CN112309807B - Plasma etching equipment - Google Patents
Plasma etching equipment Download PDFInfo
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- CN112309807B CN112309807B CN201910711497.0A CN201910711497A CN112309807B CN 112309807 B CN112309807 B CN 112309807B CN 201910711497 A CN201910711497 A CN 201910711497A CN 112309807 B CN112309807 B CN 112309807B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/023—Means for mechanically adjusting components not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
Abstract
A plasma etching apparatus comprising: the reaction chamber comprises a reaction chamber top, and a first opening is formed in the reaction chamber top; the lower electrode assembly is positioned at the bottom in the reaction cavity and comprises a bearing surface for bearing a substrate to be processed; the mounting substrate is positioned in the first opening, and a gap is formed between the mounting substrate and the side wall of the first opening; the fixing part is positioned outside the top of the reaction cavity and is provided with a second opening; the connecting part penetrates through the second opening, a gap is formed between the connecting part and the side wall of the second opening, the connecting part comprises a first end and a second end which are opposite, and the first end is connected with the mounting substrate; the driving device is connected with the second end and can drive the mounting substrate to move along the direction vertical to the bearing surface; and the first corrugated pipe surrounds the connecting part and is used for maintaining the reaction cavity as a closed space. The plasma etching equipment can meet different process requirements.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to plasma etching equipment.
Background
In a semiconductor process, a process of etching a semiconductor material generally includes a dry etching process or a wet etching process, wherein the dry etching process using plasma for etching can effectively control the size of an etching opening and is the most mainstream etching process at present. Existing processes typically utilize glow discharge, radio frequency signals, corona discharge, etc. to form the plasma. When the plasma is formed by utilizing the radio frequency signal, the density and the energy of the formed plasma can be controlled by regulating and controlling parameters such as the components of the processing gas, the frequency of the radio frequency power, the coupling mode of the radio frequency power, the air pressure, the temperature and the like, so that the plasma processing effect is optimized. Therefore, in the conventional semiconductor etching apparatus, a radio frequency signal is usually used to form a plasma, and a bias voltage is formed on a substrate to be processed by using the radio frequency signal, so that the plasma bombards the substrate to be processed, thereby performing an etching process on the substrate to be processed.
The existing etching device for forming plasma by adopting radio frequency signals mainly comprises an Inductively Coupled Plasma (ICP) etching device, a Capacitively Coupled Plasma (CCP) etching device, an Electron Cyclotron Resonance (ECR) etching device and the like, wherein the Inductively Coupled Plasma (ICP) etching device and the Capacitively Coupled Plasma (CCP) etching device are widely applied to the field of dry etching due to simple structures and low cost. The existing capacitive coupling plasma etching device generally comprises a radio frequency power source and a bias power source, the capacitive coupling plasma etching device is provided with an upper electrode and a lower electrode, the radio frequency power source is connected with the upper electrode or the lower electrode, the corresponding lower electrode or the upper electrode is grounded, and a radio frequency signal generated by the radio frequency power source turns a reaction gas into plasma through a capacitor formed by the upper electrode and the lower electrode. The bias power source is connected with the lower electrode, and forms bias voltage on the substrate to be processed on the lower electrode.
However, the distance between the upper electrode and the lower electrode of the existing capacitive coupling plasma etching device is fixed, so that the capacitive coupling plasma etching device is difficult to meet different process requirements.
Disclosure of Invention
The invention provides a plasma etching device to meet different process requirements.
In order to solve the above technical problem, the present invention provides a plasma etching apparatus, comprising: the reaction chamber comprises a reaction chamber top, and a first opening is formed in the reaction chamber top; the lower electrode assembly is positioned at the bottom in the reaction cavity and comprises a bearing surface, and the bearing surface is used for bearing a substrate to be processed; the mounting substrate is positioned in the first opening, and a gap is formed between the mounting substrate and the side wall of the first opening; the fixing part is positioned on the outer side of the top of the reaction cavity, surrounds the mounting substrate and is provided with a second opening; the connecting part penetrates through the second opening, a gap is reserved between the connecting part and the side wall of the second opening, the connecting part comprises a first end and a second end which are opposite, and the first end is connected with the mounting substrate; the driving device is connected with the second end and drives the mounting substrate to reciprocate along the direction vertical to the bearing surface through the connecting part; and the first corrugated pipe surrounds the connecting part and is used for maintaining the reaction cavity as a closed space.
