CN101667533A - Plasma processing method and plasma processing apparatus - Google Patents
Plasma processing method and plasma processing apparatus Download PDFInfo
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- CN101667533A CN101667533A CN200910173200A CN200910173200A CN101667533A CN 101667533 A CN101667533 A CN 101667533A CN 200910173200 A CN200910173200 A CN 200910173200A CN 200910173200 A CN200910173200 A CN 200910173200A CN 101667533 A CN101667533 A CN 101667533A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Abstract
The invention relates to a plasma processing method and a plasma processing device. In a cathode coupling manner, a deposited film is prevented from additionally arranging on an electrode of an anodeside possibly to avoid the influence on subsequent procedures and improve the uniformity of the processing possibly. A processed base plate (W) is loaded on a base (16) of a lower electrode and a high-frequency power supply (30) exerts a high frequency for generation of the plasma. An upper electrode (34) arranged above the base (16) and relatively configured in parallel with the base is mounted in a cavity (10) through an annular isolator (35) in an electric flotation state. A variable-capacitance variable capacitor (86) is arranged in the space (50) between the upper surface of the upper electrode (34) and the ceiling of the cavity (10). The capacitance of the variable capacitor (86) is varied by a capacitance control part (85) according to processing conditions, and the ground capacitance of the upper electrode (34) is switched.
Description
This case is
On March 30th, 2007, application number is
200710091348.6, denomination of invention is
Method of plasma processing and plasma processing apparatusThe dividing an application of patent application.
Technical field
The present invention relates to processed substrate is implemented the technology of plasma treatment, relate in particular to the plasma processing apparatus and the method for plasma processing of capacitive coupling type.
Background technology
At semiconductor device or FPD (Flat Panel Display: in the processing of the etching in manufacturing process flat-panel monitor), deposition, oxidation and sputter etc., often utilize plasma in order in handling gas, to carry out good reaction with lower temperature.In the prior art, in the plasma processing apparatus of piece page, especially plasma-etching apparatus, the plasma processing apparatus of capacitive coupling type has become main flow.
In general, the plasma processing apparatus of capacitive coupling type disposes upper electrode and lower electrode abreast in the container handling that forms as vacuum chamber, the processed substrate of mounting (semiconductor wafer, glass substrate etc.) on lower electrode applies high frequency voltage either party of two electrodes.Rely on the electric field that between two electrodes, forms by this high frequency voltage that electronics is quickened, produce plasma by electronics and the ionization by collision of handling gas, on substrate surface, implement the microfabrication (for example etching and processing) that needs by free radical in the plasma and ion.Here, be connected on the high frequency electric source via the isolating capacitor in the adaptation (blockingcapacitor), just come work as negative electrode (cathode) (negative electrode) owing to applied a high-frequency lateral electrode.
On the lower electrode of supporting substrates, apply high-frequency it is used as the negative electrode coupled modes of negative electrode, by utilizing self bias voltage on lower electrode, produce that the ion in the plasma almost vertically is incorporated on the substrate, might carry out anisotropic etching.In addition, the negative electrode coupled modes, deposit (pile up sediment, be designated hereinafter simply as " deposition ") at polymer etc. is being paid in the technology on upper electrode easily, also has that to rely on the bombardment of inciding the ion on the upper electrode be the advantage that sputter can be removed deposited film (add and oxide-film is arranged too).
Patent documentation 1 Japanese kokai publication hei 6-283474
Use the existing capacitive coupling plasma processing apparatus of negative electrode coupled modes, in general will not apply the upper electrode DC earthing of the anode-side of high-frequency voltage.Usually, because container handling is made up of the metal of aluminium or stainless steel etc. and by safety ground, can be by container handling with upper electrode as earthing potential, so adopt upper electrode directly is attached to the structure of forming the structure of one on the ceiling of container handling or adopting the ceiling with container handling intactly to be used as upper electrode.
Yet,, require highdensity plasma under low pressure along with the miniaturization of design rule in the semiconductor fabrication process in recent years, in capacitive coupling plasma processing apparatus, the frequency of high-frequency electricity uprises gradually, and recently, standard is used the above frequency of 40MHz.Yet, frequency gets higher, its high-frequency current is assembled the density of the plasma that generates in the processing space between two electrodes at the core of electrode, also than at electrode edge portion side height, the problem that the inner evenness of technology reduces strengthens in electrode centers portion side.
Summary of the invention
The present invention proposes in view of above-mentioned prior art problems point, its first purpose provides in the negative electrode coupled modes, prevent additional deposition film on the electrode of anode-side as far as possible and subsequent handling is impacted, and improve inhomogeneity method of plasma processing and the plasma processing apparatus of handling as far as possible.
In addition, second purpose of the present invention provides a kind of method of plasma processing and plasma processing apparatus, this plasma processing method and plasma processing apparatus be by repeating the number of times of plasma treatment, also can stably guarantee the uniformity handled over time even produce in the processing environment in container handling.
