CN101662263B - Bias circuit for Ku-band matched field effect transistor - Google Patents
Bias circuit for Ku-band matched field effect transistor Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 7
- 239000003365 glass fiber Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
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Abstract
The invention discloses a bias circuit for a Ku waveband internal matching field effect transistor, which is characterized in that the bias circuit consists of a grid bias circuit of a micro-strip stub structure, the Ku waveband internal matching field effect transistor and a drain bias circuit of a double-section micro-strip stub structure, wherein the grid bias circuit of the micro-strip stub structure is connected with the grid of the Ku waveband internal matching field effect transistor, and the drain bias circuit of the double-section micro-strip stub structure is connected with the drain of the Ku waveband internal matching field effect transistor. The invention can effectively inhibit common low-frequency oscillation in the Ku-band microwave power amplifier, improve the stability of the amplifier, widen the bandwidth of the bias circuit and only introduce very low insertion loss. The invention can be used for any Ku waveband microwave power amplifier based on the internal matching field effect transistor.
Description
Technical field
The present invention relates to the microwave power amplifier technical field, relate in particular to a kind of biasing circuit to the Ku waveband internally-matched field effect transistor.
Background technology
In radar transmitter system, electronic countermeasures, intelligent missile and various communication and navigation electronic system, extensively use with the microwave power amplifier of Ku waveband internally-matched field effect transistor as active device.
Because shared pin is imported, exported to the direct current supply of most of internally-matched field effect transistors and microwave signal; Biasing circuit and microwave link influence each other, and might cause microwave power amplifier generation low-frequency oscillation, microwave signal to produce distortion through biasing circuit leakage, power amplifier gain and phase change.
For interior coupling microwave power pipe than low-frequency range; Generally direct current biasing is provided through bigger choke induction; But at Ku and with super band, discrete inductance element will be introduced a lot of parasitic parameters, and produce the discontinuous electromagnetic wave that causes to space radiation with the microstrip circuit junction.
Adopt the grow tall biasing circuit of characteristic impedance microstrip stubs of single hop quarter-wave, replaced discrete choke induction, the problems referred to above have been played certain improvement effect with microstrip line.
Yet the broadband performance of this structure is relatively poor, can introduce bigger insertion loss for the application of working frequency range broad.The present invention has proposed to comprise the grow tall novel biasing circuit of characteristic impedance microstrip stubs and fan-shaped offset of microstrip line of two section quarter-waves on this basis.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of biasing circuit to the Ku waveband internally-matched field effect transistor, to improve the stability of microwave power amplifier, improves the linearity of microwave power amplifier.
(2) technical scheme
For achieving the above object; The invention provides a kind of biasing circuit to the Ku waveband internally-matched field effect transistor; This biasing circuit is made up of the drain bias circuit of gate bias circuit, Ku waveband internally-matched field effect transistor and the two section type microstrip stubs structure of microstrip stubs structure; Wherein, The gate bias circuit of this microstrip stubs structure is connected in the grid of this Ku waveband internally-matched field effect transistor, and the drain bias circuit of this two section type microstrip stubs structure is connected in the drain electrode of this Ku waveband internally-matched field effect transistor;
Wherein, the gate bias circuit of said microstrip stubs structure comprises: first partiting dc capacitor the 1, the 1 ohm microstrip transmission line 2, first quarter-wave grow tall characteristic impedance microstrip stubs 4, the first fan-shaped offset of microstrip line 5, first resistance 6, first electric capacity 7, second electric capacity 8, the 3rd electric capacity 10 and first feedthrough capacitor 9;
Said the one 50 ohm microstrip transmission line 2 one ends are connected in the grid of this Ku waveband internally-matched field effect transistor; The other end is connected in first partiting dc capacitor 1, and the grid of this Ku waveband internally-matched field effect transistor and first partiting dc capacitor 1 are connected to the position, axis of the one 50 ohm microstrip transmission line 2;
