JP2008112589A - Plasma treatment device, plasma treatment method and memory medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device in which an electric resistance of a return route of high-frequency current is made small when plasma is generated between parallel flat sheet electrodes by a high-frequency power. <P>SOLUTION: On an upper electrode 3 as an anode electrode movable up and down, there are provided conductive moving-side contacting members 5a, 5b with rise-and-fall rods 51a, 51b in between outside a treatment container 2. When the above upper electrode 3 is positioned where a plasma treatment is carried out, there are provided conductive fixed-side contacting members 71 to 73 so that a return route of a high-frequency current can be formed after contacting with the moving-side contacting members 5a, 5b with conductive supporting members 61 to 63 in between outside the treatment container 2. Since a high-frequency current flows in a route of a lower electrode 4 → plasma → upper electrode 3→ rise-and-fall rods 51a, 51b→ moving-side contacting member 5a, 5b → fixed-side contacting member 71 to 73→ supporting members 61 to 63→ treatment container 2→ through the ground side of high-frequency power source 44, an electric resistance of the return route can be made small. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a parallel plate type plasma processing apparatus for processing a substrate with plasma, a plasma processing method performed using the plasma processing apparatus, and a storage medium.

  In the manufacturing process of an FPD (Flat Panel Display) substrate such as a semiconductor device or a liquid crystal display device, there is a step of performing a predetermined process such as an etching process or a film forming process on a substrate such as a semiconductor wafer or a glass substrate. This process is performed by a plasma processing apparatus such as a plasma etching apparatus or a plasma CVD apparatus. An example of this plasma processing apparatus will be briefly described with reference to FIG. 14, taking a parallel plate type plasma processing apparatus as an example.

  In this apparatus, an upper electrode 12 that also serves as a gas shower head serving as a gas supply unit is provided in a processing container 11 made of, for example, aluminum, and the mounting table of the substrate 10 is opposed to the upper electrode 12. The lower electrode 13 is also connected to a high frequency power source 15 via a matching box 14 having a matching circuit (matching circuit). Reference numeral 16 denotes an insulating material. Then, the processing gas is supplied from the upper electrode 12 into the processing container 11, and the processing container 11 is evacuated through the exhaust path 17, while the high frequency power is applied to the lower electrode 13 from the high frequency power supply 15, thereby A plasma of a processing gas is formed in a space between the lower electrode 13 and the lower electrode 13, so that the plasma processing is performed on the substrate 10 placed on the lower electrode 13.

  By the way, in the plasma processing apparatus, the optimum value of the distance (distance) between the upper electrode 12 and the lower electrode 13 differs depending on the type of processing gas and the film to be processed. It may be so narrow that 10 cannot be carried in. Further, when different processing processes are continuously performed in the same plasma processing apparatus, it is preferable to switch the interval for each processing.

  For this reason, the above-described plasma processing apparatus has, for example, an elevating shaft 18a attached to the ceiling portion of the upper electrode 12, and the upper electrode 12 is configured to be movable up and down, and between the upper electrode 12 and the lower electrode 13. The distance is variable. In the figure, 18b is a support plate, 18c is an elevating mechanism, and 19 is a bellows body provided so as to surround the elevating shaft 18a. At this time, the elevating shaft 18a, the support plate 18b, and the bellows body 19 are formed of a conductive member. Thus, the upper electrode 12 is disposed in the processing container through a conductive path including the elevating shaft 18a, the support plate 18b, and the bellows body 19. 11 is electrically connected. The processing container 11 is electrically connected to the ground side of the high frequency power supply 15.

  In such an apparatus, when plasma is generated, the high-frequency current from the high-frequency power source 15 is transmitted through the wall of the lower electrode 13 → plasma → upper electrode 12 → conducting path → processing vessel 11 as shown in FIG. And flows to the ground side of the high-frequency power supply 15. Therefore, the bellows body 19 is included in the return path of the high frequency current and acts as a resistance component.

  By the way, the glass substrate for flat panels, such as a liquid crystal display, among the board | substrates 10 which are process objects tends to enlarge increasingly, and when the process container 11 becomes large in connection with this, it is for supporting the upper electrode 12. There is a tendency that the lifting shaft 18a is thickened or the lifting shaft 18a becomes longer. When the elevating shaft 18a becomes thicker, the bellows body 19 surrounding the periphery becomes larger, and when the elevating shaft 18a becomes longer, the bellows 19 body becomes longer accordingly. Therefore, when the bellows body 19 is enlarged or lengthened, the electrical resistance of the high-frequency current return path increases.

Here, when the substrate area is as large as about 2.0 m ² , the electrical resistance of the bellows body 19 is not a problem, but when the substrate area becomes as large as about 2.7 m ² , Becomes bigger and becomes a problem. That is, when the electrical resistance of the return path increases, it becomes difficult to generate uniform plasma, and it becomes impossible to perform processing with high in-plane uniformity on the substrate 10, which causes a reduction in the performance of the apparatus. Because it ends up.

  On the other hand, Japanese Patent Application Laid-Open No. 2004-228561 describes a technique that can change the interval between the upper electrode 12 and the lower electrode 13 without including the bellows body 19 in the return path of the high-frequency current. In this technique, in the chamber 1 that generates plasma between the upper lid 1a of the chamber 1 and the insulated lower electrode 13 that constitutes the wafer mounting table 2 configured to be movable up and down, the side wall portion of the chamber 1 The metal bellows 24 is not included in the return path of the high-frequency current by conducting between the upper end portion of the conductor tube 22 connected to the wafer mounting table 2.

  However, in the configuration of Patent Document 1, since the upper end portion of the conductor tube 22 and the side wall portion of the chamber 1 are connected and the contact point of the conduction portion exists in the chamber 1, the contact point is used when performing plasma processing. Will be exposed to plasma. For this reason, the contact is easily corroded by the contact with plasma or the processing gas activated by the plasma, and as a result, the electrical contact at the contact is deteriorated. As described above, when the degree of electrical contact is deteriorated, the plasma distribution in the chamber 1 becomes non-uniform, and there is a possibility that stable plasma treatment cannot be performed.

  Further, the upper end portion of the conductor tube 22 and the side wall portion of the chamber 1 are configured to be brought into contact with and separated from each other when the contact body 26 is moved up and down via the wafer mounting table 2. If the contact of the part is configured to be movable, the contact part tends to cause generation of particles as the frequency of use increases. In addition, since the contact point of the conduction portion exists in the chamber 1, particles are generated in the chamber 1, and there is a possibility of causing particle contamination of the substrate. Thus, even with the configuration of Patent Document 1, the problem of the present invention cannot be solved.

JP 2001-203189 A

  The present invention has been made under such circumstances, and the object of the present invention is to change the interval between the parallel plate electrodes when generating plasma with high frequency power between the parallel plate electrodes, An object of the present invention is to provide a technique for generating uniform plasma by reducing the electric resistance of the return path of the high-frequency current so that the apparatus can move stably.

For this reason, the plasma processing apparatus of the present invention has at least a pair of parallel plate electrodes and at least one drive electrode that can be driven so as to change the distance between the pair of electrodes inside the processing container. In the plasma processing apparatus for returning the high frequency current from the power source to the ground side of the high frequency power source through the processing vessel, and processing the substrate with plasma,
A drive member having one end electrically connected to the drive electrode, or an insulated drive member;
Drive means for driving the drive member;
At least one processing container external contact mechanism,
The processing container external contact mechanism is
A conductive moving contact member electrically connected to the other end of the drive member protruding outside the processing container;
It is provided so as to come into contact with the moving side contact member when the moving side contact member moves, and comprises a conductive fixed side contact member connected to the outer wall of the processing container,
A high-frequency current return path is formed when the moving-side contact member and the fixed-side contact member come into contact with each other.

  Here, the contact point between the moving side contact member and the stationary side contact member of the processing container outside contact mechanism may have a position corresponding to at least one electrode interval. Further, the contact point between the moving contact member and the stationary contact member of the processing container outside contact mechanism may be configured to be changeable to a position corresponding to an arbitrary electrode interval. The driving electrode may be an electrode facing a mounting table on which a substrate is mounted, and the driving electrode may be a mounting table on which a substrate is mounted.