In order to reach above-mentioned first purpose, first kind of method of plasma processing of the present invention, it is characterized in that: but in vacuum, in the container handling of ground connection, the spaced and parallel that separates regulation disposes first electrode and second electrode, make it relative by the processed substrate of second electrode support with above-mentioned first electrode, to carrying out the pressure that vacuum exhaust reaches regulation in the above-mentioned container handling, to above-mentioned first electrode, processing space between the sidewall of above-mentioned second electrode and above-mentioned container handling provides desirable processing gas, and on above-mentioned second electrode, apply first high frequency, by the plasma that in above-mentioned processing space, generates aforesaid substrate is implemented desirable processing, wherein, via insulator or space above-mentioned first electrode is installed in the above-mentioned container handling, and variable portion electrically is connected on the earthing potential via the variable electrostatic capacitance of electrostatic capacitance, according to the treatment conditions of aforesaid substrate being implemented plasma treatment, switch the electrostatic capacitance of the variable portion of above-mentioned electrostatic capacitance.
In addition, first kind of plasma processing apparatus of the present invention is characterized in that, comprising: but container handling vacuum exhaust, ground connection; First electrode in above-mentioned container handling via insulant or space mounting; Electrically be connected the variable variable portion of electrostatic capacitance of electrostatic capacitance between above-mentioned first electrode and the earthing potential; Second electrode of processed substrate is supported at the interval and the above-mentioned first electrode configured in parallel that separate regulation in above-mentioned container handling, and relative with above-mentioned first electrode; Processing space between the sidewall of above-mentioned first electrode, above-mentioned second electrode and above-mentioned container handling provides the processing gas supply part of desirable processing gas; In order to generate the plasma of above-mentioned processing gas in above-mentioned processing space, on above-mentioned second electrode, apply the first high frequency power supply of first high frequency; And, switch the electrostatic capacitance control part of the electrostatic capacitance of the variable portion of above-mentioned electrostatic capacitance according to the treatment conditions of the plasma treatment that aforesaid substrate is implemented.
In the structure of capacitive coupling type of the present invention, if will be applied on second electrode from the high frequency of high frequency electric source, then by the high-frequency discharge between the sidewall (inwall) of the high-frequency discharge between second electrode and first electrode and second electrode and container handling, in handling the space, generate the plasma of handling gas, the plasma that is generated reaches the radial direction diffuse outside especially upward to the four directions, and the electronic current in the plasma flows to the earth by first electrode or container handling sidewall etc.
Here,, switch the electrostatic capacitance of the variable portion of electrostatic capacitance, can at random switch on every side the electrostatic capacitance or the ground capacity of first electrode to low electric capacity (high impedance) from high capacitance (Low ESR) by the treatment conditions of handling according to this plasma.Especially, the pattern of high capacitance (Low ESR) ground connection, make the ratio that in the electronic current of plasma, between first electrode and second electrode, flows through become big, can strengthen sputter effect, so the processing of paying easily on second electrode for deposited films such as polymer is favourable at the ion of first electrode.In addition, the pattern of low electric capacity (high impedance) ground connection, make the ratio that in the electronic current of plasma, between the sidewall of first electrode and container handling, flows through become big, the spatial distribution that can make plasma density is to the expansion of the radial direction outside, so paying processing also no problem on second electrode (for example processing of final operation) even be applicable to inhomogeneity processing and the deposited film paying attention to handling.
In addition, can also apply than low second high frequency of the frequency of first high frequency on second electrode or on first electrode, apply desirable direct voltage.
In order to reach above-mentioned second purpose, second kind of method of plasma processing of the present invention, it is characterized in that: but in vacuum, in the container handling of ground connection, the spaced and parallel that separates regulation disposes first electrode and second electrode, make it relative by the processed substrate of second electrode support with above-mentioned first electrode, to carrying out the pressure that vacuum exhaust reaches regulation in the above-mentioned container handling, to above-mentioned first electrode, processing space between the sidewall of above-mentioned second electrode and above-mentioned container handling provides desirable processing gas, and on above-mentioned second electrode, apply first high frequency, by the plasma that in above-mentioned processing space, generates aforesaid substrate is implemented desirable processing, wherein, via insulator or space above-mentioned first electrode is installed in the above-mentioned container handling, and variable portion electrically is connected on the earthing potential via the variable electrostatic capacitance of electrostatic capacitance, switches the electrostatic capacitance of the variable portion of above-mentioned electrostatic capacitance according to the processing sheet number of the aforesaid substrate of implementing plasma treatment.
In addition, second kind of plasma processing apparatus of the present invention is characterized in that, comprising: but container handling vacuum exhaust, ground connection; First electrode in above-mentioned container handling via insulant or space mounting; Electrically be connected the variable variable portion of electrostatic capacitance of electrostatic capacitance between above-mentioned first electrode and the earthing potential; Second electrode of processed substrate is supported at the interval and the above-mentioned first electrode configured in parallel that separate regulation in above-mentioned container handling, and relative with above-mentioned first electrode; Processing space between the sidewall of above-mentioned first electrode, above-mentioned second electrode and above-mentioned container handling provides the processing gas supply part of desirable processing gas; In order to generate the plasma of above-mentioned processing gas in above-mentioned processing space, on above-mentioned second electrode, apply the first high frequency power supply of first high frequency; And the electrostatic capacitance control part that switches the electrostatic capacitance of the variable portion of above-mentioned electrostatic capacitance according to the processing sheet number of the aforesaid substrate of implementing plasma treatment.
