CN101675657B - 具有增益控制的图像传感器像素 - Google Patents

具有增益控制的图像传感器像素 Download PDF

Info

Publication number
CN101675657B
CN101675657B CN200880014156.8A CN200880014156A CN101675657B CN 101675657 B CN101675657 B CN 101675657B CN 200880014156 A CN200880014156 A CN 200880014156A CN 101675657 B CN101675657 B CN 101675657B
Authority
CN
China
Prior art keywords
charge
providing
voltage conversion
time
conversion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200880014156.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN101675657A (zh
Inventor
C·帕克斯
J·T·坎普顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
Original Assignee
Omnivision Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Technologies Inc filed Critical Omnivision Technologies Inc
Publication of CN101675657A publication Critical patent/CN101675657A/zh
Application granted granted Critical
Publication of CN101675657B publication Critical patent/CN101675657B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
CN200880014156.8A 2007-05-01 2008-04-22 具有增益控制的图像传感器像素 Active CN101675657B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/742,883 US8159585B2 (en) 2007-05-01 2007-05-01 Image sensor pixel with gain control
US11/742,883 2007-05-01
PCT/US2008/005148 WO2008133861A1 (en) 2007-05-01 2008-04-22 Image sensor pixel with gain control

Publications (2)

Publication Number Publication Date
CN101675657A CN101675657A (zh) 2010-03-17
CN101675657B true CN101675657B (zh) 2014-09-10

Family

ID=39473856

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880014156.8A Active CN101675657B (zh) 2007-05-01 2008-04-22 具有增益控制的图像传感器像素

Country Status (7)

Country Link
US (2) US8159585B2 (cg-RX-API-DMAC7.html)
EP (2) EP2140676B1 (cg-RX-API-DMAC7.html)
JP (1) JP5230726B2 (cg-RX-API-DMAC7.html)
KR (1) KR101388276B1 (cg-RX-API-DMAC7.html)
CN (1) CN101675657B (cg-RX-API-DMAC7.html)
TW (1) TWI450579B (cg-RX-API-DMAC7.html)
WO (1) WO2008133861A1 (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136285A2 (en) * 2008-04-16 2009-11-12 Quantum Semiconductor Llc Pixel circuitry for ultra wide dynamic range
JP4538528B2 (ja) * 2008-12-26 2010-09-08 廣津 和子 固体撮像素子
US8411184B2 (en) * 2009-12-22 2013-04-02 Omnivision Technologies, Inc. Column output circuits for image sensors
US9000500B2 (en) 2009-12-30 2015-04-07 Omnivision Technologies, Inc. Image sensor with doped transfer gate
FR2995725A1 (fr) * 2012-09-19 2014-03-21 St Microelectronics Sa Procede de commande d'un pixel cmos
CN102843524B (zh) * 2012-09-25 2015-09-23 中国科学院上海高等研究院 Cmos图像传感器及其工作方法
JP6578942B2 (ja) * 2013-03-14 2019-09-25 株式会社ニコン 撮像ユニット、電子機器、プログラム、および制御方法
US9578223B2 (en) 2013-08-21 2017-02-21 Qualcomm Incorporated System and method for capturing images with multiple image sensing elements
US9160958B2 (en) 2013-12-18 2015-10-13 Omnivision Technologies, Inc. Method of reading out an image sensor with transfer gate boost
JP6254048B2 (ja) * 2014-06-05 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置
KR102591364B1 (ko) 2015-09-23 2023-10-19 삼성디스플레이 주식회사 광 센서 및 이를 포함하는 표시 장치
CN105681692B (zh) * 2016-01-11 2018-10-30 珠海艾思克科技有限公司 Cmos图像传感器及其复位噪声评估方法
DE102016212784A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels
JP6420450B2 (ja) * 2017-11-29 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
US11317038B2 (en) 2017-12-19 2022-04-26 SmartSens Technology (HK) Co., Ltd. Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof
JP7299680B2 (ja) * 2018-08-23 2023-06-28 キヤノン株式会社 撮像装置及び撮像システム
US11114482B2 (en) 2019-11-20 2021-09-07 Gigajot Technology, Inc. Scalable-pixel-size image sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1643755A1 (en) * 2004-10-01 2006-04-05 OmniVision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
CN1833429A (zh) * 2003-06-11 2006-09-13 微米技术有限公司 双转换增益成像器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251480A (ja) * 1992-03-04 1993-09-28 Sony Corp 電荷電圧変換装置
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム
JP3592106B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
US6730897B2 (en) * 2000-12-29 2004-05-04 Eastman Kodak Company Linearity and dynamic range for complementary metal oxide semiconductor active pixel image sensors
US6960796B2 (en) * 2002-11-26 2005-11-01 Micron Technology, Inc. CMOS imager pixel designs with storage capacitor
JP2004336469A (ja) * 2003-05-08 2004-11-25 Fuji Film Microdevices Co Ltd 固体撮像素子、撮像装置、及び画像処理方法
US7026596B2 (en) * 2003-10-30 2006-04-11 Micron Technology, Inc. High-low sensitivity pixel
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP4380439B2 (ja) * 2004-07-16 2009-12-09 ソニー株式会社 データ処理方法およびデータ処理装置並びに物理量分布検知の半導体装置および電子機器
KR100656666B1 (ko) * 2004-09-08 2006-12-11 매그나칩 반도체 유한회사 이미지 센서
US20060103749A1 (en) * 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
US7830437B2 (en) * 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7238926B2 (en) * 2005-06-01 2007-07-03 Eastman Kodak Company Shared amplifier pixel with matched coupling capacitances
KR101010489B1 (ko) 2005-06-21 2011-01-21 미츠비시덴키 가부시키가이샤 프로그램 실행 시스템을 위한 프로그래밍 시스템 및검사장치용 프로그램 작성 시스템
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
JP4747781B2 (ja) * 2005-10-27 2011-08-17 船井電機株式会社 撮像装置
JP4650249B2 (ja) * 2005-12-13 2011-03-16 船井電機株式会社 撮像装置
JP4747858B2 (ja) * 2006-01-27 2011-08-17 船井電機株式会社 撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1833429A (zh) * 2003-06-11 2006-09-13 微米技术有限公司 双转换增益成像器
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
EP1643755A1 (en) * 2004-10-01 2006-04-05 OmniVision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node