  Further, the drive electrode may be an anode electrode, and the anode electrode and the drive member may be electrically connected. The drive electrode is an anode electrode, and the anode electrode and the drive member are electrically connected. It may include at least one contact mechanism outside the processing vessel that is electrically insulated and has a contact point connected from the anode electrode via an impedance adjusting unit.

  The drive electrode is a cathode electrode, and the cathode electrode and the drive member may be electrically insulated, or a matching circuit is disposed between the cathode electrode and the high frequency power source. A high-frequency return current via the contact between the stationary contact member and the moving contact member of the processing container outside contact mechanism and the moving contact member may be returned to the circuit housing.

The plasma processing method of the present invention further includes at least a pair of parallel plate electrodes and at least one drive electrode that can be driven so as to change a distance between the pair of electrodes inside the processing container, and a high-frequency power source In the plasma processing method in which the high-frequency current is returned to the ground side of the high-frequency power source through the processing container, and the substrate is processed by plasma,
The drive electrode is driven by a drive member whose one end is electrically connected to the drive electrode, or an insulated drive member, and drive means for driving the drive member, and after widening the gap between the electrodes, Carrying into the processing vessel;
Driving the drive electrode to a position where the moving contact member electrically connected to the other end of the drive member contacts the fixed contact member connected to the outer wall of the processing container, and subjecting the substrate to plasma processing;
And driving the drive electrode again to widen the gap between the electrodes, and then carrying out the substrate to the outside of the processing container.

Furthermore, the storage medium of the present invention is a storage medium that stores a computer program that is used in a plasma processing apparatus that performs processing on a substrate with plasma and that operates on a computer.
The computer program is characterized in that steps are implemented so as to implement the plasma processing method.

  According to the present invention, in a plasma processing apparatus capable of generating plasma with high-frequency power between parallel plate electrodes in a processing vessel and changing the interval between the parallel plate electrodes, By making it flow to the ground side of the high frequency power supply through the processing container, it is possible to flow a high frequency current without including a member having a large electric resistance. Therefore, power efficiency is improved and stable plasma can be generated.

Hereinafter, an embodiment of the plasma processing apparatus of the present invention will be described by taking as an example a case where it is applied to an apparatus for etching a glass substrate for a flat panel. In FIG. 1, reference numeral 2 denotes a rectangular tube-shaped processing container made of aluminum having an anodized surface. The flat panel glass substrate 10 is a square substrate having a substrate area of about 2.7 m ² , for example. An upper electrode 3 that also serves as a gas shower head, which is a gas supply unit, is provided on the upper portion of the processing container 2.

  In this example, the upper electrode 3 corresponds to an anode electrode, and is connected to the processing gas supply unit 31 via the gas supply path 32, and the gas supplied from the gas supply path 32 is made into a number of gas holes 33. To the inside of the processing container 2. Since the upper electrode 3 is provided so as to be movable up and down as will be described later, the gas supply path 32 is also connected to the processing container 2 and the gas supply path 32 by an elevator mechanism (not shown) in accordance with the elevation of the upper electrode 3. It can be moved up and down while being hermetically sealed by the bellows body 32a.

  On the other hand, a lower electrode 4 serving also as a mounting table on which the substrate 10 is mounted is provided at the bottom of the processing container 2 so as to face the upper electrode 3. The lower electrode 4 is supported, for example, by a support portion 41 made of an insulating material, and thus is insulated from the processing container 2. The lower electrode 4 is connected to the high-frequency power supply unit 44 via the power supply rod 42 and the matching box 43, and functions as a cathode electrode. The matching box 43 includes a matching circuit inside a conductive casing, and the casing is formed at the bottom of the processing container 2 and has an opening for penetrating the power supply rod 42. 46 is provided so as to surround 46. The matching box 43 and the high frequency power supply unit 44 are connected by a coaxial cable 45. More specifically, the inner conductor of the coaxial cable 45 is connected to the matching circuit of the matching box 43 and the power feeding unit of the high frequency power supply unit 44, and the outer conductor of the coaxial cable 45 is the conductivity of the casing of the matching box 43 and the high frequency power supply unit 44. Connected to the chassis. In this way, the outer conductor of the coaxial cable 45 is grounded via the casing of the high frequency power supply unit 44, and thus the high frequency current is supplied from the high frequency power supply unit 44 to the cathode electrode (lower electrode 4), plasma space, and anode electrode (upper electrode 3). And it is configured to return to the ground side of the high frequency power supply 44 through the processing container 2.

  Further, a plurality of lifting pins 47 used when transferring the substrate 10 between the conveying means (not shown) and the lower electrode 4 are provided inside the lower electrode 4. A lifting mechanism (not shown) is configured so that the lifting pin 47 and the processing container 2 can be lifted and lowered in a state of being hermetically sealed by the bellows body 47a. Further, a vacuum exhaust means 22 is connected to the side wall of the processing container 2 through an exhaust path 21, and a gate valve 24 for opening and closing the transfer port 23 of the substrate 10 is provided.

  The upper electrode 3 is a conductive lifting rod 51a that forms a plurality of drive members provided so as to penetrate the ceiling portion of the processing container 2 through a through hole 25 formed in the ceiling portion of the processing container 2. 51b is supported in a state of being suspended from the ceiling portion of the processing container 2, and the upper electrode 3 and the lifting rods 51a, 51b are electrically connected to each other. Conductive moving-side contact members 5a and 5b are connected to the other ends of the elevating bars 51a and 51b, respectively, outside the ceiling of the processing container 2. The moving side contact members 5a and 5b and the lifting rods 51a and 51b are formed of, for example, aluminum or stainless steel, and the moving side contact members 5a and 5b are provided near the center as shown in FIGS. The first movable contact member 5a having a square planar shape and an annular plate provided around the first movable contact member 5a so as to surround the movable contact member 5a with a space in between. It is comprised with the 2nd movement side contact member 5b which consists of a shape member.

  The first and second moving contact members 5a and 5b are connected to the upper surface of the upper electrode 3 so that the height positions with respect to the upper electrode 3 are the same by elevating bars 51a and 51b. In this example, the common second moving contact member 5b is connected to the two lifting rods 51b, and the moving contact members 5b provided on each lifting rod 51b are electrically connected to each other. Will be. Further, a common elevating plate 53 is connected to the upper surfaces of the first and second moving contact members 5a, 5b via connecting members 52a, 52b, respectively, and the elevating plate 53 is moved up and down by the elevating means 54. The upper electrode 3 is provided to be movable up and down with respect to the lower electrode 4 via the moving contact members 5a and 5b and the lifting rods 51a and 51b. Although only three lift bars 51a and 51b are illustrated for convenience of illustration, the number of the lift bars 51a and 51b is appropriately selected according to the size of the processing container 2. In this example, the elevating means 54, the elevating plate 53, and the connecting members 52a and 52b constitute driving means, and the upper electrode 3 corresponds to the driving electrode.

  On the other hand, a conductive fixed-side contact member is provided outside the ceiling of the processing container 2. In this example, the fixed-side contact member includes conductive support members 61 to 63 connected to the processing container 2 and conductive fixed-side contact portions 71 to 73 connected to the support members 61 to 63. ing. The support members 61 to 63 and the fixed-side contact portions 71 to 73 are formed of a conductive member such as aluminum or stainless steel. In this example, the support members 61 to 63 are erected on the upper surface of the processing container 2 so as to surround the periphery of the moving contact members 5a and 5b. That is, as shown in FIGS. 1 and 2, the first support member 61 is erected so as to surround the peripheral region of the first moving contact member 5a in the circumferential direction, and the inner side of the second moving contact member 5b. A second support member 62 is erected so as to surround the region in the circumferential direction, and a third support member 63 is erected so as to surround the peripheral region of the second moving side contact member 5b in the circumferential direction.