In above-mentioned second method or device, switch the electrostatic capacitance of the variable portion of above-mentioned electrostatic capacitance by processing sheet number according to the aforesaid substrate of implementing plasma treatment, can control distribution character in the face of the spatial characteristics of plasma density even processing, the result can stably keep the uniformity handled.
The preferred execution mode according to the present invention is transferred the value of the electrostatic capacitance of the variable portion of electrostatic capacitance greatly in advance, along with the increase of handling the sheet number, reduces the value of electrostatic capacitance.
According to method of plasma processing of the present invention and plasma processing apparatus, by aforesaid structure and effect, can be in the negative electrode coupled modes, prevent additional deposition film on the electrode of anode-side as far as possible and subsequent handling is impacted, and improve the uniformity of handling as far as possible.In addition, by repeating the number of times of plasma treatment, also can stably guarantee the uniformity handled over time even produce in the processing environment in container handling.
Description of drawings
Fig. 1 is the longitudinal section of structure of the plasma-etching apparatus of expression an embodiment of the invention.
Fig. 2 is the figure of an example of structure of the variable capacitor in the plasma-etching apparatus of expression execution mode.
Fig. 3 is the figure of other example of a structure of the variable capacitor in the plasma-etching apparatus of expression execution mode.
Fig. 4 is the longitudinal section of structure of plasma-etching apparatus of a variation of expression execution mode.
Fig. 5 is the longitudinal section of structure of plasma-etching apparatus of a variation of expression execution mode.
To be medelling ground expression switch to the figure of the style of high-frequency discharge in the chamber under the situation of high capacitance (Low ESR) ground connection pattern with the plasma-etching apparatus of execution mode to Fig. 6.
To be medelling ground expression switch to the figure of the style of high-frequency discharge in the chamber under the situation of low electric capacity (high impedance) ground connection pattern with the plasma-etching apparatus of execution mode to Fig. 7.
Fig. 8 is the skiagraph of the structure of the plasma-etching apparatus that uses of the engraving method of expression execution mode.
Fig. 9 is the rough sectional view of rapid each stage condition of multistep in the engraving method of expression execution mode.
Symbol description
10 chambers (container handling)
16 pedestals (lower electrode)
30 high frequency electric sources
34 upper electrodes
35 ying-shaped insulators
36 battery lead plates
36a gas squit hole
38 electrode supports
42 gas supply pipes
44 handle gas supply pipe
50 spaces
52 insulators
64 high frequency electric sources
70,72 capacitors
85 electrostatic capacitance control parts
86 variable capacitances (the variable portion of electrostatic capacitance)
Embodiment
Below, with reference to accompanying drawing the execution mode that the present invention is fit to is described.
In Fig. 1, represented the structure of the plasma processing apparatus of an embodiment of the invention.This plasma processing unit constitutes as cathode coupled capacitive coupling type (parallel plate-type) plasma-etching apparatus, for example, has the cylindrical shape vacuum chamber (container handling) 10 that carries out the aluminium formation of peroxidating aluminium film processing (anodized) by the surface.Chamber 10 is ground connection safely.
In the bottom of chamber 10, dispose columned base support platform 14 via the insulation board 12 of pottery etc., be provided with the pedestal 16 that for example constitutes above the base support platform 14 at this by aluminium.Pedestal 16 constitutes lower electrode, as processed substrate-placing for example semiconductor wafer W is arranged on it.
On pedestal 16, be provided with and be used for the electrostatic chuck 18 of trying hard to keep and holding semiconductor wafer W by Electrostatic Absorption.This electrostatic chuck 18 is that the electrode 20 that will be made of conducting film is clamped into the structure between a pair of insulating barrier or the insulating trip, and DC power supply 22 electrically is connected on the electrode 20.Rely on direct voltage, can lean on the Coulomb force that semiconductor wafer W absorption is remained on the electrostatic chuck 18 from DC power supply 22.Around electrostatic chuck 18, on pedestal 16, dispose and be used to improve the etched inhomogeneity focusing ring 24 that for example constitutes by silicon.On the side of pedestal 16 and base support platform 14, paste and be added with the inwall parts 25 cylindraceous that for example constitute by quartz.
Be provided with the cryogen chamber 26 of for example extending at circumferencial direction in the inside of base support platform 14.Rely on be installed in outside cooling unit (not expressing among the figure) via pipe arrangement 27a, 27b in this cryogen chamber 26, the refrigerant that circulation provides set point of temperature is cooling water for example.Can control the treatment temperature of pedestal 16 semiconductor-on-insulator wafer W by means of the temperature of refrigerant.Moreover, supply with above electrostatic chuck 18 and between the back side of semiconductor wafer W from the heat-conducting gas of heat transfer gas feed mechanism (do not have among the figure expression) He gas for example by gas supply pipe line 28.
On pedestal 16, electrically connecting the high frequency electric source 30 that plasma generates usefulness via adaptation 32 and feeder rod used therein 33.The high-frequency that this high frequency electric source 30 carries out in the plasma treatment applying regulation to pedestal 16 in chamber 10 is the high frequency of 40MHz for example.
