2018-05-11 高通股份有限公司 功率门控器件及方法

Also Published As

Publication number Publication date
US8314647B2 (en) 2012-11-20
KR101537792B1 (ko) 2015-07-20
KR20090119911A (ko) 2009-11-20
EP2127083A1 (en) 2009-12-02
JP2010519612A (ja) 2010-06-03
WO2008101036A1 (en) 2008-08-21
US20080197914A1 (en) 2008-08-21
US20110279938A1 (en) 2011-11-17

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Application publication date: 20100331