CN100521111C - Plasma etching method - Google Patents
Plasma etching method Download PDFInfo
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- CN100521111C CN100521111C CNB2007101281534A CN200710128153A CN100521111C CN 100521111 C CN100521111 C CN 100521111C CN B2007101281534 A CNB2007101281534 A CN B2007101281534A CN 200710128153 A CN200710128153 A CN 200710128153A CN 100521111 C CN100521111 C CN 100521111C
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000033228 biological regulation Effects 0.000 claims description 33
- 239000003595 mist Substances 0.000 claims description 11
- 230000009467 reduction Effects 0.000 claims description 10
- 239000011800 void material Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 88
- 239000004065 semiconductor Substances 0.000 description 33
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 239000013049 sediment Substances 0.000 description 15
- 230000006978 adaptation Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 210000000713 mesentery Anatomy 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- General Physics & Mathematics (AREA)
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- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
In a plasma etching method, a plasma of a processing gas containing CxFy (x, y are integers equal to or greater than 1), a rare gas and O2 by applying a high frequency power to the upper or the lower electrode while the processing gas is being supplied into the processing chamber. Further, an oxide film formed on the substrate is etched through a mask layer while applying a high frequency power for bias to the lower electrode. When a certain etching condition is likely to cause a low etching opening characteristic, a DC voltage is applied to the upper electrode, to thereby obtain a fine opening characteristic.
Description
Technical field
The present invention relates to be applicable to etching, for example high-aspect-ratio contact (HARC of oxide-film, High Aspect Ratio Contact) plasma-etching method of Chu Liing, and the storage medium of storing the control program of carrying out this plasma-etching method and can being read by computer.
Background technology
In production process of semiconductor device, on as the semiconductor wafer of processed substrate, form the photoresist pattern by photo-mask process, carry out etching with it as mask then.
Recently, semiconductor device is granular more and more, thereby in etching, also more and more require microfabrication, for example, in high-aspect-ratio contact (HARC) technology, the depth-to-width ratio of hole that forms on oxide-film (hole) and groove (trench) is increasing, therefore, in the etch process of oxide-film, require to select greatly ratio and fabulous opening.
According to such requirement, in patent documentation 1, have following technology by motion, use the parallel plate-type plasma-etching apparatus that is oppositely arranged upper electrode and lower electrode, mounting semiconductor wafer on lower electrode as etching gas, uses C
5F
8Or C
4F
6In the carbon fluorine is rare gas such as gas, oxygen and Ar, by the big residence time of flow regulation etching gas in chamber (chamber) of low pressure, etching gas, carries out plasma etching, selects ratio and opening thereby improve.
Yet, in patent documentation 1, not necessarily can access desired opening sometimes according to etching condition.For example, in the lower situation of the temperature (lower electrode temperature) of semiconductor wafer (for example, 0 ℃ situation) under, opening is good and high with respect to the selection ratio of mask, but, along with chip temperature rises, the opening variation, when set point of temperature is above, produce the etch-stop that is etched in Halfway Stopping.And according to pattern form, opening is also different, can etch into the bottom fully for hole, and for wire, for example groove, etch-stop take place then.
Though can consider to increase diluent gas or O
2The reply method of gas during as situation that etch-stop takes place still, all be the direction of selecting than decline, and be not preferred.
Patent documentation: TOHKEMY 2002-25979 communique
Summary of the invention
The present invention proposes in view of the above problems, and purpose is to provide a kind of plasma-etching method, even this method is under the situation of etching openings reduction at the etching condition of regulation, also can obtain good opening and selectivity simultaneously.
And the present invention also provides a kind of storage medium of embodied on computer readable, and it is storing the program of carrying out such plasma-etching method.
In order to solve above-mentioned problem, the invention provides a kind of plasma-etching method, it is characterized in that: use following plasma-etching apparatus, above-mentioned plasma-etching apparatus, in inside can the container handling of vacuum exhaust, be provided as the lower electrode and the upper electrode that forms in the mode relative of substrate-placing platform with lower electrode, apply the High frequency power that plasma generates the relative high frequency rate of usefulness to above-mentioned upper electrode or lower electrode, apply low-frequency relatively High frequency power of biasing usefulness to above-mentioned lower electrode, with the processing gaseous plasmaization that supplies in the above-mentioned container handling, carry out plasma etching, as above-mentioned processing gas, use to comprise C
xF
y(x, y are the integer more than 1), rare gas and O
2Gas, in above-mentioned container handling, supply with this and handle gas, simultaneously apply High frequency power to above-mentioned upper electrode or above-mentioned lower electrode, produce the plasma of above-mentioned processing gas, and apply the High frequency power of biasing usefulness to above-mentioned lower electrode, simultaneously the oxide-film that is formed on the substrate is carried out plasma etching via mask layer, etching condition in regulation is under the situation of condition of etching openings reduction, apply the direct voltage of regulation to above-mentioned upper electrode, to obtain good etching openings.
The present invention also provides a kind of plasma-etching method, it is characterized in that: use following plasma-etching apparatus, above-mentioned plasma-etching apparatus, in inside can the container handling of vacuum exhaust, be provided with lower electrode and the upper electrode that forms in the mode relative with lower electrode as substrate-placing platform, applying dual-purpose to above-mentioned lower electrode is that plasma generates the High frequency power of using and setovering usefulness, with the processing gaseous plasmaization that supplies in the above-mentioned container handling, carry out plasma etching, as above-mentioned processing gas, use to comprise C
xF
y(x, y are the integer more than 1), rare gas and O
2Gas, in above-mentioned container handling, supply with this and handle gas, applying dual-purpose to above-mentioned lower electrode simultaneously is that plasma generates the High frequency power of using and setovering usefulness, simultaneously the oxide-film that is formed on the substrate is carried out plasma etching via mask layer, etching condition in regulation is under the situation of condition of etching openings reduction, apply the direct voltage of regulation to above-mentioned upper electrode, to obtain good etching openings.