Above pedestal 16, the parallel upper electrode 34 that relatively is provided with this pedestal.This upper electrode 34 comprises having the battery lead plate 36 that semi-conducting materials a plurality of gas squit hole 36a, for example Si, SiC etc. constitute; With can be freely with loading and unloading supporting this battery lead plate 36, for example passed through the electrode support 38 that aluminium that pellumina handles constitutes in the surface by electric conducting material, be installed in the chamber 10 under electric float state via the insulator 35 of ring-type.Form the plasma span or handle space PS with the sidewall of chamber 10 by this upper electrode 34, pedestal 16.
Ying-shaped insulator 35 is for example by aluminium oxide (Al
2O
3) constitute and be installed into the gap between the sidewall of the outer peripheral face that stops up upper electrode 34 airtightly and chamber 10, when physically supporting upper electrode 34, constitute the part of the electrostatic capacitance between upper electrode 34 and the chamber 10.
In addition, be provided with in the inside of electrode support 38 and flow through for example path of cooling water (not expression among the figure) of cold-producing medium, rely on outside cooling unit the integral body of upper electrode 34 especially battery lead plate 36 to be adjusted to the temperature of regulation via cold-producing medium.In addition, more stable in order to make at the control of the temperature of upper electrode 34, can use the inside of electrode support 38 or above the structure of the heater (not having among the figure to represent) for example formed of installation by resistance heating element.
Be provided with gap on upper electrode 34 and between the ceiling of chamber 10, and be formed with space 50 there with suitable void size.Though this space 50 can be an airspace, but preferably constitute as the vacuum space, not only realized the heat blocking of upper electrode 34, also had the function that prevents the discharge between upper electrode 34 and the chamber 10 by means of the eliminating of gas with chamber 10 and even environment temperature.Space 50 is become under the situation of vacuum, and space PS carries out vacuum exhaust respectively with processing, relies on airtight construction to keep vacuum state.In this embodiment, prevent function, with all or part of (that represents among the figure is just top) of the inwall of insulator 52 covering spaces 50 of sheet in order further to improve discharge.Though can on this insulator 52, suitably use the resin of the polyimides system of good heat resistance, also can use Tai Fulong (registered trade mark) or quartz etc.
The space of the ring-type that forms between the sidewall of pedestal 16, base support platform 14 and chamber 10 becomes exhaust space, and the end of this exhaust space is provided with the exhaust outlet 54 of chamber 10.Exhaust apparatus 58 is connected to this exhaust outlet 54 by blast pipe 56.Exhaust apparatus 58 has the vacuum pump of turbomolecular pump etc., chamber 10 indoor especially can be handled the space PS desired vacuum degree that reduces pressure.In addition, on the sidewall of chamber 10, be equipped with moving into of semiconductor wafer W taken out of mouthful 60 gate valves that open and close 62.
This plasma Etaching device is provided with the variable capacitor 86 of variable capacitance in space 50, can be changed the electric capacity of variable capacitor 86 by for example top electrostatic capacitance control part 85 in the outside that is arranged on chamber 10.
Here, the structure example of in Fig. 2 and Fig. 3, having represented variable capacitor 86.This variable capacitor 86 has can be in contact or near first position above the upper electrode 34 and the conductor plate 88 from moving between second position that upper electrode 34 separates upward; Move up and down or change operating mechanism, for example hook stick 90 of position with making this conductor plate 88.Here, between conductor plate 88 and upper electrode 34, form capacitor.The area of conductor plate 88 is big more, and it is big more that the sensitivity of variable capacitance or scope can become.The operating mechanism 90 of Fig. 2 has the material of conductivity or has low-impedance material to constitute at high-frequency by the material of conductivity or to high-frequency, directly or via chamber 10 ground connection.The operating mechanism 90 of Fig. 3 can be the material of insulating properties.Electrostatic capacitance control part 85 has the stepping motor that for example can at random control rotation amount becomes operating mechanism 90 with rotation transformation with the rotating driveshaft of this stepping motor the motion changing mechanism (for example ball screw mechanism) of directly advancing (lifting) motion etc., can change the electric capacity of variable capacitor 86 by the variable control of conductor plate 88 height and positions continuously.Make the ceiling face of conductor plate 88 near chamber 10 more, it is more little that the ground capacity of upper electrode 34 just can become.On the contrary, make conductor plate 88 near above the upper electrode 34 more, it is big more that the ground capacity of upper electrode 34 just can become.Under opposite extreme situations, conductor plate 88 is contacted with upper electrode 34 and make upper electrode 34 ground connection, can make the ground capacity infinity.
In Fig. 4, represented variable 85 of the electrostatic capacitance of other execution mode.This execution mode, between the sidewall of upper electrode 34 and chamber 10, be provided with ying-shaped insulator 35, be formed with the fluid storage chamber 94 of ring-type in this ying-shaped insulator, becoming to derive and to import the structure of liquid (for example such organic solvent of the Galden) Q with suitable dielectric constant via pipe arrangement 92 from the outside of chamber 10.By changing kind (dielectric constant) or the amount of liquid of dielectricity liquid Q, can make the ground capacity of the electrostatic capacitance of ying-shaped insulator 35 integral body and upper electrode 34 variable.
In addition, provide the control signal of the electric capacity (desired value) of indication variable capacitor 86 to electrostatic capacitance control part 85 from the controller 96 of the order (sequence) of the action of controlling the each several part in this plasma processing unit and single unit system.