  The first to third support members 61 to 63 provided in this way are provided so that the height positions of the upper ends from the upper surface of the processing container 2 are aligned with each other, for example, as shown in FIGS. The first support member 61 includes an annular first fixed-side contact portion 71 (71A, 71B) that surrounds the peripheral area of the first moving-side contact member 5a in the circumferential direction, and the second support member. 62, an annular second fixed-side contact portion 72 (72A) that surrounds the inner region of the second moving-side contact member 5b in the circumferential direction so as to surround the first fixed-side contact portion 71 at an interval. 72B), the third support member 63 surrounds the peripheral area of the second moving-side contact member 5b in the circumferential direction so as to surround the second fixed-side contact portion 72 at an interval. The third fixed side contact portions 73 (73A, 73B) are connected to each other.

  Further, the first to third fixed side contact portions 71 to 73 are respectively a first height fixed side contact portion 7A (71A to 73A), a second height fixed side contact portion 7B (71B to 73B), It has. These have the same planar shape, and are connected to the first to third support members 61 to 63 in the vertical direction. That is, the first to third first height fixing side contact portions 71A to 73A are respectively attached to the upper positions of the first to third support members 61 to 63, for example, the upper surfaces thereof, and the first to third support members 61A to 73A are attached to the first to third support members 61 to 63, respectively. First to third second fixed height side contact portions 71B to 73B are attached to lower positions lower than the upper positions of the third support members 61 to 63, respectively. The first height fixing side contact portions 71A to 73A and the second height fixing side contact portions 71B to 73B are provided so as to be freely attachable, for example, by being screwed to the support members 61 to 63, for example. In this example, as shown in FIGS. 1 to 3, the first fixed-side contact portion 71A and the second fixed-side contact portion 72A are integrally formed.

  Among the fixed-side contact portions 71 to 73, the inner first fixed-side contact portion 71 is at a height position between the first height-fixed-side contact portion 71A and the second height-fixed-side contact portion 71B. When the first moving contact member 5a is positioned and the moving contact member 5a is raised, the inner region of the lower surface of the first fixed height contact portion 71A is on the upper surface of the moving contact member 5a. When the moving side contact member 5a comes into contact with the peripheral region over the entire circumferential direction, the inner region of the upper surface of the second height fixing side contact portion 71B is the peripheral edge of the lower surface of the moving side contact member 5a. It is provided in contact with the entire region in the circumferential direction.

  The second fixed side contact portion 72 in the middle is located at a height position between the second first fixed height side contact portion 72A and the second fixed second height side contact portion 72B. When the movable contact member 5b is positioned and the movable contact member 5b is raised, the peripheral area of the lower surface of the first height fixing side contact portion 72A is the inner region of the upper surface of the movable contact member 5b. When the moving contact member 5b is brought into contact in the entire circumferential direction and the moving side contact member 5b is lowered, the peripheral area of the upper surface of the second fixed height side contact portion 72B is circumferential with the inner area of the lower surface of the moving side contact member 5b. It is provided so that it may contact over the whole direction.

  Further, the outer third fixed side contact portion 73 is located at a height position between the third first height fixed side contact portion 73A and the third second height fixed side contact portion 73B. When the moving contact member 5b is located and the moving contact member 5b is raised, the inner region of the lower surface of the first height fixing side contact portion 73A is the peripheral region of the upper surface of the moving contact member 5b. When the moving side contact member 5b comes down in contact with the entire circumferential direction, the inner region of the upper surface of the second height fixing side contact portion 73B is circumferential with the peripheral region of the lower surface of the moving side contact member 5b. It is provided so that it may contact over the whole direction. In this way, the movement side contact members 5a and 5b and the fixed side contact member constitute a processing container outside contact mechanism that forms a high-frequency current return path when they come into contact with each other, as will be described later.

  Further, on the contact surfaces of the moving side contact members 5a, 5b and the fixed side contact portions 71 to 73, for example, lower members, that is, the moving side contact members 5a, 5b and the first height fixed side contact portion 71A. Is between the moving contact members 5a and 5b, and between the moving contact members 5a and 5b and the second fixed height contact portions 71B to 73B is the second fixed height side. A shield spiral 55 for electrically connecting the moving side contact members 5a and 5b and the fixed side contact portions 71A to 73A and 71B to 73B is provided on the contact portions 71B to 73B side. The shield spiral 55 is a conductive member made of an elastic body in which a metal strip is formed in a coil shape.

  One end side of the through-holes 25 of the lifting rods 51a and 51b in the ceiling portion of the processing container 2 is connected to the upper surface of the processing container 2, and the other end side is connected to the lower surfaces of the moving contact members 5a and 5b. The bellows body 26 surrounds the periphery of the lifting rods 51a and 51b, inside the region surrounded by the first support member 61, in the region surrounded by the second support member 62 and the third support member 63. It is provided corresponding to the through-hole 25 provided on the inside. The bellows body 26 corresponds to a sealing unit that hermetically seals between the processing container 2 and the lifting rods 51a and 51b in a state where the lifting rods 51a and 51b can be lifted and lowered. In FIG. 2, the bellows body 26 is omitted for convenience of illustration.

  Here, as described above, the upper electrode 3 is configured to be movable up and down, and the moving side contact members 5a and 5b are moved up and down together with the upper electrode 3, but the upper electrode 3 is raised and the moving side contact members 5a and 5b are The height position of the upper electrode 3 when making contact with the first height-fixed-side contact portions 71A to 73A is a first height position, and in this example is a height position for transferring the substrate 10, This is the height position at which plasma processing is performed on the substrate 10 under the first processing condition. The height position of the upper electrode 3 when the upper electrode 3 is lowered from the first height position and the movable contact members 5a and 5b are in contact with the second fixed height contact portions 71B to 73B is the second height position. In this example, the first processing condition is a height position at which the plasma processing is performed on the substrate 10 under the second processing condition in which the position of the upper electrode 3 is different.

  Thus, when the upper electrode 3 rises to the first height position, the lifting rod 51a, the moving contact member 5a, the first height fixing contact portion 71A, and the support member 61 form a high-frequency current return path. The lift bar 51b, the moving contact member 5b, the first fixed height contact portions 72A and 73A, and the support members 62 and 63 form a high-frequency current return path for the processing vessel 2. On the other hand, when the upper electrode 3 is lowered to the second height position, the lift bar 51a, the moving contact member 5a, the second fixed height contact portion 71B, and the support member 61 form a high-frequency current return path. In addition, the lift bar 51b, the moving contact member 5b, the second fixed height contact portions 72B and 73B, and the support members 62 and 63 form a high-frequency current return path.

  The plasma processing apparatus includes control means (not shown). This control means is provided with a program storage unit composed of, for example, a computer, and the program storage unit performs operations of a plasma processing apparatus as described later, that is, processing of the wafer W, control of delivery of the wafer W, and the like. In this way, for example, a program composed of software is stored. When the program is read by the control means, the control means outputs a command to, for example, the elevating means 54, the processing gas supply unit 31, the vacuum evacuation means 22, the high frequency power supply unit 44, etc. Control the action. The program is stored in a state where it is stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.

  The effect of such an embodiment will be described. First, as shown in FIG. 4A, the upper electrode 3 is raised to a first height position (substrate delivery position). Then, the gate valve 24 is opened, the substrate 10 is carried into the processing container 2 from a load lock chamber (not shown) by a transfer arm (not shown), and the substrate 10 is moved to the lower electrode by a cooperative operation with the lift pins 47 penetrating the lower electrode 4. Pass on top of 4. Next, as shown in FIG. 4B, the gate valve 24 is closed, and the upper electrode 3 is lowered to the second height position (substrate processing position). Then, the processing gas is supplied from the processing gas supply unit 31 into the processing container 2 through the upper electrode 3, and the inside of the processing container 2 is maintained at a predetermined pressure by being evacuated by the vacuum exhaust means 22. On the other hand, by applying high frequency power from the high frequency power supply 44 to the lower electrode 4, the processing gas is excited to generate plasma, and thus the processing gas is turned into plasma, whereby a predetermined etching process is performed on the substrate 10. After the etching process, the upper electrode 3 is raised to the first height position, the gate valve 24 is opened, and the substrate 10 is carried out of the processing container 2 by a transfer arm (not shown).