In above-mentioned any formation, as the etching condition of afore mentioned rules, can be the temperature of substrate, as the temperature of this opening reduction, can for the temperature of aforesaid substrate more than 20 ℃, even more than 40 ℃.
In addition,, the shape of etched pattern can be,, the pattern of wire shape can be comprised for above-mentioned etched pattern as the pattern form of this opening reduction as the etching condition of afore mentioned rules.And,, also comprise under the situation of void shape except comprising this wire shape at above-mentioned etched pattern, preferred all in accordance with regulations the degree of depth more than the value carry out etching.
In addition, preferred above-mentioned C
xF
yX be more than 4, y is more than 6, specifically, for example, above-mentioned C
xF
yBe from C
4F
6, C
5F
8And C
4F
8In a kind of gas of selecting, or two or more mist.And above-mentioned rare gas can be the mist of Ar or Xe or Ar and Xe.
The present invention also provides a kind of storage medium of embodied on computer readable, it is characterized in that: storage control plasma-etching apparatus is used, Yun Hang control program on computers, wherein, above-mentioned plasma-etching apparatus, in inside can the container handling of vacuum exhaust, be provided as the lower electrode and the upper electrode that forms in the mode relative of substrate-placing platform with lower electrode, apply the High frequency power that plasma generates the relative high frequency rate of usefulness to above-mentioned upper electrode or lower electrode, apply low-frequency relatively High frequency power of biasing usefulness to above-mentioned lower electrode, perhaps, applying dual-purpose to above-mentioned lower electrode is that plasma generates the High frequency power of using and setovering usefulness, with the processing gaseous plasmaization that supplies in the above-mentioned container handling, carry out plasma etching, above-mentioned control program, when operation, make the above-mentioned plasma-etching apparatus of computer control, to carry out above-mentioned engraving method.
According to the present invention, comprise C owing to use
xF
y(x, y are the integer more than 1), rare gas, O
2Gas as above-mentioned processing gas, in this container handling, supply with above-mentioned processing gas, simultaneously apply High frequency power to above-mentioned upper electrode or above-mentioned lower electrode, produce the plasma of above-mentioned processing gas, and apply the High frequency power of biasing usefulness to above-mentioned lower electrode, via the photoresist mask layer oxide-film that is formed on the substrate is carried out plasma etching then, so, can carry out the high plasma etching of selectivity, and, if the etching condition of regulation is the condition of etching openings reduction, then apply certain direct voltage to obtain good etching openings to above-mentioned upper electrode, therefore, do not produce etch-stop, and can obtain good opening and selectivity simultaneously.
Description of drawings
Fig. 1 is the overview schematic cross-section of an example of employed plasma-etching apparatus in enforcement of the present invention.
Fig. 2 is the organigram of the adaptation that is connected with first high frequency electric source in the plasma-etching apparatus of Fig. 1.
Fig. 3 is the schematic cross-section of the structure of employed semiconductor wafer W in the enforcement of an embodiment of the invention.
Fig. 4 is the key diagram of the etch-stop of generation when the temperature that makes semiconductor wafer rises.
Fig. 5 is under the temperature of generation etch-stop shown in Figure 4, applies direct voltage to upper electrode, the schematic cross-section of the state during the etching oxidation film.
Fig. 6 is the schematic diagram that is used to illustrate the mechanism of the opening when applying direct voltage and improve etching.
Fig. 7 is in the plasma processing apparatus of Fig. 1, the V when upper electrode applies direct voltage
DcAnd the schematic diagram of the variation of plasma layer thickness.
Fig. 8 is the etched opening of expression when making the semiconductor wafer variations in temperature and the schematic diagram of the experimental result of the etched opening when applying direct voltage.
Fig. 9 is used for illustrating the figure that selects than the definition of flat and facet.
Figure 10 is the schematic cross-section of the structure of employed semiconductor wafer W in the enforcement of other execution modes of the present invention.
Figure 11 is the different sectional view of the etched opening of explanation hole and groove.
Figure 12 applies direct voltage to upper electrode, the schematic cross-section of the hole during the etching oxidation film and the state of groove.
Figure 13 is used for explanation when not applying direct voltage on upper electrode and when applying direct voltage, relatively the schematic diagram of the experimental result of the etching openings of hole and groove.
Figure 14 is the overview schematic diagram of plasma-etching apparatus example that can be applied to the other types of embodiment of the present invention.
Figure 15 is the overview schematic diagram of plasma-etching apparatus example that can be applied to another other types of embodiment of the present invention.
[symbol description]
10: chamber (container handling)
16: pedestal (lower electrode)
34: upper electrode
44: feeder rod used therein
46,88: adaptation
48: the first high frequency electric sources
50: variable DC power supply
51: controller
52: the conducting cut-off switch
66: handle the gas supply source
84: exhaust apparatus
90: the second high frequency electric sources
The 91:GND piece
101,201:Si substrate
102,203: the etch-stop film
103,204: oxide-film
104,205: antireflection film (BARC)
105,206: photoresist film
107,207: hole
107a, 207a, 208a: shoulder (shoulder) portion
208: groove
W: semiconductor wafer (processed substrate)
Embodiment
Below, with reference to accompanying drawing, specifically describe embodiments of the present invention.
Fig. 1 is the summary schematic cross-section of an example of employed plasma-etching apparatus in enforcement of the present invention.
This plasma Etaching device constitutes as capacitive coupling type parallel flat plasma-etching apparatus, for example has by the surface roughly to be chamber cylindraceous (container handling) 10 through what the aluminium of anodized constituted.These chamber 10 protected ground connection.