In this plasma Etaching device, in order to carry out etching, at first make gate valve 62 become out state and the semiconductor wafer W of processing object moved in the chamber 10, be positioned in electrostatic chuck 18 above.So it is that etching gas (in general being mist) imports in the chamber 10 that flow according to the rules or flow-rate ratio will be handled gas from processing gas supply part 44, make the pressure in the chamber 10 become set point by the vacuum exhaust that relies on exhaust apparatus 58.In addition, apply high frequency (40MHz) by high frequency electric source 30 power according to the rules to pedestal 16.In addition, apply direct voltage to the electrode 20 of electrostatic chuck 18, semiconductor wafer W is fixed on the electrostatic chuck 18 by DC power supply 22.The etching gas that spues from the shower nozzle of upper electrode 34 relies on the discharge of high-frequency electrical and plasmaization during handling space PS, rely on the film of the interarea of the free radical that produced by this plasma or ion pair semiconductor wafer W to carry out etching.
This capacitive coupling plasma Etaching device is by applying 40MHZ or the high-frequency electrical more than the 40MHz on pedestal (lower electrode) 16, with plasma densification under preferred disassociation state, even under the condition of low pressure more, also can form high-density plasma.And, be the negative electrode coupled modes, utilize self bias voltage that on pedestal 16, generates that the ion in the plasma almost vertically is incorporated on the wafer W, can carry out anisotropic etching.
In addition, will with plasma generate the higher frequency (for example 40MHz) of the ratio that adapts first high frequency and with ion introduce second high frequency of the lower frequency (for example 2MHz) that adapts overlapping, be applied to bottom two frequency overlaps on the lower electrode and apply mode and also be fine.As such apparatus structure, for example as shown in Figure 5, can set up to pedestal 16 and supply with high frequency electric source 64, adaptation 66 and the feeder rod used therein 68 that second high-frequency electrical is used.Two frequency overlaps apply in the mode in such bottom, can make the density optimization of the plasma that generates at processing space PS by first high frequency (40MHz), make on pedestal 16 self bias voltage or the sheath optimization that generates by second high frequency (2MHz), can realize the anisotropic etching that selectivity is higher.
Below, the effect of the variable capacitor (the variable portion of electrostatic capacitance) 86 in this plasma Etaching device is described.In Fig. 6 and Fig. 7, upper electrode 34 is that capacitor 70,72 electrically connects (ground connection) chamber 10 to earthing potential via variable capacitor 86 and fixed capacitor.Here, capacitor 70 is the electric capacity (fixed capacity) that exists between the sidewall of upper electrode 34 and chamber 10, is mainly given by ying-shaped insulator 35.On the other hand, capacitor 72 is arranged side by side with variable capacitance 86, is the electric capacity (fixed capacity) that exists between the ceiling of upper electrode 34 and chamber 10.Electrostatic capacitance around the upper electrode 34 ground capacity in other words is presented as the combined capacity that the electric capacity with the electric capacity of variable capacitor 86 and capacitor 70,72 adds together.
At first, heighten the electric capacity of variable capacitor 86, for example being chosen as to the ground capacity (combined capacity) with top electric capacity 34, the effect of the situation (under opposite extreme situations, being to make conductor plate 88 and upper electrode plate 34 contact, become the situation of infinitely-great capacitance) more than the 20000pF describes.In this case, as shown in Figure 6, if will be applied to from the high frequency of high frequency electric source 30 on the pedestal 16, then rely in the high-frequency discharge between pedestal 16 and the upper electrode 34 and in the high-frequency discharge between the sidewall of pedestal 16 and chamber 10 and in processing space PS, generate the plasma of handling gas, the plasma that is generated reaches the radial direction diffuse outside especially upward to the four directions, and the sidewall of the electronic current in the plasma by upper electrode 34 and chamber 10 etc. flows to the earth.Here, on pedestal 16, the frequency number of high frequency is high more, high-frequency current is easy more to be concentrated at the pedestal core by kelvin effect, and, because the upper electrode 34 of right opposite is a Low ESR ground connection via high capacitance, so it is quite low to flow to the ratio of sidewall of chamber 10 in the electronic current in plasma, major part flows to upper electrode 34, and flows to its core.Consequently, the spatial characteristics of plasma density becomes easily, and the highest and peripheral part past more radial direction outside of electrode centers part moves the distribution profile of low more chevron.Yet, on the other hand, rely on and flow through a large amount of high-frequency currents or electronic current, thereby also have the amount of incident of the ion that on upper electrode 34, causes to increase the one side that the sputter effect strengthens by self setovering to upper electrode 34.