  In such a plasma processing apparatus, the upper electrode 3 is configured to be movable up and down, and when the substrate 10 is carried in, the upper electrode 3 is positioned at the first height position, and between the upper electrode 3 and the lower electrode 4. When the plasma processing is performed on the substrate 10 by increasing the interval, the upper electrode 3 is lowered from the first height position to the second height position to perform a predetermined processing. Accordingly, even when the optimum value of the distance (distance) between the upper electrode 3 and the lower electrode 4 at the time of the etching process is so narrow that the substrate 10 cannot be loaded, when the substrate 10 is loaded, the upper electrode 3 is loaded. By expanding the space between the upper electrode 3 and the lower electrode 4 and then lowering the upper electrode 3 to the processing position to narrow the interval, processing can be performed at an appropriate interval.

  At this time, when the upper electrode 3 is at the second height position, the movable contact members 5a and 5b are in contact with the second fixed height contact portions 71B to 73B outside the ceiling portion of the processing container 2. . For this reason, when plasma is generated in the processing vessel 2, as indicated by arrows in FIG. 5A, most of the high-frequency current is reduced from the lower electrode (cathode electrode) 4 → plasma → upper electrode ( Anode) 3 → lifting rods 51a, 51b → moving side contact members 5a, 5b → second height fixed side contact portions 71B to 73B → support members 61 to 63 → wall portion of processing vessel 2 → matching box 43 → coaxial cable It flows through the route of the outer conductor 44 → the housing of the high-frequency power source 44 → the ground. At this time, the moving contact members 5a and 5b are connected to the upper part of the processing container 2 through the bellows body 26. However, since the bellows body 26 has a bellows structure, the second height fixing side having a flat plate structure is used. The inductance component is structurally larger than that of the contact portions 71B to 73B. For this reason, when the bellows body 26 and the second fixed height side contact portions 71B to 73B are compared, the high frequency current tends to flow toward the second fixed height side contact portions 71B to 73B, which are members having a small inductance component. For this reason, most of the high-frequency current flows from the moving side contact members 5a and 5b to the processing container 2 through the second fixed height side contact portions 71B to 73B and the support members 61 to 63.

As described above, in the above-described plasma processing apparatus, since the high-frequency current flows through the member having an inductance component smaller than that of the bellows body 26 in the return path of the high-frequency current, compared with the case where the return path includes the bellows body. The electrical resistance of the return path can be considerably reduced. For this reason, as described above, when processing a glass substrate for a flat panel having a large substrate area of 2.7 m ² , the bellows body 26 is enlarged or its length is long. However, since the high-frequency current flowing through the bellows body 26 is extremely small, an increase in the electrical resistance of the return path can be suppressed. As a result, since the power efficiency is improved, the generation of non-uniform plasma caused by an increase in the electrical resistance of the return path can be suppressed, and uniform and stable plasma can be generated. An etching process with high internal uniformity can be performed. Further, since the generation of non-uniform plasma in the processing container 2 is suppressed, uneven damage and wear of the inner wall and internal parts of the processing container 2 are suppressed, and it can be expected that the performance of the apparatus is prevented from deteriorating.

  Moreover, in the above-mentioned apparatus, since the 1st fixed height side contact parts 71A-73A and the 2nd fixed height side contact parts 71B-73B are attached to the supporting members 61-63 up and down mutually, the same plasma processing Even when different processing processes are continuously performed in the apparatus, even when the optimum value of the distance between the upper electrode 3 and the lower electrode 4 is different, the upper electrode 3 has a first height on the upper side. The first processing performed at a wide first interval between the upper electrode 3 and the lower electrode 4, and the upper electrode 3 is lowered to the second height position on the lower side, The interval can be switched for each process by a simple operation of raising and lowering the upper electrode 3 between the second process performed at a narrow second interval. For this reason, in each process, the process can be performed by smoothly switching between the upper electrode 3 and the lower electrode 4 at an appropriate interval, so that in-plane uniformity is achieved for each process while suppressing a decrease in throughput. Etching treatment with high performance can be performed.

  At this time, even when the upper electrode 3 is located at the first height position on the upper side, outside the ceiling portion of the processing container 2, the moving side contact members 5 a and 5 b are the first height fixed side contact portions. 71A-73A is contacted. For this reason, when plasma is generated in the processing container 2, as shown in FIG. 5B, most of the high-frequency current is generated from the lower electrode (cathode electrode) 4 → the plasma → the upper electrode (anode electrode) 3. → lifting rods 51a and 51b → moving side contact members 5a and 5b → first height fixed side contact portions 71A to 73A → support members 61 to 63 → wall portion of processing container 2 → matching box 43 → outer conductor of coaxial cable 45 Since the electric current flows through the housing of the high frequency power supply unit 44 and the ground, the electric resistance of the return route of the high frequency current is reduced even in this case.

  Furthermore, since the fixed side contact parts 71 to 73 are provided so as to be freely attached to the support members 61 to 63, the heights of the first height fixed side contact parts 71A to 73A and the second height fixed side contact parts 71B to 73B. The position can be adjusted by a simple operation of changing the member. For this reason, even if the space | interval between the upper electrode 3 and the lower electrode 4 changes according to the process conditions of an etching process, the fixed side contact parts 71-73 can be changed corresponding to the height position of the upper electrode 3. FIG. The adjustment work is easy. At this time, the support members 61 to 63 are attached to the processing container 2 by screwing or the like so that they can be freely attached. The support members 61 to 63 are provided with the first height fixing side contact portions 71A to 73A and the second height. Several members attached so that the height positions of the fixed contact portions 71B to 73B are different may be prepared, and these members may be replaced according to processing.

  Moreover, in this invention, the movement side contact members 5a and 5b and the fixed side contact parts 71-73 are connected in the exterior of the process container 2, and the contact of a conduction | electrical_connection part is provided in the exterior of the process container 2. FIG. Therefore, even if the frequency of use increases at the contact point of the conductive portion configured to be movable and particles are generated, there is no possibility that the particles are mixed into the processing container 2. Furthermore, since the contact of the conduction part is provided outside the processing container 2, the contact is not exposed to the plasma when performing the plasma treatment. For this reason, since the contact is corroded by contact with plasma or a corrosive processing gas as in the case where the contact is exposed to plasma, there is no possibility that the electrical contact at the contact is deteriorated. Plasma treatment can be continued.

  Next, a second embodiment of the plasma processing apparatus of the present invention will be described with reference to FIG. The difference between this example and the first embodiment is the structure of the stationary contact member and the sealing means. More specifically, the upper electrode 3 serving as the anode electrode forms a plurality of, for example, three conductive driving members provided so as to penetrate through the through holes 25 formed in the ceiling portion of the processing vessel 2. The lift bar 81 is supported in a state of being suspended from the upper side of the processing container 2, and the upper electrode 3 and the lift bar 81 are electrically connected to each other. An electrically conductive plate-like moving contact member 82 having a circular planar shape is connected to the outer end of the lifting / lowering bar 81 on the upper side outside the ceiling of the processing container 2. A common elevating plate 84 is connected to the upper surfaces of the plurality of moving side contact members 82 via a connecting member 83, and the elevating plate 84 is moved up and down by an elevating means 85, thereby moving the moving side contact member 82 and the elevating rod. The upper electrode 3 is moved up and down via 81. Also in this example, the raising / lowering means 85, the raising / lowering plate 84, and the connection member 83 constitute a driving means, and the upper electrode 3 corresponds to the driving electrode.

  On the other hand, for example, a cylindrical conductive fixed-side contact member 86 is erected on the ceiling portion of the processing container 2 so as to surround the lifting rod 81 provided so as to protrude from the processing container 2. When the plasma processing is performed on the substrate 10 at a height position (processing position of the substrate 10), the lower surface of the moving contact member 82 comes into contact with the entire upper end of the fixed contact member 86 to return a high frequency current. It forms so that a path | route may be formed and the opening part 86a formed inside the stationary-side contact member 86 may be covered. Thus, the moving-side contact member 82 and the fixed-side contact member 86 constitute a processing container outside contact mechanism.

  The contact surface between the stationary contact member 86 and the movable contact member 82 is electrically connected between the movable contact member 82 and the stationary contact member 86, for example, on the stationary contact member 86 side. A shield spiral 87 is provided. Further, in the through hole 25 in the ceiling portion of the processing container 2, a sealing means for hermetically sealing the space between the processing container 2 and the lifting / lowering bar 81 in a state where the lifting / lowering bar 81 can be moved up and down around the lifting / lowering bar 81. A magnetic seal member 88 using a magnetic fluid is provided. Other configurations are the same as those of the first embodiment described above, and the same parts are denoted by the same reference numerals. Also in this example, the lower electrode 4 corresponds to a cathode electrode, and the upper electrode 3 corresponds to an anode electrode.