In the bottom of chamber 10, dispose columned base support platform 14 via the insulation board 12 that constitutes by pottery etc., on base support platform 14, be provided with the pedestal 16 that forms by for example aluminium.Pedestal 16 constitutes lower electrode, and mounting is as the semiconductor wafer W of processed substrate thereon.
On pedestal 16, be provided with the electrostatic chuck 18 that keeps semiconductor wafer W with electrostatic force absorption.This electrostatic chuck 18 has the structure of the electrode 20 that is made of conducting film a pair of insulating barrier or insulating trip clamping, and DC power supply 22 is electrically connected on electrode 20.And the electrostatic force that is used to from the Coulomb force that direct voltage produced of DC power supply 22 etc. remains on semiconductor wafer W absorption on the electrostatic chuck 18.
Around electrostatic chuck 18 (semiconductor wafer W), on pedestal 16, dispose the focusing ring (conditioning ring) 24 that is used to improve conductivity etch uniformity, that for example constitute by silicon.On the side of pedestal 16 and base support platform 14, for example be provided with inwall parts 26 cylindraceous by quartz constituted.
In the inside of base support platform 14, for example be provided with cryogen chamber 28 along circumference.By being arranged at outside, not shown cooling unit, via pipeline 30a, 30b, in this cryogen chamber, refrigerant, for example cooling water of set point of temperature supplied with in circulation, can be controlled the treatment temperature of semiconductor wafer W by the temperature of refrigerant.
And then, will be from heat-conducting gas, for example helium (He) of not shown heat-conducting gas supply mechanism, supply to via gas supply line 32 between the back side of top and semiconductor wafer W of electrostatic chuck 18.
Above as the pedestal 16 of lower electrode, be provided with the upper electrode 34 relative, parallel with pedestal 16.Like this, the space between top and the lower electrode 34,16 just becomes the plasma span.Upper electrode 34 forms and, and the plasma span face that join, i.e. opposite face relative as the semiconductor wafer W on the pedestal 16 of lower electrode.
This upper electrode 34 is via insulating properties curtain-shaped cover member 42, be supported in the top of chamber 10, comprise constituting with the opposite face of pedestal 16 and having the battery lead plate 36 in a plurality of holes 37 that spue, and detachablely freely support this battery lead plate 36, by conductive material, the electrode support 38 of the water-cooling structure that aluminium constituted of surface after anodized for example.Battery lead plate 36 low resistance conductor or semiconductor that preferably Joule heat is few, and, as hereinafter described,, preferably contain the material of silicon from strengthening the viewpoint of resist layer.From this viewpoint, preferred electrode plate 36 is made of silicon or SiC.In the inside of electrode support 38, be provided with gas diffusion chamber 40, be extended with downwards and the gas a plurality of gas stream through holes 41 that hole 37 is connected that spue from this gas diffusion chamber 40.
Be formed with the gas introduction port 62 that imports processing gas to gas diffusion chamber 40 on electrode support 38, be connected with gas supply pipe 64 on this gas introduction port 62, gas supply pipe 64 is connected with processing gas supply source 66.On gas supply pipe 64, begin to be disposed with mass flow controller (MFC) 68 and switch valve 70 (also can replace MFC) by FCN from upstream side.So, from handling gas supply source 66, will be used for etched processing gas, supply to gas diffusion chamber 40 from gas supply pipe 64, via gas stream through hole 41 and the gas hole 37 plasma span that spues that spues with being spray form.In other words, upper electrode 34 has the function of the shower nozzle of using as supply processing gas.
On upper electrode 34 via adaptation 46 and feeder rod used therein 44 and be electrically connected first high frequency electric source 48.High frequency more than first high frequency electric source, the 48 output 10MHz, the High frequency power of for example 60MHz.Adaptation 46 is devices of the inside that makes the load impedance and first high frequency electric source 48 (or output) impedance phase coupling, the output impedance that makes first high frequency electric source 48 when having chamber 10 in generation plasma and load impedance consistent function apparent.The lead-out terminal of adaptation 46 is connected with the upper end of feeder rod used therein 44.
On the other hand, on above-mentioned upper electrode 34, except first high frequency electric source 48, also be electrically connected variable DC power supply 50.Variable DC power supply 50 also can be a bipolar power supply.Specifically be exactly, this variable DC power supply 50 is connected on the upper electrode 34 via above-mentioned adaptation 46 and feeder rod used therein 44, conducting, the disconnection that can be powered by conducting cut-off switch 52.Conducting, the disconnection of the polarity of variable DC power supply 50, electric current, voltage and conducting/cut-off switch 52 are controlled by controller 51.
As shown in Figure 2, adaptation 46 has from first variable capacitor 54 of the supply lines 49 branches setting of first high frequency electric source 48 and second variable capacitor 56 that is arranged on the breakout downstream of supply lines 49, can bring into play above-mentioned functions thus.And, in adaptation 46, be provided with and catch (trap), make it possible to effectively dc voltage and current (hereinafter to be referred as direct voltage) be supplied to upper electrode 34 from the high frequency (for example 60MHz) of first high frequency electric source 48 and from the filter 58 of the high frequency (for example 2MHz) of aftermentioned second high frequency electric source.In other words, the direct current from variable DC power supply 50 is connected in supply lines 49 via filter 58.This filter 58 is made of coil 59 and capacitor 60, catches thus from the high frequency of first high frequency electric source 48 and from the high frequency of aftermentioned second high frequency electric source.
Be provided with cylindric earthing conductor 10a, it is extended to position that the height and position than upper electrode 34 also relies on the top from sidewall of chamber, the top wall portion of this cylindric earthing conductor 10a by the insulating element 44a of tubular with top feeder rod used therein 44 electric insulations.