A grow tall end of characteristic impedance microstrip stubs 4 of said first quarter-wave is connected in the end of the one 50 ohm microstrip transmission line 2 near this Ku waveband internally-matched field effect transistor grid, and the other end is connected in the first fan-shaped offset of microstrip line 5 and first resistance 6;
Said first feedthrough capacitor 9 is connected in first quarter-wave characteristic impedance microstrip stubs 4 of growing tall through first resistance 6;
The drain bias circuit of said two section type microstrip stubs structure comprises: the 2 50 ohm microstrip transmission line 11, second partiting dc capacitor 13, second quarter-wave grow tall characteristic impedance microstrip stubs 12 and the 3rd quarter-wave grow tall characteristic impedance microstrip stubs 15, the second fan-shaped offset of microstrip line 14 and the 3rd fan-shaped offset of microstrip line 16, second resistance 18, the 4th electric capacity 17 and the 5th electric capacity 19 and second feedthrough capacitor 20;
Said the 2 50 ohm microstrip transmission line 11 1 ends are connected in the drain electrode of this Ku waveband internally-matched field effect transistor; The other end is connected in second partiting dc capacitor 13, and the drain electrode of this Ku waveband internally-matched field effect transistor and second partiting dc capacitor 13 are connected to the position, axis of the 2 50 ohm microstrip transmission line 11;
A grow tall end of characteristic impedance microstrip stubs 12 of said second quarter-wave is connected in the end of the 2 50 ohm microstrip transmission line 11 near this Ku waveband internally-matched field effect transistor drain electrode, and the other end is connected in the 3rd fan-shaped offset of microstrip line 16 and the 3rd quarter-wave characteristic impedance microstrip stubs 15 of growing tall;
A grow tall end of characteristic impedance microstrip stubs 15 of said the 3rd quarter-wave is connected in grow tall characteristic impedance microstrip stubs 12, the second fan-shaped offset of microstrip lines 14, second resistance 18, the 5th electric capacity 19 and second feedthrough capacitor 20 of second quarter-wave and all is connected in the grow tall other end of characteristic impedance microstrip stubs 15 of said the 3rd quarter-wave;
Said second feedthrough capacitor 20 is connected in second quarter-wave characteristic impedance microstrip stubs 12 of growing tall through grow tall characteristic impedance microstrip stubs 15 and the 3rd fan-shaped offset of microstrip line 16 of the 3rd quarter-wave successively.
In the such scheme, the gate bias voltage of the gate bias circuit of this microstrip stubs structure is introduced through first feedthrough capacitor 9 that is installed on the microwave power amplifier cavity.
In the such scheme, the drain bias voltage of the drain bias circuit of this two section type microstrip stubs structure is introduced through second feedthrough capacitor 20 that is installed on the microwave power amplifier cavity.
In the such scheme; The drain bias circuit of the gate bias circuit of this microstrip stubs structure and two section type microstrip stubs structure is printed on the same high frequency glass fiber ptfe substrate; This substrate is welded on the cavity of microwave power amplifier through conductive silver paste, and passes through screw.
(3) beneficial effect
Can find out that from such scheme the present invention has following beneficial effect:
This biasing circuit provided by the invention to the Ku waveband internally-matched field effect transistor; In practical application, can effectively eliminate the low-frequency oscillation of microwave power amplifier, in the wideband operation frequency range, absorb the even-order harmonic of microwave signal, thereby can effectively suppress common low-frequency oscillation in the Ku band microwave power amplifier; Improved the stability of microwave power amplifier; Widened the biasing circuit bandwidth, improved the linearity of microwave power amplifier, the insertion loss of introducing simultaneously is minimum.
Description of drawings
Fig. 1 is the sketch map that is directed against the biasing circuit of Ku waveband internally-matched field effect transistor provided by the invention;
Fig. 2 is the sketch map of the gate bias circuit of microstrip stubs structure provided by the invention;
Fig. 3 is the sketch map of the drain bias circuit of two section type microstrip stubs structure provided by the invention;
Fig. 4 be the insertion loss introduced of gate bias circuit of the present invention with the insertion loss ratio of the biasing circuit introducing of Traditional use choke induction than sketch map;
Fig. 5 be the insertion loss introduced of drain bias circuit of the present invention with the insertion loss ratio of the biasing circuit introducing of Traditional use choke induction than sketch map.