  In such an embodiment, first, as shown in FIG. 7A, the upper electrode 3 is positioned at a substrate delivery position where the moving contact member 82 is positioned above the fixed contact member 86. Then, as described above, the substrate 10 is carried into the processing container 2 and transferred onto the lower electrode 4. Next, as shown in FIG. 7B, the upper electrode 3 is lowered to the processing position, the lower surface of the moving contact member 82 is brought into contact with the upper end of the fixed contact member 86, and a predetermined etching process is performed at this position. I do. After the etching process, the upper electrode 3 is raised to the delivery position, the gate valve 24 is opened, and the substrate 10 is carried out of the processing container 2 by a transfer arm (not shown).

  Also in such a plasma processing apparatus, when the upper electrode 3 is configured to be movable up and down and the substrate 10 is transferred to the processing container 2, the upper electrode 3 is positioned on the upper side, and the upper electrode 3 and the lower electrode 4 When the etching process is performed on the substrate 10 with the gap between the upper electrode 3 and the lower electrode 4 being lowered, the upper electrode 3 is lowered to the processing position to perform a predetermined process. The etching process can be performed on the substrate 10 with the interval (distance) set to an optimum interval.

  At this time, when the upper electrode 3 is at the processing position, the movable contact member 82 contacts the fixed contact member 86 outside the ceiling of the processing container 2. For this reason, when plasma is generated in the processing chamber 2, the high-frequency current is generated from the lower electrode (cathode electrode) 4 → plasma → upper electrode (anode electrode) 3 → lifting rod 81 → moving side contact member 82 → fixed side. It flows through the contact member 86 → the wall of the processing container 2 → the casing of the matching box 43 → the outer conductor of the coaxial cable 45 → the casing of the high-frequency power source 44 → the ground return path. Further, since the degree of vacuum of the processing container 2 is maintained using the magnetic seal member 88 instead of the bellows body, the return path of the high-frequency current does not include the bellows body having a large electric resistance, and the return path electrical The resistance can be further reduced. For this reason, even when processing the glass substrate 10 for flat panels with a large substrate size, uniform plasma can be generated and etching processing with high in-plane uniformity can be performed on the substrate 10. At the same time, uneven damage and wear of the inner wall and internal parts of the processing container 2 can be suppressed, and deterioration of the performance of the apparatus can be prevented. Also in this example, since the contact of the conduction part is provided outside the processing container 2, as described above, even if particles are generated at the contact of the conduction part, the particles are not inside the processing container 2. There is no fear of mixing, and there is no possibility of deteriorating electrical contact at the contact as in the case where the contact is exposed to plasma.

  Next, a third embodiment of the plasma processing apparatus of the present invention will be described with reference to FIG. This example is different from the above-described first embodiment in that it is configured such that high frequency power is applied to the upper electrode 3 to form a cathode electrode, and the lower electrode 4 side that forms the anode electrode can be moved up and down. In this example, the lower electrode 4 corresponds to a drive electrode. Specifically, the upper electrode 3 is supported by, for example, a support portion 30 made of an insulating material, and is thus electrically insulated from the processing container 2. The upper electrode 3 is connected to a high-frequency power source 37 through a power supply rod 34, a matching box 35 having a matching circuit, and a coaxial cable 36. The matching box 35 is formed on the ceiling of the processing vessel 2. The power supply rod 34 is provided outside the ceiling portion of the processing container 2 so as to close the opening 27 for penetrating the power supply rod 34.

  The inner conductor of the coaxial cable 36 is connected to the matching circuit of the matching box 35 and the power feeding unit of the high frequency power supply unit 37, and the outer conductor of the coaxial cable 36 is the conductive casing of the matching box 35 and the high frequency power supply unit 37. Are respectively connected to the conductive casings. In this way, the outer conductor of the coaxial cable 36 is grounded via the casing of the high frequency power supply unit 37, and thus the high frequency current is supplied from the high frequency power supply unit 37 to the cathode electrode (upper electrode 3), plasma space, and anode electrode (lower electrode 4). And it is configured to return to the ground side of the high-frequency power source 37 through the processing container 2.

  On the other hand, the lower electrode 4 is supported in a state of floating from the bottom of the processing container 2 by conductive lifting bars 51 a and 51 b provided so as to penetrate the bottom of the processing container 2. Conductive moving contact members 5a and 5b are connected to the outer end of the lifting / lowering rod 51 outside the processing container 2, and a fixed contact member is provided outside the bottom of the processing container 2. ing. As in the first embodiment, the fixed-side contact member of this example includes conductive support members 61 to 63 and conductive fixed-side contact portions 71 to 73 connected thereto, When the electrode 4 is set at a height position for plasma processing (processing position of the substrate 10), outside the bottom of the processing container 2, the fixed-side contact portions 71 to 73 and the moving-side contact members 5a and 5b. Are in contact with each other to form a high-frequency current return path.

  In this example, the lifting rods 51a and 51b, the moving contact members 5a and 5b, the support members 61 to 63, and the fixed contact members 71 to 73 are the same as the configuration of the first embodiment described above. Is configured in the same manner as that inverted so that is positioned on the lower side. That is, in FIG. 8, 5a and 5b are first and second moving contact members, 51a and 51b are first and second lifting rods, 52a and 52b are connecting members, 53 is a lifting plate, and 54 is lifting and lowering. Means 61 to 63 are first to third support members, 71A to 73A are first to third first height fixed side contact portions, and 71B to 73B are first to third second heights, respectively. The fixed side contact portion, 26 is a bellows body, and 55 is a shield spiral, which are configured in the same manner as in the first embodiment. Other configurations are the same as those in the first embodiment.

  In this example, the lower electrode 4 is configured to be movable up and down by the lifting / lowering means 54 via the moving contact members 5a and 5b and the lifting rods 51a and 51b, the lower electrode 4 is lowered, and the moving contact members 5a and 5b are The height position of the lower electrode 4 when contacting the first height-fixed-side contact portions 71A to 73A is the first height position, and in this example, is the height position where the substrate 10 is transferred. The height position at which the plasma processing is performed on the substrate 10 under the first processing condition. The height position of the upper electrode 3 when the lower electrode 4 rises from the first height position and the moving side contact members 5a and 5b come into contact with the second height fixed side contact portions 71B to 73B is the second height position. This is a height position, and in this example, is a height position at which plasma processing is performed on the substrate 10 under a second processing condition in which the position of the upper electrode 3 is different from the first processing condition.

  Thus, when the lower electrode 4 is positioned at the first height position, the supporting member 61, the first height fixing side contact portion 71A, and the moving side contact member 5a, and the supporting members 62, 63 and the first height fixing A high-frequency current return path is formed by the side contact portions 72A, 73A and the moving side contact member 5b. When the upper electrode 3 is positioned at the second height position, the support member 61, the second height fixing side contact portion 71B, and the moving side contact member 5a, and the support members 62, 63 and the second height fixing are provided. A high-frequency current return path is formed by the side contact portions 72B and 73B and the moving side contact member 5b.

  In such an embodiment, the lower electrode 4 is first lowered to the first height position, the substrate 10 is carried into the processing container 2 and transferred onto the lower electrode 4, and then the lower electrode 4 is moved to the second height. A predetermined etching process is performed by raising the position to the height position. After the plasma processing, the substrate 10 is lowered to the first height position and is carried out of the processing chamber 2 by a transfer arm (not shown).

  Also in such a plasma processing apparatus, the lower electrode 4 is configured to be movable up and down, and when the substrate 10 is carried in and out, the lower electrode 4 is positioned on the lower side to widen the gap between the upper electrode 3 and the lower electrode. When the etching process is performed on the substrate 10, the lower electrode 4 is raised to the processing position and a predetermined process is performed, so that the interval (distance) between the upper electrode 3 and the lower electrode 4 is optimal. The etching process can be performed in a state with a small interval.