Relative therewith, the electric capacity of variable capacitor 86 is turned down, be chosen as for example situation below the 250pF in ground capacity (combined capacity) with upper electrode 34, as shown in Figure 7, the plasma distribution of handling in the PS of space is expanded to the radial direction outside.Under these circumstances, if apply high frequency to pedestal 16 by high frequency electric source 30, then rely in high-frequency discharge between pedestal 16 and the upper electrode 34 and the high-frequency discharge between the sidewall of pedestal 16 and chamber 10, also can in handling space PS, generate the plasma of etching gas, the plasma that is generated reaches the radial direction diffuse outside upward, and the sidewall of the electronic current in the plasma by upper electrode 34 or chamber 10 etc. flows to the earth.So on pedestal 16, it is the same with the situation of Fig. 6 also that high-frequency current is concentrated at the pedestal core easily.Yet, because the ground capacity or the impedance of upper electrode 34 are low, so, also be difficult to flow from this upper electrode 34 to right opposite even high-frequency current concentrates on the core of pedestal 16.Therefore, the ratio that flows to the sidewall of chamber 10 in the electronic current in plasma is determined to not low, value according to ground capacity, promptly according to the capacitance of variable capacitor 86, can to respectively between pedestal 16 and the upper electrode 34 and the ratio of the electronic current that between the sidewall of pedestal 16 and chamber 10, flows through control arbitrarily.On the other hand, if the high-frequency current or the electronic currents that flow to upper electrode 34 tail off, the one side that then also has ion incidence amount on the upper electrode 34 and even sputter effect to reduce.
As mentioned above, the plasma-etching apparatus of this execution mode has the structure of the electrostatic capacitance that can change variable 86 of electrostatic capacitance, by suitably switch the ground capacity of upper electrode 34 according to treatment conditions, especially select any of high capacitance ground connection (Low ESR) pattern or low capacity earth (high impedance) pattern, memory effect described later is prevented and even the balance or the compromise selection optimization of attenuating and process uniformity, thereby can improve the processability of disposed of in its entirety.
Below, an example of the concrete plasma etching processing of the plasma-etching apparatus of this execution mode is described.This etching and processing is to form connecting hole (through hole) in the organic system low-k film as interlayer dielectric, becomes the processing of using bottom two frequency overlaps to apply mode (Fig. 5).
In Fig. 8, represented the detailed structure example of processing gas supply part 44 in this embodiment.On main gas supply pipe 42, be connected with the supply source of various unstrpped gases via each special use or branch's gas supply pipe, as treating-gas supply system.In this embodiment, as hereinafter described, owing to, use CF as the unstrpped gas of etching with mist
4, CHF
3, CH
3F, C
4F
8, Ar, N
26 kinds, so prepare that the gas supply source 100～110 of supplying with these unstrpped gases is arranged.Being respectively arranged with on each special gas supply pipe can be by controller 96 mass flow controller (MFC) 100a～110a and switch valve 100b～110b independent respectively and control at random.
On the interarea of the semiconductor wafer W of the object that becomes etching and processing, as shown in Fig. 9 (a), begin from the below lamination successively have multi-layer wiring structure lower layer side wiring layer 112, stop (barrier) layer 114, organic system low-k film (interlayer dielectric) 116 and mask 118.Wiring layer 112 is Cu wiring layers for example, is for example processed by dual damascene to form.Barrier layer 114 is for example to have
Silicon nitride (SiN) film of the thickness of (0.1 μ m), (Chemical Vapor Deposition: chemical vapour deposition (CVD)) method forms by for example CVD.Organic system low-k film 116 is that the SiOC that for example has the thickness of 1 μ m is the low-k film, is formed by for example CVD method.Mask 118 is resist films, is formed by common photoetching, has peristome 118a at the position of opening of through hole.
In this embodiment, carry out the etching of three step modes at the semiconductor wafer W of the handled object that relates to.At first,, deposit the etching that (deposition) handles as first step.The main etching condition of this first step is as follows.
Handle gas: CF
4/ CH
3F/N
2=flow 50/5/100sccm
Pressure in the chamber: 20mTorr
High frequency power: 40MHz/2MHz=1000/0W
In this first step, the CH that in etching gas, has used perfluocarbon (perfluorocarbon) to be
3F.So, CH
3The H molecule that plasma decomposes among the F goes out is very fast to react with F, is carried out exhaust as HF, thus, and residual easily C down.Its result, produce in large quantities the deposition of carbon system and nearby attached to the peristome 118a of Etching mask 118 and above, it becomes and improve the diaphragm that mask is selected ratio in subsequent handling.Yet by a large amount of generation polymer, and owing to do not apply second high frequency (2MHz) (that is, because a little less than the ion incidence of upper electrode 34) on pedestal 16, deposition is easily attached on the upper electrode 34.
According to such situation, at the ground capacity of upper electrode 34, as shown in Figure 5, the electric capacity of variable capacitor 86 is heightened, switch to high capacitance ground connection (Low ESR) pattern, under opposite extreme situations, become short circuit ground connection.Thus, improved incident efficient, promoted sputter, can make not additional deposition film at the ion of upper electrode 34.
Shown in Fig. 9 (b), this first step reaches the degree of depth of regulation, for example at the end that is formed at the hole 116a on the organic system low-k film 116
Near the degree of depth time finish.When this first step finishes, stop to supply with CF
4/ CH
3F/N
2Mist, promptly in off switch valve 100b, 104b, 110b, the output of high frequency electric source 30 placed closes (off).But the exhaust action of exhaust apparatus 58 keeps original state to continue.
Then, as second step, carry out main etching.Main etching condition in this second step is as follows.
Handle gas: CHF
3/ CF
4/ Ar/N
2=flow 40/30/1000/150sccm
Pressure in the chamber: 30mTorr
High frequency power: 40MHz/2MHz=1000/1000W
In second step, in relying on the plasma assisted etch of chemical reaction, add the ion-assisted etching that relies on ion exposure, carry out anisotropic etching at a high speed.In such,, begin the processing of second step, so be not subjected to the influence of the processing of first step owing to be under the state of the deposited film that generates in the processing first step before on upper electrode 34, being attached to.