The main element symbol description:
1 is first partiting dc capacitor, and 2 is the one 50 ohm microstrip transmission lines, the 3rd, and the Ku waveband internally-matched field effect transistor, 4 is first quarter-wave characteristic impedance microstrip stubs of growing tall; 5 is first fan-shaped offset of microstrip lines, and 6 is first resistance, and 7 is first electric capacity, and 8 is second electric capacity; 9 is first feedthrough capacitors, and 10 is the 3rd electric capacity, and 11 is the 2 50 ohm microstrip transmission lines; 12 is second quarter-wave characteristic impedance microstrip stubs of growing tall, and 13 is second partiting dc capacitors, and 14 is second fan-shaped offset of microstrip lines; 15 is the 3rd quarter-wave characteristic impedance microstrip stubs of growing tall, and 16 is the 3rd fan-shaped offset of microstrip lines, and 17 is the 4th electric capacity; 18 is second resistance, and 19 is the 5th electric capacity, and 20 is second feedthrough capacitors.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The present invention can be applied to any microwave power amplifier based on the Ku waveband internally-matched field effect transistor, combines Fig. 1, Fig. 2 and Fig. 3 that the present invention is done detailed description at present:
As shown in Figure 1; Fig. 1 is the sketch map that is directed against the biasing circuit of Ku waveband internally-matched field effect transistor provided by the invention, and this biasing circuit is made up of the drain bias circuit of gate bias circuit, Ku waveband internally-matched field effect transistor and the two section type microstrip stubs structure of microstrip stubs structure.Wherein, the gate bias circuit of this microstrip stubs structure is connected in the grid of this Ku waveband internally-matched field effect transistor, and the drain bias circuit of this two section type microstrip stubs structure is connected in the drain electrode of this Ku waveband internally-matched field effect transistor.
As shown in Figure 2; Fig. 2 is the sketch map of the gate bias circuit of microstrip stubs structure provided by the invention, and the gate bias circuit of this microstrip stubs structure comprises: first partiting dc capacitor the 1, the 1 ohm microstrip transmission line 2, first quarter-wave grow tall characteristic impedance microstrip stubs 4, the first fan-shaped offset of microstrip line 5, first resistance 6, first electric capacity 7, second electric capacity 8, the 3rd electric capacity 10 and first feedthrough capacitor 9.The gate bias voltage of the gate bias circuit of this microstrip stubs structure is introduced through first feedthrough capacitor 9 that is installed on the microwave power amplifier cavity.
The one 50 ohm microstrip transmission line 2 one ends are connected in the grid of this Ku waveband internally-matched field effect transistor; The other end is connected in first partiting dc capacitor 1, and the grid of this Ku waveband internally-matched field effect transistor and first partiting dc capacitor 1 are connected to the position, axis of the one 50 ohm microstrip transmission line 2.
A grow tall end of characteristic impedance microstrip stubs 4 of first quarter-wave is connected in the end of the one 50 ohm microstrip transmission line 2 near this Ku waveband internally-matched field effect transistor grid, and the other end is connected in the first fan-shaped offset of microstrip line 5 and first resistance 6.
As shown in Figure 3; Fig. 3 is the sketch map of the drain bias circuit of two section type microstrip stubs structure provided by the invention, and the drain bias circuit of this two section type microstrip stubs structure comprises: the 2 50 ohm microstrip transmission line 11, second partiting dc capacitor 13, second quarter-wave grow tall characteristic impedance microstrip stubs 12 and the 3rd quarter-wave grow tall characteristic impedance microstrip stubs 15, the second fan-shaped offset of microstrip line 14 and the 3rd fan-shaped offset of microstrip line 16, second resistance 18, the 4th electric capacity 17 and the 5th electric capacity 19 and second feedthrough capacitor 20.The drain bias voltage of the drain bias circuit of this two section type microstrip stubs structure is introduced through second feedthrough capacitor 20 that is installed on the microwave power amplifier cavity.
The 2 50 ohm microstrip transmission line 11 1 ends are connected in the drain electrode of this Ku waveband internally-matched field effect transistor; The other end is connected in second partiting dc capacitor 13, and the drain electrode of this Ku waveband internally-matched field effect transistor and second partiting dc capacitor 13 are connected to the position, axis of the 2 50 ohm microstrip transmission line 11.
A grow tall end of characteristic impedance microstrip stubs 12 of second quarter-wave is connected in the end of the 2 50 ohm microstrip transmission line 11 near this Ku waveband internally-matched field effect transistor drain electrode, and the other end is connected in the 3rd fan-shaped offset of microstrip line 16 and the 3rd quarter-wave characteristic impedance microstrip stubs 15 of growing tall.
A grow tall end of characteristic impedance microstrip stubs 15 of the 3rd quarter-wave is connected in grow tall characteristic impedance microstrip stubs 12, the second fan-shaped offset of microstrip lines 14, second resistance 18, the 5th electric capacity 19 and second feedthrough capacitor 20 of second quarter-wave and all is connected in the grow tall other end of characteristic impedance microstrip stubs 15 of said the 3rd quarter-wave.