Also Published As

Publication number Publication date
EP2150038A2 (en) 2010-02-03
JP5230726B2 (ja) 2013-07-10
TWI450579B (zh) 2014-08-21
US20080273104A1 (en) 2008-11-06
KR20100016124A (ko) 2010-02-12
US20120168611A1 (en) 2012-07-05
US8159585B2 (en) 2012-04-17
TW200922284A (en) 2009-05-16
US8717476B2 (en) 2014-05-06
EP2140676A1 (en) 2010-01-06
EP2150038B1 (en) 2013-06-12
WO2008133861A1 (en) 2008-11-06
JP2010526479A (ja) 2010-07-29
KR101388276B1 (ko) 2014-04-22
EP2140676B1 (en) 2015-08-19
EP2150038A3 (en) 2012-05-30
CN101675657A (zh) 2010-03-17

Similar Documents

Publication Publication Date Title
CN101675657B (zh) 具有增益控制的图像传感器像素
US10566360B2 (en) Hybrid analog-digital pixel implemented in a stacked configuration
US7427790B2 (en) Image sensor with gain control
CN102098456B (zh) 可扩大动态范围的固体摄像装置
KR101398767B1 (ko) 축소된 픽셀 영역 이미지 센서
CN207369180U (zh) 全局快门成像像素和包括成像像素阵列的图像传感器
US10375362B2 (en) Imaging device and camera system
JP5934930B2 (ja) 固体撮像装置およびその駆動方法
US7468501B2 (en) Linear dynamic range enhancement in a CMOS imager
CN101902585B (zh) 固体摄像装置
CN113923389A (zh) 摄像元件
JP2013031226A (ja) Ｃｍｏｓイメージセンサのための、小サイズ、高利得及び低ノイズのピクセル
JP2001177775A (ja) 固体撮像装置、撮像システム及び固体撮像装置の駆動方法
US11252352B2 (en) Pixel sensor cell for CMOS image sensors with enhanced conversion gain at high dynamic range capability
CN210168124U (zh) 图像传感器
KR100962470B1 (ko) 고체 촬상 소자의 픽셀 회로
US20130070134A1 (en) Low Noise CMOS Pixel Array
US20050274873A1 (en) CCD imaging array with improved charge sensing circuit
WO2011105018A1 (ja) 固体撮像装置及びカメラシステム
US20060119733A1 (en) Image sensor for minimizing variation of control signal level
JP2005167451A (ja) 保持回路及びそれを有する固体撮像装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: FULL VISION TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK

Effective date: 20110701

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: STATE OF NEW YORK, THE USA TO: STATE OF CALIFORNIA, THE USA

TA01 Transfer of patent application right

Effective date of registration: 20110701

Address after: California, USA

Applicant after: Full Vision Technology Co., Ltd.

Address before: American New York

Applicant before: Eastman Kodak Co.

C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: OmniVision Technologies, Inc.

Address before: California, USA

Patentee before: Full Vision Technology Co., Ltd.