On pedestal 16, be electrically connected second high frequency electric source 90 via adaptation 88 as lower electrode.To pedestal 16 supply high frequency electric power, thus ion is introduced semiconductor wafer W one side from this second high frequency electric source 90 as lower electrode.Frequency in second high frequency electric source, 90 output 300kHz～13.56MHz scopes, the High frequency power of for example 2MHz.Adaptation 88 makes inside (or output) the impedance phase coupling of the load impedance and second high frequency electric source 90, when having chamber 10 in the generation plasma, and the internal driving that makes second high frequency electric source 90 and load impedance consistent function apparent.
On upper electrode 34, be electrically connected low pass filter (LPF) 92, this low pass filter is used under the situation that the high frequency (for example 60MHz) that makes from first high frequency electric source 48 does not pass through, will be from high frequency (for example 2MHz) ground connection of second high frequency electric source 90.This low pass filter (LPF) 92 preferably is made of LR filter or LC filter, even but owing to be that a lead also can give fully big reactance for the high frequency (for example 60MHz) from first high frequency electric source 48, so get final product like this.On the other hand, on pedestal 16, be electrically connected the high pass filter (HPF) 94 that is useful on from high frequency (for example 60MHz) ground connection of first high frequency electric source 48 as lower electrode.
Be provided with exhaust outlet 80 in the bottom of chamber 10, on this exhaust outlet 80, be connected with exhaust apparatus 84 via blast pipe 82.Exhaust apparatus 84 has turbomolecular pump equal vacuum pump, can will be decompressed to desirable vacuum degree in the chamber 10.And the sidewall of chamber 10 is provided with moving into of semiconductor wafer W and takes out of mouthfuls 85, and this is moved into and takes out of mouthfuls 85 and can be opened by sluice valve 86 or closed.And, can be provided with the accumulation precipitation protection body 11 that is used to prevent from chamber 10, to adhere to etch byproducts (accumulation sediment) along the inwall of chamber 10 with freely installing and removing.In other words, pile up precipitation protection body 11 and constitute chamber wall.And, also be provided with in the periphery of inwall parts 26 and pile up precipitation protection body 11.Pile up in the chamber wall side of chamber 10 bottoms between the accumulation precipitation protection body 11 of precipitation protection body 11 and inwall parts 26 sides, be provided with exhaustion plate 83.As piling up precipitation protection body 11 and exhaustion plate 83, preferably use and on aluminium, be coated with Y
2O
3Material on pottery.
In the part of the formation chamber inner wall of piling up precipitation protection body 11 and wafer W substantially on the part of equal height, be provided with the electroconductive component (GND piece) 91 that ground connection, DC connect, can bring into play the effect that prevents paradoxical discharge thus.
Each formation portion of plasma processing apparatus is connected with control part (whole control device) 95 and controlled by it.And, on control part 95, be connected with user interface 96, the keyboard of input operation of the person carries out for managing plasma processing unit order that user interface 96 comprises the process management etc., and working condition that can article on plasma body processing unit is carried out display of visualization display etc.
Moreover, also be connected with storage part 97 on the control part 95, store in the storage part 97 and be used under the control of control part 95 and be implemented in the control program of the performed various processing of plasma processing apparatus, and be used for according to treatment conditions and carry out the program handled, be scheme in each formation portion of plasma processing apparatus.This scheme also can be stored in hard disk or the semiconductor memory, also can be set on the assigned position of storage part 97 under the state in the storage medium that is stored in mobilitys such as CDROM, DVD, embodied on computer readable.
And, can also be as required, according to from storage part 97, accessing scheme arbitrarily, carry out by control part 95 from the indication of user interface 96 etc., thus, under the control of control part 95, carry out the desirable processing in plasma processing apparatus.
Then, to being illustrated by the plasma-etching apparatus of this spline structure plasma-etching method that implement, that an embodiment of the invention relate to.
Here, for semiconductor wafer W as handled object, as shown in Figure 3, on Si substrate 101, forming successively after etch-stop film 102, the oxide-film 103 as etch target, antireflection film (BARC) 104 and the photoresist film 105, form predetermined pattern by photoetching on photoresist film 105, is mask with photoresist 105 then, use the plasma-etching apparatus of Fig. 1 that the oxide-film 103 as etch target is carried out etching, form hole.
For oxide-film 103, for example can use with the film of tetraethoxysilane (TEOS), or use glass-film (BPSG or PSG) etc. as the raw material film forming as the etch target film in the present embodiment.The thickness of this oxide-film 103 is suitably set, and for example is about 0.5～4.0 μ m.
Etch-stop film 102 is made of SiN or SiC, and its thickness is about 20～100nm.As antireflection film 104 (BARC), can use SiON film or organic mesentery, its thickness is about 20～100nm.Photoresist film 105 is typically the ArF resist, and its thickness is about 100～400nm.
When carrying out etch processes, at first, gate valve 86 is opened, to take out of mouthfuls 85 and in chamber 10, move into semiconductor wafer W via moving into above-mentioned structure, mounting is on pedestal 16.Then, supply with the processing gas that is used to carry out etch processes with the regulation flow to gas diffusion chamber 40 from handling gas supply source 66, spuing hole 37 via gas stream through hole 41 and gas in chamber 10 in the supply gas, utilize exhaust apparatus 84 from chamber 10 interior exhausts, make pressure wherein be for example 2.67～6.67Pa (set point in 20～50mTorr) scopes.
Here, use contains C
xF
y(x, y are the integer more than 1), rare gas, O
2Gas as being used for the processing gas of etching oxidation film 103.C
xF
yExcept having function, also have and supply with the function of piling up sediment, improving the selection ratio as etchant (etchant).As C
xF
y, preferred x is 4 or more, y is more than 6, can be suitable for use from C
4F
6, C
5F
8And C
4F
8The middle a kind of gas selected or two or more mists.Preferred especially C wherein
4F
6As C
xF
yConcrete flow, be preferably 10～50mL/min (be converted into standard state after flow (sccm)).