Optionally, the number of the connecting parts is greater than 1.
Optionally, each of the connecting portions is surrounded by a first bellows.
Optionally, a plurality of the connecting portions are surrounded by the same first bellows.
Optionally, the driving device includes: the power device is positioned on the outer side of the top of the reaction cavity, and the top cover is positioned on the power device and connected with the second end of the connecting part.
Optionally, both ends of the first corrugated pipe are fixed on the top cover and the fixing part respectively.
Optionally, the driving device includes: and the hand grip is connected with the second end of the connecting part.
Optionally, the mounting substrate includes: the temperature control device comprises a bottom flat plate, extension rings extending upwards from two ends of the bottom flat plate, and a temperature control ring extending outwards from the extension rings; the first end is connected with the top of the temperature control ring.
Optionally, two ends of the first corrugated pipe are distributed and fixed on the fixing portion and the temperature control ring.
Optionally, the bottom plate comprises a first face and a second face opposite to each other, the first face facing the inside of the reaction chamber; the plasma processing apparatus further includes: a gas showerhead located at the first face; a gas distribution plate located on the second face; the gas pipeline is communicated with the gas distribution plate and used for conveying reaction gas, the fixing part further comprises a third opening, the gas pipeline penetrates through the third opening, and a gap is formed between the gas pipeline and the side wall of the third opening; and the first corrugated pipe and the second corrugated pipe are used for maintaining the reaction cavity as a closed space.
Optionally, the number of the gas pipelines is more than 1; each of the gas lines is surrounded by a second bellows.
Optionally, the number of the gas pipelines is more than 1; a plurality of said gas lines are surrounded by the same second bellows.
Optionally, the material of the mounting substrate includes an aluminum alloy; the material of the connecting part comprises: aluminum or nickel or titanium or copper; the top cover comprises an inner layer and a first anti-oxidation layer wrapped outside the inner layer; the material of the inner layer comprises: aluminum or nickel or titanium or copper; the material of the first oxidation resistant layer comprises: gold or silver; the materials of the reaction chamber top part comprise: aluminum.
Optionally, the method further includes: and the conductive band is connected between the top cover and the top of the reaction chamber.
Optionally, the conductive tape comprises a conductive layer and a second oxidation resistant layer wrapped outside the conductive layer; the material of the conductive layer comprises: aluminum or nickel or titanium or copper; the material of the second oxidation resistant layer comprises: gold or silver.
Optionally, the method further includes: and the temperature control groove is positioned in the temperature control ring and used for containing fluid, and the fluid is used for controlling the temperature of the mounting substrate.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the plasma etching apparatus provided by the technical scheme of the invention, the mounting substrate is positioned in the first opening at the top of the reaction chamber, a gap is formed between the mounting substrate and the side wall of the first opening, the connecting part penetrates through the second opening of the fixing part, a gap is formed between the connecting part and the second opening, the first end of the connecting part is connected with the mounting substrate, and the second end of the connecting part is connected with the driving device, so that the driving device can drive the mounting substrate to move along the direction vertical to the bearing surface through the connecting part, and therefore, the distance between the mounting substrate and the lower electrode assembly can be adjusted according to actual process requirements to meet different process requirements. And the first corrugated pipe surrounds the connecting part, so that the vacuum environment in the reaction cavity can be maintained in the moving process of the mounting substrate.
Further, still include: and the conductive belt is connected between the top cover and the top of the reaction cavity, so that a radio frequency loop is formed.
Drawings
FIG. 1 is a schematic structural diagram of a plasma etching apparatus according to the present invention;
FIG. 2 is a schematic structural view of another plasma etching apparatus provided by the present invention;
FIG. 3 is a schematic structural diagram of another plasma etching apparatus provided by the present invention.