  At this time, when the lower electrode 4 is at the second height position, the moving side contact members 51a and 51b are in contact with the second fixed height side contact portions 71B to 73B outside the bottom of the processing container 2. A return path for high-frequency current is formed. For this reason, when plasma is generated in the processing vessel 2, the high-frequency current is generated from the upper electrode (cathode electrode) 3 → plasma → lower electrode (anode electrode) 4 → lifting rods 51a, 51b → moving side contact member 5a, 5b → second height fixed side contact portions 71B to 73B → support members 61 to 63 → wall portion of processing container 2 → casing of matching box 35 → outer conductor of coaxial cable 36 → housing of high frequency power supply portion 37 → ground Flows in the return path. Therefore, the same effect as that of the first embodiment described above, that is, the effect that the electric resistance of the return path of the high-frequency current can be reduced and uniform plasma can be generated, and the first fixed height side contact Since the parts 71A to 73A and the second height-fixed-side contact parts 71B to 73B are respectively attached to the support members 61 to 63 in two stages in the vertical direction, different processing processes are continuously performed in the same plasma processing apparatus. Even if it exists, in each process, the effect that each process can be performed by smoothly switching between the upper electrode 3 and the lower electrode 4 at an appropriate interval, and the fixed-side contact parts 71 to 73 are support members. Since it is provided to be freely attachable to 61 to 63, the height positions of the first fixed height side contact portions 71A to 73A and the second fixed height side contact portions 71B to 73B can be easily adjusted. Cormorants effect, since the contact of the conductive portion is provided outside the processing container 2, particle contamination and to the processing chamber 2 inside, the effect is obtained that suppress the deterioration of the electrical contact at the contact.

  Next, a fourth embodiment of the plasma processing apparatus of the present invention will be described with reference to FIG. This example is different from the above-described first embodiment in that the cathode electrode side is provided so as to be movable up and down, a moving contact member is provided on the cathode electrode side, and the cathode electrode is plasma-treated outside the processing vessel. The fixed-side contact member is provided so as to form a high-frequency current return path in contact with the moving-side contact member when the height position is set.

  Specifically, a base member 30 is provided above the upper electrode 3 serving as a cathode electrode via an insulating member 30a. The base member 30 forms a ground, and the insulating member 30a is provided, for example, on the peripheral edge of the surface of the upper electrode 3 over the entire circumference, and the base member 30 is connected to the upper surface of the upper electrode 3 on the upper part. By providing so as to face each other, the base member 30 is provided between the upper electrode 3 and a predetermined space.

  The upper electrode 3 is suspended from the processing container 2 by the lifting rods 38 and 51b that form a plurality of driving members whose outer ends protrude outside the processing container 2 through the base member 30. The container 2 is supported in an electrically insulated state. Here, the elevating rod 38 is configured to have a hollow inside, for example, and a power feeding rod 34 is provided therein, and one end side of the power feeding rod 34 is connected to the upper surface of the upper electrode 3 and the other end. The side is connected to a high-frequency power source 37 through a matching box 35 and a coaxial cable 36. The elevating bar 38 is electrically insulated from the power supply bar 34, and one end sides of the elevating bar 38 and the remaining elevating bar 51 b are connected to the upper surface of the base member 30. Thus, the upper electrode 3 is provided so as to be electrically insulated from the lift bars 38 and 51b.

  A portion of the lifting / lowering rod 38 that protrudes outside the processing container 2 is provided to be electrically insulated from the upper electrode 3 and electrically connected to the ground side of the high-frequency power source 37. 1st moving side contact member 5a of nature is provided. In this example, the moving contact member 5a is electrically connected to the ground side of the high frequency power supply unit 37 via the housing of the matching box 35, the outer conductor of the coaxial cable 36, and the housing of the high frequency power supply unit 37. Will be. Similarly to the first embodiment described above, conductive second moving contact members 5b are also provided at portions of the lifting / lowering rod 51b that protrude outside the processing container 2, respectively.

  In addition, when the upper electrode 3 is set to a height position for performing plasma processing, a return path for high-frequency current is formed outside the ceiling of the processing container 2 in contact with the moving contact members 5a and 5b. Thus, the conductive fixed side contact member is provided, and in this example, the fixed side contact member is the support members 60 and 63 and the fixed side contact portions 71A to 73A, as in the first embodiment. 71B to 73B. Here, the first fixed-side contact portions 71A, 71B and the second fixed-side contact portions 72A, 72B are integrally formed, and the fixed-side contact portions 71A, 71B, 72A, 72B are a common one. It is attached to the support member 60. Thus, in this example, when the moving contact members 5a and 5b and the fixed contact portions 71B to 73B (71A to 73A) come into contact, the first moving contact member 5a and the second moving contact member 5b. Are electrically connected to each other.

  Furthermore, a bellows body 26 is provided between the lower surface of the first moving contact member 5a and the ceiling of the upper electrode 3 so as to surround the power supply rod 34. O-rings 39a and 39b, which form seal members, are provided on the contact surface between the first and second contact members 5a and the contact surface between the lift bar 38 and the first moving-side contact member 5a. On the other hand, a conductive rod 40 is provided between the lower surface of the lower electrode 4 and the bottom of the processing container 2, and thus the lower electrode 4 is electrically connected to the processing container 2.

  In the above, the elevating rod 38 is provided, the insulator 30a and the base body 30 are provided, the matching box 35 is provided on the upper side of the first moving side contact member 5a, The configuration other than the use of the common support member 60 and the provision of the conductive rod 40 is the same as in the first embodiment described above. Further, in this example, the upper electrode 3 corresponds to a drive electrode, and the drive means is constituted by the connecting members 52a and 52b, the elevating plate 53, and the elevating means 54, and processing is performed by the moving side contact members 5a and 5b and the fixed side contact member. An out-container contact mechanism is configured.

  In such a configuration, the upper electrode 3 has the first height position where the moving side contact members 5a and 5b are in contact with the first height fixed side contact portions 71A to 73A, and the moving side contact members 5a and 5b are the first. Even when the upper electrode 3 is located at any one of these height positions, the height fixing side contact portions 71B to 73B are provided so as to be movable up and down freely. When the moving contact members 5a, 5b and the fixed contact portions 71B to 73B (71A to 73A) come into contact, the first moving contact member 5a and the second moving contact member 5b are electrically connected to each other. To be connected to.

  Therefore, the high-frequency current when plasma is generated in the processing container 2 when the upper electrode 3 is at the first height position or the second height position is shown in FIG. Cathode electrode) 3 → Plasma → Lower electrode (Anode electrode) 4 → Upon the wall of the processing vessel 2, the support member 63 → the fixed contact portion 73A (73B) → the moving contact member 5b → the fixed contact portion 72A (72B) ) → fixed side contact portion 71A (71B) → moving via the moving side contact member 5a or from the wall of the processing container 2 via the support member 60 → fixed side contact portion 71A (71B) → moving side contact member 5a The flow then reaches the side contact member 5a, and then flows in the path of the housing of the matching box 35 → the outer conductor of the coaxial cable 36 → the housing of the high-frequency power source 37 → the ground. For this reason, since a member having a large electric resistance is not included in the return path of the high-frequency current, the electric resistance of the return path is reduced, and the same effect as in the first embodiment described above can be obtained.

  Here, in this example, since the high-frequency current flows to the ground side through the housing of the matching box 35, the moving-side contact member 5a provided with the matching box 35, the corresponding fixed-side contact portion 71, and the support If the member 60 is brought into contact, a high-frequency current return path can be formed. However, as the size of the substrate 10 is increased, the size of the apparatus is increased. For example, a phenomenon in which the electric potential is different between the central portion and the peripheral portion of the ceiling portion of the processing container 2 occurs. For this reason, in order to further reduce the potential difference between the central portion and the peripheral portion of the ceiling portion of the processing container 2, the moving-side contact members 5 a and 5 b are provided on the plurality of elevating bars 38 and 51 b, respectively. Need to be connected to reduce the impedance of the return path.