O
2Gas is used to remove superfluous accumulation sediment, guarantees the penetrability (opening) of etching hole, preferably adds in flow-rate ratio and handles 1～20% of gas integral body.Preferred concrete flow is 10～60mL/min (sccm).
Rare gas is as C
xF
yVector gas or diluent gas and working, be in order to keep handling the balance of gas, and control piles up the gas of sediment or fluorine element (F), preferably add and handle 60～98% of gas integral body in flow-rate ratio.Preferred concrete flow is 350～1200mL/min (sccm).As rare gas, can be suitable for using the mist of Ar or Xe or Ar and Xe.Also can use Kr as rare gas.
As handling gas, can also contain and remove above-mentioned C
xF
y, rare gas, O
2Outside other gases.For example, in these, can add the hydrogen fluorocarbon gas, i.e. CH
xF
y(x, y are the positive integer more than 1).Like this, if substrate is a nitride film, then also can carry out etching to nitride film together.
Like this, under the state that in chamber 10, imports after carrying out processing gas that etching uses, apply High frequency power that plasma generate usefulness with regulation power to upper electrode 34 from first high frequency electric source 48, and, apply High frequency power that ion introduce usefulness with regulation power to pedestal 16 from second high frequency electric source 90 as lower electrode, moreover, apply direct voltage from the DC power supply 22 of electrostatic chuck 18 usefulness to the electrode 20 of electrostatic chuck 18, semiconductor wafer W is fixed on the pedestal 16.
Gas from the battery lead plate 36 that is formed on upper electrode 34 the processing gas that hole 37 spues that spues, between upper electrode 34 and pedestal 16 as lower electrode, in the glow discharge ionic medium bodyization that produces by High frequency power, free radical or ion that utilization is generated by this plasma, with photoresist film 105 is mask, oxide-film 103 is carried out etching, form hole.
Because to the High frequency power in upper electrode 34 supply high frequency zones (for example more than the 10MHz), thus can under preferred state, make the plasma densification, even under the condition of low pressure more, also can form highdensity plasma.
Therefore, like this only applying High frequency power, using under the situation of above-mentioned processing gas etch oxide-film, according to the temperature of semiconductor wafer W, the opening of hole (connectivity) is also different.Temperature in semiconductor wafer W is lower, for example under 0 ℃ the situation, then, promptly allow to etch into prescribed depth, if the temperature of semiconductor wafer W raises, the opening of hole also can variation, as shown in Figure 4, the etching of hole 107 may produce so-called etch-stop in the Halfway Stopping of etch target film sometimes.This be because, sedimentary attachment coefficient changes, sediment enters in the hole.The state that this opening is lower though also be derived from other condition, generally 20 ℃ of generations, becomes obvious at 40 ℃.That is, when the temperature (lower electrode temperature) of semiconductor wafer W more than 20 ℃, especially more than 40 ℃ the time, produce the low states of opening such as etch-stop.
In contrast, in the present embodiment, because when producing plasma, apply the direct voltage of specified polarity and size to upper electrode 34 from variable DC power supply 50, so opening improves, as shown in Figure 5, thus can not produce etch-stop and the oxide-film 103 that connects as the etch target film generates holes 107.The absolute value of direct voltage at this moment is preferably 800～1500V.
Like this, by applying direct voltage to upper electrode 34, it is good that the opening of hole 107 becomes, this be because, if apply direct voltage, then as shown in Figure 6, be deposited in that sediment 109 on the shoulder 107a of hole 107 is fixed, hardening, difficulty be stripped to upper electrode 34, therefore, sediment is difficult in the hole 107 and generates.That is, because sediment held back by shoulder 107a, can prevent that it from entering in the hole 107, so opening (connectivity) improves, etch-stop is eliminated.And, entering deposit in the hole by minimizing like this, etch-rate also gets a promotion.
In addition, by former etch processes, particularly apply the etch processes of less High frequency power to upper electrode 34, polymer is attached on the upper electrode 34.So,, then as shown in Figure 7, can deepen self bias voltage V of upper electrode if when carrying out etch processes, apply suitable direct voltage to upper electrode 34
Dc, promptly can increase V on upper electrode 34 surfaces
DcAbsolute value.Therefore, the direct voltage that passes through to be applied attached to the polymer on the upper electrode 34 is supplied to semiconductor wafer W by sputter, as sediment attached to above the photoresist film 105.Owing to the sediment that generates so also is fixed on shoulder 107a, thus photoresist film 106 become be difficult to etched, with respect to the selection of photoresist film 105 than also being improved.
Below, reality is confirmed the experimental result of the effect that method produced of present embodiment describes.
Here, on the Si substrate, form as etch target be oxide-film, thickness is the thermal oxidation SiO of 2000nm
2Film then forms the antireflection film (BARC) that is made of organic mesentery in the above, and thickness is 60nm, then, forms the KrF resist film in the above, and thickness is 600nm, thereby obtains sample (sample).
This sample is moved in the device of Fig. 1, made that the pressure in the chamber is 3.3Pa, the top high frequency power is 3000W, and the bottom high frequency power is 3600W, and the lower electrode temperature is 0 ℃.As handling gas, make C
4F
6Be 38mL/min (sccm) that Ar is 800mL/min (sccm), O
2Be 50mL/min (sccm).Under the situation that does not apply direct voltage, carry out 180 seconds etching.The bottom V of this moment
PpBe 2553V.As a result, shown in Fig. 8 (a), can be the hole of 0.35 μ m with good opening formation opening diameter.At this moment etch-rate is 566nm/min, and for the etching selectivity of photoresist film, flat is 11.3, and facet is 5.8.In addition, flat is c/a in Fig. 9, and facet is c/b in Fig. 9.