Detailed Description
In order to solve the above technical problems, an embodiment of the present invention provides a plasma etching apparatus, which can linearly adjust a distance between an upper electrode assembly and a lower electrode assembly to meet the requirements of different processing processes. Specifically, a plasma etching apparatus includes: the reaction cavity is provided with a first opening at the top; the lower electrode assembly is positioned at the bottom of the reaction cavity and comprises a bearing surface, and the bearing surface is used for bearing a substrate to be processed; the mounting substrate is positioned in the first opening, and a gap is formed between the mounting substrate and the side wall of the first opening; the fixing part is positioned at the top of the reaction chamber, surrounds the mounting substrate and is provided with a second opening; the connecting part penetrates through the second opening, a gap is reserved between the connecting part and the side wall of the second opening, the connecting part comprises a first end and a second end which are opposite, and the first end is connected with the mounting substrate; the driving device is connected with the second end and drives the mounting substrate to reciprocate along the direction vertical to the bearing surface through the connecting part; and the first corrugated pipe surrounds the connecting part and is used for maintaining the reaction cavity as a closed space. The plasma etching equipment can meet different process requirements.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below.
Fig. 1 is a schematic structural diagram of a plasma etching apparatus according to the present invention.
Referring to fig. 1, the plasma etching apparatus includes a reaction chamber 200 surrounded by a reaction chamber top 200a and reaction chamber sidewalls 200b, the reaction chamber top 200a having a first opening 250; a mounting substrate 202 positioned in the first opening 250, wherein a gap is formed between the mounting substrate 202 and the top 200a of the reaction chamber on the sidewall of the first opening 250; a fixing portion 203 located at the top 200a of the reaction chamber, wherein the fixing portion 203 surrounds the mounting substrate 202, and the fixing portion 203 has a second opening 260; a connecting portion 204, wherein the connecting portion 204 extends through the second opening 260, and a gap is provided between the connecting portion 204 and a sidewall of the second opening 260, the connecting portion 204 includes a first end C and a second end D opposite to each other, and the first end C is connected to the mounting substrate 202; the driving device 210 connected to the second end D is connected to the second end D, and the driving device 210 can drive the mounting substrate 202 to move along a direction perpendicular to the carrying surface a through the connecting portion 204; a first bellows 211 surrounding the connection portion 204, wherein the first bellows 211 is used for maintaining the reaction chamber 200 as a closed space.
In this embodiment, the Plasma etching apparatus is a capacitively Coupled Plasma etching apparatus (CCP).
The reaction chamber 200 is used for performing plasma processing on a substrate to be processed.
A lower electrode assembly 201 is disposed at a downstream position in the reaction chamber 200, the lower electrode assembly 201 is located below the first opening 250, and the lower electrode assembly 201 includes a carrying surface a for carrying a substrate to be processed; the lower electrode assembly 201 includes: a susceptor 201a positioned at the bottom of the reaction chamber 200 and an electrostatic chuck 201b positioned on the surface of the susceptor 201 a. The base 201a is used for carrying an electrostatic chuck 201b, and the electrostatic chuck 201b is used for adsorbing and fixing a substrate to be processed.
The material of the mounting substrate 202 includes: an aluminum alloy material.
Further comprising: a gas shower head 209 located below the mounting substrate 202, wherein the gas shower head 209 faces the bearing surface a.
The connecting portion 204 includes a first end C and a second end D opposite to each other, the first end C is connected to the mounting substrate 202, and the second end D is connected to the driving device 210. Because the mounting substrate 202 is located in the first opening 250, and a gap is formed between the mounting substrate 202 and the reaction chamber top 200a of the sidewall of the first opening 250, the connecting portion 204 penetrates through the second opening 260 of the fixing portion 203, and a gap is formed between the connecting portion 204 and the sidewall of the second opening 260, the driving device 210 can drive the mounting substrate 202 to reciprocate along the direction perpendicular to the carrying surface a through the connecting portion 204. Since the mounting substrate 202 and the gas shower head 209 are fixed relatively, the mounting substrate 202 can drive the gas shower head 209 as the upper electrode to move along a direction perpendicular to the carrying surface a, so that the distance H between the upper electrode and the lower electrode assembly can be continuously adjusted. Therefore, the size of the distance H can be adjusted according to the actual process requirements so as to adapt to different process requirements.
Since the vacuum environment in the reaction chamber 200 is also required to be ensured when the mounting substrate 202 moves in the direction perpendicular to the carrying surface a, the first bellows 211 is disposed at the periphery of the connection portion 204.