Be directed against in the biasing circuit of Ku waveband internally-matched field effect transistor provided by the invention; The drain bias circuit of the gate bias circuit of microstrip stubs structure and two section type microstrip stubs structure is printed on the same high frequency glass fiber ptfe substrate; This substrate is welded on the cavity of microwave power amplifier through conductive silver paste, and passes through screw.
The concrete design cycle of the biasing circuit to the Ku waveband internally-matched field effect transistor provided by the invention is following:
1, selects suitable Ku waveband internally-matched field effect transistor according to the index request of practical application, mainly pay close attention to parameters such as its operating frequency, working gain, power output and packing forms;
2, select the glass fiber ptfe substrate of suitable thickness, dielectric constant according to practical application, calculate the grow tall parameters such as radius, angle of characteristic impedance microstrip stubs width and length and fan-shaped offset of microstrip line of quarter-wave in 50 ohm microstrip transmission line width, the biasing circuit;
3, use the ADS Software tool that circuit microstrip line physical dimension is carried out whole simulation optimization, and carry out electromagnetic-field simulation and optimization, confirm the optimum size parameter;
4, reach the encapsulation parameter of selected FET according to the microstrip line physical dimension, use AutoCAD instrument designing printed circuit board, accomplish and make, finally realize Ku waveband internally-matched field effect transistor biasing circuit;
5, test analysis.
In practical work experience, find, adopt field-effect transistor as microwave power amplifier, the especially Ku of active device and with super band power amplifier, low-frequency oscillation takes place through regular meeting.The bias voltage and the electric current that show as field-effect transistor are unstable, produce spike in the frequency response, cause power amplifier unstable.The biasing circuit of internally-matched field effect transistor proposed by the invention; First resistance 6 and second resistance 18 of the series connection in the drain electrode parallel branch and the 4th electric capacity 17 of series connection through the grid series connection; Effectively offset the negative real number impedance of the input/output port that causes low-frequency oscillation, made the power amplifier steady operation.
In addition, owing in drain bias, adopted two section type microstrip stubs structure, biasing circuit proposed by the invention can be worked in wideer frequency band range.The Ku band microwave power amplifier that the biasing circuit that adopts the present invention to propose is developed is not found any low-frequency oscillation, and bias voltage and electric current are all very stable.In 13.5～14.0GHz working frequency range, biasing circuit has absorbed the even-order harmonic component effectively, keeps fundamental frequency signal and odd harmonic component, and the input and output standing wave is all below 1.2.Simultaneously, the not enough 0.1dB of the insertion loss of introducing.The insertion loss ratio that the insertion loss that gate bias circuit and drain bias circuit are introduced and the biasing circuit of Traditional use choke induction are introduced is like Fig. 4 and shown in Figure 5.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. biasing circuit to the Ku waveband internally-matched field effect transistor; It is characterized in that; This biasing circuit is made up of the drain bias circuit of gate bias circuit, Ku waveband internally-matched field effect transistor and the two section type microstrip stubs structure of microstrip stubs structure; Wherein, The gate bias circuit of this microstrip stubs structure is connected in the grid of this Ku waveband internally-matched field effect transistor, and the drain bias circuit of this two section type microstrip stubs structure is connected in the drain electrode of this Ku waveband internally-matched field effect transistor;
Wherein, the gate bias circuit of said microstrip stubs structure comprises: first partiting dc capacitor (1), the one 50 ohm microstrip transmission line (2), first quarter-wave grow tall characteristic impedance microstrip stubs (4), the first fan-shaped offset of microstrip line (5), first resistance (6), first electric capacity (7), second electric capacity (8), the 3rd electric capacity (10) and first feedthrough capacitor (9);
Said the one 50 ohm microstrip transmission line (2) one ends are connected in the grid of this Ku waveband internally-matched field effect transistor; The other end is connected in first partiting dc capacitor (1), and the grid of this Ku waveband internally-matched field effect transistor and first partiting dc capacitor (1) are connected to the position, axis of the one 50 ohm microstrip transmission line (2);