Then, with lower electrode temperature increase to 40 ℃, carry out etching with similarity condition.As a result, shown in Fig. 8 (b), in the etching way, produce etch-stop.
Then, the lower electrode temperature still is 40 ℃, and the top high frequency power is reduced to 1500W, and applies-direct voltage of 1000V to upper electrode 34, keeps other conditions constant, carries out etching.In addition, the reason that reduces the top high frequency power is, makes the V of the bottom when direct voltage applies
PpBe in harmonious proportion mutually with the situation that does not apply direct voltage.As a result, shown in Fig. 8 (c), etch-stop is eliminated, and obtains good opening.At this moment etch-rate is 585nm/min, and for the etching selectivity of photoresist film 105, flat is 21.9, and facet is 6.4, therefore, can confirm, by applying direct voltage, can improve etch-rate and select ratio.
More than, though showed by apply direct voltage to upper electrode and eliminated the different example of the opening that temperature causes,, can eliminate the difference of the opening that pattern form causes equally.Below this execution mode is elaborated.
In this embodiment, as shown in figure 10, with regard to semiconductor wafer W as handled object, on Si substrate 201, form successively after wiring layer 202, etch-stop film 203, oxide-film 204, antireflection film (BARC) 205 and the photoresist film 206 as etch target, on photoresist film 206, form the pattern of regulation by photoetching, with photoresist film 206 is mask, use the plasma-etching apparatus of Fig. 1, oxide-film 204 as etch target is carried out etching, form hole and groove (wire).
As etch-stop film 203, the oxide-film 204 that becomes etch target, antireflection film (BARC) 205 and photoresist film 206, can use the material identical with former execution mode.In addition, as wiring layer 202, can use common employed materials such as W, Al, Cu.
Carrying out this etched the time, same with former execution mode, in chamber 10, move into semiconductor wafer W with above-mentioned structure, mounting is on pedestal 16.Then, same with former execution mode, use and contain C
xF
y(x, y are the integer more than 1), rare gas and O
2Processing gas, carry out processing gas that etch processes use with the regulation flow to gas diffusion chamber's 40 supplies from handling gas supply source 66, spuing hole 37 via gas stream through hole 41 and gas in chamber 10 in the supply gas, utilize exhaust apparatus 84 to carry out exhaust, make pressure wherein be for example 2.67～6.67Pa (set point in 20～50mTorr) scopes in the chamber 10.
So, under the state that in chamber 10, imports after carrying out processing gas that etching uses, apply the High frequency power that is used for the plasma generation from first high frequency electric source 48 to upper electrode 34 with regulation power, and, apply the High frequency power that is used for the ion introducing from second high frequency electric source 90 to pedestal 16 with regulation power as lower electrode, and, apply direct voltage from the DC power supply 22 of electrostatic chuck 18 usefulness to the electrode 20 of electrostatic chuck 18, semiconductor wafer W is fixed on the pedestal 16.
Gas from the battery lead plate 36 that is formed on upper electrode 34 the processing gas that hole 37 spues that spues, between upper electrode 34 and pedestal 16 as lower electrode, in the glow discharge ionic medium bodyization that produces by High frequency power, free radical or ion that utilization is generated by this plasma, with photoresist film 206 is mask, oxide-film 204 is carried out etching, form hole and groove.
Therefore, only applying High frequency power like this, using under the situation of above-mentioned processing gas etch oxide-film, the opening of hole and groove is different.That is, according to the shape of pattern, opening is different, and as shown in figure 11, hole 207 openings are etched well, and relatively poor as the opening of the groove 208 of linear pattern, produces etch-stop sometimes.This be because, being difficult to enter the narrow pattern of opening as sedimentary polymer is in the hole, opening be difficult for to worsen, and is groove for the broad pattern of opening, polymer then enters easily, it is many that sediment becomes, opening also worsens easily.
In contrast, identical with former execution mode, in the present embodiment, because when producing plasma, apply the direct voltage of specified polarity and size to upper electrode 34 from variable DC power supply 50, so, the sediment 209 that is deposited on shoulder 207a, the 208a of hole 207 or groove 208 is fixed, hardening, be difficult to be stripped from, therefore, even as mentioned above, in the groove that sediment generates easily, also can reduce sediment, opening improves, as shown in figure 12, groove 208 is also same with hole 207, can be etched to etch-stop film 203.In this case since in the hole 207 and the sediments in the groove 208 reduce, etch-rate rises.In addition, as mentioned above, by applying direct voltage to upper electrode 34, the polymer of supplying with from upper electrode 34 also is fixed on shoulder 207a, the 208a, so photoresist film 206 is very difficult etched, for the selection ratio rising of photoresist film 206.In the present embodiment, the absolute value that preferably is applied to the direct voltage of upper electrode 34 is 800～1500V.
Below, reality is confirmed the experimental result of the effect that method produced of present embodiment describes.
Here, on the Si substrate, form SiN film as the etch-stop film, thickness is 50nm, then form the bpsg film as the oxide-film of etch target thereon, thickness is 1000nm, and the TEOS film, thickness is 28000nm, then form the KrF resist film in the above, thickness is 900nm, thereby obtains sample.
This sample is moved into the device of Fig. 1, make that cavity indoor pressure is 33.5Pa (25mTorr), the top high frequency power is 3000W, and the bottom high frequency power is 3600W, and the lower electrode temperature is 0 ℃.As handling gas, make C
4F
6Be 38mL/min (sccm) that Ar is 800mL/min (sccm), O
2For 46mL/min (sccm), under the situation that does not apply direct voltage, carry out 240 seconds etching.As a result, shown in Figure 13 (a), the hole opening forms well, and the opening of groove is relatively poor, and particularly in center wafer, the opening of groove is poor, and its degree of depth is only pertusate about half.At this moment with respect to the selection ratio of photoresist film, at the center of wafer, Flat is 15.8, and facet is 5.5; At the edge, Flat is 16.7, and facet is 6.3.