  At this time, in the above-described example, the first fixed-side contact portion 71A (71B) and the second fixed-side contact portion 72A (72B) are provided so as to be partially connected to each other, thereby moving the moving-side contact. You may comprise so that the movement side contact members 5a and 5b may mutually be electrically connected when the members 5a and 5b and the fixed side contact parts 71B-73B (71A-73A) contact.

  In the present invention, the substrate 10 is transferred to the processing container 2 when the upper electrode 3 or the lower electrode 4 is at the first height position. However, the transfer of the substrate 10 is performed by the upper electrode 3. Alternatively, it may be performed when the lower electrode 4 is between the first height position and the second height position.

  Further, also in the second embodiment described above, the upper electrode 3 is used as a cathode electrode, the lower electrode 4 is used as an anode electrode, the lower electrode 4 side is used as a drive electrode, and the moving side contact is made outside the bottom of the processing vessel 2. The member 82 and the fixed-side contact member 86 may be configured to contact each other. In the fourth embodiment, the lower electrode 4 is used as the cathode electrode, the upper electrode 3 is used as the anode electrode, and the lower electrode 4 is used. The movable side contact members 5a and 5b and the fixed side contact portions 71 to 73 may be brought into contact with each other on the outside of the bottom of the processing container 2 as the drive electrode.

  In the first embodiment, the third embodiment, and the fourth embodiment described above, the stationary contact member may be changed to the stationary contact member of the second embodiment. In either embodiment, either a magnetic seal member or a bellows body can be used as the sealing means.

Further, in the present invention, as shown in FIG. 11 representatively of the lifting rod 51a having the configuration of FIG. 1, as the moving side contact member, for example, a plate-like conductive first height moving side contact member 91 and a second one. Height moving side contact members 92 are provided on the conductive lifting / lowering rods 51a so as to be different in height from each other, and the conductive fixed side contact members 93 are provided in different positions. The first height moving side contact member 91 and the second height moving side contact when the elevating bar 51a moves up and down between the first height moving side contact member 91 and the second height moving side contact member 92. You may make it provide so that it may contact to the member 92, respectively.
The fixed-side contact member 93 is configured by, for example, a member that extends vertically upward from the processing container 2 and bends toward the center of the processing container 2.

  In this example, for example, as shown in FIG. 11A, the position of the upper electrode 3 when the upper surface of the first height moving contact member 91 is in contact with the lower surface of the fixed contact member 93 is the first position. For example, as shown in FIG. 10B, the lower surface of the second height moving side contact portion 92 is placed on the upper surface of the fixed side contact member 93. The position of the upper electrode 3 at the time of contact is the second height position, for example, the processing position of the substrate 10.

  Furthermore, in the present invention, both the cathode electrode and the anode electrode are moved up and down to form a drive electrode, and the moving side contact member and the fixed side contact member are brought into contact with each other both outside the ceiling and bottom of the processing container 2; You may comprise so that the return path | route of a high frequency current may be formed. In this case, the connection method between the moving contact member and the fixed contact member may be performed by any one of the first to fourth embodiments, and the outside of the ceiling and bottom of the processing container 2 In each of the above, the connection method of the moving side contact member and the fixed side contact member may be different.

  Furthermore, the shape of the moving side contact member and the fixed side contact member is such that when the anode electrode or the cathode electrode is positioned at a height position where the plasma processing is performed on the substrate, the moving side contact member and the fixed side contact member are outside the processing container 2. As long as the contact member and the fixed contact member are in contact with each other, the configuration is not limited to the above example, and for example, the first moving contact member 5a and the fixed contact member that contacts the first moving contact member 5a may be included. Alternatively, it may be configured to include only an annular second contact member 5b on the moving side and a fixed contact member that contacts the second mover contact member 5b. Further, the number of annular moving side contact members can be appropriately selected according to the size of the processing container 2.

  As described above, in the present invention, in order to form the return path for the high-frequency current, it is sufficient that one moving-side contact member and the corresponding fixed-side contact member are brought into contact with each other. It is necessary to form the fixed side contact portions 71 to 73 so as to surround the moving side contact members 5a and 5b as in the form, and to bring the fixed side contact portions 71 to 73 into contact with the entire periphery of the moving side contact members 5a and 5b. However, as in the first embodiment and the third embodiment described above, the moving-side contact members 5a and 5b are provided on the plurality of lifting rods 51a and 51b, respectively, and the anode electrode is subjected to plasma processing. By adopting a configuration in which the movable side contact members 5a and 5b are surrounded by the fixed side contact portions 71 to 73, respectively, the size of one side is 2.0 m or more when set to the vertical position. Large processing container 2 Oite also, since it is possible to reduce the impedance of the return path of the high frequency current, it is possible to further reduce the potential difference between the central portion and the peripheral portion of the ceiling portion of the processing chamber 2.

  Furthermore, in the present invention, as shown in FIG. 12 by taking the first moving side contact member 5a as an example, a position where the moving side contact member 5a contacts the outer surface of the ceiling portion of the conductive processing container 2, The bellows body 28 is provided between the upper electrode 3 and the inner surface of the ceiling of the processing container 2 so as to close the opening 25 and is provided so as to be movable up and down between the position contacting the stationary contact member 93. May be. For example, the fixed-side contact member 93 is configured to extend vertically from the outer surface of the ceiling of the processing container 2 toward the upper side and bend toward the center of the processing container 2. In this case, the position where the moving contact member 5a contacts the fixed contact member 93 is the first height position, and the position where the moving contact member 5a contacts the outer surface of the ceiling of the processing container 2 is the second height position. Done. In the figure, reference numeral 55 denotes a shield spiral, and the other configuration is the same as the configuration of FIG.

  Even in such a configuration, the high-frequency current when plasma is generated in the processing container 2 is lower electrode 4 (cathode electrode) → plasma → upper when the upper electrode 3 is at the first height position. Electrode 3 (anode electrode) → lifting rod 51a → moving side contact member 5a → fixed side contact member 93 → wall of processing vessel 2 → housing of matching box 43 → outer conductor of coaxial cable 45 → housing of high frequency power supply unit 44 When the upper electrode 3 is in the second height position, the lower electrode 4 (cathode electrode) → plasma → the upper electrode 3 (anode electrode) → the lifting bar 51a → the moving contact member 5a → the wall of the processing container 2 → the housing of the matching box 43 → the outer conductor of the coaxial cable 45 → the housing of the high-frequency power source 44 → the return path of the ground.

  Furthermore, in the present invention, as shown in FIG. 13, when the anode electrode is a drive electrode, an impedance adjustment unit may be connected to the anode electrode. In the example shown in FIG. 13, the upper electrode 3 is an anode electrode, and the base member 30 is provided on the upper electrode 3 via an insulator 30 a as in the example shown in FIG. 9. The upper electrode 3 is suspended from the processing container 2 by the lifting rods 38 and 51b that form a plurality of driving members whose outer ends protrude outside the processing container 2 through the base member 30. The processing vessel 2 is electrically insulated and supported. Here, the elevating rod 38 is configured to have a hollow inside, for example, and a conductive rod 34 is provided therein, and one end side of the conductive rod 34 is connected to the upper surface of the upper electrode 3, and the other end. The side is connected to the impedance adjustment unit 94. The elevating bar 38 is electrically insulated from the conductive bar 34, and one end sides of the elevating bar 38 and the remaining elevating bar 51 b are connected to the upper surface of the base member 30.

  A conductive first moving contact member 5a is provided at a portion of the lifting / lowering bar 38 protruding outside the processing container 2 so as to be insulated from the upper electrode 3. Similarly to the first embodiment described above, conductive second moving contact members 5b are also provided at portions of the lifting / lowering rod 51b that protrude outside the processing container 2, respectively. In the figure, 39a and 39b are O-rings, and 55 is a shield spiral.

  In this example, the fixed-side contact member includes support members 60 and 63 and fixed-side contact portions 71A to 73A and 71B to 73B as in the fourth embodiment. Here, the first fixed-side contact portions 71A, 71B and the second fixed-side contact portions 72A, 72B are integrally formed, and the fixed-side contact portions 71A, 71B, 72A, 72B are a common one. It is attached to the support member 60. Thus, when the moving contact members 5a, 5b and the fixed contact portions 71B to 73B (71A to 73A) are in contact, the first moving contact member 5a and the second moving contact member 5b are electrically connected to each other. Connected.