In this embodiment, the driving device 210 includes: a power unit located outside the top 200a of the reaction chamber and a top cover 210a located on the power unit.
In other embodiments, the driving device includes: and the hand grip is connected with the second end of the connecting part.
In this embodiment, two ends of the first bellows 211 are respectively fixed to the top cover 210a and the fixing portion 203.
In the present embodiment, the number of the connection portions 204 is two. In other embodiments, the number of the connection portions 204 may be two or more.
In this embodiment, each of the first bellows 211 is surrounded by one of the first bellows 211, so that a contact area between each of the first bellows 211 and the top cover 210a is small.
In other embodiments, a plurality of the connection portions are wrapped by the same first bellows.
Because the first bellows 211 has elasticity and telescopic characteristic, will the both ends of first bellows 211 set up respectively on top cap 210a and fixed part 203, make first bellows 211 can maintain when mounting substrate 202 moves along the direction of perpendicular to loading face A be airtight space in the reaction chamber 200, be favorable to guaranteeing be vacuum environment in the reaction chamber 200, make can carry out semiconductor technology in the reaction chamber 200 and handle.
In the present embodiment, the mounting substrate 202 includes a bottom plate 202a, an extension ring 202b extending upward from two ends of the bottom plate 202a, and a temperature control ring 202c extending outward from the extension ring 202 b. The first end C of the connecting portion 204 is connected to the temperature control ring 202C. A temperature control groove (not shown) is disposed in the temperature control ring 202c, and the temperature control groove is used for accommodating a fluid, which is used for controlling the temperature of the mounting substrate 202. Since the mounting substrate 202 is in contact with the showerhead 209, it is advantageous to control the temperature of the showerhead 209.
The bottom plate 202a includes a first side and a second side opposite to each other, the first side facing the inside of the reaction chamber 200, and the plasma processing apparatus further includes: a gas showerhead 209 located at a first side, a gas distribution plate 206 located at a second side, and a gas manifold 207 connected to the gas distribution plate 206, the gas manifold 207 being configured to introduce reactant gases into the gas distribution plate 206.
The fixing portion 203 further has a third opening 270, the gas pipe 207 passes through the third opening 270, and a gap is further formed between the gas pipe 207 and the fixing portion 203 on the sidewall of the third opening 270, so that when the driving device 210 drives the mounting substrate 202 to move along the direction perpendicular to the carrying surface a through the connecting portion 204, the gas pipe 207 also moves along the direction perpendicular to the carrying surface a due to the fixed connection between the gas pipe 207 and the mounting substrate 202.
When the gas pipe 207 moves in the direction perpendicular to the carrying surface a, a vacuum environment is also required to be ensured in the reaction chamber 200, and therefore, a second bellows 213 is disposed at the periphery of the gas pipe 207. Because the second bellows 213 has the characteristics of elasticity and elasticity, two ends of the second bellows 213 are respectively and fixedly disposed on the fixing portion 203 and the gas distribution plate 206, so that the second bellows 213 can maintain the inside of the reaction chamber 200 as a closed space when the gas pipeline 207 moves in the direction perpendicular to the bearing surface a.
In this embodiment, the number of the gas pipes 207 is two for example.
In other embodiments, the number of gas lines is 1 or more than two.
In this embodiment, each gas pipeline 207 is wrapped by one second corrugated pipe 213, so that the contact area between the second corrugated pipe 213 and the fixing portion 203 is small, and the contact area between the first corrugated pipe 211 is also small, so that the driving device 210 only applies a small force, i.e., the mounting substrate 202 can move in the direction perpendicular to the carrying surface a, and the distance H between the upper electrode and the lower electrode can be adjusted according to actual needs to meet different process requirements.
The material of the connecting portion 204 includes: aluminum or nickel or titanium or copper.
Further comprising: a conductive tape 212 connected between the top cover 210a and the reaction chamber top 200 a.