But, in the processing of second step, from the CHF of perfluocarbon system
3Produce a large amount of polymer, even the time unlike first step, also additional deposition on upper electrode 34 easily, under long situation of processing time, deposited film savings and grow into bigger possibility and become big.
In view of this,, make the ground capacity of upper electrode 34 become the such high capacitance ground connection pattern of Fig. 5, under opposite extreme situations, become short circuit ground connection even in second step.Thus, improved at the incident efficient of the ion of upper electrode 34 and promoted ion sputtering, can make not additional deposition film.
Shown in Fig. 9 (c), second step reaches the degree of depth of regulation, for example at the end of the hole 116a of organic system low-k film 116
Near the degree of depth time finish.When this step finished, off switch valve 102b, 100b, 108b, 110b stopped CHF
3/ CF
4/ Ar/N
2The supply of mist.Simultaneously, the output of two high frequency electric sources 30,64 is temporarily placed close (off).
Then, as last third step, carried out etching.Main etching condition in this third step is as follows.
Handle gas: C
4F
8/ Ar/N
2=flow 6/1000/150sccm
Pressure in the chamber: 50mTorr
High frequency power: 40MHz/2MHz=1000/1000W
In third step, under the state of the anisotropy (perpendicular shape) of retaining hole 116a, organic system low-k film 116 is carried out etching, up to reaching basilar memebrane (silicon nitride) 62.Even under these circumstances, owing to be under the state of the deposited film that generates in the processing second step before being attached on upper electrode 34, the processing of beginning third step is not so be subjected to the influence of the processing of second step.
The C that in the processing of third step, in etching gas, uses
4F
8/ Ar/N
2Mist has the selection of pair basilar memebrane (silicon nitride) 62 than high such advantage, although produced the polymer of fluorocarbon, its generation is smaller, and, there is not the then processing of the subsequent handling of this third step.That is, in the processing of this third step, even on upper electrode 34, added deposited film, also need not consider since this deposited film to make later processing be subjected to the effect (memory effect) of influence of processing of front just passable.In addition, for example can clean the deposited film of removing in addition on the sidewall that is attached to upper electrode 34 or chamber 10 by plasma.
In view of this point, in third step, the ground capacity of upper electrode 34 is switched to represented low capacity earth (high impedance) pattern of Fig. 6.By such mode, can relatively reduce the electronic current that between pedestal 16 and upper electrode 34, flows through, and can relatively be increased in the electronic current that flows through between the sidewall of pedestal 16 and chamber 10, can make in the density of the plasma of handling space PS generation and expand to the radial direction outside.
Under these circumstances, though also can make etch-rate (particularly on radial direction) homogenizing spatially on the semiconductor wafer W,, the etch-rate that preferably makes the marginal portion is relatively than core height.Promptly, in first and second step formerly, owing to pay attention to preventing memory effect as described above, it is high that the ground capacity of upper electrode 34 is set ground, so plasma density relatively have at core uprise, in the tendency of peripheral part step-down, thus, the etch-rate that forms of through hole also relatively uprise easily at core, at the peripheral part step-down.As a result of, in the finish time of second step, the deviation of (particularly on the radial direction) relatively deepens at core on having living space aspect the degree of depth at the end of hole 116a, relatively shoals in the marginal portion.
Here, in last third step, on the contrary, by making plasma density relatively lower and relatively higher and make the etch-rate on the semiconductor wafer W relatively lower and relatively higher, can on certain degree, offset the deviation of etch depth so far in the marginal portion at core at peripheral part at core.Thus, can improve the inner evenness of the etch-rate of the disposed of in its entirety by first～third step.
As mentioned above, according to this execution mode, constitute the ground capacity of upper electrode 34 changeably, according to treatment conditions, for example in continuous processing, on upper electrode 34 in the additional deposition film, the ground capacity with upper electrode 34 in this processing switches to high capacitance ground connection (Low ESR) pattern easily in processing formerly, make on upper electrode 34, to be difficult to the additional deposition film, can prevent or lower influence or memory effect that subsequently processing is produced.In addition, in the processing of processing that is difficult to additional deposition film on upper electrode 34 or final operation, the ground capacity of upper electrode 34 is switched to low capacity earth (high impedance) pattern, the density that makes the plasma that generates in handling space PS is to the expansion of the radial direction outside, thus, can improve process uniformity.
The through hole etching of the organic system low-k film in the above-mentioned execution mode is an example, and the present invention goes for arbitrarily multistep and handles suddenly, certainly, is applicable to that also single stage handles.In addition, on upper electrode 34, electrically connect DC power supply (among the figure not expression), and apply on upper electrode 34 arbitrarily that the structure or the mode of direct voltage also are fine.Under these circumstances, upper electrode 34 is in the i.e. effect of direct current under the electric state that floats from earthing potential of current potential from chamber 10.
In addition, as other execution mode, also can the value of electrostatic capacitance be changed according to processing of wafers sheet number.In general, along with the temperature of the parts of chamber interior owing to plasma rises, the tendency that has the etch-rate of Waffer edge part to reduce.So, especially at the etching initial stage, the etch-rate of center wafer and the rising of Waffer edge etch-rate are partly increased synchronously, keep uniformity, if handling the sheet number increases, the etch-rate of Waffer edge part descends, and the electrostatic capacitance value of the variable portion of electrostatic capacitance is diminished, and the reduction of the etch-rate of Waffer edge part is descended.