A grow tall end of characteristic impedance microstrip stubs (4) of said first quarter-wave is connected in the end of the one 50 ohm microstrip transmission line (2) near this Ku waveband internally-matched field effect transistor grid, and the other end is connected in the first fan-shaped offset of microstrip line (5) and first resistance (6);
Said first feedthrough capacitor (9) is connected in first quarter-wave characteristic impedance microstrip stubs (4) of growing tall through first resistance (6);
The drain bias circuit of said two section type microstrip stubs structure comprises: the 2 50 ohm microstrip transmission line (11), second partiting dc capacitor (13), second quarter-wave grow tall characteristic impedance microstrip stubs (12) and the 3rd quarter-wave grow tall characteristic impedance microstrip stubs (15), the second fan-shaped offset of microstrip line (14) and the 3rd fan-shaped offset of microstrip line (16), second resistance (18), the 4th electric capacity (17) and the 5th electric capacity (19) and second feedthrough capacitor (20);
Said the 2 50 ohm microstrip transmission line (11) one ends are connected in the drain electrode of this Ku waveband internally-matched field effect transistor; The other end is connected in second partiting dc capacitor (13), and the drain electrode of this Ku waveband internally-matched field effect transistor and second partiting dc capacitor (13) are connected to the position, axis of the 2 50 ohm microstrip transmission line (11);
A grow tall end of characteristic impedance microstrip stubs (12) of said second quarter-wave is connected in the end of the 2 50 ohm microstrip transmission line (11) near this Ku waveband internally-matched field effect transistor drain electrode, and the other end is connected in the 3rd fan-shaped offset of microstrip line (16) and the 3rd quarter-wave characteristic impedance microstrip stubs (15) of growing tall;
A grow tall end of characteristic impedance microstrip stubs (15) of said the 3rd quarter-wave is connected in second quarter-wave characteristic impedance microstrip stubs (12) of growing tall, and the second fan-shaped offset of microstrip line (14), second resistance (18), the 5th electric capacity (19) and second feedthrough capacitor (20) all are connected in the grow tall other end of characteristic impedance microstrip stubs (15) of said the 3rd quarter-wave;
Said second feedthrough capacitor (20) is connected in second quarter-wave characteristic impedance microstrip stubs (12) of growing tall through grow tall characteristic impedance microstrip stubs (15) and the 3rd fan-shaped offset of microstrip line (16) of the 3rd quarter-wave successively.
2. the biasing circuit to the Ku waveband internally-matched field effect transistor according to claim 1; It is characterized in that the gate bias voltage of the gate bias circuit of this microstrip stubs structure is introduced through first feedthrough capacitor (9) that is installed on the microwave power amplifier cavity.
3. the biasing circuit to the Ku waveband internally-matched field effect transistor according to claim 1; It is characterized in that the drain bias voltage of the drain bias circuit of this two section type microstrip stubs structure is introduced through second feedthrough capacitor (20) that is installed on the microwave power amplifier cavity.
4. the biasing circuit to the Ku waveband internally-matched field effect transistor according to claim 1; It is characterized in that; The drain bias circuit of the gate bias circuit of this microstrip stubs structure and two section type microstrip stubs structure is printed on the same high frequency glass fiber ptfe substrate; This substrate is welded on the cavity of microwave power amplifier through conductive silver paste, and passes through screw.
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| CN200810118973XA CN101662263B (en) | 2008-08-27 | 2008-08-27 | Bias circuit for Ku-band matched field effect transistor |
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| CN200810118973XA CN101662263B (en) | 2008-08-27 | 2008-08-27 | Bias circuit for Ku-band matched field effect transistor |
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| CN101662263B true CN101662263B (en) | 2012-11-21 |
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| CN101867349B (en) * | 2010-07-01 | 2012-11-21 | 华为技术有限公司 | Radio frequency power amplifier |
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| CN105510648B (en) * | 2016-01-14 | 2018-03-30 | 中国电子科技集团公司第十三研究所 | One kind is used for super high power GaN microwave device high-isolation microwave test fixtures |
| CN107769738A (en) * | 2016-08-19 | 2018-03-06 | 中兴通讯股份有限公司 | Match circuit |
| CN106603017A (en) * | 2016-11-16 | 2017-04-26 | 电子科技大学 | Harmonic inhibition power amplifier |
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| CN112910419A (en) * | 2021-01-21 | 2021-06-04 | 中电国基南方集团有限公司 | Power amplifier chip output matching circuit with out-of-band gain suppression function |
| CN113054918B (en) * | 2021-03-10 | 2022-11-22 | 深圳大学 | Power amplifier circuit and microwave transmission equipment |
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