The top cap 205 comprises an inner layer and a first oxidation resistant layer wrapped on the surface of the inner layer: the material of the inner layer comprises: aluminum or nickel or titanium or copper, and the material of the first oxidation resistant layer comprises gold or silver. The conductive belt 212 comprises a conductive layer and a second anti-oxidation layer wrapping the surface of the conductive layer; the material of the conductive layer comprises: copper; the material of the second oxidation resistant layer comprises: gold or silver. The top cover 210a is connected to the top 200a of the reaction chamber by a conductive strip 212, which facilitates the formation of an rf loop.
The plasma processing apparatus further includes: the vacuumizing device is used for enabling the closed space to be in a vacuum environment; a radio frequency power source applied to the base 201a for providing a plasma environment in the enclosed space.
Fig. 2 is a schematic structural diagram of another plasma etching apparatus provided by the present invention.
Referring to fig. 2, two ends of the first bellows 211 are respectively fixed to the fixing portion 203 and the mounting substrate 202.
Because the mounting substrate 202 is located in the first opening 250, and a gap is formed between the mounting substrate 202 and the reaction chamber top 200a of the sidewall of the first opening 250, the connecting portion 204 penetrates through the second opening 260 of the fixing portion 203, and a gap is formed between the connecting portion 204 and the sidewall of the second opening 260, the driving device 210 can drive the mounting substrate 202 to reciprocate along the direction perpendicular to the carrying surface a through the connecting portion 204. Since the mounting substrate 202 and the gas shower head 209 are fixed relatively, the mounting substrate 202 can drive the gas shower head 209 as the upper electrode to move along a direction perpendicular to the carrying surface a, so that the distance H between the upper electrode and the lower electrode assembly can be continuously adjusted. Therefore, the size of the distance H can be adjusted according to the actual process requirements to adapt to different process requirements. Moreover, the first bellows 211 and the second bellows 213 are advantageous for ensuring a vacuum environment in the reaction chamber 200.
In this embodiment, since each of the connection portions 204 is wrapped by one of the first bellows 211, the contact area between the first bellows 211 and the mounting substrate 202 is small; in addition, each gas pipeline 207 is respectively wrapped by one second corrugated pipe 213, so that the contact area between the second corrugated pipe 213 and the fixing portion 203 is also smaller, and the driving device 210 only needs to apply smaller force to the connecting portion 204 to move the mounting substrate 202 in the direction perpendicular to the bearing surface a, thereby being beneficial to changing the distance H between the gas shower head 209 and the lower electrode assembly 201 to meet different process requirements.
FIG. 3 is a schematic structural diagram of another plasma etching apparatus provided by the present invention.
Referring to fig. 3, a plurality of gas pipes 207 are surrounded by a second bellows 213.
Because the mounting substrate 202 is located in the first opening 250, and a gap is formed between the mounting substrate 202 and the reaction chamber top 200a of the sidewall of the first opening 250, the connecting portion 204 penetrates through the second opening 260 of the fixing portion 203, and a gap is formed between the connecting portion 204 and the sidewall of the second opening 260, the driving device 210 can drive the mounting substrate 202 to reciprocate along the direction perpendicular to the carrying surface a through the connecting portion 204. Since the mounting substrate 202 and the gas shower head 209 are fixed relatively, the mounting substrate 202 can drive the gas shower head 209 as the upper electrode to move along the direction perpendicular to the carrying surface a, so that the distance H between the upper electrode and the lower electrode assembly can be continuously adjusted. Therefore, the size of the distance H can be adjusted according to the actual process requirements to adapt to different process requirements. Moreover, the first bellows 211 and the second bellows 213 are advantageous for ensuring a vacuum environment in the reaction chamber 200.