Then, in order to make the V of the bottom when applying direct voltage
PpBe in harmonious proportion mutually with the situation that does not apply direct voltage, the top high frequency power is reduced to 1500W, and apply the direct voltage of a 1000V, and keep other conditions constant, carry out etching to upper electrode 34.As a result, shown in Figure 13 (b), the opening of groove is good, even is etched to the position also darker than hole.At this moment, for the selection ratio of photoresist film, in center wafer, owing to sedimentary reason, thickness increases, and Flat can't measure, and facet is 7.7; At the edge, still owing to sedimentary reason, Flat can't measure, and facet is 6.4.Confirm thus,, can promote and select ratio by applying direct voltage.
In addition, the present invention is not limited to above-mentioned execution mode, and various variation can be arranged.For example, in the above-described embodiment,, be not limited to this, also can use hard mask layer simultaneously though represented to use the example of photoresist film as mask.And,, be raw material and example and BPSG, the PSG of film forming also are not limited thereto though demonstrated with TEOS as oxide-film.And the structure of above-mentioned semiconductor wafer also is not limited to above-mentioned execution mode.
And, about using device of the present invention, also be not limited to device shown in Figure 1, can use the device of the following stated.For example, can use upper electrode is divided into center and peripheral two parts, and can regulate the device that high frequency applies power respectively.In addition, as shown in figure 14, can use the bottom double frequency to apply the plasma-etching apparatus of type, this plasma Etaching device applies the High frequency power of for example 40MHz that is used for the plasma generation from first high frequency electric source 48 ' to the pedestal 16 as lower electrode, and applies the High frequency power of for example 2MHz that is used for the ion introducing from second high frequency electric source 90 '.As shown in the figure,, apply the direct voltage of regulation, can access the effect identical with above-mentioned execution mode by variable DC power supply 166 is connected in upper electrode 234.
And, as shown in figure 15, can also use following plasma-etching apparatus, connect high frequency electric source 170 and replace among Figure 14 first high frequency electric source 48 ' and second high frequency electric source 90 ' that link to each other with pedestal 16 as lower electrode, from this high frequency electric source 170 apply be also used as plasma generate with and the High frequency power of for example 40MHz of biasing formation usefulness.The situation of this situation and Figure 14 is identical, by variable DC power supply 166 is connected in upper electrode 234, applies the direct voltage of regulation, can access the effect identical with above-mentioned execution mode.
Claims (20)
1. plasma-etching method is characterized in that:
Use following plasma-etching apparatus; Described plasma-etching apparatus; In inside can the container handling of vacuum exhaust; Be provided as the lower electrode and the upper electrode that forms in the mode relative with lower electrode of substrate-placing platform; Apply the RF power that plasma generates the relative high frequency rate of usefulness to described upper electrode or lower electrode; Apply relatively low-frequency RF power of biasing usefulness to described lower electrode; With the processing gaseous plasma that supplies in the described container handling; Carry out plasma etching
As described processing gas, use to comprise rare gas, O
2And C
xF
yGas, wherein x, y are the integer more than 1, in described container handling, supply with this and handle gas, simultaneously apply High frequency power to described upper electrode or described lower electrode, produce the plasma of described processing gas, and apply the High frequency power of biasing usefulness to described lower electrode, simultaneously the oxide-film that is formed on the substrate is carried out plasma etching via mask layer
Etching condition in regulation is under the situation of condition of etching openings reduction, apply the direct voltage of regulation to described upper electrode, to obtain good etching openings, the etching condition of described regulation is the temperature of substrate, and the temperature of described substrate is more than 20 ℃, and the absolute value of the direct voltage of described regulation is 800-1500V.
2. plasma-etching method as claimed in claim 1 is characterized in that:
The temperature of described substrate is more than 40 ℃.
3. plasma-etching method as claimed in claim 1 or 2 is characterized in that:
Described C
xF
y, x is more than 4, y is more than 6.
4. plasma-etching method as claimed in claim 3 is characterized in that:
Described C
xF
yBe from C
4F
6, C
5F
8And C
4F
8In a kind of gas of selecting, or two or more mist.
5. plasma-etching method as claimed in claim 1 is characterized in that:
Described rare gas is the mist of Ar or Xe or Ar and Xe.
6. plasma-etching method is characterized in that:
Use following plasma-etching apparatus; Described plasma-etching apparatus; In inside can the container handling of vacuum exhaust; Be provided as the lower electrode and the upper electrode that forms in the mode relative with lower electrode of substrate-placing platform; Apply the RF power that plasma generates the relative high frequency rate of usefulness to described upper electrode or lower electrode; Apply relatively low-frequency RF power of biasing usefulness to described lower electrode; With the processing gaseous plasma that supplies in the described container handling; Carry out plasma etching
As described processing gas, use to comprise rare gas, O
2And C
xF
yGas, wherein x, y are the integer more than 1, in described container handling, supply with this and handle gas, simultaneously apply High frequency power to described upper electrode or described lower electrode, produce the plasma of described processing gas, and apply the High frequency power of biasing usefulness to described lower electrode, simultaneously the oxide-film that is formed on the substrate is carried out plasma etching via mask layer
Etching condition in regulation is under the situation of condition of etching openings reduction, apply the direct voltage of regulation to described upper electrode, to obtain good etching openings, the etching condition of described regulation is the shape of etched pattern, and described etched pattern comprises the wire shape, and the absolute value of the direct voltage of described regulation is 800-1500V.
7. plasma-etching method as claimed in claim 6 is characterized in that:
Described etched pattern comprises wire shape and void shape, and all the above degree of depth of value is carried out etching according to the rules.