  In the above, the elevating bar 38 is provided, the insulator 30a and the base body 30 are provided, and the impedance adjusting mechanism 94 is provided on the upper side of the first moving side contact member 5a. The configuration other than using the common support member 60 is the same as that of the first embodiment described above. Further, in this example, the upper electrode 3 corresponds to a drive electrode, and the drive means is constituted by the connecting members 52a and 52b, the elevating plate 53, and the elevating means 54, and processing is performed by the moving side contact members 5a and 5b and the fixed side contact member. An out-container contact mechanism is configured.

  In such a configuration, when a high-frequency current flows through a normal path, the lower electrode 4 → the plasma → the upper electrode 3 → the impedance adjusting portion 94 → the moving contact member 5a → the fixed contact portions 71A and 71B → the support member. 60 → wall of processing vessel 2 → casing of matching box 43 → outer conductor of coaxial cable 45 → housing of high frequency power supply unit 44 → lower electrode 4 → plasma → processing vessel 2 → High frequency current may flow in an abnormal path that reaches the ground via the matching box 43, so the impedance of the path (return path) from the upper electrode 3 to the lower part of the processing vessel 2 is set as an impedance adjustment unit. 94 for adjustment.

  That is, the capacitance (C1) of the plasma and the inductance (L) of the path from the upper electrode 3 to the lower part of the processing container 2 are canceled by the capacitance component (C) of the impedance adjusting unit 94, thereby making the impedance of the path j (−1 / ωC1 + ωL−1 / ωC) is set to be smaller than the impedance of the abnormal path. For this reason, the impedance adjustment unit 94 includes a capacitance component. As its form, for example, a configuration using a variable capacitance capacitor, a combination of a fixed capacitance capacitor and a variable capacitance capacitor, a configuration using a fixed capacitance capacitor, a variable capacitance capacitor Various configurations can be employed, such as a configuration combining an inductor and an inductor, a configuration using an inductor capable of varying inductance, and a fixed capacitor. Even when only a fixed capacitor is used, the impedance value can be adjusted by replacing the capacitor with a different capacitor.

  With this configuration, the high-frequency current flows through the normal path as described above due to the generation of plasma. At this time, the impedance value of the path is set to be almost the minimum value, and the abnormal Since it is smaller than the impedance value of the path, it is difficult for plasma to stand between the lower electrode 4 and the wall of the processing vessel 2. As a result, plasma concentrates between the lower electrode 4 and the upper electrode 3, and the plasma on the substrate 10 has high in-plane uniformity.

  When the moving contact members 5a and 5b and the fixed contact portions 71B to 73B (71A to 73A) come into contact with each other, the first moving contact member 5a and the second moving contact member 5b are electrically connected to each other. Therefore, the high-frequency current at the time of plasma generation is such that the moving contact member 5a → the fixed contact portion 72B (72A) → the moving contact member 5b → It flows to the processing container 2 through the fixed side contact portion 73B (73A) → the support member 63. For this reason, the electric potential difference between the center part and peripheral part of the ceiling part of the processing container 2 can be made small. In addition, you may make it provide the said impedance adjustment part 94 in the 2nd movement side contact member 5b.

  In the above, the plasma processing apparatus of the present invention can be applied not only to the etching process but also to other plasma processes such as ashing and CVD. In addition to the FPD substrate, the substrate may be a semiconductor wafer, and the shape of the processing container may be a cylindrical shape.

It is sectional drawing which shows the etching processing apparatus which concerns on one embodiment of this invention. It is a perspective view which shows a part of said etching processing apparatus. It is a top view which shows the said etching processing apparatus. It is sectional drawing for demonstrating the effect | action of the said etching processing apparatus. It is sectional drawing for demonstrating the effect | action of the said etching processing apparatus. It is sectional drawing which shows 2nd Embodiment of the said etching processing apparatus. It is sectional drawing for demonstrating the effect | action of the said etching processing apparatus. It is sectional drawing which shows 3rd Embodiment of the said etching processing apparatus. It is sectional drawing which shows 4th Embodiment of the said etching processing apparatus. It is sectional drawing which shows the effect | action of 4th implementation of the said etching processing apparatus. It is sectional drawing which shows the other example of the said etching processing apparatus. It is sectional drawing which shows the further another example of the said etching processing apparatus. It is sectional drawing which shows the other example of the said etching processing apparatus. It is sectional drawing which shows the conventional plasma processing apparatus. It is sectional drawing which shows the conventional plasma processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 2 Processing container 26 Bellows body 3 Upper electrode 31 Processing gas supply part 4 Lower electrode 34, 42 Feeding rods 35, 43 Matching box 37, 44 High frequency power supply part 36, 45 Coaxial cable 5, 82 Moving side contact member 38, 51 81 Lifting rod 52 Connecting member 53 Lifting plate 54 Lifting means 61-63, 86 Support members 71A-73A First height fixing side contact portions 71B-73B Second height fixing side contact portions

Claims (11)

The processing container has at least a pair of parallel plate electrodes and at least one drive electrode that can be driven so as to change a distance between the pair of electrodes, and a high-frequency current is supplied from a high-frequency power source through the processing container. In the plasma processing apparatus for returning to the ground side of the high-frequency power source and processing the substrate with plasma,
A drive member having one end electrically connected to the drive electrode, or an insulated drive member;
Drive means for driving the drive member;
At least one processing container external contact mechanism,
The processing container external contact mechanism is
A conductive moving contact member electrically connected to the other end of the drive member protruding outside the processing container;
It is provided so as to come into contact with the moving side contact member when the moving side contact member moves, and comprises a conductive fixed side contact member connected to the outer wall of the processing container,
A plasma processing apparatus, wherein a high-frequency current return path is formed when the moving contact member and the fixed contact member come into contact with each other.   The plasma processing apparatus according to claim 1, wherein a contact point between the moving side contact member and the fixed side contact member of the processing container outside contact mechanism has a position corresponding to at least one electrode interval.   3. The plasma processing apparatus according to claim 1, wherein the contact point between the moving side contact member and the fixed side contact member of the processing container outside contact mechanism can be changed to a position corresponding to an arbitrary electrode interval.   The plasma processing apparatus according to claim 1, wherein the drive electrode is an electrode facing a mounting table on which a substrate is mounted.   The plasma processing apparatus according to claim 1, wherein the drive electrode is a mounting table on which a substrate is mounted.   6. The plasma processing apparatus according to claim 1, wherein the drive electrode is an anode electrode, and the anode electrode and the drive member are electrically connected.   The drive electrode is an anode electrode, and the anode electrode and the drive member are electrically insulated, and have at least one contact mechanism outside the processing vessel having a contact point connected from the anode electrode via an impedance adjusting unit. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is included.   6. The plasma processing apparatus according to claim 1, wherein the drive electrode is a cathode electrode, and the cathode electrode and the drive member are electrically insulated.   A matching circuit is disposed between the cathode electrode and the high-frequency power source, and a contact between the stationary contact member and the moving contact member of the processing container outside contact mechanism and the moving contact member is disposed in the casing of the matching circuit. 9. The plasma processing apparatus according to claim 8, wherein the high frequency return current is fed back. The processing container has at least a pair of parallel plate electrodes and at least one drive electrode that can be driven so as to change a distance between the pair of electrodes, and a high-frequency current is supplied from a high-frequency power source through the processing container. In the plasma processing method of returning to the ground side of the high frequency power supply and processing the substrate with plasma,
The drive electrode is driven by a drive member whose one end is electrically connected to the drive electrode, or an insulated drive member, and drive means for driving the drive member, and after widening the gap between the electrodes, Carrying into the processing vessel;
Driving the drive electrode to a position where the moving contact member electrically connected to the other end of the drive member contacts the fixed contact member connected to the outer wall of the processing container, and subjecting the substrate to plasma processing;
And a step of driving the drive electrode again to widen the gap between the electrodes and then unloading the substrate to the outside of the processing container. A storage medium storing a computer program used on a plasma processing apparatus for processing a substrate with plasma and operating on a computer,
A storage medium characterized in that the computer program includes steps for carrying out the plasma processing method according to claim 10.

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