Moreover, since each of the connection portions 204 is wrapped by one of the first corrugated pipes 211, the contact area between the first corrugated pipe 211 and the mounting substrate 202 is small; moreover, the plurality of gas pipelines 207 are wrapped by the same second corrugated pipe 213, so that the contact area between the second corrugated pipe 213 and the fixing portion 203 is small, and the driving device 210 only needs to apply a small force to the connecting portion 204 to move the mounting substrate 202 in the direction perpendicular to the bearing surface a, thereby being beneficial to changing the distance H between the gas shower head 209 and the lower electrode assembly 201 to meet different process requirements.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (16)
1. A plasma etching apparatus, comprising:
the reaction chamber comprises a reaction chamber top, and a first opening is formed in the reaction chamber top;
the lower electrode assembly is positioned at the bottom in the reaction cavity and comprises a bearing surface, and the bearing surface is used for bearing a substrate to be processed;
a mounting substrate positioned within the first opening, the mounting substrate having a gap with a sidewall of the first opening, the mounting substrate comprising: the device comprises a bottom flat plate, extension rings extending upwards from two ends of the bottom flat plate, and a temperature control ring extending outwards from the extension rings, wherein a gas spray head is arranged below a mounting substrate;
the fixing part is positioned on the outer side of the top of the reaction cavity, surrounds the mounting substrate and is provided with a second opening;
the connecting part penetrates through the second opening, a gap is formed between the connecting part and the side wall of the second opening, the connecting part comprises a first end and a second end which are opposite, and the first end is connected with the mounting substrate;
the driving device is connected with the second end and can drive the mounting substrate through the connecting part and drive the gas spray header to move in the direction vertical to the bearing surface;
and the first corrugated pipe surrounds the connecting part and is used for maintaining the reaction cavity as a closed space.
2. The plasma etching apparatus as claimed in claim 1, wherein the number of the connection portions is more than 1.
3. The plasma etching apparatus as claimed in claim 2, wherein each of the connection portions is surrounded by a first bellows.
4. The plasma etching apparatus as claimed in claim 2, wherein a plurality of the connection portions are surrounded by the same first bellows.
5. The plasma etching apparatus as claimed in claim 1, wherein the driving means comprises: the power device is positioned on the outer side of the top of the reaction cavity, and the top cover is positioned on the power device and connected with the second end of the connecting part.
6. The plasma etching apparatus as claimed in claim 5, wherein both ends of the first bellows are fixed to the top cover and the fixing portion, respectively.
7. The plasma etching apparatus as claimed in claim 1, wherein the driving means comprises: and the hand grip is connected with the second end of the connecting part.
8. The plasma etching apparatus of claim 1, wherein the first end is connected to a top of the temperature controlled ring.
9. The plasma etching apparatus of claim 8, wherein the first bellows is fixed to the fixing portion and the temperature control ring at two ends of the first bellows.
10. The plasma etching apparatus of claim 8, wherein the bottom plate includes opposing first and second faces, the first face facing an interior of the reaction chamber; the plasma processing apparatus further includes: a gas showerhead located at the first face; a gas distribution plate located on the second face; the gas pipeline is communicated with the gas distribution plate and used for inputting reaction gas into the gas distribution plate, the fixing part further comprises a third opening, the gas pipeline penetrates through the third opening, and a gap is formed between the gas pipeline and the side wall of the third opening; and the first corrugated pipe and the second corrugated pipe are used for maintaining the reaction cavity as a closed space.
11. The plasma etching apparatus of claim 10, wherein the number of gas lines is greater than 1; each of the gas lines is surrounded by a second bellows.
12. The plasma etching apparatus of claim 10, wherein the number of gas lines is greater than 1; a plurality of said gas lines are surrounded by the same second bellows.
13. The plasma etching apparatus as claimed in claim 5, wherein the material of the mounting substrate includes an aluminum alloy; the material of the connecting part comprises: aluminum or nickel or titanium or copper; the top cap includes the internal layer and wraps the first antioxidation layer outside the internal layer: the material of the inner layer comprises: aluminum or nickel or titanium or copper; the material of the first oxidation resistant layer comprises: gold or silver; the materials of the reaction chamber top comprise: aluminum.
14. The plasma etching apparatus as recited in claim 13, further comprising: and the conductive band is connected between the top cover and the top of the reaction chamber.
15. The plasma etching apparatus of claim 14, wherein the conductive strap comprises a conductive layer and a second oxidation resistant layer wrapped outside the conductive layer; the material of the conductive layer includes: aluminum or nickel or titanium or copper; the material of the second oxidation resistant layer comprises: gold or silver.