8. as claim 6 or 7 described plasma-etching methods, it is characterized in that:
Described C
xF
y, x is more than 4, y is more than 6.
9. plasma-etching method as claimed in claim 8 is characterized in that:
Described C
xF
yBe from C
4F
6, C
5F
8And C
4F
8In a kind of gas of selecting, or two or more mist.
10. plasma-etching method as claimed in claim 6 is characterized in that:
Described rare gas is the mist of Ar or Xe or Ar and Xe.
11. a plasma-etching method is characterized in that:
Use following plasma-etching apparatus, described plasma-etching apparatus, in inside can the container handling of vacuum exhaust, be provided with lower electrode and the upper electrode that forms in the mode relative with lower electrode as substrate-placing platform, applying dual-purpose to described lower electrode is that plasma generates the High frequency power of using and setovering usefulness, with the processing gaseous plasmaization that supplies in the described container handling, carry out plasma etching
As described processing gas, use to comprise rare gas, O
2And C
xF
yGas, wherein x, y are the integer more than 1, this processing gas of supply in described container handling, and applying dual-purpose to described lower electrode simultaneously is that plasma generates the High frequency power of using and setovering usefulness, simultaneously the oxide-film that is formed on the substrate is carried out plasma etching via mask layer
Etching condition in regulation is under the situation of condition of etching openings reduction, apply the direct voltage of regulation to described upper electrode, to obtain good etching openings, the etching condition of described regulation is the temperature of substrate, and the temperature of described substrate is more than 20 ℃, and the absolute value of the direct voltage of described regulation is 800-1500V.
12. plasma-etching method as claimed in claim 11 is characterized in that:
The temperature of described substrate is more than 40 ℃.
13., it is characterized in that as claim 11 or 12 described plasma-etching methods:
Described C
xF
y, x is more than 4, y is more than 6.
14. plasma-etching method as claimed in claim 13 is characterized in that:
Described C
xF
yBe from C
4F
6, C
5F
8And C
4F
8In a kind of gas of selecting, or two or more mist.
15. plasma-etching method as claimed in claim 11 is characterized in that:
Described rare gas is the mist of Ar or Xe or Ar and Xe.
16. a plasma-etching method is characterized in that:
Use following plasma-etching apparatus, described plasma-etching apparatus, in inside can the container handling of vacuum exhaust, be provided with lower electrode and the upper electrode that forms in the mode relative with lower electrode as substrate-placing platform, applying dual-purpose to described lower electrode is that plasma generates the High frequency power of using and setovering usefulness, with the processing gaseous plasmaization that supplies in the described container handling, carry out plasma etching
As described processing gas, use to comprise rare gas, O
2And C
xF
yGas, wherein x, y are the integer more than 1, this processing gas of supply in described container handling, and applying dual-purpose to described lower electrode simultaneously is that plasma generates the High frequency power of using and setovering usefulness, simultaneously the oxide-film that is formed on the substrate is carried out plasma etching via mask layer
Etching condition in regulation is under the situation of condition of etching openings reduction, apply the direct voltage of regulation to described upper electrode, to obtain good etching openings, the etching condition of described regulation is the shape of etched pattern, and described etched pattern comprises the wire shape, and the absolute value of the direct voltage of described regulation is 800-1500V.
17. plasma-etching method as claimed in claim 16 is characterized in that:
Described etched pattern comprises wire shape and void shape, and all the above degree of depth of value is carried out etching according to the rules.
18., it is characterized in that as claim 16 or 17 described plasma-etching methods:
Described C
xF
y, x is more than 4, y is more than 6.
19. plasma-etching method as claimed in claim 18 is characterized in that:
Described C
xF
yBe from C
4F
6, C
5F
8And C
4F
8In a kind of gas of selecting, or two or more mist.
20. plasma-etching method as claimed in claim 16 is characterized in that:
Described rare gas is the mist of Ar or Xe or Ar and Xe.
Applications Claiming Priority (2)
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|---|---|---|---|
| JP2006191704 | 2006-07-12 | ||
| JP2006191704A JP5323306B2 (en) | 2006-07-12 | 2006-07-12 | Plasma etching method and computer-readable storage medium |
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| CN100521111C true CN100521111C (en) | 2009-07-29 |
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| KR (1) | KR20080006457A (en) |
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| CN101740298B (en) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | Plasma processing apparatus and constituent part thereof |
| CN101882577A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(上海)有限公司 | Roughing method of wafer backside |
| JP5568340B2 (en) | 2010-03-12 | 2014-08-06 | 東京エレクトロン株式会社 | Plasma etching method and plasma etching apparatus |
| JP6329839B2 (en) * | 2014-07-29 | 2018-05-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| JP6438831B2 (en) * | 2015-04-20 | 2018-12-19 | 東京エレクトロン株式会社 | Method for etching an organic film |
| CN108321101B (en) * | 2018-02-24 | 2020-09-11 | 惠科股份有限公司 | Electrode assembly and etching equipment |
| CN108682611B (en) * | 2018-05-17 | 2020-03-13 | 大连理工大学 | Electrode for improving uniformity of process plasma |
| CN108649005B (en) * | 2018-05-22 | 2020-10-30 | 山东汉旗科技有限公司 | Semiconductor wafer batch etching device |
| JP7134863B2 (en) * | 2018-12-27 | 2022-09-12 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| JP7190940B2 (en) * | 2019-03-01 | 2022-12-16 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| CN110600377A (en) * | 2019-09-27 | 2019-12-20 | 扬州扬杰电子科技股份有限公司 | Etching method for reducing surface chromatic aberration generated by wafer positive gold corrosion |
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| CN101106086A (en) | 2008-01-16 |
| JP5323306B2 (en) | 2013-10-23 |
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