The frequency of the high frequency of Shi Yonging is an example in the above-described embodiment, can use frequency arbitrarily according to processing.In addition, the structure of the various piece in the device also can have various distortion.Especially, the structure that the electrostatic capacitance in the above-mentioned execution mode is variable 86 is an example, can adopt electrostatic capacitance on every side that can make upper electrode 34 or any capacitor arrangement that ground capacity changes in desirable scope.Though above-mentioned execution mode relates to plasma-etching apparatus and plasma-etching method, but the present invention also goes for other plasma processing apparatus and processing method of plasma CVD, plasma oxidation, pecvd nitride, sputter etc.In addition, processed substrate in the present invention is not limited to semiconductor wafer, also can be various substrates or photomask, CD substrate and printed base plate etc. that flat-panel monitor is used.
Claims (7)
1. a plasma processing apparatus is characterized in that, comprising:
But container handling vacuum exhaust, ground connection;
First electrode in described container handling via insulant or space mounting;
The variable portion of electrostatic capacitance, the variable portion of this electrostatic capacitance electrically is connected between described first electrode and the earthing potential, be formed with the fluid storage chamber of ring-type in the ying-shaped insulator between the sidewall that is arranged at described first electrode and described container handling, via the outer liquid that towards described fluid storage chamber imports the liquid of dielectric constant with regulation or from described fluid storage chamber to the outside of described container handling derive dielectric constant with regulation of pipe arrangement, thereby make electrostatic capacitance variable from described container handling;
Second electrode of processed substrate is supported at the interval and the described first electrode configured in parallel that separate regulation in described container handling, and relative with described first electrode;
Processing space between the sidewall of described first electrode, described second electrode and described container handling provides the processing gas supply part of desirable processing gas;
In order to generate the plasma of described processing gas in described processing space, on described second electrode, apply the first high frequency power supply of first high frequency; And
Switch the electrostatic capacitance control part of the electrostatic capacitance of the variable portion of described electrostatic capacitance according to the processing sheet number of the treatment conditions of the plasma treatment of the described substrate that is implemented plasma treatment or described substrate.
2. plasma processing apparatus according to claim 1 is characterized in that:
Described electrostatic capacitance control part is transferred the value of the electrostatic capacitance of the variable portion of described electrostatic capacitance big in advance, along with the increase of handling the sheet number, reduces the value of described electrostatic capacitance.
3. plasma processing apparatus according to claim 1 is characterized in that:
Described electrostatic capacitance control part, when deposited film is additional to processing on described first electrode easily, the electrostatic capacitance of the variable portion of described electrostatic capacitance is switched to height, when deposited film is difficult to be additional on described first electrode, switch to the electrostatic capacitance of the variable portion of described electrostatic capacitance low.
4. plasma processing apparatus according to claim 1 is characterized in that:
Described electrostatic capacitance control part, in the rapid processing of multistep, in processing except each step of final step, the electrostatic capacitance of the variable portion of described electrostatic capacitance is switched to height, the electrostatic capacitance with the variable portion of described electrostatic capacitance in the time of the processing of step in the end switches to low.
5. plasma processing apparatus according to claim 1 is characterized in that:
The variable portion of described electrostatic capacitance has variable capacitor.
6. plasma processing apparatus according to claim 1 is characterized in that:
Apply second high frequency lower to described second electrode than the frequency of described first high frequency.
7. plasma processing apparatus according to claim 1 is characterized in that:
Has the DC power supply that applies desirable direct voltage to described first electrode.
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| JP5223377B2 (en) * | 2008-02-29 | 2013-06-26 | 東京エレクトロン株式会社 | Electrode for plasma processing apparatus, plasma processing apparatus and plasma processing method |
| JP5563860B2 (en) * | 2010-03-26 | 2014-07-30 | 東京エレクトロン株式会社 | Substrate processing method |
| JP6069768B2 (en) * | 2012-03-16 | 2017-02-01 | 株式会社クリエイティブテクノロジー | Electrostatic chuck device and control method thereof |
| KR101842124B1 (en) | 2016-05-27 | 2018-03-27 | 세메스 주식회사 | Support unit, Apparatus and method for treating a substrate |
| CN108206153B (en) * | 2016-12-16 | 2021-02-09 | 台湾积体电路制造股份有限公司 | Wafer bearing device and semiconductor equipment |
| US10553404B2 (en) * | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| JP2019075517A (en) * | 2017-10-19 | 2019-05-16 | 東京エレクトロン株式会社 | Processing device and member having diffusion path |
| CN112309807B (en) * | 2019-08-02 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| JP2021038452A (en) * | 2019-09-05 | 2021-03-11 | 東京エレクトロン株式会社 | Plasma treatment apparatus and control method |
| WO2021157750A1 (en) * | 2020-02-03 | 2021-08-12 | (주)제이디 | Capacitance-type state measuring device using sensor-mounted wafer |
| CN114256046A (en) * | 2020-09-22 | 2022-03-29 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and method of operating the same |
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