16. The plasma etching apparatus as recited in claim 8, further comprising: and the temperature control groove is positioned in the temperature control ring and used for containing fluid, and the fluid is used for controlling the temperature of the mounting substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910711497.0A CN112309807B (en) | 2019-08-02 | 2019-08-02 | Plasma etching equipment |
| TW109124235A TWI741685B (en) | 2019-08-02 | 2020-07-17 | Plasma etching equipment |
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| CN201910711497.0A CN112309807B (en) | 2019-08-02 | 2019-08-02 | Plasma etching equipment |
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| CN112309807B true CN112309807B (en) | 2022-12-30 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336355A (en) * | 1991-12-13 | 1994-08-09 | Hughes Aircraft Company | Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films |
| JP2000173981A (en) * | 1998-12-10 | 2000-06-23 | Sony Corp | Local vacuum treating apparatus |
| WO2001050498A1 (en) * | 1999-12-30 | 2001-07-12 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
| JP2005056994A (en) * | 2003-08-01 | 2005-03-03 | Saginomiya Seisakusho Inc | Plasma treatment apparatus |
| CN101047112A (en) * | 2006-03-30 | 2007-10-03 | 东京毅力科创株式会社 | Plasma processing method and plasma processing apparatus |
| JP2008112589A (en) * | 2006-10-27 | 2008-05-15 | Tokyo Electron Ltd | Plasma treatment device, plasma treatment method and memory medium |
| CN102027574A (en) * | 2008-02-08 | 2011-04-20 | 朗姆研究公司 | A protective coating for a plasma processing chamber part and a method of use |
| CN102194664A (en) * | 2010-03-11 | 2011-09-21 | 东京毅力科创株式会社 | Plasma etching method and plasma etching apparatus |
| KR20110126556A (en) * | 2010-05-17 | 2011-11-23 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4173389B2 (en) * | 2003-03-19 | 2008-10-29 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR100978754B1 (en) * | 2008-04-03 | 2010-08-30 | 주식회사 테스 | Plasma processing apparatus |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| JP2009123934A (en) * | 2007-11-15 | 2009-06-04 | Tokyo Electron Ltd | Plasma treatment apparatus |
| JP5782226B2 (en) * | 2010-03-24 | 2015-09-24 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP5567392B2 (en) * | 2010-05-25 | 2014-08-06 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5809396B2 (en) * | 2010-06-24 | 2015-11-10 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| US20140138030A1 (en) * | 2012-11-19 | 2014-05-22 | Tokyo Electron Limited | Capacitively coupled plasma equipment with uniform plasma density |
| JP7069159B2 (en) * | 2016-12-27 | 2022-05-17 | エヴァテック・アーゲー | High Frequency Capacitive Etching Reactor |
| JP6501285B2 (en) * | 2017-04-05 | 2019-04-17 | 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ | Electron beam generator and electron beam application device |
| US11355321B2 (en) * | 2017-06-22 | 2022-06-07 | Applied Materials, Inc. | Plasma reactor with electrode assembly for moving substrate |
-
2019
- 2019-08-02 CN CN201910711497.0A patent/CN112309807B/en active Active
-
2020
- 2020-07-17 TW TW109124235A patent/TWI741685B/en active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336355A (en) * | 1991-12-13 | 1994-08-09 | Hughes Aircraft Company | Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films |
| JP2000173981A (en) * | 1998-12-10 | 2000-06-23 | Sony Corp | Local vacuum treating apparatus |
| WO2001050498A1 (en) * | 1999-12-30 | 2001-07-12 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
| JP2005056994A (en) * | 2003-08-01 | 2005-03-03 | Saginomiya Seisakusho Inc | Plasma treatment apparatus |
| CN101047112A (en) * | 2006-03-30 | 2007-10-03 | 东京毅力科创株式会社 | Plasma processing method and plasma processing apparatus |
| JP2008112589A (en) * | 2006-10-27 | 2008-05-15 | Tokyo Electron Ltd | Plasma treatment device, plasma treatment method and memory medium |
| CN102027574A (en) * | 2008-02-08 | 2011-04-20 | 朗姆研究公司 | A protective coating for a plasma processing chamber part and a method of use |
| CN102194664A (en) * | 2010-03-11 | 2011-09-21 | 东京毅力科创株式会社 | Plasma etching method and plasma etching apparatus |
| KR20110126556A (en) * | 2010-05-17 | 2011-11-23 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
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| TW202107520A (en) | 2021-02-16 |
| TWI741685B (en) | 2021-10-01 |
| CN112309807A (en) | 2021-02-02 |
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